Exposure method and display panel

Abstract

The application provides an exposure method and a display panel, the method comprising: providing a photoetching machine, the photoetching machine comprising a carrier, a substrate is provided on the surface of the carrier; a light absorption layer is prepared on the side of the substrate far from the carrier; a metal layer is prepared on the side of the light absorption layer far from the carrier, the metal layer is provided with an opening; a photoresist layer is prepared on the side of the metal layer far from the carrier and the photoresist layer is subjected to exposure treatment; and the light passing through the opening and entering the light absorption layer is absorbed by the light absorption layer. The exposure method provided by the embodiment of the application can effectively weaken the reflected light energy by setting the light absorption layer to absorb the reflected light which reaches the photoresist after passing through the opening and then being reflected and superimposed multiple times through the metal layer, so as to reduce or eliminate the influence of the reflected light on the photoresist, further reduce or eliminate the color unevenness of the carrier, and improve the photoetching accuracy.

Description

Technical Field

[0001] The present invention relates to photolithography technology, and more particularly to an exposure method and a display panel. Background Technology

[0002] In the panel manufacturing industry, the surface material of the stage on which the substrate is placed in the lithography machine has a light reflection effect. Although the reflectivity is constantly decreasing after material optimization, a certain degree of reflected light will still exist.

[0003] When the lithography machine performs exposure work, such as Figure 1 As shown, the exposure light shines on the stage 101' through the patterned opening area 206' on the surface of the substrate 201'. The stage 101' has surface undulations such as vacuum adsorption holes 102', which cause reflected light to appear in various directions. The panel process has a metal layer 203', which causes the reflected light S' to be refracted back and forth between the metal layer 203' and the stage 101'. Some of the light shines back through the patterned opening area 206' on the surface and shines on the photoresist 204'. This part of the light is amplified by the refraction effect, which exceeds the reaction threshold of the photoresist 204', and thus a chemical reaction occurs with the photoresist 204'. As a result, the photoresist 204' at the corresponding position of the surface undulations of the stage 101' is removed in the subsequent development process. The pattern of the surface undulations of the stage 101' can be seen on the substrate 201', forming a stage color unevenness phenomenon. Summary of the Invention

[0004] This invention provides an exposure method and a display panel. By setting a light absorption layer to absorb light incident on the light absorption layer through an opening in the metal layer, the light incident on the light through the opening in the metal layer is prevented from entering the photoresist after multiple refractions between the stage and the metal layer, thereby reducing or eliminating the uneven color of the stage and improving the accuracy of photolithography.

[0005] In a first aspect, embodiments of the present invention provide an exposure method, the method comprising:

[0006] A lithography machine is provided, the lithography machine including a stage;

[0007] A substrate is provided on the surface of the stage;

[0008] A light-absorbing layer is prepared on the side of the substrate away from the stage;

[0009] A metal layer is prepared on the side of the light-absorbing layer away from the stage, and an opening is provided in the metal layer; the vertical projection of the light-absorbing layer on the plane of the substrate at least covers the vertical projection of the opening on the plane of the substrate.

[0010] A photoresist layer is prepared on the side of the metal layer away from the stage, and the photoresist layer is exposed; light incident on the light absorption layer through the opening is absorbed by the light absorption layer.

[0011] Optionally, along the first direction, the thickness of the light-absorbing layer is H1, where 5μm≤H1≤10μm; the first direction is perpendicular to the plane of the substrate.

[0012] Optionally, after forming the light-absorbing layer on the side of the substrate away from the stage, the method further includes:

[0013] An etching barrier layer is prepared on the side of the light-absorbing layer away from the stage;

[0014] A metal layer is fabricated on the side of the light-absorbing layer away from the stage, including:

[0015] A metal layer is prepared on the side of the etching barrier layer away from the stage.

[0016] Optionally, before fabricating the metal layer on the side of the light-absorbing layer away from the stage, the method further includes:

[0017] An active layer is prepared on the side of the substrate away from the stage;

[0018] An insulating layer is prepared on the side of the active layer away from the stage, the insulating layer being used to insulate the active layer from the metal layer; wherein the insulating layer and the etching barrier layer are prepared using the same material in the same process.

[0019] Optionally, along the first direction, the thickness of the light-absorbing layer is H2, where 1μm≤H2≤5μm; the first direction is perpendicular to the plane of the substrate.

[0020] Optionally, a light-absorbing layer is formed on the side of the substrate away from the stage, including:

[0021] A first polarizing layer is prepared on the side of the substrate away from the stage;

[0022] A second polarizing layer is fabricated on the side of the first polarizing layer away from the stage, and the polarization direction of the second polarizing layer is perpendicular to the polarization direction of the first polarizing layer. Secondly, this embodiment of the invention provides a display panel fabricated using the exposure method provided in the first aspect, the display panel comprising:

[0023] Substrate;

[0024] A light-absorbing layer located on one side of the substrate;

[0025] A metal layer located on the side of the light-absorbing layer away from the stage, the metal layer having an opening; the vertical projection of the light-absorbing layer on the plane of the substrate at least covers the vertical projection of the opening on the plane of the substrate; the light-absorbing layer is used to absorb light incident into the light-absorbing layer through the opening during the exposure process of the display panel.

[0026] Optionally, the display panel further includes an etching barrier layer located between the light-absorbing layer and the metal layer.

[0027] Optionally, the display panel further includes an active layer located on one side of the substrate and an insulating layer located on the side of the active layer away from the substrate, the insulating layer being used to insulate and isolate the active layer from the metal layer;

[0028] The insulating layer and the etching barrier layer are disposed in the same layer and are made of the same material.

[0029] Optionally, the light absorption layer includes a first polarizing layer and a second polarizing layer stacked together, wherein the second polarizing layer is located on the side of the first polarizing layer away from the substrate; and the polarization direction of the second polarizing layer is perpendicular to the polarization direction of the first polarizing layer.

[0030] This invention provides an exposure method comprising: providing a photolithography machine, the photolithography machine including a stage, providing a substrate on the surface of the stage, preparing a light-absorbing layer on the side of the substrate away from the stage, preparing a metal layer on the side of the light-absorbing layer away from the stage, the metal layer having an opening; preparing a photoresist layer on the side of the metal layer away from the stage and exposing the photoresist layer; and absorbing light incident on the light-absorbing layer through the opening. The exposure method provided by this invention, by setting a light-absorbing layer to absorb reflected light that reaches the substrate through the opening and then undergoes multiple reflections and superpositions by the metal layer before reaching the photoresist, can effectively reduce the energy of reflected light reflected into the photoresist, thereby reducing or eliminating the impact of reflected light on the photoresist, further reducing or eliminating stage color unevenness, and improving photolithography accuracy. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of a display panel in the prior art;

[0032] Figure 2 A schematic flowchart of an exposure method provided in an embodiment of the present invention;

[0033] Figures 3-8 To and Figure 2 A schematic diagram of the preparation process corresponding to the provided exposure method;

[0034] Figure 9A schematic flowchart of another exposure method provided in an embodiment of the present invention;

[0035] Figures 10-12 To and Figure 9 A schematic diagram of the preparation process corresponding to the provided exposure method;

[0036] Figure 13 This is a schematic diagram of the structure of a display panel provided in an embodiment of the present invention;

[0037] Figure 14 A schematic flowchart of another exposure method provided in an embodiment of the present invention;

[0038] Figures 15-17 To and Figure 13 A schematic diagram of the preparation process corresponding to the provided exposure method. Detailed Implementation

[0039] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0040] Figure 2 This is a schematic flowchart illustrating an exposure method according to an embodiment of the present invention. (Reference) Figure 2 The exposure method provided in this embodiment of the invention includes:

[0041] S101. Provides a lithography machine, which includes a stage.

[0042] like Figure 3 As shown in the figure, this embodiment of the invention provides a photolithography machine that can fabricate a desired display panel using photolithography. The photolithography machine includes a stage 101 for supporting the display panel to be fabricated during the photolithography process. A vacuum adsorption hole 102 is provided above the stage 101 for adsorbing the display panel to be exposed. Simultaneously, due to limitations in the fabrication process of the stage 101, the surface of the stage 101 has some undulating structures (not shown in the figure), such as metal particles, protrusions, or depressions.

[0043] S102, Provide a substrate on the stage surface.

[0044] like Figure 4As shown, a substrate 201 is placed on the surface of a stage 101. The substrate 201 may include a glass substrate, which is not specifically limited here. Typically, the surface of the stage 101 has surface undulations such as vacuum adsorption holes 102. The vacuum adsorption holes 102 are used to adsorb the substrate 201. However, the surface undulations such as the vacuum adsorption holes 102 also reflect the exposure light, causing uneven color on the stage and affecting the exposure accuracy.

[0045] S103. Prepare a light-absorbing layer on the side of the substrate away from the stage.

[0046] like Figure 5 As shown, further, a light-absorbing layer 202 is deposited, coated, or attached to the side of the substrate 201 away from the stage 101. The light-absorbing layer 202 includes a material that can absorb the light exposed by the lithography machine.

[0047] S104. Prepare a metal layer on the side of the light-absorbing layer away from the stage, and provide an opening in the metal layer.

[0048] The vertical projection of the light-absorbing layer onto the plane of the substrate at least covers the vertical projection of the opening onto the plane of the substrate.

[0049] like Figure 6 and Figure 7 As shown, after the light absorption layer 202 is fabricated, a metal layer 203 is fabricated on the side of the light absorption layer 202 away from the stage 101. The metal layer 203 can serve as the film layer for signal traces in the display panel, such as the film layer for scan lines or data lines; or, the metal layer 203 can also serve as the component structure in the display panel, such as the capacitor plate for storing capacitors or the film layer for the anode structure in the display panel. The specific function of the metal layer 203 is not limited in this embodiment of the invention. Furthermore, since the fabrication process of the display panel requires the fabrication of a fully formed metal layer, a patterning process is also required when forming the actual structure. Therefore, the metal layer 203 has an opening 206, which can be, for example, the gap between two adjacent scan lines or the gap between two adjacent data lines, etc. Based on the pre-defined distribution and size of the openings 206 in the metal layer 203, the vertical projection of the light-absorbing layer 202 onto the plane of the substrate 201 at least covers the vertical projection of the openings 206 onto the plane of the substrate 201. For example, Figure 6 The image shows the fabrication of the light-absorbing layer 202 as a whole. Figure 7 The diagram shows that the light-absorbing layer 202 is prepared only below the vertical opening 206.

[0050] S105. A photoresist layer is prepared on the side of the metal layer away from the stage and the photoresist layer is exposed; light incident on the light absorption layer through the opening is absorbed by the light absorption layer.

[0051] like Figure 8 As shown, a photoresist layer 204 is coated on the side of the metal layer 203 away from the stage 101, and the photoresist layer 204 is exposed. Exemplarily, in the actual display panel fabrication process, other film layers need to be fabricated on the metal layer 203 and patterned. Here, the photoresist layer 204 can be understood as the photoresist layer 204 used in the patterning process of other film layers on the metal layer 203. The photoresist layer 204 is exposed using a photomask, and the photomask pattern is reflected onto the photoresist layer 204. Then, the patterned photoresist is used to pattern other film layers, ensuring the normal fabrication of the display panel.

[0052] Furthermore, by pre-preparing the light absorption layer 202, when the lithography machine performs exposure, the exposure light S will irradiate the light absorption layer 202 through the opening 206 of the metal layer 203 on one side of the substrate 201. The exposure light S incident into the light absorption layer 202 through the opening 206 is absorbed by the light absorption layer 202, which can effectively reduce the reflected light energy, thereby reducing or eliminating the influence of reflected light on the photoresist layer, further reducing or eliminating the unevenness of the stage color, and improving the lithography accuracy.

[0053] In summary, the exposure method provided by the embodiments of the present invention first prepares a light absorption layer on the side of the substrate away from the stage before preparing the metal layer of the display panel, and then prepares a photoresist layer on the side of the metal layer away from the stage and exposes the photoresist layer. By setting the light absorption layer to absorb the reflected light that reaches the substrate through the opening and then reaches the photoresist after multiple reflections and superpositions by the metal layer, the reflected light energy into the photoresist can be effectively reduced, thereby reducing or eliminating the influence of reflected light on the photoresist, further reducing or eliminating the stage color unevenness phenomenon, and improving the photolithography accuracy.

[0054] Optional, see reference Figures 5-8 As shown, along the first direction Y, the thickness of the light absorption layer is H1, 5μm≤H1≤10μm; the first direction Y is perpendicular to the plane of the substrate.

[0055] For example, refer to Figures 5-8As shown, for example, the light absorption layer 202 includes black photoresist or black ink, wherein the OD value (Optical Density) of the light absorption layer 202 is greater than or equal to 3, which can effectively improve the light absorption efficiency of the exposure light S. The thickness H1 of the light absorption layer 202 is set to satisfy 5μm≤H1≤10μm. By reasonably setting the thickness of the light absorption layer 202, on the one hand, the reflected light of the exposure light S can be effectively absorbed; on the other hand, during photolithography of the metal layer 203, because the film thickness of the light absorption layer 202 is relatively large, it is possible to avoid etching through the light absorption layer 202, thus ensuring that the purpose of absorbing the exposure light can be achieved.

[0056] Figure 9 This is a schematic flowchart illustrating another exposure method provided in an embodiment of the present invention. Optionally, refer to... Figure 9 As shown, this embodiment of the invention also provides an exposure method, the method comprising:

[0057] S201. Provide a lithography machine, which includes a stage.

[0058] Continue to refer to Figure 3 As shown.

[0059] S202, Provide a substrate on the stage surface.

[0060] Continue to refer to Figure 4 As shown.

[0061] S203. Prepare a light-absorbing layer on the side of the substrate away from the stage.

[0062] Continue to refer to Figure 5 As shown.

[0063] S204. An etching barrier layer is prepared on the side of the light absorption layer away from the stage.

[0064] like Figure 10 As shown, after the light absorption layer 202 is prepared, in order to further protect the light absorption layer 202, an etching barrier layer 205 can be deposited on the side of the light absorption layer 202 away from the stage 201. The etching barrier layer 205 serves as a barrier layer for the light absorption layer 202, that is, the etching barrier layer 205 can serve as an etching sacrificial layer, which can prevent the loss of the light absorption layer 202 in the patterning process of the metal layer 203 and ensure that the light absorption layer 202 normally absorbs the light incident through the opening 206.

[0065] The etching barrier layer 205 is made of silicon nitride or silicon oxide. The thickness of the etching barrier layer 205 is further set to 0.1μm-2μm along the direction perpendicular to the plane of the substrate. By reasonably setting the material and thickness of the etching barrier layer 205, it can prevent the light absorption layer 202 from being etched during the patterning process of the metal layer 203, thus ensuring that the light absorption layer 202 is not damaged.

[0066] S205. Prepare a metal layer on the side of the etching barrier layer away from the stage, and provide an opening in the metal layer.

[0067] like Figure 11 As shown, after etching the barrier layer 205, a metal layer 203 is then fabricated on the side of the barrier layer 205 away from the stage 101. The metal layer 203 has an opening 206, and the fabrication process is similar to... Figure 6 same.

[0068] S206. A photoresist layer is prepared on the side of the metal layer away from the stage and the photoresist layer is exposed; light incident on the light absorption layer through the opening is absorbed by the light absorption layer.

[0069] like Figure 12 As shown, according to the method for preparing the metal layer and photoresist layer provided in the above embodiment, the metal layer 203 and the photoresist layer 204 are sequentially prepared on the side of the etch barrier layer 205 away from the substrate 201. When the lithography machine performs exposure, the exposure light S passes through the opening 206 of the metal layer 203 on the substrate 201 side and sequentially irradiates the etch barrier layer 205 and the light absorption layer 202. The exposure light S incident on the light absorption layer 202 through the opening 206 is absorbed by the light absorption layer 202, which can effectively reduce the reflected light energy, thereby reducing or eliminating the influence of reflected light on the photoresist layer, further reducing or eliminating the stage color unevenness phenomenon, and improving the lithography accuracy.

[0070] Optional, continue to refer to Figure 10-12 As shown, along the first direction Y, the thickness of the light absorption layer 202 is H2, 1μm≤H2≤5μm; the first direction Y is perpendicular to the plane where the substrate 201 is located.

[0071] For example, refer to Figure 10-12 As shown, when an etching barrier layer 205 is added to the side of the light absorption layer 202 away from the stage 201, the etching barrier layer 205 can ensure that the light absorption layer 202 is not damaged. Therefore, the thickness of the light absorption layer 202 can be set to be smaller. For example, the thickness H2 of the light absorption layer 202 can be set to satisfy 1μm≤H2≤5μm. This can effectively reduce the thickness of the display panel, making the display panel lighter and thinner.

[0072] Based on the above embodiments, optionally, before fabricating the metal layer on the side of the light-absorbing layer away from the stage, the method further includes:

[0073] An active layer is fabricated on the side of the substrate away from the stage;

[0074] An insulating layer is prepared on the side of the active layer away from the stage. The insulating layer is used to insulate and isolate the active layer from the metal layer. The insulating layer and the etching barrier layer are prepared using the same material in the same process.

[0075] For example, Figure 13 This is a schematic diagram of a display panel provided in an embodiment of the present invention. Figure 13 As shown, according to the film layer configuration of the display panel 200, an active layer 207 is prepared on the side of the substrate 201 away from the stage 101. The material of the active layer 207 can be at least one of single-crystal silicon, polycrystalline silicon, and oxide semiconductor materials, but is not limited thereto. An insulating layer 208 is prepared on the side of the active layer 207 away from the stage 101. The insulating layer 208 can be a silicon oxide or silicon nitride insulating layer. 208 is used to insulate and isolate the active layer 207 from the metal layer 203. For example, when the metal layer 203 is a gate metal layer, the insulating layer 208 can be a gate insulating layer. The insulating layer 208 and the etch stop layer 205 can be prepared using the same material in the same process. This process design can reduce the fabrication process, reduce the difficulty of manufacturing the display panel, and improve production efficiency.

[0076] It should be noted that, Figure 13 This example only considers the sequential fabrication of a light-absorbing layer, an active layer, a gate insulating layer, and a gate metal layer on one side of a substrate. The light-absorbing layer 202 can also be located between the active layer 207 and the insulating layer 208, as long as the light-absorbing layer 202 is fabricated before the metal layer 203, so that the light-absorbing layer 202 can absorb reflected light and reduce the energy of the reflected light.

[0077] Figure 14 This is a schematic flowchart illustrating another exposure method provided in an embodiment of the present invention. Optionally, refer to... Figure 14 As shown, this embodiment of the invention also provides an exposure method, the method comprising:

[0078] S301. Provides a lithography machine, which includes a stage.

[0079] Continue to refer to Figure 3 As shown.

[0080] S302, Provide a substrate on the stage surface.

[0081] Continue to refer to Figure 4 As shown.

[0082] S303. Prepare a first polarizing layer on the side of the substrate away from the stage.

[0083] Continue to refer to Figure 5 As shown.

[0084] S304. Prepare a second polarizing layer on the side of the first polarizing layer away from the stage.

[0085] The polarization direction of the second polarizing layer is perpendicular to the polarization direction of the first polarizing layer.

[0086] For example, such as Figure 15 As shown, a first polarizing layer 2021 can be attached to the side of the substrate 201 away from the stage 101, and a second polarizing layer 2022 can be attached to the side of the first polarizing layer 2021 away from the stage 201. The polarization direction of the second polarizing layer 2022 is set to be perpendicular to the polarization direction of the first polarizing layer 2021, that is, the phase difference is 90°. This makes it so that when the exposure light S passes through the first polarizing layer 2021 and the second polarizing layer 2022, it cannot pass through the polarizing layer. Even if a small amount of light is incident, its reflected light will be blocked by the polarizing layer, thereby greatly reducing the reflected light energy, achieving the purpose of reducing or eliminating the color unevenness of the stage 201, and improving the photolithography accuracy.

[0087] Among them, the first polarizer layer 2021 and the second polarizer 2022 can directly adopt polarizers. Along the direction perpendicular to the display panel, the thickness H3 of the first polarizer layer 2021 and the second polarizer 2022 ranges from 0.1μm to 10μm. By adjusting the thickness of the polarizer layer, the thickness of the display panel can be taken into account while eliminating light.

[0088] S305. Prepare a metal layer on the side of the second polarizing layer away from the stage, and provide an opening in the metal layer.

[0089] S306. A photoresist layer is prepared on the side of the metal layer away from the stage and the photoresist layer is exposed; the light incident on the second polarizing layer and the first polarizing layer through the opening is absorbed by the second polarizing layer and the first polarizing layer.

[0090] Combination Figure 6 , Figure 8 and Figure 11 As shown, the method for preparing the metal layer 203 and the photoresist layer 204 according to the above embodiment is as follows: Figure 16As shown, a metal layer 203 and a photoresist layer 204 are sequentially fabricated on the side of the second polarizing layer 2022 away from the substrate 201. When the lithography machine performs exposure, the exposure light S passes through the opening 206 of the metal layer 203 on the substrate 201 side and sequentially irradiates the second polarizing layer 2022 and the first polarizing layer 2021. The exposure light S incident on the second polarizing layer 2022 and the first polarizing layer 2021 through the opening 206 is absorbed by the polarizing layer, which can effectively reduce the energy of the reflected light. Even if there is residual exposure light S reflected and superimposed on the photoresist layer multiple times, the energy is relatively weak and does not reach the threshold of the photoresist layer. This reduces or eliminates the influence of reflected light on the photoresist layer, further reduces or eliminates the stage color unevenness, and improves the lithography accuracy.

[0091] Optionally, before fabricating the metal layer on the side of the second polarizing layer away from the stage, the method further includes: fabricating an etching barrier layer on the side of the second polarizing layer away from the first polarizing layer.

[0092] For example, in combination Figure 15 and Figure 17 As shown, to prevent the first polarizing layer 2021 and the second polarizing layer 2022 from being etched through by the exposed light S during photolithography, after the second polarizing layer 2022 is prepared, an etching barrier layer 205 is prepared on the side of the second polarizing layer 2022 away from the first polarizing layer 2021. Then, a metal layer 203 is prepared on the side of the second polarizing layer 2022 away from the stage 101. A photoresist layer 204 is prepared on the side of the metal layer 203 away from the second polarizing layer 2022. The etching barrier layer 205 is set as a barrier layer for the light absorption layer 202, that is, the etching barrier layer 205 can be used as an etching sacrificial layer, which can prevent the second polarizing layer 2022 and the first polarizing layer 2021 from being etched during the etching process of the metal layer 203, and ensure that the polarizing layer normally absorbs the light incident through the opening 206.

[0093] Based on the same inventive concept, this invention also provides a display panel, prepared using any of the exposure methods provided in the above embodiments, and continues to refer to... Figure 8 The display panel 200 includes: a substrate 201; a light-absorbing layer 202 located on one side of the substrate 201; a metal layer 203 located on the side of the light-absorbing layer 202 away from the stage 101, and an opening 206 is provided in the metal layer 203; the light-absorbing layer 202 is used to absorb light incident into the light-absorbing layer 202 through the opening 206 during the exposure process of the display panel 200.

[0094] For example, such as Figure 8As shown, the display panel 200 provided in the embodiment includes: a substrate 201, a light-absorbing layer 202 located on one side of the substrate 201, and a metal layer 203 located on the side of the light-absorbing layer 202 away from the stage 101. An opening 206 is provided in the metal layer 203, which has a specific effect, as described above and will not be repeated here. The display panel 200 may include an organic light-emitting diode (OLED) display panel or a micro light-emitting diode (Micro LED) display panel, etc. The substrate 201 can be flexible or rigid; no specific limitation is made here.

[0095] In summary, the display panel provided in this embodiment of the invention, by setting a light absorption layer on one side of the substrate and a metal layer on the other side, when the photoresist layer is exposed, the light absorption layer absorbs the reflected light from the stage that passes through the opening of the metal layer to the substrate and then is reflected and superimposed multiple times by the metal layer before reaching the photoresist. This effectively reduces the energy of the reflected light reflected into the photoresist, thereby reducing or eliminating the influence of reflected light on the photoresist, further reducing or eliminating stage color unevenness, and improving the photolithography accuracy.

[0096] Optionally, continuing with reference to 12, the display panel 100 also includes an etch barrier layer 205 located between the light-absorbing layer 202 and the metal layer 203.

[0097] For example, continue to refer to Figure 12 An etching barrier layer 205 is provided between the light absorption layer 202 and the metal layer 203 to prevent the light absorption layer 202 from being etched during the patterning process of the metal layer 203.

[0098] Optionally, continuing to refer to Figure 13, the display panel 100 further includes an active layer 207 located on one side of the substrate 201 and an insulating layer 208 located on the side of the active layer 207 away from the substrate 201. The insulating layer 208 is used to insulate and isolate the active layer 207 from the metal layer 203. The insulating layer 208 and the etching barrier layer 205 are disposed in the same layer and are made of the same material.

[0099] For example, refer to Figure 13As shown, according to the film layer configuration of the display panel 200, the film layer structure of the display panel 100 includes a substrate 201 and a light absorption layer 202, a source layer 207, an insulating layer 208 (etch barrier layer 205), a metal layer 203, and a photoresist layer 204 sequentially located on one side of the substrate 201. The insulating layer 208 and the etch barrier layer 205 are prepared using the same material in the same process. This process design can reduce the manufacturing process, reduce the manufacturing difficulty of the display panel, and improve production efficiency.

[0100] Optional, refer to Figure 16 and Figure 17 As shown, the light absorption layer 202 includes a first polarizing layer 2021 and a second polarizing layer 2022 stacked together. The second polarizing layer 2022 is located on the side of the first polarizing layer 2021 away from the substrate 201. The polarization direction of the second polarizing layer 2022 is perpendicular to the polarization direction of the first polarizing layer 2021.

[0101] For example, refer to Figure 16 and Figure 17 As shown, by attaching or coating a first polarizing film layer 2021 and a second polarizing layer 2022 on the side of the substrate 201 away from the stage 101, and utilizing the 90° phase difference between the second polarizing layer 2022 and the first polarizing layer 2021, when the exposure light S passes through the first polarizing film layer 2021 and the second polarizing layer 2022, it cannot pass through the polarizing layer. Even if a small amount of light is incident, its reflected light will be blocked by the polarizing layer, thereby greatly reducing the reflected light energy and achieving the purpose of reducing or eliminating the color unevenness of the stage 201.

[0102] The display panel provided in this embodiment of the invention has a light absorption layer on one side of the substrate. The light absorption layer can be black photoresist, black ink, polarizing layer, etc. The light absorption layer absorbs the reflected light that reaches the substrate through the opening of the metal layer on the carrier and then reaches the photoresist after multiple reflections and superpositions by the metal layer. This can effectively reduce the energy of the reflected light reflected into the photoresist, thereby reducing or eliminating the influence of reflected light on the photoresist and further reducing or eliminating the uneven color of the carrier.

[0103] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, combinations, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. An exposure method characterized by, Comprising: Providing a lithography machine, the lithography machine comprising a stage; Providing a substrate on a surface of the stage; Preparing a light absorption layer on a side of the substrate away from the stage; The thickness of the light absorption layer is H2 in a first direction, 1µm≤H2≤5µm; the first direction is perpendicular to the plane where the substrate is located; Preparing an etching barrier layer on a side of the light absorption layer away from the stage; Preparing a metal layer on a side of the light absorption layer away from the stage, comprising: Preparing a metal layer on a side of the etching barrier layer away from the stage; wherein the metal layer is provided with an opening; the vertical projection of the light absorption layer on the plane where the substrate is located covers at least the vertical projection of the opening on the plane where the substrate is located; Preparing a photoresist layer on a side of the metal layer away from the stage and performing exposure treatment on the photoresist layer; the light rays incident into the light absorption layer through the opening are absorbed by the light absorption layer.

2. The exposure method according to claim 1, wherein Before preparing the metal layer on a side of the light absorption layer away from the stage, further comprising: Preparing an active layer on a side of the substrate away from the stage; Preparing an insulating layer on a side of the active layer away from the stage, the insulating layer being used to insulate and isolate the active layer and the metal layer; wherein the insulating layer and the etching barrier layer are prepared in the same process using the same material.

3. The exposure method according to claim 1, wherein Preparing a light absorption layer on a side of the substrate away from the stage, comprising: Preparing a first polarizing layer on a side of the substrate away from the stage; Preparing a second polarizing layer on a side of the first polarizing layer away from the stage, the polarization direction of the second polarizing layer being perpendicular to the polarization direction of the first polarizing layer.

4. A display panel prepared by the exposure method according to any one of claims 1 to 3, characterized in that, The display panel comprises: A substrate; A light absorption layer located on a side of the substrate; A metal layer located on a side of the light absorption layer away from the stage, the metal layer being provided with an opening; the vertical projection of the light absorption layer on the plane where the substrate is located covers at least the vertical projection of the opening on the plane where the substrate is located; the light absorption layer is used to absorb light rays incident into the light absorption layer through the opening in the exposure process of the display panel; An etching barrier layer located between the light absorption layer and the metal layer.

5. The display panel of claim 4, wherein, The display panel further comprises an active layer located on a side of the substrate and an insulating layer located on a side of the active layer away from the substrate, the insulating layer being used to insulate and isolate the active layer and the metal layer; The insulating layer and the etching barrier layer are provided in the same layer and are made of the same material.

6. The display panel of claim 4, wherein, The light absorption layer comprises a first polarizing layer and a second polarizing layer provided in a stack, the second polarizing layer being located on a side of the first polarizing layer away from the substrate; the polarization direction of the second polarizing layer is perpendicular to the polarization direction of the first polarizing layer.

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