A data storage method and device of a memory, a memory and a storage medium

Abstract

The application discloses a data storage method and device of a memory, a memory and a storage medium, and belongs to the technical field of memories. The memory comprises a first storage area and a second storage area, a first working temperature range of the first storage area is greater than a second working temperature range of the second storage area; a temperature value of the memory at a first time is acquired; in a case where it is determined that the memory triggers a preset transfer condition and the temperature value is not within the second working temperature range, writing data into the second storage area is prohibited; in a case where it is determined that the memory triggers the preset transfer condition and the temperature value is within the second working temperature range, the first storage area temporarily stores to-be-written data is transferred to the second storage area; and the risk of data damage caused by the temperature of the target memory when data is written into the target memory can be reduced.

Description

Technical Field

[0001] This application belongs to the field of memory technology, and specifically relates to a data storage method, apparatus and target memory of a memory. Background Technology

[0002] Quad-Level Cell (QLC) is a NAND flash memory technology. Compared to Trinity-Level Cell (TLC) technology (3 bits / cell), it can store more bits per cell, resulting in higher storage density and lower cost, making it increasingly widely used. However, because QLC cells contain more voltage states, the overall voltage distribution is higher, and the intervals between different voltage states are narrower. Temperature changes can cause these voltage states to drift and intertwine, leading to data corruption and inability to be read correctly. Therefore, QLC is more sensitive to temperature and has lower reliability than TLC. Currently, it is mainly used in Solid State Drives (SSDs) for cold data storage and has not yet been applied to mobile devices. If the temperature difference between the data being written to QLC and the temperature when it is being read exceeds a certain threshold, there is a risk of data corruption.

[0003] In prior art, there are requirements for the temperature difference between reading and writing in QLC. For example, data is written to QLC at high temperature and read from QLC at low temperature. The temperature difference between reading and writing must also be within the temperature threshold.

[0004] During their research, the inventors discovered that due to the current temperature difference between reading and writing, QLC can only be used in devices operating under specific temperature conditions. In devices that may experience large temperature differences, there is a risk of data loss when writing data to QLC. Summary of the Invention

[0005] The purpose of this application is to provide a data storage method, apparatus, and target memory for a target memory, which can reduce the risk of data corruption caused by the temperature of the target memory when writing data to the target memory.

[0006] In a first aspect, embodiments of this application provide a data storage method for a memory, the memory including a first storage area and a second storage area, the first storage area operating between a first temperature value and a second temperature value; the second storage area operating between a third temperature value and a fourth temperature value greater than or equal to the third temperature value; the first temperature value being less than the second temperature value, and the fourth temperature value being greater than or equal to the third temperature value; the first temperature value being less than or equal to the third temperature value; and the second temperature value being greater than or equal to the fourth temperature value; the method includes:

[0007] Obtain the temperature value of the memory at the first moment;

[0008] If the memory triggers a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value, writing data to the second memory area is prohibited.

[0009] When the memory triggers a preset transfer condition and the temperature value is between the third temperature value and the fourth temperature value, the data temporarily stored in the first memory area is transferred to the second memory area.

[0010] Secondly, embodiments of this application provide a data storage device for a memory, the memory including a first storage area and a second storage area, the first storage area operating between a first temperature value and a second temperature value; the second storage area operating between a third temperature value and a fourth temperature value greater than or equal to the third temperature value; the first temperature value being less than or equal to the third temperature value; and the second temperature value being greater than or equal to the fourth temperature value, including:

[0011] Temperature value acquisition module, used to acquire the temperature value of the memory at the first moment;

[0012] A write-prohibition module is used to prohibit writing data to the second storage area when it is determined that the memory triggers a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value.

[0013] A write-enabled module is configured to transfer temporarily stored data to be written in the first storage area to the second storage area when it is determined that the memory triggers a preset transfer condition and the temperature value is between the third and fourth temperature values.

[0014] Thirdly, embodiments of this application provide a memory, which includes a controller, a first storage area, a second storage area, and a temperature sensor;

[0015] The controller is configured to acquire the temperature value of the memory detected by the temperature sensor at a first moment; when it is determined that the memory has triggered a preset transfer condition and the temperature value is not between the third and fourth temperature values, it prohibits writing data to the second storage area; and when it is determined that the memory has triggered a preset transfer condition and the temperature value is between the third and fourth temperature values, it transfers the data temporarily stored in the first storage area to the second storage area.

[0016] Fourthly, embodiments of this application provide a readable storage medium on which a program or instructions are stored, which, when executed by a processor, implement the method described in the first aspect.

[0017] Fifthly, embodiments of this application provide an electronic device including a memory as described in the third aspect.

[0018] In this embodiment, when the memory triggers a preset transfer condition and the temperature value is not between the third and fourth temperature values, writing data to the second storage area is prohibited; when the memory triggers the preset transfer condition and the temperature value is between the third and fourth temperature values, the data temporarily stored in the first storage area is transferred to the second storage area. That is, the data temporarily stored in the first storage area is transferred to the second storage area only when the memory temperature value is between the third and fourth temperature values. Since the memory temperature value is between the third and fourth temperature values, the temperature of the second storage area is also between the third and fourth temperature values. When the temperature value is between the third and fourth temperature values, the risk of data corruption in the second storage area is reduced. Therefore, storing data in the second storage area between the third and fourth temperature values ​​can reduce the risk of data corruption caused by the temperature of the second storage area when writing data to it, thereby enabling the memory to operate over a wider temperature range and expanding the application scenarios of the memory. Furthermore, since the written data is guaranteed to be correct, the process of reading data from the second storage area can reduce the requirements for operating temperature, relax the temperature range restrictions for reading data, and even eliminate the temperature range restrictions for reading data, thereby further breaking through the temperature limitations of the aforementioned memory and expanding the application scenarios of the memory. Attached Figure Description

[0019] Figure 1 This is a schematic diagram showing the distribution of voltage status bits in the TLC and QLC operating states in some embodiments;

[0020] Figure 2 This is a schematic diagram of the composition structure of a QLC operating system in some embodiments;

[0021] Figure 3 A schematic diagram illustrating the implementation flow of a data storage method for a memory provided in an embodiment of this application;

[0022] Figure 4 A schematic diagram illustrating the implementation flow of another data storage method for a memory provided in an embodiment of this application;

[0023] Figure 5 A schematic diagram illustrating the implementation flow of a data storage method for a memory provided in this application embodiment;

[0024] Figure 6 A schematic diagram of the composition structure of a QLC operating system provided in an embodiment of this application;

[0025] Figure 7 A schematic diagram illustrating the temperature judgment process of a controller provided in an embodiment of this application;

[0026] Figure 8 A schematic diagram of a temperature judgment process for another controller provided in an embodiment of this application; Figure 9 This is a schematic diagram of the composition structure of a data storage device of a memory provided in an embodiment of this application;

[0027] Figure 10 A schematic diagram of the composition structure of a memory provided in an embodiment of this application;

[0028] Figure 11 A schematic diagram of the hardware structure of an electronic device to implement an embodiment of this application. Detailed Implementation

[0029] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0030] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, the first object can be one or at least two. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0031] The image processing method provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0032] Figure 1 This is a schematic diagram showing the distribution of voltage status bits in the TLC and QLC operating states in some embodiments, such as... Figure 1 As shown, waveform 101 represents the distribution of voltage status bits under TLC operation; waveform 102 represents the distribution of voltage status bits under QLC operation. It can be seen that the interval between two adjacent voltage status bits in waveform 101 is ΔV1; the interval between two adjacent voltage status bits in waveform 102 is ΔV2; obviously, ΔV1 is greater than ΔV2.

[0033] In related technologies, during normal read and write operations on QLC memory, the data to be written passes through a Single-Level Cell (SLC) or TLC. After the write operation is completed, the data to be written is moved into the QLC when the QLC memory is idle or when the host initiates garbage collection. Here, the host refers to the processor of the electronic device where the memory is located.

[0034] Furthermore, because QLC is quite sensitive to temperature, related technologies require that the temperature difference between reading and writing (i.e., the temperature difference between writing and reading, such as high temperature writing and low temperature reading, or low temperature writing and high temperature reading) of QLC-made memory (QLCNAND memory) cannot exceed a temperature threshold T℃ (e.g., T = 70). This imposes many limitations on the use of QLC NAND memory, while TLC NAND memory does not have this problem.

[0035] Furthermore, the temperature difference requirement for reading and writing QLCNAND (QLC flash memory) means that current QLCNAND memory can only be used in devices with specific temperature environments. When applied to products such as mobile devices or automated devices, it may experience large temperature differences, which may lead to data loss. Therefore, this defect will affect the application of QLCNAND memory in mobile devices or automated devices.

[0036] To improve the performance of QLC NAND memory and avoid direct operation on QLC NAND memory, QLC NAND memory contains at least one of Single-Level Cell (SLC) and TLC. Among them, SLC has a buffer of 1 bit / cell / TLC (3 bits / cell). SLC / TLC has a wide operating temperature range. In practical applications, SLC / TLC does not have temperature difference requirements for data read and write operations.

[0037] Figure 2 This is a schematic diagram of the composition structure of a QLC operating system in some embodiments, such as... Figure 2 As shown, the Host processor 201 is an external processor used in conjunction with the QLC 214, and the data to be written to the QLC 214 can be written by the Host memory 201; Universal Flash Storage (UFS) 21 is a mainstream storage product currently used in mobile terminals; UFS 21 includes a controller 211, SLC 212, TLC 213, and QLC 214;

[0038] The controller 211 includes a static random-access memory (SRAM) buffer 2110. The SRAM buffer 2110 is a cache area contained in the controller 211 of the UFS 21. It has extremely high read and write speeds and erase and write lifespan. All read and write data will first enter the SRAM buffer 2110.

[0039] Understandably, the Host processor 201 can send the Normal W instruction for normal data writing or the Turbo W instruction for fast data writing to the UFS 21.

[0040] Here, Turbo W is a fast write function included in the controller 211 of UFS 21. When this function is enabled, all written data is first stored in the SLC 212 area, and then moved to the QLC 214 as needed. Because the read and write performance of SLC 212 is much higher than that of QLC 214, the performance of memory containing QLC 214 will be greatly improved by transferring data through SLC 212.

[0041] Normal W means that data is written normally, bypassing the SLC 212 area and directly to the TLC 213 area. In this case, the performance will be much lower than when writing directly to the SLC 212 area.

[0042] In this embodiment of the application, during normal read and write operations, the data will pass through SLC 212 or TLC 213. After the write is completed, the data will be moved into QLC 214 when the memory is idle or when the Host processor 201 initiates garbage collection.

[0043] Data writing process: Host processor 201 → SRAM cache 2110 → SLC 212 or TLC 213 → QLC 214;

[0044] Data reading process: QLC 214 → SRAM cache 2110 → Host processor 201.

[0045] If the temperature difference between a piece of data when it is loaded into the QLC 214 and the temperature when it is read exceeds Delta T℃, there is a risk of data errors.

[0046] Figure 2 In this context, TW (Turbo W) migration indicates that data is moved from the SLC 212 area to the QLC 214 area. This process occurs when memory is idle or when the host processor 201 initiates garbage collection.

[0047] TLC->QLC migration means moving data from the TLC 213 area to the QLC 214 area. This occurs when memory is idle or when garbage collection is initiated by the host processor 201.

[0048] Based on the aforementioned technical problems, the inventors discovered during their research that SLC and TLC inherently possess data caches capable of storing data, allowing control over the timing of writing data to be written from the SLC and / or TLC to the QLC. Therefore, this application provides a data storage method for a memory, the memory comprising a first storage area and a second storage area. The first storage area operates between a first temperature value and a second temperature value; the second storage area operates between a third temperature value and a fourth temperature value greater than or equal to the third temperature value; the first temperature value is less than the second temperature value, and the fourth temperature value is greater than or equal to the third temperature value; the first temperature value is less than or equal to the third temperature value; the second temperature value is greater than or equal to the fourth temperature value.

[0049] It is understandable that the temperature range between the first and second temperature values ​​is the first temperature range; and the temperature range between the third and fourth temperature values ​​is the second temperature range.

[0050] like Figure 3 As shown, the method includes the following steps:

[0051] Step S301: Obtain the temperature value of the memory at the first moment;

[0052] Here, this method can be applied to a controller in memory, which can receive data write or read instructions from an external processor and control data writing or reading from the target memory in response to these instructions. The external processor can be a host processor; the write instruction can be TurboW or NormalW.

[0053] In some possible implementations, the memory may refer to a memory containing a QLC;

[0054] In one possible implementation, the first storage area is an SLC or TLC; the second storage area is a QLC. It is understood that a temperature sensor can be installed in the memory to reflect the memory's temperature.

[0055] In one embodiment, obtaining the temperature value of the memory at a first moment can be achieved by a temperature sensor in the memory monitoring the memory temperature in real time and outputting the first-moment temperature value to the controller, which then receives the first-moment temperature value in real time. It can be understood that the first moment is the moment when the electronic device obtains the temperature value through the temperature sensor, or the moment when the electronic device obtains the temperature value through the temperature sensor plus a preset interval. This preset interval can be set according to requirements, such as 1 second, and this embodiment does not limit it.

[0056] Step S302: If it is determined that the memory triggers a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value, then writing data to the second memory area is prohibited.

[0057] It is understandable that the second temperature range corresponding to the third and fourth temperature values ​​can be the operating temperature range of the second storage area where the risk of data loss is below a threshold. This range can be determined based on the actual operating temperature range of the second storage area contained in the memory. Different temperature ranges can be determined for different storage areas contained in the memory. The second storage area can be a QLC (Quick Memory Cell), or it can be other temperature-sensitive memories.

[0058] In some implementations, determining that the memory triggers a preset transfer condition may include: receiving a first preset instruction; and / or confirming that the memory is in an idle state.

[0059] Here, the first preset instruction can be a data loading instruction or a garbage collection instruction issued by an external processor. For example, the first instruction can be a TW (Turbo W) Migration instruction or a TLC->QLC Migration instruction.

[0060] Here, the memory operates in different modes for different first instructions. For example, for the first instruction TurboW, the memory operates in fast write mode. In one possible implementation, if the memory triggers a preset transfer condition and the temperature value is not between the third and fourth temperature values, writing data to the second memory area is prohibited. In this case, the data to be written can be stored in SLC or TLC.

[0061] The memory triggering the preset transfer condition may be that the memory controller receives a first preset instruction and / or determines that the memory is in an idle state.

[0062] Step S303: When it is determined that the memory triggers a preset transfer condition and the temperature value is between the third temperature value and the fourth temperature value, the data temporarily stored in the first memory area is transferred to the second memory area.

[0063] In some possible implementations, after obtaining the temperature value of the memory, the following two situations exist:

[0064] Scenario 1: Determine the write permission of the second storage area based on the temperature value of the memory and the second operating temperature range (between the third and fourth temperature values); if the memory triggers a preset transfer condition and the write permission is prohibited, prohibit writing data to the second storage area; if the write permission is allowed, transfer the temporarily stored data to be written in the first storage area to the second sub-storage area.

[0065] Here, the implementation method for determining the write permission of the second storage area based on the temperature value of the memory and the second operating temperature range can be as follows: when the temperature value is within the second operating temperature range, the write permission is determined to be allowed; when the temperature value is outside the second operating temperature range, the write permission is determined to be prohibited.

[0066] Scenario 2: If the memory triggers a preset transfer condition, obtain the temperature value of the memory at the first moment;

[0067] If the temperature value is not within the second operating temperature range, writing data to the second storage area is prohibited;

[0068] When the temperature value is within the second operating temperature range, the data to be written in the first storage area is transferred to the second storage area for storage.

[0069] It can be seen that in both of the above cases, as long as the temperature value of the memory is not within the second operating temperature range, writing data to the second storage area is prohibited; when the temperature value of the memory is within the second operating temperature range and it is determined that the preset transfer condition is triggered, the data to be written in the first storage area is allowed to be transferred to the second storage area for storage.

[0070] In this embodiment, when the memory triggers a preset transfer condition and the temperature value is not between the third and fourth temperature values, writing data to the second storage area is prohibited; when the memory triggers the preset transfer condition and the temperature value is between the third and fourth temperature values, the data temporarily stored in the first storage area is transferred to the second storage area. That is, the data temporarily stored in the first storage area is transferred to the second storage area only when the memory temperature value is between the third and fourth temperature values. Since the memory temperature value is between the third and fourth temperature values, the temperature of the second storage area is also between the third and fourth temperature values. When the temperature value is between the third and fourth temperature values, the risk of data corruption in the second storage area is reduced. Therefore, storing data in the second storage area between the third and fourth temperature values ​​can reduce the risk of data corruption caused by the temperature of the second storage area when writing data to it, thereby enabling the memory to operate over a wider temperature range and expanding the application scenarios of the memory. Furthermore, since the written data is guaranteed to be correct, the process of reading data from the second storage area can reduce the requirements for operating temperature, relax the temperature range restrictions for reading data, and even eliminate the temperature range restrictions for reading data, thereby further breaking through the temperature limitations of the aforementioned memory and expanding the application scenarios of the memory.

[0071] Figure 4 This is a schematic diagram illustrating the implementation flow of another data storage method for a memory provided in an embodiment of this application. The memory includes a first storage area and a second storage area. The first storage area operates between a first temperature value and a second temperature value; the second storage area operates between a third temperature value and a fourth temperature value greater than or equal to the third temperature value; the first temperature value is less than or equal to the third temperature value; the second temperature value is greater than or equal to the fourth temperature value; as shown below. Figure 4 As shown, the method includes the following steps:

[0072] Step S401: Obtain the temperature value of the memory at the first moment;

[0073] Step S402: Obtain the correspondence between storage area type and operating temperature range, and the type of the second storage area;

[0074] It is understandable that different storage area types can correspond to different temperature difference DeltaT requirements and different read / write operable temperature requirements; therefore, the temperature range can be determined based on the operable temperature requirements and the temperature difference DeltaT requirements.

[0075] For example, at Delta T = 70℃, the read / write operable temperature requirement for QLC is Tc = -25 to 85℃, and the temperature range can be Ta to Tb; where Ta = 15℃ and Tb = 45℃.

[0076] In one possible implementation, a pre-established correspondence between storage area types and operating temperature ranges can be defined; the correspondence between storage area types and operating temperature ranges can be found in Table 1 below:

[0077] Table 1

[0078]

[0079] As shown in Table 1, type 1 memory can be QLC; type 2 or type 3 memory can be other high-density memory that is sensitive to temperature, other than QLC. There are no specific limitations on type 2 or type 3 here.

[0080] In one possible implementation, obtaining the correspondence between storage area type and operating temperature range can be achieved by obtaining a pre-established correspondence between storage area type and operating temperature range.

[0081] Step S403: Determine from the correspondence that the operating temperature range corresponding to the type of the second storage area is between the third temperature value and the fourth temperature value;

[0082] It is understandable that the type of the second storage area can be any one of type 1 to type 3 in Table 1. When the type of the second storage area is type 2, the temperature difference requirement is 65℃, and the read / write operable temperature requirement is -25℃ to 85℃, the target temperature range is 20℃ to 40℃. Correspondingly, the third temperature value is 20℃ and the fourth temperature value is 40℃.

[0083] It is understandable that step S401 can be executed after step S403, as long as the order of steps S402 and S403 remains unchanged, and S401, S402, and S403 are all executed before S404.

[0084] Step S404: If it is determined that the memory triggers a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value, then writing data to the second memory area is prohibited.

[0085] Step S405: Obtain the duration during which the temperature value is not between the third and fourth temperature values;

[0086] In some possible implementations, a timer can be used to start timing from the moment when the temperature value of the memory is determined to be outside the second operating temperature range, and end timing from the moment when the acquired temperature value of the memory is within the second operating temperature range, thereby obtaining the duration for which the temperature value is not between the third and fourth temperature values.

[0087] Step S406: If the duration is greater than or equal to a preset duration and the capacity percentage of the first storage area at the first moment is greater than or equal to a preset capacity percentage, a first prompt is issued; the first prompt is used to notify the user to change the ambient temperature of the storage.

[0088] Understandably, the preset duration can be determined based on the temperature requirements of the memory; for example, the preset duration could be 30 seconds or 1 minute. The preset energy percentage can be determined based on risk level requirements; for example, the preset energy percentage could be 80% or any percentage greater than or equal to 70%.

[0089] In this embodiment of the invention, the data to be written sent by the controller to the QLC is first temporarily stored in the QLC, and the data to be written sent by the controller to the TLC is first temporarily stored in the TLC. This embodiment of the invention can also determine the capacity percentage of the QLC and / or TLC at a first moment. If the capacity percentage at the first moment is greater than or equal to a preset capacity percentage, a first prompt is sent to the host. Based on the first prompt, the host processor notifies the display screen to show alarm information to remind the user to place the mobile device, including the target memory, in a suitable temperature environment as soon as possible. After the memory temperature drops to between a third and a fourth temperature value, the data to be written in the QLC and / or TLC is stored in the QLC.

[0090] Of course, it can also determine the occupied capacity of the QLC and / or TLC. If the occupied capacity is greater than or equal to a preset occupied capacity threshold, and the duration of the temperature value not being between the third and fourth temperature values ​​is greater than or equal to a preset duration, the aforementioned first prompt is issued. It can also determine the remaining capacity of the QLC and / or TLC. If the occupied capacity is less than or equal to a preset remaining capacity threshold, and the duration of the temperature value not being within the second operating temperature range is greater than or equal to a preset duration, the aforementioned first prompt is issued.

[0091] In practical applications, when the first storage area includes at least two storage areas, it can first be determined whether the capacity percentage of one of the first storage areas at a given moment is greater than or equal to a preset capacity percentage. If it is, the controller stores the subsequent data to be written in the first storage area whose capacity percentage at the given moment is greater than or equal to the preset capacity percentage into other first storage areas whose capacity percentage is less than the preset capacity percentage. Then, after the capacity percentage of all the first storage areas at the given moment is greater than or equal to the preset capacity percentage, and the duration for which the temperature value of the memory at the given moment is not within the second operating temperature range is greater than or equal to a preset duration, the aforementioned first prompt is issued.

[0092] In one possible implementation, the first prompt can be used to remind the user to place the mobile device, including the target memory, in a suitable temperature environment as soon as possible.

[0093] Step S407: When it is determined that the memory triggers a preset transfer condition and the temperature value is between the third temperature value and the fourth temperature value, the data temporarily stored in the first memory area is transferred to the second memory area.

[0094] In this embodiment, the correspondence between storage area type and operating temperature range and the type of the second storage area are obtained; the operating temperature range corresponding to the type of the second storage area is determined from the correspondence as the second operating temperature range between the third temperature value and the fourth temperature value. In this way, a corresponding second operating temperature range can be determined for different types of second storage areas, and the determined second operating temperature range is more consistent with the actual situation of the second storage area.

[0095] By obtaining the duration for which the temperature value is not between the third and fourth temperature values, and when the duration is greater than or equal to a preset duration and the capacity percentage of the first storage area at the first moment is greater than or equal to a preset capacity percentage, a first prompt is issued to notify the user to change the ambient temperature of the memory. In this way, the user can change the ambient temperature of the memory in real time according to the prompt information, thereby reducing the risk of data corruption caused by the temperature of the memory when writing data to the memory.

[0096] Figure 5This application provides a schematic diagram of the implementation flow of a data storage method for a memory. The memory includes a first storage area and a second storage area, operating between a first temperature value and a second temperature value; the second storage area operates between a third temperature value and a fourth temperature value greater than or equal to the third temperature value; the first temperature value is less than or equal to the third temperature value; the second temperature value is greater than or equal to the fourth temperature value; the first storage area includes a single-layer storage unit and / or a three-layer storage unit; the second storage area includes a four-layer storage unit; as shown below. Figure 5 As shown, the method includes the following steps:

[0097] Step S501: Upon receiving the second preset instruction, temporarily store the external data to be written into the single-layer storage unit;

[0098] It is understood that the second preset instruction can be an instruction corresponding to TurboW issued by an external processor of the memory. In some possible implementations, upon receiving the second preset instruction, the external data to be written is temporarily stored in the single-level storage unit, which can be achieved by responding to the instruction corresponding to TurboW and writing the data to be written contained in TurboW to the SLC.

[0099] Step S502: Upon receiving a third preset instruction, temporarily store the external data to be written to the three-layer storage unit;

[0100] It is understandable that the third preset instruction can be the instruction corresponding to NormalW issued by the external processor of the memory.

[0101] In some possible implementations, upon receiving a second preset instruction, external data to be written is temporarily stored in the single-layer storage unit. This can be achieved by responding to the instruction corresponding to NormalW and writing the data to be written contained in NormalW to the TLC.

[0102] Step S503: Obtain the temperature value of the memory at the first moment;

[0103] Step S504: If it is determined that the memory triggers a preset transfer condition and the temperature value is not within the range of the third and fourth temperature values, writing data to the second memory area is prohibited.

[0104] Step S505: Control the temperature adjustment device corresponding to the memory to adjust the temperature of the memory so that the temperature value of the memory is between the third temperature value and the fourth temperature value;

[0105] It is understandable that, when the temperature range between the third and fourth temperature values ​​corresponds to the second temperature range, and when the temperature value is not within the second operating temperature range, there are two possible scenarios:

[0106] In the first case, the temperature value of the memory is less than every operating temperature value within the second operating temperature range; that is, the temperature value of the memory is less than the second operating temperature range.

[0107] In the second case, the temperature value of the memory is greater than every operating temperature value within the second operating temperature range, that is, the temperature value of the memory is greater than the second operating temperature range.

[0108] In some possible implementations, if the temperature of the memory is lower than the second operating temperature range, the temperature of the memory can be increased by a memory temperature adjustment device to bring the temperature of the memory up to the second operating temperature range.

[0109] In one embodiment, the temperature adjustment device for the memory may include a heating device, for example, the temperature adjustment device for the memory may include a heating resistor; the temperature of the memory is increased by controlling the operating time and stopping time of the heating resistor.

[0110] In some other possible implementations, if the temperature of the memory is greater than the second operating temperature range, the temperature of the memory can be reduced by a memory temperature adjustment device, so that the temperature of the memory is reduced to the second operating temperature range.

[0111] In one embodiment, the temperature regulation device for the memory may include a cooling device or a heat dissipation device, for example, a fan; the temperature of the memory is reduced by controlling the operating time and speed of the fan.

[0112] Step S506: When it is determined that the memory triggers a preset transfer condition and the temperature value is between the third temperature value and the fourth temperature value, the data temporarily stored in the first memory area is transferred to the second memory area.

[0113] In this embodiment of the application, when a second preset instruction is received, the external data to be written is temporarily stored in the single-layer storage unit; when a third preset instruction is received, the external data to be written is temporarily stored in the three-layer storage unit, so that when the memory triggers a preset transfer condition or when it is determined that the memory triggers a preset transfer condition, the data to be written can be moved from the first storage area to the second storage area.

[0114] By controlling the temperature adjustment device corresponding to the memory when the temperature value is not within the second operating temperature range, the temperature of the memory is adjusted so that the temperature value of the memory is between the third temperature value and the fourth temperature value (the second operating temperature range), thereby reducing the risk of data corruption caused by the temperature of the memory when writing data to the memory.

[0115] In some embodiments, the operating temperature of the QLC at the first moment can be dynamically monitored, and a suitable QLC temperature write control mechanism can be set. When the operating temperature of the QLC at the first moment is not suitable, the data is temporarily stored in the SLC / TLC cache and not directly stored in the QLC. When the ambient temperature changes to a suitable temperature and the operating temperature of the QLC at the first moment is suitable, the data is then written into the QLC.

[0116] If the SLC / TLC space is almost full and the ambient temperature has not yet reached a suitable range, the user will be prompted to temporarily place the device in a suitable temperature environment.

[0117] In real-world usage scenarios of mobile devices, including QLC, such as mobile phones, it is impossible for them to be in a certain temperature environment all the time. For example, in a cold night, when the phone is put into the user's pocket from the outside or enters a room with a suitable temperature, or when it is being charged indoors, the relevant data can be transferred into QLC by taking advantage of the change in ambient temperature.

[0118] Figure 6 This is a schematic diagram of the composition structure of a QLC operating system provided in an embodiment of this application, as shown below. Figure 6 As shown, the Host processor 601, UFS 61, controller 611, SLC 612, TLC 613, QLC 614, and SRAM cache 6110 correspond to respectively Figure 2 The Host processor 201, UFS 21, controller 211, SLC 212, TLC 213, QLC 214, and SRAM cache 2110 are included. Figure 2 In comparison, the QLC operating system also includes a temperature sensor 62.

[0119] Here, temperature sensor 62 is used to sense the temperature value of QLC 214; before data is transferred from SLC 612 or TLC 613 into QLC 614, the controller can read the temperature value data from temperature sensor 62, and then proceed as follows. Figure 7 Temperature judgment is performed, and the transmission links from TLC to QLC and from SLC to QLC are controlled based on the temperature judgment results, instead of continuously following... Figure 2The illustrated scheme performs a data transfer operation when the memory is idle or when the Host processor 201 initiates garbage collection, moving data from the SLC 212 or TLC 213 into the QLC 214. The temperature sensor can be positioned close to the QLC 614 for more accurate temperature measurement.

[0120] When data is written to SLC 612 or TLC 613, it is not transferred to QLC 614 for the time being. At this time, the data of the internal temperature sensor of the device (corresponding memory) can be read, and the temperature can be used to determine whether to transfer the data to QLC 614.

[0121] To more clearly describe the judgment process, after step 301, the controller's temperature judgment steps include:

[0122] Step S701: Obtain the current temperature value from the temperature sensor to get T;

[0123] Here, step S701 can be that the controller inside the device monitors the temperature of the QLC through a temperature sensor to obtain the temperature value T at the first moment.

[0124] Step S702: Determine whether T is between Ta and Tb. If yes, proceed to step S703; otherwise, proceed to step S704.

[0125] It is understandable that the values ​​of Ta to Tb correspond to the QLC temperature difference requirement Delta T.

[0126] Step S703: Allow data transfer; proceed to step 303.

[0127] Understandably, data migration is allowed when T is between Ta and Tb. If data migration is allowed and the memory is idle or the host processor initiates garbage collection, the data will be moved into the QLC.

[0128] Step S704: Prohibit data movement; proceed to step 302.

[0129] Here, data movement is prohibited when T is not between Ta and Tb. Even when memory is idle or the host processor initiates garbage collection, data is not allowed to be moved into the QLC temporarily, but is temporarily stored in the TLC and / or SLC.

[0130] Understandably, if the ambient temperature of the mobile device, including the QLC, changes to a suitable temperature (between Ta and Tb), the data transfer to the QLC will be initiated.

[0131] In some other possible implementations, after step 702, the following may also be included:

[0132] If the capacity percentage of the first storage area at a first moment is greater than or equal to the preset capacity percentage, a first prompt is issued; the first prompt is used to notify the user to change the ambient temperature of the storage.

[0133] Using the examples of Ta and Tb above, when the TLC capacity is about to be used up (a capacity percentage trigger value can be set, such as 80% for TLC capacity), the user is reminded to place the mobile device, including the QLC, in a suitable temperature environment as soon as possible; specifically, this judgment process can be found in [link to relevant documentation]. Figure 8 ;like Figure 8 As shown, the judgment process includes the following steps:

[0134] Step S801: Obtain the current temperature value from the temperature sensor to get T;

[0135] Step S802: Determine if T is between Ta and Tb; if not, proceed to step S803; if so, proceed according to the normal storage path, that is, when the memory is idle or a garbage collection instruction is received, move the data in TCL and / or SLC to QLC. TCL and / or SLC then delete the data that has been moved from their own storage.

[0136] Step S803: The cache in the first storage area has met the preset conditions;

[0137] Here, the cache already meets the preset conditions, which can be that the capacity ratio of SLC or TLC is greater than or equal to the preset ratio, such as the preset ratio of 80%.

[0138] Step S804: Issue the first prompt.

[0139] In one implementation, an initial prompt may be issued to remind the user to place the mobile device, including the QLC, in a suitable temperature environment as soon as possible. This prompt may be delivered via a ringing sound, voice, or vibration.

[0140] Understandably, after reminding users to place the mobile device, including the QLC, in a suitable temperature environment as soon as possible, the user will initiate the data transfer to the QLC once the mobile device, including the QLC, is placed in a suitable temperature environment and the QLC temperature is appropriate.

[0141] In this embodiment, with Delta T = 70°C, the read / write operable temperature requirement for the QLC memory is Tc = -25°C to 85°C, corresponding to Ta = 15°C and Tb = 45°C. Therefore, write operations within this temperature range (Ta to Tb) can be performed according to the normal procedure, because as long as the temperature during reading is within the -25°C to 85°C range, the written data will not exceed the Delta T = 70°C requirement. Write temperatures exceeding this range are temporarily not transferred to the QLC; the QLC temperature is dynamically monitored, and writing to the QLC only occurs when conditions are suitable.

[0142] Different QLC memory suppliers have different requirements for DeltaT. Based on the specific value of DeltaT, reasonable Ta and Tb judgment values ​​can be set.

[0143] In this embodiment of the application, by introducing appropriate algorithms and judgment mechanisms, without adding other hardware protection devices or compromising lifespan and reliability, the read and write operations of memory including QLC are no longer limited by the previous temperature difference requirements, effectively increasing the application range of memory including QLC and improving its data protection capabilities.

[0144] Based on the foregoing embodiments, this application provides a data storage device for a memory, which includes various units and modules included in each unit, and can be implemented by a controller in the memory; of course, it can also be implemented by specific logic circuits; in the implementation process, the controller in the memory can be a central processing unit (CPU), a microprocessor unit (MPU), a digital signal processor (DSP), or a field programmable gate array (FPGA), etc.

[0145] This application uses the memory data storage device executing the memory data storage method as an example to illustrate the memory data storage device provided in this application embodiment.

[0146] Figure 9 This is a schematic diagram of the composition structure of a data storage device for a memory according to an embodiment of this application. The memory includes a first storage area and a second storage area. The first storage area operates between a first temperature value and a second temperature value; the second storage area operates between a third temperature value and a fourth temperature value greater than or equal to the third temperature value; the first temperature value is less than or equal to the third temperature value; the second temperature value is greater than or equal to the fourth temperature value; for example... Figure 9 As shown, the data storage device 900 of the memory includes:

[0147] Temperature value acquisition module 901 is used to acquire the temperature value of the memory at a first moment;

[0148] Write-prohibition module 902 is used to prohibit writing data to the second storage area when it is determined that the memory has triggered a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value.

[0149] The write-allowed module 903 is used to transfer temporarily stored data to be written in the first storage area to the second storage area when it is determined that the memory triggers a preset transfer condition and the temperature value is between the third and fourth temperature values.

[0150] In some embodiments, the data storage device 900 of the memory further includes:

[0151] The duration acquisition module is used to acquire the duration during which the temperature value is not between the third temperature value and the fourth temperature value;

[0152] The prompting module is used to issue a first prompt when the duration is greater than or equal to a preset duration and the capacity percentage of the first storage area at the first moment is greater than or equal to a preset capacity percentage; the first prompt is used to notify the user to change the ambient temperature of the storage.

[0153] In some embodiments, the data storage device 900 of the memory further includes: a second operating temperature range determination module, used to obtain the correspondence between the storage area type and the operating temperature range, and the type of the second storage area; and to determine from the correspondence that the operating temperature range corresponding to the type of the second storage area is between a third temperature value and a fourth temperature value.

[0154] In some embodiments, the data storage device 900 of the memory further includes: a memory temperature adjustment module, used to control a temperature adjustment device corresponding to the memory to adjust the temperature of the memory so that the temperature value of the memory is between the third temperature value and the fourth temperature value when the temperature value is not between the third temperature value and the fourth temperature value.

[0155] In some embodiments, the first storage area includes a single-layer storage unit and / or a three-layer storage unit; the second storage area includes a four-layer storage unit; the data storage device 900 of the memory further includes: a temporary storage module, used to temporarily store external data to be written to the single-layer storage unit when a second preset instruction is received; and to temporarily store external data to be written to the three-layer storage unit when a third preset instruction is received.

[0156] The data storage device 900 of the memory provided in this application embodiment can realize Figures 3 to 5 The various processes implemented in the method implementation examples will not be described again here to avoid repetition.

[0157] In this embodiment, when the memory triggers a preset transfer condition and the temperature value is not between the third and fourth temperature values, writing data to the second storage area is prohibited; when the memory triggers the preset transfer condition and the temperature value is between the third and fourth temperature values, the data temporarily stored in the first storage area is transferred to the second storage area. That is, the data temporarily stored in the first storage area is transferred to the second storage area only when the memory temperature value is between the third and fourth temperature values. Since the memory temperature value is between the third and fourth temperature values, the temperature of the second storage area is also between the third and fourth temperature values. When the temperature value is between the third and fourth temperature values, the risk of data corruption in the second storage area is reduced. Therefore, storing data in the second storage area between the third and fourth temperature values ​​can reduce the risk of data corruption caused by the temperature of the second storage area when writing data to it, thereby enabling the memory to operate over a wider temperature range and expanding the application scenarios of the memory. Furthermore, since the written data is guaranteed to be correct, the process of reading data from the second storage area can reduce the requirements for operating temperature, relax the temperature range restrictions for reading data, and even eliminate the temperature range restrictions for reading data, thereby further breaking through the temperature limitations of the aforementioned memory and expanding the application scenarios of the memory.

[0158] Furthermore, in this embodiment, the functional modules can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional module.

[0159] If the integrated unit is implemented as a software functional module and not sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this embodiment, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute all or part of the steps of the method described in this embodiment. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0160] Generally speaking, the computer program instructions corresponding to the data storage method of a memory in this embodiment can be stored on storage media such as optical discs, hard disks, and USB flash drives. When the computer program instructions corresponding to the data storage method of a memory in the storage medium are read or executed by an electronic device, any of the data storage methods of the memory in the foregoing embodiments are implemented.

[0161] Figure 10 This is a schematic diagram of the composition structure of a memory provided in an embodiment of this application, as shown below. Figure 10 As shown, the memory 100 includes: a controller 1001, a first storage area 1002, a second storage area 1003, and a temperature sensor 1004;

[0162] The controller 1001 is used to acquire the temperature value of the memory 100 at a first moment detected by the temperature sensor 1003; when it is determined that the memory 100 triggers a preset transfer condition and the temperature value is not between the third and fourth temperature values, it prohibits writing data to the second storage area 1003; and when the storage parameters of the memory 100 reach the storage transfer trigger condition and the temperature value is between the third and fourth temperature values, it transfers the data temporarily stored in the first storage area 1002 to the second storage area 1003.

[0163] In some embodiments, the memory 100 further includes a temperature adjustment device 1005;

[0164] Temperature adjustment device 1005 is used to adjust the temperature of memory 100 in response to a temperature control signal, so that the temperature value of memory 100 is between the third temperature value and the fourth temperature value;

[0165] Correspondingly, the controller 1001 is used to generate the temperature control signal based on the relationship between the temperature value and the second operating temperature range (between the third temperature value and the fourth temperature value) when the temperature value is not within the second operating temperature range.

[0166] The data storage device of the memory in this application embodiment can be an electronic device or a component of an electronic device, such as an integrated circuit or a chip. The electronic device can be a terminal or other devices besides a terminal. For example, the electronic device can be a mobile phone, tablet computer, laptop computer, handheld computer, in-vehicle electronic device, mobile internet device (MID), augmented reality (AR) / virtual reality (VR) device, robot, wearable device, ultra-mobile personal computer (UMPC), netbook or personal digital assistant (PDA), etc. It can also be a server, network attached storage (NAS), personal computer (PC), television (TV), ATM or self-service machine, etc. The embodiments of this application do not specifically limit it.

[0167] The data storage device of the memory in this application embodiment can be a device with an operating system. This operating system can be Android, iOS, or other possible operating systems; this application embodiment does not specifically limit the specific operating system used.

[0168] Based on the same technical concept as the foregoing embodiments, this application provides an electronic device, which includes a memory and a processor; wherein, the memory corresponds to... Figure 10 The memory 100 is used to store computer programs and data; the processor is used to execute the computer programs stored in the memory to implement any of the memory data storage methods in the foregoing embodiments.

[0169] In practical applications, the aforementioned memory can provide instructions and data to the processor. The aforementioned processor can be at least one of the following: Application Specific Integrated Circuit (ASIC), DSP, Programmable Logic Device (PLD), FPGA, CPU, controller, microcontroller, and microprocessor.

[0170] Figure 11 A schematic diagram of the hardware structure of an electronic device to implement an embodiment of this application.

[0171] The electronic device 110 includes, but is not limited to, components such as: radio frequency unit 1101, network module 1102, audio output unit 1103, input unit 1104, sensor 1105, display unit 1106, user input unit 1107, interface unit 1108, memory 1109, and processor 1110.

[0172] Those skilled in the art will understand that the electronic device 110 may also include a power supply (such as a battery) for supplying power to various components. The power supply may be logically connected to the processor 1110 through a power management system, thereby enabling functions such as managing charging, discharging, and power consumption through the power management system. Figure 11 The electronic device structure shown does not constitute a limitation on the electronic device. The electronic device may include more or fewer components than shown, or combine certain components, or have different component arrangements, which will not be elaborated here.

[0173] The memory 1109 includes a controller 1001, a first storage area 1002, a second storage area 1003, and a temperature sensor 1004.

[0174] The controller 1001 is configured to acquire the temperature value of the memory at a first moment; when it is determined that the memory has triggered a preset transfer condition and the temperature value is not between the third and fourth temperature values, it prohibits writing data to the second storage area; when it is determined that the memory has triggered a preset transfer condition and the temperature value is between the third and fourth temperature values, it transfers the data temporarily stored in the first storage area to the second storage area.

[0175] In summary, the data storage method for a memory provided in this application includes: obtaining the temperature value of the memory at a first moment; prohibiting the writing of data to the second storage area when it is determined that the memory triggers a preset transfer condition and the temperature value is not between a third temperature value and a fourth temperature value; and transferring the temporarily stored data to be written in the first storage area to the second storage area when it is determined that the memory triggers the preset transfer condition and the temperature value is between a third temperature value and a fourth temperature value.

[0176] This application can transfer the temporarily stored data to be written in the first storage area to the second storage area only when the temperature value of the memory is between the third and fourth temperature values ​​at the first moment. Therefore, it can reduce the risk of data corruption caused by the temperature of the second storage area when writing data to the second storage area.

[0177] It should be understood that, in this embodiment, the input unit 1104 may include a graphics processing unit (GPU) 1104' and a microphone 1104'. The GPU 1104' processes image data of still images or videos obtained by an image capture device (such as a camera) in video capture mode or image capture mode. The display unit 1106 may include a display panel 1106', which may be configured in the form of a liquid crystal display, an organic light-emitting diode, etc. The user input unit 1107 includes a touch panel 1107' and at least one of other input devices 1107'. The touch panel 1107' is also called a touch screen. The touch panel 1107' may include two parts: a touch detection device and a touch controller. Other input devices 1107' may include, but are not limited to, a physical keyboard, function keys (such as volume control buttons, power buttons, etc.), a trackball, a mouse, and a joystick, which will not be described in detail here.

[0178] The memory 1109 can be used to store software programs and various data. The memory 1109 may primarily include a first storage area operating within a first operating temperature range and a second storage area operating within a second operating temperature range. The first storage area includes SLC and TLC; the second storage area includes QLC, etc. Furthermore, the memory 1109 may include volatile memory or non-volatile memory, or both. The non-volatile memory may be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. Volatile memory can be random access memory (RAM), static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), and direct memory bus RAM (DRRAM). The memory 1109 in this embodiment includes, but is not limited to, these and any other suitable types of memory.

[0179] Processor 1110 may include one or at least two processing units; optionally, processor 1110 integrates an application processor and a modem processor, wherein the application processor mainly handles operations involving the operating system, user interface, and applications, and the modem processor mainly handles wireless communication signals, such as a baseband processor. It is understood that the aforementioned modem processor may also not be integrated into processor 1110.

[0180] This application embodiment also provides a chip, which includes a processor and a communication interface. The communication interface is coupled to the processor. The processor is used to run programs or instructions to implement the various processes of the above-described data storage method embodiment for the target memory, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0181] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a system-on-a-chip, system chip, chip system, or system-on-a-chip, etc.

[0182] This application provides a computer program product that is stored in a storage medium and executed by at least one processor to implement the various processes of the data storage method embodiment of the target memory described above, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0183] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0184] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a computer software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0185] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A data storage method for a memory, characterized in that, The memory includes a first storage area and a second storage area, wherein the first storage area operates between a first temperature value and a second temperature value; and the second storage area operates between a third temperature value and a fourth temperature value. The first temperature value is less than the second temperature value, and the fourth temperature value is greater than or equal to the third temperature value; The first temperature value is less than or equal to the third temperature value; The second temperature value is greater than or equal to the fourth temperature value; The method includes: Obtain the temperature value of the memory; If the memory triggers a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value, writing data to the second memory area is prohibited. If the memory triggers a preset transfer condition, and the temperature value is between the third temperature value and the fourth temperature value, the data temporarily stored in the first memory area is transferred to the second memory area. The method further includes: If the temperature value is not between the third temperature value and the fourth temperature value, the temperature adjustment device corresponding to the memory is controlled to adjust the temperature of the memory so that the temperature value of the memory is between the third temperature value and the fourth temperature value, wherein the temperature range between the third temperature value and the fourth temperature value corresponds to the second operating temperature range; If the temperature value of the memory is less than the second operating temperature range, the operating time and stop time of the heating device included in the temperature adjustment device are controlled to increase the temperature value of the memory to the second operating temperature range; The method further includes: If the current capacity percentage of the first storage area is greater than or equal to the preset capacity percentage, a first prompt is issued; the first prompt is used to notify the user to change the ambient temperature of the storage.

2. The method according to claim 1, characterized in that, Also includes: The duration during which the temperature value is not between the third temperature value and the fourth temperature value is obtained; If the duration is greater than or equal to a preset duration and the capacity percentage of the first storage area at the first moment is greater than or equal to a preset capacity percentage, a first prompt will be issued. The first prompt is used to notify the user to change the ambient temperature of the memory.

3. The method according to claim 1, characterized in that, Also includes: Obtain the correspondence between storage area type and operating temperature range, and the type of the second storage area; The operating temperature range corresponding to the type of the second storage area is determined from the correspondence to be between the third temperature value and the fourth temperature value.

4. The method according to claim 1, characterized in that, The determination of the memory triggering the preset transfer condition includes: Received the first preset instruction; And / or, confirm that the memory is in an idle state.

5. The method according to any one of claims 1 to 4, characterized in that, The first storage area includes a single-level storage unit and / or a three-level storage unit; the second storage area includes a four-level storage unit; the method further includes: Upon receiving a second preset instruction, the external data to be written is temporarily stored in the single-layer storage unit; Upon receiving a third preset instruction, the external data to be written is temporarily stored in the three-layer storage unit.

6. A data storage device for a memory, characterized in that, The memory includes a first storage area and a second storage area. The first storage area operates between a first temperature value and a second temperature value. The second storage area operates between a third temperature value and a fourth temperature value that is greater than or equal to the third temperature value. The first temperature value is less than or equal to the third temperature value; The second temperature value being greater than or equal to the fourth temperature value includes: Temperature value acquisition module, used to acquire the temperature value of the memory at a first moment; A write-prohibition module is used to prohibit writing data to the second storage area when it is determined that the memory triggers a preset transfer condition and the temperature value is not between the third temperature value and the fourth temperature value. A write-allowing module is used to transfer temporarily stored data to be written in the first storage area to the second storage area when it is determined that the memory triggers a preset transfer condition and the temperature value is between the third temperature value and the fourth temperature value. The data storage device of the memory further includes: a memory temperature adjustment module, used to control a temperature adjustment device corresponding to the memory to adjust the temperature of the memory so that the temperature value of the memory is between the third and fourth temperature values ​​when the temperature value is not between the third and fourth temperature values, wherein the temperature range between the third and fourth temperature values ​​corresponds to a second operating temperature range; if the temperature value of the memory is less than the second operating temperature range, the temperature value of the memory is increased to the second operating temperature range by controlling the working duration and stop time of the heating device included in the temperature adjustment device; and when the capacity percentage of the first storage area at the current moment is greater than or equal to a preset capacity percentage, a first prompt is issued; the first prompt is used to notify the user to change the ambient temperature of the memory.

7. A memory, characterized in that, The memory includes a controller, a first storage area, a second storage area, and a temperature sensor; The controller is used to acquire the temperature value of the memory detected by the temperature sensor at a first moment; If the memory triggers a preset transfer condition and the temperature value is not between the third and fourth temperature values, writing data to the second memory area is prohibited. And when it is determined that the memory triggers a preset transfer condition, and the temperature value is between the third temperature value and the fourth temperature value, the data temporarily stored in the first memory area is transferred to the second memory area; The memory also includes: a temperature adjustment device; A temperature adjustment device is used to adjust the temperature of the memory in response to a temperature control signal, such that the temperature value of the memory is between the third temperature value and the fourth temperature value; The controller is configured to, when the temperature value is not between the third temperature value and the fourth temperature value, control a temperature adjustment device corresponding to the memory to adjust the temperature of the memory so that the temperature value of the memory is between the third temperature value and the fourth temperature value, wherein the temperature range between the third temperature value and the fourth temperature value corresponds to a second operating temperature range; If the temperature value of the memory is less than the second operating temperature range, the operating time and stop time of the heating device included in the temperature adjustment device are controlled to increase the temperature value of the memory to the second operating temperature range; If the current capacity percentage of the first storage area is greater than or equal to the preset capacity percentage, a first prompt is issued; the first prompt is used to notify the user to change the ambient temperature of the storage.

8. An electronic device, characterized in that, Includes the memory as described in claim 7.

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