A silicon resonant pressure sensor based on electrostatic excitation capacitance detection

Abstract

The present invention discloses a silicon resonant pressure sensor based on electrostatic excitation capacitance detection, comprising a glass layer, a resonator layer and a sensitive film layer arranged in sequence, wherein the sensitive film layer comprises a pressure-sensitive film and two silicon islands fixed on the pressure-sensitive film layer; the resonator layer comprises two movable anchor points respectively connected to the two silicon islands; the two sides of one end of each movable anchor point are respectively connected to the first ends of two resonant beams, the second ends of the resonant beams on the same side are connected to the same mass block, and the two mass blocks are connected through a coupling beam; the coupling beam comprises four single beams connected to the connection point at one end; an excitation structure is arranged outside the resonant beam, and a detection structure is arranged outside the excitation structure. The coupling beam of the present invention is a four-point contact coupling beam, which can effectively reduce the influence of acceleration shock on the coupling beam structure while satisfying the coupling of the two mass blocks and providing stiffness for the resonator to increase the modal frequency interval, thereby ensuring the stability of the sensor operation.

Description

Technical Field

[0001] The present invention belongs to the technical field of pressure sensors, and in particular relates to a silicon resonant pressure sensor based on electrostatic excitation capacitance detection. Background Art

[0002] The output signal of the silicon resonant pressure sensor is a frequency signal, which has the characteristics of "quasi-digital" output. It is easy to form an electrical measurement and control system with computer digital equipment, and has high stability and high resolution. In addition, the resonant frequency is an inherent property of the structure, which only depends on the mechanical properties of the structure and is not affected by the circuit signal drift. Therefore, the resonant pressure sensor has the advantages of high precision, good long-term stability, high resolution, strong anti-interference ability and low power consumption, and the accuracy is better than 0.01% FS. MEMS resonant pressure sensor is the pressure sensor with the most comprehensive technical advantages in the world today. It represents a high level of pressure sensor technology and is widely used in various high-precision test fields, such as airborne atmospheric data test systems, aviation atmospheric data calibrators, cabin pressure tests, aerospace ground test systems and high-performance wind tunnels. It has become the focus of research and development in the field of sensors in various countries.

[0003] Defects and shortcomings of the existing technology: In the existing technology, the main factor considered in the design of silicon resonant pressure sensors is the effect of temperature on sensor frequency drift, but how to avoid the impact of acceleration shock on the sensor has not been disclosed. In some practical application scenarios, the sensor will be subjected to accelerations of different directions and magnitudes, and may even cause a large torsional deformation of the sensor structure, causing the frequency, stress and lifting height of the resonant beam to change, resulting in an increase in the nonlinearity of the sensor frequency, which in turn affects the performance of the sensor. Summary of the invention

[0004] The present invention provides a silicon resonant pressure sensor based on electrostatic excitation capacitance detection, which effectively reduces the influence of acceleration shock on the coupling beam structure and ensures the working stability of the sensor.

[0005] To achieve the above-mentioned object, the present invention provides a silicon resonant pressure sensor based on electrostatic excitation capacitance detection, comprising a glass layer, a resonator layer and a sensitive film layer arranged in sequence, wherein the sensitive film layer comprises a pressure sensitive film and two silicon islands fixed on the pressure sensitive film layer; the resonator layer comprises a first movable anchor point and a second movable anchor point respectively connected to the two silicon islands;

[0006] The two sides of one end of the first movable anchor point are respectively connected to the first resonant beam and one end of the fourth resonant beam, the two sides of one end of the second movable anchor point are respectively connected to the second resonant beam and one end of the third resonant beam, the other ends of the first resonant beam and the second resonant beam are connected to the first mass block, and the other ends of the third resonant beam and the fourth resonant beam are connected to the second mass block; the first mass block is connected to the second mass block through a coupling beam; the coupling beam includes four single beams with one end connected to the connection point;

[0007] A first excitation structure is disposed outside the first resonant beam and the second resonant beam, and a first detection structure is disposed outside the first excitation structure; a second excitation structure is disposed outside the third resonant beam and the fourth resonant beam, and a second detection structure is disposed outside the second excitation structure.

[0008] Furthermore, the first excitation structure and the second excitation structure are the same, the first excitation structure includes a first excitation fixed tooth and a second excitation fixed tooth, the first excitation fixed tooth is provided with a first excitation movable tooth on one side, and the other side is connected to the first excitation electrode; the second excitation fixed tooth is provided with a second excitation movable tooth on one side, and the other side is connected to the second excitation electrode.

[0009] Furthermore, the first detection structure is the same as the second detection structure; the first detection structure includes a first detection movable tooth, a first detection fixed tooth is arranged outside the first detection movable tooth, and the first detection fixed tooth is connected to the first detection electrode.

[0010] Furthermore, a shielding electrode frame is provided between the first excitation structure and the first detection structure, and between the second excitation structure and the second detection structure.

[0011] Furthermore, both sides of one end of the first movable anchor point extend outwardly and are suspended, and the suspended parts on both sides are respectively connected to one end of the first resonant beam and the fourth resonant beam; both sides of one end of the second movable anchor point extend outwardly and are suspended, and the suspended parts on both sides are respectively connected to one end of the second resonant beam and the third resonant beam.

[0012] Furthermore, the plane size of the pressure sensitive film is 1500 μm×1500 μm to 2000 μm×2000 μm, and the thickness is 50 μm to 80 μm.

[0013] Furthermore, the lengths of the first resonant beam, the second resonant beam, the third resonant beam and the fourth resonant beam are 400 μm to 600 μm.

[0014] Furthermore, the widths of the first resonant beam, the second resonant beam, the third resonant beam and the fourth resonant beam are 16 μm to 24 μm.

[0015] Furthermore, the silicon island is arranged in a maximum deformation region of the pressure sensitive membrane along the length direction of the resonance beam.

[0016] Furthermore, the glass layer and the resonator layer are packaged by vacuum anodizing bonding.

[0017] Compared with the prior art, the present invention has at least the following beneficial technical effects:

[0018] (1) The silicon resonant pressure sensor based on electrostatic excitation capacitance detection of the present invention has a coupling beam composed of four single beams, and one end of the four single beams is fixedly connected through a connection point, and the other end is respectively connected to two mass blocks to form a four-point contact coupling beam. While satisfying the coupling of the two mass blocks and providing stiffness for the resonator to increase the modal frequency interval, it can also effectively reduce the impact of acceleration shock on the coupling beam structure, thereby ensuring the stability of the sensor operation.

[0019] (2) The electrostatic excitation / capacitive detection structure adopted in the present invention has the advantages of small size, fast response, and low power consumption. It belongs to a non-contact excitation and detection method and can effectively reduce the impact of physical contact on the life of the sensor.

[0020] (3) The present invention adopts a secondary sensitive mechanism of a pressure-sensitive membrane and a resonant beam, that is, through the two stress transmissions between the external pressure and the sensitive membrane, and between the silicon island on the sensitive membrane and the resonant beam, the axial stress is amplified while the direct energy coupling between the vibration direction of the resonant beam and the direction of the external pressure on the sensitive membrane is isolated, thereby improving the quality factor of the sensor and increasing the stability of the sensor operation.

[0021] Furthermore, the design of the shielding electrode frame structure can significantly reduce the coupling capacitance between the excitation structure and the detection structure, and shield certain parasitic capacitances existing in the resonator to ensure the stability of sensor signal detection.

[0022] Furthermore, based on the theoretical research on pressure-sensitive diaphragms and resonant beams, the present invention optimizes the planar size and thickness of the pressure-sensitive membrane, the layout of the silicon island on the sensitive membrane, the length and width of the resonant beam, and adopts a truss structure to reduce the out-of-plane lift height of the resonator. In combination with ANSYS finite element simulation, structural verification and iterative optimization of the above parameters are performed, so that the sensor structure designed by the present invention can maintain good accuracy and stability under external pressure within 2MPa, thereby meeting the application requirements in the field of engineering with relatively large pressures.

[0023] Furthermore, the sensor adopts silicon-glass vacuum anodic bonding packaging, which provides a better excitation and detection environment for the resonator layer.

[0024] Furthermore, the resonator in the present invention has a symmetrical structure, and its vibration mode is parallel reverse vibration. The center of gravity is fixed during the vibration process, and the vibration direction is parallel to the pressure sensitive diaphragm, which can effectively reduce the energy coupling between the external pressure and the resonator, thereby improving the quality factor Q of the sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a cross-sectional schematic diagram of the overall structure of the present invention;

[0026] Figure 2 is a plan view schematically showing the resonator layer structure of the present invention;

[0027] Figure 3 yes Figure 2 A partial enlarged view of the middle serpentine beam 12;

[0028] Figure 4 yes Figure 2 The enlarged schematic diagram of the local structure in the dashed box;

[0029] Figure 5 It is a partial half-section view of the present invention.

[0030] Wherein: 1-glass layer, 2-resonator layer, 3-sensitive film layer, 4-electrode lead hole, 5-pressure sensitive film, 6-silicon island, 7-back cavity, 81-first excitation electrode, 82-second excitation electrode, 83-third excitation electrode, 84-fourth excitation electrode, 91-first detection electrode, 92-second detection electrode, 10-lead electrode, 11-shielding electrode frame, 12-snake beam, 131-first movable anchor point, 132-second movable anchor point, 141-first resonant beam, 142-second resonant beam, 143-third resonant beam, 144-second resonant beam, 145-second resonant beam, 146-second resonant beam, 147-second resonant beam, 148-second resonant beam, 149-second resonant beam, 150-second resonant beam, 151-second resonant beam, 152-second resonant beam, 153-second resonant beam, 154-second resonant beam, 155-second resonant beam, 156-second resonant beam, 157-second resonant beam, 158-second resonant beam, 159-second resonant beam, 160-second resonant beam, 161-second resonant beam, 162-second resonant beam, 163-second resonant beam, 164-second resonant beam, 165-second resonant beam, 166-second resonant beam, 167-second resonant beam, 168-second resonant beam, 169-second resonant beam, 170-second resonant beam, 171-second resonant beam, 172-second resonant beam, 173-second 4-the fourth resonant beam, 151-the first detection fixed tooth, 152-the second detection tooth, 161-the first detection moving tooth, 162-the second detection moving tooth, 171-the first excitation fixed tooth, 172-the second excitation fixed tooth, 173-the third excitation fixed tooth, 174-the fourth excitation fixed tooth, 181-the first excitation moving tooth, 182-the second excitation moving tooth, 183-the third excitation moving tooth, 184-the fourth excitation moving tooth, 191-the first mass block, 192-the second mass block, 20-the coupling beam, 21-the first intermediate connecting beam, 22-the second intermediate connecting beam. DETAILED DESCRIPTION

[0031] In order to make the purpose and technical solution of the present invention clearer and easier to understand, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. The specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0032] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] Reference Figures 1 to 5 A silicon resonant pressure sensor based on electrostatic excitation capacitance detection adopts a secondary sensitive structure composed of a pressure sensitive film and a resonator, wherein the resonator is in-plane parallel reverse vibration. The overall structure of the invention is symmetrical, the principle is clear, the scheme is reasonable, and it is easy to implement.

[0034] A silicon resonant pressure sensor based on electrostatic excitation capacitance detection comprises a glass layer 1, a resonator layer 2 and a sensitive film layer 3 arranged in sequence from top to bottom. The glass layer 1 and the resonator layer 2 are vacuum anodic bonded and packaged. Ten electrode lead holes 4 are opened on the glass layer 1; and a back cavity 7 is opened at the bottom of the glass layer 1.

[0035] The sensitive film layer 3 includes a pressure sensitive film 5 and two silicon islands 6. The two silicon islands 6 are fixed on the pressure sensitive film 5 and are symmetrically arranged about the geometric center of the sensor.

[0036] Reference Figure 2 and Figure 4The resonator layer 2 includes a resonator, a shielding electrode frame 11, and two serpentine beams 12. The resonator includes a first excitation electrode 81, a second excitation electrode 82, a third excitation electrode 83, a fourth excitation electrode 84, a first detection electrode 91, a second detection electrode 92, two lead electrodes 10, a first movable anchor point 131, a second movable anchor point 132, a first resonant beam 141, a second resonant beam 142, a third resonant beam 143, a fourth resonant beam 144, a first detection fixed tooth 151, a second detection fixed tooth 152, a first detection movable tooth 161, a second detection movable tooth 162, a first excitation fixed tooth 171, a second excitation fixed tooth 172, a third excitation fixed tooth 173, a fourth excitation fixed tooth 174, a first excitation movable tooth 181, a second excitation movable tooth 182, a third excitation movable tooth 183, a fourth excitation movable tooth 184, a first mass block 191, a second mass block 192, a coupling beam 20, a first intermediate connecting beam 21, and a second intermediate connecting beam 22.

[0037] The resonator layer 2 is a symmetrical structure, and the upper ends of the two silicon islands 6 are fixedly connected to the first movable anchor point 131 and the second movable anchor point 132 respectively. The first movable anchor point 131 and the second movable anchor point 132 are of the same shape and size. The first movable anchor point 131 is connected to the pressure sensitive film 5 through the silicon island 6. The first movable anchor point 131 is T-shaped, that is, the two sides of one end extend outward and are suspended, and the suspended parts on both sides are respectively connected to one end of the first resonant beam 141 and the fourth resonant beam 144, the other end of the first resonant beam 141 is connected to the first mass block 191, and the other end of the fourth resonant beam 144 is connected to the second mass block 192. The second movable anchor point 132 is connected to the pressure sensitive film 5 through another silicon island 6, and the suspended parts on both sides of the first movable anchor point 132 are respectively connected to one end of the second resonant beam 142 and the third resonant beam 143, the other end of the second resonant beam 142 is connected to the first mass block 191, and the other end of the third resonant beam 143 is connected to the second mass block 192. The first mass block 191 and the second mass block 192 are connected via a coupling beam 20. The coupling beam 20 is composed of four single beams, one end of which is fixedly connected via a connection point, and the other end is respectively connected to the first mass block 191 and the second mass block 192 to form a four-point contact coupling beam.

[0038] The first excitation moving tooth 181, the second excitation moving tooth 182, the third excitation moving tooth 183 and the fourth excitation moving tooth 184 are respectively arranged on the outer sides of the first resonant beam 141, the second resonant beam 142, the third resonant beam 143 and the fourth resonant beam 144; wherein the first excitation moving tooth 181 and the second excitation moving tooth 182 are connected via the first middle connecting beam 21; the third excitation moving tooth 183 and the fourth excitation moving tooth 184 are connected via the second middle connecting beam 22. The first excitation fixed tooth 171 and the first excitation movable tooth 181 are arranged opposite to each other and constitute an electrostatic gear excitation structure, and the first excitation fixed tooth 171 is connected to the first excitation electrode 81; the second excitation fixed tooth 172 and the second excitation movable tooth 182 are arranged opposite to each other and constitute an electrostatic gear excitation structure, and the second excitation fixed tooth 172 is connected to the second excitation electrode 82; the third excitation fixed tooth 173 and the third excitation movable tooth 183 are arranged opposite to each other and constitute an electrostatic gear excitation structure, and the third excitation fixed tooth 173 is connected to the third excitation electrode 83; the fourth excitation fixed tooth 174 and the fourth excitation movable tooth 184 are arranged opposite to each other and constitute an electrostatic gear excitation structure, and the fourth excitation fixed tooth 174 is connected to the fourth excitation electrode 84.

[0039] The first detection movable tooth 161 is connected to the first excitation movable tooth 181 and the second excitation movable tooth 182 through the first middle connecting beam 21; the first detection fixed tooth 151 is arranged opposite to the first detection movable tooth 161 and constitutes an electrostatic tooth insertion detection structure, the first detection fixed tooth 151 is connected to the first detection electrode 91, the second detection fixed tooth 152 is arranged opposite to the second detection movable tooth 162 and constitutes an electrostatic tooth insertion detection structure, and the second detection fixed tooth 152 is connected to the second detection electrode 92.

[0040] Reference Figure 3 The extended part of the shielding electrode outer frame 11 isolates and shields each excitation fixed tooth and each detection movable tooth. The first movable anchor point 131 and the second movable anchor point 132 are respectively connected to the two lead electrodes 10 through two serpentine beams 12; the first excitation electrode 81, the second excitation electrode 82, the third excitation electrode 83, the fourth excitation electrode 84, the first detection electrode 91, the second detection electrode 92 and the two lead electrodes 10 are respectively in contact with the electrode lead holes 4 above them, and the sensor is subsequently excited and the signal is detected by electrode leads. The remaining two lead holes 4 are grounded, and the voltage of the shielding electrode outer frame 11 is set to 0, so as to realize the capacitive shielding between the sensor excitation and detection electrodes.

[0041] In this sensor, in order to reduce the energy coupling between the pressure sensitive membrane 5 and the resonator, the planar size and thickness of the pressure sensitive membrane 5 should satisfy a large interval between its modal frequency and the resonator frequency. Therefore, the planar size of the pressure sensitive membrane 5 is between 1500μm×1500μm and 2000μm×2000μm, and the thickness of the pressure sensitive membrane 5 is between 50μm and 80μm.

[0042] In a preferred embodiment of the present invention, through ANSYS simulation iterative optimization, the plane size of the preferred sensor pressure sensitive membrane 5 is 1600μm×1600μm, and the thickness of the pressure sensitive membrane 5 is 70μm; the silicon island 6 is arranged in the maximum deformation area of ​​the pressure sensitive membrane 5 along the length direction of the resonance beam, that is, with the geometric center of the pressure sensitive membrane 5 as the origin, the silicon island is arranged at 0.6 times the half length of the sensitive membrane.

[0043] In order to ensure the linearity of the resonance beam, the length and width of the resonance beam need to be optimized. Therefore, the length and width of the four resonance beams are the same, the length of the resonance beam should be between 400μm and 600μm, and the width of the resonance beam should be between 16μm and 24μm. In the preferred embodiment of the present invention, through ANSYS simulation iterative optimization, the length of the first resonance beam 141, the second resonance beam 142, the third resonance beam 143, and the fourth resonance beam 144 are 500μm and 20μm in width; the coupling beam 20 couples the vibrations of the two mass blocks, the four resonance beams, the four excitation moving teeth, and the two detection moving teeth together to ensure that the frequencies of the four resonance beams are the same to ensure the stability of the vibration process. In addition, due to the coupling effect of the coupling beam 20, the sensor will not undergo large torsional deformation when it is impacted by acceleration in all directions, which is beneficial to improve the stability of the sensor under acceleration impact. The first resonant beam 141, the second resonant beam 142, the third resonant beam 143 and the fourth resonant beam 144 are respectively connected to the extended suspension parts of the two movable anchor points to form a truss structure, which can effectively reduce the out-of-plane lifting height of the resonator, which is beneficial to the excitation of the resonator. The shielding electrode outer frame 11 is used to shield and isolate the four excitation fixed teeth and the two detection moving teeth through structural extension, which is beneficial to the capacitance signal detection of the sensor.

[0044] The technical indicators that can be achieved by the preferred embodiments of the present invention are as follows:

[0045] 1) Pressure range: 0-2MPa;

[0046] 2) Measurement accuracy: 0.02%;

[0047] 3) Response time: ≤100ms;

[0048] 4) Overvoltage protection: 150% FS;

[0049] 5) Operating temperature range: -50℃-125℃;

[0050] 6) Acceleration shock resistance range: 0-50g.

[0051] The working process of the present invention is:

[0052] Reference Figure 1When external pressure acts on the pressure sensitive membrane 5 and causes it to deform, the deformation will be transmitted to the resonant beam through the silicon island 6 and the movable anchor point, causing the internal stress of the resonant beam to change, thereby changing the natural frequency of the resonant beam. By detecting the magnitude of the resonant frequency and the frequency-pressure linear relationship, the magnitude of the pressure applied to the pressure sensitive membrane 5 can be measured.

[0053] The silicon resonant pressure sensor based on electrostatic excitation capacitance detection provided by the present invention adopts a symmetrical working mode. An excitation moving tooth and a detection moving tooth are arranged outside the connection between the mass block and the resonant beam, and an excitation fixed tooth and a detection fixed tooth are arranged opposite to them. An AC + DC voltage is passed through the excitation fixed tooth to generate an alternating driving force between the excitation electrodes, thereby causing the resonant beam to vibrate. When the frequency of the driving force reaches the resonant frequency of the resonant beam, the resonator resonates, and at this time, the capacitance value signal between the detection moving tooth and the detection fixed tooth will change periodically. The capacitance value signal with periodic changes is led out and processed by the detection electrode to complete the detection of the resonant frequency and the measurement of the external pressure.

[0054] The above is only one embodiment of the present invention, not all or the only embodiment. Any equivalent changes made to the technical solution of the present invention by ordinary technicians in this field after reading the specification of the present invention are covered by the claims of the present invention.

Claims

1. A silicon resonant pressure sensor based on electrostatic excitation capacitance detection, characterized in that: The invention comprises a glass layer (1), a resonator layer (2) and a sensitive film layer (3) which are arranged in sequence, wherein the sensitive film layer (3) comprises a pressure sensitive film (5) and two silicon islands (6) fixed on the pressure sensitive film (5) layer; the resonator layer (2) comprises a first movable anchor point (131) and a second movable anchor point (132) which are respectively connected to the two silicon islands (6); The two sides of one end of the first movable anchor point (131) are respectively connected to the first resonant beam (141) and one end of the fourth resonant beam (144); the two sides of one end of the second movable anchor point (132) are respectively connected to the second resonant beam (142) and one end of the third resonant beam (143); the other ends of the first resonant beam (141) and the second resonant beam (142) are connected to the first mass block (191); the other ends of the third resonant beam (143) and the fourth resonant beam (144) are connected to the second mass block (192); the first mass block (191) and the second mass block (192) are connected via a coupling beam (20); the coupling beam (20) comprises four single beams, one end of which is connected to a connection point; A first excitation structure is arranged outside the first resonant beam (141) and the second resonant beam (142), and a first detection structure is arranged outside the first excitation structure; a second excitation structure is arranged outside the third resonant beam (143) and the fourth resonant beam (144), and a second detection structure is arranged outside the second excitation structure; The first excitation structure and the second excitation structure are the same, the first excitation structure comprising a first excitation fixed tooth (171) and a second excitation fixed tooth (172), one side of the first excitation fixed tooth (171) being provided with a first excitation movable tooth (181), and the other side being connected to the first excitation electrode (81); one side of the second excitation fixed tooth (172) being provided with a second excitation movable tooth (182), and the other side being connected to the second excitation electrode (82); The first detection structure and the second detection structure are the same; the first detection structure comprises a first detection movable tooth (161), a first detection fixed tooth (151) is arranged outside the first detection movable tooth (161), and the first detection fixed tooth (151) is connected to a first detection electrode (91); The two sides of one end of the first movable anchor point (131) extend outwards and are suspended, and the suspended parts on the two sides are respectively connected to one end of the first resonant beam (141) and the fourth resonant beam (144); the two sides of one end of the second movable anchor point (132) extend outwards and are suspended, and the suspended parts on the two sides are respectively connected to one end of the second resonant beam (142) and the third resonant beam (143).

2. The silicon resonant pressure sensor based on electrostatic excitation capacitance detection according to claim 1 is characterized in that: A shielding electrode outer frame (11) is provided between the first excitation structure and the first detection structure, and between the second excitation structure and the second detection structure.

3. The silicon resonant pressure sensor based on electrostatic excitation capacitance detection according to claim 1 is characterized in that: The plane size of the pressure sensitive film (5) is 1500 μm×1500 μm to 2000 μm×2000 μm, and the thickness is 50 μm to 80 μm.

4. The silicon resonant pressure sensor based on electrostatic excitation capacitance detection according to claim 1 is characterized in that: The lengths of the first resonance beam (141), the second resonance beam (142), the third resonance beam (143) and the fourth resonance beam (144) are 400 μm to 600 μm.

5. A silicon resonant pressure sensor based on electrostatic excitation capacitance detection according to claim 1 or 4, characterized in that: The widths of the first resonance beam (141), the second resonance beam (142), the third resonance beam (143) and the fourth resonance beam (144) are 16 μm to 24 μm.

6. The silicon resonant pressure sensor based on electrostatic excitation capacitance detection according to claim 1, characterized in that: The silicon island (6) is arranged in the maximum deformation area of ​​the pressure sensitive membrane (5) along the length direction of the resonance beam.

7. The silicon resonant pressure sensor based on electrostatic excitation capacitance detection according to claim 1 is characterized in that: The glass layer (1) and the resonator layer (2) are packaged by vacuum anodic bonding.

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