A half-mode SSPPs substrate integrated waveguide filter and satellite communication integrated circuit

Abstract

The application discloses a half-mode SSPPs substrate integrated waveguide filter and a satellite communication integrated circuit. The half-mode SSPPs substrate integrated waveguide filter comprises a dielectric substrate and a metal patch; the metal patch comprises a rectangular area and a strip area connected to two sides of the rectangular area; a plurality of slot units are arranged on a lower side of the rectangular area and periodically arranged along edges of the half-mode length direction as artificial surface plasmon transmission devices; wherein each slot unit has a meander-shaped slot. The application provides a new solution for effective constraint and propagation of high-order modes of SSPPs by using the meander-shaped slot arranged periodically to form a meander-shaped SSPPs structure. Meanwhile, the structure is embedded into a substrate integrated waveguide to form a band-pass filter response, compared with a traditional SSPPs substrate integrated waveguide structure, a larger high-frequency cutoff frequency adjustment range can be realized, and compared with a basic mode, the band-pass filter response has a wider bandwidth.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of filter, more particularly, to a half-mode SSPPs substrate integrated waveguide filter and a satellite communication integrated circuit. BACKGROUND

[0002] Surface plasmon is an energy propagation phenomenon that originally only exists in the optical frequency band. Until 2004, in order to simulate the surface plasmon in the optical band in the microwave and millimeter wave band, Sir Pendry of Imperial College London and his colleagues designed an artificial periodic medium hole array structure on the metal surface, effectively reduced the plasmon frequency of the artificial metal surface, and thus constructed the spoof surface plasmon polaritons (SSPPs) in the microwave and millimeter wave band. SSPPs have the following advantages: first, since the structured surface plasmon frequency is much lower than the plasmon frequency of the metal itself, it has smaller loss; second, the dispersion characteristics of SSPPs can be flexibly controlled by changing the structural parameters of the metal surface, thereby obtaining adjustable, reconfigurable, intelligent circuits, devices or antennas. Using the above advantages, various devices based on the characteristics of SSPPs covering the microwave band and the terahertz band have been researched and reported, including SSPPs filter, SSPPs antenna, SSPPs power divider, etc.

[0003] Some researchers have realized the bandpass filtering function by combining the low-pass characteristics of SSPPs and the high-pass characteristics of substrate integrated waveguide. For example, Chinese invention patent CN109149031A discloses a bandpass filter based on half-mode substrate integrated waveguide and artificial surface plasmon, which includes a dielectric substrate, the dielectric substrate has a rectangular metal coating in the middle of both sides, and has a trapezoidal metal coating and a microstrip line at both ends, the upper side of the dielectric substrate covered with the rectangular metal coating has a row of metal through holes, which constitutes a half-mode substrate integrated waveguide. The lower side of the rectangular metal coating has a periodic groove, which constitutes an artificial surface plasmon transmission device, and the periodic unit structure under the full mode is shown as Structure A in Figure 1 The trapezoidal metal coating is a conversion structure of microstrip line-half-mode substrate integrated waveguide.

[0004] Compared with the previous substrate integrated waveguide bandpass filter, this method can independently adjust the high-frequency and low-frequency cutoff frequencies of the bandpass response, simplifying the design process of the ultra-wideband filter. However, the traditional structure still has the following problems:

[0005] 1. Although the high order mode of the SSPPs can support wider bandwidth compared with the base mode, the high order mode radiation is caused due to the dispersion curve of the high order mode of the traditional structure being closer to the dispersion curve of the Lightline, so the traditional general structure cannot constrain and effectively propagate the high order mode energy;

[0006] 2. The base mode of the SSPP transmission line of the same size has higher loss than the transmission mode of the traditional microstrip transmission line, and the high order mode of the SSPP has higher loss than the base mode. SUMMARY

[0007] Therefore, it is necessary to provide a half-mode SSPPs substrate integrated waveguide filter and a satellite communication integrated circuit in view of the above technical problems.

[0008] In order to solve the above technical problems, the technical scheme is as follows:

[0009] A half-mode SSPPs substrate integrated waveguide filter comprises a dielectric substrate and a metal patch formed on one side surface of the dielectric substrate; the metal patch comprises a rectangular area and a strip area connected on both sides of the rectangular area; a plurality of slot units are arranged on the lower edge of the rectangular area and arranged periodically along the edge of the half-mode length direction as an artificial surface plasmon transmitter; wherein each slot unit has a meandering slot.

[0010] In the present application, the meandering slot has a slot opening segment and a slot extension segment connected with each other, and the slot extension segment is an open ring-shaped slot.

[0011] In the present application, the open ring-shaped slot is formed along the rectangular shape.

[0012] In the present application, the slot opening segment is a rectangular slot.

[0013] In the present application, in the top view state, the meandering slot has a shape of .

[0014] In the present application, the length L1 of each slot unit is 2.8-3.2mm, and the width W1 is 0.8-1.2mm; the slot width W2 of the meandering slot is 0.08-0.12mm, and the slot length L2 is more than 3.5mm.

[0015] In the present application, the half-mode SSPPs substrate integrated waveguide filter further comprises a ground metal layer formed on the other side surface of the dielectric substrate.

[0016] In the present application, the forming material of the metal patch is a high-temperature superconducting material.

[0017] In the application, the bandwidth of the filter is 50-80 GHz.

[0018] A satellite communication integrated circuit has the above-mentioned half-mode SSPPs substrate integrated waveguide filter.

[0019] Compared with the prior art, the application has the following beneficial effects:

[0020] In the application, the edges of the plurality of slot units along the half-mode length direction are periodically arranged as artificial surface plasmon transmission devices; each slot unit has a meandering slot. That is, the application forms a meandering SSPPs structure by periodically arranging meandering slots, and provides a new solution for effective constraint and propagation of SSPPs high-order modes. Meanwhile, the structure is embedded into a substrate integrated waveguide to form a bandpass filter response. Compared with a traditional SSPPs substrate integrated waveguide structure, a greater high-frequency cutoff frequency adjustment range can be realized, and the bandwidth is wider than that of a basic mode. The application combines the SSPP high-order mode field distribution characteristics with the half-mode substrate integrated waveguide theory, and proposes a half-mode SSPPs substrate integrated waveguide filter structure, which reduces the circuit area by 50%. Compared with a traditional half-mode SSPPs substrate integrated waveguide filter structure, the half-mode edge of the application can be closer to other structures, which saves the overall design area of the integrated circuit. The introduction of high-temperature superconducting material makes the SSPP high-order mode transmission loss lower.

[0021] Since the frequency response of the half-mode substrate integrated waveguide is a high-pass response, and the high-pass cutoff frequency thereof can be adjusted and controlled by the waveguide width of the half-mode substrate integrated waveguide, and the frequency response of the meandering SSPPs is a low-pass response, and the low-pass cutoff frequency thereof can be controlled by adjusting the effective length of the meandering slot, the application can realize a bandpass filter response.

[0022] The dispersion curve of the meandering SSPPs structure proposed in the application is shown in Figure 3 Compared with a traditional structure, the high-order mode dispersion curve is farther away from the lightline dispersion curve, which solves the defect that the traditional structure cannot effectively constrain and propagate high-order modes, thereby expanding the bandwidth of the SSPPs substrate integrated waveguide filter. This is the first application of the high-order mode characteristics of SSPPs in the field of substrate integrated waveguides.

[0023] In order to solve the problem of high transmission loss of SSPP high-order modes, the application uses high-temperature superconducting material to process a half-mode substrate integrated waveguide layout. The high-temperature superconducting material is directly coated on a dielectric substrate by a magnetron sputtering method. A laser refrigeration device is placed below the filter structure to cool the whole filter to a superconducting state, thereby realizing lower loss of electrical signals. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to make the scheme of the present application or the prior art clearer, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings described below are only some embodiments of the present application, and all other drawings obtained by those of ordinary skill in the art without creative work should belong to the protection scope of the present application.

[0025] Figure 1 Structure A for the periodic unit structure under the traditional structure;

[0026] Figure 2 Structure A for the periodic unit structure under the traditional structure;

[0027] Figure 3 Structure A for the periodic unit structure under the traditional structure;

[0028] Figure 4 Structure A for the periodic unit structure under the traditional structure; Figure 3 Structure B for the periodic unit structure;

[0029] Figure 5 Structure A, Structure B for the dispersion curve of the periodic unit structure, wherein the abscissa represents the transmission frequency, and the ordinate represents the dispersion, wherein mode1, mode2 are different electromagnetic field modes applied;

[0030] Figure 6 TE10 mode field distribution of the substrate integrated waveguide of the present application (solid line is the electric field line, and dotted line is the magnetic field line);

[0031] Figure 7 Frequency response simulation results of the semi-mode SSPPs substrate integrated waveguide filter of the present application. DETAILED DESCRIPTION

[0032] In order to make the scheme of the present application or the prior art clearer, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings described below are only some embodiments of the present application, and all other drawings obtained by those of ordinary skill in the art without creative work should belong to the protection scope of the present application.

[0033] Please refer to Figure 2 which shows a semi-mode SSPPs substrate integrated waveguide filter, which comprises:

[0034] A dielectric substrate 1;

[0035] A metal patch 2 formed on one side surface of the dielectric substrate 1;

[0036] a ground metal layer formed on the other side surface of the dielectric substrate 1;

[0037] wherein the metal patch 2 comprises:

[0038] a rectangular region 3, a plurality of slot units 31 are arranged on the lower edge of the rectangular region 3, each of the slot units 31 has a meander-shaped slot 311; the plurality of slot units 31 are periodically arranged along the edge of the half-mode length as artificial surface plasmon polariton (i.e. meander-shaped SSPPs);

[0039] two strip regions 4, which are respectively connected to the two sides of the rectangular region 3 as microstrip waveguides.

[0040] Further, the meander-shaped slot 311 has a slot opening segment 3111 and a slot extension segment 3112 connected to each other. The slot opening segment 3111 is located on the lower edge of the rectangular region 3, and preferably, the slot opening segment 3111 is a rectangular slit, which can be understood as being perpendicular to the half-mode edge. The slot extension segment 3112 is an open ring-shaped slit, which in some embodiments is formed along the rectangular shape. In a top view, the meander-shaped slot 311 has a shape of “ ” in a specific implementation.

[0041] In the present application, the length L1 of each slot unit 31 is 2.8-3.2 mm, and the width W1 is 0.8-1.2 mm; the slot width W2 of the meander-shaped slot 311 is 0.08-0.12 mm. Preferably, the slot length L2 is greater than 3.5 mm, and more preferably 3.5-4.5 mm, but is not limited thereto. The frequency response of the meander-shaped SSPPs is a low-pass response, and the low-pass cutoff frequency can be controlled by adjusting the effective length of the slot of the meander-shaped slot 311, thereby achieving a band-pass filtering response and a greater low-frequency cutoff frequency adjustment range.

[0042] Preferably but not limitedly, the relative dielectric constant of the dielectric substrate 1 is 2.5-2.7, such as 2.65, the thickness is 0.4-0.6 mm, such as 0.5 mm, and the loss tangent is 0.002-0.004, such as 0.003. However, it can be understood that the dielectric substrate 1 is not limited thereto.

[0043] In order to solve the problem of high transmission loss of high-order modes of SSPPs, the forming material of the metal patch 2 in the present application adopts high-temperature superconducting material. In a specific implementation, the high-temperature superconducting material is directly plated on the dielectric substrate 1 by a deposition method such as magnetron sputtering. A laser refrigeration device is placed below the filter structure to cool the entire filter to a superconducting state, thereby achieving the purpose of lower loss of electrical signals.

[0044] A satellite communication integrated circuit has the above-mentioned half-mode SSPPs substrate integrated waveguide filter. The application uses a high-temperature superconducting on-chip integrated filter based on a substrate integrated waveguide with the propagation characteristics of a meander-shaped SSPPs high-order mode, which is particularly suitable for a satellite communication mirror frequency suppression filter. By combining the SSPPs high-order mode field distribution characteristics with the theory of a half-mode substrate integrated waveguide, not only is a half-mode SSPPs substrate integrated waveguide filter structure proposed, which reduces the circuit area by 50%, but compared with a traditional half-mode substrate integrated waveguide filter structure, the half-mode edge of the half-mode SSPPs substrate integrated waveguide filter can be closer to other structures (including but not limited to amplifiers, filters, mixers, etc.), the device spacing is closer, but the probability of mutual interference is lower after the half-mode SSPPs substrate integrated waveguide filter is used, which saves the overall design area of the integrated circuit. Furthermore, the introduction of high-temperature superconducting material makes the transmission loss of the SSPP high-order mode lower.

[0045] In order for those skilled in the art to better understand the scheme of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings. Embodiments

[0046] Please refer to Figure 2 、 4 which shows a half-mode SSPPs substrate integrated waveguide filter, which comprises:

[0047] a dielectric substrate 1;

[0048] a metal patch 2 formed on one side surface of the dielectric substrate 1, the forming material of the metal patch 2 being a high-temperature superconducting material;

[0049] a ground metal layer (not shown in the figure) formed on the other side surface of the dielectric substrate 1;

[0050] wherein the metal patch 2 comprises:

[0051] a rectangular area 3 with a plurality of slot units 31 opened on one side of the lower edge, each slot unit 31 having a meander-shaped slot 311; the plurality of slot units 31 are periodically arranged along the edge of the half-mode length direction as an artificial surface plasmon transmission (i.e. meander-shaped SSPPs);

[0052] two strip areas 4 connected to the two sides of the rectangular area 3 respectively as microstrip waveguides.

[0053] The meander-shaped slot 311 has slot opening sections 3111 and slot extension sections 3112 connected to each other, the slot opening sections 3111 are rectangular slits, and the slot extension sections 3112 are open ring-shaped slits formed along the rectangular shape. Figure 4 As shown in the figure, the length L1 of each slot unit 31 is 3 mm, and the width W1 is 0.9 mm; the slot gap width W2 of the meander-shaped slot 311 is 0.1 mm, and the slot gap length L2 is 3 mm. Under the full template map, the distance W0 between the upper and lower opposite slot units 31 is 0.2 mm.

[0054] The transition zone 5 is further connected between the strip-shaped zone 4 and the rectangular zone 3, and is used for impedance matching.

[0055] The design process of the half-mode SSPPs substrate integrated waveguide filter of the application is as follows: first, a full-mode substrate integrated waveguide is designed according to the design requirements, and then the meander-shaped SSPPs periodic unit structure (as shown in the figure) is embedded to obtain a full-mode version design of the half-mode SSPPs substrate integrated waveguide filter (as shown in the figure). Figure 4 Figure 3 The full-mode structure embedded with the SSPPs is cut along the transverse symmetry line, leaving half of the design, and the impedance matching is simulated and calculated to obtain the final half-mode design; finally, a metal patch 2 is plated on a pure dielectric substrate 1 according to the layout of the final half-mode design by using a magnetron sputtering method and using a high-temperature superconducting material.

[0056] Please refer to Figure 5 , which is the dispersion curve of the traditional structure and the meander-shaped SSPPs periodic slot unit structure proposed by the application, wherein the abscissa represents the transmission frequency, and the ordinate represents the dispersion. It can be seen that compared with the traditional structure, the high-order mode dispersion curve of the slot unit 31 structure is farther away from the light line, which solves the disadvantage that the traditional structure cannot effectively constrain and propagate high-order modes, thereby expanding the bandwidth of the SSPPs substrate integrated waveguide filter.

[0057] Please refer to Figure 6 , which is the TE10 mode field distribution of the substrate integrated waveguide of the application (the solid line is the electric field line, and the dotted line is the magnetic field line).

[0058] Please refer to Figure 7 , which is the frequency response simulation result of the half-mode SSPPs substrate integrated waveguide filter embodiment proposed by the application. It can be seen that the frequency response of the embodiment is a bandpass response, and the 3dB passband range (S11<-10dB, S21>-3dB) of the designed bandpass filter is 50-80 GHz.

[0059] ​In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship shown in the drawings, which are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0060] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0061] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected or communicate with each other; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0062] Obviously, the above-described embodiments are only part of the embodiments of the present application, and not all embodiments. The preferred embodiments of the present application are shown in the drawings, but do not limit the patent scope of the present application. The present application can be implemented in many different forms, and conversely, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments, or make equivalent replacements to some technical features. Any equivalent structure made by using the contents of the present application specification and drawings, directly or indirectly applied to other related technical fields, is also within the scope of the present patent protection.

Claims

1. A half-mode SSPPs substrate integrated waveguide filter, characterized in that: It includes: A dielectric substrate and a metal patch formed on one surface of the dielectric substrate; the metal patch includes a rectangular region and strip regions connecting two sides of the rectangular region; a plurality of slot units are defined below the rectangular region, and the slot units are periodically arranged along the edges of the half-mold length direction to form an artificial surface plasmon transmitter; each slot unit has a serpentine slot; and the slot length L2 of the serpentine slot is 3.5 to 4.5 mm. The serpentine groove comprises a groove opening section and a groove extension section connected to each other, and the groove extension section is an open annular seam; The open annular seam is formed by extending along a rectangular shape; The slot opening section is a rectangular slot.

2. The half-mode SSPPs substrate integrated waveguide filter according to claim 1, characterized in that: The length L1 of each of the groove units is 2.8-3.2 mm, and the width W1 is 0.8-1.2 mm; the groove width W2 of the serpentine groove is 0.08-0.12 mm, and the groove length L2 is greater than 3.5 mm.

3. The half-mode SSPPs substrate integrated waveguide filter according to claim 1, characterized in that: The half-mode SSPPs substrate integrated waveguide filter further includes a grounding metal layer formed on the other side surface of the dielectric substrate.

4. The half-mode SSPPs substrate integrated waveguide filter according to any one of claims 1 to 3, characterized in that: The metal patch is formed of a high-temperature superconducting material.

5. The half-mode SSPPs substrate integrated waveguide filter according to claim 1, characterized in that: The bandwidth of the filter is 50-80 GHz.

6. A satellite communication integrated circuit, characterized in that: The invention comprises a half-mode SSPPs substrate integrated waveguide filter as claimed in any one of claims 1 to 5.

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