Substrate processing apparatus and substrate processing method

Abstract

The substrate processing apparatus (1, 1A to 1C) of the present invention includes a processing tank (11), a first nozzle (30), a second nozzle (40, 40B), and a flow rate control section (5). The processing tank (11) causes a plurality of substrates (W) to be dipped in a processing liquid to process the substrates. The first nozzle (30) is disposed at a position lower than the plurality of substrates (W) inside the processing tank (11) and supplies the processing liquid that has been temperature-adjusted to the processing tank (11). The second nozzle (40, 40B) is disposed at a position higher than the first nozzle (30) inside the processing tank (11) and supplies the processing liquid that has been temperature-adjusted to the processing tank (11). The flow rate control section (5) increases the flow rate of the processing liquid that has been temperature-adjusted supplied from the second nozzle (40, 40B) when the difference between the temperature of the processing liquid at a first position lower than the plurality of substrates (W) and the temperature of the processing liquid at a second position higher than an imaginary center line that divides the plurality of substrates (W) in the up-down direction exceeds a threshold value.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Previously, there were known substrate processing apparatuses that processed multiple substrates at the same time by immersing a batch (lot) formed of multiple substrates in a processing tank containing a processing solution.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-174258 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique that can improve the temperature uniformity of the treatment liquid in the treatment tank.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the substrate processing apparatus of the present invention includes a processing tank, a first nozzle, a second nozzle, and a flow control unit. The processing tank is used to immerse multiple substrates in a processing liquid for processing. The first nozzle is disposed inside the processing tank at a position lower than the multiple substrates and supplies temperature-regulated processing liquid into the processing tank. The second nozzle is disposed inside the processing tank at a position higher than the first nozzle and supplies temperature-regulated processing liquid into the processing tank. If the temperature difference between the processing liquid at the first position and the processing liquid at the second position exceeds a threshold, the flow control unit increases the flow rate of the temperature-regulated processing liquid supplied from the second nozzle, wherein the first position is lower than the multiple substrates, and the second position is higher than an imaginary center line dividing the multiple substrates vertically.

[0010] Invention Effects

[0011] According to the present invention, the temperature uniformity of the treatment liquid in the treatment tank can be improved. Attached Figure Description

[0012] Figure 1 This is a block diagram showing the structure of the substrate processing apparatus according to the first embodiment.

[0013] Figure 2 This is a top view of the inner groove of the first embodiment as seen from above.

[0014] Figure 3 From Figure 2 A cross-sectional view of the inner groove of the first embodiment viewed from the negative Y-axis direction to the positive Y-axis direction.

[0015] Figure 4 From Figure 2 A cross-sectional view of the inner groove of the first embodiment viewed from the positive X-axis direction to the negative X-axis direction.

[0016] Figure 5 This is a flowchart illustrating the processing flow performed by the substrate processing apparatus of the first embodiment.

[0017] Figure 6 This is a diagram illustrating an example of the control process of a liquid delivery mechanism.

[0018] Figure 7 This is a diagram showing the structure of the substrate processing apparatus in the first modified example.

[0019] Figure 8 This is a diagram showing the structure of the substrate processing apparatus according to the second embodiment.

[0020] Figure 9 This is a top view of the inner groove of the second embodiment as seen from above.

[0021] Figure 10 From Figure 9 A cross-sectional view of the inner groove of the second embodiment, viewed from the negative Y-axis direction to the positive Y-axis direction.

[0022] Figure 11 This is a flowchart illustrating the flow control process of the second embodiment.

[0023] Figure 12 This is a flowchart illustrating the temperature control process of the second embodiment.

[0024] Figure 13 This is a diagram showing the structure of the substrate processing apparatus according to the third embodiment.

[0025] Figure 14 This is a view of the cover of the third embodiment from below.

[0026] Figure 15 From Figure 14 A diagram of the cover of the third embodiment viewed from the positive X-axis direction to the negative X-axis direction. Detailed Implementation

[0027] Hereinafter, with reference to the accompanying drawings, a detailed description will be provided of the embodiments (hereinafter referred to as "Embodiments") for carrying out the substrate processing apparatus and substrate processing method of the present invention. However, the present invention is not limited to these embodiments. Furthermore, the embodiments can be appropriately combined without contradicting the processing content. In the following embodiments, the same reference numerals will be used to label the same parts, and repeated descriptions will be omitted.

[0028] Furthermore, in the embodiments shown below, terms such as "certain," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these terms do not need to be strictly "certain," "orthogonal," "perpendicular," or "parallel." That is, the above terms, for example, allow for deviations in manufacturing precision, setting precision, etc.

[0029] Furthermore, in the accompanying figures below, to facilitate understanding, the X-axis, Y-axis, and Z-axis directions are sometimes defined as mutually orthogonal, with the positive Z-axis direction set as an orthogonal coordinate system pointing vertically upwards. Additionally, the direction of rotation about the vertical axis is sometimes referred to as the θ direction.

[0030] A substrate processing apparatus is known to process multiple substrates simultaneously by immersing a batch of substrates in a processing tank containing a processing solution.

[0031] In the substrate processing apparatus, a nozzle for releasing a temperature-controlled processing liquid is positioned at the bottom of the processing tank. During substrate processing, the temperature-controlled processing liquid is released from the nozzle, thereby forming a liquid flow of the processing liquid within the processing tank.

[0032] Thus, in this substrate processing apparatus, since a temperature-controlled processing solution is supplied from the lower part of the processing tank, a temperature difference in the processing solution may occur between the lower and upper parts of the processing tank. Specifically, the temperature of the processing solution in the upper part of the processing tank becomes lower than the temperature of the processing solution in the lower part of the processing layer.

[0033] When there is a temperature difference in the processing solution within the processing tank, the in-plane uniformity of the substrate etching decreases. Therefore, it is desirable to improve the temperature uniformity of the processing solution within the processing tank, particularly to reduce the temperature difference of the processing solution in the vertical direction within the processing tank.

[0034] (First Implementation)

[0035] <Structure of the Substrate Processing Device>

[0036] Reference Figure 1 The structure of the substrate processing apparatus of the first embodiment will be described. Figure 1 This is a block diagram showing the structure of the substrate processing apparatus according to the first embodiment.

[0037] Figure 1 The substrate processing apparatus 1 shown processes substrates W, such as semiconductor wafers, in batches. A batch is formed from multiple (e.g., 50) substrates W. The multiple substrates W forming a batch are arranged at certain intervals with their surfaces facing each other.

[0038] like Figure 1As shown, the substrate processing apparatus 1 includes a processing tank 10, a lifting mechanism 20, a plurality of (three in this case) first nozzles 30 and a plurality of (two in this case) second nozzles 40. Furthermore, the substrate processing apparatus 1 includes a first supply path 50 and a second supply path 60.

[0039] In the processing tank 10, an etching process is performed using a prescribed etching solution. This etching process selectively etches the silicon nitride film (SiN) and the silicon oxide film (SiO2) formed on the substrate W. In this etching process, the etching solution is a solution in which the silicon concentration is adjusted by adding a silicon-containing (Si) compound to an aqueous solution of phosphoric acid (H3PO4).

[0040] As a method for adjusting the silicon concentration in the etching solution, one can use a method that dissolves silicon by immersing the simulation substrate in an aqueous phosphoric acid solution (seasoning), or a method that dissolves silicon-containing compounds such as colloidal silica in an aqueous phosphoric acid solution. Alternatively, an aqueous solution containing silicon compounds can be added to the aqueous phosphoric acid solution to adjust the silicon concentration.

[0041] The processing tank 10 includes an inner tank 11 and an outer tank 12. The inner tank 11 is a box-shaped tank that is open at the top and stores etching solution inside. A batch of substrates W arranged in an upright position is immersed in the etching solution stored in the inner tank 11.

[0042] The outer tank 12 is open at its top and is positioned around the upper part of the inner tank 11. Etching solution overflowing from the inner tank 11 flows into the outer tank 12.

[0043] The outer tank 12 is connected to the phosphoric acid aqueous solution supply unit 13, the silicon supply unit 14 and the DIW supply unit 15.

[0044] The phosphoric acid aqueous solution supply unit 13 includes a phosphoric acid aqueous solution supply source 131, a phosphoric acid aqueous solution supply pipeline 132, and a flow regulator 133.

[0045] Phosphoric acid solution supply source 131 supplies phosphoric acid solution with a concentration that is concentrated to the desired concentration. Phosphoric acid solution supply line 132 connects phosphoric acid solution supply source 131 to external tank 12, supplying phosphoric acid solution from phosphoric acid solution supply source 131 to external tank 12.

[0046] A flow regulator 133 is installed in the phosphoric acid aqueous solution supply pipeline 132 to regulate the supply amount of phosphoric acid aqueous solution to the external tank 12. The flow regulator 133 consists of an on / off valve or regulating valve, a flow meter, etc.

[0047] The silicon supply unit 14 includes a silicon supply source 141, a silicon supply line 142, and a flow regulator 143.

[0048] Silicon supply source 141 is a tank for storing aqueous solutions containing silicon compounds. Silicon supply line 142 connects silicon supply source 141 to outer tank 12, supplying aqueous solutions containing silicon compounds from silicon supply source 141 to outer tank 12.

[0049] A flow regulator 143 is installed in the silicon supply line 142 to regulate the supply amount of the silicon-containing compound aqueous solution to the outer tank 12. The flow regulator 143 consists of an on / off valve or regulating valve, a flow meter, etc. By adjusting the supply amount of the silicon-containing compound aqueous solution using the flow regulator 143, the silicon concentration of the etching solution can be adjusted.

[0050] The DIW supply unit 15 includes a DIW supply source 151, a DIW supply line 152, and a flow regulator 153. The DIW supply unit 15 supplies DIW (Deionized Water) to the outer tank 12 to replenish the water evaporated due to heating of the etching solution.

[0051] The DIW supply line 152 connects the DIW supply source 151 to the outer tank 12, supplying DIW at a specified temperature from the DIW supply source 151 to the outer tank 12.

[0052] A flow regulator 153 is installed in the DIW supply line 152 to regulate the amount of DIW supplied to the outer tank 12. The flow regulator 153 consists of an on / off valve or regulating valve, a flow meter, etc. By adjusting the amount of DIW supplied using the flow regulator 153, the temperature, phosphoric acid concentration, and silicon concentration of the etching solution can be adjusted.

[0053] The lifting mechanism 20 holds multiple substrates W in a batch, arranged in a front-to-back upright position. Furthermore, the lifting mechanism 20 moves the multiple substrates W between an upper position above the surface of the etching solution stored in the inner tank 11 and an immersion position inside the inner tank 11. Figure 1 This indicates the configuration of multiple substrates W at the immersion position. For example... Figure 1 As shown, the immersion position refers to the location where the entire substrate W is immersed in the etching solution.

[0054] Multiple first nozzles 30 are disposed inside the inner tank 11 at a position lower than the multiple substrates W, supplying temperature-regulated etching solution to the inner tank 11. Each first nozzle 30 extends along the arrangement direction (Y-axis direction) of the multiple substrates W, and releases temperature-regulated etching solution from multiple release ports arranged along the arrangement direction of the multiple substrates W.

[0055] The first supply path 50 is connected to a plurality of first nozzles 30, supplying temperature-regulated etching solution to the plurality of first nozzles 30. Specifically, the first supply path 50 is a circulation path connecting the outer tank 12 to the plurality of first nozzles 30, supplying etching solution overflowing from the inner tank 11 and flowing into the outer tank 12 to the plurality of first nozzles 30.

[0056] In the first supply path 50, starting from the upstream side (the side closest to the outer tank 12), a liquid delivery mechanism 51, a temperature regulating unit 52, and a filter 53 are arranged in sequence.

[0057] The liquid delivery mechanism 51, such as a vacuum pump, delivers the etching solution flowing into the first supply path 50 downstream. The temperature control unit 52, such as a sheath heater, regulates the temperature of the etching solution flowing in the first supply path 50. Specifically, the temperature control unit 52 heats the etching solution flowing in the first supply path 50. The filter 53 removes impurities from the etching solution flowing in the first supply path 50.

[0058] Multiple second nozzles 40 are positioned above multiple first nozzles 30 inside the inner tank 11 to supply temperature-controlled etching solution to the inner tank 11.

[0059] The aforementioned plurality of first nozzles 30 stably supply etching solution during the processing of the plurality of substrates W. In contrast, a plurality of second nozzles 40 are used as an auxiliary means to reduce the temperature difference of the etching solution in the vertical direction within the inner tank 11.

[0060] Here, "auxiliary" means that during the processing of multiple substrates W, the flow rate of the temperature-controlled etchant supplied from the multiple second nozzles 40 is temporarily increased. "Increasing the flow rate" also includes the case where the supply of temperature-controlled etchant from the multiple second nozzles 40 begins from a state where the flow rate is 0, i.e., a state where the supply of temperature-controlled etchant from the multiple second nozzles 40 has been stopped.

[0061] In the first embodiment, a plurality of second nozzles 40 are positioned above the first nozzle 30 and below the imaginary centerline L1 that divides the plurality of substrates W at the immersion position. The specific structure of the second nozzles 40 will be described later.

[0062] The second supply path 60 is connected to a plurality of second nozzles 40, supplying temperature-controlled etching solution to the plurality of second nozzles 40.

[0063] The second supply path 60 is a branch path that branches off from the first supply path 50. Specifically, the second supply path 60 branches off from the first supply path 50, which is downstream of the filter 53. Furthermore, the second supply path 60 may branch off from the first supply path 50, which is at least downstream of the temperature regulating unit 52.

[0064] In the second supply path 60, a flow regulator 61 and a filter 62 are sequentially arranged from the upstream side (the side closest to the first supply path 50).

[0065] Flow regulator 61 regulates the flow rate of the temperature-controlled etching solution flowing in the second supply path 60. Flow regulator 61 consists of an on / off valve or regulating valve, a flow meter, etc. The on / off valve is a valve that fully opens or closes the second supply path 60, and the regulating valve is a valve that can adjust the opening degree of the second supply path 60. Filter 62 removes impurities from the etching solution flowing in the second supply path 60.

[0066] The substrate processing apparatus 1 includes a first temperature sensor 70 and a second temperature sensor 80. The first temperature sensor 70 detects the temperature of the etching solution at a first position below the plurality of substrates W disposed at the immersion position. Furthermore, the second temperature sensor 80 detects the temperature of the etching solution at a second position above the centerline L1.

[0067] A first temperature sensor 70 is disposed in the first supply path 50 between the temperature regulating unit 52 and the filter 53. This first temperature sensor 70 detects the temperature of the etching solution flowing in the first supply path 50 as the temperature of the etching solution at a first location. The detection results of the first temperature sensor 70 and the second temperature sensor 80 are output to the control unit 5, which will be described later. Furthermore, the first temperature sensor 70 can be disposed in the first supply path 50 at least downstream of the temperature regulating unit 52. For example, the first temperature sensor 70 may also be disposed in the first supply path 50 downstream of the filter 53.

[0068] The substrate processing apparatus 1 includes a control unit 5. The control unit 5 controls the operation of various parts of the substrate processing apparatus 1 based on signals from switches, various sensors, etc. Specifically, the control unit 5 controls the liquid delivery mechanism 51, the temperature regulation unit 52, and the flow regulators 61, 133, 143, 153, etc.

[0069] The control unit 5 is, for example, a computer, and has a computer-readable storage medium. The storage medium stores programs that control various processes executed in the substrate processing device 1.

[0070] The control unit 5 controls the operation of the substrate processing apparatus 1 by reading and executing a program stored in the storage medium. For example, by reading and executing the program, the control unit 5 functions as a flow control unit that controls the flow rate of temperature-regulated etching solution supplied from the plurality of first nozzles 30 and the plurality of second nozzles 40. In addition, by reading and executing the program, the control unit 5 functions as a temperature control unit that controls the temperature regulation unit 52 based on the detection result of at least one of the first temperature sensor 70 and the second temperature sensor 80.

[0071] Alternatively, the program can be stored in a computer-readable storage medium or installed from other storage media onto the storage medium of the control unit 5.

[0072] Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), and memory cards.

[0073] Alternatively, the substrate processing apparatus 1 may include, for example, a gas supply unit that supplies gases such as nitrogen to the lower part of a plurality of first nozzles 30.

[0074] <Structure of the second nozzle>

[0075] Next, refer to Figures 2-4 The specific structure of the second nozzle 40 will be explained. Figure 2 This is a top view of the inner groove 11 of the first embodiment as seen from above. Figure 3 From Figure 2 A cross-sectional view of the inner groove 11 of the first embodiment viewed from the negative Y-axis direction to the positive Y-axis direction. Figure 4 From Figure 2 A cross-sectional view of the inner groove 11 of the first embodiment, viewed from the positive X-axis direction to the negative X-axis direction. Furthermore, for ease of understanding, in... Figure 2 and Figure 4 The number of substrates W is reduced to represent this.

[0076] like Figure 2 As shown, the second nozzle 40 includes a first release portion 41 extending along the arrangement direction (Y-axis direction) of the plurality of substrates W and a second release portion 42 extending along a horizontal direction (X-axis direction) orthogonal to the arrangement direction of the plurality of substrates W. In the first release portion 41, a plurality of first release ports 411 are provided along the Y-axis direction. Furthermore, in the second release portion 42, a plurality of second release ports 421 are provided along the X-axis direction.

[0077] The ends of the first release portion 41 and the second release portion 42 are integrally connected to each other. That is, the second nozzle 40 has an L-shape when viewed from above. One of the two second nozzles 40 is arranged near a side wall 111 facing the Y-axis and a side wall 112 facing the X-axis in the side wall of the inner groove 11. The other second nozzle 40 is arranged near a side wall 113 facing the Y-axis and a side wall 114 facing the X-axis in the side wall of the inner groove 11. In this way, the two second nozzles 40 are arranged to surround the periphery of the plurality of substrates W when viewed from above.

[0078] like Figure 3 As shown, the first release section 41 is disposed on the side of the plurality of substrates W. Specifically, the first release section 41 is disposed at a position on the outer side of the substrate W, which is tangent to the peripheral edge of the substrate W. The first release section 41 releases temperature-controlled etching solution vertically upward from the plurality of first release ports 411.

[0079] In this way, by preventing the temperature-regulated etchant released from the first release section 41 from being directly supplied to the substrate W, it is possible to suppress the local temperature rise of the substrate W.

[0080] A second temperature sensor 80 is disposed vertically above the first release section 41. Specifically, for example, the second temperature sensor 80 is disposed above the center line L1 of the substrate W and outside the vertical line L2. The second temperature sensor 80 detects the temperature of the etching solution at this location as the temperature of the etching solution at the second location.

[0081] like Figure 4 As shown, the second release section 42 is disposed in front of and behind the plurality of substrates W1. Specifically, one of the two second release sections 42 is disposed on the negative Y-axis side of the substrate W1 located at the head of the plurality of substrates W. Furthermore, the other of the two second release sections 42 is disposed on the positive Y-axis side of the substrate W2 located at the tail of the plurality of substrates W. In this way, the second release section 42 is disposed on the outer side of the arrangement direction of the substrates located at the head or tail of the plurality of substrates W. The second release section 42 releases temperature-controlled etching solution vertically upward from the plurality of second release ports 421.

[0082] In this way, by preventing the temperature-regulated etchant released from the second release section 42 from being directly supplied to the substrate W, it is possible to suppress the local temperature rise of the substrate W.

[0083] A second temperature sensor 80 is disposed vertically above the second release section 42. That is, the second temperature sensor 80 is disposed above the connection portion (corner portion of the L-shape) between the first release section 41 and the second release section 42. In other words, the second temperature sensor 80 is disposed near one of the four corners of the inner groove 11 when viewed from above.

[0084] In this way, the first release part 41 and the second release part 42 supply temperature-regulated etching solution to the second temperature sensor 80 disposed in the second position.

[0085] For example, the control unit 5 controls the temperature regulation unit 52 so that the temperature detected by the second temperature sensor 80 is close to the preset temperature.

[0086] For example, a temperature difference in the vertical direction is generated in the etching solution within the inner tank 11, causing a decrease in the detection temperature of the second temperature sensor 80. In this case, the control unit 5 increases the output of the temperature regulation unit 52, thereby increasing the temperature of the etching solution supplied from the first nozzle 30. As a result, a higher-temperature etching solution is supplied to the lower part of the substrate W located near the first nozzle 30, causing the lower part of the substrate W to be over-etched compared to other parts. That is, the in-plane uniformity of the etching of the substrate W decreases.

[0087] In contrast, in the substrate processing apparatus 1 of this embodiment, a second nozzle 40 is positioned higher than the first nozzle 30, and temperature-regulated etching solution is supplied upward from the second nozzle 40. Therefore, compared to the case where temperature-regulated etching solution is supplied only from the first nozzle 30, the detection temperature of the second temperature sensor 80 can rise earlier.

[0088] By causing the detection temperature of the second temperature sensor 80 to rise earlier, the output of the temperature regulation unit 52 can be prevented from rising excessively. Therefore, excessive etching of the lower portion of the substrate W can be suppressed. That is, the reduction in the in-plane uniformity of the etching of the substrate W can be suppressed.

[0089] In this way, in the substrate processing apparatus 1 of the embodiment, by using the second nozzle 40, the temperature difference in the vertical direction of the etching solution in the inner tank 11 can be eliminated earlier. Therefore, the substrate processing apparatus 1 according to the embodiment can improve the temperature uniformity of the etching solution in the inner tank 11. In addition, by suppressing the increase in the output of the temperature regulating unit 52, the decrease in the in-plane uniformity of etching of the substrate W can be suppressed.

[0090] Furthermore, according to the embodiment of the substrate processing apparatus 1, by releasing temperature-regulated etching solution from the second nozzle 40 toward the second temperature sensor 80, the detection temperature of the second temperature sensor 80 can rise earlier. Therefore, the rise in the output of the temperature regulation unit 52 can be appropriately suppressed.

[0091] <Specific Operation of the Substrate Processing Device>

[0092] Next, refer to Figure 5 The specific operation of the substrate processing device 1 will be explained. Figure 5 This is a flowchart illustrating the processing flow performed by the substrate processing apparatus 1 in the first embodiment. Additionally, Figure 5 Each processing step shown is executed under the control of the control unit 5.

[0093] exist Figure 5 Before the series of processes shown begins, a temperature-controlled etching solution is pre-stored in the inner tank 11. Furthermore, the temperature-controlled etching solution is supplied to the inner tank 11 from multiple first nozzles 30; in other words, the temperature-controlled etching solution circulates within the first nozzles 30, the inner tank 11, the outer tank 12, and the first supply path 50. The supply of the temperature-controlled etching solution from the first nozzles 30 continues at least until… Figure 5 The process continues until the series of steps shown ends.

[0094] like Figure 5 As shown, in the substrate processing apparatus 1, firstly, temperature-regulated etching solution is supplied from the second nozzle 40 (step S101). Specifically, the control unit 5 controls the flow regulator 61 to open the on / off valve of the flow regulator 61. Thus, the temperature-regulated etching solution flowing in the first supply path 50 is supplied to the second nozzle 40 via the second supply path 60. Then, the temperature-regulated etching solution is released into the inner tank 11 from a plurality of first release ports 411 and a plurality of second release ports 421 provided on the second nozzle 40.

[0095] Next, multiple substrates W forming a batch are fed into the interior of the inner tank 11 (step S102). Specifically, the control unit 5 controls the lifting mechanism 20 to lower the multiple substrates W held in the lifting mechanism 20 into the inner tank 11. As a result, the multiple substrates W are positioned in the immersion position within the inner tank 11.

[0096] The temperature of the etching solution in the inner tank 11 is heated by the temperature regulating unit 52, while the temperature of the multiple substrates W is at room temperature. Therefore, in step S102, when the multiple substrates W are fed into the inner tank 11, the temperature of the etching solution in the inner tank 11 decreases.

[0097] Therefore, in the substrate processing apparatus 1 of the embodiment, before immersing a plurality of substrates W in the etching solution stored in the inner tank 11 (step S102), the temperature-controlled etching solution is supplied by the second nozzle 40 (step S101).

[0098] In this way, by pre-supplying temperature-regulated etching solution from the second nozzle 40 before the temperature of the etching solution decreases, the drop in the detection temperature of the second temperature sensor 80 can be suppressed. Furthermore, the time until the detection temperature returns to its normal value can be shortened. Therefore, excessive increases in the output of the temperature regulation unit 52 can be prevented, and excessive etching of the lower part of the substrate W compared to other parts can be suppressed. That is, the reduction in the in-plane uniformity of etching of the substrate W can be suppressed.

[0099] Next, the control unit 5 determines whether the temperature difference between the etching solution at the first location detected by the first temperature sensor 70 and the temperature difference between the etching solution at the second location detected by the second temperature sensor 80 is below a threshold (step S103). The control unit 5 repeatedly performs the determination process in step S103 until the temperature difference becomes below the threshold (step S103, No). During this period, the temperature-regulated etching solution is continuously supplied using the second nozzle 40.

[0100] On the other hand, in step S103, if it is determined that the temperature difference has fallen below the threshold (step S103, yes), the control unit 5 stops supplying the temperature-adjusted etching solution using the second nozzle 40 (step S104).

[0101] Next, the control unit 5 determines whether the temperature difference exceeds a threshold (step S105). In this process, if it is determined that the temperature difference exceeds the threshold (step S105: yes), the control unit 5 starts supplying the temperature-adjusted etching solution again using the second nozzle 40 (step S106), and the process moves to step S103.

[0102] On the other hand, in step S105, if the temperature difference does not exceed the threshold (step S105: No), the control unit 5 determines whether the etching process of the multiple substrates W has ended (step S107). For example, the control unit 5 may also end the etching process of the multiple substrates W when a predetermined time has elapsed since the multiple substrates W were fed into the inner tank 11 in step S102.

[0103] In step S107, if the etching process of multiple substrates W has not been completed (step S107, No), the control unit 5 returns the process to step S105. On the other hand, if it is determined that the etching process of multiple substrates W has been completed (step S107, Yes), the control unit 5 controls the lifting mechanism 20 to raise the multiple substrates W, thereby sending the multiple substrates W out from the inner groove 11 (step S108), ending a series of substrate processes.

[0104] exist Figure 5In the example, in steps S101 and S106, the release flow rate of the temperature-regulated etching solution from the second nozzle 40 is increased from 0. However, it is not limited to this; the control unit 5 may also increase the release flow rate of the temperature-regulated etching solution from the second nozzle 40 from a first flow rate (>0) to a second flow rate (>first flow rate) in steps S101 and S106. Alternatively, in this case, the control unit 5 may also decrease the release flow rate of the temperature-regulated etching solution from the second nozzle 40 from the second flow rate to the first flow rate in step S104.

[0105] In this way, in the substrate processing apparatus 1 of the embodiment, when the temperature difference between the etchant at the first position and the etchant at the second position exceeds a threshold, the flow rate of the temperature-regulated etchant supplied from the second nozzle 40 is increased. This improves the temperature uniformity of the etchant within the inner tank 11.

[0106] Figure 6 This diagram illustrates an example of the control processing of the liquid delivery mechanism 51. In the substrate processing apparatus 1 of this embodiment, the second supply path 60 branches off from the first supply path 50 and connects to the second nozzle 40. Therefore, when the driving pressure of the liquid delivery mechanism 51 is constant, the on / off valve of the flow regulator 61 is opened, and release begins from the second nozzle 40, thereby reducing the release flow rate of the first nozzle 30.

[0107] Therefore, as Figure 6 As shown, the control unit 5 can also increase the driving pressure of the liquid delivery mechanism 51 when the flow regulator 61 opens its on / off valve and begins to release from the second nozzle 40. This suppresses the decrease in the release flow rate of the first nozzle 30.

[0108] Furthermore, by increasing the driving pressure of the liquid delivery mechanism 51, the total release flow rate of the temperature-regulated etching solution supplied to the inner tank 11 is increased. As a result, the output of the temperature regulation unit 52 can be kept constant, and the temperature difference of the etching solution in the vertical direction within the inner tank 11 can be reduced earlier.

[0109] <First Variation>

[0110] Next, refer to Figure 7 A modified example of the substrate processing apparatus 1 of the first embodiment will be described. Figure 7 This is a diagram showing the structure of the substrate processing apparatus in the first modified example. Additionally, in Figure 7 The structure of the various treatment liquid supply unit and control unit 5 connected to the outer tank 12 is omitted.

[0111] In the first embodiment described above, an example was given where the second supply path 60 branches off from the first supply path 50 and connects to the second nozzle 40. However, as... Figure 7 As shown, the second supply path 60A can also be a path independent of the first supply path 50.

[0112] like Figure 7 As shown, one end of the second supply path 60A included in the substrate processing apparatus 1A is connected to the outer tank 12, and the other end is connected to a plurality of second nozzles 40. In this second supply path 60A, starting from the upstream (outer tank 12 side), a liquid delivery mechanism 63, a flow regulator 61, a temperature regulating unit 64, and a filter 62 are sequentially arranged. The liquid delivery mechanism 63, for example, a vacuum pump, delivers the etching solution in the second supply path 60A downstream. The temperature regulating unit 64, for example, a jacketed heater, regulates the temperature of the etching solution flowing in the second supply path 60A.

[0113] Similarly, the first supply path 50 and the second supply path 60A can be independent. In this case, for example, the control unit 5 can control the temperature regulating units 52 and 64 to make the temperature of the etching solution released from the second nozzle 40 higher than the temperature of the etching solution released from the first nozzle 30. This allows the temperature difference of the etching solution in the vertical direction within the inner tank 11 to be reduced earlier.

[0114] Alternatively, the control unit 5 can control the temperature regulating unit 52 based on the temperature detected by the first temperature sensor 70, and control the temperature regulating unit 64 based on the temperature detected by the second temperature sensor 80. For example, the control unit 5 controls the temperature regulating unit 52 based on the temperature detected by the first temperature sensor 70, so that the temperature of the etching solution at the first position is close to a preset temperature. Similarly, the control unit 5 controls the temperature regulating unit 52 based on the temperature detected by the second temperature sensor 80, so that the temperature of the etching solution at the second position is close to a preset temperature. This reduces the temperature difference of the etching solution in the vertical direction within the inner tank 11.

[0115] (Second Implementation)

[0116] However, since the top of the inner tank 11 is open, the temperature of the etching solution stored in the inner tank 11 tends to be relatively lower near the liquid surface exposed to the external atmosphere.

[0117] As described above, an upward flow of liquid is formed within the inner tank 11. A portion of the etching solution that rises to the vicinity of the liquid surface in the inner tank 11 due to this flow overflows into the outer tank 12, but the remainder becomes a downward flow and flows back into the lower part of the inner tank 11.

[0118] The downflow is formed by the etchant that is cooled near the liquid surface. Therefore, a temperature drop in the etchant occurs in the region through which the downflow passes, potentially leading to a reduction in the etching depth of the substrate W located in that region. Therefore, it is desirable to reduce the temperature difference of the etchant in the vertical direction of the inner tank 11, specifically, to employ techniques that suppress the temperature drop of the etchant near the liquid surface.

[0119] Figure 8 This is a diagram showing the structure of the substrate processing apparatus according to the second embodiment. (As shown) Figure 8 As shown, in the substrate processing apparatus 1B of the second embodiment, a plurality of second nozzles 40B are positioned above the centerline L1 of the plurality of substrates W disposed at the immersion position and below the surface of the etching solution stored in the inner tank 11. Furthermore, the plurality of second nozzles 40B release temperature-regulated etching solution toward the surface of the etching solution stored in the inner tank 11.

[0120] Figure 9 This is a top view of the inner groove 11 in the second embodiment, viewed from above. Additionally, Figure 10 From Figure 9 A cross-sectional view of the inner groove 11 of the second embodiment, viewed from the negative Y-axis direction to the positive Y-axis direction.

[0121] like Figure 9 As shown, the second nozzle 40B includes: a first release portion 41B extending along the arrangement direction (Y-axis direction) of the plurality of substrates W; and a second release portion 42B extending along a horizontal direction (X-axis direction) orthogonal to the arrangement direction of the plurality of substrates W. In the first release portion 41B, a plurality of first release ports 411B are provided along the Y-axis direction. Furthermore, in the second release portion 42B, a plurality of second release ports 421B are provided along the X-axis direction. The structure of the second release portion 42B is the same as that of the second release portion 42 in the first embodiment, therefore, its description is omitted here.

[0122] like Figure 10 As shown, the first release part 41B is disposed on the side of the plurality of substrates W and releases temperature-regulated etching solution at an angle toward the surface of the etching solution located above the plurality of substrates W.

[0123] The first release section 41B releases temperature-regulated etchant at an angle where the temperature-regulated etchant is not directly supplied to the multiple substrates W. Specifically, the release direction of the temperature-regulated etchant released from the multiple first release ports 411B is inclined towards the substrate W side compared to the vertical line L3 extending vertically upward from the first release port 411B. Furthermore, the release direction of the temperature-regulated etchant released from the multiple first release ports 411B is more vertically oriented compared to the tangent line L4 of the substrate W passing through the first release port 411B.

[0124] In this way, by preventing the temperature-regulated etchant released from the first release section 41B from being directly supplied to the substrate W, it is possible to suppress the local temperature rise of the substrate W.

[0125] Next, the specific operation of the substrate processing apparatus 1B according to the second embodiment will be described. First, referring to... Figure 11 The flow control process for temperature-regulated etching solution from the second nozzle 40B is explained. Figure 11 This is a flowchart illustrating the flow control process of the second embodiment. Additionally, Figure 11 The process shown is performed continuously, for example, from the time multiple substrates W are fed into the inner tank 11 until they are ejected.

[0126] like Figure 11 As shown, the control unit 5 determines whether the temperature difference between the etching solution at the first position detected by the first temperature sensor 70 and the temperature difference between the etching solution at the second position detected by the second temperature sensor 80 has changed (step S201). If the temperature difference has not changed (step S201, no), the control unit 5 returns the process to step S201 and repeats the determination process of step S201.

[0127] In step S201, if it is determined that the temperature difference has changed (step S201, yes), the control unit 5 changes the release flow rate of the second nozzle 40B according to the temperature difference, so as to reduce the temperature difference (step S202).

[0128] The change in the release flow rate of the second nozzle 40B is achieved by controlling the flow regulator 61 located in the second supply path 60, thereby changing the opening of the regulating valve located in the flow regulator 61.

[0129] For example, the control unit 5 can also change the opening degree of the regulating valve according to the formula {1-(t0-t1) / t0}·X. In the above formula, t0 is the set temperature difference and t1 is the current temperature difference.

[0130] The set temperature difference refers to a pre-set temperature difference. For example, when the opening of the regulating valve is set to the set opening described later, the temperature difference that can be eliminated by releasing temperature-regulated etching solution from the second nozzle 40B is set as the set temperature difference t0. The current temperature difference refers to the temperature (ta-tb) obtained by subtracting the detected temperature (tb) of the second temperature sensor 80 from the detected temperature (ta) of the first temperature sensor 70.

[0131] In addition, in the above formula, X represents the set opening degree. The set opening degree refers to the pre-set opening degree of the control valve. For example, the maximum opening degree, i.e., 100%, is set as the set opening degree.

[0132] For example, if the set temperature difference is 2°C and the current temperature difference is 0°C, the opening of the regulating valve is 0% based on the above formula. That is, if there is no difference between the temperature of the etching solution at the first position and the etching temperature at the second position, the temperature-regulated etching solution is not supplied from the second nozzle 40B.

[0133] On the other hand, with a set temperature difference of 2°C and a current temperature difference of 0.5°C, based on the above formula, the opening degree of the regulating valve is 25%. Furthermore, with a current temperature difference of 1°C, the opening degree of the regulating valve is 50%.

[0134] In this way, the control unit 5 can control the regulating valve in such a way that the greater the temperature difference of the etching solution between the first position and the second position, the greater the opening of the regulating valve. This allows for an appropriate reduction in the temperature difference of the etching solution between the first position and the second position.

[0135] Next, refer to Figure 12 The control processing of the temperature regulation unit 52 will be explained. Figure 12 This is a flowchart illustrating the temperature control process of the second embodiment. Additionally, Figure 12 The process shown is performed continuously, for example, from the time multiple substrates W are fed into the inner tank 11 until they are ejected.

[0136] like Figure 12 As shown, the control unit 5 determines whether the difference between the detected temperature (first temperature) of the first temperature sensor 70 and the detected temperature (second temperature) of the second temperature sensor 80 is below a threshold (step S301).

[0137] In this determination, if the temperature difference is determined to be below a threshold (step S301, Yes), the control unit 5 controls the temperature adjustment unit 52 based on the average of the first temperature and the second temperature (step S302). Specifically, the control unit 5 controls the temperature adjustment unit 52 so that the average of the first temperature and the second temperature is close to a preset temperature.

[0138] On the other hand, if the temperature difference exceeds the threshold (step S301, no), the control unit 5 controls the temperature adjustment unit 52 based solely on the first temperature of the first temperature and the second temperature (step S303). Specifically, the control unit 5 controls the temperature adjustment unit 52 to bring the first temperature close to a preset temperature.

[0139] Furthermore, in step S302, the control unit 5 can control the temperature regulating unit 52 based on at least the first temperature and the second temperature, and the reference value is not necessarily the average of the first temperature and the second temperature. For example, the control unit 5 can also control the temperature regulating unit 52 based on the sum of the first temperature and the second temperature.

[0140] In this way, the control unit 5 can control the temperature regulating unit 52 based on both the first and second temperatures when the difference between the first and second temperatures is below a threshold, and control the temperature regulating unit 52 based only on the first temperature when the difference exceeds the threshold. The first temperature is relatively stable compared to the second temperature. Therefore, when the difference between the first and second temperatures exceeds the threshold, controlling the temperature regulating unit 52 based only on the first temperature prevents the output of the temperature regulating unit 52 from excessively increasing compared to controlling it based on both the first and second temperatures. Therefore, it is possible to suppress excessive etching of the lower part of the substrate W compared to other parts. That is, it is possible to suppress the reduction of the in-plane uniformity of the etching of the substrate W.

[0141] (Third Implementation)

[0142] The substrate processing apparatus may also include a cover that closes the upper part of the inner tank 11. Regarding this, see [reference needed]. Figures 13-15 Please provide an explanation. Figure 13 This is a diagram showing the structure of the substrate processing apparatus according to the third embodiment. Figure 14 This is a view of the cover of the third embodiment from below. Figure 15 From Figure 14 A diagram showing the cover of the third embodiment viewed from the positive X-axis direction to the negative X-axis direction.

[0143] like Figure 13 As shown, the substrate processing apparatus 1C of the third embodiment includes a pair of covers 90, 90. The pair of covers 90, 90 close the upper opening of the inner groove 11. Each cover 90 is connected to an opening and closing mechanism 95. The opening and closing mechanism 95 enables the cover 90 to move between a closed position that closes the inner groove 11 and an open position that opens the inner groove 11.

[0144] In this way, by closing the upper opening of the inner tank 11 using a pair of covers 90, 90, it is possible to suppress the temperature drop near the surface of the etching solution stored in the inner tank 11.

[0145] like Figure 14 and Figure 15 As shown, the cover 90 has a plurality of grooves 91 on its lower surface. The plurality of grooves 91 extend, for example, along a horizontal direction (X-axis direction) orthogonal to the arrangement direction of the plurality of substrates W.

[0146] In the closed position, the lower part of the cover 90 is in contact with the etching solution stored in the inner tank 11. Therefore, by forming multiple grooves 91 on the liquid-receiving surface of the cover 90, which is in contact with the etching solution, the flow of etching solution that easily forms in the inner tank 11 can be discharged to the outside of the inner tank 11, i.e., the outer tank 12. As a result, the downward flow is reduced, thereby suppressing the decrease in temperature uniformity of the etching solution in the inner tank 11 caused by the downward flow.

[0147] (Other implementation methods)

[0148] In both the substrate processing apparatus 1 of the first embodiment and the substrate processing apparatus 1B of the second embodiment, a temperature regulating unit may also be provided in the second supply path 60.

[0149] The substrate processing apparatus 1 of the first embodiment can also perform the flow control processing performed by the substrate processing apparatus 1B of the second embodiment (see reference). Figure 11 ) and temperature control processing (refer to Figure 12 ).

[0150] The substrate processing apparatus may also include both the second nozzle 40 of the first embodiment and the second nozzle 40B of the second embodiment.

[0151] As described above, the substrate processing apparatus of the embodiment (as an example, substrate processing apparatus 1, 1A-1C) includes a processing tank (as an example, the inner tank 11 of processing tank 10), a first nozzle (as an example, the first nozzle 30), a second nozzle (as an example, the second nozzles 40, 40B), and a flow control unit (as an example, the control unit 5). The processing tank immerses multiple substrates (as an example, substrate W) in a processing solution (as an example, etching solution) for processing. The first nozzle is disposed inside the processing tank at a position lower than the multiple substrates and supplies temperature-regulated processing solution to the processing tank. The second nozzle is disposed inside the processing tank at a position higher than the first nozzle and supplies temperature-regulated processing solution to the processing tank. When the temperature difference between the processing solution at the first position and the processing solution at the second position exceeds a threshold, the flow rate of the temperature-regulated processing solution supplied from the second nozzle is increased. The first position is lower than the multiple substrates, and the second position is higher than an imaginary center line (as an example, center line L1) dividing the multiple substrates vertically.

[0152] Therefore, the substrate processing apparatus according to the embodiment can improve the temperature uniformity of the processing liquid in the processing tank.

[0153] Alternatively, the second nozzle (for example, the second nozzle 40) can be positioned above the first nozzle and below the centerline, releasing the temperature-controlled treatment liquid toward the second position.

[0154] Compared to the first nozzle, the second nozzle is positioned near the second position. Therefore, by supplying temperature-controlled processing fluid from the second nozzle toward the second position, the temperature of the processing fluid at the second position can rise earlier. That is, the temperature difference of the processing fluid in the vertical direction within the processing tank can be reduced earlier.

[0155] Alternatively, the second nozzle may include: a plurality of first release ports (for example, first release port 411) arranged along the arrangement direction of the plurality of substrates; and a plurality of second release ports (for example, second release port 421) arranged along a horizontal direction orthogonal to the arrangement direction. In this case, when viewing the processing tank along the arrangement direction, the plurality of first release ports may be positioned outside the substrate than an imaginary vertical line (for example, vertical line L2) tangent to the periphery of the substrate, releasing the temperature-regulated processing liquid vertically upwards. Furthermore, when viewing the processing tank along the horizontal direction, the plurality of second release ports may be positioned outside the arrangement direction than the substrate at the beginning or end of the row of substrates, releasing the temperature-regulated processing liquid vertically upwards.

[0156] In this way, by preventing the temperature-controlled etchant released from the second nozzle from being directly supplied to the substrate, it is possible to suppress localized temperature rises in the substrate.

[0157] Alternatively, before immersing multiple substrates in the processing liquid stored in the processing tank, the flow control unit increases the flow rate of the temperature-controlled processing liquid supplied from the second nozzle, and if the temperature difference is below a threshold, decreases the flow rate of the temperature-controlled processing liquid supplied from the second nozzle.

[0158] Before the temperature of the processing fluid drops, a temperature-controlled processing fluid is supplied from the second nozzle in advance, thereby suppressing the temperature drop of the processing fluid at the second position.

[0159] Alternatively, the second nozzle (for example, the second nozzle 40B) may be positioned above the centerline and below the surface of the treatment liquid stored in the treatment tank, releasing the temperature-regulated treatment liquid toward the liquid surface.

[0160] This helps to suppress the temperature drop of the etching solution near the liquid surface, where the temperature tends to decrease. Therefore, it improves the temperature uniformity of the processing solution within the processing tank.

[0161] Alternatively, the second nozzle may include: a plurality of first release ports (as an example, first release port 411B) arranged along the arrangement direction of the plurality of substrates; and a plurality of second release ports (as an example, second release port 421B) arranged along a horizontal direction orthogonal to the arrangement direction. In this case, when viewing the processing tank along the horizontal direction, the plurality of second release ports may be positioned further outward in the arrangement direction than the substrates located at the head or tail of the row of substrates, releasing the temperature-regulated processing liquid vertically upward. Furthermore, when viewing the processing tank along the arrangement direction, the release direction of the temperature-regulated processing liquid released from the plurality of first release ports may be inclined towards the substrate side compared to vertically upward, and more vertically than the tangent of the substrate passing through the first release port.

[0162] In this way, by preventing the temperature-controlled etchant released from the second nozzle from being directly supplied to the substrate, it is possible to suppress localized temperature rises in the substrate.

[0163] The substrate processing apparatus of the embodiment may also include a first supply path (for example, first supply path 50), a temperature regulating unit (for example, temperature regulating unit 52), a first temperature sensor (for example, first temperature sensor 70), a second temperature sensor (for example, second temperature sensor 80), a second supply path (for example, second supply path 60), and a regulating valve (for example, flow regulator 61). The first supply path is connected to a first nozzle and supplies temperature-regulated processing liquid to the first nozzle. The temperature regulating unit is disposed in the first supply path and regulates the temperature of the processing liquid flowing in the first supply path. The first temperature sensor is disposed downstream of the temperature regulating unit in the first supply path and detects the temperature of the processing liquid flowing in the first supply path as the temperature of the processing liquid at a first position. The second temperature sensor detects the temperature of the processing liquid at a second position. The second supply path is connected to a second nozzle and supplies temperature-regulated processing liquid to the second nozzle. The regulating valve is disposed in the second supply path and regulates the opening degree of the second supply path. In this case, the flow control unit can control the regulating valve in such a way that the greater the difference between the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor, the greater the opening of the regulating valve. This allows for an appropriate reduction in the temperature difference of the processed liquid between the first and second positions.

[0164] The substrate processing apparatus of the embodiment may also include a liquid delivery mechanism disposed in the first supply path, which delivers the processing liquid inside the first supply path downstream. Alternatively, a second supply path may branch off from the first supply path downstream of the temperature regulation unit. In this case, the flow control unit may control the liquid delivery mechanism to increase the driving pressure of the liquid delivery mechanism when the opening of the regulating valve is increased.

[0165] The substrate processing apparatus of the embodiment may also include a temperature control unit that controls the temperature adjustment unit. Furthermore, the second supply path may branch off from the first supply path downstream of the temperature adjustment unit. In this case, the temperature control unit may control the temperature adjustment unit based on both a first temperature and a second temperature when the temperature difference is below a threshold, and control the temperature adjustment unit based only on the first temperature of the first and second temperatures when the temperature difference exceeds the threshold.

[0166] The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. In fact, the above-described embodiments can be implemented in various ways. Furthermore, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the scope and spirit of the invention (claims).

[0167] Explanation of reference numerals in the attached figures

[0168] W substrate

[0169] 1. Substrate processing device

[0170] 10 processing tanks

[0171] 11 Inner groove

[0172] 12 outer grooves

[0173] 20 Lifting mechanism

[0174] 30 First nozzle

[0175] 40 Second nozzle

[0176] 50 First Supply Path

[0177] 51 Liquid delivery mechanism

[0178] 52 Temperature Control Unit

[0179] 53 Filter

[0180] 60 Second Supply Path

[0181] 61 Flow Regulator

[0182] 62 Filters

[0183] 70 First Temperature Sensor

[0184] 80 Second temperature sensor.

Claims

1. A substrate processing apparatus, characterized in that, include: A treatment tank in which multiple substrates are immersed in a treatment solution for treatment; A first nozzle, disposed inside the processing tank at a position lower than the plurality of substrates, supplies the temperature-regulated processing liquid into the processing tank; The second nozzle, which is disposed inside the treatment tank at a position higher than the first nozzle, supplies the temperature-regulated treatment liquid into the treatment tank. and The flow control unit increases the flow rate of the temperature-regulated processing liquid supplied from the second nozzle when the temperature difference between the processing liquid at the first position and the processing liquid at the second position exceeds a threshold, wherein the first position is below the plurality of substrates and the second position is above the imaginary center line dividing the plurality of substrates vertically.

2. The substrate processing apparatus as described in claim 1, characterized in that: The second nozzle is positioned above the first nozzle and below the centerline, and releases the temperature-regulated treatment liquid toward the second position.

3. The substrate processing apparatus as described in claim 2, characterized in that: The second nozzle includes: A plurality of first release ports arranged along the arrangement direction of the plurality of substrates; and Multiple second release ports are arranged along a horizontal direction orthogonal to the stated arrangement direction. When the processing tank is viewed through the lens along the arrangement direction, the plurality of first release ports are positioned further outward from the substrate than an imaginary vertical line tangent to the periphery of the substrate, releasing the temperature-regulated processing liquid vertically upward. When the processing tank is viewed along the horizontal direction, the plurality of second release ports are positioned outside the arrangement direction of the substrate located at the head or tail of the plurality of substrates, and release the temperature-regulated processing liquid vertically upward.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: Before immersing the plurality of substrates in the processing liquid stored in the processing tank, the flow control unit increases the flow rate of the temperature-regulated processing liquid supplied from the second nozzle, and decreases the flow rate of the temperature-regulated processing liquid supplied from the second nozzle if the difference is below the threshold.

5. The substrate processing apparatus as described in claim 1, characterized in that: The second nozzle is positioned above the centerline and below the surface of the treatment liquid stored in the treatment tank, and releases the temperature-regulated treatment liquid toward the liquid surface.

6. The substrate processing apparatus as described in claim 5, characterized in that: The second nozzle includes: A plurality of first release ports arranged along the arrangement direction of the plurality of substrates; and Multiple second release ports are arranged along a horizontal direction orthogonal to the stated arrangement direction. When the processing tank is viewed along the horizontal direction, the plurality of second release ports are positioned further outward in the arrangement direction than the substrates located at the head or tail of the plurality of substrates, releasing the temperature-regulated processing liquid vertically upward. When the processing tank is viewed through the arrangement direction, the release direction of the temperature-regulated processing liquid released from the plurality of first release ports is inclined toward the substrate side compared to the vertical direction, and is more vertical than the tangent of the substrate through the first release port.

7. The substrate processing apparatus according to any one of claims 1, 2, 3, 5, and 6, characterized in that, include: A first supply path, which is connected to the first nozzle, supplies the temperature-regulated treatment liquid to the first nozzle. A temperature regulating unit is provided in the first supply path to regulate the temperature of the processing liquid flowing in the first supply path. A first temperature sensor is disposed in the first supply path downstream of the temperature regulating unit, and detects the temperature of the processing liquid flowing in the first supply path as the temperature of the processing liquid at the first location. A second temperature sensor detects the temperature of the processing liquid at the second location; A second supply path, which is connected to the second nozzle, supplies the temperature-regulated treatment liquid to the second nozzle; and A regulating valve, which is located in the second supply path, regulates the opening degree of the second supply path. The flow control unit controls the regulating valve in such a way that the greater the difference between the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor, the greater the opening of the regulating valve.

8. The substrate processing apparatus as described in claim 7, characterized in that: The system includes a liquid delivery mechanism disposed in the first supply path, which delivers the processed liquid inside the first supply path downstream. The second supply path branches off from the first supply path, which is downstream of the temperature regulating unit. When the opening of the regulating valve is increased, the flow control unit controls the liquid delivery mechanism to increase the driving pressure of the liquid delivery mechanism.

9. The substrate processing apparatus as described in claim 7, characterized in that: A temperature control unit, including the temperature regulating unit, The second supply path branches off from the first supply path, which is downstream of the temperature regulating unit. When the difference is below the threshold, the temperature control unit controls the temperature regulation unit based on both the first temperature and the second temperature; when the difference exceeds the threshold, the temperature regulation unit controls the temperature regulation unit based only on the first temperature of the first temperature and the second temperature.

10. A substrate processing method, characterized in that, include: The step of immersing multiple substrates in a processing solution stored in a processing tank; The step of supplying the temperature-regulated processing liquid to the processing tank from a first nozzle disposed inside the processing tank at a position lower than the plurality of substrates; and The step of increasing the flow rate of the temperature-regulated treatment fluid supplied from the second nozzle when the temperature difference between the treatment fluid at the first position and the treatment fluid at the second position exceeds a threshold, wherein the first position is below the plurality of substrates, the second position is above the imaginary center line dividing the plurality of substrates vertically, and the second nozzle is disposed inside the treatment tank at a position above the first nozzle.

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