Sheath and temperature control of the processing kit in the substrate processing chamber

Abstract

This document provides embodiments of a substrate support. In some embodiments, a substrate support for use in a substrate processing chamber includes: a ceramic plate having a first side and a second side, the first side being configured to support a substrate and the second side being opposite to the first side, wherein the ceramic plate includes an electrode embedded therein; a ceramic ring disposed around the ceramic plate and having a first side and a second side opposite to the first side, wherein the ceramic ring includes an adsorption electrode and a heating assembly embedded therein; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radial interior, a radial exterior, and a heat insulator disposed between the radial interior and the radial exterior.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to substrate processing systems, and more specifically, to processing kits for use in substrate processing systems. Background Technology

[0002] Radio frequency (RF) power is commonly used in etching processes, for example, where very high aspect ratio holes are needed to form contacts or deep trenches for the infrastructure of laying electrical paths. RF power can be used for plasma generation and / or to generate a bias voltage on the substrate being processed to attract ions from the bulk plasma. Electrostatic chucks are used to electrostatically hold the substrate during processing to control substrate temperature. Electrostatic chucks typically include electrodes embedded in a dielectric plate and a cooling plate positioned below the dielectric plate. Processing kits may include edge rings, typically positioned above the cooling plate and surrounding the dielectric plate, to guide the substrate.

[0003] However, when the substrate is placed in the processing chamber after a long idle period, the temperature of the edge ring rises as the substrate is processed with two different RF powers. The temperature difference between the edge ring and the dielectric, compared to the dielectric and the processing gas, may lead to uneven chemical reactions between the edge ring and the processing gas, resulting in processing drift.

[0004] An RF power supply for generating a bias voltage is applied to a cooling plate. The inventors have observed that the height of the edge ring decreases due to ion bombardment during substrate processing, and the isopotential lines in the sheath generated by the bias RF power supply become closer to the edge ring and tilt, resulting in processing drift.

[0005] Therefore, the inventors provide an embodiment of an improved processing kit. Summary of the Invention

[0006] This document provides embodiments of a substrate support. In some embodiments, a substrate support for use in a substrate processing chamber includes: a ceramic plate having a first side and a second side, the first side being configured to support a substrate and the second side being opposite to the first side, wherein the ceramic plate includes an electrode embedded therein; a ceramic ring disposed around the ceramic plate and having a first side and a second side opposite to the first side, wherein the ceramic ring includes an adsorption electrode and a heating assembly embedded therein; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radial interior, a radial exterior, and a heat insulator disposed between the radial interior and the radial exterior.

[0007] In some embodiments, a substrate support for use in a substrate processing chamber includes: a ceramic plate having a first side and a second side, the first side being configured to support a substrate and the second side being opposite to the first side, wherein the ceramic plate includes an electrode and a heating assembly embedded in the ceramic plate; a ceramic ring surrounding the ceramic plate and having a first side and a second side opposite to the first side, wherein the ceramic ring includes an adsorption electrode and a heating assembly embedded in the ceramic ring, and wherein the ceramic ring is spaced apart from the ceramic plate; an edge ring disposed on the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring.

[0008] In some embodiments, a processing chamber includes: a chamber body having a substrate support disposed within an internal volume of the chamber body, wherein the substrate support includes: a cooling plate having a first coolant channel and a second coolant channel, the first coolant channel being disposed radially interiorly and the second coolant channel being disposed radially exteriorly, wherein the first coolant channel is fluidly independent of the second coolant channel; a ceramic plate disposed above the cooling plate and a gas channel extending from a bottom surface of the ceramic plate to a top surface of the ceramic plate; a ceramic ring coupled to and surrounding the cooling plate, the ceramic ring having a gap with the ceramic plate and having a heating assembly and a second gas channel extending from a bottom surface of the ceramic ring to a top surface of the ceramic ring; and a power source coupled to the heating assembly to control the temperature of the ceramic ring independently of the temperature of the ceramic plate.

[0009] Other and further embodiments of this disclosure are described below. Attached Figure Description

[0010] The embodiments of this disclosure have been briefly summarized above and are discussed in more detail below, and can be understood by referring to the exemplary embodiments of this disclosure illustrated in the accompanying drawings. However, the drawings illustrate only typical embodiments of this disclosure, and since this disclosure allows for other equivalent embodiments, the drawings should not be considered as limiting the scope.

[0011] Figure 1 A schematic side view of a processing chamber having a substrate support according to at least some embodiments of the present disclosure is shown.

[0012] Figure 2 A schematic partial side view of a substrate support according to at least some embodiments of the present disclosure is shown.

[0013] Figure 3 A schematic partial side view of a substrate support according to at least some embodiments of the present disclosure is shown.

[0014] Figure 4 A simplified schematic partial side view of a substrate support according to at least some embodiments of the present disclosure is shown.

[0015] For ease of understanding, the same reference numerals are used to represent the same elements in the figures where possible. For clarity, the figures are not drawn to scale and may be simplified. Elements and features in one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0016] This document provides embodiments of a substrate support and processing kit for use in a substrate processing chamber. The substrate support includes a ceramic plate having a support surface for supporting a substrate. The substrate support includes a processing kit having a ceramic ring disposed around the ceramic plate. The processing kit further includes an edge ring disposed on the ceramic ring to guide the substrate. The ceramic ring and ceramic plate are advantageously thermally insulated from each other to provide independent temperature control.

[0017] Figure 1 A schematic side view of a processing chamber (e.g., a plasma processing chamber) having a substrate support according to at least some embodiments of the present disclosure is illustrated. In some embodiments, the plasma processing chamber is an etching processing chamber. However, other types of processing chambers configured for different processes may also be used with the embodiments of the electrostatic chuck described herein, or modified for use with the embodiments of the electrostatic chuck described herein.

[0018] Chamber 100 is a vacuum chamber adapted to maintain a sub-atmospheric pressure within its internal volume 120 during substrate processing. Chamber 100 includes a chamber body 106 covered by a cover 104, which surrounds a processing volume 119 located in the upper half of the internal volume 120. Chamber 100 may also include one or more shielding elements 105 surrounding various chamber components to prevent unwanted reactions between these components and the ionized processing material. The chamber body 106 and cover 104 may be made of a metal, such as aluminum. The chamber body 106 may be grounded via coupling to ground 115.

[0019] A substrate support 124 is disposed within the internal volume 120 of the cavity to support and hold a substrate 122 (such as a semiconductor wafer) or other electrostatically holdable substrates. The substrate support 124 typically includes an electrostatic chuck 150 (hereinafter referred to as...). Figures 2-3(Described in more detail) and a hollow support shaft 112 for supporting the electrostatic chuck 150. The electrostatic chuck 150 includes a ceramic plate 152 and a cooling plate 136, the ceramic plate 152 having one or more electrodes 154 disposed therein. The hollow support shaft 112 provides conduits to supply the electrostatic chuck 150 with, for example, backside gas, process gas, fluid, coolant, electricity, etc. The substrate support 124 includes a ceramic ring 187 disposed around the ceramic plate 152 (see below). Figures 2-3 (To be described in more detail).

[0020] In some embodiments, the hollow support shaft 112 is coupled to a lifting mechanism 113 (such as an actuator or a motor), which provides a position for upper processing (e.g., Figure 1 The vertical movement of the electrostatic chuck 150 between the lower transfer position (not shown) and the lower transfer position (not shown). A bellows assembly 110 is disposed around a hollow support shaft 112 and coupled between the electrostatic chuck 150 and the bottom surface 126 of the chamber 100 to provide a resilient seal that allows vertical movement of the electrostatic chuck 150 while preventing vacuum loss from within the chamber 100. The bellows assembly 110 also includes a lower bellows flange 164 that contacts an O-ring 165 or other suitable sealing assembly that contacts the bottom surface 126 to further prevent chamber vacuum loss.

[0021] The hollow support shaft 112 provides a conduit for coupling a back-side gas supply 141, an adsorption power supply 140, and an RF source (e.g., an RF plasma power supply 170 and a bias power supply 117) to the electrostatic chuck 150. In some embodiments, the bias power supply 117 includes one or more RF bias power supplies. In some embodiments, the RF energy provided by the RF plasma power supply 170 may have a frequency of about 40 MHz or higher. The back-side gas supply 141 is located outside the chamber body 106 and supplies heat transfer gas to the electrostatic chuck 150. In some embodiments, the RF plasma power supply 170 and the bias power supply 117 are coupled to the electrostatic chuck 150 via separate RF matching networks (RF matching network 116 is shown only). In some embodiments, the substrate support 124 may alternatively include AC, DC, or RF bias power.

[0022] The substrate lift 130 may include a lifting pin 109 mounted on a platform 108 connected to a shaft 111 coupled to a second lifting mechanism 132 for raising and lowering the substrate lift 130, such that a substrate may be placed on or removed from an electrostatic chuck 150. The electrostatic chuck 150 may include a through-hole to receive the lifting pin 109. In some embodiments, a ceramic ring 187 may include a through-hole to receive the lifting pin 109. A bellows assembly 131 is coupled between the substrate lift 130 and the bottom surface 126 to provide a resilient seal that maintains a chamber vacuum during vertical movement of the substrate lift 130.

[0023] In some embodiments, the electrostatic chuck 150 includes a gas distribution channel 138 extending from a lower surface of the electrostatic chuck 150 (such as the bottom surface of a cooling plate 136) to various openings in the upper surface of the electrostatic chuck 150. The gas distribution channel 138 is configured to supply a back-side gas (such as nitrogen (N) or helium (He)) to the top surface of the electrostatic chuck 150 for use as a heat transfer medium. The gas distribution channel 138 is in fluid communication with a back-side gas supply 141 via a gas conduit 142 to control the temperature and / or temperature distribution of the electrostatic chuck 150 during use.

[0024] Chamber 100 is coupled to and in fluid communication with vacuum system 114, which includes a throttle valve (not shown) and a vacuum pump (not shown) for venting chamber 100. The pressure inside chamber 100 can be regulated by adjusting the throttle valve and / or the vacuum pump. Chamber 100 is also coupled to and in fluid communication with process gas supply 118, which supplies one or more process gases to chamber 100 for processing a substrate disposed therein.

[0025] In operation, for example, plasma 102 can be generated in the internal volume 120 of the chamber to perform one or more processes. Plasma 102 can be generated by coupling power from a plasma power source (such as RF plasma power supply 170) to the process gas via one or more electrodes near or within the internal volume 120 to ignite the process gas and generate plasma 102. Bias power can also be supplied from a bias power supply (such as bias power supply 117) to one or more electrodes 154 within the electrostatic chuck 150 to attract ions from the plasma to the substrate 122.

[0026] Figure 2A schematic partial side view of a substrate support according to at least some embodiments of the present disclosure is illustrated. A ceramic plate 152 includes a first side 216 and a second side 224, the first side 216 being configured to support a substrate 122, and the second side 224 being opposite to the first side 216. The ceramic plate 152 includes one or more electrodes 154 embedded therein. The one or more electrodes 154 may be unipolar or bipolar. In some embodiments, the ceramic plate 152 provides Coulombic chucking. In some embodiments, the ceramic plate 152 provides Johnsen-Rahbek adsorption. In some embodiments, the one or more electrodes 154 include an upper electrode, a lower electrode, and a plurality of posts electrically coupled to the upper and lower electrodes. In some embodiments, the ceramic plate 152 includes one or more heating elements 246 embedded therein to control the temperature of the ceramic plate 152. In some embodiments, the ceramic plate 152 is made of aluminum nitride (AlN) or aluminum oxide (Al2O3).

[0027] A ceramic ring 187 is disposed around a ceramic plate 152, with a gap between the ceramic ring 187 and the ceramic plate 152. The ceramic ring 187 includes a first side 244 and a second side 226 opposite to the first side 244. In some embodiments, the first side 244 is an upper side. In some embodiments, the ceramic ring 187 includes one or more adsorption electrodes 228 embedded therein. The one or more adsorption electrodes 228 may be unipolar or bipolar. In some embodiments, the ceramic ring 187 provides coulombic adsorption. In some embodiments, the ceramic ring 187 provides Johnsen-Rahbek adsorption. An edge ring 210 is disposed on the ceramic ring 187. In some embodiments, the edge ring 210 is made of silicon (Si). In some embodiments, at least one of the first side 244 of the ceramic ring 187 or the lower surface of the edge ring 210 is ground to enhance thermal coupling between them. In some embodiments, at least one of the first side 244 of the ceramic ring 187 or the lower surface of the edge ring 210 includes surface contouring (such as peaks, valleys, channels, etc.) to enhance the thermal coupling between the first side 244 of the ceramic ring 187 and the lower surface of the edge ring 210 by spreading the flow of back-side gas from the back-side gas supply 141 (e.g., via the second gas channel 256 discussed below). In some embodiments, a thermal pad 284 may be disposed between the edge ring 210 and the ceramic ring 187 to enhance the thermal coupling between them. One or more adsorption electrodes 228 are coupled to the adsorption power supply 254 to hold the edge ring 210. In some embodiments, the outer diameter of the edge ring 210 is similar to the outer diameter of the ceramic ring 187. In some embodiments, the outer diameter of the edge ring 210 is larger than the outer diameter of the ceramic ring 187. The edge ring 210 includes an angled inner surface 212 disposed between the uppermost surface and the second upper surface 214 of the edge ring 210. In some embodiments, the ceramic ring 187 is made of aluminum nitride (AlN) or aluminum oxide (Al2O3).

[0028] In some embodiments, a bias power supply 117 is electrically coupled to a cooling plate 136 to generate the same bias voltage on the substrate 122 and the edge ring 210. In operation, the bias power supply 117 applied to the cooling plate 136 creates a sheath between the substrate 122 and the plasma 102. As a result, ions from the plasma 102 are attracted to the biased substrate 122, and the ions accelerate through the sheath perpendicular to the isopotential lines within it. As the edge ring 210 erodes over time due to the processing, the shape of the sheath bends near the edge of the substrate 122, resulting in uneven processing of the substrate 122.

[0029] To minimize the impact on substrate 122 and DC voltage control, one or more adsorption electrodes 228 are coupled to a negative pulse DC power supply 258. The negative pulse DC power supply 258 is configured to provide a power profile to correct for sheath bending and maintain a substantially flat sheath profile across substrate 122. In some embodiments, one or more adsorption electrodes 228 are positioned less than 0.3 mm from the bottom of edge ring 210 to provide effective coupling of negative pulse DC power to edge ring 210. In some embodiments, one or more electrodes 154 of ceramic plate 152 are coupled to a negative pulse DC power supply 266. The negative pulse DC power supply 266 is configured to provide a power profile independently of negative pulse DC power supply 258 to correct for sheath bending and maintain a substantially flat sheath profile across substrate 122. In some embodiments, an RF power supply 264 is coupled to one or more adsorption electrodes 228 to provide RF bias power to ceramic ring 187 independently of bias power supply 117 for additional sheath control.

[0030] The ceramic ring 187 includes a heating element 219 embedded within it. The heating element 219 is coupled to a power source 268 (such as AC power) to heat the heating element 219. In some embodiments, a temperature probe is embedded within or otherwise coupled to the ceramic ring 187 to monitor and control the temperature of the ceramic ring 187 by controlling the power applied to the heating element 219 by the power source 268. In some embodiments, an adsorption electrode 228 is disposed between the first side 244 and the heating element 219.

[0031] In some embodiments, heating assembly 246 is embedded in ceramic plate 152 to heat ceramic plate 152. Heating assembly 246 may be coupled to power supply 268 or another power supply. Ceramic ring 187 is separated from ceramic plate 152 to prevent arcing.

[0032] In some embodiments, the outer diameter of the radially inner 208 is substantially equal to the outer diameter of the ceramic plate 152. In some embodiments, the thickness of the ceramic ring 187 from the first side to the second side is advantageously greater than the thickness of the ceramic plate 152 from the first side to the second side, in order to reduce the global impact of the sheath on the substrate when the respective RF power is applied to the adsorption electrode 228. In some embodiments, the radially inner 208 is raised relative to the radially outer 218 to provide space for the thicker ceramic ring 187 or to provide space for the edge ring 210.

[0033] Ceramic ring 187 and ceramic plate 152 are coupled to cooling plate 136 to control their temperatures. In some embodiments, cooling plate 136 is made of a conductive material (e.g., aluminum (Al)). Cooling plate 136 is coupled to a second side 224 of ceramic plate 152 and a second side 226 of ceramic ring 187. In some embodiments, cooling plate 136 rests on insulating plate 286. In some embodiments, insulating plate 286 is made of alumina (Al2O3) or polyphenylene sulfide (PPS).

[0034] Cooling plate 136 includes a radially inner portion 208 and a radially outer portion 218. A thermal break 275 is disposed between the radially inner portion 208 and the radially outer portion 218 to provide dual heating zones for cooling plate 136. In some embodiments, the thermal break 275 includes an annular channel extending from the upper surface of cooling plate 136 to a location between the upper and lower surfaces of cooling plate 136. The radially inner portion 208 includes a first coolant channel 242. The first coolant channel 242 is configured to allow coolant of a first temperature to flow through it to cool ceramic plate 152. The radially outer portion 218 includes a second coolant channel 252 within the radially outer portion 218, configured to allow coolant of a second temperature to circulate through it to cool ceramic ring 187. In some embodiments, the first temperature is lower than the second temperature. In some embodiments, the first coolant channel 242 is fluidly independent of the second coolant channel 252. In some embodiments, the heat insulator 275 extends from the upper surface of the cooling plate 136 beyond the first coolant channel 242 and the second coolant channel 252 to increase thermal decoupling between the radial interior 208 and the radial exterior 218.

[0035] The first coolant passage 242 and the second coolant passage 252 are coupled to a cooler 272, which is configured to circulate coolant therethrough. In some embodiments, a ceramic ring 187 is separated from the radial interior 208 of a cooling plate 136 to prevent thermal coupling between them. In some embodiments, a ceramic plate 152 is separated from the radial exterior 218 of a cooling plate 136 to prevent thermal coupling between them.

[0036] In some embodiments, bonding layer 230 is disposed between ceramic plate 152 and the radial interior 208 of cooling plate 136. Bonding layer 230 is configured to provide improved thermal coupling between the radial interior 208 and ceramic plate 152. In some embodiments, bonding layer 230 comprises silicone resin. In some embodiments, bonding layer 230 has a thickness of about 0.1 mm to about 0.4 mm. In some embodiments, bonding layer 230 has a thermal conductivity of about 0.2 W / mK to about 1.2 W / mK. In some embodiments, bonding layer 262 is disposed between ceramic ring 187 and radial exterior 218. In some embodiments, bonding layer 262 is similar to bonding layer 230.

[0037] In some embodiments, an O-ring 250 is disposed between the ceramic plate 152 and the ceramic ring 187 to provide a seal against back-side gas and a seal against plasma 102 to prevent erosion of bonding layers 262 and 230. In some embodiments, the O-ring 250 is disposed in the upper inner notch of the ceramic ring 187. In some embodiments, an O-ring 260 is disposed between the ceramic ring 187 and the cooling plate 136 to provide a seal against back-side gas and a seal against plasma 102 to prevent erosion of bonding layer 262. In some embodiments, the O-ring 260 is disposed in at least one of the lower outer notch of the ceramic ring 187 or the upper outer notch of the cooling plate 136.

[0038] In some embodiments, such as Figure 2 As shown, the gas distribution channel 138 includes a first gas channel 238 that extends from the bottom of the radial outer side 218 via an insulating plate 286, a cooling plate 136 radially inner side 208, and a ceramic plate 152 to a first side 216 or top surface of the ceramic plate 152. In some embodiments, the gas distribution channel 138 includes a second gas channel 256 that extends through the insulating plate 286, through the radial outer side 218 of the cooling plate 136, and through the ceramic ring 187 to a first side 244 of the ceramic ring 187. The first gas channel 238 and the second gas channel 256 are configured to provide a back-side gas (such as nitrogen (N) or helium (He)) to the top surface of the ceramic plate 152 and the ceramic ring 187, respectively, for use as a heat transfer medium. In some embodiments, the first gas channel 238 and the second gas channel 256 are fluid-independent within the substrate support 124 to provide independent temperature control of the substrate 122 and the edge ring 210.

[0039] Figure 3A schematic partial side view of a substrate support according to at least some embodiments of the present disclosure is illustrated. In some embodiments, a bias power supply 117 is optionally electrically coupled via a conduit 312 to one or more electrodes 154 of a ceramic plate 152 to provide RF power to the one or more electrodes 154. In some embodiments, the bias power supply 117 includes a first RF source 310 and a second RF source 320. In some embodiments, the first RF source 310 provides RF power at a first frequency different from a second frequency of the RF power provided by the second RF source 320. The first RF source 310 and the second RF source 320 are coupled to a matching network 316. In some embodiments, the matching network 316 is an RF matching network 116, which in some embodiments is configured to adjust the impedance matching of the first RF source 310 and the second RF source 320. In some embodiments, the matching network 316 is configured to split the RF power from the first RF source 310 and the second RF source 320 to each of the ceramic plate 152 and the ceramic ring 187. The controller 330 is coupled to the matching network 316 to control the distribution of power from the first RF source 310 and the second RF source 320. In some embodiments, the matching network 316 and / or the controller 330 include a central processing unit (CPU), multiple support circuits, and memory.

[0040] Figure 4 A simplified schematic partial side view of a substrate support according to at least some embodiments of the present disclosure is illustrated. In some embodiments, a second ceramic ring 410 is disposed around an edge ring 210. In some embodiments, the second ceramic ring 410 is made of quartz. In some embodiments, the second ceramic ring 410 is disposed around both a ceramic ring 187 and an edge ring 210. In some embodiments, the second ceramic ring 410 rests on a third ceramic ring 420. The third ceramic ring 420 is disposed around a cooling plate 136. In some embodiments, the third ceramic ring 420 is made of quartz. In some embodiments, the ceramic ring 187 may include a through-hole to receive a lifting pin 109 to raise or lower the edge ring 210. In some embodiments, as Figure 4 As shown, a third ceramic ring 420 is coupled to an actuator 430 for raising or lowering at least one of the second ceramic ring 410 or the edge ring 210 to facilitate removal from the chamber 100. In some embodiments, the second ceramic ring 410 includes an inner lip 406 on which the edge ring 210 rests. In these embodiments, when the third ceramic ring 420 is raised, both the second ceramic ring 410 and the edge ring 210 are raised uniformly.

[0041] While the foregoing describes embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure.

Claims

1. A substrate support for use in a substrate processing chamber, comprising: A ceramic plate having a first side and a second side, the first side being configured to support a substrate and the second side being opposite to the first side, wherein the ceramic plate includes electrodes embedded therein; A ceramic ring, the ceramic ring being disposed around the ceramic plate and having a first side and a second side opposite to the first side, wherein the ceramic ring includes an adsorption electrode and a heating assembly embedded in the ceramic ring; as well as A cooling plate coupled to a second side of the ceramic plate and a second side of the ceramic ring, wherein the cooling plate includes a radial interior, a radial exterior, and a heat insulator disposed between the radial interior and the radial exterior. The ceramic ring includes an upper inner recess, wherein the upper inner recess includes an O-ring to provide a seal between the ceramic ring and the ceramic plate, and a second O-ring is disposed between the ceramic ring and the cooling plate at a position radially outward of the ceramic plate.

2. The substrate support as claimed in claim 1, wherein the radial interior is raised relative to the radial exterior.

3. The substrate support as claimed in claim 1, wherein the outer diameter of the radial interior of the cooling plate is substantially equal to the outer diameter of the ceramic plate.

4. The substrate support as claimed in claim 1, wherein the thickness of the ceramic ring from the first side to the second side is greater than the thickness of the ceramic plate from the first side to the second side.

5. The substrate support of claim 1, wherein the heat insulator includes an annular channel extending from the upper surface of the cooling plate toward the lower surface of the cooling plate.

6. The substrate support as described in any one of claims 1 to 5, further comprising a bonding layer disposed between the ceramic ring and the cooling plate.

7. The substrate support member according to any one of claims 1 to 5, further comprising an edge ring disposed on the ceramic ring.

8. The substrate support as claimed in any one of claims 1 to 5, further comprising a first gas channel extending from the first side through the ceramic ring to the second side.

9. The substrate support as claimed in any one of claims 1 to 5, further comprising a second gas channel extending from the first side of the ceramic ring to the second side of the ceramic ring.

10. The substrate support member as described in any one of claims 1 to 5, further comprising: A heating element, which is embedded in the ceramic plate; as well as An edge ring is disposed on the ceramic ring.

11. The substrate support of claim 10, wherein the cooling plate includes a first coolant channel and a second coolant channel, the first coolant channel being in the radial interior and configured to circulate coolant, the second coolant channel being in the radial exterior and configured to circulate coolant, wherein the first coolant channel is fluidly independent of the second coolant channel.

12. The substrate support of claim 10, further comprising a second ceramic ring disposed around the ceramic ring and the edge ring.

13. The substrate support of claim 12, further comprising a third ceramic ring supporting the second ceramic ring, wherein when the third ceramic ring is raised, the third ceramic ring is configured to raise the second ceramic ring and the edge ring.

14. The substrate support of claim 10, wherein at least one of the first side of the ceramic ring or the lower surface of the edge ring includes a surface profile modification configured to enhance thermal coupling between the edge ring and the ceramic ring.

15. A processing chamber, comprising: A chamber body having a substrate support member as described in any one of claims 1 to 5 disposed within the internal volume of the chamber body; as well as A power source, coupled to the heating assembly, controls the temperature of the ceramic ring independently of the temperature of the ceramic plate.

16. The processing chamber of claim 15, wherein the ceramic ring includes an adsorption electrode embedded in the ceramic ring, and the ceramic plate includes an electrode embedded in the ceramic plate.

17. The processing chamber of claim 16, wherein the adsorption electrode is coupled to a negative pulse DC power supply.

18. The processing chamber of claim 16, wherein the adsorption electrode is coupled to an RF power supply.

19. The processing chamber of claim 16, further comprising a matching network coupled to the electrode of the ceramic plate and the adsorption electrode of the ceramic ring.

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