Manufacturing method of semiconductor device with slope structure and semiconductor structure

Abstract

The embodiment of the present application relates to a method for manufacturing a semiconductor device with a slope structure and a semiconductor structure, wherein the method includes: providing a substrate including a device area and a test area; forming a functional structure layer on the device area and the test area; forming a sacrificial layer on the functional structure layer; synchronously etching the portion of the sacrificial layer located in the device area and the portion located in the test area to form a first groove in the device area and a second groove in the test area; the bottom of the sidewalls of the first groove and the second groove have an inclination angle greater than 90 degrees with the upper surface of the functional structure layer, so that the sacrificial layer forms a slope structure at the corresponding position; and obtaining the geometric dimension parameters of the slope structure by optically measuring multiple repeated structures. In this way, the problem that the geometric dimension parameters of the slope structure in the device area are difficult to measure is solved, and the measurement is simple, fast, and highly accurate, providing an important basis for judging whether the process continues and evaluating the performance of the semiconductor device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a method for manufacturing a semiconductor device with a slope structure and a semiconductor structure. Background Art

[0002] In the manufacture of semiconductor devices, it is crucial to ensure that the actual geometric size parameters of each part obtained by manufacturing meet the design requirements, which is crucial for whether the final semiconductor device can work and the performance. Taking the MEMS (Micro ElectroMechanical System) sensor as an example, two substrates (i.e., an upper electrode plate and a lower electrode plate) are formed on a substrate, and a cavity is formed between the two substrates, so as to utilize the capacitance change between the two substrates caused by the vibration in the cavity to realize the conversion of motion signals to electrical signals. A support structure needs to be formed between the two substrates to ensure the existence of the cavity. In the related art, the side walls of the support structure are designed to be non-steep, thereby reducing the stress concentration problem and improving the strength of the upper electrode plate.

[0003] However, in order to achieve better results, the angle between the side wall of the support structure and the lower electrode plate needs to meet a certain angle range. How to simply, quickly and accurately measure the specific angle value of the angle and determine whether it falls within the designed angle range is a technical problem that technicians in this field need to solve urgently. Summary of the invention

[0004] In view of this, embodiments of the present application provide a method for manufacturing a semiconductor device with a slope structure and a semiconductor structure to solve at least one problem existing in the background technology.

[0005] To achieve the above purpose, the technical solution of this application is implemented as follows:

[0006] In a first aspect, a method for manufacturing a semiconductor device having a slope structure is provided in this embodiment, the method comprising:

[0007] Providing a substrate, the substrate comprising at least one device area and at least one test area;

[0008] forming a functional structure layer on the device area and the test area;

[0009] forming a sacrificial layer on the functional structure layer;

[0010] The portion of the sacrificial layer located in the device area and the portion located in the test area are etched synchronously to form a first groove in the device area and a second groove in the test area; wherein the first groove is used to fill the support structure; the number of the second grooves located in at least one of the test areas is multiple, and the multiple second grooves divide the portion of the sacrificial layer located in the test area into multiple repeated structures; the bottom of the sidewalls of the first groove and the second groove have an inclination angle greater than 90 degrees with the upper surface of the functional structure layer, so that the sacrificial layer forms a slope structure at the corresponding position;

[0011] The geometrical dimension parameters of the slope structure are obtained by optically measuring the multiple repeated structures.

[0012] Optionally, the number of the repeated structures located in at least one of the test areas is greater than or equal to 4.

[0013] Optionally, the spacing between two adjacent repeating structures is in the range of 2 microns to 15 microns; and the bottom line width of each repeating structure is in the range of 2 microns to 15 microns.

[0014] Optionally, obtaining the geometrical dimension parameters of the slope structure by optically measuring the multiple repeated structures includes:

[0015] The angle of the slope structure is obtained by optically measuring the multiple repeated structures; the sum of the angle of the slope structure and the tilt angle is equal to 180 degrees.

[0016] Optionally, the method further includes:

[0017] Determine whether the angle of the slope structure belongs to a preset angle range; if the determination result is yes, execute the subsequent process.

[0018] Optionally, the preset angle range is 20 degrees to 45 degrees.

[0019] Optionally, the performing of subsequent processes includes:

[0020] filling the support structure in the first groove;

[0021] The sacrificial layer is removed to form a cavity at the location of the sacrificial layer.

[0022] In a second aspect, a semiconductor structure is provided in this embodiment, including:

[0023] A substrate, comprising at least one device area and at least one test area;

[0024] A functional structure layer is formed on the device area and the test area;

[0025] A support structure is formed on the functional structure layer, wherein a cavity having a first angle is formed between the bottom of the side wall of the support structure and the upper surface of the functional structure layer, and the first angle is less than 90 degrees;

[0026] A plurality of repeating units are located in at least one of the test areas, and the repeating units are arranged in parallel. A second angle is formed between the bottom of the two side walls of each repeating unit and the upper surface of the functional structure layer along the arrangement direction, and the second angle is equal to the first angle.

[0027] Optionally, the number of the repeating units located in at least one of the test areas is greater than or equal to 4.

[0028] Optionally, the spacing between two adjacent repeating units is in the range of 2 microns to 15 microns; and the bottom line width of each repeating unit is in the range of 2 microns to 15 microns.

[0029] The manufacturing method and semiconductor structure of a semiconductor device with a slope structure provided by the embodiment of the present application, wherein the method comprises: providing a substrate, the substrate comprising at least one device area and at least one test area; forming a functional structure layer on the device area and the test area; forming a sacrificial layer on the functional structure layer; etching the part of the sacrificial layer located in the device area and the part located in the test area simultaneously, so as to form a first groove in the device area and a second groove in the test area; wherein the first groove is used to fill the support structure; the number of the second grooves located in the at least one test area is multiple, and the multiple second grooves divide the part of the sacrificial layer located in the test area into multiple repeated structures; the bottom of the sidewall of the first groove and the second groove has an inclination angle greater than 90 degrees with the upper surface of the functional structure layer, so that the sacrificial layer forms a slope structure at the corresponding position; and the geometric dimension parameters of the slope structure are obtained by optically measuring the multiple repeated structures. In this way, the problem that the geometric dimension parameters of the slope structure in the device area are difficult to measure is solved, and the measurement is simple, fast and accurate, which provides an important basis for judging whether the process continues and evaluating the performance of the semiconductor device.

[0030] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0032] Figure 1A schematic diagram of the cross-sectional structure of a MEMS sensor during the preparation process;

[0033] Figure 2 A schematic flow chart of a method for manufacturing a semiconductor device with a slope structure provided in an embodiment of the present application;

[0034] Figures 3 to 6 A schematic cross-sectional view of the structure of a semiconductor device with a slope structure during the manufacturing process provided by an embodiment of the present application;

[0035] Figure 7 This is a schematic top view of a test area in one embodiment of the present application;

[0036] Figure 8 This is a schematic top view of a test area in another embodiment of the present application;

[0037] Fig. 9 Schematic diagram of the beam propagation path used in optical measurement of repetitive structures using the machine. DETAILED DESCRIPTION

[0038] The exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope disclosed in the present application to those skilled in the art.

[0039] In the following description, a large number of specific details are given to provide a more thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features known in the art are not described; that is, all features of the actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0040] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0041] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not indicate that the present application necessarily has the first element, component, region, layer or part.

[0042] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0043] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present application. When used herein, the singular forms of "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. The meaning of "multiple" is more than two, unless otherwise clearly and specifically limited. It should also be understood that the terms "compose" and / or "comprise", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0044] In order to thoroughly understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0045] Figure 1 The schematic diagram of the cross-sectional structure of a MEMS sensor during the preparation process is shown. As shown in the figure, the side wall 1301 of the sacrificial layer 130 is not vertically connected to the upper surface 1201 of the functional structure layer 120 (due to layout reasons, the sacrificial layer 130 is not fully shown in the figure, so the left side of 130 in the figure is its side wall, and the right side is not its side wall), and the sacrificial layer 130 has a slope structure 131, so that an angle is formed between the side wall 1301 of the sacrificial layer 130 and the upper surface 1201 of the functional structure layer 120. If the slope structure 131 is measured directly, in order to obtain the angle θ of the angle, it is necessary to measure the film thickness a of the sacrificial layer 130 at the position of the slope structure 131, and the projection width c of the slope structure 131; and then calculate the angle by the following trigonometric formula: θ = arctan a / c. Here, the projection width c refers to the width of the positive projection of the slope structure 131 on the upper surface of the functional structure layer 120.

[0046] However, this method has a cumbersome measurement process. The film thickness a and the projection width c need to be collected multiple times using different machines, which takes up a lot of resources. When measuring the projection width c of the slope structure 131, the inner boundary is difficult to capture, which easily leads to large errors. A set of data processing operations needs to be established, and the data processing process is long.

[0047] Based on this, the embodiment of the present application first provides a method for manufacturing a semiconductor device with a slope structure that is easy to measure, fast, and highly accurate. In the manufacturing method, certain measurement steps are used to obtain the geometric size parameters of the slope structure, thereby providing an important basis for determining whether to continue the process and evaluating the performance of the semiconductor device. Among them, the semiconductor device can be a MEMS sensor, such as a MEMS microphone, etc.; of course, it can be understood that the semiconductor device can also be any other semiconductor device with a slope structure and the geometric size parameters of the slope structure need to be known.

[0048] Please refer to Figure 2 , a method for manufacturing a semiconductor device with a slope structure provided in an embodiment of the present application includes:

[0049] Step S01, providing a substrate, wherein the substrate includes at least one device area and at least one test area;

[0050] Step S02, forming a functional structure layer on the device area and the test area;

[0051] Step S03, forming a sacrificial layer on the functional structure layer;

[0052] Step S04, etching the portion of the sacrificial layer located in the device area and the portion located in the test area simultaneously to form a first groove in the device area and a second groove in the test area; wherein the first groove is used to fill the support structure; the number of the second grooves located in at least one test area is multiple, and the multiple second grooves divide the portion of the sacrificial layer located in the test area into multiple repeated structures; the bottom of the sidewalls of the first groove and the second groove have an inclination angle greater than 90 degrees with the upper surface of the functional structure layer, so that the sacrificial layer forms a slope structure at the corresponding position;

[0053] Step S05, obtaining geometrical dimension parameters of the slope structure by optically measuring the multiple repeated structures.

[0054] Next, we will take the structure of MEMS microphone as an example and combine it with Figures 3 to 6 The manufacturing method of the semiconductor device with the slope structure in this embodiment is further explained.

[0055] First, please refer to Figure 3 . Provide a substrate 100. The substrate 100 can be any carrier on which subsequent material layers are added. For example, the substrate 100 can be a silicon (Si) substrate, a germanium (Ge) substrate, a compound semiconductor material substrate, a silicon-on-insulator (SOI) substrate, or a germanium-on-insulator (GeOI) substrate, etc. In a specific application, the substrate 100 is a silicon wafer. The substrate 100 includes a device area and a test area. It can be understood that the device area refers to an area used to form semiconductor devices; the test area refers to an area where a test unit is added to a fixed position of the wafer in order to monitor the process during wafer processing by a semiconductor process plant; the test area can also be understood as an area used to form a test unit (test key).

[0056] Next, a functional structure layer 120 is formed on the device area and the test area. The functional structure layer 120 is a structure layer that realizes the function of the device, so the layer is retained in the device finally manufactured. In the specific application of the semiconductor device as a MEMS sensor, the functional structure layer 120 is, for example, a layer for forming a lower electrode plate; the material of the functional structure layer 120 is, for example, polycrystalline silicon (poly).

[0057] Optionally, other layers may be provided between the substrate 100 and the functional structure layer 120; for example, Figure 3 The case where a dielectric layer 110 is further included is shown. The dielectric layer 110 can be used to separate the functional structure layer 120 from the substrate 100. The material of the dielectric layer 110 is, for example, silicon oxide.

[0058] In addition, the dielectric layer 110 may further include a plurality of first grooves G1 ; the functional structure layer 120 is not only formed on the dielectric layer 110 , but is also partially located in the first grooves G1 .

[0059] A sacrificial layer 130 is formed on the functional structure layer 120. It is understood that the sacrificial layer 130 is removed in a subsequent process. The material of the sacrificial layer 130 is, for example, silicon oxide.

[0060] In the test area, the functional structure layer 120 may also include a plurality of second grooves G2; the plurality of second grooves G2 divide the functional structure layer 120 into a plurality of repeating regions 1202, and the plurality of repeating regions 1202 may be used to define the positions where the repeating structures are formed in the subsequent process; and by dividing the functional structure layer 120 into a plurality of repeating regions 1202, it is helpful to reduce the difficulty of obtaining the geometric dimension parameters of the slope structure in optical measurement. It should be noted that the "repeat" recorded in this article refers to the same thing appearing again; the "repeat structure" refers to any one of the same structures; similarly, the "repeat region 1202" refers to any one of the same regions, combined with Figure 3 As shown, the functional structure layer 120 is divided into a plurality of identical regions within the test area, and the repeated region 1202 refers to one of the plurality of identical regions.

[0061] Figure 7 This is a schematic top view of a test area in one embodiment of the present application; Figure 8 This is a top view schematic diagram of the test area in another embodiment of the present application. As shown in the figure, each repeating area 1202 is arranged in parallel. The width x of each repeating area 1202 is in the range of 1.5 microns to 15.5 microns; the spacing y between two adjacent repeating areas 1202 is in the range of 1.5 microns to 15.5 microns. Here, the width of each repeating area 1202 refers to the size of each repeating area 1202 along the arrangement direction; the spacing between two adjacent repeating areas 1202 is also the width of the second groove G2.

[0062] For example, the width x of each repeating region 1202 may include at least one of the following: 6 microns, 8 microns, 10 microns; the spacing y between two adjacent repeating regions 1202 may include at least one of the following: 4 microns, 6 microns, 8 microns. The values ​​of x and y may refer to the following Table 1:

[0063] [Table 1]

[0064] x / μm 6 8 10 y / μm 4 6 8

[0065] Selecting a suitable width x and spacing y is conducive to forming a slope structure in the test area that can equivalently replace the slope structure in the device area, so that by optically measuring the test unit to which the harmonic structure belongs, the geometric size parameters of the slope structure in the device area can be equivalently obtained.

[0066] As a feasible implementation, in the test area, the width x of each repeating area 1202 has multiple values ​​(please refer to Figure 7 ); for example, it includes both a repeating area 1202 with a width of 6 microns and a repeating area 1202 with a width of 8 microns and / or 10 microns. The spacing y between two adjacent repeating areas 1202 may also include multiple values; for example, it includes both a place where the spacing y is equal to 4 microns and a place where the spacing y is equal to 6 microns and / or 8 microns. In this way, a plurality of different sub-test areas can be formed on a substrate 100. By measuring each sub-test area separately, the test unit closest to the slope structure of the device area can be found, that is, the test unit that is most suitable for equivalently replacing the chip in the device area, so as to determine the geometric size parameters of the slope structure of the device area according to the optical measurement results of the test unit.

[0067] As another feasible implementation, in the test area, there may be only one width x of the repeating region 1202 and one spacing y between two adjacent repeating regions 1202 (see Figure 8 ). The width x and spacing y can be set based on experience; for example, after finding the test unit that is most suitable for equivalently replacing the device area chip, its x and y values ​​are determined as the x and y values ​​of the test area in the current manufacturing process. In this way, the design can be simplified and the test area area can be saved.

[0068] Next, please refer to Figure 4 . The portion of the sacrificial layer 130 located in the device area and the portion located in the test area are etched synchronously to form a first trench V1 in the device area and a second trench V2 in the test area. It is easy to understand that the simultaneous etching of the portion of the sacrificial layer 130 located in the device area and the portion located in the test area means that the above two different positions are etched in the same etching process, and the etchant, ambient temperature, atmosphere, and etching time used in the etching process are the same. Therefore, the formation of the first trench V1 in the device area and the formation of the second trench V2 in the test area should also be the same in theory. There is an inclination angle α greater than 90 degrees between the bottom of the side wall of the first trench V1 and the upper surface of the functional structure layer 120, so that the sacrificial layer 130 forms a slope structure 131 at the corresponding position; similarly, there is also an inclination angle α greater than 90 degrees between the bottom of the side wall of the second trench V2 and the upper surface of the functional structure layer 120, so that the sacrificial layer 130 also forms a slope structure 131 at the corresponding position.

[0069] The first grooves V1 are used to fill the support structure. The steps of filling the support structure will be described in detail later. The number of the first grooves V1 is not specifically limited.

[0070] In order to smoothly perform optical measurement, there are multiple second grooves V2 located in at least one test area, and the multiple second grooves V2 divide the portion of the sacrificial layer 130 located in the test area into multiple repeated structures 1302. Here, the multiple repeated structures 1302 correspond to the multiple repeated regions 1202 of the functional structure layer 120.

[0071] It can be understood that the width x of the repeating region 1202 should be greater than or equal to the bottom line width of the repeating structure 1302. Here, the bottom line width of the repeating structure 1302 also refers to the size of the lower surface of the repeating structure 1302 along the arrangement direction of the repeating structure 1302. The bottom line width of the repeating structure 1302 should be greater than or equal to twice the projection width c of the slope structure 131. The repeating structures 1302 are arranged in parallel. The bottoms of both side walls of each repeating structure 1302 along the arrangement direction include the slope structure 131.

[0072] Here, the sidewall of the repeating structure 1302 refers to the outer sidewall of the repeating structure 1302 .

[0073] The number of the repeated structures 1302 located in at least one test area is greater than or equal to 4. Therefore, it is beneficial to use the machine to successfully complete the optical measurement of the repeated structures 1302. In order to more accurately obtain the geometric dimension parameters of the slope structure 131, the number of the repeated structures 1302 located in at least one test area can be greater than or equal to 10.

[0074] The spacing between two adjacent repeating structures 1302 is within the range of 2 microns to 15 microns; the bottom line width of each repeating structure is within the range of 2 microns to 15 microns. Corresponding to the size of each repeating region 1202, the width of each repeating structure 1302 may include at least one of the following: 5 microns to 6 microns, 7 microns to 8 microns, 9 microns to 10 microns; the spacing between two adjacent repeating structures 1302 may include at least one of the following: 4 microns to 5 microns, 6 microns to 7 microns, 8 microns to 9 microns.

[0075] As a feasible implementation, in the test area, the width of each repeating structure 1302 and the spacing between two adjacent repeating structures 1302 can have multiple values; for example, they can have more than three values. As another feasible implementation, in the test area, there can also be only one value for the width of the repeating structure 1302 and the spacing between two adjacent repeating structures 1302.

[0076] Next, the geometrical dimension parameters of the slope structure 131 are obtained by optically measuring the plurality of repeated structures 1302 .

[0077] Here, multiple repeated structures 1302 are measured, and the obtained data has higher accuracy.

[0078] The geometric dimension parameters of the slope structure 131 are obtained by optically measuring the multiple repeating structures 1302, which can specifically include: obtaining the angle θ of the slope structure 131 by optically measuring the multiple repeating structures 1302. It can be understood that the sum of the angle θ of the slope structure 131 and the inclination angle α is equal to 180 degrees. The optical measurement of the multiple repeating structures 1302 can be performed using an angle measuring machine such as a thin film measurement system, for example, Nandk's Gemini Series, 8000CD and other machines. The machine irradiates light onto the repeating structure 1302, and obtains the angle θ of the slope structure 131 by monitoring the signal reflected back from the repeating structure 1302. The schematic diagram of the light beam propagation path when the machine performs optical measurement on the repeating structure 1302 can be referred to Fig. 9 As shown in the figure, the incident beam (Incident Beam) is emitted by the machine and irradiates the repeating structure 1302, and forms a reflected beam (Reflected Beam) and a transmitted beam (Transmitted Beam) after being acted upon by the repeating structure 1302; thus, the machine outputs various geometric dimension parameters, such as directly outputting angle values, by monitoring and spectral analysis of the reflected beam and the transmitted beam.

[0079] As an optional implementation, the method provided in the embodiment of the present application may further include: determining whether the angle of the slope structure 131 is within a preset angle range; if the determination result is that it is within a preset angle range, executing subsequent steps.

[0080] Here, the preset angle range is, for example, 20 degrees to 45 degrees. It can be understood that the angle of the slope structure 131 is within the range of 20 degrees to 45 degrees, which is more conducive to reducing stress concentration.

[0081] Next, please refer to Figure 5 The subsequent process may include: filling the first trench V1 with a support structure 140. Here, the material of the support structure 140 may be silicon nitride. In practical applications, the support structure 140 may not only be filled in the first trench V1, but also cover the surface of the sacrificial layer 130, thereby forming a structure with a wide top and a narrow bottom.

[0082] Next, please refer to Figure 6The subsequent process may also include: removing the sacrificial layer 130 to form a cavity 150 at the location of the sacrificial layer 130. In the MEMS sensor, the cavity 150 can provide a movable space for the vibration of the functional structure layer 120. It can be understood that the subsequent process should also include the step of forming an upper electrode plate; since the step of forming an upper electrode plate is a common step in the MEMS sensor manufacturing process, it will not be described in detail here.

[0083] The manufacturing method of the device with a slope structure provided by the embodiment of the present application can simplify the process of measuring the geometric dimension parameters of the slope structure, making the entire measurement process simple and fast. A single machine can complete all measurements and directly obtain the angle value of the slope structure. By measuring multiple repeated structures, the measurement accuracy can be improved. In addition, a reference opinion is provided for measuring the parameters of complex structures.

[0084] When the manufacturing method of the device with the slope structure provided by the embodiment of the present application is used, when it is determined that the angle of the slope structure belongs to the preset angle range, the subsequent process can be continued; when it is determined that the angle of the slope structure does not belong to the preset angle range, it can be scrapped after this step to avoid the waste of time and cost caused by the execution of the subsequent process. In addition, under certain circumstances, it is also possible to adjust the process in time so that the angle of the adjusted slope structure belongs to the preset angle range. For the structure whose angle of the slope structure belongs to the preset angle range and continues to execute the subsequent process, the geometric dimension parameters of the slope structure, especially the angle, will help engineers evaluate the performance of the product.

[0085] On this basis, an embodiment of the present application further provides a semiconductor structure. The semiconductor structure is used, for example, to form a MEMS device; wherein the MEMS device includes, for example, a MEMS microphone, etc. The semiconductor structure may be a wafer having a semiconductor device formed on the surface but not yet cut, so that a test area is still retained on the semiconductor structure.

[0086] Specifically, the semiconductor structure includes: a substrate, including at least one device area and at least one test area; a functional structure layer formed on the device area and the test area; a support structure formed on the functional structure layer, the bottom of the side wall of the support structure and the upper surface of the functional structure layer enclose a cavity with a first angle, and the first angle is less than 90 degrees; a plurality of repeating units located in at least one test area, each repeating unit is arranged in parallel, and a second angle is formed between the bottom of the two side walls of each repeating unit along the arrangement direction and the upper surface of the functional structure layer, and the second angle is equal to the first angle.

[0087] Among them, the side wall refers to the outer side wall of the corresponding structure; for example, the side wall of the supporting structure specifically refers to the outer side wall of the supporting structure; the two side walls of the repeating unit specifically refer to the two opposite outer side walls of the repeating unit. The first angle is equal to the angle θ. The repeating unit can be the above-mentioned repeating structure 1302, or it can be the cavity left after the above-mentioned repeating structure 1302 is removed, and the present application does not make specific restrictions on this. It should be understood that even if the repeating unit is the cavity left after the above-mentioned repeating structure 1302 is removed, the position, shape, and geometric size parameters of the repeating unit and the above-mentioned repeating structure 1302 are consistent.

[0088] Optionally, the number of repeating units located in at least one test area is greater than or equal to 4.

[0089] Optionally, the spacing between two adjacent repeating units is in the range of 2 microns to 15 microns; and the bottom line width of each repeating unit is in the range of 2 microns to 15 microns.

[0090] It should be noted that the semiconductor structure embodiment provided in the present application and the manufacturing method embodiment of the semiconductor device with a slope structure belong to the same concept; the technical features in the technical solutions recorded in the embodiments can be combined arbitrarily without conflict. Therefore, for the semiconductor structure provided in the embodiment of the present application, the manufacturing method embodiment of the semiconductor device with a slope structure can be referred to, and no further description will be given here.

[0091] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present invention that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present invention and do not limit the scope of protection of the patent of the present invention.

Claims

1. A method for manufacturing a semiconductor device having a slope structure, characterized in that: The method comprises: Providing a substrate, the substrate comprising at least one device area and at least one test area; forming a functional structure layer on the device area and the test area; forming a sacrificial layer on the functional structure layer; The portion of the sacrificial layer located in the device area and the portion located in the test area are etched synchronously to form a first groove in the device area and a second groove in the test area; wherein the first groove is used to fill the support structure; the number of the second grooves located in at least one of the test areas is multiple, and the multiple second grooves divide the portion of the sacrificial layer located in the test area into multiple repeated structures; the bottom of the sidewalls of the first groove and the second groove have an inclination angle greater than 90 degrees with the upper surface of the functional structure layer, so that the sacrificial layer forms a slope structure at the corresponding position; The geometrical dimension parameters of the slope structure are obtained by optically measuring the multiple repeated structures.

2. The method for manufacturing a semiconductor device having a slope structure according to claim 1, characterized in that: The number of the repeated structures located in at least one of the test areas is greater than or equal to 4.

3. The method for manufacturing a semiconductor device having a slope structure according to claim 1, characterized in that: The spacing between two adjacent repeating structures is in the range of 2 microns to 15 microns; and the bottom line width of each repeating structure is in the range of 2 microns to 15 microns.

4. The method for manufacturing a semiconductor device having a slope structure according to claim 1, characterized in that: The step of obtaining the geometrical dimension parameters of the slope structure by optically measuring the plurality of repeated structures comprises: The angle of the slope structure is obtained by optically measuring the multiple repeated structures; the sum of the angle of the slope structure and the tilt angle is equal to 180 degrees.

5. The method for manufacturing a semiconductor device having a slope structure according to claim 4, characterized in that: The method further comprises: Determine whether the angle of the slope structure belongs to a preset angle range; if the determination result is yes, execute the subsequent process.

6. The method for manufacturing a semiconductor device having a slope structure according to claim 5, characterized in that: The preset angle range is 20 degrees to 45 degrees.

7. The method for manufacturing a semiconductor device having a slope structure according to claim 5, characterized in that: The subsequent process includes: filling the support structure in the first groove; The sacrificial layer is removed to form a cavity at a portion of the sacrificial layer located in the device region.

8. A semiconductor structure, characterized in that: include: A substrate, comprising at least one device area and at least one test area; A functional structure layer is formed on the device area and the test area; A support structure is formed on the functional structure layer, wherein a cavity having a first angle is formed between the bottom of the side wall of the support structure and the upper surface of the functional structure layer, and the first angle is less than 90 degrees; A plurality of repeating units are located in at least one of the test areas, and the repeating units are arranged in parallel. A second angle is formed between the bottom of the two side walls of the repeating units along the arrangement direction and the upper surface of the functional structure layer, and the second angle is equal to the first angle.

9. The semiconductor structure according to claim 8, characterized in that: The number of the repeating units located in at least one of the test areas is greater than or equal to 4.

10. The semiconductor structure according to claim 8, characterized in that The spacing between two adjacent repeating units is in the range of 2 microns to 15 microns; the bottom line width of each repeating unit is in the range of 2 microns to 15 microns.

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