Display panel, preparation method thereof and display device

Abstract

Embodiments of the present application provide a display panel, a preparation method thereof and a display device. The display panel comprises: a substrate, having a display area and a peripheral area; an anode layer, located in the display area, the anode layer comprising a first metal layer and a first transparent conductive layer stacked; a separation wall, located in the peripheral area, the separation wall comprising a second metal layer and a second transparent conductive layer stacked; wherein the anode layer and the separation wall are arranged at intervals, and the thickness of the second metal layer is greater than the thickness of the first metal layer. In the embodiments of the present application, the first metal layer is prepared first, and then the second metal layer is prepared, so that the second transparent conductive layer is located on the side of the first transparent conductive layer away from the substrate, and the thickness of the second metal layer is greater than the thickness of the first metal layer; the order of magnitude of the particles generated on the surface of the first metal layer is also reduced with the decrease of the thickness of the first metal layer, thereby the risk of short circuit of the anode and the cathode caused by the particles can be reduced, and the display panel can be improved to be less likely to have display defects such as dark spots.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) have many advantages, such as high brightness, high efficiency, wide viewing angle, self-emissive, all-solid-state, ultra-thin and ultra-lightweight, simple manufacturing process, fast response speed, full-color display capability, and good machinability, allowing them to be made into displays of different shapes.

[0003] However, the anode region of current OLED devices contains a large number of particles, which pose a risk of short circuit between the anode and cathode, making OLED devices prone to display defects such as dark spots.

[0004] In summary, OLED devices based on related technologies have a technical problem that makes them prone to dark spots. Summary of the Invention

[0005] This application addresses the shortcomings of existing methods by proposing a display panel, its fabrication method, and a display device to solve the technical problem of dark spots easily appearing in OLED devices of related technologies.

[0006] In a first aspect, embodiments of this application provide a display panel, including:

[0007] The substrate has a display area and a peripheral area located outside the display area;

[0008] An anode layer, located in the display area, includes a first metal layer and a first transparent conductive layer stacked on one side of the substrate.

[0009] An isolation wall, located in the peripheral region, includes a second metal layer and a second transparent conductive layer stacked on one side of the substrate.

[0010] The anode layer and the isolation wall are arranged at intervals, and the thickness of the second metal layer in the direction perpendicular to the substrate is greater than the thickness of the first metal layer in the direction perpendicular to the substrate.

[0011] In some embodiments of this application, the orthographic projection of the second metal layer on the substrate is the first projection, and the orthographic projection of the second transparent conductive layer on the substrate is the second projection, with the second projection covering the first projection.

[0012] In some embodiments of this application, the distance between one end of the second projection and one end of the first projection is not less than 0.5 micrometers and not more than 1 micrometer.

[0013] In some embodiments of this application, the orthographic projection of the first metal layer on the substrate is a third projection, and the orthographic projection of the first transparent conductive layer on the substrate is a fourth projection, with the fourth projection covering the third projection.

[0014] In some embodiments of this application, the thickness of the second metal layer in the direction perpendicular to the substrate is not less than 5000 angstroms, and the thickness of the first metal layer in the direction perpendicular to the substrate is not greater than 1500 angstroms.

[0015] In some embodiments of this application, at least one of the second metal layer and the first metal layer is made of aluminum;

[0016] The material of at least one of the second transparent conductive layer and the first transparent conductive layer includes indium tin oxide.

[0017] Secondly, this application provides a display device including a display panel as described in any of the embodiments of the first aspect.

[0018] Thirdly, this application provides a method for manufacturing a display panel, used to manufacture a display panel as described in any of the embodiments of the first aspect, comprising the following steps:

[0019] A first metal layer and a first transparent conductive layer are sequentially fabricated in the display area of ​​the substrate to form an anode layer;

[0020] An initial second metal layer and an initial second transparent conductive layer are sequentially formed in the peripheral region of the substrate and on the side of the first transparent conductive layer away from the substrate.

[0021] The initial second transparent conductive layer is patterned to form the second transparent conductive layer, and the orthographic projection of the second transparent conductive layer onto the substrate is located in the peripheral region;

[0022] The initial second metal layer is patterned to form the second metal layer. The orthogonal projection of the second metal layer onto the substrate is located in the peripheral region. The second metal layer and the second transparent conductive layer form an isolation wall.

[0023] In some embodiments of this application, patterning the initial second transparent conductive layer includes:

[0024] A first photoresist layer is prepared on the side of the initial second transparent conductive layer away from the substrate.

[0025] The initial second transparent conductive layer not covered by the first photoresist material layer is etched, while the initial second transparent conductive layer covered by the first photoresist material layer is retained to form the second transparent conductive layer.

[0026] Patterning of the initial second metal layer, followed by:

[0027] Remove the first photoresist layer.

[0028] In some embodiments of this application, patterning the initial second metal layer includes:

[0029] The initial second metal layer not covered by the second transparent conductive layer is etched, while the initial second metal layer covered by the second transparent conductive layer is retained, to form the second metal layer.

[0030] The beneficial technical effects of the technical solutions provided in this application include:

[0031] The display panel provided in this application embodiment can be fabricated by first preparing a first metal layer and then preparing a second metal layer in different steps. Different thicknesses can be set for the first and second metal layers, such that the second transparent conductive layer is located on the side of the first transparent conductive layer away from the substrate, and the thickness of the second metal layer is greater than that of the first metal layer. Compared to display panels in related technologies, the thickness of the first metal layer is reduced. Since the number of particles generated on the metal surface decreases with decreasing metal layer thickness during fabrication, and in this embodiment, the number of particles generated on the surface of the first metal layer also decreases with decreasing thickness, the risk of short circuits between the anode and cathode caused by particulate matter can be reduced, improving the display panel's ability to produce dark spots and other display defects. Additional aspects and advantages of this application will be set forth in part in the description which follows, and will be obvious from the description, or may be learned by practice of the application. Attached Figure Description

[0032] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0033] Figure 1 This is a schematic diagram of the display panel structure in one embodiment of this application;

[0034] Figure 2 This is a schematic flowchart of a method for manufacturing a display panel in one embodiment of this application;

[0035] Figures 3A-3D This is a step-by-step schematic diagram of the method for preparing a display panel in one embodiment of this application.

[0036] In the picture:

[0037] 1-Substrate;

[0038] 2-Anode layer; 21-First metal layer; 22-First transparent conductive layer;

[0039] 3-Isolation wall; 31-Second metal layer; 31a-Initial second metal layer; 32-Second transparent conductive layer; 32a-Initial second transparent conductive layer;

[0040] 4-First photoresist material layer. Detailed Implementation

[0041] This application is described in detail below. Examples of embodiments of this application are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Furthermore, detailed descriptions of known technologies that are unnecessary for the features of this application are omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0042] It will be understood by those skilled in the art that, unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. It should also be understood that terms such as those defined in general dictionaries should be understood to have the same meaning as in the context of the prior art, and should not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0043] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the term “comprising” as used in this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should be understood that when we say an element is “connected” or “coupled” to another element, it can be directly connected or coupled to the other element, or there may be intermediate elements. Furthermore, “connected” or “coupled” as used herein can include wireless connections or wireless coupling. The term “and / or” as used herein includes all or any units and all combinations of one or more associated listed items.

[0044] Research has found that current OLED devices contain a large number of particulate matter in the anode region. This particulate matter poses a risk of short circuits between the anode and cathode, making the OLED devices prone to display defects such as dark spots. In summary, OLED devices based on this technology suffer from a technical problem that easily leads to dark spots.

[0045] This embodiment of the application, by first preparing the first metal layer and then preparing the second metal layer in different steps, allows for different thicknesses for the second and first metal layers. This results in the second transparent conductive layer being located on the side of the first transparent conductive layer away from the substrate, and the thickness of the isolation wall being greater than the thickness of the anode layer. Compared to display panels in related technologies, the thickness of the anode layer is reduced. Since the number of particles generated on the metal surface decreases as the thickness of the metal layer decreases during the preparation process, the number of particles generated on the anode layer surface in this embodiment also decreases as the thickness of the anode layer decreases. This reduces the risk of short circuits between the anode and cathode caused by particulate matter and improves display defects such as dark spots that are prone to occur in the display panel.

[0046] This application provides a display panel, a method for manufacturing the same, and a display device, aiming to solve the above-mentioned technical problems of the prior art. The technical solution of this application and how it solves the aforementioned technical problems are described in detail below with specific embodiments.

[0047] Firstly, embodiments of this application provide a display panel. For example... Figure 1 As shown, Figure 1 This is a schematic diagram of the structure of a display panel in one embodiment of this application. The display panel includes:

[0048] The substrate 1 has a display area and a peripheral area located on at least one side of the display area;

[0049] Anode layer 2, located in the display area, includes a first metal layer 21 and a first transparent conductive layer 22 stacked on one side of the substrate 1;

[0050] The isolation wall 3 is located in the peripheral area and includes a second metal layer 31 and a second transparent conductive layer 32 stacked on one side of the substrate 1.

[0051] The anode layer 2 and the isolation wall 3 are arranged at intervals, and the thickness H2 of the isolation wall 3 in the direction perpendicular to the substrate 1 is greater than the thickness H1 of the anode layer 2 in the direction perpendicular to the substrate 1.

[0052] In this embodiment, the substrate 1 has a display area and a peripheral area surrounding at least one side of the display area. An anode layer 2 is located in the display area of ​​the substrate 1, and an isolation wall 3 is located in the peripheral area of ​​the substrate 1. A certain distance is maintained between the anode layer 2 and the isolation wall 3 to prevent short circuits caused by excessive proximity. The thickness of the isolation wall 3 (Rib) perpendicular to the substrate 1 is greater than the thickness of the anode layer 2 perpendicular to the substrate 1. The isolation wall 3 effectively separates the organic and inorganic encapsulation layers, preventing water and oxygen from entering the display area through the peripheral area, thus ensuring the display performance of the display panel.

[0053] In an optional embodiment, the material of the first metal layer 21 includes aluminum, and the material of the first transparent conductive layer 22 includes indium tin oxide; the thickness of the first metal layer 21 in the direction perpendicular to the substrate 1 is not less than 500 angstroms and not more than 1500 angstroms, and the thickness of the first transparent conductive layer 22 in the direction perpendicular to the substrate 1 is not less than 500 angstroms and not more than 1500 angstroms.

[0054] The material of the second metal layer 31 includes aluminum, and the material of the second transparent conductive layer 32 includes indium tin oxide; the thickness of the second metal layer 31 in the direction perpendicular to the substrate 1 is not less than 5000 angstroms and not more than 10000 angstroms, and the thickness of the second transparent conductive layer 32 in the direction perpendicular to the substrate 1 is not less than 500 angstroms and not more than 1500 angstroms.

[0055] The thickness of the second metal layer 31 refers to the distance between the upper surface of the second metal layer 31 and the substrate 1, and the thickness of the first metal layer 21 refers to the distance between the upper surface of the first metal layer 21 and the substrate 1.

[0056] In one specific embodiment, the thickness of the first metal layer 21 is 700 angstroms, and the thickness of the first transparent conductive layer 22 is 700 angstroms.

[0057] The thickness of the second metal layer 31 is 6000 angstroms, and the thickness of the second transparent conductive layer 32 is 700 angstroms.

[0058] In some embodiments of this application, the orthographic projection of the second metal layer 31 on the substrate 1 is the first projection, and the orthographic projection of the second transparent conductive layer 32 on the substrate 1 is the second projection, with the second projection covering the first projection.

[0059] In one embodiment, the orthographic projection of the second transparent conductive layer 32 onto the substrate 1 completely coincides with the orthographic projection of the second metal layer 31 onto the substrate 1. The second transparent conductive layer 32 and the second metal layer 31 have the same shape and size in the top view. The second transparent conductive layer 32 and the second metal layer 31 form an isolation wall 3, and the sidewalls of the isolation wall 3 are perpendicular to the substrate 1.

[0060] In another embodiment, the orthographic projection of the second transparent conductive layer 32 onto the substrate 1 completely coincides with the orthographic projection of the second metal layer 31 onto the substrate 1. The upper or lower surfaces of the second transparent conductive layer 32 and the second metal layer 31 have the same shape and size in a top view, and the second metal layer 31 is a trapezoid or an inverted trapezoid in a cross-section perpendicular to the substrate 1. The second transparent conductive layer 32 and the second metal layer 31 form an isolation wall 3, and the angle between the sidewall of the isolation wall 3 and the substrate 1 is an acute angle.

[0061] In another embodiment, the orthographic projection of a portion of the second transparent conductive layer 32 onto the substrate 1 can completely coincide with the orthographic projection of the second metal layer 31 onto the substrate 1. That is, the coverage area of ​​the orthographic projection of the entire second transparent conductive layer 32 onto the substrate 1 is greater than the coverage area of ​​the orthographic projection of the second metal layer 31 onto the substrate 1. The second transparent conductive layer 32 and the second metal layer 31 have the same shape but different dimensions. In a cross-section perpendicular to the substrate 1, the dimension of the second metal layer 31 along the direction parallel to the substrate 1 is smaller than the dimension of the second transparent conductive layer 32 along the direction parallel to the substrate 1.

[0062] In some embodiments of this application, the distance between one end of the second projection and one end of the first projection is not less than 0.5 micrometers and not more than 1 micrometer.

[0063] Based on the above embodiments, in a cross section perpendicular to the substrate 1, the difference between the dimension of the second metal layer 31 in the direction parallel to the substrate 1 and the dimension of the second transparent conductive layer 32 in the direction parallel to the substrate 1 is not less than 1 micrometer and not greater than 2 micrometers.

[0064] Since lateral etching involves etching the sidewalls of the isolation wall 3 at various angles, on a cross-section perpendicular to the substrate 1, it is equivalent to bidirectional etching of the first metal layer 21 from the left and right sides in the figure. In bidirectional etching, the spacing on each side is half of the overall spacing, that is, the spacing L between one end of the second projection and one end of the first projection is not less than 0.5 micrometers and not more than 1 micrometer.

[0065] In some embodiments of this application, the orthographic projection of the first metal layer 21 on the substrate 1 is the third projection, and the orthographic projection of the first transparent conductive layer 22 on the substrate 1 is the fourth projection, with the fourth projection covering the third projection.

[0066] In one embodiment, the orthographic projection of the first transparent conductive layer 22 onto the substrate 1 completely coincides with the orthographic projection of the first metal layer 21 onto the substrate 1. The first transparent conductive layer 22 and the first metal layer 21 have the same shape and size in the top view. The first transparent conductive layer 22 and the first metal layer 21 form an isolation wall 3, and the sidewalls of the isolation wall 3 are perpendicular to the substrate 1.

[0067] In another embodiment, the orthographic projection of the first transparent conductive layer 22 onto the substrate 1 completely coincides with the orthographic projection of the first metal layer 21 onto the substrate 1. The upper or lower surfaces of the first transparent conductive layer 22 and the first metal layer 21 have the same shape and size in a top view, and the first metal layer 21 is a trapezoid or an inverted trapezoid in a cross-section perpendicular to the substrate 1. The first transparent conductive layer 22 and the first metal layer 21 form an isolation wall 3, and the angle between the sidewall of the isolation wall 3 and the substrate 1 is an acute angle.

[0068] In another embodiment, the orthographic projection of a portion of the first transparent conductive layer 22 onto the substrate 1 can completely coincide with the orthographic projection of the first metal layer 21 onto the substrate 1. That is, the coverage area of ​​the orthographic projection of the entire first transparent conductive layer 22 onto the substrate 1 is greater than the coverage area of ​​the orthographic projection of the first metal layer 21 onto the substrate 1. The first transparent conductive layer 22 and the first metal layer 21 have the same shape but different dimensions. In a cross-section perpendicular to the substrate 1, the dimension of the first metal layer 21 along the direction parallel to the substrate 1 is smaller than the dimension of the first transparent conductive layer 22 along the direction parallel to the substrate 1.

[0069] In some embodiments of this application, the thickness of the second metal layer 31 in the direction perpendicular to the substrate 1 is greater than the thickness of the first metal layer 21 in the direction perpendicular to the substrate 1.

[0070] In this embodiment, since the upper surface of the second metal layer 31 is located on the side of the upper surface of the first metal layer 21 away from the substrate 1, the thickness of the second metal layer 31 refers to the distance between the upper surface of the second metal layer 31 and the substrate 1, and the thickness of the second metal layer 31 is greater than the thickness of the first metal layer 21.

[0071] In some embodiments of this application, the thickness of the second metal layer 31 in the direction perpendicular to the substrate 1 is not less than 5000 angstroms, and the thickness of the first metal layer 21 in the direction perpendicular to the substrate 1 is not greater than 1500 angstroms.

[0072] In some embodiments of this application, at least one of the second metal layer 31 and the first metal layer 21 is made of aluminum;

[0073] At least one of the second transparent conductive layer 32 and the first transparent conductive layer 22 is made of indium tin oxide.

[0074] Optionally, the material of the first metal layer 21 includes aluminum, and the material of the first transparent conductive layer 22 includes indium tin oxide;

[0075] Optionally, the material of the second metal layer 31 includes aluminum, and the material of the second transparent conductive layer 32 includes indium tin oxide.

[0076] The preparation method of the second metal layer 31 includes sputter deposition using an aluminum alloy target of model DC-01 to reduce the risk of hillocks appearing in the second metal layer 31.

[0077] Based on the same inventive concept, in a second aspect, this application provides a display device including a display panel as described in any of the embodiments of the first aspect. Since the display device includes a display panel as described in any of the embodiments of the first aspect, it has the same beneficial effects as the aforementioned display panel, which will not be repeated here.

[0078] Based on the same inventive concept, in a third aspect, embodiments of this application provide a method for manufacturing a display panel. For example... Figure 2 and Figures 3A-3D As shown, Figure 2 This is a schematic flowchart illustrating a method for manufacturing a display panel according to one embodiment of this application. Figures 3A-3D This is a step-by-step schematic diagram of a method for fabricating a display panel according to one embodiment of this application. The method for fabricating the display panel includes the following steps:

[0079] S1. A first metal layer 21 and a first transparent conductive layer 22 are sequentially fabricated in the display area of ​​the substrate 1 to form an anode layer 2; as follows: Figure 3A As shown.

[0080] S2. An initial second metal layer 31a and an initial second transparent conductive layer 32a are sequentially formed in the peripheral region of the substrate 1 and on the side of the first transparent conductive layer 22 away from the substrate 1; as shown Figure 3B As shown.

[0081] S3. Pattern the initial second transparent conductive layer 32a to form the second transparent conductive layer 32. The orthographic projection of the second transparent conductive layer 32 onto the substrate 1 is located in the peripheral region.

[0082] S4. Patterning the initial second metal layer 31a to form a second metal layer 31. The orthographic projection of the second metal layer 31 onto the substrate 1 is located in the peripheral region. The second metal layer 31 and the second transparent conductive layer 32 form an isolation wall 3, wherein: along the direction perpendicular to the substrate, the thickness of the second metal layer 31 is greater than the thickness of the first metal layer 21, such as... Figure 1 As shown.

[0083] By first preparing the first metal layer 21 in step S1 and then preparing the second metal layer 31 in steps S2-S4, the upper surface of the second metal layer 31 is located on the side of the upper surface of the first metal layer 21 away from the substrate 1. This allows for different thicknesses to be set for the second metal layer 31 and the first metal layer 21. Specifically, the thickness of the second metal layer 31 in the direction perpendicular to the substrate 1 is greater than the thickness of the first metal layer 21 in the direction perpendicular to the substrate 1.

[0084] Since the upper surface of the second metal layer 31 is located on the side of the upper surface of the first metal layer 21 away from the substrate 1, the second transparent conductive layer 32 stacked on the upper surface of the second metal layer 31 is further away from the substrate 1 than the first transparent conductive layer 22 stacked on the upper surface of the first metal layer 21. The distance between the second transparent conductive layer 32 and the substrate 1 is greater than the distance between the second transparent electrode layer and the substrate 1, that is, the thickness H2 of the isolation wall 3 is greater than the thickness H1 of the anode layer 2.

[0085] Compared to the thickness H2 of the isolation wall 3, the thickness H1 of the anode layer 2 is smaller. Since the number of particles generated on the metal surface decreases as the thickness of the metal layer decreases during the preparation process, the number of particles generated on the surface of the anode layer 2 in this embodiment also decreases as the thickness of the anode layer 2 decreases. This reduces the risk of short circuit between the anode and cathode caused by particulate matter and improves the display panel's ability to produce dark spots and other display defects.

[0086] In some embodiments of this application, the initial second transparent conductive layer 32a is patterned, and step S3 includes:

[0087] S31. A first photoresist layer 4 is prepared on the side of the initial second transparent conductive layer 32a away from the substrate 1; as shown Figure 3C As shown.

[0088] S32. Etch the initial second transparent conductive layer 32a that is not covered by the first photoresist material layer 4, and retain the initial second transparent conductive layer 32a covered by the first photoresist material layer 4 to form the second transparent conductive layer 32.

[0089] Patterning the initial second metal layer 31a, after step S4, includes:

[0090] S5. Remove the first photoresist layer 4.

[0091] In this embodiment, the orthographic projections of the initial second metal layer 31a and the initial second transparent conductive layer 32a obtained in step S2 onto the substrate 1 are located in at least a portion of the display area and at least a portion of the peripheral area of ​​the substrate 1. Specifically, at least a portion of the initial second metal layer 31a and at least a portion of the second transparent conductive layer 32a cover the surface of the first transparent conductive layer 22 located in the display area away from the substrate 1.

[0092] In step S31, a first photoresist layer 4 is prepared on the side of the initial second transparent conductive layer 32a away from the substrate 1, and the orthogonal projection of the first photoresist layer 4 on the substrate 1 is located in the peripheral area of ​​the substrate 1.

[0093] In step S32, the initial second transparent conductive layer 32a is etched using the first photoresist material layer 4 as a mask to remove the portion of the initial second transparent conductive layer 32a not covered by the first photoresist material layer 4, i.e., to remove at least a portion of the initial second transparent conductive layer 32a located in the display area, while retaining the portion of the initial second transparent conductive layer 32a covered by the first photoresist material layer 4, i.e., to retain at least a portion of the initial second transparent conductive layer 32a located in the peripheral area. The initial second transparent conductive layer 32a retained in the peripheral area forms the second transparent conductive layer 32.

[0094] In some embodiments of this application, the patterned initial second metal layer 31a includes:

[0095] S41. Etch the initial second metal layer 31a that is not covered by the second transparent conductive layer 32, and retain the initial second metal layer 31a covered by the second transparent conductive layer 32 to form a second metal layer.

[0096] In one embodiment, in step S41, the initial second metal layer 31a is etched using the patterned second transparent conductive layer 32 as a mask to remove the initial second metal layer 31a not covered by the second transparent conductive layer 32, that is, to remove at least part of the initial second metal layer 31a located in the display area, and to retain the initial second metal layer 31a covered by the second transparent conductive layer 32, that is, to retain at least part of the initial second metal layer 31a located in the peripheral area.

[0097] Based on the above embodiments, in another embodiment, the method further includes the following after step S41:

[0098] S42. Laterally etch the initial second metal layer 31a covered by the second transparent conductive layer 32 to form the second metal layer 31. For example... Figure 3D As shown.

[0099] In step S42, the initial second metal layer 31a covered by the second transparent conductive layer 32 is etched laterally.

[0100] In this embodiment, the initial second metal layer 31a obtained in step S41 has the same shape and size as the second transparent conductive layer 32, and the orthographic projection of the initial second metal layer 31a on the substrate 1 completely overlaps with the orthographic projection of the second transparent conductive layer 32 on the substrate 1.

[0101] Laterally etching is performed on the initial second metal layer 31a located between the second transparent conductive layer 32 and the substrate 1 using a metal etching solution. The metal etching solution only etches the second metal layer 31 and has no effect on the second transparent conductive layer 32, or the etching rate of the metal etching solution on the second metal layer 31 is much greater than the etching rate on the second transparent conductive layer 32, so the influence of the metal etching solution on the second transparent conductive layer 32 can be ignored to a certain extent.

[0102] After lateral etching, on a cross-section perpendicular to the substrate 1, the dimension of the second metal layer 31 in the direction parallel to the substrate 1 is smaller than the dimension of the second transparent conductive layer 32 in the direction parallel to the substrate 1. That is, the orthographic projection of the second transparent conductive layer 32 on the substrate 1 is the second projection, the orthographic projection of the second metal layer 31 on the substrate 1 is the first projection, the second projection covers the first projection, and there is a gap between one end of the second projection and one end of the first projection.

[0103] After lateral etching, the second transparent conductive layer 32, the second metal layer 31 and the substrate 1 together form an I-shaped structure. The coverage area of ​​the second transparent conductive layer 32 and the substrate 1 is larger than that of the second metal layer 31. After lateral etching, the spacing between the second metal layer 31 and other adjacent metal layers (including but not limited to the first metal layer 21) becomes larger, reducing the risk of short circuit.

[0104] In a specific embodiment of this application, in step S1, a first metal layer 21 and a first transparent conductive layer 22 are sequentially prepared in the display area of ​​the substrate 1 to form an anode layer 2.

[0105] Optionally, the material of the first metal layer 21 includes aluminum, and the material of the first transparent conductive layer 22 includes indium tin oxide; the thickness of the first metal layer 21 in the direction perpendicular to the substrate 1 is not less than 500 angstroms and not more than 1500 angstroms, and the thickness of the first transparent conductive layer 22 in the direction perpendicular to the substrate 1 is not less than 500 angstroms and not more than 1500 angstroms.

[0106] Specifically, the thickness of the first metal layer 21 is 700 angstroms, and the thickness of the first transparent conductive layer 22 is 700 angstroms.

[0107] Optionally, step S1 includes:

[0108] An initial first metal layer 21 and an initial first transparent conductive layer 22 are prepared on one side of the substrate 1;

[0109] A second photoresist layer is prepared on the side of the initial first transparent conductive layer 22 away from the substrate 1;

[0110] The initial first transparent conductive layer 22 not covered by the second photoresist material layer is etched, and the initial first transparent conductive layer 22 covered by the second photoresist material layer is retained to form the first transparent conductive layer 22.

[0111] Etch the initial first metal layer 21 that is not covered by the first transparent conductive layer 22, and retain the initial first metal layer 21 covered by the first transparent conductive layer 22;

[0112] Laterally etch the initial first metal layer 21 covered by the first transparent conductive layer 22 to form the first metal layer 21;

[0113] Remove the second photoresist layer.

[0114] Substrate testing (ArrayTest, AT) is performed on the anode layer 2, which consists of the first metal layer 21 and the first transparent conductive layer 22.

[0115] Step S2 includes:

[0116] Optionally, the material of the second metal layer 31 includes aluminum, and the material of the second transparent conductive layer 32 includes indium tin oxide; the thickness of the second metal layer 31 in the direction perpendicular to the substrate 1 is not less than 5000 angstroms and not more than 10000 angstroms, and the thickness of the second transparent conductive layer 32 in the direction perpendicular to the substrate 1 is not less than 500 angstroms and not more than 1500 angstroms.

[0117] The preparation method of the second metal layer 31 includes sputter deposition using an aluminum alloy target of model DC-01 to reduce the risk of hillocks appearing in the second metal layer 31.

[0118] Specifically, the thickness of the second metal layer 31 is 6000 angstroms, and the thickness of the first transparent conductive layer 22 is 700 angstroms.

[0119] The thickness of the second metal layer 31 refers to the distance between the upper surface of the second metal layer 31 and the substrate 1.

[0120] By applying the embodiments of this application, at least the following beneficial effects can be achieved:

[0121] This embodiment of the application, by first preparing the first metal layer 21 and then preparing the second metal layer 31 in different steps, can set different thicknesses for the second metal layer 31 and the first metal layer 21, so that the second transparent conductive layer 32 is located on the side of the first transparent conductive layer 22 away from the substrate 1, and the thickness of the isolation wall 3 is greater than the thickness of the anode layer 2. Compared with the display panel in the related technology, the thickness of the anode layer 2 is reduced. Since the number of particles generated on the metal surface decreases as the thickness of the metal layer decreases during the preparation process, the number of particles generated on the surface of the anode layer 2 in this embodiment also decreases as the thickness of the anode layer 2 decreases, thereby reducing the risk of short circuit between the anode and cathode caused by particulate matter and improving the display panel's tendency to have dark spots and other display defects.

[0122] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in the prior art that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0123] In the description of this application, it should be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0124] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0125] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0126] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0127] It should be understood that although the steps in the flowcharts of the accompanying figures are shown sequentially as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the accompanying figures may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times, and their execution order is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the sub-steps or stages of other steps.

[0128] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.

Claims

1. A method for manufacturing a display panel, characterized in that, Preparation methods include: A first metal layer and a first transparent conductive layer are sequentially fabricated in the display area of ​​a substrate to form an anode layer. The substrate has a display area and a peripheral area located outside the display area. An initial second metal layer and an initial second transparent conductive layer are sequentially formed in the peripheral region of the substrate and on the side of the first transparent conductive layer away from the substrate. The initial second transparent conductive layer is patterned to form a second transparent conductive layer, wherein the orthographic projection of the second transparent conductive layer on the substrate is located in the peripheral region; The initial second metal layer is patterned to form a second metal layer. The orthographic projection of the second metal layer on the substrate is located in the peripheral region. The second metal layer and the second transparent conductive layer form an isolation wall. The isolation wall is located in the peripheral region. The isolation wall includes a second metal layer and a second transparent conductive layer stacked on one side of the substrate. The anode layer and the isolation wall are arranged at intervals, and the thickness of the second metal layer in the direction perpendicular to the substrate is greater than the thickness of the first metal layer in the direction perpendicular to the substrate.

2. The preparation method according to claim 1, characterized in that, The patterning of the initial second transparent conductive layer includes: A first photoresist layer is prepared on the side of the initial second transparent conductive layer away from the substrate. The initial second transparent conductive layer not covered by the first photoresist material layer is etched, while the initial second transparent conductive layer covered by the first photoresist material layer is retained to form the second transparent conductive layer; The patterning of the initial second metal layer is followed by: Remove the first photoresist material layer.

3. The preparation method according to claim 2, characterized in that, The patterning of the initial second metal layer includes: The initial second metal layer not covered by the second transparent conductive layer is etched, while the initial second metal layer covered by the second transparent conductive layer is retained to form a second metal layer.

4. A display panel, characterized in that, It is prepared by the method described in any one of claims 1-3.

5. The display panel according to claim 4, characterized in that, The orthographic projection of the second metal layer on the substrate is the first projection, and the orthographic projection of the second transparent conductive layer on the substrate is the second projection, and the second projection covers the first projection.

6. The display panel according to claim 5, characterized in that, The distance between one end of the second projection and one end of the first projection is not less than 0.5 micrometers and not more than 1 micrometer.

7. The display panel according to claim 4, characterized in that, The orthographic projection of the first metal layer on the substrate is a third projection, and the orthographic projection of the first transparent conductive layer on the substrate is a fourth projection, the fourth projection covering the third projection.

8. The display panel according to claim 4, characterized in that, The thickness of the first metal layer in the direction perpendicular to the substrate is not greater than 1500 angstroms, and the thickness of the second metal layer in the direction perpendicular to the substrate is not less than 5000 angstroms.

9. The display panel according to claim 4, characterized in that, At least one of the first metal layer and the second metal layer is made of aluminum; The material of at least one of the first transparent conductive layer and the second transparent conductive layer includes indium tin oxide.

10. A display device, characterized in that, include: The display panel as described in any one of claims 4-9.

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