Device for emitting radiation and projector equipped with such device

Abstract

In at least one embodiment, a device (100) for emitting radiation comprises an optoelectronic device (1) for emitting a first electromagnetic radiation, a conversion element (2) having an incident surface (20) and an exit surface (21), and a dielectric mirror (3) located on the exit surface. The device is configured such that, during operation, the first radiation emitted by the device enters the conversion element through the incident surface. The conversion element is designed to convert the first radiation into a second electromagnetic radiation, which then exits the conversion element through the exit surface. The dielectric mirror is transmissive for the second radiation incident at an angle of incidence within a predefined first range and reflective for the second radiation incident at an angle of incidence within a predefined second range.

Description

[0001] A device for emitting radiation is proposed. A projector is also proposed.

[0002] The object to be achieved is: to propose a device for emitting radiation with high brightness. Another object to be achieved is: to propose a projector including such a device for emitting radiation.

[0003] According to at least one embodiment, the device for emitting radiation includes an optoelectronic device for emitting a first electromagnetic radiation. For this purpose, the device particularly includes a semiconductor body having an active region. The first radiation is primary radiation generated in the active region and / or secondary radiation generated by converting the primary radiation in the device.

[0004] The semiconductor body of the device is based on, for example, a group III-V compound semiconductor material. The semiconductor material is, for example, a nitride compound semiconductor material such as Al n In 1-n-m Ga m N or also a phosphide compound semiconductor material such as Al n In 1-n-m Ga m P, or also an arsenide compound semiconductor material such as Al n In 1-n-m Ga m As or Al n In 1-n-m Ga m AsP, where in each case 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n + m ≤ 1. Here, the semiconductor body can have dopants and additional components. However, for simplicity, only the main components of the lattice of the semiconductor body are illustrated, namely Al, As, Ga, In, N or P, even when these main components can be partially replaced and / or supplemented by small amounts of other substances. Preferably, the semiconductor body is based on AlInGaN.

[0005] The active region of the semiconductor body particularly includes at least one pn junction and / or at least one quantum well structure in the form of a single quantum well, abbreviated as SQW, or in the form of a multi-quantum well structure, abbreviated as MQW. For example, in normal operation, the active region generates primary electromagnetic radiation in the blue or green or red spectral range or in the UV range or in the IR range.

[0006] The optoelectronic component is, for example, a semiconductor chip or a so-called chip-scale package device. In both the case of the semiconductor chip and the case of the chip-scale package device, its lateral dimension (measured parallel to the main extension plane of the semiconductor body) substantially corresponds to the lateral dimension of the semiconductor body. In particular, the lateral dimension of the device is at most 20% or at most 10% or at most 5% larger than the lateral dimension of the semiconductor body. The side surfaces of the device extending transversely to the main extension plane may have traces of a dicing process resulting from dicing from a wafer composite. In the chip-scale package device, the side surfaces are made of a potting material such as epoxy resin.

[0007] The first radiation generated and emitted by the device during operation is in particular incoherent radiation. The device is in particular a light-emitting diode (LED) or a light-emitting diode chip (LED chip).

[0008] The device may be without a growth substrate on which the semiconductor body grows. Thus, the device is in particular a thin-film chip or a device having a thin-film chip.

[0009] The device may be pixelated such that the semiconductor body includes a plurality of individual and independently controllable emission regions (pixels). For example, the semiconductor body is divided into at least four or at least ten or at least 50 emission regions.

[0010] According to at least one embodiment, the device emitting radiation includes a conversion element having an incident surface and an exit surface. The incident surface and the exit surface are preferably opposite each other and substantially parallel to each other. The conversion element can in particular be implemented in a layered manner, where the incident surface and the exit surface then form the main sides of the lamina. The thickness of the conversion element, measured as the distance between the incident surface and the exit surface, is for example at least 10 μm and / or at most 1 mm.

[0011] The conversion element comprises one or more conversion materials or consists of one or more conversion materials. For example, the conversion element is a ceramic conversion element. However, alternatively, the conversion element may also include a matrix material, for example a matrix material made of silicone resin or polysiloxane, in which a particulate distribution of one or more conversion materials is embedded. The conversion material can be, for example, a garnet or a nitride or an oxide or a oxynitride.

[0012] According to at least one embodiment, the device emitting radiation includes a dielectric mirror located on the exit surface. The dielectric mirror is, for example, a periodic structure, i.e. a Bragg mirror, or an aperiodic structure.

[0013] The dielectric mirror can be arranged directly on the exit surface or fixed indirectly on the exit surface. The distance between the dielectric mirror and the exit surface is preferably less than the thickness of the conversion element.

[0014] The dielectric mirror preferably comprises a plurality of dielectric layers, for example at least two or at least four or at least ten or at least 50 or at least 100 dielectric layers, which are stacked on top of one another relative to the exit surface. For example, the dielectric layers of the dielectric mirror alternately have a high refractive index and a low refractive index. Here, the refractive index of the high refractive index layer differs from the refractive index of the low refractive index layer by at least 0.1 or at least 0.3 or at least 0.5 or at least 1.0. For example, the refractive index of the low refractive index layer is at most 2. For example, the high refractive index layer has a refractive index of at least 2.3. Here, the value of the refractive index is stated for the first radiation.

[0015] For example, in the dielectric mirror, the dielectric layers alternate in such a way that there is one low refractive index layer between every two high refractive index layers and vice versa. In a periodic structure, the thicknesses of all the dielectric layers are equal within the manufacturing tolerances. In an aperiodic structure, the thicknesses of the dielectric layers are different.

[0016] The low refractive index layer comprises, for example, at least one of the following materials or consists of at least one of the following materials: SiO2, SiN, SiON, MgF2. The high refractive index layer comprises, for example, at least one of the following materials or consists of at least one of the following materials: Nb2O5, TiO2, ZrO2, HfO2, Al2O3, Ta2O5, ZnO. The thicknesses of the dielectric layers are, for example, each between 10 nm and 300 nm, including the end values.

[0017] Viewed in a top view, the dielectric mirror covers the vast majority of the exit surface of the conversion element, for example covers at least 80%, or completely covers it.

[0018] According to at least one embodiment, the device is configured such that, during operation, the first radiation emitted by the device enters the conversion element via the entrance surface. For example, the device is configured such that most of the first radiation emitted by the device, for example at least 75% or at least 90%, impinges on the entrance surface. Then, the first radiation enters the interior of the conversion element via the entrance surface.

[0019] According to at least one embodiment, the conversion element is configured to convert the first radiation into a second electromagnetic radiation. Then the second radiation exits the conversion element via the exit surface.

[0020] The second radiation is redshifted relative to the first radiation. For example, the wavelength of the second radiation having a global intensity maximum is redshifted by at least 50 nm or at least 100 nm relative to the wavelength of the first radiation having a global intensity maximum. The second radiation is preferably also radiation in the visible spectral range. For example, the first radiation is blue light and the second radiation is green light.

[0021] The conversion element is configured to partially or fully convert the incident first radiation. After the conversion, at least a majority, for example at least 75% or at least 90%, of the generated second radiation exits the conversion element via the exit surface.

[0022] According to at least one embodiment, the dielectric mirror is transmissive for the second radiation incident on the dielectric mirror at an incident angle within a predefined first angular range and is reflective for the second radiation incident on the dielectric mirror at an incident angle within a predefined second angular range. The dielectric mirror may be reflective or transmissive for the first radiation at all incident angles. The first angular range and the second angular range preferably do not overlap.

[0023] The incident angle is measured here as the angle with respect to the normal of the dielectric mirror. The normal of the dielectric mirror is to be understood as the normal of the main extension plane of the dielectric mirror.

[0024] Here and hereinafter, "transmissive" is understood to mean that the element transmits or passes at least 75%, preferably at least 90%, particularly preferably at least 99% of the radiation. "Reflective" is understood to mean that the element reflects more than 75%, preferably at least 90%, particularly preferably at least 99% of the radiation.

[0025] The terms "predefined first angular range" and "predefined second angular range" mean that in the design of the dielectric mirror, by selecting the dielectric layer material and the dielectric layer thickness, the angular range for which the dielectric mirror is transmissive and the angular range for which it is reflective can be precisely set as required. In this regard, the angular ranges for transmission and reflection can be preset or selected or determined.

[0026] Since the dielectric mirror is typically optimized for one wavelength or a narrow range of wavelengths near that wavelength, the indications given here and below regarding the reflection and transmission of the mirror relate in particular to the wavelength at which the radiation has a global intensity maximum.

[0027] In at least one embodiment of a device for emitting radiation, the device includes an optoelectronic device for emitting a first electromagnetic radiation, a conversion element having an incident surface and an exit surface, and a dielectric mirror located on the exit surface. The device is configured such that during operation, the first radiation emitted by the device enters the conversion element via the incident surface. The conversion element is configured to convert the first radiation into a second electromagnetic radiation, which then exits the conversion element via the exit surface. The dielectric mirror is transmissive for the second radiation incident at an incident angle within a predefined first angular range and is reflective for the second radiation incident at an incident angle within a predefined second angular range.

[0028] The present invention is based on the following insight: For projection applications, as high a brightness as possible is required in the application. In this case, only the radiation in the delimited cone defined mainly by the optical system downstream of the conversion element can be used. A radiation source with as narrow an angular emission characteristic as possible, for example achieved by the current combination of a device, a conversion element, and a dielectric mirror, can provide a higher brightness in the application. Since in this case, hardly any radiation is emitted into the solid angle and cannot be used in the application or even interfere with it, better imaging quality can be obtained with less scattered light. Thus, the device as a whole, in particular the optical system arranged downstream of the conversion element, is heated to a lesser extent by absorbing the radiation that cannot be used in the application.

[0029] Especially for projection solutions with LEDs, green light is usually generated in the conversion element to fully convert blue light. Therefore, an improvement in the emission characteristics obtained upstream of the conversion element, for example at the device level, cannot be fully utilized for green light. The present invention improves the emission characteristics downstream of the radiation conversion, whereby the device is particularly suitable for generating green light in projection applications.

[0030] According to at least one embodiment, the first angular range includes all the incident angles between 0° and α - including the end values - measured with respect to the normal of the dielectric mirror. The first angular range forms a cone with the normal as the axis of rotation and an opening angle of 2α. For example, α has a value of at most 75° or at most 60° or at most 45° or at most 30° or at most 20° or at most 10°. Alternatively or additionally, for example, the value of α is at least 5° or at least 10°.

[0031] According to at least one embodiment, the second angular range includes all the incident angles that are at least β measured with respect to the normal of the dielectric mirror, where β ≥ α applies. Preferably, β is at least 1° or at least 5° or at least 10° larger than α. Alternatively or additionally, β is at most 10° or at most 5° larger than α. The second angular range preferably includes all the incident angles between β and 90° - including the end values.

[0032] According to at least one embodiment, the dielectric mirror has a transmittance of at least 75% or at least 90% or at least 99% for the second radiation incident at the incident angles within the first angular range and a reflectance of at least 75° or at least 90% or at least 99% for the second radiation incident at the incident angles within the second angular range. The stated values for the transmittance and reflectance of the second radiation particularly preferably apply to all the incident angles within the respective angular ranges.

[0033] According to at least one embodiment, the conversion element is configured to fully convert the first radiation into the second radiation. In particular, then, at least 95% or at least 99% of the radiation exiting the conversion element via the exit surface during normal operation of the device is the second radiation and at most 5% or at most 1% is the first radiation.

[0034] According to at least one embodiment, the device emitting radiation further comprises an optical element, which is arranged downstream of the conversion element and the dielectric mirror and is configured to deflect the second radiation. The optical element can be a lens or a lens system or a prism or a prism system or a beam splitter or a (semi-transparent) mirror or a combination of two or more of said elements. In particular, the optical element is configured to guide the second radiation emerging from the conversion element through the dielectric mirror to a projection surface, for example, on a projection screen, via the exit surface.

[0035] According to at least one embodiment, the conversion element has scattering centers for redistributing the radiation reflected back from the dielectric mirror into the conversion element.

[0036] The scattering centers can be scattering particles distributed in the conversion element. For example, the scattering particles are particles composed of oxides or nitrides or phosphides, such as particles composed of TiO2 or SiN or Al2O3. Alternatively or additionally, the scattering centers can be realized by region boundaries in the conversion element. The region boundaries can be deliberately generated by foreign phases or pores during sintering of the conversion element. For example, this is achieved by variants in the slurry mixture and by the selected process control.

[0037] However, alternatively or in addition to the scattering centers inside the conversion element, the exit surface and / or the entrance surface of the conversion element can also be structured. Then, the average roughness of the entrance surface and / or the exit surface is, for example, at least 200 nm or at least 500 nm or at least 1000 nm. A planarization layer can be applied to the structured exit surface and / or entrance surface, which is planar and / or smooth on the side facing away from the conversion element. Here, the planarization layer can be applied directly to the exit surface and / or the entrance surface. The planarization layer preferably comprises a material that is transmissive to the first and / or second radiation, i.e., for example, silica (SiO2). The planarization layer simplifies and improves the application of the dielectric mirror.

[0038] According to at least one embodiment, a second mirror is arranged on the entrance surface of the conversion element. The second mirror can be arranged directly on the entrance surface or indirectly fixed to the entrance surface. For example, the distance between the second mirror and the entrance surface is at most the thickness of the conversion element. The second mirror is particularly arranged such that the first radiation from the device passes through the second mirror before entering the conversion element.

[0039] The second mirror can be a dielectric mirror and can then have a plurality of dielectric layers as described for the dielectric mirror before. All features disclosed in connection with the dielectric mirror in terms of its construction are disclosed for the second mirror. When observed in a top view of the entrance surface, the second mirror preferably covers most of the entrance surface, for example, at least 80%, or the entire entrance surface. The dielectric mirror described previously on the exit surface can also be referred to as the first dielectric mirror hereinafter.

[0040] According to at least one embodiment, the second mirror is reflective for the second radiation and transmissive for the first radiation. This preferably applies to all angles of incidence. This can prevent the second radiation generated in the conversion element from leaving the conversion element via the incident surface.

[0041] According to at least one embodiment, the third mirror is arranged on the exit surface. The third mirror is preferably arranged between the (first) dielectric mirror and the exit surface. Alternatively, the third mirror can also be arranged on the side of the (first) dielectric mirror facing away from the conversion element.

[0042] The third mirror can be arranged directly on the exit surface or fixed indirectly on the exit surface. When observed in a top view, the third mirror preferably covers most of the exit surface, for example at least 80% of the exit surface or the entire exit surface.

[0043] The third mirror can be a dielectric mirror and can then have a plurality of dielectric layers as described for the dielectric mirror before. All features disclosed regarding its construction in connection with the dielectric mirror are also disclosed for the third mirror.

[0044] According to at least one embodiment, the third mirror is reflective for the first radiation. This preferably applies to all angles of incidence. By means of this third mirror, it is prevented that the unconverted first radiation leaves the conversion element via the exit surface. Furthermore, the third mirror is transmissive for the second radiation, preferably for all angles of incidence or only for angles of incidence within a first angular range.

[0045] According to at least one embodiment, the dielectric mirror is reflective for the first radiation. Then, this preferably applies to all angles of incidence.

[0046] According to at least one embodiment, the conversion element is arranged at a distance from the device. Then, during operation of the device, the first radiation from the device first passes through air or an optical conductor for a certain distance before hitting the conversion element. In other words, the conversion element is a so-called remote conversion element.

[0047] According to at least one embodiment, the conversion element is arranged directly or indirectly on the device. For example, when observed in a top view, the conversion element covers most of the emission surface of the device, for example at least 80% or 100%, and during operation, most of the first radiation is coupled out of the device via the emission surface. For example, the distance between the semiconductor body of the conversion element and the device is approximately the same as the thickness of the conversion element.

[0048] According to at least one embodiment, the device emitting radiation includes a second optoelectronic device for emitting a third electromagnetic radiation. Similar to the previously described device, sometimes also referred to as the first device hereinafter, the second device can be a semiconductor chip, in particular an LED chip, or a chip-scale package device, such as a light-emitting diode. In particular, the second device also includes a semiconductor body having an active region in which primary radiation is generated during operation, and the primary radiation then forms the third radiation after possible conversion in the device. All features associated with this optoelectronic device are also disclosed for the second optoelectronic device.

[0049] The third radiation emitted by the second device can largely overlap with the first radiation or be substantially the same as the first radiation. In particular, the third radiation is preferably light of the same color as in the first radiation. The semiconductor body of the second device can be based on the same material system and / or be generally substantially the same in structure as the semiconductor body of the first device. The first device and the second device preferably emit blue light respectively.

[0050] According to at least one embodiment, the device is configured such that during operation, the third radiation emitted by the second device enters the conversion element through the exit surface of the conversion element. This means that the conversion element is illuminated on both sides.

[0051] According to at least one embodiment, the conversion element is configured to convert the third radiation. The third radiation is preferably converted into the second radiation. The conversion element is configured to completely convert the third radiation. Generally speaking, in this way, the brightness can be increased and more of the second radiation can be generated.

[0052] According to at least one embodiment, the dielectric mirror is transmissive to the third radiation. The dielectric mirror is preferably transmissive to the third radiation at all angles of incidence. Thus, in particular, no element that reflects the third radiation is provided on the exit surface, so that the third radiation can enter the conversion element as unobstructed as possible.

[0053] According to at least one embodiment, an anti-reflection coating for the third radiation is coated on the exit surface. The anti-reflection coating is preferably configured such that at most 10% or at most 5% of the third radiation is reflected by the anti-reflection coating and at least 90% or at least 95% passes through the anti-reflection coating.

[0054] Furthermore, a projector is proposed. In particular, the projector includes the device emitting radiation as described herein. The device emitting radiation is then preferably configured such that it emits green light. This means that the second radiation is preferably green light.

[0055] In addition, the projector may include one or more optoelectronic devices that generate other colors, such as red light and blue light, during operation. In particular, the projector additionally includes an optoelectronic device for generating red light and an optoelectronic device for generating blue light. These two optoelectronic devices can inherently generate the corresponding light in a semiconductor body without using conversion elements. The red light and blue light from the other two optoelectronic devices and the green light from the conversion element can be projected onto a projection surface, in particular a projection screen, via a common optical element or different optical elements. The one or more optical elements include, for example, an image generation element, such as a so-called digital mirror device, abbreviated as DMD, and / or a lens system and / or a mirror system.

[0056] Other advantages and advantageous configurations and refinements of the device emitting radiation result from the embodiments shown below in conjunction with the figures. Identical, same-type or functionally identical elements have the same reference numerals in the figures. The size ratios between the figures and the elements shown therein should not be regarded as drawn to scale. Instead, individual elements, in particular layer thicknesses, may be represented in enlarged dimensions for better illustration and / or better understanding.

[0057] The figures show:

[0058] Figures 1 to 6 show different embodiments of a device emitting radiation,

[0059] Figure 7 show an embodiment of a projector.

[0060] Figure 1 Show a first embodiment of a device 100 emitting radiation. The device 100 includes an optoelectronic device 1, currently a light-emitting diode (LED), which emits a first radiation in the form of blue light during operation.

[0061] A layered conversion element 2 including an incident surface 20 and an exit surface 21 is arranged downstream of the device 1 in the beam direction. The conversion element 2 is, for example, a ceramic conversion element made of sintered conversion material. The first radiation from the device 1 enters the conversion element 2 through the incident surface 20 and is partially or completely converted into a second radiation, such as green light, in the conversion element. Then, the second radiation can exit the conversion element 2 through the exit surface 21.

[0062] The dielectric mirror 3 is arranged on the exit surface 21. The dielectric mirror comprises a plurality of dielectric layers with different refractive indices. The dielectric mirror 3 is configured such that it is transmissive for the second radiation incident at an angle of incidence within a first angular range between 0° and α (including the end values), and is reflective for the second radiation incident at an angle of incidence within a second angular range outside the first angular range (from β to 90°). Currently, the value of α is, for example, 30°. The value of β is, for example, 35°. The dielectric mirror 3 can be reflective for the first radiation, regardless of the angle of incidence.

[0063] The optical element 4 is arranged downstream of the conversion element 2 in the beam direction. In this example, the optical element 4 is a mirror for deflecting the radiation passing through the dielectric mirror 3. For example, the second radiation is guided onto a projection surface such as a projection screen. The illustrated device 100 can be used in a projector. By means of the angle-selective dielectric mirror 3, the second radiation (green light) is emitted within a small angular range, whereby the device 100 described is particularly suitable for projection applications.

[0064] Figure 2 A second embodiment of the device 100 emitting radiation is shown. The second embodiment differs from the embodiment in Figure 1 in that the conversion element 2 comprises scattering centers in the form of scattering particles. By means of the scattering centers, the radiation reflected back by the dielectric mirror 3 is scattered and redistributed such that it may strike the dielectric mirror 3 within the first angular range when it strikes the dielectric mirror 3 again. The scattering particles can be evenly distributed in the conversion element 2. The scattering particles are, for example, scattering holes in a ceramic converter.

[0065] Instead of or in addition to the scattering centers in the form of scattering particles within the conversion element, the entrance surface 20 and / or the exit surface 21 can also be structured, thereby achieving a redistribution of the reflected-back radiation.

[0066] Figure 3 A third embodiment of the device 100 emitting radiation is shown. Here, compared with the embodiment of Figure 2 , a second dielectric mirror 5 is arranged on the entrance surface 20 of the conversion element 2. The second dielectric mirror 5 also comprises a plurality of dielectric layers. The second dielectric mirror 5 is reflective for the second radiation and transmissive for the first radiation. This preferably applies to all angles of incidence. This can prevent the second radiation from leaving the conversion element 2 again via the entrance surface 20.

[0067] Figure 4 A fourth embodiment of the device 100 emitting radiation is shown. Here, in addition to Figure 3In addition to the solutions in the embodiments, the third dielectric mirror 6 is arranged on the exit surface 21 between the dielectric mirror 3 and the exit surface 21. The third dielectric mirror 6 is reflective for the first radiation and transmissive for the second radiation, preferably independently of the angle of incidence. This prevents the first radiation from leaving the conversion element 2 via the exit surface 21.

[0068] Instead of the second dielectric mirror 5 and the third dielectric mirror 6 having a plurality of dielectric layers, another second mirror and third mirror with desired properties can also be used. For example, such a second mirror and such a third mirror each include a plurality of dielectric layers.

[0069] In Figure 5 A fifth embodiment of the device 100 emitting radiation is shown. Here, different from the previous embodiments, the conversion element 2 is not arranged at a certain distance from the optoelectronic device 1. More precisely, the conversion element 2 is arranged and indirectly fixed to the device 1 here.

[0070] Figure 6 A sixth embodiment of the device 100 emitting radiation is shown. Here, the device 100 includes, in addition to the first optoelectronic device 1, a second optoelectronic device 11 emitting a third radiation. In this example, the third radiation is also blue light. The device 100 is configured such that the third radiation emitted by the second device 11 enters the conversion element 2 via the exit surface 21 of the conversion element 2. Before that, the third radiation passes through the optical element 4, which is formed by a semi-transparent mirror in this example. In order to be able to enter the conversion element 2, in this example, the dielectric mirror 3 is transmissive for the third radiation, preferably transmissive at all angles of incidence.

[0071] In order to reduce the reflection of the third radiation at the dielectric mirror 3, an anti-reflection coating 7 for the third radiation is applied on the side of the dielectric mirror 3 facing away from the conversion element 2.

[0072] Figure 7 Shows an embodiment of a projector of the device 100 emitting radiation including Figure 1 The device 100 emitting radiation generates green light by conversion. In addition, the projector includes a third optoelectronic device 12 (in the form of a light-emitting diode in this example) that inherently generates blue light and a fourth optoelectronic device 13 (also in the form of a light-emitting diode) that inherently generates red light. Each device 1, 12, 13 is assigned a mirror for deflecting the respective light. The mirror is particularly transmissive for the radiation of the previous device. Thus, for example, the mirror associated with the device 1 emitting green light is transmissive for blue light and reflective for green light. The mirror associated with the device 13 emitting red light is preferably transmissive for blue light and green light and reflective for red light. The projector also includes a lens 40, by means of which the light is projected onto a projection screen 8.

[0073] This application claims the priority of German Patent Application No. 102020204540.2, which is incorporated herein by reference.

[0074] The present invention is not limited to the description according to the embodiments. Rather, the present invention includes each new feature and any combination of features, in particular any combination of features contained in the claims, even if such features or combinations thereof are not explicitly stated in the claims or in the embodiments.

[0075] Description of Reference Numerals

[0076] 1 (first) optoelectronic device

[0077] 2 conversion element

[0078] 3 (first) dielectric mirror

[0079] 4 optical element

[0080] 5 second dielectric mirror

[0081] 6 third dielectric mirror

[0082] 7 antireflection coating

[0083] 8 projection screen

[0084] 11 second optoelectronic device

[0085] 12 third optoelectronic device

[0086] 13 fourth optoelectronic device

[0087] 20 incident surface

[0088] 21 exit surface

[0089] 40 lens

[0090] 100 device for emitting radiation

[0091] α angle

[0092] β angle

Claims

1. A radiation-emitting device (100), comprising - a optoelectronic device (1) for emitting a first radiation, - a conversion element (2) having an incident surface (20) and an exit surface (21), - a dielectric mirror (3) located on the exit surface (21), wherein - the device is configured such that during operation, the first radiation emitted by the device (1) enters the conversion element (2) through the incident surface (20), - the conversion element (2) is configured to convert the first radiation into a second radiation, which then exits the conversion element (2) through the exit surface (21), - the dielectric mirror (3) is transmissive to the second radiation incident at an incident angle within a predefined first angle range and reflective to the second radiation incident at an incident angle within a predefined second angle range; The radiation-emitting device (100) further comprises: - a second optoelectronic device (11) for emitting a third radiation, wherein - the radiation-emitting device (100) is configured such that during operation, the third radiation emitted by the second optoelectronic device (11) enters the conversion element (2) through the exit surface (21) of the conversion element (2), - the conversion element (2) is configured to convert the third radiation, - the dielectric mirror (3) is transmissive to the third radiation; An anti-reflection coating (7) for the third radiation is coated on the exit surface (21).

2. The radiation-emitting device (100) according to claim 1, wherein - the first angle range includes all incident angles between 0° and α - including the end values - measured with respect to the normal of the dielectric mirror (3), [[ID= ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 8. The radiation-emitting device (100) according to claim 1 or 2, wherein the dielectric mirror (3) is reflective for the first radiation.

9. The radiation-emitting device (100) according to claim 1 or 2, wherein the conversion element (2) is arranged at a distance from the device (1) such that, during operation, the first radiation from the device (1) first passes through air for a certain distance before impinging on the conversion element (2).

10. The radiation-emitting device (100) according to claim 1 or 2, wherein the conversion element (2) is arranged directly or indirectly on the device (1).

11. A projector comprising the radiation-emitting device (100) according to any one of claims 1 - 10.

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