Spin orbit torque superlattice material, magnetic racetrack device, magnetic tunnel junction device

Abstract

The present disclosure provides a spin-orbit torque superlattice material, comprising a plurality of superlattice units sequentially stacked to form a multi-period superlattice structure, each of the superlattice units comprising: a spin Hall layer having a spin Hall effect for converting an electric charge flow into a high-density spin flow; a magnetic layer located above the spin Hall layer and flipping a magnetization direction under the action of the spin flow; and a symmetry-breaking layer located above the magnetic layer for breaking spatial inversion symmetry and enhancing magnetic anisotropy of the magnetic layer; the symmetry-breaking layer is an insulating film or a conductive film having a spin Hall angle opposite to that of the spin Hall layer. The present disclosure also provides a magnetic racetrack device and a magnetic tunnel junction device based on the spin-orbit torque superlattice material.

Description

Technical Field

[0001] This disclosure relates to the fields of semiconductor and information science and technology, and in particular to a spin orbital moment superlattice material, a magnetic track device, and a magnetic tunnel junction device. Background Technology

[0002] Chips based on magnetic tunnel junctions (MTJs) or magnetic racetracks, such as memory, logic devices, and sensors, offer advantages like low power consumption, high density, high speed, radiation resistance, and non-volatility, making them highly promising for applications in the semiconductor industry, mobile smart terminals, aerospace navigation, and superconducting quantum computing. However, the materials required for high-performance MTT and magnetic racetrack devices, which simultaneously possess high thermal stability and high spin-orbit moment efficiency, are difficult to obtain.

[0003] Therefore, how to provide a magnetic material that combines high vertical magnetic anisotropy and high spin-orbit moment efficiency, and develop high-performance storage and computing chip technology based on this, has become an urgent technical challenge. Summary of the Invention

[0004] (i) Based on the above problems, this disclosure provides a spin orbital moment superlattice material, a magnetic track device, and a magnetic tunnel junction device to alleviate the above-mentioned technical problems in the prior art.

[0005] (II) Technical Solution

[0006] One aspect of this disclosure provides a spin-orbit-moment superlattice material comprising a plurality of superlattice units stacked sequentially to form a multi-period superlattice structure, each of the superlattice units comprising: a spin Hall layer, a magnetic layer, and a symmetry-breaking layer.

[0007] The spin Hall layer exhibits the spin Hall effect, used to convert charge flow into high-density spin flow; the magnetic layer is located above the spin Hall layer, and under the influence of the spin flow, it reverses the magnetization direction; the symmetry-breaking layer is located above the magnetic layer, used to break spatial inversion symmetry and enhance the magnetic anisotropy of the magnetic layer; the symmetry-breaking layer is an insulating thin film, or a conductive thin film with a spin Hall angle opposite to that of the spin Hall layer.

[0008] According to an embodiment of this disclosure, the optimal thickness of the spin Hall layer is twice the spin diffusion length of the spin Hall layer.

[0009] According to embodiments of this disclosure, the thickness of the spin Hall layer is set to 0.2 nm to 15 nm; the thickness of the magnetic layer is 0.1 nm to 20 nm; and the thickness of the symmetry-breaking layer is 0.2 nm to 5 nm.

[0010] In another aspect of this disclosure, a magnetic track device is provided, comprising: a substrate; a magnetic track located on the substrate, formed of the superlattice material of claim 1, for providing a channel for the movement and transmission of logical information units such as magnetic domains and magnetic skyrmions; and a protective layer located on the magnetic track for preventing the magnetic track from being hydrolyzed, oxidized, or corroded.

[0011] According to an embodiment of this disclosure, the magnetic track device further includes an adhesion layer located between the substrate and the magnetic track, for enhancing the adhesion between the magnetic track and the substrate.

[0012] In another aspect, this disclosure provides a magnetic tunnel junction device, comprising: a substrate; an adhesion layer disposed on the substrate; a magnetic free layer disposed on the adhesion layer, composed of the aforementioned spin-orbit moment superlattice material, for passing current to reverse the magnetization direction; a write electrode electrically connected to the magnetic free layer for providing a write current; a tunneling barrier layer located on the magnetic free layer; a magnetic reference layer located on the tunneling barrier layer, having perpendicular magnetic anisotropy and a defined magnetization direction; a pinning layer located on the magnetic reference layer for fixing the magnetization direction of the magnetic reference layer; a protective layer located on the pinning layer for preventing device hydrolysis, oxidation, or corrosion; and a read electrode disposed on the protective layer for providing a read current.

[0013] Another aspect of this disclosure provides a magnetic tunnel junction device, comprising: a substrate; an adhesion layer disposed on the substrate; a read electrode disposed on the adhesion layer for providing a read current; a pinning layer located on the read electrode; a magnetic reference layer located on the pinning layer, having perpendicular magnetic anisotropy and a defined magnetization direction, and fixing the magnetization direction under the action of the pinning layer; a tunneling barrier layer located on the magnetic reference layer; a magnetic free layer disposed on the tunneling barrier layer, composed of the spin-orbit moment superlattice material of claim 1, for passing current to reverse the magnetization direction; a write electrode electrically connected to the magnetic free layer for providing a write current; and a protective layer located on the magnetic free layer for preventing device hydrolysis, oxidation, or corrosion.

[0014] According to an embodiment of this disclosure, when the magnetization direction of the magnetic free layer is parallel to the magnetization direction of the magnetic reference layer, the magnetic tunnel junction device is in a low-resistance state, enabling the writing of data "0" into the magnetic tunnel junction device.

[0015] According to an embodiment of this disclosure, when the magnetization direction of the magnetic free layer is parallel to the magnetization direction of the magnetic reference layer, the magnetic tunnel junction device is in a low-resistance state, thereby enabling the writing of data "1" into the magnetic tunnel junction device.

[0016] (III) Beneficial Effects

[0017] As can be seen from the above technical solutions, the spin orbital moment superlattice material, magnetic track device, and magnetic tunnel junction device disclosed herein have at least one or a portion of the following beneficial effects:

[0018] (1) It can simultaneously achieve high vertical magnetic anisotropy and huge vertical magnetic anisotropy;

[0019] (2) It can be driven by low current and can be erased and rewritten an unlimited number of times to meet the needs of high density, high reliability and large-scale integration;

[0020] (3) It can be widely developed for use in storage, logic and computing devices and electronic chips that can be integrated into mobile phones, computers, electronic watches or other wearable devices. Attached Figure Description

[0021] Figure 1 A schematic diagram of a three-dimensional structure of a spin-orbit moment superlattice material according to an embodiment of the present disclosure is shown.

[0022] Figure 2 A schematic diagram of the spin-orbit moment efficiency of a superlattice material according to an embodiment of the present disclosure is shown in the case of 1, 5, and 10 repetition periods.

[0023] Figure 3a The schematic diagram illustrates a three-dimensional structural schematic of a magnetic tunnel junction device according to an embodiment of the present disclosure;

[0024] Figure 3b A schematic diagram of a three-dimensional structure of a magnetic tunnel junction device according to another embodiment of the present disclosure is shown.

[0025] Figure 4 A schematic diagram of the three-dimensional structure of a magnetic track device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0026] This disclosure provides a spin-orbit moment superlattice material, and magnetic race track devices and magnetic tunnel junction devices based on the superlattice material, which can simultaneously achieve high perpendicular magnetic anisotropy and huge spin-orbit moment efficiency, and can drive the magnetic tunnel junction to flip or the magnetic race track to move with low current.

[0027] The core structure of a magnetic tunnel junction (MTJ) consists of three parts: a magnetic free layer, a magnetic reference layer, and a barrier layer located between them. The magnetic moment of the magnetic reference layer is pinned in a certain direction, while the magnetic moment of the magnetic free layer can be freely flipped. The core structure of the magnetic track device is a dumbbell-shaped structure with both spin-orbit torque and perpendicular magnetic anisotropy. Information processing and transmission are achieved by driving the movement of magnetic domains or magnetic skyrmions within it, and it holds promise for applications in high-speed, low-power logic and in-memory computing devices. In realizing this disclosure, the inventors discovered that traditional methods utilize the Oersted magnetic field generated by a current-carrying conductor to drive the flipping of the MTJ or the movement of magnetic domains or magnetic skyrmions in the magnetic track device, resulting in high power consumption and low integration density. In contrast, using a current-generated spin-orbit torque (SOT) to achieve high-speed flipping between the "0" and "1" states of the MTJ and to drive the movement of magnetic domains or magnetic skyrmions in the magnetic track becomes an ideal choice. Theoretically, using spin-orbit torque as the driving method can achieve ultra-low power consumption, sub-nanosecond write speeds, low bit error rate writing, and unlimited erase / write cycles. However, high-performance magnetic tunnel junctions and magnetic track devices require materials to possess both high thermal stability and high spin-orbit moment efficiency. High thermal stability necessitates materials with high perpendicular magnetic anisotropy, but the interfacial perpendicular magnetic anisotropy of magnetic monolayers is typically weak, failing to guarantee device thermal stability at the nanoscale. Increasing the thickness of the magnetic monolayer to introduce shape-perspective or bulk perpendicular magnetic anisotropy can achieve high thermal stability. However, traditional interfacial spin-orbit moments provided by heavy metals or topological materials become ineffective with large magnetic layer thicknesses. This is because interfacial spin-orbit moment efficiency is inversely proportional to the magnetic layer thickness, and increasing the spin-orbit moment intensity by supplying a large current will burn out the device. Therefore, designing and fabricating magnetic materials with both high perpendicular magnetic anisotropy and high spin-orbit moment efficiency, and developing high-performance memory and computing chip technologies, has become a critical challenge.

[0028] To make the objectives, technical solutions, and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0029] In this disclosure, a spin-orbit moment superlattice material is provided, such as... Figure 1 As shown, the spin-orbit moment superlattice material comprises multiple superlattice units stacked sequentially to form a multi-period superlattice structure, each of the superlattice units comprising:

[0030] Spin Hall layer 10 has a strong spin Hall effect and is used to convert charge flow into high-density spin flow;

[0031] The magnetic layer 20, located above the spin Hall layer, is used to reverse the magnetization direction under the action of the aforementioned spin current.

[0032] The symmetry-breaking layer 30, located above the magnetic layer, is composed of an insulating film or a conductive film with a spin Hall angle opposite to that of the spin Hall layer, and is used to break the spatial inversion symmetry and enhance the vertical magnetic anisotropy of the magnetic layer.

[0033] The aforementioned three-layer film, consisting of spin Hall layer 10, magnetic layer 20, and symmetry-broken layer 30, is stacked with superlattice units as basic repeating units to form a multi-periodic superlattice structure.

[0034] like Figure 1 As shown, the spin orbital moment superlattice material includes: a spin Hall layer 10; a magnetic layer 20 located above the spin Hall layer 10; a symmetry-breaking layer 30 located above the magnetic layer 20; and a multi-period superlattice structure formed by stacking the three layers of spin Hall layer 10, magnetic layer 20, and symmetry-breaking layer 30 as basic repeating units.

[0035] According to embodiments of this disclosure, the spin Hall layer 10 has a high charge-spin conversion efficiency, used to convert the charge flow into a high-density spin flow; the magnetic layer 20 has vertical magnetic anisotropy, which flips the magnetization direction under the action of the spin flow; the symmetry breaking layer 30 is composed of an insulating film or a conductive film with a spin Hall angle opposite to that of the spin Hall layer, used to break the spatial inversion symmetry and enhance the vertical magnetic anisotropy or spin orbit moment of the magnetic layer.

[0036] According to embodiments of this disclosure, the spin-orbit moment efficiency of the superlattice material increases with the increase of the superlattice repetition period number, ideally increasing proportionally with the superlattice repetition period number.

[0037] According to embodiments of this disclosure, the material of the spin Hall layer is any material capable of exhibiting the spin Hall effect or charge-spin flow conversion, including: alloys containing one or more elements selected from Pt, Au, Ta, Pd, Ru, Ir, W, Hf, Cr, Mn, Tb, and Bi; multilayer films; compounds; topological insulators; topological half-metals; and two-dimensional materials. The thickness of the spin Hall layer is set to 0.2 nm to 15 nm, preferably twice the spin diffusion length of the spin Hall layer, and typically between 1 nm and 4 nm, to balance the spin orbital moment generation efficiency and the write current magnitude.

[0038] According to embodiments of this disclosure, the material of the magnetic layer is a single-layer or multi-layer film with ferromagnetism, antiferromagnetism, or ferrimagnetism, such as Co, Co-Fe-B, Co-Mn-Ga, CoPt, Fe-Tb, Gd-Co, Mn-Al, Co / Ni, Co-Pt, or Gd-Fe-Co. The thickness of the magnetic layer is 0.1 nm to 20 nm, preferably 0.4 nm to 2 nm.

[0039] According to embodiments of this disclosure, the material of the symmetry-breaking layer is an insulating material or a conductive material having a spin Hall angle opposite to that of the spin Hall layer, such as SiO2, MgO, Al2O2, Si3N4, etc., and the thickness of the symmetry-breaking layer is 0.2 nanometers to 5 nanometers.

[0040] According to embodiments of this disclosure, such as Figure 2 As shown, the superlattice material [2 nm Pt / 0.8 nm Co / 2 nm MgO] according to an embodiment of this disclosure n As the number of repetition cycles n increases from 1 to 5 and then to 10, the corresponding spin-orbit moment efficiencies monotonically increase (to 0.15, 0.27, and 0.57, respectively).

[0041] This disclosure also provides a magnetic tunnel junction device, as described in one embodiment of this disclosure, such as... Figure 3a As shown, the magnetic tunnel junction device includes:

[0042] Substrate 1;

[0043] Adhesion layer 7 is disposed on the substrate;

[0044] The magnetic free layer 2, disposed on the adhesive layer, is made of the aforementioned spin orbital moment superlattice material and is used to pass current through it to reverse the magnetization direction.

[0045] The write electrode 5 is electrically connected to the magnetic free layer 2 and is used to provide write current;

[0046] Tunneling through the barrier layer 4, located on the magnetic free layer 2;

[0047] The magnetic reference layer 3 is located on the tunneling barrier layer 4 and has vertical magnetic anisotropy and a defined magnetization direction.

[0048] Pinning layer 6, located on the magnetic reference layer 3, is used to fix the magnetization direction of the magnetic reference layer 3;

[0049] Protective layer 8, located on the pinning layer 6, is used to prevent device hydrolysis, oxidation, or corrosion; and

[0050] Reading electrode 9, disposed on the protective layer, is used to provide read current for the magnetic tunnel junction resistance.

[0051] According to embodiments of this disclosure, the magnetic tunnel junction can be constructed from bottom to top as follows: substrate 1, adhesive layer 7, magnetic free layer 2, barrier layer 4, magnetic reference layer 3, pinning layer 6, magnetic protective layer 8, and readout electrode 9; or it can be constructed as: substrate 1, adhesive layer 7, readout electrode 9, pinning layer 6, magnetic reference layer 3, barrier layer 4, magnetic free layer 2, and magnetic protective layer 8. The magnetic tunnel junction can achieve its corresponding function by being fabricated in any of these orders.

[0052] For example, this disclosure also provides another magnetic tunnel junction device, such as in another embodiment of this disclosure. Figure 3b As shown, the magnetic tunnel junction device includes:

[0053] Substrate 1;

[0054] Adhesion layer 7 is disposed on the substrate;

[0055] The read electrode 9 is disposed on the adhesive layer 7 and is used to provide the read current for the magnetic tunnel junction resistance;

[0056] Pinning layer 6 is located on the reading electrode 9;

[0057] The magnetic reference layer 3, located on the pinning layer 6, has perpendicular magnetic anisotropy and a defined magnetization direction, and the magnetization direction is fixed under the action of the pinning layer 6;

[0058] Tunneling through barrier layer 4, located on magnetic reference layer 3;

[0059] The magnetic free layer 2, disposed on the tunneling barrier layer 4, is made of the aforementioned spin orbital moment superlattice material and is used to pass current through it to reverse the magnetization direction.

[0060] The write electrode 5, electrically connected to the magnetic free layer 2, is used to provide write current; and

[0061] The protective layer 8, located on the magnetic free layer 2, is used to prevent the device from hydrolysis, oxidation or corrosion.

[0062] According to an embodiment of this disclosure, when a current is applied to the write electrode 5 of the magnetic tunnel junction, the current generates a spin current and a spin orbital moment, and the magnetization direction of the magnetic free layer 2 in the magnetic tunnel junction is reversed under the action of the spin current and the spin orbital moment.

[0063] According to embodiments of this disclosure, when the magnetization direction of the magnetic free layer 2 is parallel to the magnetization direction of the magnetic reference layer 3, the magnetic tunnel junction is in a low-resistance state, enabling the writing of data "0" in the magnetic tunnel junction; when the magnetization direction of the magnetic free layer 2 is parallel to the magnetization direction of the magnetic reference layer 3, the magnetic tunnel junction is in a low-resistance state, enabling the writing of data "1" in the magnetic tunnel junction; the resistance of the magnetic tunnel junction is the resistance between the write electrode 5 and the read electrode 9.

[0064] According to embodiments of this disclosure, the material of the magnetic free layer 2 is a multi-period giant spin orbital moment superlattice formed by stacking three layers: a spin Hall layer, the magnetic layer, and the symmetry-broken layer, which are basic repeating units.

[0065] According to embodiments of this disclosure, the magnetic reference layer 3 is made of a single-layer or multi-layer film with ferromagnetism, antiferromagnetism, or ferrimagnetism, such as Co, Co-Fe-B, Co-Mn-Ga, CoPt, Fe-Tb, Gd-Co, Mn-Al, Co / Ni, Co-Pt, or Gd-Fe-Co, with a thickness of 0.1 nm to 50 nm.

[0066] According to embodiments of this disclosure, the material of the tunneling barrier layer 4 includes MgO, Al2O3 or Mg-Zn-O, etc., and the thickness is 0.2 nanometers to 10 nanometers, preferably 1 nanometer to 2 nanometers.

[0067] According to embodiments of this disclosure, the material of the pinning layer 6 is an antiferromagnetic or artificial antiferromagnetic multilayer film, which includes an antiferromagnetic or artificial antiferromagnetic multilayer film composed of elements such as Co, Fe, Ru, W, Cr, Ta, Ir, and Mn.

[0068] According to embodiments of this disclosure, the material of substrate 1 includes: Al2O3, SiO2, Si3N4, MgO, Si, SiC, GaN, AlN, GaAs, quartz, or sapphire.

[0069] According to embodiments of this disclosure, the material of the adhesive layer 7 includes a metal, a metal compound, or a metal oxide, wherein the metal includes Ta, Ru, Cr, Cu, or Ti. The thickness of the adhesive layer is 0 nanometers to 100 nanometers, preferably 0.5 nanometers to 5 nanometers.

[0070] This disclosure also provides a magnetic track device, such as Figure 4 As shown, the magnetic track device includes:

[0071] Substrate 100;

[0072] The magnetic track 200, located above the substrate, is made of the aforementioned spin orbital moment superlattice material and is formed by stacking three layers of film—spin Hall layer, magnetic layer, and symmetry-breaking layer—as basic repeating units. It is used to provide a channel for the movement and transmission of logical information units such as magnetic domains and magnetic skyrmions.

[0073] An adhesive layer 300 is used to enhance the adhesion between the magnetic track 200 and the substrate 100.

[0074] The protective layer 400, located above the magnetic track 200, is used to protect the magnetic track 200 from hydrolysis, oxidation, or corrosion.

[0075] When a current pulse is applied to the aforementioned magnetic track device, it can drive the movement of nanomagnetic structures such as magnetic domains or magnetic skyrmions in the magnetic track, thereby enabling the development of memory and logic chips.

[0076] The embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. It should be noted that implementations not illustrated or described in the drawings or the main text of the specification are forms known to those skilled in the art and are not described in detail. Furthermore, the definitions of the various elements and methods described above are not limited to the specific structures, shapes, or methods mentioned in the embodiments, and those skilled in the art can easily modify or substitute them.

[0077] Based on the above description, those skilled in the art should have a clear understanding of the spin-orbit moment superlattice materials, magnetic track devices, and magnetic tunnel junction devices disclosed herein.

[0078] In summary, this disclosure provides a spin-orbit-moment superlattice material, a magnetic track device, and a magnetic tunnel junction device, which can simultaneously achieve high perpendicular magnetic anisotropy and huge perpendicular magnetic anisotropy. These devices can be driven by low current and are infinitely rewritable, meeting the requirements for high density, high reliability, and large-scale integration. Based on the aforementioned huge spin-orbit-moment superlattice material, magnetic tunnel junction device, or magnetic track device, memory, logic, and computing devices, as well as electronic chips that can be integrated into mobile phones, computers, smartwatches, or other wearable devices, can be developed.

[0079] It should also be noted that the above are different embodiments provided by this disclosure. These embodiments are used to illustrate the technical content of this disclosure and are not intended to limit the scope of protection of this disclosure. A feature of one embodiment can be applied to other embodiments through suitable modifications, substitutions, combinations, or separations.

[0080] It should be noted that, unless otherwise specified herein, having "a" element is not limited to having a single element, but may include one or more of the elements.

[0081] Furthermore, unless otherwise specified, the ordinal numbers such as "first," "second," etc., used herein are merely for distinguishing multiple elements with the same name and do not indicate any hierarchy, order of execution, or process sequence among them. A "first" element and a "second" element may appear together in the same component or separately in different components. The presence of an element with a higher ordinal number does not necessarily indicate the presence of another element with a lower ordinal number.

[0082] In this document, unless otherwise specified, the term "characteristic A" or "and / or" and "characteristic B" means that A exists alone, B exists alone, or A and B exist simultaneously; the term "characteristic A" and "and" or "and" and "and" and "characteristic B" means that A and B exist simultaneously; the terms "including", "containing", "having", and "containing" refer to, but are not limited to, these.

[0083] Furthermore, in this document, terms such as "up," "down," "left," "right," "front," "back," or "between" are used only to describe the relative positions of multiple elements and can be extended to include translation, rotation, or mirroring. Additionally, unless otherwise specified, the statement "one element is on another element" or similar statements do not necessarily indicate that the element is in contact with the other element.

[0084] Furthermore, unless specifically described or required to occur in a specific order, the order of the above steps is not limited to those listed above and can be varied or rearranged according to the desired design. Moreover, the above embodiments can be used in combination with each other or with other embodiments based on design and reliability considerations; that is, technical features from different embodiments can be freely combined to form more embodiments.

[0085] The specific embodiments described above further illustrate the purpose, technical solutions, and beneficial effects of this disclosure. It should be understood that the above descriptions are merely specific embodiments of this disclosure and are not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A spin-orbit moment superlattice material, comprising a plurality of sequentially stacked superlattice units to form a multi-period superlattice structure, wherein the spin-orbit moment efficiency of the superlattice material increases with the number of repeating periods, and each superlattice unit comprises: Spin Hall layers, exhibiting the spin Hall effect, are used to convert charge flow into high-density spin flow; A magnetic layer, located above the spin Hall layer, flips its magnetization direction under the influence of the spin current; as well as A symmetry-breaking layer, located above the magnetic layer, is used to break spatial inversion symmetry and enhance the magnetic anisotropy of the magnetic layer; The symmetry-broken layer is an insulating film, or A conductive thin film having a spin Hall angle opposite to that of the spin Hall layer; The optimal thickness of the spin Hall layer is twice the spin diffusion length of the spin Hall layer, and the thickness of the spin Hall layer is set to 0.2 nm to 15 nm; the thickness of the magnetic layer is 0.1 nm to 20 nm; and the thickness of the symmetry-breaking layer is 0.2 nm to 5 nm.

2. A magnetic track device, comprising: Substrate; A magnetic track, located on the substrate and composed of the superlattice material as described in claim 1, serves to provide a channel for the movement and transmission of logical information units such as magnetic domains and magnetic skyrmions; and A protective layer, located on the magnetic track, is used to prevent the magnetic track from being hydrolyzed, oxidized, or corroded.

3. The magnetic track device according to claim 2, further comprising: An adhesion layer, located between the substrate and the magnetic track, is used to enhance the adhesion between the magnetic track and the substrate.

4. A magnetic tunnel junction device, comprising: Substrate; An adhesion layer is disposed on the substrate; A magnetic free layer, disposed on the adhesive layer, is made of the spin orbital moment superlattice material as described in claim 1, and is used to pass an electric current to reverse the magnetization direction; The write electrode is electrically connected to the magnetic free layer and is used to provide the write current; Tunneling through the barrier layer, located on the magnetic free layer; A magnetic reference layer is located on the tunneling barrier layer and has perpendicular magnetic anisotropy and a defined magnetization direction. A pinning layer, located on the magnetic reference layer, is used to fix the magnetization direction of the magnetic reference layer; A protective layer, located on the pinning layer, is used to prevent device hydrolysis, oxidation, or corrosion; and A read electrode, disposed on the protective layer, is used to provide read current; When the magnetization direction of the magnetic free layer is parallel to the magnetization direction of the magnetic reference layer, the magnetic tunnel junction device is in a low-resistance state, enabling the writing of data "0" into the magnetic tunnel junction device; when the magnetization direction of the magnetic free layer is parallel to the magnetization direction of the magnetic reference layer, the magnetic tunnel junction device is in a low-resistance state, enabling the writing of data "1" into the magnetic tunnel junction device.

5. A magnetic tunnel junction device, comprising: Substrate; An adhesion layer is disposed on the substrate; A read electrode, disposed on the adhesive layer, is used to provide a read current; A pinning layer is located on the read electrode; A magnetic reference layer, located on the pinning layer, has perpendicular magnetic anisotropy and a defined magnetization direction, and the magnetization direction is fixed under the action of the pinning layer; Tunneling through the barrier layer, located on the magnetic reference layer; A magnetic free layer, disposed on the tunneling barrier layer, is made of the spin orbital moment superlattice material as described in claim 1, and is used to pass in current to reverse the magnetization direction; The write electrode is electrically connected to the magnetic free layer and is used to provide the write current; as well as A protective layer, located on the magnetic free layer, is used to prevent the device from hydrolysis, oxidation, or corrosion; When the magnetization direction of the magnetic free layer is parallel to the magnetization direction of the magnetic reference layer, the magnetic tunnel junction device is in a low-resistance state, enabling the writing of data "0" into the magnetic tunnel junction device; when the magnetization direction of the magnetic free layer is parallel to the magnetization direction of the magnetic reference layer, the magnetic tunnel junction device is in a low-resistance state, enabling the writing of data "1" into the magnetic tunnel junction device.

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