Light-emitting device

Abstract

The present invention discloses a light-emitting device comprising a light-emitting unit. The light-emitting unit emits light having a spectrum. The spectrum has a main peak between 520 nanometers and 780 nanometers, and a sub-peak between 400 nanometers and 470 nanometers corresponding to a wavelength. The spectrum includes a first sub-peak integral from the wavelength minus 20 nanometers to the wavelength, and an intensity integral from 521 nanometers to 780 nanometers. The ratio of the first sub-peak integral to the intensity integral ranges from 0.05% to 2%.

Description

[0001] This application is a divisional application of the invention patent application with an application date of October 9, 2019, application number 201910955089.X, and invention name “Light-emitting device”. Technical Field

[0002] The present invention relates to a light-emitting device, and in particular to a light-emitting device comprising a light conversion element. Background Art

[0003] In conventional light-emitting devices, green and red light are often mixed to produce light of other colors (e.g., yellow light). However, in conventional light-emitting devices, the color of the light (e.g., yellow light) appears bluish to the observer. Therefore, the present invention provides a light-emitting device that alleviates this problem. Summary of the Invention

[0004] In some embodiments, a light-emitting device includes a light-emitting unit that emits light having a spectrum. The spectrum has a main peak between 520 nanometers (nm) and 780 nm, and a sub-peak between 400 nm and 470 nm corresponding to a wavelength. The spectrum includes a first sub-peak integral from the wavelength minus 20 nm to the wavelength, and an intensity integral from 521 nm to 780 nm. The ratio of the first sub-peak integral to the intensity integral ranges from 0.05% to 2%. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 FIG. 1 is a schematic cross-sectional view of a light emitting device according to a first embodiment of the present invention.

[0006] Figure 2 FIG. 1 is a schematic diagram of the spectrum of the light emitted by the first light-emitting unit or the second light-emitting unit of the first embodiment.

[0007] Figure 3 FIG. 1 is a schematic diagram of the spectrum of the light emitted by the first light-emitting unit and the second light-emitting unit of the first embodiment.

[0008] Figure 4 This is the CIE 1931 chromaticity coordinate diagram.

[0009] Figure 5 for Figure 4 An enlarged view of the region G is shown and points showing different emitted lights emitted by the first light emitting unit.

[0010] Figure 6 for Figure 4 An enlarged view of the region R is shown and points showing different emitted lights emitted by the second light emitting unit.

[0011] Figure 7 FIG. 4 is a schematic cross-sectional view of a light emitting device according to a second embodiment.

[0012] Figure 8 FIG. 4 is a schematic cross-sectional view of a light emitting device according to a third embodiment.

[0013] Explanation of reference numerals: 10 - light-emitting device; 100 - first substrate; 102 - second substrate; 1041 - spacer; 1042 - light modulation layer; 106 - shielding structure; 1081, 1082 - polarizer; 110 - optical film; 112, 122 - light source; 114 - light guide plate; 116 - optical layer; 118 - isolation structure; 120 - flat layer; AP - opening; BF - blocking structure; BL - backlight module; CE - chromaticity diagram boundary; CGL - charge generation layer; CL1, CL2 - light; DP - panel ; EIL2, EIL1-electron injection layer; EL1-first electrode; EL2-second electrode; ETL2, ETL1-electron transport layer; G, R, Y, CS-region; G0, G1, G2, G3, R0, R1, R2, R3, R4-point; HIL2, HIL1-hole injection layer; HTL2, HTL1-hole transport layer; I1, I2-intensity; IL1, IL2-incident light; LA-light absorbing material; LCE1, LCE2, LCE3-light conversion element; LE-light emitting element; LE 1-first light-emitting element; LE2-second light-emitting element; LE3-third light-emitting element; LEL2, LEL1-light-emitting structure; LS-spectrum; LS1-first spectrum; LS2-second spectrum; LU1-first light-emitting unit; LU2-second light-emitting unit; LU3-third light-emitting unit; MI-intensity integral; MP1, MP2-main wave peaks; MW, MW1, MW2-main wave; OL1-first light; OL2-second light; OL3-third light; PDL-pixel definition layer; PL-protective layer; QD1 -quantum dots; SI1, SI11, SI12-first sub-peak integral; SI2, SI21, SI22-second sub-peak integral; SI3-third sub-peak integral; SI4-fourth sub-peak integral; SI51, SI52-fifth sub-peak integral; SI61, SI62-sixth sub-peak integral; SP1-first sub-peak; SP2-second sub-peak; SU-substrate; SW, SW1, SW2-sub-wave; V-normal direction; Wm, W1, W2, W3, W4, W5, W11, W12-wavelength. DETAILED DESCRIPTION

[0014] The present invention will be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and simplicity, the various figures in this disclosure depict only portions of the electronic device, and certain components in the figures are not drawn to scale. Furthermore, the number and dimensions of components in the figures are for illustrative purposes only and are not intended to limit the present invention.

[0015] Throughout the present specification and the appended claims, certain terms are used to refer to specific components. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same components by different names. Throughout the following specification and claims, the words "including" and "comprising" are open-ended and should be interpreted as meaning "including, but not limited to..."

[0016] It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, it can be directly on or directly connected to the other element or layer, or there can be intervening elements or layers between the two (indirect case). Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there are no intervening elements or layers between the two.

[0017] The terms "about," "substantially," "equal to," or "same" typically mean within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

[0018] While the terms "first," "second," "third," etc. may be used to describe various components, these terms are not intended to be limiting. These terms are used solely to distinguish a single component from other components within the specification. Claims may not use the same terms, but may be replaced with "first," "second," "third," etc., according to the order in which the components are declared in the claims. Thus, in the following description, the first component may be referred to as the second component in a claim.

[0019] It should be noted that the following embodiments may be implemented by replacing, reorganizing, or mixing the technical features of several different embodiments without departing from the spirit of the present invention to complete other embodiments.

[0020] Please refer to Figure 1 , Figure 1FIG1 is a schematic cross-sectional view of a light-emitting device according to a first embodiment of the present invention. The light-emitting device may include, but is not limited to, a display device, an electronic device, a flexible device, or other suitable device. In some embodiments, the light-emitting device may be used in a tiled device. For example, the light-emitting device 10 may be a display device, which may include a panel DP and a backlight module BL, with the panel DP disposed relative to the backlight module BL. The panel DP may include a first substrate 100, a second substrate 102, and a light modulation layer 1042 disposed between the first and second substrates 100, 102. The first substrate 100 may be disposed between the light modulation layer 1042 and the backlight module BL. The first substrate 100 and / or the second substrate 102 may include a transparent substrate, such as, but not limited to, a rigid substrate (e.g., a glass substrate or a quartz substrate), a flexible substrate (e.g., a plastic substrate), or a combination thereof. The plastic substrate may be made of, but is not limited to, polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET). In one embodiment, the light-emitting device includes a liquid crystal panel, the light modulation layer 1042 may include a liquid crystal layer, and spacers 1041 may be disposed between the first substrate 100 and the second substrate 102. Furthermore, the panel DP may include, but is not limited to, an alignment layer (e.g., a polyimide layer), electrodes (e.g., pixel electrodes or common electrodes), or a shielding structure 106. The first substrate 100 may include an array substrate. The second substrate 102 may include, but is not limited to, a color filter layer substrate or a protective substrate. For example, but is not limited to, transistors, signal lines, scan lines, data lines, or an insulating layer may be disposed on the first substrate 100. For example, the shielding structure 106 may be disposed between the second substrate 102 and the first substrate 100. The shielding structure 106 may include a plurality of openings, and the light conversion elements LCE1, LCE2, or LCE3 may be disposed in corresponding openings of the shielding structure 106. The shielding structure 106 may be made of, but is not limited to, black photoresist, black printing ink, black resin, or other suitable materials, or combinations thereof.

[0021] The panel DP may further include a polarizer 1081 and / or a polarizer 1082. The polarizer 1081 may be disposed between the first substrate 100 and the backlight module BL, and the polarizer 1082 may be disposed between the light conversion element (e.g., light conversion element LCE1, light conversion element LCE2, or light conversion element LCE3) and the light modulation layer 1042. However, the placement of the polarizer 1081 and the polarizer 1082 is not limited to the above. In some embodiments, the light-emitting device includes a light modulation layer 1042 (e.g., liquid crystal). The light modulation layer 1042 may be disposed between the polarizer 1081 and the polarizer 1082 to adjust the grayscale, while the light conversion element is not disposed between the two polarizers. In some embodiments, the polarizer 1081 and / or the polarizer 1082 are disposed between the first substrate 100 and the second substrate 102. The polarizer 1081 and / or the polarizer 1082 may include a metal wire, i.e., a wire grid polarizer (WGP), but is not limited thereto. The material of the metal wire includes, but is not limited to, a metal, a metal alloy, other suitable materials, or a combination of the above materials. In some embodiments, the first substrate 100 and the second substrate 102 may be disposed between the polarizer 1081 and the polarizer 1082. The material of the polarizer 1081 and the polarizer 1082 may include a protective film, triacetate cellulose (TAC), polyvinyl alcohol (PVA), a pressure sensitive adhesive (PSA), or a release film, but is not limited thereto. In addition, the panel DP may further include at least one optical film 110 disposed between the panel DP and the backlight module BL. In some embodiments, the optical film 110 includes a reflective polarizing duel brightness enhancement film (DBEF), a prism film, other suitable optical films, or a combination thereof, but is not limited thereto.

[0022] The backlight module BL may include a light source 112 and a light guide plate 114. Figure 1 As shown, the backlight module BL may include an edge-lit backlight module, and the light source 112 may be disposed adjacent to at least one sidewall of the light guide plate 114, but is not limited thereto. The light source 112 may include, but is not limited to, a light emitting diode (LED), a micro LED, a sub-millimeter LED, an organic LED (OLED), a fluorescent material, a phosphorescent material, other suitable light sources, or a combination of the foregoing. In one embodiment, the backlight module BL may emit blue light or ultraviolet light, but is not limited thereto.

[0023] like Figure 1 As shown, the light-emitting device 10 may include a first light-emitting unit LU1, a second light-emitting unit LU2, and / or a third light-emitting unit LU3. The first light-emitting unit LU1 includes a first light-emitting element LE1 and a first light conversion element LCE1, the second light-emitting unit LU2 includes a second light-emitting element LE2 and a second light conversion element LCE2, and the third light-emitting unit LU3 includes a third light-emitting element LE3 and a third light conversion element LCE3. One of the above light-emitting units may, for example, correspond to a vertically stacked layer (or element) structure of a portion of the light-emitting device 10. For example, one of the above light-emitting units may be a portion of the light-emitting device 10 that emits light of a single color (e.g., red, green, or blue, but not limited thereto). One of the above light-emitting units may correspond to one of the openings in the shielding structure 106. In one of the light-emitting units, the light conversion element may be disposed on the light-emitting element. For example, the first light conversion element LCE1 is disposed on the first light-emitting element LE1, the second light conversion element LCE2 is disposed on the second light-emitting element LE2, and the third light conversion element LCE3 is disposed on the third light-emitting element LE3. In addition, the light modulation layer 1042 may be disposed between the light emitting element and the light conversion element.

[0024] Figure 1 In the normal direction V, a portion of the backlight module BL corresponding to the first light conversion element LCE1 (e.g., a portion of the light guide plate 114) can be considered as the first light-emitting element LE1; a portion of the backlight module BL corresponding to the second light conversion element LCE2 can be considered as the second light-emitting element LE2; and a portion of the backlight module BL corresponding to the third light conversion element LCE3 can be considered as the third light-emitting element LE3. The normal direction V is, for example, perpendicular to the first substrate 100.

[0025] The first light conversion element LCE1, the second light conversion element LCE2, or the third light conversion element LCE3 may include quantum dots, fluorescent materials, phosphorescent materials, color filters, other suitable materials, or combinations thereof, but are not limited thereto. Quantum dots may be formed from semiconductor nanocrystal structures and may include, but are not limited to, cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc sulfide (ZnS), mercury telluride (HgTe), indium arsenide (InAs), alloys (Cd1-xZnxSe1-ySy), cadmium selenide / zinc sulfide, indium phosphide (InP), and gallium arsenide (GeAs). The quantum dots may have a particle size between 1 nanometer (nm) and 30 nm, between 1 nm and 20 nm, or between 1 nm and 10 nm. In one embodiment, the quantum dots can be excited by incident light emitted by the backlight module BL, which can then convert the incident light into emitted light having different wavelengths. The color of the emitted light can be adjusted by the material and / or size of the quantum dots. In another embodiment, the quantum dots can emit light of an appropriate color. The quantum dots can include spherical particles, cylindrical particles, or particles with any other suitable shape.

[0026] like Figure 1 As shown, the first light conversion element LCE1 may include quantum dots QD1. Quantum dots QD1 can be excited by a portion of incident light IL1, and this portion of incident light IL1 can be converted into light CL1 by quantum dots QD1. Because the conversion efficiency of quantum dots may not be 100%, another portion of incident light IL1 may not be converted into light CL1, and the first light OL1 may be, for example, a mixture of light CL1 and unconverted incident light IL1. The first light OL1 may be the output light emitted by the first light-emitting unit LU1. In the present invention, the output light may be, for example, the final visible light emitted from the light-emitting device 10 and seen by an observer.

[0027] like Figure 1 As shown, the second light conversion element LCE2 may include quantum dots QD2. Quantum dots QD2 may be excited by a portion of incident light IL2, and the portion of incident light IL2 may be converted by quantum dots QD2 into light CL2. Quantum dots QD2 may be different from quantum dots QD1. Second light OL2 may be a mixture of light CL2 and unconverted incident light IL2. Second light OL2 may be the outgoing light emitted by the second light-emitting unit LU2.

[0028] In one embodiment, the third light OL3 emitted by the third light-emitting unit LU3 may be blue light. Because the third light-emitting element LE3 emits blue light, the third light conversion element LCE3 may be optionally replaced with a transparent layer, wherein the transparent layer may not include quantum dots. The transparent layer may comprise, but is not limited to, a transparent dielectric material. In some embodiments, the third light conversion element LCE3 may include a blue color filter layer. In some embodiments, the third electronic unit EU3 may not include the third light conversion element LCE3. In some embodiments, the third light conversion element LCE3 may include a suitable type of quantum dots to adjust the wavelength of the third light OL3.

[0029] In some embodiments, a plurality of light-absorbing materials LA may be disposed in the first light conversion element LCE1 and / or the second light conversion element LCE2. In some embodiments, the light-absorbing materials LA may be disposed on the first light conversion element LCE1 and / or the second light conversion element LCE2. For example, the light-absorbing materials LA may be mixed into a suitable film layer on the first light conversion element LCE1 and / or the second light conversion element LCE2. The light-absorbing materials LA may be used to absorb a portion of the unconverted incident light IL1 (and / or a portion of the unconverted incident light IL2), thereby reducing the amount of unconverted incident light IL1 (and / or incident light IL2). The light-absorbing materials LA may include, but are not limited to, benzotriazole, titanium dioxide (TiO2), zirconium dioxide (ZrO2), other suitable materials, or combinations thereof. Benzotriazole, titanium dioxide, or zirconium dioxide may absorb light with a wavelength less than 450 nanometers or less than 400 nanometers, but are not limited to these.

[0030] For example, the content ratio of benzotriazole in the light absorbing material LA may range from 0.1% to 20.2% (0.1% ≤ content ratio ≤ 20.2%), and the content ratio of titanium dioxide in the light absorbing material LA may range from 0.2% to 19.6% (0.2% ≤ content ratio ≤ 19.6%). In this case, the transmittance of the light absorbing material LA for light with a wavelength of 450 nm may range from 86.5% to 91.2% (86.5% ≤ transmittance ≤ 91.2%), the transmittance of the light absorbing material LA for light with a wavelength of 400 nm may range from 1.66% to 11.8% (1.66% ≤ transmittance ≤ 11.8%), and the transmittance of the light absorbing material LA for light with a wavelength of 380 nm may range from 0.0005% to 0.005% (0.0005% ≤ transmittance ≤ 0.005%). The content ratio of different materials can be adjusted according to needs.

[0031] Furthermore, the light absorbing material LA may include, but is not limited to, a yellow pigment (Y-pigment), a yellow dye (Y-dye), a yttrium aluminum garnet (YAG) phosphorescent material, other suitable materials, or combinations thereof. The Y-pigment may include, but is not limited to, C16H12Cl2N4O4, Y184, Y185, Y189, Y194, Y213, Y120, Y128, Y138, Y139, Y150, or Y151. The Y-dye may include C26H18N4Na2O8S2. The yttrium aluminum garnet phosphorescent material may include, but is not limited to, YAG:Ce3+, Y3Al5O12:Ce3+, or other commercially available yttrium aluminum garnet phosphorescent materials.

[0032] Please refer to Figure 2 , Figure 2 Schematic diagram of the spectrum of the outgoing light emitted by the first light emitting unit or the second light emitting unit of the first embodiment. The spectra of the first light OL1 and the second light OL2 may have similar characteristics or properties. The characteristics of the spectrum LS described below can be applied to the first light emitting unit LU1 and the second light emitting unit LU2.

[0033] exist Figure 2 In the spectrum LS, the main wave MW may include a main wave MW and a sub-wave SW. The main wave MW may represent the light CL1 (or the light CL2) converted by the first light conversion element LCE1 (or the second light conversion element LCE2). The main peak of the main wave MW may correspond to the wavelength Wm, and the wavelength Wm may range from 520 nanometers to 780 nanometers. The "main peak of the main wave" may be defined as the peak of the main wave MW. In other spectra, the "main peak of the main wave" may also be defined as described above. In addition, a portion of the incident light may be converted by the first light conversion element LCE1 (or the second light conversion element LCE2), and the intensity of the main peak of the main wave MW is greater than the intensity of the sub-peak of the sub-wave SW.

[0034] The sub-wave SW may represent the unconverted incident light IL1 in the first light OL1 (or the unconverted incident light IL2 in the second light OL2). It is noteworthy that the sub-wave SW corresponds to the unconverted incident light. The sub-wave peak of the sub-wave SW corresponds to the wavelength W1 in the range of 400 nanometers to 470 nanometers, so the sub-wave SW may correspond to blue light. The "sub-wave peak of the sub-wave" is defined as the peak of the sub-wave SW. In other spectra, the "sub-wave peak of the sub-wave" may also be defined as described above. In some embodiments, the light absorbing material LA may have a greater absorbance for light of shorter wavelengths (for example, less than or equal to 400 nanometers, but not limited thereto), and the waveform of the sub-wave SW may be asymmetric. As Figure 2As shown in the enlarged view (a) of the neutron wavelet SW, the first sub-peak integral SI1 of the spectrum LS is the intensity integral of a portion of the waveform of the wavelet SW. This first sub-peak integral SI1 is calculated by superimposing the wavelength from W1 minus 20 nanometers (W1(nm)-20nm) to the wavelength W1. Furthermore, the second sub-peak integral SI2 of the spectrum LS is the intensity integral of another portion of the waveform of the wavelet SW. This second sub-peak integral SI2 is calculated by superimposing the wavelength from W1 to the wavelength W1 plus 20 nanometers (W1(nm)+20nm). The waveform of the wavelet SW may be asymmetric, and the second sub-peak integral SI2 may differ from the first sub-peak integral SI1 and may be greater than the first sub-peak integral SI1. The ratio of the first sub-peak integral SI1 to the second sub-peak integral SI2 (SI1 / SI2) ranges from 20% to 98% (20% ≤ SI1 / SI2 ≤ 98%).

[0035] Furthermore, the intensity integral MI of the main wave MW can be calculated by superimposing the wavelengths from 521 nm to 780 nm. The ratio of the first sub-peak integral SI1 to the intensity integral MI of the main wave MW can range from 0.05% to 2% (0.05% ≤ SI1 / MI ≤ 2%), and the ratio of the second sub-peak integral SI2 to the intensity integral MI of the main wave MW can range from 0.05% to 10% (0.05% ≤ SI2 / MI ≤ 10%).

[0036] like Figure 2 As shown in the enlarged view (b) of the neutron wavelet SW, the sub-peak of the wavelet SW corresponds to intensity I1, while wavelengths W2 and W3 each correspond to intensity I2 (half the intensity of intensity I1), with wavelength W2 being smaller than wavelength W3. The intensity integral of the sub-wavelet SW of the spectrum LS calculated by superimposing wavelengths W4 and W2 can be defined as the third sub-peak integral SI3, where wavelength W4 is equal to wavelength W2 minus 20 nanometers (W4 (nm) = W2 (nm) - 20 nm). Another intensity integral of the sub-wavelet SW of the spectrum LS calculated by superimposing wavelengths W3 and W5 can be defined as the fourth sub-peak integral SI4, where wavelength W5 is equal to wavelength W3 plus 20 nanometers (W5 (nm) = W3 (nm) + 20 nm). The third sub-peak integral SI3 is different from the fourth sub-peak integral SI4, and the ratio (SI3 / SI4) of the third sub-peak integral SI3 to the fourth sub-peak integral SI4 ranges from 4% to 30% (4%≤SI3 / SI4≤30%).

[0037] Please refer to Figure 3 , Figure 3 Schematic diagram of the spectrum of the light emitted by the first light emitting unit and the second light emitting unit of the first embodiment. Figure 3In the spectrum diagram (a), the first light OL1 emitted by the first light emitting unit LU1 has a first spectrum LS1 including a main wave MW1 and a sub-wave SW1, and the second light OL2 emitted by the second light emitting unit LU2 has a second spectrum LS2 including a main wave MW2 and a sub-wave SW2. The main wave MW1 and the main wave MW2 can correspond to Figure 1 In the light CL1 and the light CL2, the main wave MW1 may have a main peak MP1 between 525 nanometers and 585 nanometers, and the main wave MW2 may have a main peak MP2 between 595 nanometers and 775 nanometers. Figure 3 The spectrum of SW1 and SW2 can be respectively corresponded to Figure 1 The unconverted incident light IL1 and the unconverted incident light IL2 are shown in FIG. Figure 3 As shown in spectrum diagram (a), sub-wavelength SW1 may have a first sub-peak SP1 between 400 and 470 nanometers, and sub-wavelength SW2 may have a second sub-peak SP2 between 400 and 470 nanometers. The intensity of the first sub-peak SP1 may be different from the intensity of the second sub-peak SP2. For example, the intensity of the first sub-peak SP1 may be greater than the intensity of the second sub-peak SP2, but this is not limited to this.

[0038] like Figure 3 As shown in the enlarged view (b) of the sub-wave SW1 and sub-wave SW2, similar to the above content, the sub-wave SW1 in the first spectrum LS1 can have a first sub-wave peak integral SI11 and a second sub-wave peak integral SI21, and the sub-wave SW2 in the second spectrum LS2 can have a first sub-wave peak integral SI12 and a second sub-wave peak integral SI22. The first sub-peak SP1 of the first spectrum LS1 can correspond to the wavelength W11, and the second sub-peak SP2 of the second spectrum LS2 can correspond to the wavelength W12, wherein Figure 3 The wavelength W11 and the wavelength W12 in the equation may be the same, but are not limited thereto. In some embodiments, the wavelength W11 and the wavelength W12 may be different. The first sub-peak integral SI11 may be calculated by adding the wavelength W11 minus 20 nanometers (W11(nm)-20nm) to the wavelength W11, and the second sub-peak integral SI21 may be calculated by adding the wavelength W11 to the wavelength W11 plus 20 nanometers (W11(nm)+20nm). For example, the first sub-peak integral SI11 may be calculated by the formula The second sub-peak integral SI21 can be calculated by the formula , where I is the intensity of the sub-wave SW1 and λ is the wavelength. The first sub-wave peak integral SI12 can be calculated by adding the wavelength W12 minus 20 nanometers (W12(nm)-20nm) to the wavelength W12, and the second sub-wave peak integral SI22 can be calculated by adding the wavelength W12 to the wavelength W12 plus 20 nanometers (W12(nm)+20nm). For example, the first sub-wave peak integral SI12 can be calculated by the formula The second sub-peak integral SI22 can be calculated by the formula , where I is the intensity of wavelet SW2 and λ is the wavelength. In some embodiments, the ratio of the first sub-peak integral SI11 to the second sub-peak integral SI21 of the first spectrum LS1 (SI11 / SI21) is different from the ratio of the first sub-peak integral SI12 to the second sub-peak integral SI22 of the second spectrum LS2 (SI12 / SI22).

[0039] like Figure 3 As shown in the enlarged view (c) of the sub-wavelet SW1 and the sub-wavelet SW2, the fifth sub-peak integral SI51 of the sub-wavelet SW1 of the first spectrum LS1 can be obtained by superimposing and calculating from 380 nm to the wavelength W11 of the first sub-peak SP1, and the sixth sub-peak integral SI61 of the sub-wavelet SW1 of the first spectrum LS1 can be obtained by superimposing and calculating from the wavelength W11 of the first sub-peak SP1 to 520 nm. For example, the fifth sub-peak integral SI51 can be calculated by the formula The sixth sub-peak integral SI61 can be calculated by the formula , where I is the intensity of the sub-wave SW1 and λ is the wavelength. Furthermore, the fifth sub-peak integral SI52 of the sub-wave SW2 of the second spectrum LS2 can be calculated by superimposing the wavelength from 380 nm to the wavelength W12 of the second sub-wave peak SP2, and the sixth sub-peak integral SI62 of the sub-wave SW2 of the second spectrum LS2 can be calculated by superimposing the wavelength from the second sub-wave peak SP2 to 520 nm. For example, the fifth sub-peak integral SI52 can be calculated by the formula The sixth sub-peak integral SI62 can be calculated by the formula , where I is the intensity of sub-wave SW2 and λ is the wavelength. In some embodiments, the ratio of the fifth sub-wave peak integral SI51 to the sixth sub-wave peak integral SI61 (SI51 / SI61) is different from the ratio of the fifth sub-wave peak integral SI52 to the sixth sub-wave peak integral SI62 (SI52 / SI62).

[0040] In some embodiments, the first light OL1 may be green light, the second light OL2 may be red light, and the third light may be blue light, but the present invention is not limited thereto. In some embodiments, the light emitting device 10 may include other light emitting units that emit light of a different color than the first light OL1, the second light OL2, and the third light OL3. In some embodiments, the light emitting device 10 may include other light emitting units that emit light of different wavelengths.

[0041] Please refer to Figures 4 to 6 , Figure 4 is the CIE 1931 chromaticity coordinate diagram, Figure 5 for Figure 4 The enlarged view of the region G shown shows the points (chromaticity points) of different emitted lights emitted by the first light emitting unit. Figure 6 for Figure 4 The enlarged view of the region R shown in FIG. 1 shows the different points (chromaticity points) of the emitted light from the second light emitting unit. The color gamut can usually be represented by Figure 4 The area in the CIE1931 chromaticity coordinate diagram is represented by the numbers marked CE along the boundaries of the chromaticity diagram. Figure 4 , the color of light having an xy coordinate located in region Y may be yellow or yellowish.

[0042] exist Figure 5 In the figure, region CS represents the color space of light-emitting device 10, where point (chromaticity point) G0 may represent the primary green color. Point (chromaticity point) G1, point (chromaticity point) G2, and / or point (chromaticity point) G3 may correspond to the xy coordinates of first light OL1 emitted by first light-emitting unit LU1 in some embodiments, but the present invention is not limited thereto. The xy coordinates of points G0, G1, G2, and G3 may be as follows: G0xy = (0.17, 0.797), G1xy = (0.26, 0.705), G2xy = (0.27, 0.699), and G3xy = (0.275, 0.698). Comparing point G1, point G2, and / or point G3 with point G0 can result in the color of the first light OL1 being adjusted, for example, toward region Y. The intensity of the blue light in the first light OL1 can be reduced, resulting in a more yellowish color for the first light OL1 or, under the same intensity of green light, a higher perceived brightness for the human eye. In some embodiments, the reduced intensity of the blue light in the first light OL1 can be caused by the introduction of a light-absorbing material LA. In some embodiments, the xy coordinates of the first light OL1 can fall within region G of a chromaticity coordinate diagram. For example, the green x-coordinate value of the light-emitting device 10 in the CIE 1931 color gamut ranges from 0.17 to 0.29 (0.17 ≤ x ≤ 0.29), and the green y-coordinate value of the light-emitting device 10 in the CIE 1931 color gamut ranges from 0.675 to 0.797 (0.675 ≤ y ≤ 0.797).

[0043] like Figure 6 As shown, point R0 represents the primary red color, and points (chromaticity points) R1, R2, R3, and / or R4 may correspond to the xy coordinates of the second light OL2 emitted by the second light emitting unit LU2 in some embodiments. The xy coordinates of points R0, R1, R2, R3, and R4 may be as follows: R0xy = (0.708, 0.292), R1xy = (0.693, 0.303), R2xy = (0.6915, 0.3035), R3xy = (0.687, 0.3045), and R4xy = (0.684, 0.3082). Comparing points R1, R2, R3, and / or R4 with point R0 can result in the color of the second light OL2 being adjusted, for example, toward region Y. The intensity of the blue light in the second light OL2 can be reduced, making the color of the second light OL2 more yellow, or, under the same intensity of red light, resulting in a higher perceived brightness. In some embodiments, the reduction in the intensity of the blue light in the second light OL2 can be achieved by adding a light-absorbing material LA. In some embodiments, the xy coordinates of the second light OL2 can be located in region R of a chromaticity coordinate diagram. For example, the red x coordinate value of the light-emitting device 10 in the CIE 1931 color gamut ranges from 0.68 to 0.708 (0.68 ≤ x ≤ 0.708), and the red y coordinate value ranges from 0.292 to 0.31 (0.292 ≤ y ≤ 0.31).

[0044] Because the blue light (i.e., wavelet SW in spectrum LS) in the first and second light beams OL1 and OL2 is reduced, or the mixed light from the first and / or second light beams OL1 and OL2 is less likely to shift toward the blue region, the light-emitting device 10 can produce or provide light with a yellow or yellowish hue. In some embodiments, the light-emitting device 10 may not include a yellow light-emitting unit. When the color space of the light-emitting device 10 is adjusted (for example, by reducing blue light), the visual experience of the observer can be improved.

[0045] The spectrum can be measured, for example, using a spectroradiometer. During measurement, the spectroradiometer can be positioned on a side of the light-emitting device 10 away from the backlight module BL or the light-emitting elements. During measurement, the light-emitting device 10 can, for example, activate at least one first light-emitting unit LU1 (or at least one second light-emitting unit LU2), and emit first light OL1 (or second light OL2). During measurement, the first light-emitting unit LU1 or the second light-emitting unit LU2 can, for example, be operated at maximum grayscale. The spectroradiometer can include, but is not limited to, a CA-210, CS 1000T, CA-310, CA410, CS 2000, or other suitable instruments.

[0046] The technical features of different embodiments of the present invention may be replaced, reorganized or mixed. In order to facilitate comparison of the differences between these implementations, the following content will describe the differences between the different embodiments in detail, and the same technical features will not be repeated.

[0047] Please refer to Figure 7 , Figure 7 It is a cross-sectional schematic diagram of the light-emitting device of the second embodiment. Unlike the first embodiment, the light conversion elements (such as the first light conversion element LCE1, the second light conversion element LCE2 and the third light conversion element LCE3) may be arranged in the backlight module BL. In some embodiments, the light conversion elements (such as the first light conversion element LCE1, the second light conversion element LCE2 and the third light conversion element LCE3) may be arranged between the optical layer 116 and the panel DP. In some embodiments, the light conversion elements may be arranged on the optical layer 116 and separated by the isolation structure 118 to form an optical structure, which may be referred to as a "quantum dot color filter on a light guide plate" structure. In some embodiments, the light conversion elements may be covered by the flat layer 120, but are not limited to this. In some embodiments, the optical layer 116 may include a light guide plate, a diffuser plate or other optical film layer (or plate). The material of the isolation structure 118 and the material of the flat layer 120 may include a transparent material, an insulating material, other suitable materials or a combination of the above materials, but are not limited to this. In Figure 7 In one embodiment, the backlight module BL is a direct-lit backlight module and includes a plurality of light sources 122 disposed under the optical layer 116 .

[0048] In some embodiments, a plurality of blocking structures BF may be disposed on the first light conversion element LCE1 and the second light conversion element LCE2, for example, respectively, and the light absorbing material LA may be disposed in the blocking structures BF. Figure 7As shown. In some embodiments, the light absorbing material LA may be disposed on the light emitting element (e.g., the first light emitting element LE1 and the second light emitting element LE2) and / or on the light conversion element (e.g., the first light conversion element LCE1 and the second light conversion element LCE2). In some embodiments, the blocking structure BF may be in contact with the top surface (or other surface) of the first light conversion element LCE1 (and / or the second light conversion element LCE2), but is not limited thereto. In some embodiments, the blocking structure BF may include, but is not limited to, a yellow, red, or green color filter. It should be noted that the blocking structure BF may include, but is not limited to, a main material and at least one blocking material (or light absorbing material LA) disposed within the main material. The main material of the blocking structure BF may include, but is not limited to, a transparent material, an insulating material, other suitable materials, or a combination of the foregoing materials. The blocking material may, for example, block or filter at least a portion of blue light, but is not limited thereto. The blocking material may be similar to the light absorbing material LA, and therefore will not be described again here. In some embodiments, the blocking structure BF may be disposed in the opening AP of the shielding structure 106 of the first light emitting unit LU1 and / or the second light emitting unit LU2 , but is not limited thereto.

[0049] According to some embodiments (such as Figure 7 ), in the normal direction V, the portion of the light source 122 and the portion of the optical layer 116 corresponding to the first light conversion element LCE1 can be considered the first light-emitting element LE1. Furthermore, the second light-emitting element LE2 and the third light-emitting element LE3 can also be defined using the above method. In some embodiments, the third light conversion element LCE3 may include quantum dots QD3. The quantum dots QD3 can, for example, be excited by at least a portion of the incident light emitted by the third light-emitting element LE3 and convert the incident light into blue light having a different dominant peak wavelength.

[0050] Please refer to Figure 8 , Figure 8 1 is a cross-sectional view of a light emitting device according to a third embodiment. In some embodiments, the light emitting device 10 may include an organic light emitting diode (OLED). The light emitting elements (e.g., the first light emitting element LE1, the second light emitting element LE2, and the third light emitting element LE3) may share a light emitting element LE, but the present invention is not limited thereto. The common light emitting element LE may include at least one light emitting structure. For example, Figure 8As shown, in the normal direction V, the light-emitting element LE includes a plurality of second electrodes EL2, a hole injection layer HIL2, a hole transport layer HTL2, a light-emitting structure LEL2, an electron transport layer ETL2, an electron injection layer EIL2, a charge generation layer CGL, a hole injection layer HIL1, a hole transport layer HTL1, a light-emitting structure LEL1, an electron transport layer ETL1, an electron injection layer EIL1 and a first electrode EL1 stacked in sequence on the thin film transistor substrate, but is not limited to this.

[0051] The light-emitting structure LEL1 and the light-emitting structure LEL2 may include, but are not limited to, organic light-emitting materials or quantum dots, other suitable materials, or combinations thereof. The second electrode EL2 may be either a cathode or an anode, and the first electrode EL1 may be either a cathode or an anode. The second electrodes EL2 are, for example, separately disposed in corresponding light-emitting units. The second electrodes EL2 may be disposed on the protective layer PL, and a pixel definition layer (PDL) may be disposed on the second electrodes EL2. One of the openings in the pixel definition layer PDL may correspond to one of the second electrodes EL2, and a portion of the second electrode EL2 may be exposed through the opening in the pixel definition layer PDL. One of the second electrodes EL2 may, for example, pass through the protective layer PL to electrically connect to the transistors of the light-emitting units. In some embodiments, the light-emitting structure LEL1 and the light-emitting structure LEL2 may correspond to the first light-emitting unit LU1, the second light-emitting unit LU2, and the third light-emitting unit LU3, respectively, but are not limited thereto. In some embodiments, other elements may be optionally disposed between the light-emitting structure LEL1 and the light-emitting structure LEL2. In some embodiments, the material of the light-emitting structure LEL1 and the material of the light-emitting structure LEL2 may be the same or different. Furthermore, the first light conversion element LCE1, the second light conversion element LCE2, and the third light conversion element LCE3 can be disposed on a substrate SU, and the substrate SU can be disposed relative to the array substrate (not shown), but is not limited thereto. In some embodiments, the first light conversion element LCE1, the second light conversion element LCE2, and the third light conversion element LCE3 can be disposed on the same substrate as the light-emitting element LE, and the first light conversion element LCE1, the second light conversion element LCE2, and the third light conversion element LCE3 can be disposed above the light-emitting element LE, while the substrate SU can be a protective layer or film, but is not limited thereto. In some embodiments, the number of these film layers (or elements) can be increased or decreased depending on the situation, and is not limited to the above.

[0052] Furthermore, the stacked structure of the light-emitting elements LE can be considered as an integration of multiple light-emitting elements, wherein the light-emitting elements can be electrically connected in series, for example. In some embodiments, the light-emitting elements can be arranged side by side laterally, the charge generation layer can be excluded from the light-emitting elements, and the light-emitting elements can be electrically connected in parallel.

[0053] In some embodiments, one of the light-emitting units (e.g., the first light-emitting unit LU1, the second light-emitting unit LU2, or the third light-emitting unit LU3) may include at least one light source disposed in a light-emitting element (e.g., the first light-emitting element LE1, the second light-emitting element LE2, or the third light-emitting element LE3). The light source may include, but is not limited to, a light-emitting diode, a micro light-emitting diode, a sub-millimeter light-emitting diode, or a quantum dot light-emitting diode. In some embodiments, one of the light-converting elements (e.g., the first light-converting element LCE1, the second light-converting element LCE2, or the third light-converting element LCE3) may be disposed on the top surface of the corresponding light source. In some embodiments, one of the light-converting elements (e.g., the first light-converting element LCE1, the second light-converting element LCE2, or the third light-converting element LCE3) may be disposed on (or covered on) the top surface and / or sidewall of the corresponding light source.

[0054] In summary, based on the spectra of the first and second lights emitted by the light-emitting device, since the blue light (a sub-wavelength in the spectrum) in the first and second lights is reduced, the phenomenon of the mixed light of the first and second lights shifting toward the blue light region can be reduced. When the first and second lights are used to generate light with mixed colors, light with a yellow or yellowish hue can be obtained or provided by the light-emitting device, without the need for an additional yellow light-emitting unit in the light-emitting device. When the color space of the light-emitting device is adjusted (for example, to reduce blue light to protect the eyes), the yellow region in the color space can be preserved, which can benefit the user's visual experience.

[0055] The foregoing description is merely an embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A light emitting device, characterized in that: include: a light emitting unit emitting an outgoing light having a spectrum having a main peak between 520 nanometers and 780 nanometers and a sub-peak between 400 nanometers and 470 nanometers corresponding to a wavelength; The spectrum includes a first sub-peak integral from the wavelength minus 20 nanometers to the wavelength, the first sub-peak integral is the intensity integral of a part of a sub-waveform of the spectrum, the spectrum has an intensity integral from 521 nanometers to 780 nanometers, and the ratio of the first sub-peak integral to the intensity integral ranges from 0.05% to 2%.

2. The light emitting device according to claim 1, wherein The emitted light is red light.

3. The light emitting device according to claim 1, wherein The emitted light is green light.

4. The light emitting device according to claim 1, wherein A light conversion element is also included.

5. The light emitting device according to claim 4, characterized in that The light conversion element includes quantum dot material.

6. The light emitting device according to claim 1, wherein The spectrum includes a second sub-peak integral from the wavelength to the wavelength plus 20 nanometers, and the second sub-peak integral is the intensity integral of another part of the sub-waveform of the spectrum, and the ratio of the second sub-peak integral to the intensity integral ranges from 0.05% to 10%.

7. The light emitting device according to claim 1, wherein: The light-emitting unit includes a light-emitting element and a light-converting element disposed on the light-emitting element.

8. The light emitting device according to claim 7, characterized in that The light emitting element includes an organic light emitting material.

9. The light emitting device according to claim 7, characterized in that The light-emitting unit further includes a light modulation layer disposed between the light-emitting element and the light conversion element.

10. The light emitting device according to claim 9, characterized in that The light modulation layer includes a liquid crystal layer.

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