Display panel and display device

Abstract

A display panel comprises: a substrate (1); a photoelectric sensing structure located on one side of the substrate (1); a light emitting structure located on the side of the photoelectric sensing structure away from the substrate (1), the light emitting structure comprising: a plurality of light emitting elements (3), each light emitting element (3) comprising: a first electrode (301), a light emitting layer (302) and a second electrode (303) arranged in sequence in a direction away from the substrate (1); and a light path structure (4) located between the photoelectric sensing structure and the second electrode (303) and configured to collimate light rays located on the side of the photoelectric sensing structure away from the substrate (1) and propagating in a direction towards the photoelectric sensing structure; in a direction perpendicular to the substrate (1), the photoelectric sensing structure and the light emitting structure do not overlap or partially overlap; and in a direction perpendicular to the substrate (1), the light path structure (4) and the photoelectric sensor structure at least partially overlap. A display device is also provided.

Description

Technical Field

[0001] This disclosure relates to the field of displays, and more particularly to a display panel and a display device. Background Technology

[0002] To reduce product thickness, some manufacturers have proposed a technical solution that integrates photoelectric sensors (such as PIN photodiodes) into the display panel in an in-cell manner. Specifically, light-emitting elements (such as organic light-emitting diodes) for image display and photoelectric sensors for fingerprint recognition are fabricated separately in the display panel. The photoelectric sensor receives the light reflected from the valley or ridge of the fingerprint and generates corresponding electrical signals. Since the reflection at the valley and ridge positions is different, the generated electrical signals are also different, thereby enabling the recognition of valleys and ridges.

[0003] However, in practical applications, it has been found that light reflected from adjacent valleys or ridges can enter the same photoelectric sensor, resulting in light crosstalk and ultimately causing blurred images. Summary of the Invention

[0004] This disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes a display panel and display device.

[0005] In a first aspect, embodiments of this disclosure provide a display panel, comprising:

[0006] Base;

[0007] A photoelectric sensing structure is located on one side of the substrate;

[0008] A light-emitting structure is located on the side of the photoelectric sensing structure away from the substrate. The light-emitting structure includes a plurality of light-emitting elements, each of which includes a first electrode, a light-emitting layer, and a second electrode arranged sequentially along the direction away from the substrate.

[0009] An optical path structure, located between the photoelectric sensing structure and the second electrode, is configured to collimate light rays located on the side of the photoelectric sensing structure away from the substrate and whose propagation direction is close to the photoelectric sensing structure;

[0010] In the direction perpendicular to the substrate, the photoelectric sensing structure and the light-emitting structure do not overlap or partially overlap.

[0011] In a direction perpendicular to the substrate, the optical path structure at least partially overlaps with the photoelectric sensor structure.

[0012] In some embodiments, the optical path structure has multiple light-transmitting channels;

[0013] The angle between the direction of light propagating from the light-transmitting channel and the normal to the plane on which the substrate is located is [0°, 72°].

[0014] In some embodiments, the propagation direction of light emitted from the light-transmitting channel and directed toward the photoelectric sensing structure forms an angle between the angle between the normal to the plane on which the substrate lies and the angle between ...

[0015] In some embodiments, the photoelectric sensing structure includes: a plurality of photoelectric sensors, each photoelectric sensor corresponding to at least one of the light-transmitting channels.

[0016] In some embodiments, each photoelectric sensor corresponds to n light-transmitting channels, where 1 ≤ n ≤ 10 and n is a positive integer.

[0017] In some embodiments, the optical path structure includes: at least one light-shielding layer, wherein the light-shielding layer is provided with a plurality of light-transmitting holes, the light-transmitting holes defining a light transmission channel.

[0018] In some embodiments, the at least one light-shielding layer includes: a first light-shielding layer and a second light-shielding layer located on the side of the first light-shielding layer away from the substrate, a light-transmitting layer is disposed between the first light-shielding layer and the second light-shielding layer, the first light-shielding layer is provided with first light-transmitting holes arranged in an array, the second light-shielding layer is provided with second light-transmitting holes corresponding one-to-one with the first light-transmitting holes, and the first light-transmitting holes and the corresponding second light-transmitting holes define a light transmission channel.

[0019] In some embodiments, the at least one light-shielding layer further includes: at least one third light-shielding layer located between the first light-shielding layer and the second light-shielding layer, wherein a light-transmitting layer is provided between each adjacent light-shielding layer;

[0020] The third light-shielding layer is provided with a third light-transmitting hole that corresponds to the first light-transmitting hole, and the first light-transmitting hole and the corresponding second and third light-transmitting holes define a light transmission channel.

[0021] In some embodiments, the number of the third light-shielding layers is 1.

[0022] In some embodiments, the shapes of the second light-transmitting hole and the first light-transmitting hole on the substrate are substantially the same;

[0023] The ratio of the area of ​​the first light-transmitting hole projected onto the substrate to the area of ​​the second light-transmitting hole projected onto the substrate ranges from [0.2, 1].

[0024] In some embodiments, the shapes of the orthographic projections of the third light-transmitting hole and the first light-transmitting hole on the substrate are substantially the same, and the area of ​​the orthographic projection of the third light-transmitting hole on the substrate is substantially equal to the area of ​​the orthographic projection of the first light-transmitting hole on the substrate.

[0025] In some embodiments, the orthographic projections of the first light-transmitting hole, the second light-transmitting hole corresponding to the first light-transmitting hole, and the third light-transmitting hole corresponding to the first light-transmitting hole on the substrate at least partially overlap.

[0026] In some embodiments, the orthographic projections of the first light-transmitting hole and the second light-transmitting hole corresponding to the first light-transmitting hole on the substrate completely overlap;

[0027] The first light-transmitting hole and the third light-transmitting hole corresponding to the first light-transmitting hole have at least partially overlapping projections on the substrate.

[0028] In some embodiments, the shape of the overlapping portion of the orthographic projection of the first light-transmitting hole and the third light-transmitting hole corresponding to the first light-transmitting hole on the substrate is square.

[0029] In some embodiments, the orthographic projections of the first light-transmitting hole, the second light-transmitting hole corresponding to the first light-transmitting hole, and the third light-transmitting hole corresponding to the first light-transmitting hole on the substrate are respectively a first orthographic projection, a second orthographic projection, and a third orthographic projection.

[0030] The areas of the first orthographic projection, the second orthographic projection, and the third orthographic projection are approximately equal and all are squares. Of any two intersecting sides of the square, one extends along a first direction and the other extends along a second direction.

[0031] The distance between the center of the first orthographic projection and the center of the third orthographic projection in the first direction and in the second direction are equal.

[0032] In some embodiments, the side lengths of the first orthographic projection, the second orthographic projection, and the third orthographic projection are all D, the distance between the center of the first orthographic projection and the center of the third orthographic projection in the first direction and the distance in the second direction are both T, the thickness of the optical path structure is H, and the collimation angle θ of the light-transmitting channel within the optical path structure satisfies the following relationship:

[0033] θ = arctan(DT) / H;

[0034] Where D ranges from 4µm to 10µm; T ranges from 1µm to 3µm.

[0035] The collimation angle θ ranges from [10°, 20°].

[0036] In some embodiments, the arrangement period of the first light-transmitting hole, the second light-transmitting hole, and the third light-transmitting hole is equal and is P. The thickness of the first light-shielding layer is h1, the thickness of the second light-shielding layer is h2, the thickness of the third light-shielding layer is h3, the thickness of the light-transmitting layer located between the first light-shielding layer and the third light-shielding layer is H1, and the thickness of the light-transmitting layer located between the second light-shielding layer and the third light-shielding layer is H2. D, T, H, P, h1, h2, h3, H1, and H2 satisfy the following relationship:

[0037] H / (P+D)≤(h1+h3+H1) / (D+T)≤(h2+H2) / (PT).

[0038] In some embodiments, the value of P ranges from 5µm to 20µm;

[0039] The value range of h1 is 1um to 3um;

[0040] The value range of h2 is 1um to 3um;

[0041] The value range of h3 is 1um to 3um;

[0042] The value range of H1 is 0.5um to 4um;

[0043] The value range of H2 is 0.5um to 4um.

[0044] In some embodiments, a second planarization layer is provided on the side of the photoelectric sensing structure away from the substrate, and the material of the second planarization layer includes: a light-shielding material;

[0045] The second planarization layer is reused as the first light-shielding layer.

[0046] In some embodiments, a first passivation layer is disposed between the second planarization layer and the photoelectric sensing structure.

[0047] In some embodiments, a pixel defining layer is disposed on the side of the second planarization layer away from the substrate, a pixel opening is formed on the pixel defining layer, the light-emitting layer is located within the pixel opening, the second electrode is located on the side of the pixel defining layer away from the substrate, and the material of the pixel defining layer includes: a light-shielding material;

[0048] The pixel defining layer is reused as the second light-shielding layer.

[0049] In some embodiments, a filter layer is disposed between the second electrode and the pixel defining layer, the filter layer filling a second light-transmitting hole on the pixel defining layer, and the filter layer is configured to filter out non-visible light.

[0050] In some embodiments, a filter layer is disposed between the first light-shielding layer and the second light-shielding layer, the filter layer being configured to filter out non-visible light;

[0051] The filter layer is reused as at least one of the light-transmitting layers.

[0052] In some embodiments, a filling layer is disposed between the second electrode and the pixel defining layer, and the filling layer fills the second light-transmitting hole on the pixel defining layer;

[0053] An isolation dam is provided between the filling layer and the second electrode, surrounding the opening of the pixel.

[0054] In some embodiments, an isolation dam is provided between the second electrode and the pixel defining layer, the isolation dam filling the second light-transmitting hole on the pixel defining layer and surrounding the pixel opening.

[0055] In some embodiments, the filter layer includes an infrared filter layer configured to filter out infrared light.

[0056] In some embodiments, when at least one third light-shielding layer is provided between the first light-shielding layer and the second light-shielding layer, the material of the third light-shielding layer includes: black resin material.

[0057] In some embodiments, when at least one third light-shielding layer is provided between the first light-shielding layer and the second light-shielding layer, the material of the third light-shielding layer includes: a metallic material.

[0058] In some embodiments, a second passivation layer is disposed between the third light-shielding layer and the light-transmitting layer located on the side of the third light-shielding layer closest to the substrate.

[0059] In some embodiments, the photoelectric sensing structure includes: a plurality of photoelectric sensors, each photoelectric sensor including: a third electrode, a photoelectric conversion layer, and a fourth electrode arranged sequentially along a direction away from the substrate;

[0060] The display panel further includes a driving circuit layer, which is located between the substrate and the photoelectric sensing structure. The driving circuit layer has a first transistor electrically connected to the light-emitting element and a second transistor electrically connected to the photoelectric sensor.

[0061] The drain of the first transistor is electrically connected to the first electrode in the corresponding light-emitting element, and the drain of the second transistor is electrically connected to the third electrode in the corresponding photoelectric sensor.

[0062] In some embodiments, the driving circuit layer is provided with an active layer, a first gate insulating layer, a first gate conductive layer, a second gate insulating layer, a second gate conductive layer, an interlayer dielectric layer, a first source / drain conductive layer, and a first planarization layer in sequence along the direction away from the substrate.

[0063] A second source / drain conductive layer is disposed on the side of the first planarization layer away from the substrate, and the second source / drain conductive layer includes the third electrode.

[0064] In some embodiments, a bias voltage line is provided on the side of the photoelectric sensing structure away from the substrate, the bias voltage line is electrically connected to the fourth electrode, and the bias voltage line is disposed in the same layer as the first electrode.

[0065] In some embodiments, the second electrode is provided with an encapsulation layer and a cover plate on the side away from the substrate, and the cover plate is located on the side of the encapsulation layer away from the substrate.

[0066] In some embodiments, a touch-sensitive layer is provided between the encapsulation layer and the cover plate.

[0067] In some embodiments, a circular polarizer is disposed between the encapsulation layer and the cover plate.

[0068] In some embodiments, the photoelectric sensing structure includes a plurality of photoelectric sensors, wherein the orthographic projection of the photoelectric sensors on the substrate does not overlap with the orthographic projection of the light-emitting element on the substrate;

[0069] The substrate includes a plurality of first pixel regions arranged in an array and a plurality of second pixel regions arranged in an array, wherein the first pixel regions and the second pixel regions are alternately arranged in both the row and column directions;

[0070] The light-emitting element is located within the first pixel area, and the photoelectric sensor is located within the second pixel area.

[0071] The light-emitting element is an organic light-emitting diode.

[0072] Secondly, embodiments of this disclosure also provide a display device, comprising: a display panel as described in any of the first aspects above and an outer frame for fixing the display panel. Attached Figure Description

[0073] Figure 1 A cross-sectional schematic diagram of a display panel provided in an embodiment of this disclosure;

[0074] Figure 2 This is a schematic diagram of the light reflected from adjacent valley positions in an embodiment of this disclosure;

[0075] Figure 3aThis is a schematic diagram showing the positional relationship of the light-emitting element, photoelectric sensor, and light-transmitting channel in an embodiment of this disclosure;

[0076] Figure 3b This is a schematic diagram showing another positional relationship between the light-emitting element, the photoelectric sensor, and the light-transmitting channel in an embodiment of this disclosure;

[0077] Figure 4 for Figure 1 A cross-sectional schematic diagram of the optical path structure in the display panel shown;

[0078] Figure 5 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure;

[0079] Figure 6 for Figure 5 A cross-sectional schematic diagram of the optical path structure in the display panel shown;

[0080] Figure 7 This is a cross-sectional schematic diagram of the optical path structure in an embodiment of this disclosure;

[0081] Figure 8 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure;

[0082] Figure 9 for Figure 8 A cross-sectional schematic diagram of the optical path structure in the display panel shown;

[0083] Figure 10 for Figure 9 Various schematic diagrams showing the orthographic projection of the first light-transmitting hole and its corresponding second and third light-transmitting holes onto the substrate in the quasi-connection structure shown;

[0084] Figure 11 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure;

[0085] Figure 12 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure;

[0086] Figure 13 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure;

[0087] Figure 14 This is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present disclosure. Detailed Implementation

[0088] To enable those skilled in the art to better understand the technical solutions of this disclosure, a display panel, its manufacturing method, and display device provided in this disclosure will be described in detail below with reference to the accompanying drawings.

[0089] Exemplary embodiments will be described more fully below with reference to the accompanying drawings; however, these exemplary embodiments may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will enable those skilled in the art to fully understand the scope of this disclosure. The shapes and sizes of the components in the drawings do not reflect actual proportions and are intended only to illustrate the contents of this disclosure.

[0090] The terminology used herein is for describing particular embodiments only and is not intended to limit this disclosure. As used herein, the singular forms “a” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that when the terms “comprising” and / or “made of” are used in this specification, the presence of the stated feature, integral, step, operation, element, and / or component is specified, but the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof is not excluded. Without conflict, the various embodiments of this disclosure and the features within those embodiments may be combined with each other.

[0091] Unless otherwise specified, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this disclosure, and will not be interpreted as having an idealized or overly formal meaning, unless expressly so defined herein.

[0092] Figure 1 This is a cross-sectional schematic diagram of a display panel provided in an embodiment of the present disclosure, as shown below. Figure 1 As shown, the display panel provided in this embodiment of the present disclosure is a display panel with display function and texture recognition function, and the display panel includes:

[0093] Substrate 1; specifically, the material of substrate 1 may be polyimide (PI) or glass, etc.

[0094] The photoelectric sensing structure is located on one side of the substrate 1; a detailed description of the photoelectric sensing structure can be found in the following content.

[0095] The light-emitting structure, located on the side of the photoelectric sensing structure away from the substrate 1, includes: multiple light-emitting elements 3, each of which includes: a first electrode 301, a light-emitting layer 302, and a second electrode 303 arranged sequentially along the direction away from the substrate 1.

[0096] The optical path structure 4 is located between the photoelectric sensing structure and the second electrode 303. The optical path structure 4 is configured to collimate the light rays located on the side of the photoelectric sensing structure away from the substrate and whose propagation direction is the photoelectric sensing structure.

[0097] In the direction perpendicular to the substrate, the photoelectric sensing structure and the light-emitting structure do not overlap or partially overlap; in the direction perpendicular to the substrate, the optical path structure 4 and the photoelectric sensor structure at least partially overlap.

[0098] In this embodiment of the present disclosure, by setting an optical path structure 4 between the photoelectric sensing structure and the second electrode 303, a pair of light rays incident from one side of the photoelectric sensing structure to the other side of the photoelectric sensing structure are collimated, which can effectively improve or even completely eliminate the problem of crosstalk between light rays reflected from adjacent valley / ridge positions, thereby improving the imaging clarity.

[0099] In some embodiments, the light-emitting element 3 is a top-emitting light-emitting element 3; the first electrode 301 is a reflective electrode, and its material can be a conductive material with good reflective properties, such as copper (Cu), aluminum (Al), titanium (Ti), molybdenum (Mo) and other metal materials or alloy materials; the second electrode 303 is a transparent electrode, and its material can be a conductive material with good transmission properties, such as indium tin oxide (ITO), indium zinc oxide (IZO), gallium zinc oxide (GZO) and other transparent metal oxide materials.

[0100] In some embodiments, the light-emitting element 3 is specifically an organic light-emitting diode (OLED), in which case the light-emitting layer 302 is an organic light-emitting layer 302; the first electrode 301 can serve as the anode of the organic light-emitting diode, and the second electrode 303 can serve as the cathode of the organic light-emitting diode. Organic functional films such as hole injection layers and hole transport layers can also be selectively disposed between the first electrode 301 and the light-emitting layer 302, and organic functional films such as electron injection layers and electron transport layers can also be selectively disposed between the second electrode 303 and the light-emitting layer 302.

[0101] The photoelectric sensing structure includes multiple photoelectric sensors 2, each photoelectric sensor 2 comprising a third electrode 201, a photoelectric conversion layer 202, and a fourth electrode 203 sequentially disposed along a direction away from the substrate 1. In some embodiments, the optical sensor includes a PIN photodiode and a PN photodiode, and the operating state of the optical sensor can be controlled by controlling the voltage applied to the third electrode 201 and the fourth electrode 203. The photoelectric conversion layer 202 includes a stacked P-type semiconductor layer (e.g., a P-type Si layer) 202c and an N-type semiconductor layer (e.g., an N-type Si layer) 202a, or a stacked P-type semiconductor layer 202c, an intrinsic semiconductor layer (e.g., an intrinsic Si layer) 202b, and an N-type semiconductor layer 202a. For example, the intrinsic semiconductor layer 202b is an a-Si material, the P-type semiconductor layer 202c is an a-Si material doped with B ions, and the N-type semiconductor layer 202a is an a-Si material doped with P ions.

[0102] In some embodiments, the fourth electrode 203 is a transparent electrode, which may be made of transparent metal oxide materials such as indium tin oxide, indium zinc oxide, or gallium zinc oxide. The first electrode 301 is a metal electrode, which may be made of metal materials or alloy materials such as copper, aluminum, titanium, or molybdenum.

[0103] In some embodiments, the optical path structure 4 has multiple light-transmitting channels Q, and the angle between the propagation direction of light emitted from the light-transmitting channels Q and the normal to the plane on which the substrate 1 is located is [0°, 72°]. That is, light emitted from one side of the photoelectric sensing structure to the other side of the photoelectric sensing structure can only pass through the light-transmitting channels Q on the optical path structure 4, and the light emitted from the light-transmitting channels Q is small-angle light.

[0104] In this embodiment, the light-transmitting channel Q refers to a channel through which light can pass through the optical path structure 4. The light-transmitting channel Q can collimate the light rays incident on the photoelectric sensing structure at various angles, so that the light rays emitted from the first light-transmitting channel Q are within a certain angle range. The difference between the maximum and minimum angles within this angle range is the light-receiving angle of the light-transmitting channel Q. For a detailed description of the light-transmitting channel Q, please refer to the specific examples below.

[0105] Figure 2 This is a schematic diagram of the light reflected from adjacent valley positions in an embodiment of this disclosure, as shown below. Figure 2 As shown, the light reflected from adjacent valleys does not cause crosstalk, meaning the luminous angle α at which the valleys and ridges can be distinguished satisfies: tanα = p0 / 2 * h0; where p0 is the center-to-center distance between adjacent valleys / ridges on the texture, typically ranging from 0.3 mm to 0.45 mm; and h0 is the distance between the texture and the photoelectric sensing structure, typically ranging from 0.4 mm to 0.65 mm for ultra-thin products. Taking p0 values ​​within the ranges of 0.3 mm to 0.45 mm and 0.4 mm to 0.65 mm, the value of p0 / 2 * h0 can be calculated to be between 0.23 and 0.56. Taking a p0 / 2 * h0 value of 0.25 as an example, the critical angle α ≈ 14.04° for crosstalk can be calculated. That is, light with a reflection angle greater than the critical angle α ≈ 14.04° is crosstalk light.

[0106] As can be seen from the preceding analysis, the crosstalk caused by reflected light from adjacent valleys / ridges is due to large-angle light, and the specific critical angle is related to the magnitudes of p0 and h0. In this embodiment, by setting the optical path structure 4, large-angle incident light can be effectively filtered out (some small-angle light will also be filtered out because it fails to reach the light transmission channel Q or reaches the light transmission channel Q but fails to pass through it), thereby effectively improving or even completely eliminating the problem of crosstalk caused by reflected light from adjacent valleys / ridges, thus improving image clarity.

[0107] In some embodiments, the optical path structure 4 is configured such that the angle between the propagation direction of the light emitted from the light-transmitting channel Q and the normal to the plane on which the substrate 1 is located is [0°, 20°]. This design is applicable to ultra-thin display panels and can essentially eliminate the problem of crosstalk caused by reflected light.

[0108] Figure 3a This is a schematic diagram showing the positional relationship of the light-emitting element, photoelectric sensor, and light-transmitting channel in an embodiment of this disclosure. Figure 3b This is a schematic diagram illustrating another positional relationship between the light-emitting element, the photoelectric sensor, and the light-transmitting channel in an embodiment of this disclosure, as shown below. Figure 3a and Figure 3b As shown, in some embodiments, each photoelectric sensor 2 corresponds to one or more light-transmitting channels Q, and one light-transmitting channel corresponds to one photoelectric sensor 2.

[0109] The correspondence between a light-transmitting channel Q and a photoelectric sensor 2 specifically means that when light shines from one side of the photoelectric sensing structure to the other side, the light emitted from a certain light-transmitting channel Q can only reach the photoelectric sensor 2 corresponding to that light-transmitting channel Q and cannot reach other photoelectric sensors 2. In this embodiment of the present disclosure, one light-transmitting channel Q can only correspond to one photoelectric sensor 2, and one photoelectric sensor 2 can correspond to one or more light-transmitting channels Q.

[0110] With a fixed cross-sectional area (also called "cross-section") of the light-transmitting channel Q in the plane parallel to the substrate 1, the more light-transmitting channels Q corresponding to one photoelectric sensor 2, the larger the illumination area of ​​the photoelectric sensor 2, which is more conducive to texture recognition. However, when the number of light-transmitting channels Q corresponding to one photoelectric sensor 2 reaches a certain upper limit, limited by the area occupied by one photoelectric sensor 2, as the number of light-transmitting channels Q corresponding to one photoelectric sensor 2 continues to increase, the cross-sectional area of ​​the light-transmitting channel Q in the plane parallel to the substrate 1 needs to be reduced; the smaller the cross-sectional area of ​​the light-transmitting channel Q in the plane parallel to the substrate 1, the more difficult it is to fabricate the optical path structure 4. Considering both the illumination area of ​​the photoelectric sensor 2 and the fabrication difficulty of the optical path structure 4, in this embodiment, one photoelectric sensor 2 corresponds to n light-transmitting channels Q, 1≤n≤10 and n is a positive integer.

[0111] In some embodiments, the orthographic projection of the photoelectric sensor 2 on the substrate 1 does not overlap with the orthographic projection of the light-emitting element 3 on the substrate 1.

[0112] Furthermore, the substrate 1 includes a plurality of first pixel regions arranged in an array and a plurality of second pixel regions arranged in an array, with the first pixel regions and the second pixel regions alternately arranged in both the row and column directions; the light-emitting element 3 is located in the first pixel region and the photoelectric sensor 2 is located in the second pixel region.

[0113] Furthermore, the multiple first pixel regions include: a red pixel region, a green pixel region, and a blue pixel region. The light-emitting element 3 located in the red pixel region is a red light-emitting element R that emits red light, the light-emitting element 3 located in the green pixel region is a green light-emitting element G that emits green light, and the light-emitting element 3 located in the blue pixel region is a blue light-emitting element B that emits blue light.

[0114] See also Figure 3a and Figure 3b As shown in the figure, as an example, a red light-emitting element R is provided in a red pixel area, two independent green light-emitting elements G are provided in a green pixel area arranged along the column direction, and a blue light-emitting element B is provided in a blue pixel area.

[0115] In some embodiments, the orthographic projection of the red light-emitting element R onto the substrate 1 is a convex hexagon, the orthographic projection of the blue light-emitting element B onto the substrate 1 is a hexagon, and the orthographic projection of the green light-emitting element G onto the substrate 1 is a convex pentagon. The orthographic projections of the two green light-emitting elements G located in the same green pixel area onto the substrate 1 are axially symmetrical to each other, and the axis of symmetry is parallel to the row direction.

[0116] It should be noted that, Figure 3a and Figure 3b The light-emitting element 3 shown includes a red light-emitting element R, a green light-emitting element G, and a blue light-emitting element B. The orthographic projections of the red light-emitting element R and the blue light-emitting element B onto the substrate 1 are convex hexagons, and the orthographic projection of the green light-emitting element G onto the substrate 1 is a convex pentagon. This is merely illustrative and does not limit the technical solution of this disclosure. In embodiments of this disclosure, the light-emitting element 3 can also be a light-emitting element emitting other colors of light (e.g., a yellow light-emitting element emitting yellow light, a white light-emitting element emitting white light, etc.), and the orthographic projection of the light-emitting element 3 onto the substrate 1 can also be other shapes (e.g., rectangle, circle, ellipse, etc.).

[0117] In some embodiments, the optical path structure 4 includes at least one light-shielding layer, wherein a plurality of light-transmitting holes are provided in the light-shielding layer, and the light-transmitting holes define a light transmission channel Q. The optical path structure of this disclosure will now be described in detail with reference to the accompanying drawings.

[0118] Figure 4 for Figure 1 The diagram shows a cross-sectional view of the optical path structure in the display panel, as shown below. Figure 1 and Figure 4As shown, in some embodiments, the optical path structure 4 includes a light-shielding layer 400, on which a plurality of light-transmitting holes 400a are provided, and each light-transmitting hole 400a defines one light-transmitting channel Q. Wherein, the aperture of the light-transmitting hole 400a is d, and the thickness of the light-shielding layer is H, then the light-emitting angle of the light-transmitting channel Q is [0°, arctan(d / H)], that is, the light-receiving angle θ of the light-transmitting channel Q is arctan(d / H). If the pre-set critical angle α for crosstalk is to basically eliminate the problem of crosstalk caused by reflected light, then arctan(d / H) ≤ α, that is, d / H ≤ tanα, must be satisfied.

[0119] Figure 5 This is a cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure. Figure 6 for Figure 5 The diagram shows a cross-sectional view of the optical path structure in the display panel, as shown below. Figure 5 and Figure 6 As shown, with Figure 1 The optical path structure 4 within the display panel shown is different. Figure 5 The optical path structure 4 in the display panel shown includes two light-shielding layers 401 and 402, specifically a first light-shielding layer 401 and a second light-shielding layer 402 located on the side of the first light-shielding layer 401 away from the substrate 1. A light-transmitting layer 411 is disposed between the first light-shielding layer 401 and the second light-shielding layer 402. The first light-shielding layer 401 is provided with first light-transmitting holes 401a arranged in an array, and the second light-shielding layer 402 is provided with second light-transmitting holes 402a corresponding to the first light-transmitting holes 401a. The first light-transmitting holes 401a and their corresponding second light-transmitting holes 402a define a light transmission channel Q.

[0120] See Figure 6 As shown, the orthographic projections of the first light-transmitting hole 401a and its corresponding second light-transmitting hole 402a onto the substrate 1 completely overlap. The apertures of both the first and second light-transmitting holes 401a and 402a are d, and the thickness of the optical path structure 4 is H. The light-emitting angle of the light-transmitting channel Q is in the range [0°, arctan(d / H)]. If a pre-set critical angle α for crosstalk is required to essentially eliminate crosstalk caused by reflected light, then arctan(d / H) ≤ α, i.e., d / H ≤ tanα.

[0121] In addition, the reflected light formed by the reflection of the fingerprint path generally also has a maximum angle θmax. When the collimation junction adopts a two-layer light-shielding layer structure, in order to prevent light crosstalk, the thickness H of the light path structure 4 and the arrangement period P (distance between the center points of adjacent light-transmitting holes) of the light-shielding layer must satisfy: arctan(P / H)≤θmax, that is, P / H≤θmax.

[0122] Figure 7This is a cross-sectional schematic diagram of the optical path structure in an embodiment of this disclosure, such as... Figure 7 As shown, with Figure 6 The first light-transmitting hole 401a and its corresponding second light-transmitting hole 402a shown in the figure have completely overlapping orthographic projections on the substrate 1, but are different. Figure 7 In the illustrated case, the first light-transmitting hole 401a and its corresponding second light-transmitting hole 402a are staggered, and this structure can also play a collimation role to a certain extent. For Figure 7 In the case shown, the aperture d of the first light-transmitting hole 401a and the second light-transmitting hole 402a, the thickness H of the optical path structure 4, and the period P of the light-transmitting holes on the light-shielding layer can be set according to actual needs.

[0123] Figure 8 This is a cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure. Figure 9 for Figure 8 The diagram shows a cross-sectional schematic of the optical path structure in the display panel. Figure 10 for Figure 9 The diagram shows various schematic representations of the first light-transmitting hole and its corresponding second and third light-transmitting holes projected onto the substrate in the quasi-connection structure, such as... Figures 8 to 10 As shown, this differs from the optical path structure 4 shown in the previous embodiment. Figure 8 and Figure 9 The optical path structure 4 shown includes at least three light-shielding layers 401, 402, and 403. A light-transmitting layer is provided between each pair of adjacent light-shielding layers. The light-shielding layer closest to the photoelectric sensing structure is the first light-shielding layer 401, the light-shielding layer furthest from the photoelectric sensing structure is the second light-shielding layer 402, and the light-shielding layer located between the first light-shielding layer 401 and the second light-shielding layer 402 is the third light-shielding layer 403. The first light-shielding layer 401 is provided with first light-transmitting holes 401a arranged in an array. The second light-shielding layer 402 is provided with second light-transmitting holes 402a corresponding to the first light-transmitting holes 401a. The third light-shielding layer 403 is provided with third light-transmitting holes 403a corresponding to the first light-transmitting holes 401a. The first light-transmitting holes 401a and their corresponding second light-transmitting holes 402a and third light-transmitting holes 403a control and define the light transmission channel Q.

[0124] In some embodiments, the number of third light-shielding layers 403 is one. In this case, the optical path structure 4 is a stacked structure containing three light-shielding layers 401, 402, and 403.

[0125] In some embodiments, the orthographic projection shapes of the second light-transmitting hole 402a and the first light-transmitting hole 401a on the substrate 1 are approximately the same, and the ratio of the area of ​​the orthographic projection of the first light-transmitting hole on the substrate to the area of ​​the orthographic projection of the second light-transmitting hole on the substrate is in the range of [0.2, 1].

[0126] See Figures 8 to 10As shown in the figure, in some embodiments, the first light-transmitting hole 401a has a rectangular cross-sectional shape on a plane parallel to the plane of the substrate 1. Further, the first light-transmitting hole 401a has a square cross-sectional shape on a plane parallel to the plane of the substrate 1.

[0127] See Figures 8 to 10 As shown, in some embodiments, the orthographic projection shape of the third light-transmitting hole 403a and the first light-transmitting hole 401a on the substrate 1 is approximately the same, and the orthographic projection area of ​​the third light-transmitting hole 403a on the substrate 1 is approximately equal to that of the first light-transmitting hole 401a on the substrate 1. When the orthographic projection shape and orthographic projection area of ​​the second light-transmitting hole 402a and the first light-transmitting hole 401a on the substrate 1 are the same, the first light-transmitting hole 401a, the second light-transmitting hole 402a, and the third light-transmitting hole 403a have the same shape and size, so each light-shielding layer can be prepared using the same process.

[0128] See Figures 8 to 10 As shown, in some embodiments, the orthographic projections of the first light-transmitting hole 401a, the second light-transmitting hole 402a corresponding to the first light-transmitting hole 401a, and the third light-transmitting hole 403a corresponding to the first light-transmitting hole 401a on the substrate 1 overlap, and the overlapping area is the area where the light-transmitting channel Q is located.

[0129] As an optional implementation, the orthographic projections of the first light-transmitting hole 401a and the second light-transmitting hole 402a corresponding to the first light-transmitting hole 401a on the substrate 1 completely overlap; the orthographic projections of the first light-transmitting hole 401a and the third light-transmitting hole 403a corresponding to the first light-transmitting hole 401a on the substrate partially overlap.

[0130] In some embodiments, the shape of the overlapping portion of the orthographic projections of the first light-transmitting hole 401a and its corresponding third light-transmitting hole 403a onto the plane of the substrate 1 is square. Figure 9 and Figure 10 In the middle, the overlapping area is the area where the light transmission channel Q is located and is square in shape.

[0131] See Figures 8 to 10As shown, in some embodiments, the orthographic projections of the first light-transmitting hole 401a, the second light-transmitting hole 402a, and the third light-transmitting hole 403a on the substrate are respectively the first orthographic projection 401b, the second orthographic projection 402b, and the third orthographic projection 403b; the areas of the first orthographic projection 401b, the second orthographic projection 402b, and the third orthographic projection 403b are approximately equal and all are squares, with one of any two intersecting sides of the square extending along a first direction and the other extending along a second direction; the first orthographic projection 401b and the second orthographic projection 402b completely overlap, and the first orthographic projection 401b and the third orthographic projection 403b partially overlap; the distance between the center of the first orthographic projection 401b and the center of the third orthographic projection 403b in the first direction and the distance in the second direction are equal.

[0132] Figure 10 Part (a) illustrates that the center of the third orthographic projection 403b is located at the upper left corner of the center of the first orthographic projection 401b / second orthographic projection 402b. Figure 10 Part (b) illustrates that the center of the third orthographic projection 403b is located at the lower left corner of the center of the first orthographic projection 401b / second orthographic projection 402b. Figure 10 Part (c) illustrates that the center of the third orthographic projection 403b is located at the upper right corner of the center of the first orthographic projection 401b / second orthographic projection 402b. Figure 10 Part (d) shows that the center of the third orthographic projection 403b is located at the lower right corner of the center of the first orthographic projection 401b / second orthographic projection 402b.

[0133] Furthermore, the side lengths of the first orthographic projection 401b, the second orthographic projection 402b, and the third orthographic projection 403b are all D. The distance between the center of the first orthographic projection 401b and the center of the third orthographic projection 403b in the first direction and the distance in the second direction are both T. The thickness of the optical path structure 4 is H, and the collimation angle θ of the light transmission channel Q within the optical path structure 4 is:

[0134] θ = arctan(DT) / H … Equation (1)

[0135] In some embodiments, the collimation angle θ ranges from [10°, 20°]. The angle θ can be determined by designing the values ​​of the side length D, distance T, and thickness H.

[0136] In some embodiments, the side length D ranges from 4µm to 10µm; the distance T ranges from 1µm to 3µm.

[0137] To achieve the collimation effect while avoiding crosstalk of light within the optical path structure 4, it is also necessary to rationally design the arrangement period of the light-transmitting holes, the thickness of each light-shielding layer, the thickness of each light-transmitting layer, and the overall thickness of the collimation structure.

[0138] In some embodiments, the arrangement period of the first light-transmitting hole 401a, the second light-transmitting hole 402a, and the third light-transmitting hole 403a is equal and is P. The thickness of the first light-shielding layer 401 is h1, the thickness of the second light-shielding layer 402 is h2, the thickness of the third light-shielding layer 403 is h3, the thickness of the light-transmitting layer 411 located between the first light-shielding layer 401 and the third light-shielding layer 403 is H1, and the thickness of the light-transmitting layer 412 located between the second light-shielding layer 403 and the third light-shielding layer 403 is H2. D, T, H, P, h1, h2, h3, H1, and H2 satisfy the following relationship:

[0139] H / (P+D)≤(h1+h3+H1) / (D+T)≤(h2+H2) / (PT) …Equation (2)

[0140] Where H = h1 + h2 + h3 + H1 + H2.

[0141] More specifically, in some embodiments, the arrangement period P ranges from 5µm to 20µm; the thickness h1 of the first light-shielding layer 401 ranges from 1µm to 3µm; the thickness h2 of the second light-shielding layer 402 ranges from 1µm to 3µm; the thickness h3 of the third light-shielding layer 403 ranges from 1µm to 3µm; the thickness H1 of the light-transmitting layer 411 located between the first light-shielding layer 401 and the third light-shielding layer 403 ranges from 0.5µm to 4µm; and the thickness H2 of the light-transmitting layer 412 located between the second light-shielding layer 402 and the third light-shielding layer 403 ranges from 0.5µm to 4µm.

[0142] As an example that satisfies equation (2), the side length D is 4um, the thickness H1, thickness H2, thickness h1, thickness h2, and thickness h3 are all 1um, the distance T is 2.5um, and the arrangement period P of the light-transmitting holes is 10um; according to equation (1), the light-receiving angle θ≈16° can be calculated.

[0143] It should be noted that, Figure 8 and Figure 9 The optical path structure 4 shown in the diagram, which includes three light-shielding layers, is merely illustrative and does not limit the technical solution of this disclosure. In the embodiments of this disclosure, the number of light-shielding layers can be greater than three, and the positional relationship of the light-transmitting holes on each light-shielding layer can also be adjusted according to actual needs. It is only necessary to ensure that the light-transmitting holes on the multiple light-shielding layers can define a light-transmitting channel Q with a collimation effect. Specific cases will not be described in detail here.

[0144] See Figure 5 and Figure 8As shown, in some embodiments, a second planarization layer 11 is provided on the side of the photoelectric sensing structure away from the substrate 1. The material of the second planarization layer 11 includes: a light-shielding material; the second planarization layer 11 is reused as the first light-shielding layer 401.

[0145] Furthermore, a first passivation layer 9 is disposed between the second planarization layer 11 and the photoelectric sensing structure.

[0146] In some embodiments, a pixel defining layer 24 is disposed on the side of the second planarization layer 11 away from the substrate 1. The pixel defining layer 24 has a pixel opening. The light-emitting layer 302 is located inside the pixel opening. The second electrode 303 is located on the side of the pixel defining layer 24 away from the substrate 1. The material of the pixel defining layer 24 includes: a light-shielding material. The pixel defining layer 24 is reused as a second light-shielding layer 402.

[0147] Furthermore, a filter layer 26 is disposed between the second electrode 303 and the pixel defining layer 24. The filter layer 26 fills the second light-transmitting hole 402a on the pixel defining layer 24 and is configured to filter out non-visible light in the transmitted light.

[0148] In some embodiments, an isolation dam 25 is provided between the filter layer 26 and the second electrode 303, surrounding the pixel opening. The isolation dam 25 is disposed between adjacent pixel openings to prevent color mixing during the subsequent deposition of the light-emitting layer 302 within the pixel opening via a vapor deposition process.

[0149] Figure 11 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure, as shown below. Figure 11 As shown, with Figure 5 and Figure 8 The situation shown is different, in Figure 11 The filter layer 26 in the display panel shown is located between the first light-shielding layer 401 and the second light-shielding layer 402, and the filter layer 26 is reused as at least one light-transmitting layer.

[0150] When the optical path structure 4 includes only two light-shielding layers (i.e., the first light-shielding layer 401 and the second light-shielding layer 402), the filter layer 26 can be reused as a light-transmitting layer located between the first light-shielding layer 401 and the second light-shielding layer 402. No corresponding figure is given for this case.

[0151] See Figure 11 As shown, when the optical path structure 4 includes three light-shielding layers, as an example, the filter layer 26 can reuse a light-transmitting layer 412 located between the second light-shielding layer 402 and the third light-shielding layer 403. Of course, the filter layer 26 can also be reused as a light-transmitting layer 411 located between the first light-shielding layer 401 and the third light-shielding layer 403, but no corresponding figure is given for this case.

[0152] In addition, when the optical path structure 4 includes multiple light-shielding layers, the filter layer 26 is reused as a light-transmitting layer between any two adjacent light-shielding layers.

[0153] In this embodiment, since the filter layer 26 is located between the first light-shielding layer 401 and the second light-shielding layer 402, other film layers are needed to fill the second light-transmitting hole 402a on the second light-shielding layer 402 to facilitate the fabrication of other film layer structures later. See also Figure 11 As shown, in some embodiments, a filling layer 27 is provided between the second electrode 303 and the pixel defining layer 24, the filling layer 27 fills the second light-transmitting hole 402a on the pixel defining layer 24, and an isolation dam 25 surrounding the pixel opening is provided between the filling layer 27 and the second electrode 303.

[0154] In some embodiments, the filler layer 27 is made of a transparent resin material.

[0155] Figure 12 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure, as shown below. Figure 12 As shown, with Figure 11 Unlike the method that uses a filling layer 27 to fill the second light-transmitting hole 402a on the pixel boundary layer 24, this method uses a filling layer 27. Figure 12 The display panel shown does not have a filling layer 27. Instead, the material of the isolation dam 25 is used directly to fill the second light-transmitting hole 402a on the pixel defining layer 24.

[0156] See Figure 5 , Figure 8 , Figure 11 and Figure 12 As shown, in some embodiments, the filter layer 26 includes an infrared filter layer configured to filter out infrared light. Under strong ambient light, most of the light passing through a finger is infrared light (wavelength range of 760nm to 1mm), while the reflected light emitted by the light-emitting element 3 after reflection from the textured surface is visible light (wavelength range of 400nm to 700nm). In this embodiment, the infrared filter layer is configured to block infrared light while allowing visible light to pass through, so that reflected light from the textured surface can pass through but infrared light passing through the finger cannot, thereby reducing or even completely eliminating the influence of ambient light on the photoelectric sensor 2 and improving the product's resistance to strong light.

[0157] See Figure 8 , Figure 11 and Figure 12 As shown, in some embodiments, the material of the third light-shielding layer 403 located between the first light-shielding layer 401 and the second light-shielding layer 402 includes a black resin material; the third light-shielding layer 403 can be prepared using a patterning (photo) process or an embossing process. It should be noted that... Figure 8 , Figure 11and Figure 12 Only one third light-shielding layer 403 is shown as an example in this disclosure. In this embodiment, the number of third light-shielding layers 403 can also be multiple.

[0158] In actual production, it has been found that as the number of continuously prepared organic layers (such as light-shielding layers and light-transmitting layers) increases, the morphology of the organic layers becomes increasingly difficult to control, easily leading to abnormalities in the prepared organic layers (e.g., uneven organic layer surfaces). In the embodiments of this disclosure, when the optical path structure 4 adopts a structure of three light-shielding layers plus two light-transmitting layers, if both the light-shielding and light-transmitting layers are prepared using organic layers, a structure of five continuously stacked organic layers will be formed. At this point, the production process requirements are high, and the production difficulty is significant.

[0159] To address the aforementioned technical problems, this disclosure also provides corresponding solutions. Figure 13 A cross-sectional schematic diagram of another display panel provided in an embodiment of this disclosure, as shown below. Figure 13 As shown, with Figure 8 , Figure 11 and Figure 12 The situations shown are different. Figure 13 The material of the third light-shielding layer 403 in the pixel panel shown includes a metallic material. In this case, the use of a metallic material for the middle third light-shielding layer 403 effectively increases the number of continuously stacked organic layers, thereby reducing manufacturing process requirements.

[0160] In this embodiment of the disclosure, a second passivation layer (made of an inorganic insulating material, such as silicon oxide or silicon nitride) is provided between the third light-shielding layer 403 made of a metal material and the light-transmitting layer located on the side of the third light-shielding layer 403 closest to the substrate 1, in order to avoid the problem of low adhesion and easy peeling between the third light-shielding layer 403 made of a metal material and the light-transmitting layer made of an organic material.

[0161] It should be noted that when the third light-shielding layer 403 is made of a metallic material, the third light-shielding layer 403 may include multiple metallic patterns that are insulated from each other. Each light-emitting element 3 corresponds to one metallic pattern. The first electrode 301 in the light-emitting element 3 is electrically connected to the first drain 15a of the corresponding first transistor 17a through the corresponding metallic pattern. The first electrode 301 can be connected in parallel with the corresponding metallic pattern to reduce the equivalent resistance at the first electrode 301.

[0162] See also Figure 1 , Figure 5 , Figure 8 , Figure 11 , Figure 12 , Figure 13As shown, in some embodiments, the display panel further includes: a driving circuit layer, which is located between the substrate 1 and the photoelectric sensing structure. The driving circuit layer has a plurality of first transistors 17a corresponding to the light-emitting element 3 and a plurality of second transistors 17b corresponding to the photoelectric sensor 2. The drain of the first transistor 17a is electrically connected to the first electrode 301 in the corresponding light-emitting element 3, and the drain of the second transistor 17b is electrically connected to the third electrode 201 in the corresponding photoelectric sensor 2.

[0163] In some embodiments, the driving circuit layer includes a source layer, a first gate insulating layer 5, a first gate conductive layer, a second gate insulating layer 6, a second gate conductive layer, an interlayer dielectric layer 7, a first source / drain conductive layer, and a first planarization layer 8, which are sequentially stacked along the direction away from the substrate 1. The first planarization layer 8 also has a second source / drain conductive layer on the side away from the substrate 1, and the second source / drain conductive layer includes a third electrode 201.

[0164] The first active layer includes a first active pattern 12a and a second active pattern 12b disposed on the same layer; the first gate conductive layer includes at least a first gate 13a and a second gate 13b disposed on the same layer (and may also include gate lines and other structures); the second gate conductive layer includes at least a capacitor electrode 16 (and may also include other conductive structures, such as signal traces, various electrodes, etc.), and the capacitor electrode can form a storage capacitor with the first gate 13a; the source-drain conductive layer includes at least a first source 14a, a first drain 15a, a second source 14b, and a second drain 15b disposed on the same layer (and may also include data lines and other structures), the first source 14a and the first... The drain 15a is electrically connected to the first active pattern 12a through a via, and the second source 14b and the second drain 15b are electrically connected to the second active pattern 12b through a via. The first gate 13a, the first source 14a, the first drain 15a and the first active pattern 12a constitute the first transistor 17a, and the second gate 13b, the second source 14b, the second drain 15b and the second active pattern 12b constitute the second transistor 17b. The second source-drain conductive layer includes a first transition electrode 10 and a second transition electrode. The first transition electrode 10 is electrically connected to the first drain 15a through a via, and the second transition electrode is electrically connected to the second drain 15b through a via. The second transfer electrode is reused as the third electrode 201 in the photoelectric sensor 2. At this time, the third electrode 201 in the photoelectric sensor 2 is electrically connected to the second drain 15b of the corresponding second transistor 17b. The first electrode 301 in the light-emitting element 3 is electrically connected to the first transfer electrode 10 through a via. At this time, the first electrode 301 in the light-emitting element 3 is electrically connected to the first drain 15a of the corresponding first transistor 17a.

[0165] In some embodiments, a bias voltage line 23 is provided on the side of the photoelectric sensing structure away from the substrate 1. The bias voltage line 23 is electrically connected to the fourth electrode 203 and is disposed in the same layer as the first electrode 301. The bias voltage line 23 and the first electrode 301 can be made of metal materials or alloy materials such as copper, aluminum, titanium, and molybdenum.

[0166] In some embodiments, the second electrode 303 is provided with an encapsulation layer and a cover plate 22 on the side away from the substrate 1, with the cover plate 22 located on the side of the encapsulation layer 18 away from the substrate 1. Generally, the encapsulation layer 18 includes alternating inorganic and organic encapsulation layers, for example, the encapsulation layer 18 is a three-layer encapsulation structure with two inorganic encapsulation layers sandwiching an organic encapsulation layer in between. The cover plate 22 is a transparent cover plate, and the material of the cover plate 22 can be polyimide (PI) or glass, etc.

[0167] In some embodiments, a touch function layer 20 is provided between the encapsulation layer 18 and the cover plate 22. The touch function layer 20 is a film structure with touch function. It can be directly formed on the cover plate 22 by film deposition process (including thin film deposition, thin film patterning, etc.) and then fixed to the encapsulation layer 18 by optical adhesive 19 (OCA adhesive), or it can be directly formed on the encapsulation layer 18 by film deposition process, or the touch function layer 20 can be prepared on another substrate 1 first, and then the touch function layer 20 can be fixed to the cover plate 22 and the encapsulation layer 18 by optical adhesive 19.

[0168] In some embodiments, a circular polarizer 21 is disposed between the encapsulation layer 18 and the cover plate 22. The circular polarizer 21 is used to block light reflected from the surface of the metal electrodes inside the display panel to improve display contrast. The circular polarizer 21 can be fixed to other structures by optical adhesive 19.

[0169] It should be noted that when both the touch function layer 20 and the circular polarizer 21 exist between the encapsulation layer 18 and the cover plate 22, the circular polarizer 21 is generally located on the side of the touch function layer 20 away from the cover plate 22.

[0170] The display panel in this embodiment can be fabricated using the following steps: First, an active layer, a first gate insulating layer 5, a first gate conductive layer, a second gate insulating layer 6, a second gate conductive layer 16, an interlayer dielectric layer 7, a first source / drain conductive layer, a first planarization layer 8, a second source / drain conductive layer (including a third electrode 201), a photoelectric conversion layer 202, a fourth electrode 203, a first passivation layer 9, an optical path structure 4, a first electrode 301, a pixel defining layer 24, an isolation dam 25, a light-emitting layer 302, a second electrode 303, and an encapsulation layer 18 are formed sequentially. Then, a touch function layer 20 and a circular polarizer 21 are formed sequentially on the cover plate 22 through deposition or bonding processes. Finally, the functional film layers on the cover plate 22 are bonded to the encapsulation layer 18 through a bonding process. In actual production, some of the above steps can be adjusted according to the actual product requirements.

[0171] When the optical path structure 4 contains a second light-shielding layer 402 and the pixel defining layer 24 is reused as the second light-shielding layer 402, the step of preparing a filter layer 26 is also included between the steps of preparing the pixel defining layer 24 and preparing the isolation dam 25, or the step of preparing a filter layer 26 is also included before preparing the second light-shielding layer 402 during the preparation of the optical path structure.

[0172] It should be noted that the different technical means in the above embodiments can be combined with each other, and the new technical solutions obtained by combination should also fall within the protection scope of this disclosure.

[0173] Furthermore, the technical solution in the above embodiment, where the optical path structure 4 includes multiple light-shielding layers and the light-transmitting channel Q is defined by light-transmitting holes on the multiple light-shielding layers, is a preferred embodiment in this disclosure. Taking the case where the optical path structure 4 includes three light-shielding layers as an example, by adjusting the positional relationship between the first light-transmitting hole 401a and its corresponding second light-transmitting hole 402a and third light-transmitting hole 403a, a light-transmitting channel Q with a cross-sectional area (parallel to the plane where the substrate 1 is located) smaller than the cross-sectional area of ​​each light-transmitting hole can be defined. That is, the aperture corresponding to the light-transmitting channel Q is smaller than the aperture of the light-transmitting hole, and theoretically, the aperture corresponding to the light-transmitting channel Q can be infinitely small and is not limited by the size of the aperture of the light-transmitting hole. When the collimation and light-receiving angle θ of the required light-transmitting channel Q is constant, the smaller the aperture corresponding to the light-transmitting channel Q, the smaller the thickness of the light-transmitting channel Q (i.e., the smaller the thickness of the optical path structure 4), which is more conducive to the thinning of the display panel.

[0174] Of course, the specific structures of the optical path structure 4 shown in the above embodiments are only illustrative and will not limit the technical solutions of this disclosure. Other structures can also be used for the optical path structure 4 in this disclosure, which will not be described in detail here.

[0175] Based on the same inventive concept, this disclosure also provides a method for preparing a display panel. Figure 14 This is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present disclosure, as shown below. Figure 14 As shown, this preparation method can be used to prepare the display panel provided in any of the preceding embodiments. The preparation method includes:

[0176] Step S1: Form a photoelectric sensing structure on the substrate.

[0177] Step S2: Form an optical path structure and a light-emitting structure on the side of the photoelectric sensing structure facing away from the substrate.

[0178] The light-emitting structure includes multiple light-emitting elements, each of which includes a first electrode, a light-emitting layer, and a second electrode arranged sequentially along the direction away from the substrate. The optical path structure is located between the photoelectric sensing structure and the second electrode.

[0179] For a detailed description of steps S1 and S2 above, please refer to the corresponding content in the previous embodiments, which will not be repeated here.

[0180] Based on the same inventive concept, this disclosure also provides a display device, which includes a display panel provided in any of the preceding embodiments and an outer frame for fixing the display panel. For a detailed description of the display panel, please refer to the corresponding content in the preceding embodiments, which will not be repeated here.

[0181] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.

Claims

1. A display panel, wherein, include: Base; A photoelectric sensing structure is located on one side of the substrate; A light-emitting structure is located on the side of the photoelectric sensing structure away from the substrate. The light-emitting structure includes a plurality of light-emitting elements, each of which includes a first electrode, a light-emitting layer, and a second electrode arranged sequentially along the direction away from the substrate. An optical path structure, located between the photoelectric sensing structure and the second electrode, is configured to collimate light rays located on the side of the photoelectric sensing structure away from the substrate and whose propagation direction is close to the photoelectric sensing structure; In the direction perpendicular to the substrate, the photoelectric sensing structure and the light-emitting structure do not overlap or partially overlap. In a direction perpendicular to the substrate, the optical path structure at least partially overlaps with the photoelectric sensing structure; The optical path structure includes: at least one light-shielding layer; the at least one light-shielding layer includes: a first light-shielding layer, a second light-shielding layer located on the side of the first light-shielding layer away from the substrate, and at least one third light-shielding layer located between the first light-shielding layer and the second light-shielding layer; a light-transmitting layer is provided between each adjacent light-shielding layer; the first light-shielding layer is provided with first light-transmitting holes arranged in an array, the second light-shielding layer is provided with second light-transmitting holes corresponding one-to-one with the first light-transmitting holes, and the third light-shielding layer is provided with third light-transmitting holes corresponding one-to-one with the first light-transmitting holes; the first light-transmitting holes and the corresponding second and third light-transmitting holes define a light transmission channel; the orthographic projections of the first light-transmitting hole, the second light-transmitting hole corresponding to the first light-transmitting hole, and the third light-transmitting hole on the substrate are respectively a first orthographic projection, a second orthographic projection, and a third orthographic projection; the areas of the first orthographic projection, the second orthographic projection, and the third orthographic projection are equal and the shape is a square; one of any two intersecting sides of the square extends along a first direction, and the other extends along a second direction; The side lengths of the first orthographic projection, the second orthographic projection, and the third orthographic projection are all D. The distance between the center of the first orthographic projection and the center of the third orthographic projection in the first direction and the distance in the second direction are both T. The thickness of the optical path structure is H. The collimation angle θ of the light-transmitting channel within the optical path structure satisfies the following relationship: θ = arctan(DT) / H; Where D ranges from 4µm to 10µm; T ranges from 1µm to 3µm. The collimation angle θ ranges from [10°, 20°].

2. The display panel according to claim 1, wherein, The photoelectric sensing structure includes: multiple photoelectric sensors, each photoelectric sensor corresponding to at least one light-transmitting channel.

3. The display panel according to claim 1, wherein, Each photoelectric sensor corresponds to n light-transmitting channels, where 1 ≤ n ≤ 10 and n is a positive integer.

4. The display panel according to claim 1, wherein, The number of the third light-shielding layers is 1.

5. The display panel according to claim 1, wherein, The first orthographic projection, the second orthographic projection, and the third orthographic projection at least partially overlap.

6. The display panel according to claim 1, wherein, The first orthographic projection and the second orthographic projection completely overlap; The first orthographic projection and the third orthographic projection at least partially overlap.

7. The display panel according to claim 6, wherein, The overlapping portion of the first orthographic projection and the third orthographic projection is square.

8. The display panel according to claim 1, wherein, The first, second, and third light-transmitting holes have the same period of P. The thickness of the first light-shielding layer is h1, the thickness of the second light-shielding layer is h2, and the thickness of the third light-shielding layer is h3. The thickness of the light-transmitting layer between the first and third light-shielding layers is H1, and the thickness of the light-transmitting layer between the second and third light-shielding layers is H2. D, T, H, P, h1, h2, h3, H1, and H2 satisfy the following relationship: H / (P+D)≤(h1+h3+H1) / (D+T)≤(h2+H2) / (PT).

9. The display panel according to claim 8, wherein, The value of P ranges from 5µm to 20µm. The value range of h1 is 1um to 3um; The value range of h2 is 1um to 3um; The value range of h3 is 1um to 3um; The value range of H1 is 0.5um to 4um; The value range of H2 is 0.5um to 4um.

10. The display panel according to claim 1, wherein, A second planarization layer is provided on the side of the photoelectric sensing structure away from the substrate, and the material of the second planarization layer includes: a light-shielding material; The second planarization layer is reused as the first light-shielding layer.

11. The display panel according to claim 10, wherein, A first passivation layer is disposed between the second planarization layer and the photoelectric sensing structure.

12. The display panel according to claim 11, wherein, A pixel defining layer is disposed on the side of the second planarization layer away from the substrate, and a pixel opening is formed on the pixel defining layer. The light-emitting layer is located inside the pixel opening, and the second electrode is located on the side of the pixel defining layer away from the substrate. The material of the pixel defining layer includes: a light-shielding material. The pixel defining layer is reused as the second light-shielding layer.

13. The display panel according to claim 12, wherein, A filter layer is disposed between the second electrode and the pixel defining layer. The filter layer fills the second light-transmitting hole on the pixel defining layer and is configured to filter out non-visible light.

14. The display panel according to claim 1, wherein, A filter layer is disposed between the first light-shielding layer and the second light-shielding layer, and the filter layer is configured to filter out non-visible light; The filter layer is reused as at least one of the light-transmitting layers.

15. The display panel according to claim 13, wherein, A filling layer is disposed between the second electrode and the pixel defining layer, and the filling layer fills the second light-transmitting hole on the pixel defining layer; An isolation dam is provided between the filling layer and the second electrode, surrounding the opening of the pixel.

16. The display panel according to claim 13, wherein, An isolation dam is provided between the second electrode and the pixel defining layer, and the isolation dam fills the second light-transmitting hole on the pixel defining layer and surrounds the pixel opening.

17. The display panel according to claim 13 or 14, wherein, The filter layer includes an infrared filter layer configured to filter out infrared light.

18. The display panel according to claim 1, wherein, When at least one third light-shielding layer is provided between the first light-shielding layer and the second light-shielding layer, the material of the third light-shielding layer includes: black resin material.

19. The display panel according to claim 1, wherein, When at least one third light-shielding layer is provided between the first light-shielding layer and the second light-shielding layer, the material of the third light-shielding layer includes: a metallic material.

20. The display panel according to claim 1, wherein, A second passivation layer is disposed between the third light-shielding layer and the light-transmitting layer located on the side of the third light-shielding layer closest to the substrate.

21. The display panel according to claim 1, wherein, The photoelectric sensing structure includes: a plurality of photoelectric sensors, each photoelectric sensor including: a third electrode, a photoelectric conversion layer and a fourth electrode arranged sequentially along a direction away from the substrate; The display panel further includes a driving circuit layer, which is located between the substrate and the photoelectric sensing structure. The driving circuit layer has a first transistor electrically connected to the light-emitting element and a second transistor electrically connected to the photoelectric sensor. The drain of the first transistor is electrically connected to the first electrode in the corresponding light-emitting element, and the drain of the second transistor is electrically connected to the third electrode in the corresponding photoelectric sensor.

22. The display panel according to claim 21, wherein, The driving circuit layer is provided with an active layer, a first gate insulating layer, a first gate conductive layer, a second gate insulating layer, a second gate conductive layer, an interlayer dielectric layer, a first source / drain conductive layer, and a first planarization layer stacked sequentially along the direction away from the substrate. A second source / drain conductive layer is disposed on the side of the first planarization layer away from the substrate, and the second source / drain conductive layer includes the third electrode.

23. The display panel according to claim 21, wherein, A bias voltage line is provided on the side of the photoelectric sensing structure away from the substrate. The bias voltage line is electrically connected to the fourth electrode and is disposed in the same layer as the first electrode.

24. The display panel according to claim 1, wherein, The second electrode has an encapsulation layer and a cover plate on the side away from the substrate, and the cover plate is located on the side of the encapsulation layer away from the substrate.

25. The display panel according to claim 24, wherein, A touch-sensitive layer is provided between the encapsulation layer and the cover plate.

26. The display panel according to claim 24, wherein, A circular polarizer is disposed between the encapsulation layer and the cover plate.

27. The display panel according to claim 1, wherein, The photoelectric sensing structure includes multiple photoelectric sensors, and the orthographic projection of the photoelectric sensors on the substrate does not overlap with the orthographic projection of the light-emitting element on the substrate; The substrate includes a plurality of first pixel regions arranged in an array and a plurality of second pixel regions arranged in an array, wherein the first pixel regions and the second pixel regions are alternately arranged in both the row and column directions; The light-emitting element is located within the first pixel area, and the photoelectric sensor is located within the second pixel area.

28. The display panel according to claim 1, wherein, The light-emitting element is an organic light-emitting diode.

29. A display device, wherein, include: The display panel and the outer frame that fixes the display panel as described in any of claims 1 to 28 above.

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