Device for processing substrates

Abstract

The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing an internal space; a fluid supply unit configured to supply processing fluid to the internal space; a fluid discharge unit configured to discharge processing fluid from the internal space, wherein the fluid discharge unit includes: a discharge line connected to the chamber; a pressure regulating member installed at the discharge line and configured to maintain the pressure of the internal space at a set pressure; wherein the fluid supply unit includes: a fluid supply source; a supply line disposed between the fluid supply source and the chamber; and wherein a flow measurement member is installed at the supply line or the discharge line, the flow measurement member being configured to measure the flow rate per unit time of the processing fluid flowing in the internal space.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0076032, filed with the Korean Intellectual Property Office on June 11, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus. Background Technology

[0004] To manufacture semiconductor devices, desired patterns are formed on a substrate (e.g., a wafer) by performing various processes such as photolithography, etching, ashing, ion implantation, and thin film deposition. Various processing liquids and gases are used in each process, and particles and process byproducts are generated during the process. Cleaning processes are performed before and after each process to remove these particles and process byproducts from the substrate.

[0005] Traditional cleaning processes use chemicals and rinsing solutions to treat the substrate. Additionally, residual chemicals and rinsing solutions are dried off the substrate. One drying process can include a spin drying process, in which the substrate is rotated at high speed to remove residual rinsing solutions. However, there is a concern that this spin drying method may cause the patterns formed on the substrate to collapse.

[0006] Recently, supercritical drying processes have been used to supply organic solvents such as isopropyl alcohol (IPA) onto a substrate to replace residual rinsing liquid with an organic solvent having low surface tension. Then, a supercritical drying gas (e.g., carbon dioxide) is supplied to the substrate to remove the remaining organic solvent. In the supercritical drying process, the drying gas is supplied to a process chamber with a sealed interior, and the gas is heated and pressurized. The temperature and pressure of the drying gas rise above the critical point, and the gas phase transitions to a supercritical state.

[0007] Supercritical drying gases possess high solubility and high permeability. This means that when supercritical drying gases are supplied to a substrate, they readily permeate into the patterns on the substrate, and any remaining organic solvents on the substrate easily dissolve in the drying gas. Therefore, residual organic solvents between the patterns formed on the substrate can be easily removed.

[0008] However, the supercritical drying gas in the process chamber has almost no flow. Therefore, the supercritical drying gas may not be properly delivered to the substrate. In this case, it may not be possible to properly remove residual organic solvents from the substrate, or the supercritical drying gas containing dissolved organic solvents may not be properly discharged to the outside of the process chamber.

[0009] To solve this problem, methods such as... are typically used. Figure 1 The method shown illustrates how to change the pressure within the process chamber. (Refer to...) Figure 1 In the pressurization step S100, the pressure inside the process chamber is increased to a first pressure CP1, and in the process step S200, the pressure inside the process chamber is repeatedly varied between the first pressure CP1 and a second pressure CP2 (this is a pressure pulse), where the second pressure CP2 is lower than the first pressure CP1. Subsequently, in the exhaust step S300, the pressure inside the process chamber becomes atmospheric pressure. By repeatedly changing the pressure inside the process chamber in process step S200, a flow of supercritical dry gas is generated inside the process chamber, and the supercritical dry gas can be delivered to the substrate.

[0010] The method of repeatedly changing the pressure in the process chamber between a first pressure CP1 and a second pressure CP2 is typically performed by repeatedly opening and closing a valve installed at a supply line for supplying dry gas to the process chamber and a valve installed at a discharge line for venting the internal space of the process chamber. When the valves are repeatedly opened and closed as described above, particles may be generated at the valves, and these particles may be transported to the process chamber via the supply or discharge lines. Furthermore, the method of repeatedly changing the pressure in the process chamber between the first pressure CP1 and the second pressure CP2 increases the time required to perform process step S200. This is because there are physical limitations in process step S200 regarding the time required to reduce pressurization or depressurization. Moreover, if the valves are opened and closed rapidly to reduce the time required for pressurization or depressurization, pressurization and depressurization cannot be performed properly, which may prevent the flow of dry gas in a supercritical state. Summary of the Invention

[0011] The present invention provides a substrate processing apparatus for effectively processing substrates.

[0012] The present invention provides a substrate processing apparatus for improving the drying efficiency of substrates.

[0013] An embodiment of the present invention provides a substrate processing apparatus that reduces the time required to perform a drying process on a dry substrate.

[0014] The present invention provides a substrate processing apparatus for minimizing the generation of impurities (such as particles) during a drying process of a dried substrate.

[0015] An embodiment of the present invention provides a substrate processing apparatus for maintaining a constant pressure in the internal space of a chamber at a set pressure during a flow step.

[0016] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0017] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing an internal space; a fluid supply unit configured to supply processing fluid to the internal space; a fluid discharge unit configured to discharge processing fluid from the internal space, wherein the fluid discharge unit includes: a discharge line connected to the chamber; and a pressure regulating member installed at the discharge line and configured to maintain the pressure of the internal space at a set pressure, wherein the fluid supply unit includes: a fluid supply source; and a supply line disposed between the fluid supply source and the chamber, wherein a flow measurement member is installed at the supply line or the discharge line, the flow measurement member being configured to measure the flow rate per unit time of the processing fluid flowing in the internal space.

[0018] In an embodiment, the substrate processing apparatus further includes a controller configured to control a fluid supply unit and a fluid discharge unit, wherein the controller controls the fluid supply unit and the fluid discharge unit to perform a pressurization step and a flow step, the pressurization step being used to pressurize the pressure of the internal space to a set pressure by supplying processing fluid to the internal space, and the flow step being used to discharge processing fluid from the internal space through the fluid discharge unit to generate flow of processing fluid in the internal space when processing fluid is supplied to the internal space.

[0019] In the implementation scheme, the controller controls the fluid supply unit and the fluid discharge unit such that the difference between the flow rate per unit time of the processed fluid discharged into the internal space and the flow rate per unit time of the processed fluid supplied to the internal space during the flow step is 0 or within a critical value range.

[0020] In the implementation scheme, the controller controls the fluid supply unit and the fluid discharge unit to maintain the pressure of the internal space constant at the set pressure during the flow step.

[0021] In the implementation scheme, the controller controls the fluid supply unit and the fluid discharge unit to maintain the flow rate of the processing fluid flowing within the internal space at a constant rate per unit time as set during the flow step.

[0022] In one embodiment, the fluid supply unit further includes a flow regulating valve installed at the supply line, wherein the controller regulates the opening / closing speed of the flow regulating valve based on a measured flow rate measured by a flow measuring element.

[0023] In one implementation, the controller adjusts the opening / closing speed of the flow regulating valve so that the measured flow rate measured by the flow measuring element becomes the set flow rate in the flow step.

[0024] In one implementation, pressure measuring components are installed at the supply and discharge lines, and the controller adjusts the setpoint of the pressure regulating component based on the measured pressure measured by the pressure measuring components.

[0025] In the implementation scheme, the controller adjusts the set value of the pressure regulating member so that the measured pressure measured by the pressure measuring member becomes the set pressure in the flow step.

[0026] In the implementation scheme, the set pressure is the same as the critical pressure to keep the processed fluid in a supercritical state in the internal space, or the set pressure is higher than the critical pressure.

[0027] In the implementation scheme, the processing fluid supplied by the fluid supply source is a fluid that includes carbon dioxide (CO2).

[0028] The present invention provides a substrate processing apparatus for removing residual processing liquid from a substrate using a supercritical drying fluid. The substrate processing apparatus includes: a chamber providing an internal space; a fluid supply unit having a supply line configured to supply the drying fluid to the internal space; a fluid discharge unit having a discharge line configured to discharge the drying fluid from the internal space; and a controller configured to control the fluid supply unit and the fluid discharge unit, wherein a flow measurement member is installed at at least one of the supply line or the discharge line, the flow measurement member being configured to measure the flow rate of the drying fluid flowing within the internal space per unit time, and wherein the controller controls the fluid supply unit and the fluid discharge unit to perform a pressurization step and a flow step, the pressurization step being used to pressurize the pressure of the internal space to a set pressure by supplying the drying fluid to the internal space, and the flow step being used to supply and discharge the drying fluid to the internal space while maintaining the pressure of the internal space at the set pressure.

[0029] In the implementation scheme, the controller controls the fluid supply unit and the fluid discharge unit such that the difference between the flow rate per unit time of the drying process fluid discharged into the internal space and the flow rate per unit time of the drying fluid supplied to the internal space during the flow step is 0 or within a critical value range.

[0030] In the implementation scheme, the controller controls the fluid supply unit and the fluid discharge unit to maintain the flow rate of the dry fluid flowing within the internal space at a constant rate per unit time during the flow step.

[0031] In one embodiment, the fluid supply unit further includes a flow regulating valve installed at the supply line, wherein the controller regulates the opening / closing speed of the flow regulating valve based on a measured flow rate measured by a flow measuring element.

[0032] In one implementation, the controller adjusts the opening / closing speed of the flow regulating valve so that the measured flow rate measured by the flow measuring element becomes the set flow rate in the flow step.

[0033] In the implementation scheme, a pressure regulating component is installed at the discharge line to maintain the pressure of the internal space at a set pressure.

[0034] In one embodiment, the flow measurement component includes: a first flow measurement component installed at a supply line; and a second flow measurement component installed at a discharge line.

[0035] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber providing an internal space; a transfer robot configured to transfer a substrate having residual processing liquid into the internal space; a fluid supply unit configured to supply drying fluid to the internal space; and a fluid discharge unit configured to discharge drying fluid from the internal space. The fluid supply unit includes: a fluid supply source; a supply line configured to supply drying fluid from the fluid supply source to the internal space; and a flow regulating member mounted at the supply line and supplying the fluid to the internal space. The flow rate of the drying fluid in the internal space is adjusted to a set flow rate per unit time, and the fluid discharge unit includes: a discharge line configured to discharge the drying fluid from the internal space; and a pressure regulating member installed at the discharge line and configured to maintain the pressure of the internal space at a set pressure, wherein a flow measuring member and a pressure regulating member are installed in either the supply line or the discharge line, the flow measuring member being configured to measure the flow rate of the drying fluid flowing through the line per unit time; and the pressure regulating member being configured to measure the pressure of the drying fluid flowing through the line.

[0036] In the implementation scheme, the fluid supply unit and the fluid discharge unit further include a controller, wherein the controller controls the fluid supply unit and the fluid discharge unit to perform a pressurization step and a flow step, the pressurization step being used to pressurize the pressure of the internal space to a set pressure by supplying dry fluid to the internal space, and the flow step being used to generate a flow of dry fluid in the internal space by discharging dry fluid from the internal space while dry fluid is supplied to the internal space, such that the pressure of the internal space is constantly maintained at the set pressure in the flow step, and such that the flow rate of the dry fluid supplied to the internal space per unit time is constantly maintained at the set flow rate.

[0037] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0038] According to the embodiments of the present invention, the drying efficiency relative to the substrate can be improved.

[0039] According to the embodiments of the present invention, the time spent on performing the drying process for drying substrates can be reduced.

[0040] According to the embodiments of the present invention, the generation of impurities (such as particles) can be reduced when a drying process is performed on the substrate.

[0041] According to an embodiment of the present invention, when performing the flow step, the pressure inside the chamber can be kept constant at a set pressure.

[0042] According to an embodiment of the present invention, when performing the flow step, the flow rate of the processing fluid flowing through the internal space of the chamber can be kept constant per unit time.

[0043] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0044] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, similar reference numerals in the various drawings refer to similar parts, wherein:

[0045] Figure 1 The pressure variation in the process chamber used to perform a conventional supercritical drying process is shown.

[0046] Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically.

[0047] Figure 3schematically shown Figure 2 Implementation scheme for the liquid handling chamber.

[0048] Figure 4 schematically shown Figure 2 Implementation plan for the drying chamber.

[0049] Figure 5 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided.

[0050] Figure 6 The execution was shown Figure 5 The liquid processing chamber for the liquid processing steps.

[0051] Figure 7 The execution was shown Figure 5 The drying chamber of the first pressurization step.

[0052] Figure 8 The execution was shown Figure 5 The drying chamber in the second pressurization step.

[0053] Figure 9 The execution was shown Figure 5 The drying chamber of the flow step.

[0054] Figure 10 The execution was shown Figure 5 The first exhaust step is the drying chamber.

[0055] Figure 11 The execution was shown Figure 5 The second exhaust step is the drying chamber.

[0056] Figure 12 The pressure changes within the internal space of the body during the drying process conceived in this invention are shown.

[0057] Figure 13 It shows Figure 2 Another implementation scheme for the drying chamber. Detailed Implementation

[0058] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies will be omitted where such obscurity is unnecessarily made unclear about the essence of the inventive concept.

[0059] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that, as used in this specification, the terms “comprise,” “comprising,” “include,” and / or “including” specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “embodiment” is intended to refer to an embodiment or example.

[0060] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms unless otherwise stated. These terms are used only to distinguish one element, component, region, layer, and / or segment from another. Therefore, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment without departing from the teachings of the inventive concept.

[0061] It should be understood that when a component or layer is referred to as "on another component or layer," "connected to," "coupled to," or "covering" another component or layer, the component or layer may be directly on, connected to, coupled to, or cover the other component or layer, or there may be intermediate components or layers. Conversely, when a component is referred to as "directly on another component or layer," "directly connected to," or "directly coupled to" another component or layer, there may be no intermediate components or layers. Other terms such as "between," "adjacent," and "close to" should be interpreted in the same manner.

[0062] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly accepted by one of ordinary skill in the art to which the inventive concept pertains. Unless expressly defined in this application, terms such as those defined in common dictionaries should be interpreted as consistent with the content of the relevant art, rather than as ideal or overly formal.

[0063] Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically.

[0064] Reference Figure 2The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller 30. The indexing module 10 and the processing module 20 are arranged in one direction. In the following text, the direction in which the indexing module 10 and the processing module 20 are arranged will be referred to as the first direction X, the direction perpendicular to the first direction X when viewed from above will be referred to as the second direction Y, and the direction perpendicular to both the first direction X and the second direction Y will be referred to as the third direction Z.

[0065] The indexing module 10 transfers the substrate W from the container C storing the substrate W to the processing module 20, and stores the substrate W, which has already been processed in the processing module 20, within the container C. The longitudinal direction of the indexing module 10 is arranged in the second direction Y. The indexing module 10 has a loading port 12 and an index frame 14. The index frame 14 is located between the loading port 12 and the processing module 20. The container C storing the substrate W is placed on the loading port 12. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged along the second direction Y.

[0066] For container C, a sealed container, such as a front-open unified pod (FOUP), can be used. Container C can be placed on loading port 12 by a conveyor (not shown) or by an operator, such as an overhead conveyor, overhead transport vehicle, or automated guided vehicle.

[0067] An indexing frame 14 is equipped with an indexing robot 120. A guide rail 124 can be provided in the indexing frame 14, the longitudinal direction of which is in a second direction Y, and the indexing robot 120 can be mounted along the guide rail 124. The indexing robot 120 may include a hand 122 on which a substrate W is placed, and the hand 122 may be movable forward and backward, rotatable about a third direction Z, and movable along a third direction Z. Multiple hands 122 may be provided, spaced apart in the up / down direction, and the hands 122 may be independently movable forward and backward.

[0068] Controller 30 can control the substrate processing apparatus. The controller may include: a process controller, such as a microprocessor (computer) that performs control of the substrate processing apparatus; a user interface, such as a keyboard for operator input to manage the substrate processing apparatus; a display for visualizing and displaying the operation of the substrate processing apparatus; and a storage unit that stores control programs, various data, and programs (i.e., processing schemes) for executing processes in the substrate processing apparatus under the control of the process controller, and for executing various processes in each component according to processing conditions. Furthermore, the user interface and storage unit can be connected to the process controller. Processing recipes can be stored in a storage medium within the storage unit, and this storage medium can be a hard disk, a portable disk (e.g., a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0069] The controller 30 can control the substrate processing apparatus to perform the substrate processing method described below. For example, the controller 30 can control the fluid supply unit 530 and the fluid discharge unit 500 to perform the substrate processing method.

[0070] The processing module 20 includes a buffer unit 200, a transfer chamber 300, a liquid processing chamber 400, and a drying chamber 500. The buffer unit 200 provides space in which substrates W loaded into and unloaded from the processing module 20 temporarily reside. The liquid processing chamber 400 supplies liquid to the substrates W to perform a liquid processing process on the substrates W. The drying chamber 500 performs a drying process to remove any remaining liquid from the substrates W. The transfer chamber 300 transfers the substrates W between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500.

[0071] The longitudinal direction of the transfer chamber 300 can be arranged in the first direction X. The buffer unit 200 can be arranged between the index module 10 and the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 can be arranged on one side of the transfer chamber 300. The liquid processing chamber 400 and the transfer chamber 300 can be arranged along the second direction Y. The drying chamber 500 and the transfer chamber 300 can be arranged along the second direction Y. The buffer unit 200 can be located at the end of the transfer chamber 300.

[0072] According to the implementation scheme, the liquid processing chamber 400 can be disposed on both sides of the transfer chamber 300, and the drying chamber 500 can be disposed on both sides of the transfer chamber 300, with the liquid processing chamber 400 disposed closer to the buffer unit 200 than the drying chamber 500. In some implementation schemes, on one and / or both sides of the transfer chamber 300, the liquid processing chamber 400 can be arranged in an array of AXB (A and B are natural numbers 1 or greater than 1) along the first direction X and the third direction Z. In some implementation schemes, on one and / or both sides of the transfer chamber 300, the drying chamber 500 can be arranged in an array of CXD (C and D are natural numbers 1 or greater than 1) along the first direction X and the third direction Z. In some implementation schemes, the liquid processing chamber 400 can be disposed only on one side of the transfer chamber 300, and the drying chamber 500 can be disposed only on the other side of the transfer chamber 300.

[0073] The transfer chamber 300 includes a transfer robot 320. A guide rail 324 can be provided in the transfer chamber 300, with its longitudinal direction aligned in a first direction X, and the transfer robot 320 can be configured to move along the guide rail 324. The transfer robot 320 may include a hand 322 on which a base plate W is placed, and the hand 322 can be configured to move forward and backward, rotatable about a third direction Z (which serves as an axis), and movable along the third direction Z. Multiple hands 322 are spaced apart in the up / down direction, and each hand 322 can move forward and backward independently of the others.

[0074] The buffer unit 200 includes a plurality of buffers 220 on which the substrate W is placed. The buffers 220 may be configured to be spaced apart from each other in the third direction Z. The front and back sides of the buffer unit 200 are open. The front side is the surface facing the index module 10, and the back side is the surface facing the transfer chamber 300. The indexing robot 120 can enter the buffer unit 200 through the front side, and the transfer robot 320 can enter the buffer unit 200 through the back side.

[0075] Figure 3 It is shown schematically. Figure 2 A diagram illustrating an implementation scheme for a liquid handling chamber. (Reference) Figure 3 The liquid handling chamber 400 includes a housing 410, a cup-shaped object 420, a support unit 440, a liquid supply unit 460, and a lifting / lowering unit 480.

[0076] The housing 410 may have an internal space in which the substrate W is processed. The housing 410 may have a generally hexahedral shape. For example, the housing 410 may have a rectangular parallelepiped shape. Furthermore, an opening (not shown) may be formed in the housing 410 through which the substrate W is fed or removed. In addition, a door (not shown) may be installed at the housing 410 for selectively opening and closing the opening.

[0077] The cup-shaped object 420 may have a container shape with an open top. The cup-shaped object 420 may have a processing space in which the substrate W can undergo liquid processing. A support unit 440 supports the substrate W within the processing space. A liquid supply unit 460 supplies processing liquid to the substrate W supported by the support unit 440. The processing liquid can be provided in various types and can be supplied sequentially to the substrate W. A lifting / lowering unit 480 adjusts the relative height between the cup-shaped object 420 and the support unit 440.

[0078] In one embodiment, the cup-shaped object 420 has a plurality of recollection containers 422, 424, and 426. Each of the recollection containers 422, 424, and 426 has a recollection space for recollecting liquid used in substrate processing. Each of the recollection containers 422, 424, and 426 is arranged in an annular shape around the support unit 440. During the liquid processing process, the processing liquid scattered by the rotation of the substrate W is introduced into the recollection space through the inlets 422a, 424a, and 426a of the respective recollection containers 422, 424, and 426. According to one embodiment, the cup-shaped object 420 has a first recollection container 422, a second recollection container 424, and a third recollection container 426. The first recollection container 422 is arranged around the support unit 440, the second recollection container 424 is arranged around the first recollection container 422, and the third recollection container 426 is arranged around the second recollection container 424. The second inlet 424a for introducing liquid into the second recollection container 424 may be located above the first inlet 422a for introducing liquid into the first recollection container 422, and the third inlet 426a for introducing liquid into the third recollection container 424a may be located above the second inlet 424a.

[0079] The support unit 440 includes a support plate 442 and a drive shaft 444. The top surface of the support plate 442 is substantially circular, and the diameter of the support plate may be larger than the diameter of the substrate W. A support pin 442a is disposed at the center of the support plate 442 to support the bottom surface of the substrate W, and the support pin 442a is configured to protrude from the support plate 442 such that the substrate W is spaced apart from the support plate 442 by a predetermined distance. A chuck pin 442b is disposed at the edge of the support plate 442. The chuck pin 442b is configured to protrude upward from the support plate 442 and support the side surface of the substrate W, such that the substrate W is stably held by the support unit 440 when the substrate W rotates. The drive shaft 444, driven by the driver 446, is connected to the center of the bottom surface of the substrate W and rotates the support plate 442 based on its central axis.

[0080] According to the embodiment, the liquid supply unit 460 may include nozzles 462. Nozzles 462 can supply a processing liquid to the substrate W. The processing liquid may be a chemical, a rinsing liquid, or an organic solvent. The chemical may be a chemical with strong acid or strong base properties. Furthermore, the rinsing liquid may be deionized water. Furthermore, the organic solvent may be isopropyl alcohol (IPA). In addition, the liquid supply unit 460 may include multiple nozzles 462, and each nozzle 462 may supply different types of processing liquids. For example, one nozzle 462 may supply a chemical, another nozzle 462 may supply a rinsing liquid, and yet another nozzle 462 may supply an organic solvent. Furthermore, the controller 30 may control the liquid supply unit 460 to supply the rinsing liquid to the substrate W from one nozzle 462, and then supply the organic solvent to the substrate W from yet another nozzle 462. Therefore, the rinsing liquid supplied to the substrate W can be replaced with an organic solvent with a lower surface tension.

[0081] The lifting / lowering unit 480 moves the cup-shaped object 420 in the up / down direction. The relative height between the cup-shaped object 420 and the substrate W is changed by the vertical up / down movement of the cup-shaped object 420. As a result, the recollection containers 422, 424, 426 for recollecting the processed liquid are changed according to the type of liquid supplied to the substrate W, allowing for individual recollection of the liquid. Unlike the above description, the cup-shaped object 420 is fixedly mounted, and the lifting / lowering unit 480 can move the support unit 440 in the up / down direction.

[0082] Figure 4 To illustrate Figure 2 A diagram illustrating an implementation scheme for the drying chamber. (Reference) Figure 4According to an embodiment of the invention, the drying chamber 500 can remove residual processing liquid from the substrate W by using a drying fluid G in a supercritical state. The drying fluid G can be referred to as the processing fluid. For example, the drying chamber 500 can perform a drying process that uses supercritical carbon dioxide (CO2) to remove residual organic solvents from the substrate W.

[0083] The drying chamber 500 may include a body 510, a temperature regulating component 520, a fluid supply unit 530, a fluid discharge unit 550, and a lifting / lowering component 560.

[0084] The body 510 may have an internal space 518 for processing the substrate W. The body 510 may provide an internal space 518 for processing the substrate W. The body 510 may provide an internal space 518 in which the substrate W is dried by a drying fluid G in a supercritical state. The body 510 may also be referred to as a chamber or container.

[0085] The body 510 may include a top body 512 and a bottom body 514. The top body 512 and the bottom body 514 may be coupled together to form an internal space 518. A substrate W may be supported within the internal space 518. For example, the substrate W may be supported by a support member (not shown) at the internal space 518. The support member may be configured to support the bottom surface of an edge region of the substrate W. Either the top body 512 or the bottom body 514 may be coupled to a lifting / lowering member 560 for vertical movement. For example, the bottom body 514 may be coupled to the lifting / lowering member 560 for vertical movement via the lifting / lowering member 560. Thus, the internal space 518 of the body 510 may be selectively sealed. In the embodiments described above, the bottom body 514 is coupled to the lifting / lowering member 560 for vertical movement, but the invention is not limited thereto. For example, the top body 512 may be coupled to the lifting / lowering member 560 for vertical movement.

[0086] The temperature regulating member 520 can heat the dry fluid G supplied to the internal space 518. The temperature regulating member 520 can increase the temperature of the internal space 518 of the body 510, thereby changing the state of the dry fluid G supplied to the internal space 518 to a supercritical state. Furthermore, the temperature regulating member can increase the temperature of the internal space 518 of the body 510, thereby maintaining the supercritical dry fluid G supplied to the internal space 518 in a supercritical state.

[0087] Furthermore, the temperature regulating member 520 may be embedded in the body 510. For example, the temperature regulating member 520 may be embedded in either the top body 512 or the bottom body 514. For example, the temperature regulating member 520 may be disposed in the bottom body 514. However, the inventive concept is not limited thereto, and the temperature regulating member 520 may be disposed in various locations capable of increasing the temperature of the interior space 518. Furthermore, the temperature regulating member 520 may be a heater. However, the inventive concept is not limited thereto, and the temperature regulating member 520 may be modified differently to be a known device capable of increasing the temperature of the interior space 518.

[0088] The fluid supply unit 530 can supply dry fluid G to the internal space 518 of the body 510. The dry fluid G supplied by the fluid supply unit 530 may include carbon dioxide (CO2). The fluid supply unit 530 may include a fluid supply source 531, a flow measurement component 532, a supply line 533, a supply valve 535, a flow regulating valve 357, a first pressure sensor 538, and a line heater 359.

[0089] Fluid supply source 531 can store and / or supply dry fluid G, which is supplied to the internal space 518 of body 510. The dry fluid G stored and / or supplied by fluid supply source 531 can be supplied to the internal space 518 through supply line 533.

[0090] Flow measurement component 532 can be installed at the supply line 533. Flow measurement component 532 can be a mass flow meter. Flow measurement component 532 can measure the supply flow rate of the dry fluid G flowing through the supply line 533 (described later) per unit time. For example, flow measurement component 533 can be installed at the main supply line 533a (described later). Alternatively, flow measurement component 533 can be located between the fluid supply source 531 and the main supply valve 535a (described later). The flow rate of the dry fluid G flowing in the internal space 518 per unit time can be measured by the supply flow rate measured by flow measurement component 532. The measured flow rate measured by flow measurement component 532 can be transmitted to controller 30 in real time.

[0091] The supply line 533 provides fluid communication between the fluid supply source 531 and the internal space 518. The supply line 533 may include a main supply line 533a, a first supply line 533b, and a second supply line 533c. One end of the main supply line 533a may be connected to the fluid supply source 531. The other end of the main supply line 533a may branch into the first supply line 533b and the second supply line 533c.

[0092] Furthermore, the first supply line 533b can be a top supply line that supplies dry gas from above the interior space 518 of the body 510. For example, the first supply line 533b can supply dry gas to the interior space 518 of the body 510 in a top-to-bottom direction. For example, the first supply line 533b can be connected to the top body 512. Furthermore, the second supply line 533c can be a bottom supply line that supplies dry gas below the interior space 518 of the body 510. For example, the second supply line 533c can supply dry gas to the interior space 518 of the body 510 in a bottom-to-top direction. For example, the second supply line 533c can be connected to the bottom body 514.

[0093] The supply valve may include a main supply valve 535a, a first supply valve 535b, and a second supply valve 535c.

[0094] The main supply valve 535a can be installed at the main supply line 533a, and this main supply valve is an on / off valve (automatic valve). The first supply valve 535b can be installed at the first supply line 533b, and this first supply valve is an on / off valve (automatic valve). The second supply valve 535c can be installed at the second supply line 533c, and this second supply valve is an on / off valve (automatic valve). The main supply valve 535a, the first supply valve 535b, and the second supply valve 535c can be opened / closed by receiving control signals from the controller 30.

[0095] Furthermore, the flow control valve 537 can be installed at the main supply line 533a. The flow control valve 537 can be a valve capable of adjusting the opening / closing speed. The flow control valve 537 can be a metering valve. The flow control valve 537 can be installed downstream of the main supply valve 535a. The flow control valve 537 can receive a control signal from the controller 30 to adjust the opening / closing speed. Alternatively, the flow control valve 537 can also be manually set by the user to set the opening / closing speed.

[0096] The first pressure measuring component 538 can be installed at the supply line 533. The first pressure measuring component 538 can be installed on the first supply line 533b within the supply line 533. The first pressure measuring component 538 can measure the pressure of the dry fluid G flowing through the first supply line 533b. Furthermore, the first pressure measuring component 538 can be installed downstream of the first supply valve 535b. The area downstream of the first supply valve 533b in the first supply line 533b can be a space in fluid communication with the internal space 518. The pressure measured by the first pressure measuring component 538 can be the same as or similar to the pressure in the internal space 518. The pressure change measured by the first pressure measuring component 538 can be similar in form to the pressure change in the internal space 518.

[0097] Heater 539 may include a main heater 539a, a first heater 539b, and a second heater 539c. The main heater 539a, which is a block heater, may be installed at the main supply line 533a. The main heater 539a may be installed downstream of the flow control valve 537 (at its rear end). The first heater 539b, which is a block heater, may be installed at the first supply line 533b. The first heater 539b may be installed downstream of the point where the main supply line 533a branches off and upstream of the first supply valve 535b. The second heater 539c, which is a block heater, may be installed at the second supply line 533c. The second heater 539c may be installed downstream of the point where the main supply line 533a branches off and upstream of the second supply valve 535c.

[0098] The fluid discharge unit 550 can discharge dry fluid G from the internal space 518 of the body 510. The fluid discharge unit 550 may include discharge lines, such as a main discharge line 551, a flow line 553, a slow exhaust line 555, and a fast exhaust line 557. Furthermore, the fluid discharge unit 550 may include discharge valves installed at the discharge lines, such as a first discharge valve 533a, a second discharge valve 555a, and a third discharge valve 557a. Additionally, the fluid discharge unit 550 may include orifices such as a pressure regulating member 553b installed at the discharge lines, as well as orifices such as a slow exhaust line orifice 555b and a fast exhaust line orifice 557b.

[0099] The main discharge line 551 can be connected to the body 510. The main discharge line 551 can discharge the dry fluid G supplied to the interior space 518 of the body 510 to the outside of the body 510. For example, one end of the main discharge line 551 can be connected to the body 510. The end of the main discharge line 551 can be connected to either the top body 512 or the bottom body 514. For example, one end of the main discharge line 551 can be connected to the bottom body 514. Furthermore, the other end of the main discharge line 551 can be branched. For example, the other end of the main discharge line 551 can be branched. Lines branching from the main discharge line 551 can include a flow line 553, a slow exhaust line 555, and a fast exhaust line 557.

[0100] The flow line 553 can branch off from the other end of the main discharge line 551. A first discharge valve 553a, a pressure regulating member 553b, and a second pressure measuring member 559 can be installed at the main discharge line 551. The first discharge valve 553a can be installed upstream of the pressure regulating member 553b. The first discharge valve 553a can be an on / off valve (automatic valve). The first discharge valve 553a can selectively allow the drying fluid G to flow in the main discharge line 551. Furthermore, the flow line 553 can be used for the flow step S33 described later.

[0101] Furthermore, the pressure regulating member 553b can maintain the pressure of the internal space 518 of the body 510 at a constant set pressure. Additionally, the pressure regulating member 553b can regulate the discharge flow rate of the drying fluid G discharged through the flow line 553 per unit time to maintain the pressure of the internal space 518 of the body 510 at the set pressure. For example, the pressure regulating member 553b can be a back pressure regulator (BPR). For example, assuming the set pressure of the internal space 518 of the body 510 is 150 bar, the pressure regulating member 553b can prevent the drying fluid G from being discharged through the flow line 553 until the set pressure of the body 510 reaches 150 bar. Furthermore, when the pressure of the internal space 518 of the body 510 reaches a pressure higher than the set pressure, such as 170 bar, the drying fluid G can be discharged through the flow line 553, allowing the pressure of the internal space 518 of the body 510 to decrease to 150 bar. Moreover, the set value (e.g., the set pressure) of the pressure regulating member 553b can be adjusted by a control signal transmitted by the controller 30. Alternatively, the setting value (e.g., the set pressure) of the pressure regulating member 553b can be manually set by the user.

[0102] A slow exhaust line 555 can branch off from the other end of the main exhaust line 551. The slow exhaust line 555 can reduce the pressure in the internal space 518 of the body 510. The slow exhaust line 555 can be used in the first exhaust step S34 (described later). A second exhaust valve 555a and a slow exhaust line orifice 555b can be installed at the slow exhaust line 555. The second exhaust valve 555a can be installed upstream of the slow exhaust line orifice 555b. The second exhaust valve 555a can be an on / off valve (automatic valve). Furthermore, the diameter of the flow path of the slow exhaust line orifice 555b can be smaller than the diameter of the flow path of the fast exhaust line orifice 557b (described later).

[0103] A rapid exhaust line 557 can branch off from the other end of the main exhaust line 551. The rapid exhaust line 557 can reduce the pressure in the internal space 518 of the body 510. The rapid exhaust line 557 can be used in the second exhaust step S35 (described later). A third exhaust valve 557a and a rapid exhaust line orifice 557b can be installed at the rapid exhaust line 557. The third exhaust valve 557a can be installed upstream of the rapid exhaust line orifice 555b. The third exhaust valve 557a can be an on / off valve (automatic valve). Furthermore, the diameter of the flow path of the rapid exhaust line orifice 557b can be larger than the diameter of the flow path of the slow exhaust line orifice 555b (described later).

[0104] The second pressure measuring component 559 can be installed at the supply line 533. The second pressure measuring component 559 can also be installed on the main discharge line 551 in the discharge line. The second pressure measuring component 559 can measure the pressure of the dry fluid G flowing in the main discharge line 551. Furthermore, the second pressure measuring component 559 can be installed upstream of discharge valves 553a, 555a, and 557a. The area upstream of discharge valves 553a, 555a, and 557a of the main discharge line 551 can be a space in fluid communication with the internal space 518. The pressure measured by the second pressure measuring component 559 can be the same as or similar to the pressure in the internal space 518. The shape of the pressure change measured by the second pressure measuring component 559 can be similar to the shape of the pressure change in the internal space 518.

[0105] The following describes a method for processing a substrate according to an embodiment of the present invention. The substrate processing method described below can be performed by a substrate processing apparatus. As described above, the controller 30 can control the substrate processing apparatus so that it can perform the substrate processing method described below.

[0106] Figure 5 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided. (Refer to...) Figure 5 The substrate processing method according to an embodiment of the present invention may include a liquid processing step S10, a transfer step S20, and a drying step S30.

[0107] Liquid processing step S10 can be a step of liquid processing the substrate W by supplying processing liquid to the substrate W. Liquid processing step S10 can be performed in the liquid processing chamber 400. For example, in liquid processing step S10, the substrate W can be liquid processed by supplying processing liquid to the rotating substrate W (see [link to documentation]). Figure 6The processing liquid supplied in the liquid processing step S10 can be at least one of the chemicals, rinsing liquids, and organic solvents described above. For example, in the liquid processing step S10, the substrate W can be rinsed by supplying rinsing liquid to the rotating substrate W. Thereafter, an organic solvent can be supplied to the rotating substrate W to replace any remaining rinsing liquid on the substrate W.

[0108] Transfer step S20 is the step of transferring the substrate W. Transfer step S20 can be the step of transferring the substrate W to the drying chamber 500, where the substrate W has already undergone liquid treatment in the liquid treatment chamber 400. For example, in transfer step S20, the transfer robot 320 can transfer the substrate W from the liquid treatment chamber 400 to the drying chamber 500. In transfer step S20, the processing liquid may remain on the substrate W to be transferred. For example, organic solvent may remain on the substrate W. That is, the substrate W can be transferred to the drying chamber 500 while still wetted with organic solvent.

[0109] Drying step S30 is the step of drying the substrate W. Drying step S30 can be performed in the drying chamber 500. In drying step S30, the substrate W is dried by supplying drying fluid G from the internal space 518 of the body 510 to the substrate W. The drying fluid G supplied to the substrate W in drying step S30 can be in a supercritical state. For example, the drying fluid G can be converted to a supercritical state and introduced into the internal space 518, and the drying fluid G can be converted to a supercritical state within the internal space 518.

[0110] The drying step S30 may include pressurization steps S31 and S32, flow step S33, and exhaust steps S34 and S35. Pressurization steps S31 and S32 may be steps to pressurize the pressure in the internal space 518 of the body 510 to a set pressure.

[0111] The flow step S33 can be performed after the pressurization steps S31 and S32. The flow step S33 can be a step of generating flow in the supercritical dry fluid G supplied to the internal space 518 of the body 510.

[0112] The venting steps S34 and S35 can be performed after the flow step S33. In the venting steps S34 and S35, the pressure in the internal space 518 of the body 510 can be reduced. For example, in the venting steps S34 and S35, the pressure in the internal space 518 of the body 510 can be reduced to atmospheric pressure.

[0113] The pressurization steps S31 and S32, the flow step S33, and the exhaust steps S34 and S35 described above will be described in more detail below.

[0114] The pressurization steps S31 and S32 may include a first pressurization step S101 and a second pressurization step S32.

[0115] In the first pressurization step S31, the second supply line 533c can supply the drying fluid G to the internal space 518 of the body 510 (see...). Figure 7 In other words, in the first pressurization step S31, the drying fluid G can be supplied to the lower part of the internal space 518 of the body 510, specifically to the bottom of the substrate W supported in the internal space 518. In the first pressurization step S31, the pressure in the internal space 518 of the body 510 can be increased to a second set pressure P2. The second set pressure P2 can be 120 bar. Furthermore, when performing the first pressurization step S31, the first discharge valve 553a can remain open. Since the pressure in the internal space 518 of the body 510 does not reach the desired pressure (e.g., the second pressure P2 described later) in the first pressurization step S31, the drying fluid G will not flow through the pressure regulating member 553b in the flow line 553b even when the first discharge valve 553a is open.

[0116] In the second pressurization step S32, the first supply line 533a can supply the drying fluid G to the internal space 518 of the body 510 (see...). Figure 8 In other words, in the second pressurization step S32, the drying fluid G can be supplied from above the internal space 518, specifically, to the top of the substrate W supported in the internal space 518. In the second pressurization step S32, the pressure in the internal space 518 of the body 510 can be increased to a first set pressure P1. The first set pressure P1 can be 150 bar. The first set pressure P1 can be equal to or higher than a critical pressure that allows the drying fluid G to remain in a supercritical state in the internal space 518. Furthermore, when performing the second pressurization step S32, the first discharge valve 553a can remain open. Since the pressure in the internal space 518 of the body 510 does not reach the desired pressure (e.g., the second pressure P2) in the second pressurization step S32, the drying fluid G may not flow through the pressure regulating member 553b in the flow line 553b even when the first discharge valve 553a is open.

[0117] In the above embodiments, as an example, the second pressurization step S32 is described as supplying the drying fluid G through the first supply line 533a, but the present invention is not limited thereto. For example, the second pressurization step S32 can be performed by supplying the drying fluid G through the second supply line 533c, or alternatively, by supplying the drying fluid G through the first supply line 533a and the second supply line 533c.

[0118] When pressurization steps S31 and S32 are performed, the pressure in the internal space 518 can reach the desired pressure. During pressurization steps S31 and S32, the internal space 518 can be heated by the heating element 520. Therefore, the dried fluid G supplied to the internal space 518 can undergo a phase transition to a supercritical state. However, the inventive concept is not limited to this; the dried fluid G can be supplied to the internal space 518 in a supercritical state. In this case, since the internal space 518 reaches the desired pressure (e.g., a first set pressure P1) during pressurization steps S31 and S32, the dried fluid G supplied to the internal space 518 in a supercritical state can remain in a supercritical state.

[0119] In flow step S33, flow can occur relative to the supercritical dry fluid G supplied to the internal space 518. In flow step S33, the first supply line 533a can continuously supply the dry fluid G, while the flow line 553 can continuously discharge the dry fluid G (see...). Figure 9 In other words, the supply and discharge of the dry fluid G can be performed simultaneously. That is, in flow step S33, while the fluid supply unit 530 supplies the dry fluid G to the internal space 518, the fluid discharge unit 550 can continue to discharge the dry fluid G from the internal space 518.

[0120] In flow step S33, the pressure in the internal space 518 can be kept constant at a set pressure. Furthermore, in flow step S33, the flow rate of the dry fluid G flowing in the internal space 518 per unit time can be kept constant at a set flow rate.

[0121] Regarding maintaining a constant pressure in the internal space 518 during flow step S33, the first discharge valve 553a installed at the front end of the pressure regulating member 553b can remain open during flow step S33. Furthermore, the second discharge valve 555a and the third discharge valve 557a can remain closed during flow step S33. The pressure regulating member 553b can regulate the discharge flow rate of the dry fluid G flowing in the flow line 553 per unit time to maintain the pressure in the internal space 518 constant at a first set pressure P1 (e.g., 150 bar). Furthermore, the supply flow rate of the dry fluid G supplied by the first supply line of the fluid supply unit 530 and the discharge flow rate of the fluid discharged through the flow line 553 to the fluid discharge unit 550 can be kept the same (i.e., the difference between the supply flow rate and the discharge flow rate can be zero or within a threshold). In other words, in the flow step S33, the first supply line 533a continuously supplies the dry fluid G, and the flow line 553 continuously discharges the dry fluid G, thereby continuously generating the flow of the dry fluid G in the internal space 518.

[0122] Furthermore, in flow step S33, the setpoint of pressure adjusting member 553b can be adjusted based on the measured pressure measured by the first pressure measuring member 538 or the second pressure measuring member 559. Hereinafter, the measured pressure can be the pressure actually measured by the first pressure measuring member 538 or the second pressure measuring member 559, or the pressure estimated by converting the pressure actually measured by the first pressure measuring member 538 or the second pressure measuring member 559. During flow step S33, controller 30 can generate a control signal for adjusting the setpoint of pressure adjusting member 553b based on the measured pressure measured by the first pressure measuring member 538 or the second pressure measuring member 559—this setpoint can be adjusted by adjusting screws, etc., so that the pressure in the internal space 518 is constantly maintained at a first set pressure P1. Alternatively, the user can manually adjust the setpoint of pressure adjusting member 553b.

[0123] Furthermore, even if the pressure in the internal space 518 is kept constant at the first set pressure P1 during flow step S33, the flow rate per unit time of the dry fluid G flowing in the internal space 518 during flow step S33 can be different. For example, when the pressure in the internal space 518 is kept constant at the first set pressure P1, the flow rate per unit time of the dry fluid G flowing in the internal space 518 can be the first flow rate or a second flow rate different from the first flow rate. Therefore, it may be important not only to keep the pressure in the internal space 518 at the first set pressure P1 during flow step S33, but also to constantly adjust the flow rate per unit time (i.e., the mass flow rate of the dry fluid G flowing in the internal space 518).

[0124] According to an embodiment of the present invention, a flow measurement member 532 may be installed at the supply line 533 to measure the flow rate per unit unit of the dry fluid G that remains constant in the internal space 518 during flow step S33. The measured flow rate measured by the installed flow measurement member 532 can be transmitted to the controller 30. The measured flow rate may be the actual flow rate measured by the flow measurement member 532, or it may be obtained by estimating the flow rate per unit time of the dry fluid G flowing in the internal space 518 during flow step S33 by converting the actual flow rate measured by the flow measurement member 532.

[0125] When performing flow step S33, the controller 30 can generate a control signal for adjusting the opening / closing speed of the flow regulating valve 537 based on the measured flow rate measured by the flow measuring member 532, thereby keeping the flow rate of the dry fluid G flowing in the internal space 518 constant at the set flow rate. Alternatively, the user can manually adjust the opening / closing speed of the flow regulating valve 537.

[0126] In the first exhaust step S34, the dry fluid G is discharged through the slow exhaust line 555, but the fluid supply unit 530 can stop supplying the dry fluid G (see...). Figure 10 Therefore, the pressure in the internal space 518 can be reduced. Furthermore, in the first exhaust step S34, the second exhaust valve 555a can be opened and can remain open. Additionally, in the first exhaust step S34, the first exhaust valve 553a and the third exhaust valve 557a can remain closed.

[0127] In the second exhaust step S35, the dry fluid G is discharged through the fast exhaust line 557, but the fluid supply unit 530 can stop supplying the dry fluid G (see [link]). Figure 11 Therefore, the pressure in the internal space 518 can be reduced. Furthermore, in the second venting step S35, the third venting valve 557a can be opened and can remain open. Additionally, in the second venting step S35, the first venting valve 553a and the second venting valve 555a can remain closed.

[0128] Furthermore, as described above, since the flow path diameter of the slow exhaust line orifice 555b is smaller than that of the fast exhaust line orifice 557b, the decompression rate in the first exhaust step S34 may be slower than the decompression rate in the second exhaust step S35.

[0129] Figure 12 The pressure changes within the body's internal space during the drying process conceived in this invention are shown. (Refer to...) Figure 12 In the first pressurization step S31, the pressure in the internal space 518 can be increased to a second set pressure P2. The second set pressure P2 can be approximately 120 bar. In the second pressurization step S32, the pressure in the internal space 518 can be increased to a first set pressure P1. The first set pressure P1 can be approximately 150 bar. In the flow step S33, the pressure in the internal space 518 can be maintained at the first set pressure P1. The depressurization of the internal space 518 can be performed slowly in the first venting step S34, and the depressurization of the internal space 518 can be performed rapidly in the second venting step S35.

[0130] The effects of the present invention will be described in detail below.

[0131] The table below shows the number of particles remaining on the substrate W when the flow step S33 is performed using the pressure pulse method described above, and when the flow step S33 is performed using the continuous method of the present invention via the flow line 553. In this case, the pressurization steps S31 and S32 and the venting steps S34 and S35 are performed simultaneously. Additionally, the condition for leaving a certain amount of organic solvent on the substrate W is performed in the same manner.

[0132] [Table 1]

[0133]

[0134]

[0135] As can be seen from the table above, when the continuous method of the present invention is used to perform the flow step S33, compared with the conventional pressure pulse method, even if the set time for performing the flow step S33 is reduced, the number of remaining particles on the substrate W remains the same or less. That is, according to the embodiment of the present invention, the number of remaining particles on the substrate W can be maintained at the same level or lower than before while reducing the time required to process the substrate W. Furthermore, experimental data shows that the set times t2 to t3 for performing the flow step S33 can be performed anytime within the range of 20 seconds to 65 seconds, preferably anytime within the range of 25 seconds to 65 seconds. For example, the holding step S33 can be performed for 33 seconds or 40 seconds to indicate a low particle level. Furthermore, in the holding step S33 of the present invention, the pressure in the internal space 518 can be maintained at any pressure between 120 bar and 150 bar. For example, in the holding step S33, the pressure in the internal space 518 can be maintained at approximately 150 bar. In the above embodiments, the flow measurement component 532 is installed at the main supply line 533a, and the pressure measurement component 532 is installed between the fluid supply source 531 and the main supply valve 535a, but is not limited thereto. For example, such as Figure 13 As shown, the flow measurement component 532 can be installed in a first region A1 between the main supply valve 535a and the flow measurement component 537. Conversely, the flow measurement component 532 can be installed in a second region A2, which is between the point where the main supply line 533a branches off and the first supply valve 535b. Alternatively, the flow measurement component 532 can be installed at the main discharge line 511 and upstream of the branch point of the main discharge line 551. The flow measurement component 532 can be installed at at least one of the first region A2, the second region A2, and the third region A3, and if desired, can be installed at two or more of the first region A2, the second region A2, and the third region A3. For example, the flow measurement component 532 can be installed at the supply line 533, and the flow measurement component 532 can be installed at the main discharge line 551. When the flow measurement components 532 are installed at the supply line 533 and the main discharge line 551, the controller 30 can receive the measured flow values ​​from each flow measurement component 532 and can check whether the dry fluid G is leaking from the internal space 518 by the difference between the measured flow values.

[0136] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned from the specification and drawings.

[0137] Although preferred embodiments of the inventive concept have been illustrated and described to date, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber, which provides internal space; A fluid supply unit configured to supply processing fluid to the internal space; as well as A fluid discharge unit, configured to discharge the processed fluid from the internal space, and The fluid discharge unit includes: A discharge line, the discharge line being connected to the chamber; and A pressure regulating component, installed at the discharge line and configured to maintain the pressure in the internal space at a set pressure, and The fluid supply unit includes: Fluid supply source; and A supply line is provided between the fluid supply source and the chamber, and A flow measurement component is installed at either the supply line or the discharge line. This flow measurement component is configured to measure the flow rate of the processed fluid flowing within the internal space per unit time. The substrate processing apparatus further includes a controller configured to control the fluid supply unit and the fluid discharge unit, and The controller is configured to control the fluid supply unit and the fluid discharge unit to perform a pressurization step and a flow step. The pressurization step is used to increase the pressure of the internal space to the set pressure by supplying the processing fluid to the internal space. The flow step is used to discharge the processing fluid from the internal space through the fluid discharge unit while the processing fluid is being supplied to the internal space, thereby creating a flow of the processing fluid in the internal space. The control unit is configured to control the fluid supply unit and the fluid discharge unit to maintain the pressure in the internal space at a constant level equal to the set pressure during the flow step. The control unit is configured to control the fluid supply unit and the fluid discharge unit to maintain the flow rate of the processing fluid flowing within the internal space at a constant rate per unit time, which is the set flow rate in the flow step. The controller receives measured flow values ​​from the flow measurement component and checks whether the processed fluid is leaking from the internal space by the difference between the measured flow values. The set pressure is higher than the critical pressure to maintain the processed fluid in a supercritical state within the internal space.

2. The substrate processing apparatus according to claim 1, wherein, The controller is configured to control the fluid supply unit and the fluid discharge unit such that the difference between the flow rate per unit time of the processed fluid discharged into the internal space and the flow rate per unit time of the processed fluid supplied to the internal space in the flow step is 0 or the difference is within a critical value range.

3. The substrate processing apparatus according to claim 1, wherein, The fluid supply unit also includes a flow regulating valve, which is installed at the supply line, and The controller is configured to adjust the opening / closing speed of the flow regulating valve based on the measured flow rate measured by the flow measuring component.

4. The substrate processing apparatus according to claim 3, wherein, The controller is configured to adjust the opening / closing speed of the flow regulating valve so that the measured flow rate measured by the flow measuring component becomes the set flow rate in the flow step.

5. The substrate processing apparatus according to claim 1 or 2, wherein, Pressure measuring components are installed at the supply line and the discharge line, and The controller is configured to adjust the set value of the pressure regulating member based on the measured pressure measured by the pressure measuring member.

6. The substrate processing apparatus according to claim 5, wherein, The controller is configured to adjust the set value of the pressure regulating member so that the measured pressure measured by the pressure measuring member becomes the set pressure in the flow step.

7. The substrate processing apparatus according to claim 1 or 2, wherein, The processing fluid supplied by the fluid supply source is a fluid containing carbon dioxide (CO2).

8. A substrate processing apparatus for removing residual processing liquid on a substrate using a supercritical drying fluid, the substrate processing apparatus comprising: A chamber, which provides internal space; A fluid supply unit having a supply line configured to supply dry fluid to the interior space; A fluid discharge unit having a discharge line configured to discharge the dried fluid from the internal space; as well as A controller configured to control the fluid supply unit and the fluid discharge unit, and The flow measurement component is installed at at least one of the supply line or the discharge line, and is configured to measure the flow rate of the drying fluid flowing within the internal space per unit time. The controller is configured to control the fluid supply unit and the fluid discharge unit to perform a pressurization step, wherein the pressurization step is used to increase the pressure of the internal space to a set pressure by supplying the dried fluid to the internal space. A flow step is performed, which involves supplying the drying fluid to and discharging the drying fluid from the internal space while maintaining the pressure in the internal space at the set pressure. The controller is configured to control the fluid supply unit and the fluid discharge unit to maintain the flow rate of the drying fluid flowing within the internal space at a constant rate per unit time, which is the set flow rate during the flow step. The controller receives measured flow values ​​from the flow measurement component and checks whether the processed fluid is leaking from the internal space by the difference between the flow values. The set pressure is higher than the critical pressure to maintain the processed fluid in a supercritical state within the internal space.

9. The substrate processing apparatus according to claim 8, wherein, The controller is configured to control the fluid supply unit and the fluid discharge unit such that the difference between the flow rate per unit time of the drying process fluid discharged into the internal space and the flow rate per unit time of the drying fluid supplied to the internal space in the flow step is 0 or the difference is within a critical value range.

10. The substrate processing apparatus according to claim 8, wherein, The fluid supply unit also includes a flow regulating valve, which is installed at the supply line, and The controller is configured to adjust the opening / closing speed of the flow regulating valve based on the measured flow rate measured by the flow measuring component.

11. The substrate processing apparatus according to claim 10, wherein, The controller is configured to adjust the opening / closing speed of the flow regulating valve so that the measured flow rate measured by the flow measuring component becomes the set flow rate in the flow step.

12. The substrate processing apparatus according to claim 8, wherein, A pressure regulating component is installed at the discharge pipeline to maintain the pressure in the internal space at the set pressure.

13. The substrate processing apparatus according to claim 8 or 9, wherein, The flow measurement component includes: A first flow measurement component is installed at the supply line; and A second flow measurement component is installed at the discharge pipeline.

14. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber, which provides internal space; A transfer robot configured to transfer a substrate with remaining processing liquid into the internal space; A fluid supply unit configured to supply dry fluid to the interior space; as well as A fluid discharge unit, configured to discharge the dried fluid from the internal space, and The fluid supply unit includes: Fluid supply source; A supply line configured to supply the drying fluid from the fluid supply source to the interior space; and A flow regulating component, installed at the supply line, regulates the flow rate of the drying fluid supplied to the internal space per unit time to a set flow rate. The fluid discharge unit includes: A discharge line configured to discharge the dried fluid from the internal space, and A pressure regulating member, installed at the discharge line and configured to maintain the pressure in the internal space at a set pressure, and Wherein, in either the supply pipeline or the discharge pipeline A flow measurement component is installed, configured to measure the flow rate of the drying fluid flowing through the pipeline per unit time; and A pressure regulating component is installed, the pressure regulating component being configured to measure the pressure of the drying fluid flowing through the pipeline. The fluid supply unit and the fluid discharge unit further include a controller, and The controller is configured to control the fluid supply unit and the fluid discharge unit to perform a pressurization step, wherein the pressurization step is used to increase the pressure of the internal space to the set pressure by supplying the dried fluid to the internal space. A flow step is performed, wherein, while the drying fluid is supplied to the interior space, flow of the drying fluid is generated in the interior space by discharging the drying fluid from the interior space, such that the pressure in the interior space is constantly maintained at the set pressure in the flow step, and the flow rate of the drying fluid supplied to the interior space per unit time is constantly maintained at the set flow rate. The controller receives measured flow values ​​from the flow measurement component and checks whether the processed fluid is leaking from the internal space by the difference between the flow values. The set pressure is higher than the critical pressure to maintain the processed fluid in a supercritical state within the internal space.

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