Semiconductor device

Abstract

A semiconductor device includes a first terminal, a second terminal positioned away from the first terminal, a first resistance segment coupled between the first terminal and the second terminal, a third terminal positioned away from the first terminal and the second terminal, a second resistance segment coupled between the second terminal and the third terminal, a first floating plate physically disposed proximate to the first resistance segment and including a first end coupled to one of the first terminal and the second terminal, and a second floating plate physically disposed proximate to the second resistance segment and including a first end coupled to one of the second terminal and the third terminal. The disposition of the floating plates can change the electric field around the resistance segments, making the electron distribution in the resistance more uniform and balanced, so that the resistance value of each resistance segment is close to its designed resistance value, thereby significantly improving the linearity of the resistance.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a semiconductor device. Background Technology

[0002] Resistors are ideally linear devices, meaning their output is proportional to their input. However, achieving highly linear resistors in integrated circuits is difficult or expensive. For example, the resistance of polycrystalline silicon (polysilicon, poly-Si, or poly) varies non-linearly with the applied voltage in the presence of an electric field. This non-linearity is caused by the accumulation of charge carriers (and thus a decrease in resistance) in the presence of a positive electric field, or conversely, by the depletion of charge carriers (and thus an increase in resistance) in the presence of a negative electric field.

[0003] Since this nonlinearity is undesirable in many applications, there is a great need for a new resistor structure with a finer coupling effect to improve the linearity of the resistor. Summary of the Invention

[0004] In view of this, the present invention provides a semiconductor device to solve the above-mentioned problems.

[0005] According to a first aspect of the present invention, a semiconductor device is disclosed, comprising:

[0006] First terminal;

[0007] The second terminal is located away from the first terminal;

[0008] The first resistor segment is coupled between the first terminal and the second terminal;

[0009] The third terminal is located away from the first terminal and the second terminal;

[0010] The second resistor segment is coupled between the second terminal and the third terminal;

[0011] A first floating plate, physically located close to the first resistor segment, and including a first end coupled to one of the first terminal and the second terminal; and

[0012] The second float plate is physically located close to the second resistor segment and includes a first end coupled to one of the second terminal and the third terminal.

[0013] According to a second aspect of the present invention, a semiconductor device is disclosed, comprising:

[0014] First terminal;

[0015] The second terminal is positioned away from the first terminal.

[0016] The first resistor segment is coupled between the first terminal and the second terminal;

[0017] The third terminal is located away from the first terminal and the second terminal;

[0018] The second resistor segment is coupled between the second terminal and the third terminal;

[0019] A first floating plate, physically located close to the first resistor segment, includes a first end coupled to one of the first terminal and the second terminal, and a second end serving as a floating end; and

[0020] The second float plate is physically disposed near the second resistor segment and includes a first end coupled to one of the second terminal and the third terminal, and a second end serving as a floating end.

[0021] At most one of the first end of the first float plate and the first end of the second float plate is electrically coupled to the second terminal.

[0022] According to a third aspect of the present invention, a semiconductor device is disclosed, comprising:

[0023] First terminal;

[0024] The second terminal is located away from the first terminal;

[0025] The first resistor segment is coupled between the first terminal and the second terminal;

[0026] The third terminal is located away from the first terminal and the second terminal;

[0027] The second resistor segment is coupled between the second terminal and the third terminal;

[0028] The first floating plate is physically located close to the first resistor segment and includes a first end coupled to the first terminal and a second end serving as a floating end;

[0029] The second float plate is physically located close to the second resistor segment and includes a first end coupled to the third terminal and a second end serving as a float.

[0030] A third floating plate, physically located close to the first resistor segment, includes a first end coupled to the second terminal and a second end serving as a floating end; and

[0031] The fourth float plate is physically disposed near the second resistor section and includes a first end coupled to the second terminal and a second end serving as a floating end.

[0032] The first float plate is disposed on one side of the first resistor segment, the third float plate is disposed on the other side of the first resistor segment, the second float plate is disposed on one side of the second resistor segment, and the fourth float plate is disposed on the other side of the second resistor segment.

[0033] The semiconductor device of the present invention includes: a first terminal; a second terminal located away from the first terminal; a first resistive segment coupled between the first terminal and the second terminal; a third terminal located away from the first terminal and the second terminal; a second resistive segment coupled between the second terminal and the third terminal; a first floating plate physically disposed close to the first resistive segment and including a first end coupled to one of the first terminal and the second terminal; and a second floating plate physically disposed close to the second resistive segment and including a first end coupled to one of the second terminal and the third terminal. In embodiments of the present invention, floating plates are disposed around the resistive segments to avoid or reduce the adverse effects of the electric field generated by the applied voltage on the resistive segments. The placement of the floating plates can change the electric field around the resistive segments, making the electron distribution within the resistor more uniform and balanced, thereby making the resistance value of each resistive segment comparable to its designed resistance value, thus significantly improving the linearity of the resistor. Attached Figure Description

[0034] Figure 1 A cross-sectional view of a semiconductor device according to an embodiment of the present invention is shown.

[0035] Figure 2 A cross-sectional view of a semiconductor device according to a first embodiment of the present invention is shown.

[0036] Figure 3 A cross-sectional view of a semiconductor device according to a second embodiment of the present invention is shown.

[0037] Figure 4 A cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention is shown.

[0038] Figure 5 Another exemplary semiconductor device according to a fourth embodiment of the present invention is shown. Detailed Implementation

[0039] In the following detailed description of embodiments of the invention, reference is made to the accompanying drawings, which form part of the invention, and which illustrate specific preferred embodiments in which the invention can be practiced. These embodiments have been described in sufficient detail to enable those skilled in the art to practice them, and it should be understood that other embodiments may be utilized, and mechanical, structural, and procedural changes may be made, without departing from the spirit and scope of the invention. Therefore, the following detailed description should not be construed as limiting, and the scope of the embodiments of the invention is defined only by the appended claims.

[0040] It will be understood that although the terms “first,” “second,” “third,” “primary,” “secondary,” etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or portion from another. Therefore, without departing from the teachings of the inventive concept, the first or primary element, component, region, layer, or portion discussed below may be referred to as a second or secondary element, component, region, layer, or portion.

[0041] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “under,” “above,” and “above” may be used herein to describe the relationship of an element or feature to it. Another element or feature is shown in the figure. In addition to the orientation described in the figure, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relative descriptive terms used herein may be interpreted accordingly. Additionally, it will be understood that when a “layer” is referred to as being “between” two layers, it can be the only layer between the two layers, or there may be one or more intermediate layers.

[0042] The terms “about,” “roughly,” and “about” generally mean a range of ±20%, ±10%, ±5%, ±3%, ±2%, ±1%, or ±0.5% of a specified value. The specified values ​​in this invention are approximate. Unless otherwise specified, the specified values ​​include the meanings of “about,” “roughly,” and “about.” The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used herein, the singular terms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise.

[0043] It will be understood that when an “element” or “layer” is referred to as being “on,” “connected to,” “coupled to,” or “adjacent to” another element or layer, it can be directly on, connected to, coupled to, or adjacent to the other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as being “directly on,” “directly connected to,” “directly coupled to,” or “immediately adjacent to” another element or layer, there are no intermediate elements or layers.

[0044] Note: (i) the same features will be represented by the same reference numerals throughout the figures and will not necessarily be described in detail in every figure in which they appear, and (ii) a series of figures may show different aspects of a single item, each of which is associated with various reference labels that may appear throughout the series or only in selected figures of the series.

[0045] Figure 1 A cross-sectional view of a semiconductor device according to an embodiment of the present invention is shown. According to one embodiment of the present invention, the semiconductor device 100 may be a resistive device (or apparatus), such as a resistor. In embodiments of the present invention, the resistive device may be composed of multiple resistive segments. Figure 1 As shown, a resistive device or resistor can be formed by resistive segments 120 and 122, wherein resistive segments 120 and 122 can have the same length or substantially the same length. Assuming the length of the resistive device or resistor is L, the length of resistive segment 120 can be L / 2, and the length of resistive segment 122 can also be L / 2. The resistance of the wiring between resistive segments 120 and 122 and / or at other locations can be neglected.

[0046] Semiconductor device 100 may include terminals N1, N2, and N3, wherein terminal N2 is located away from terminal N1, and terminal N3 is located away from terminals N1 and N2. Resistor segment 120 is coupled between terminals N1 and N2, and resistor segment 122 is coupled between terminals N2 and N3.

[0047] According to embodiments of the present invention, resistor segments 120 and 122 may have resistances that vary non-linearly with the applied voltage. In one embodiment of the present invention, resistor segments 120 and 122 may comprise polysilicon resistor devices.

[0048] like Figure 1 As shown, in one of the structures proposed for the highest linearity with a finer coupling effect, at least a first floating plate, such as floating plate 110, can be physically disposed near resistor segment 120, and a second floating plate (such as floating plate 130) can be physically disposed near resistor segment 122. In one embodiment of the invention, floating plate 110 is disposed on one side of resistor segment 120 (and resistor segments 120 and 122), and floating plate 130 is disposed on the opposite side of resistor segment 122 (and resistor segments 120 and 122). Furthermore, in one embodiment of the invention, floating plate 110 can be an upper floating plate (top floating plate), and floating plate 130 can be a lower floating plate (bottom floating plate).

[0049] Floating plate 110 may include one end being a non-floating end (i.e., coupled to a terminal) and the other end being a floating end (i.e., not coupled to any terminal, not coupled to any voltage, but floating). Floating plate 130 may also include one end being a non-floating end and the other end being a floating end (i.e., not coupled to any terminal).

[0050] As an example, the first end (non-floating end) of float plate 110 is coupled to one of terminals N1 and N2, and the first end (i.e., non-floating end) of float plate 130 is coupled to one of terminals N2 and N3. Note that in some embodiments of the invention, at most one of the first ends of float plate 110 and float plate 130 is electrically coupled to or connected to terminal N2. Therefore, in some other embodiments of the invention, it is also possible that neither of them (the first ends of float plate 110 and float plate 130) is electrically coupled to or connected to terminal N2.

[0051] In the first embodiment of the present invention, as Figure 1 As shown, the first end (i.e., the non-floating end) of the float plate 110 is coupled to terminal N1, and the first end (i.e., the non-floating end) of the float plate 130 is coupled to terminal N2.

[0052] It is worth noting that, although Figure 1 Two resistor segments are shown, but the number of resistor segments is not a limitation of the invention.

[0053] Figure 2 A cross-sectional view of a semiconductor device according to a first embodiment of the present invention is shown. According to one embodiment of the invention, the semiconductor device 200 may be a resistive device, such as a resistor, and may be formed by N resistive segments (in one embodiment, N may be an even number), such as resistive segments 220-1, 220-2, 220-3, 220-4…220-(N-1) and 220-N, wherein resistive segments 220-1 to 220-N have the same length or substantially the same length. Assuming the length of the resistive device or resistor is L, the length of each resistive segment may be L / N, where L is a positive number and N is a positive number greater than 1. In other embodiments, the number of resistive segments may also be an odd number.

[0054] According to embodiments of the present invention, resistor segments 220-1 to 220-N may have resistance that varies non-linearly with the applied voltage. In one embodiment of the present invention, resistor segments 220-1 to 220-N may include polysilicon resistor devices.

[0055] In proposed structures with finer coupling effects to achieve the highest linearity, such as Figure 2As shown, multiple floating plates, such as top floating plates (or upper floating plates) 210-1, 210-2…210-(N / 2), can be physically close together and above the resistor segments 220-1, 220-3…220-(N-1), and multiple floating plates, such as bottom floating plates (or lower floating plates) 230-1, 230-2…230-(N / 2), can be physically close to the resistor segments 220-2, 220-4…220-N and below the resistor segments 220-2, 220-4…220-N.

[0056] Except for the last resistor segment 220-N, each resistor segment may include two terminals, one of which is electrically coupled to or connected to the top floating plate, and the other terminal is electrically coupled to or connected to the bottom floating plate. Additionally, Figure 2 Each float has a floating end at one end. One terminal of resistor segment 220-N is connected to the bottom float 230-(N / 2), the other terminal is connected to voltage V2, and the other terminal is not connected to any float. One terminal of resistor segment 220-1 is connected to voltage V1 and also to the top float 210-1; the other terminal is connected to the next resistor segment 220-2 and also to the bottom float 230-1. Voltages V1 and V2 are different.

[0057] By implementing the proposed structure, the nonlinearity of resistance in one resistor segment at least partially compensates for the nonlinearity of resistance in another (e.g., adjacent) resistor segment. More specifically, when two different voltages (e.g., voltages V1 and V2 as shown in the figure) are applied to the two terminals of the resistive device (or the resistor formed by the resistor segment), respectively, electric fields can be generated between the resistor segment and the top floating plate and between the resistor segment and the bottom floating plate through the connection of the terminals of the resistor segment to the terminals (or one end) of the top floating plate and the bottom floating plate, respectively. Therefore, the impedance change in the resistor segment is offset by the impedance change in one or more adjacent resistor segments. Specifically, resistors in semiconductor devices are prone to nonlinearity problems, such as those with long lengths, due to the influence of electric fields. For example, as... Figure 1 As shown, when the voltage at one end of the resistor (e.g., V1) is 10V (volts) or other positive voltage values, this end of the resistor (e.g., the left side of resistor segment 120) is affected by a large voltage. Electrons within the resistor migrate under the influence of the electric field, causing a change in the actual impedance (e.g., in the design, resistor segments 120 and 122 are respectively...). Figure 1 The resistance value shown is 1 / 2. However, due to the large voltage applied to terminal V1, the actual impedance or resistance value of resistor segment 120 changes, becoming greater or less than... Figure 1The resistance value shown is 1 / 2, thus affecting the linearity of the resistance. In this embodiment of the invention, a floating plate is provided around the resistor segment to avoid or reduce the adverse effects of the electric field generated by the voltage applied to the V1 terminal on the resistor segment 120. The floating plate can change the electric field around the resistor segment 120, making the electron distribution in the resistor more uniform and balanced, so that the resistance value of the resistor segment 120 is approximately equal to or closer to the resistance value of the resistor segment 120. Figure 1 The resistance value shown is 1 / 2 (meaning the resistance value of each resistor segment is equivalent to or close to its design resistance value). Similarly, the arrangement of the float plate 130 can avoid or reduce the adverse effects of the electric field on the resistor segment 122 (a voltage will also be present at terminal N2 after voltage is applied to V1), making the resistance value of the resistor segment 122 approximately equal to or closer to its design resistance value. Figure 1 The resistance value is half of the resistance shown, thus significantly improving the linearity of the resistance. In one embodiment, float plate 110 and float plate 130 can be simultaneously disposed above resistor segments 120 and 122 (i.e., both are top float plates), or simultaneously disposed below resistor segments 120 and 122 (i.e., both are bottom float plates), or float plate 110 can be below resistor segment 120 and float plate 130 can be above resistor segment 122, etc., all of which can reduce the adverse effects of the electric field on the resistance. The length of the float plate and the corresponding resistor segment can be substantially the same to achieve a better effect, or they can be slightly different, which can also achieve the purpose of the present invention. The float plate and the corresponding resistor segment can be completely aligned (i.e., both ends are aligned), or one end can be aligned while the other end is not aligned (of course, the float plate will not extend to the corresponding position of the next or previous resistor segment). In this embodiment of the invention, two resistor segments are used as an example. The same principle applies to other numbers of resistor segments. For example, in an embodiment with N resistor segments, the floating plate will make the resistance value of each resistor segment approximately equal to or close to Ω / N (Ω is the total resistance or impedance).

[0058] According to one embodiment of the present invention, the floats can be implemented by a well process or a metal process. As an example, the top floats 210-1, 210-2…210-(N / 2) can be implemented by a metal layer, and the bottom floats 230-1, 230-2…230-(N / 2) can be implemented by a substrate well, such as an N-well or a P-well. As another example, the top floats 210-1, 210-2…210-(N / 2) can be implemented by a first metal layer, and the bottom floats 230-1, 230-2…230-(N / 2) can be implemented by a second metal layer. Furthermore, a first insulating layer or insulating region formed of dielectric material can be inserted between the top floats 210-1, 210-2…210-(N / 2) and the resistive segments 220-1, 220-3…220-(N-1), and a second insulating layer or insulating region formed of dielectric material can be inserted between the resistive segments 220-2, 220-4…220-N and the bottom floats 230-1, 230-2…230-(N / 2). Figure 2 The example shown illustrates how a floating plate is placed around the resistor segment to avoid or reduce the adverse effects of the electric field generated by the applied voltage at terminal V1 on the resistor segment. The floating plate alters the electric field around the resistor segment, making the electron distribution within the resistor more uniform and balanced, thus ensuring that the resistance value of the resistor segment is approximately equal to or closer to the applied voltage. Figure 2 The resistance value shown is Ω / N (Ω is...) Figure 2 The total resistance or impedance shown is used to significantly improve the linearity of the resistor.

[0059] See again Figure 1 In the second embodiment of the present invention, the first end (i.e., the non-floating end) of the float plate 110 can be coupled to the terminal N2, and the first end (i.e., the non-floating end) of the float plate 130 can be coupled to the terminal N3.

[0060] Figure 3 A cross-sectional view of a semiconductor device according to a second embodiment of the present invention is shown. According to an embodiment of the present invention, the semiconductor device 300 may be a resistive device, such as a resistor, and may be formed by N resistive segments, such as resistive segments 320-1, 320-2, 320-3, 320-4…320-(N-1) and 320-N, wherein resistive segments 320-1 to 320-N have the same length or substantially the same length. Assuming the length of the resistive device or resistor is L, the length of each resistive segment may be L / N, where L is a positive number and N is a positive number greater than 1.

[0061] According to one embodiment of the present invention, resistor segments 320-1 to 320-N may have resistance that varies non-linearly with the applied voltage. In another embodiment of the present invention, resistor segments 320-1 to 320-N may include polysilicon resistor devices.

[0062] like Figure 3 As shown, in the proposed structure with a finer coupling effect and higher linearity, multiple floating plates, such as top floating plates 310-1, 310-2…310-(N / 2), can be physically close together and above the resistor segments 320-1, 320-3…320-(N-1), and multiple floating plates, such as bottom floating plates 330-1, 330-2…330-(N / 2), can be physically close to the resistor segments 320-2, 320-4…320-N and below the resistor segments 320-2, 320-4…320-N.

[0063] In addition to the first resistor segment 320-1, each resistor segment may include two terminals, one of which is electrically coupled to or connected to the top floating plate, and the other terminal is electrically coupled to or connected to the bottom floating plate. Furthermore, Figure 3 One end of the floating plate is a floating terminal. One terminal of resistor segment 320-1 is connected to voltage V1, and this terminal is not connected to any floating plate; the other terminal is connected to the next resistor segment 320-2, and also to the top floating plate 310-1. One terminal of resistor segment 320-N is connected to the top floating plate 310-(N / 2), and also to the previous resistor segment 320-(N-1); the other terminal is connected to voltage V2, and also to the bottom floating plate 330-(N / 2). Voltages V1 and V2 are different. For Figure 3 The example shown illustrates how a floating plate is placed around the resistor segment to avoid or reduce the adverse effects of the electric field generated by the applied voltage at terminal V1 on the resistor segment. The floating plate alters the electric field around the resistor segment, making the electron distribution within the resistor more uniform and balanced, thus ensuring that the resistance value of the resistor segment is approximately equal to or closer to the applied voltage. Figure 3 The resistance value shown is Ω / N (Ω is...) Figure 3 The total resistance or impedance shown is used to significantly improve the linearity of the resistor.

[0064] By implementing the proposed structure, the resistive nonlinearity of one resistive segment at least partially compensates for the resistive nonlinearity of another (e.g., adjacent) resistive segment. More specifically, when two different voltages (e.g., voltages V1 and V2 as shown in the figure) are applied to the two terminals of the resistive device (or the resistor formed by the resistive segments), respectively, electric fields can be generated between the resistive segment and the top floating plate, and between the resistive segment and the bottom floating plate, through the connection of the terminals of the resistive segment to the terminals (or one end) of the top floating plate and the bottom floating plate, respectively. Therefore, the impedance change in the resistive segment is canceled out by the impedance change in one or more adjacent resistive segments.

[0065] According to one embodiment of the present invention, the floats can be implemented using a trap process or a metal process. As an example, the top floats 310-1, 310-2…310-(N / 2) can be implemented using a metal layer, while the bottom floats 330-1, 330-2…330-(N / 2) can be implemented using a substrate trap, such as an N-trap or a P-trap. As another example, the top floats 310-1, 310-2…310-(N / 2) can be implemented using a first metal layer, and the bottom floats 330-1, 330-2…330-(N / 2) can be implemented using a second metal layer. Furthermore, a first isolation layer or isolation region formed of dielectric material can be inserted between the top floats 310-1, 310-2…310-(N / 2) and the resistance segments 320-1, 320-3…320-(N-1), and a second isolation layer or isolation region formed of dielectric material can be inserted between the resistance segments 320-2, 320-4…320-N and the bottom floats 330-1, 330-2…330-(N / 2).

[0066] Refer again Figure 1 In the third embodiment of the present invention, the first end (i.e., the non-floating end) of the float plate 110 can be coupled to terminal N1, and the first end (i.e., the non-floating end) of the float plate 130 can be connected to terminal N3. Since those skilled in the art can... Figure 2 and Figure 3 The teachings derive the structure of the semiconductor device with N resistor segments according to the third embodiment of the present invention; therefore, for the sake of brevity, the corresponding figures and descriptions are omitted here. The present invention Figure 1-3 In this embodiment, the floating plates of adjacent resistor segments are staggered vertically and connected to different ends of the same resistor segment. This can save the area occupied by the semiconductor device and achieve a better effect of improving linearity.

[0067] In the fourth embodiment of the present invention, based on Figure 1The structure shown allows for the addition of a second float plate, physically positioned close to resistor segment 120, relative to float plate 110 which is also physically located near resistor segment 120. The first end (non-floating end) of this float plate is coupled to another of terminals N1 and N2. Note that the two float plates physically positioned close to resistor segment 120 can be positioned on different or opposite sides of resistor segment 120, and both float plates have one end that is a floating end (or a floating terminal). For example... Figure 4 As shown, there are two floats coupled to terminal N2, one of which is a bottom float 430-1, used to improve the electric field of resistor segment 420-1, and the other is a top float 410-2, used to improve the electric field of resistor segment 420-2.

[0068] Similarly, an additional float plate can be added and positioned physically close to resistor segment 122, and its first end (non-floating end) is coupled to another of terminals N2 and N3, relative to float plate 130, which is also physically close to resistor segment 122. Note that the two float plates positioned physically close to resistor segment 122 can be positioned on different or opposite sides of resistor segment 122, and both float plates have one end that is a floating end.

[0069] Figure 4 A cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention is shown. According to one embodiment of the present invention, the semiconductor device 400 may be a resistive device, such as a resistor, and may be formed by four resistive segments, such as resistive segments 420-1, 420-2, 420-3, and 420-4, wherein resistive segments 420-1 to 420-4 have the same length or substantially the same length. Assuming the length of the resistive device or resistor is L, the length of each resistive segment may be L / 4.

[0070] Semiconductor device 400 may include terminals N1, N2, N3, N4, and N5. Resistor segment 420-1 is coupled between terminals N1 and N2, resistor segment 420-2 is coupled between terminals N2 and N3, resistor segment 420-3 is coupled between terminals N3 and N4, and resistor segment 420-4 is connected between terminals N4 and N5.

[0071] According to embodiments of the present invention, resistor segments 420-1 to 420-4 may have resistance that varies non-linearly with the applied voltage. In one embodiment of the present invention, resistor segments 420-1 to 420-4 may include polysilicon resistor devices.

[0072] like Figure 4As shown, in the structure with a finer coupling effect proposed for the highest linearity, floats, such as top floats 410-1 to 410-4, can be physically disposed above resistor segments 420-1 to 420-4; floats, such as bottom floats 430-1 to 430-4, can be physically disposed near and below resistor segments 420-1 to 420-4.

[0073] like Figure 4 As shown, two float plates 410-1 and 430-1 are physically located close to resistor segment 420-1 and positioned on different or opposite sides of resistor segment 420-1, wherein the first end (i.e., the non-floating end) of float plate 410-1 is coupled to terminal N1 and the first end (i.e., the non-floating end) of float plate 430-1 is coupled to terminal N2. Similarly, two float plates 410-2 and 430-2 are physically located close to resistor segment 420-2 and positioned on different or opposite sides of resistor segment 420-2, wherein the first end (i.e., the non-floating end) of float plate 410-2 is coupled to terminal N2 and the first end (i.e., the non-floating end) of float plate 430-2 is coupled to terminal N3, and so on. In other embodiments, float plate 430-1 may also be connected to terminal N1.

[0074] In the fourth embodiment, two floats disposed on different or opposite sides of the resistor segment can be electrically coupled or connected to the same terminal. As an example, the top float 410-2 and the bottom float 430-1 can both be electrically coupled or connected to terminal N2, the top float 410-3 and the bottom float 430-2 can both be electrically coupled or connected to terminal N3, and so on.

[0075] By implementing the proposed structure, the resistive nonlinearity of one resistive segment at least partially compensates for the resistive nonlinearity of another (e.g., adjacent) resistive segment. More specifically, when two different voltages (e.g., voltages V1 and V2 as shown in the figure) are applied to the two terminals of the resistive device (or the resistor formed by the resistive segments), respectively, electric fields can be generated between the resistive segment and the top floating plate, and between the resistive segment and the bottom floating plate, through the connection of the terminals of the resistive segment to the terminals (or one end) of the top floating plate and the bottom floating plate, respectively. Therefore, the impedance change in the resistive segment is canceled out by the impedance change in one or more adjacent resistive segments. Figure 4In the illustrated embodiment, since each resistor segment has more floating plates surrounding it, the adverse effects of applied voltage on the resistor segment can be further avoided or reduced, thereby making the resistance value of each resistor segment closer to Ω / N (Ω is the total resistance or impedance), further improving the linearity of the resistor. In this embodiment, resistor segments 420-1 to 420-4 can be polysilicon, floating plates 410-1 to 410-4 can be metal, and floating plates 430-1 to 430-4 can be substrate wells. In this embodiment of the invention, the top and bottom floating plates provided for the same resistor segment are not connected to the same terminal, but to two different terminals of the resistor segment, to achieve a finer resistor coupling effect and better linearity. In this embodiment, assuming V1 = 0V and V2 = 4V, through this invention... Figure 4 The structure allows for a uniform voltage distribution across each resistor segment (i.e., achieving...). Figure 4 (The resistances of the four resistor segments are basically equal.) For example, the voltage at the left end of resistor segment 420-1 is 0V and the voltage at the right end is 1V; the voltage at the left end of float plate 410-1 is 0V and the voltage at the right end of float plate 430-1 is 1V; the voltage at the left end of resistor segment 420-2 is 1V and the voltage at the right end is 2V; the voltage at the left end of float plate 410-2 is 1V and the voltage at the right end of float plate 430-2 is 2V; the voltage at the left end of resistor segment 420-3 is 2V and the voltage at the right end is 3V; the voltage at the left end of float plate 410-3 is 2V and the voltage at the right end of float plate 430-3 is 3V; the voltage at the left end of resistor segment 420-4 is 3V and the voltage at the right end is 4V; the voltage at the left end of float plate 410-4 is 3V and the voltage at the right end of float plate 430-4 is 4V. Therefore, the embodiments of the present invention provide a more refined resistive coupling effect, thereby providing better resistive linearity, and the area occupied by the settings of this embodiment is reduced, improving linearity while saving area as much as possible.

[0076] It is worth noting that, although Figure 4 Four resistor segments are shown, but the number of resistor segments is not a limitation of the invention.

[0077] Figure 5 Another exemplary semiconductor device according to a fourth embodiment of the present invention is shown, which may be Figure 4 An extension of the structure shown. The semiconductor device 500 can be a resistive device, such as a resistor, and can be formed into resistive segments by N, such as resistive segments 520-1, 520-2, 520-3, 520-4…520-(N-1) and 520-N, where resistive segments 520-1 to 520-N have the same length or substantially the same length. Assuming the length of the resistive device or resistor is L, the length of each resistive segment may be L / N, where L is a positive number and N is a positive number greater than 1.

[0078] In the proposed structure with a finer coupling effect and higher linearity, such as Figure 5 As shown, a pair of floats, including a top float and a bottom float, can be physically located close to a resistor segment and positioned on different sides or opposite sides of the resistor segment. Therefore, in the fourth embodiment, each resistor segment may include two terminals, one terminal electrically coupled to or connected to the top float, and the other terminal electrically coupled to or connected to the bottom float. Furthermore, Figure 5 Each of the floats, for example, the top floats 510-1 to 510-N disposed above the resistor sections 520-1 to 520-N and the floats disposed above the resistor sections 520-1 to 520-N. Bottom floating plate below One end is a floating end.

[0079] Note that in the fourth embodiment of the invention, a pair of floating plates physically located near the same resistance segment are electrically coupled or connected to different terminals of that resistance segment. As an example, a pair of floating plates 510-1 and 530-1 physically located near the same resistance segment 520-1 are electrically coupled or connected to different terminals N1 and N2 of the resistance segment 520-1; a pair of floating plates 510-2 and 530-2 physically located near the same resistance segment 520-2 are electrically coupled or connected to different terminals N2 and N3 of the resistance segment 520-2, and so on. In this way, when two different voltages (voltages V1 and V2 as shown) are applied to the two terminals of the resistive device respectively, the pair of floating plates physically located near the same resistance segment can couple different electric potentials.

[0080] Furthermore, a pair of floats physically located close to adjacent resistor segments can be electrically coupled or connected to the same terminal. As an example, float pairs 510-2 and 530-1 are both electrically coupled or connected to terminal N2, float pairs 510-3 and 530-2 are both electrically coupled or connected to terminal N3, and so on.

[0081] Similarly, by implementing the proposed structure, the nonlinearity of resistance in one resistor segment at least partially compensates for the nonlinearity of resistance in another (e.g., adjacent) resistor segment.

[0082] According to one embodiment of the invention, the floats can be implemented using a trap process or a metal process. For example, the top floats 510-1 to 510-N can be implemented using a metal layer, while the bottom floats 530-1 to 530-N can be implemented using a substrate trap, such as an N-trap or a P-trap. As another example, the top floats 510-1 to 510-N can be implemented using a first metal layer, while the bottom floats 530-1 to 530-N can be implemented using a second metal layer. Furthermore, a first insulating layer or insulating region formed of a dielectric material can be inserted between the top floats 510-1 to 510-N and the resistive segments 520-1 to 520-N, and a second insulating layer or insulating region formed of a dielectric material can be inserted between the resistive segments 520-1 to 520-N and the bottom floats 530-1 to 530-N.

[0083] Those skilled in the art will readily observe that numerous modifications and alterations can be made to the apparatus and method while maintaining the teachings of this invention. Therefore, the foregoing disclosure should be interpreted as being limited only by the scope and limits of the appended claims.

Claims

1. A semiconductor device, characterized by comprising: include: First terminal; The second terminal is located away from the first terminal; The first resistor segment is coupled between the first terminal and the second terminal; The third terminal is located away from the first terminal and the second terminal; The second resistor segment is coupled between the second terminal and the third terminal; A first floating plate is physically located close to the first resistor segment and includes a first end coupled to the first terminal; as well as The second float plate is physically located close to the second resistor segment and includes a first end coupled to the second terminal; Among them, only the first floating plate is physically close to the first resistor segment, and only the second floating plate is physically close to the second resistor segment.

2. The semiconductor device as claimed in claim 1, characterized in that, The first float also includes a second end as a floating end, and the length of the first float is the same as the length of the first resistor segment.

3. The semiconductor device as claimed in claim 1, characterized in that, The second float also includes a second end as a floating end, and the length of the second float is the same as the length of the second resistor segment.

4. The semiconductor device as claimed in claim 1, characterized in that, The first floating plate is disposed on one side of the first resistor segment and the second resistor segment, and the second floating plate is disposed on the opposite side of the first resistor segment and the second resistor segment.

5. The semiconductor device as claimed in claim 1, characterized in that, The first resistor segment and the second resistor segment have the same length.

6. The semiconductor device as claimed in claim 1, characterized in that, Also includes: A first isolation layer is located between the first resistive segment and the first floating plate; as well as The second isolation layer is located between the second resistor segment and the second floating plate.

7. The semiconductor device as claimed in claim 1, characterized in that, The first and second resistor segments include polysilicon resistor devices.

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