Dry etching apparatus and method

Abstract

Embodiments of the present application provide a dry etching device and method, wherein the dry etching device comprises a vacuum reaction chamber, a workpiece disc driven by a rotating assembly and a plasma excitation source emitting plasma to an etching area are arranged in the vacuum reaction chamber, the etching area covers the axis of the workpiece disc and is located on one side of the axis, and a plasma density correction system is arranged between the plasma excitation source and the etching area. The workpiece rotating into the etching area is etched by the uniform area of the plasma excitation source, and the workpiece disc is rotated during etching, so that the workpiece rotates around the center of the workpiece disc, and the positions on the workpiece are etched in turn through the etching area. In the embodiment, the etching area does not need to cover the entire workpiece, and only part of the workpiece can be etched to partition the workpiece, so that the volume of the device can be greatly reduced compared with the traditional dry etching system.

Description

Technical Field

[0001] This invention relates to the field of etching, and more specifically, to a dry etching apparatus and method. Background Technology

[0002] Dry etching is a technique that uses plasma to etch thin films. When gas exists in plasma form, the chemical reactivity of the gaseous free radicals in the plasma is much stronger than that of gas under normal conditions. Depending on the material being etched, a suitable gas can be selected to react with the material more quickly, achieving the purpose of etching and removal. Alternatively, an electric field can be used to guide and accelerate the plasma, giving it a certain amount of energy. When the plasma bombards the surface of the object being etched, it will eject the atoms of the material being etched, thereby achieving the purpose of etching through physical energy transfer.

[0003] Existing reactive ion etching (RIE) equipment faces challenges such as uneven etching gas distribution and poor stability when the etching area increases (above 500 mm in diameter), making it difficult to achieve uniform etching transfer of large-area micro / nano structures. Furthermore, in large cavities, the gas diffusion delay effect causes residual reactive gas to remain within the etching area, making it difficult to form a dynamically balanced, large-area uniform gas composition. This results in a significant difference in etching rates between the substrate edge and center. Therefore, reducing the volume of the etching equipment cavity helps to achieve uniform etching of the substrate.

[0004] For large-diameter workpieces, existing technologies include etching devices that allow relative movement between the plasma excitation source and the workpiece to perform partitioned etching. However, these devices also have the following problems: if the plasma excitation source is fixed and the workpiece moves, the etching cavity needs to be relatively large, with a coverage area at least twice that of the workpiece; if the workpiece is stationary and the plasma excitation source moves, the relatively complex components of the plasma excitation source require ensuring the sealing of the etching cavity during movement, which increases the processing difficulty of the etching equipment and raises the processing cost.

[0005] In view of this, the present invention is proposed. Summary of the Invention

[0006] The present invention aims to provide, for example, a dry etching apparatus and method that can reduce the size of the etching apparatus, and is particularly convenient for the processing of some large-diameter workpieces.

[0007] The embodiments of the present invention can be implemented as follows:

[0008] In a first aspect, the present invention provides a dry etching apparatus, comprising a vacuum reaction chamber, wherein a workpiece disk driven by a rotating component, an etching zone, and a plasma excitation source for emitting plasma to the etching zone are disposed within the vacuum reaction chamber, the etching zone covers the axis of the workpiece disk and is located on one side of the axis, and a plasma density correction system is disposed between the plasma excitation source and the etching zone.

[0009] In an optional embodiment, the plasma density correction system includes a correction grid and a motion component that drives the correction grid to rotate and move.

[0010] Preferably, the mesh coverage of the correction grid gradually decreases along the direction away from the axis of the workpiece disk;

[0011] Preferably, the included angle between the correction grid and the workpiece disk is 0–75°;

[0012] Preferably, the correction grid is made of metal or polymer material.

[0013] In an optional embodiment, a pressure monitoring device and a vacuum generation device are provided inside the vacuum reaction chamber;

[0014] Preferably, a pressure controller is also provided for controlling the opening diameter of the vacuum obtaining equipment valve based on the pressure monitored by the pressure monitoring device;

[0015] Preferably, the pressure controller is a PID controller;

[0016] Preferably, there are four or more vacuum generating devices, which are evenly distributed around the plasma excitation source.

[0017] In an optional embodiment, an exhaust gas treatment device is connected to the outlet of the vacuum pump, and a filter is installed inside the exhaust gas treatment device. The part of the filter that comes into contact with the exhaust gas is provided with an anti-corrosion coating.

[0018] Preferably, the anti-corrosion coating is a polytetrafluoroethylene coating.

[0019] In an optional embodiment, a temperature monitoring device and a heat exchanger are provided inside the vacuum reaction chamber;

[0020] Preferably, a temperature controller is also provided for controlling the switching of the heat exchanger based on the temperature monitored by the temperature monitoring device;

[0021] Preferably, the temperature controller is a PID controller.

[0022] In an optional embodiment, the plasma excitation source is provided with a moving component capable of moving the plasma excitation source in the X, Y, and Z directions.

[0023] All components in the plasma excitation source that come into contact with the etching gas or plasma are made of duplex stainless steel.

[0024] The distance between the plasma excitation source and the etched area in the Z-axis direction is between 20 and 100 cm.

[0025] In an optional embodiment, the rotating assembly includes a motor, a rotating shaft connected to the motor's power output shaft, and a workpiece disk mounted on the rotating shaft;

[0026] Preferably, the motor is located in the vacuum reaction chamber, and the vacuum reaction chamber is provided with a clearance hole for the shaft to pass through, and a sealing structure is provided between the clearance hole and the shaft.

[0027] In an optional embodiment, a purging device is also included, which includes an air source, an air pipe connected to the air source, and a purging port connected to the air pipe, with the purging port facing the workpiece tray.

[0028] Secondly, the present invention provides a dry etching method using the apparatus of the aforementioned embodiments, wherein the substrate to be etched is placed on a workpiece disk, the workpiece disk is driven, etching gas is introduced, and a plasma excitation source is activated to perform micro-nano etching on the substrate; before or during etching, the plasma density correction system is adjusted to correct the plasma density emitted by the plasma excitation source.

[0029] In an optional implementation, after the plasma excitation source is started and the gas pressure and plasma glow stabilize, the power of the plasma excitation source is gradually increased to a specified range to perform etching micro-nano processing on the substrate.

[0030] Preferably, before filling with etching gas, inert gas is first filled to replace the flowing atmosphere in the vacuum reaction chamber, and the filling of inert gas is stopped after the replacement is completed.

[0031] The pressure in the vacuum reaction chamber is 3×10 -2 ~3×10 -1 Pa;

[0032] Preferably, the temperature inside the vacuum reaction chamber is 80-120℃;

[0033] Preferably, the workpiece disc rotation speed is 0–50 r / min;

[0034] Preferably, after etching is completed, the purging device is turned on, and the flow rate of the purging gas is 0 to 1 scm / h.

[0035] The beneficial effects of the embodiments of the present invention include, for example:

[0036] During etching, the workpiece disk rotates, causing the workpiece to rotate around the center of the disk. This allows the workpiece to be etched sequentially through the etching zones. In this embodiment, the etching zones do not need to cover the entire workpiece; only a portion needs to be covered for partitioned etching. Compared to traditional dry etching systems, this significantly reduces the size of the device, especially for large-diameter workpieces. However, the device and method of this application can also be used for processing small-diameter workpieces, thus broadening its applicability.

[0037] This application utilizes the uniform region of the plasma excitation source to etch the workpiece that has rotated into the etching region. However, for the workpiece, the time it takes for a unit area to pass through the uniform region of the ion source decreases as the distance from the workpiece disk axis increases, which will cause non-uniformity in the etching of the workpiece. Therefore, a plasma density correction system is set between the plasma excitation source and the etching region, which can simultaneously correct the plasma density of the plasma excitation source and the plasma density at different positions of the rotating workpiece, thereby controlling the etching uniformity of the large-diameter substrate. Attached Figure Description

[0038] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the dry etching apparatus in this application.

[0040] Icons: 100-Dry etching apparatus; 110-Vacuum reaction chamber; 120-Workpiece disk; 121-Rotating assembly; 130-Plasma excitation source; 131-Gas storage tank; 140-Correction grid; 150-Pressure monitoring device; 151-Vacuum generation equipment; 152-Exhaust gas treatment device; 160-Temperature monitoring device; 161-Heat exchanger; 170-Purge device. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0042] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0043] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0044] In the description of this invention, it should be noted that if terms such as "upper," "lower," "inner," or "outer" are used to indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this invention is usually placed, they are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0045] Furthermore, the terms "first" and "second" are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0046] It should be noted that, where there is no conflict, the features in the embodiments of the present invention can be combined with each other.

[0047] Please refer to Figure 1 This embodiment provides a dry etching apparatus 100, including a vacuum reaction chamber 110. The vacuum reaction chamber 110 is provided with a workpiece disk 120 driven by a rotating component 121, an etching zone, and a plasma excitation source 130 that emits plasma to the etching zone. The etching zone covers the axis of the workpiece disk 120 and is located on one side of the axis. A plasma density correction system is provided between the plasma excitation source 130 and the etching zone.

[0048] When using the dry etching apparatus 100 provided in this embodiment, the positions of the workpiece disk 120 and the plasma excitation source 130 are first adjusted, and then the plasma density correction system is adjusted to adjust the density of the plasma emitted by the plasma excitation source 130. After the apparatus is adjusted, the workpiece is fixed on the workpiece disk 120, and then the plasma excitation source 130 is turned on for etching.

[0049] The workpiece is installed at the center of the workpiece disk 120. During etching, the workpiece disk 120 is rotated so that the workpiece rotates around the center of the workpiece disk 120 so that the previous position of the workpiece passes through the etching area in sequence for etching. In this embodiment, the etching area does not need to cover the entire workpiece. Only the part of the workpiece needs to be covered to perform partition etching on the workpiece. Compared with the traditional dry etching system, the size of the device can be greatly reduced.

[0050] The plasma generated by the plasma excitation source 130 can be considered uniform within a certain range. In this embodiment, the uniform region of the plasma excitation source 130 is mainly used to etch the workpiece that has rotated into the etching region. However, for the workpiece, the time it takes for a unit area to pass through the uniform region of the ion source decreases as the distance from the axis of the workpiece disk 120 increases, which will cause non-uniformity in the etching of the workpiece. Therefore, a plasma density correction system is set between the plasma excitation source 130 and the etching region.

[0051] Furthermore, the plasma density correction system includes a correction grid 140 and a motion component that drives the correction grid 140 to rotate and move;

[0052] Preferably, the mesh coverage of the correction grid 140 gradually decreases along the direction away from the axis of the workpiece disk 120;

[0053] Preferably, the included angle between the correction grid 140 and the workpiece disk 120 is 0 to 75°;

[0054] Preferably, the modified grid 140 is made of metal or polymer material.

[0055] The plasma density correction system in this embodiment includes a correction grid 140 with mesh openings. Plasma impacting the correction grid 140 is intercepted, but can continue to move forward through the mesh openings to the etching area to etch the workpiece. By adjusting the size and arrangement of the mesh openings, the density of plasma passing through the correction grid 140 can be adjusted. In order to effectively intercept plasma, the correction grid 140 is preferably made of metal or polymer material, preferably stainless steel.

[0056] The trajectory of the plasma generated by the plasma excitation source 130 is adjusted by setting the correction grid 140 to be rotatable, which can adjust the trajectory of the plasma and the etching speed.

[0057] Those skilled in the art can select from existing technologies for the motion components. Specifically, a rotating shaft can be set inside the vacuum reaction chamber 110, and a push rod can be set on one side of the rotating shaft to push the correction grid to rotate along the rotating shaft. The push rod can be an electric or pneumatic telescopic rod, and the angle of the correction grid 140 can be controlled by controlling the length of the telescopic rod. Alternatively, both the rotating shaft and the push rod can be set on a base, and the base can move inside the vacuum reaction chamber through a transmission structure such as a worm gear. However, care must be taken to keep the vacuum reaction chamber sealed.

[0058] As before, the time it takes for a unit area to pass through the uniform region of the ion source decreases as the distance from the axis of the workpiece disk 120 increases. In order to correct the non-uniformity caused by this position, the mesh coverage of different positions on the correction grid is also different, which can be calculated based on discrete mathematics.

[0059] In addition, it is necessary to consider that the plasma generated by the plasma excitation source 130 is not uniform in density distribution due to the non-uniformity of the magnetic field strength generated by the coil and the influence of etching gas diffusion. Typically, this non-uniformity is reflected in the fact that the plasma concentration is the highest at the source center and decreases radially along the center. Therefore, the aforementioned uniform region of the ion source is actually an approximate uniformity. If the non-uniformity of the ion source is taken into account, the correction grid needs to be "tailor-made" according to the actual situation of the plasma excitation source 130.

[0060] During the etching process, different gases need to be selected to suit workpieces of different materials. Therefore, the plasma excitation source 130 can be equipped with multiple gas storage tanks 131. The gas flow rate in the gas storage tank 131 is controlled by a gas mass flow controller (MFC).

[0061] Furthermore, a pressure monitoring device 150 and a vacuum generating device 151 are installed inside the vacuum reaction chamber 110;

[0062] Preferably, a pressure controller is also provided for controlling the valve opening diameter of the vacuum obtaining device 151 based on the pressure monitored by the pressure monitoring device 150.

[0063] Preferably, the pressure controller is a PID controller;

[0064] Preferably, there are four or more vacuum generating devices 151, which are evenly distributed around the plasma excitation source 130.

[0065] To ensure the vacuum level in the vacuum reaction chamber 110, a pressure monitoring device 150 and a vacuum acquisition device 151 are provided. When the pressure monitoring device 150 detects that the pressure in the vacuum reaction chamber 110 is too high, the vacuum acquisition device 151 is activated. In this embodiment, the pressure monitoring device 150 and the vacuum acquisition device 151 can meet the equipment requirements, and those skilled in the art can make reasonable choices from the existing technology.

[0066] The opening diameter of the vacuum obtaining device 151 can be manually controlled by the operator. However, considering that the equipment may need to operate for a long time, a pressure controller is set up to reduce the operator's workload and save manpower. When the pressure detected in the vacuum reaction chamber 110 exceeds a predetermined value, the pressure controller controls the opening diameter of the vacuum obtaining device 151 to increase the vacuuming rate; when the pressure detected in the vacuum reaction chamber 110 is within the preset value range, the pressure controller controls the opening diameter of the vacuum obtaining device 151 to decrease. The pressure controller in this embodiment can be selected from existing technologies, and only needs to have a simple function to determine whether the pressure transmitted by the pressure monitoring device 150 is within the set range and increase or decrease the vacuuming rate of the vacuum obtaining device 151 according to the determination result. Specifically, a PID controller can be used in this embodiment, which has advantages in control accuracy, response speed, system stability and adaptability; a vacuum pump of appropriate specifications can be selected for the vacuum obtaining device.

[0067] In order to reduce the disturbance to the airflow in the reaction chamber when the vacuum generating device 151 is evacuated, the vacuum generating device 151 can be distributed as evenly as possible around the plasma excitation source 130.

[0068] Furthermore, a tail gas treatment device 152 is connected to the outlet of the vacuum obtaining device 151. A filter is installed inside the tail gas treatment device 152, and an anti-corrosion coating is provided at the position where the filter contacts the tail gas.

[0069] Preferably, the anti-corrosion coating is a polytetrafluoroethylene coating.

[0070] During the etching process, different gases need to be selected to suit workpieces made of different materials. These gases are extracted from the vacuum reaction chamber 110 by the vacuum obtaining equipment 151. After a series of reactions in the vacuum reaction chamber 110, some of the gases form toxic and harmful gases or tiny particles. In order to reduce environmental pollution, an exhaust gas treatment device 152 is set up.

[0071] The exhaust gas treatment device 152 is equipped with a filter to filter out fine particles. In order to improve the service life of the filter, an anti-corrosion coating is applied.

[0072] Furthermore, a temperature monitoring device 160 and a heat exchanger 161 are installed inside the vacuum reaction chamber 110;

[0073] Preferably, a temperature controller is also provided for controlling the switching of the heat exchanger 161 based on the temperature monitored by the temperature monitoring device 160;

[0074] Preferably, the temperature controller is a PID controller.

[0075] To ensure the temperature within the vacuum reaction chamber 110 remains within a specified range, a temperature monitoring device 160 and a heat exchanger 161 are provided. When the temperature monitoring device 160 detects that the temperature within the vacuum reaction chamber 110 is too high, the heat exchanger 161 is activated to cool it down; when the temperature monitoring device 160 detects that the temperature within the vacuum reaction chamber 110 is too low, the heat exchanger 161 is activated to heat it. In this embodiment, the temperature monitoring device 160 and the heat exchanger 161 only need to meet the equipment requirements, and those skilled in the art can reasonably select them from existing technologies. Specifically, the heat exchanger can be a heating rod.

[0076] The heat exchanger 161 can be manually controlled by the operator. However, considering that the equipment may need to operate for extended periods, a temperature controller is installed to reduce the operator's workload and save manpower. When the temperature detected in the vacuum reaction chamber 110 exceeds a predetermined value, the temperature controller controls the heat exchanger 161 to activate its cooling function to lower the temperature. When the temperature detected in the vacuum reaction chamber 110 is within the preset range, the temperature controller controls the heat exchanger 161 to shut down or reduce its power. The temperature controller in this embodiment can be selected from existing technologies; it only needs to have a simple function to determine whether the temperature transmitted by the temperature monitoring device 160 is within the set range and to turn on, increase, decrease, or shut down the heat exchanger 161 based on the determination result.

[0077] Specifically, in this embodiment, a PID controller can be used, which has advantages in terms of control accuracy, response speed, system stability and adaptability.

[0078] Furthermore, the plasma excitation source 130 is provided with a moving component capable of moving the plasma excitation source 130 in the X, Y, and Z directions;

[0079] All components in the plasma excitation source 130 that come into contact with the etching gas or plasma are made of duplex stainless steel.

[0080] The distance between the plasma excitation source 130 and the etched region in the Z-axis direction is between 20 and 100 cm.

[0081] During etching, the distance between the plasma excitation source 130 and the workpiece disk 120 needs to be adjusted according to the workpiece condition. Therefore, a moving component is set up to move the plasma excitation source 130.

[0082] In this embodiment, the moving component only needs to be able to move the plasma excitation source in three-dimensional space. The specific implementation can be selected from the existing technology, and the guide rail and lead screw structure can be referred to. However, since a certain vacuum degree needs to be maintained in the vacuum reaction chamber 110, attention needs to be paid to sealing.

[0083] Furthermore, the rotating assembly 121 includes a motor, a rotating shaft connected to the motor's power output shaft, and the workpiece disk 120 is mounted on the rotating shaft;

[0084] Preferably, the motor is located in the vacuum reaction chamber 110, and the vacuum reaction chamber 110 is provided with a clearance hole for the shaft to pass through, and a sealing structure is provided between the clearance hole and the shaft.

[0085] In actual operation, the motor drives the rotating shaft to rotate, thereby driving the workpiece disk 120 to rotate. In order to facilitate the control of the motor switch, the motor is set outside the vacuum reaction chamber 110. Since a certain vacuum level needs to be maintained inside the vacuum reaction chamber 110, a sealing structure is set between the clearance hole and the rotating shaft.

[0086] The sealing structure in this embodiment can be selected from existing technologies, such as a sealed bearing.

[0087] To facilitate adjustment of the distance between the workpiece disk 120 and the plasma excitation source 130, the workpiece disk 120 can be height-adjustable. Specifically, an electric telescopic rod can be installed between the rotating shaft and the workpiece disk 120. Furthermore, a purging device 170 is also included, which includes a gas source, a gas pipe connected to the gas source, and a purging port connected to the gas pipe, with the purging port facing the workpiece disk 120.

[0088] After etching is completed, the blowing device 170 is turned on to blow the workpiece on the workpiece tray 120 to clean and cool the workpiece.

[0089] The purging area and etching area of ​​the purging device 170 can overlap or be separated, but mutual interference between the purging device 170 and the plasma excitation source 130 must be avoided.

[0090] Another embodiment of this application provides a dry etching method using the apparatus described in the foregoing embodiments. The substrate to be etched is placed on the workpiece disk 120, the workpiece disk 120 is driven, etching gas is introduced, and the plasma excitation source 130 is started to perform micro-nano etching on the substrate. Before or during etching, the plasma density correction system is adjusted to correct the plasma density emitted by the plasma excitation source.

[0091] Furthermore, after activating the plasma excitation source 130, and once the gas pressure and plasma glow are stabilized, the power of the plasma excitation source is gradually increased to a specified range to perform etching micro-nano processing on the substrate.

[0092] Preferably, before filling with etching gas, inert gas is first filled to replace the flowing atmosphere in the vacuum reaction chamber, and the filling of inert gas is stopped after the replacement is completed.

[0093] The pressure in the vacuum reaction chamber 110 is 3×10 -2 ~3×10 -1 Pa;

[0094] Preferably, the temperature inside the vacuum reaction chamber 110 is 80-120°C;

[0095] Preferably, the workpiece disc rotates at a speed of 0–50 r / min.

[0096] Preferably, after etching is completed, the purging device 170 is turned on, and the flow rate of the purging gas is 0 to 1 scm / h.

[0097] In this embodiment, a large-diameter workpiece is placed on the workpiece disk 120 at the center. By rotating the workpiece disk 120, the large-diameter workpiece gradually passes through the etching area in sections, and the large-diameter workpiece is etched in sections. The plasma density is adjusted by the plasma density correction system to reduce the non-uniformity caused by the different times that different positions of the workpiece pass through the uniform area of ​​the ion source.

[0098] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A dry etching apparatus, characterized in that, It includes a vacuum reaction chamber, in which a workpiece disk driven by a rotating component, an etching zone, and a plasma excitation source that emits plasma to the etching zone are arranged. The etching zone covers the axis of the workpiece disk and is located on one side of the axis. A plasma density correction system is arranged between the plasma excitation source and the etching zone. The plasma density correction system includes a correction grid and a motion component that drives the correction grid to rotate and move; the mesh coverage of the correction grid gradually decreases along the direction away from the axis of the workpiece disk.

2. The dry etching apparatus according to claim 1, characterized in that, The angle between the correction grid and the workpiece disk is 0~75°.

3. The dry etching apparatus according to claim 2, characterized in that, The modified grid is made of metal or polymer material.

4. The dry etching apparatus according to claim 1, characterized in that, The vacuum reaction chamber is equipped with a pressure monitoring device and a vacuum generation device.

5. The dry etching apparatus according to claim 4, characterized in that, It is also equipped with a pressure controller for controlling the opening diameter of the valve of the vacuum acquisition equipment based on the pressure monitored by the pressure monitoring device.

6. The dry etching apparatus according to claim 4, characterized in that, The pressure controller is a PID controller.

7. The dry etching apparatus according to claim 4, characterized in that, There are four or more vacuum-generating devices, which are evenly distributed around the plasma excitation source.

8. The dry etching apparatus according to claim 4, characterized in that, The exhaust gas treatment device is connected to the outlet of the vacuum obtaining equipment. The exhaust gas treatment device is equipped with a filter, and the part of the filter that comes into contact with the exhaust gas is provided with an anti-corrosion coating.

9. The dry etching apparatus according to claim 8, characterized in that, The anti-corrosion coating is a polytetrafluoroethylene coating.

10. The dry etching apparatus according to claim 1, characterized in that, The vacuum reaction chamber is equipped with a temperature monitoring device and a heat exchanger.

11. The dry etching apparatus according to claim 10, characterized in that, It is also equipped with a temperature controller for controlling the switching of the heat exchanger based on the temperature monitored by the temperature monitoring device.

12. The dry etching apparatus according to claim 10, characterized in that, The temperature controller is a PID controller.

13. The dry etching apparatus according to claim 1, characterized in that, The plasma excitation source is equipped with a moving component that can drive the plasma excitation source to move in the X, Y, and Z directions.

14. The dry etching apparatus according to claim 13, characterized in that, All components in the plasma excitation source that come into contact with the etching gas or plasma are made of duplex stainless steel.

15. The dry etching apparatus according to claim 13, characterized in that, The distance between the plasma excitation source and the etched area in the Z-axis direction is between 20 and 100 cm.

16. The dry etching apparatus according to claim 1, characterized in that, The rotating assembly includes a motor, a rotating shaft connected to the motor's power output shaft, and the workpiece disk is mounted on the rotating shaft.

17. The dry etching apparatus according to claim 16, characterized in that, The motor is located in the vacuum reaction chamber, which is provided with a clearance hole for the shaft to pass through, and a sealing structure is provided between the clearance hole and the shaft.

18. The dry etching apparatus according to claim 1, characterized in that, It also includes a purging device, which includes an air source, an air pipe connected to the air source, and a purging port connected to the air pipe, with the purging port facing the workpiece tray.

19. A dry etching method using the apparatus according to any one of claims 1-18, characterized in that, The substrate to be etched is placed on the workpiece disk, the workpiece disk is driven, etching gas is introduced, and the plasma excitation source is started to perform micro-nano etching on the substrate; before or during etching, the plasma density correction system is adjusted to correct the plasma density emitted by the plasma excitation source.

20. The dry etching method according to claim 19, characterized in that, After the plasma excitation source is activated and the gas pressure and plasma glow stabilize, the power of the plasma excitation source is gradually increased to the specified range to perform etching micro-nano processing on the substrate.

21. The dry etching method according to claim 20, characterized in that, Before filling with etching gas, inert gas is first filled to replace the flowing atmosphere in the vacuum reaction chamber. After the replacement is completed, the filling of inert gas is stopped. The pressure in the vacuum reaction chamber is 3 × 10⁻⁶. -2 ~3×10 -1 Pa.

22. The dry etching method according to claim 20, characterized in that, The temperature inside the vacuum reaction chamber is 80-120℃.

23. The dry etching method according to claim 20, characterized in that, The workpiece disc rotation speed is 0.01~50 r / min.

24. The dry etching method according to claim 20, characterized in that, After etching is completed, turn on the purging device and the flow rate of the purging gas is 0.01~1scm / h.

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