Semiconductor device and inverter device
By creating a protrusion at the joint between the housing frame and the heat sink, a barrier is formed, which solves the problem of adhesive leakage and improves the yield of semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2022-07-01
- Publication Date
- 2026-06-26
Smart Images
Figure CN115602635B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to semiconductor devices and inverter devices that bond a housing frame to a heat sink using an adhesive. Background Technology
[0002] In the case of semiconductor devices where encapsulation material is filled within the housing, the housing frame and the heat sink are bonded together using an adhesive. Furthermore, the adhesive also functions as a sealing material to prevent moisture and other contaminants from entering the joint between the housing frame and the heat sink. Therefore, as a prior art method ensuring the amount of adhesive is sufficient to achieve its function as a sealing material, a structure is disclosed in which at least one of the lower surface of the housing frame and the outer periphery of the upper surface of the heat sink is provided with a stepped portion.
[0003] Patent Document 1: International Publication No. 2018 / 055667
[0004] The following issues exist in the prior art: sometimes the adhesive leaks into the semiconductor device, and the thermal expansion of the leaked adhesive may cause cracks in the insulating substrate, resulting in a decrease in yield. Summary of the Invention
[0005] The present invention was proposed to solve the above-mentioned problems, and its purpose is to provide a semiconductor device and an inverter device that suppress the decline in yield by preventing the adhesive from leaking into the inside of the semiconductor device.
[0006] The semiconductor device and inverter device of the present invention include: a heat sink; a wiring substrate disposed on the heat sink; a semiconductor chip disposed on the wiring substrate; a housing frame disposed on the heat sink in a manner that surrounds the wiring substrate and the semiconductor chip; an adhesive for bonding a lower surface joint portion of the housing frame to an upper surface joint portion of the heat sink; an encapsulation material filled within the housing frame to cover the wiring substrate and the semiconductor chip; and a protrusion that separates the adhesive from the encapsulation material at the lower surface joint portion of the housing frame or the upper surface joint portion of the heat sink.
[0007] The effects of the invention
[0008] According to the present invention, by providing a protrusion at the lower surface joint of the housing frame or the upper surface joint of the heat sink, leakage of adhesive into the semiconductor device can be suppressed. Thus, a semiconductor device and an inverter device with reduced yield can be obtained. Attached Figure Description
[0009] Figure 1 This is a cross-sectional view of a semiconductor device according to Embodiment 1 of the present invention.
[0010] Figure 2This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 1 of the present invention.
[0011] Figure 3 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 2 of the present invention.
[0012] Figure 4 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to a variation of Embodiment 2 of the present invention.
[0013] Figure 5 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to a variation of Embodiment 2 of the present invention.
[0014] Figure 6 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to a variation of Embodiment 2 of the present invention, Example 3.
[0015] Figure 7 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 3 of the present invention.
[0016] Figure 8 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 4 of the present invention.
[0017] Figure 9 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 5 of the present invention.
[0018] Figure 10 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 6 of the present invention.
[0019] Figure 11 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 7 of the present invention.
[0020] Figure 12 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 8 of the present invention.
[0021] Figure 13 This is an enlarged cross-sectional view of the joint between the heat sink and the housing frame of the semiconductor device according to Embodiment 9 of the present invention.
[0022] Figure 14This is a top view of the semiconductor device according to Embodiment 9 of the present invention.
[0023] Figure 15 This is a cross-sectional view showing the inverter device according to Embodiment 10 of the present invention. Detailed Implementation
[0024] Hereinafter, with reference to the accompanying drawings, the semiconductor device and inverter device according to embodiments of the present invention will be described. Structural elements with the same or equivalent functions will be labeled with the same reference numerals, and repeated descriptions will sometimes be omitted.
[0025] Implementation Method 1
[0026] Figure 1 This is a cross-sectional view showing the semiconductor device 1 according to Embodiment 1. For example... Figure 1 As shown, a wiring board 3 is disposed on a heat sink 2. The heat sink 2 is made of metals such as Cu and Al or composite materials such as AlSiC. The wiring board 3 is configured such that a lower surface electrode 5 is disposed on the lower surface of an insulating substrate 4, and an upper surface electrode 6 and an upper surface electrode 7 are disposed on the upper surface of the insulating substrate 4. The insulating substrate 4 is, for example, a ceramic substrate. In addition, the lower surface electrode 5 is bonded to the heat sink 2 by solder 8a, and a semiconductor chip 9 is disposed on the upper surface electrode 6 by solder 8b. The semiconductor chip 9 is, for example, an insulated gate bipolar transistor (IGBT), a field-effect transistor (MOSFET), or a diode. In addition, the semiconductor chip 9 is connected to the upper surface electrode 7 by a wire 10. A housing frame 11 is disposed on the heat sink 2 to surround the wiring board 3 and the semiconductor chip 9. The housing frame 11 is made of engineering plastics such as PPS (Poly Phenylene Sulfide), PBT (Polybutylene Terephthalate), or PET+PBT (Polyethylene Terephthalate+Polybutylene Terephthalate). The upper surface joint 12 of the heat sink 2 is joined to the lower surface joint 13 of the opposite housing frame 11 by an adhesive 14. The adhesive 14 is a silicone or epoxy-based material. Furthermore, to ensure insulation, an encapsulation material 15 is filled inside the housing frame 11, covering the wiring substrate 3, semiconductor chip 9, and wires 10. The encapsulation material 15 is, for example, silicone gel or epoxy resin. A cover 17 is provided at the opening 16 of the housing frame 11 to prevent foreign matter from entering. The cover 17 is, for example, an engineering plastic such as PPS, PBT, or PET+PBT.
[0027] Figure 2 yes Figure 1 An enlarged view of the joint 18 between the heat sink 2 and the housing frame 11, enclosed by dashed lines. Figure 2 As shown, regarding the heat sink 2 and the housing frame 11, the opposing portions, namely the upper surface joint portion 12 of the heat sink 2 and the lower surface joint portion 13 of the housing frame 11, are bonded together by adhesive 14. A protrusion 19a (first protrusion) is provided on the lower surface joint portion 13 of the housing frame 11, surrounding the wiring substrate 3. When the heat sink 2 is bonded to the housing frame 11, the protrusion 19a contacts the upper surface joint portion 12 of the heat sink 2, surrounding the wiring substrate 3. Furthermore, regarding the semiconductor device 1, if the direction from the outer edge 23 of the heat sink towards the wiring substrate 3 is defined as the inward direction, and the direction from the wiring substrate 3 towards the outer edge 23 of the heat sink is defined as the outward direction, then encapsulation material 15 is filled inside the protrusion 19a, with the protrusion 19a as the boundary, and adhesive 14 is applied to the outer side of the protrusion 19a. Furthermore, in Figure 2 For simplicity, the protrusion 19a is shown as a protrusion with a steeply rising cross-sectional shape, but it is not limited to this. For example, it may also be a cross-sectional shape with a gentle rise or a shape that makes the contact surface with the upper surface joint 12 of the heat sink 2 a wider plane.
[0028] In the semiconductor device 1 configured in this way, when the heat sink 2 is joined to the housing frame 11, an adhesive 14 is applied to the outer side of the protrusion 19a. That is, the protrusion 19a becomes a structure that separates the adhesive 14 from the encapsulation material 15. For the adhesive 14, the protrusion 19a acts as a barrier in the inward direction. Therefore, it is possible to prevent the adhesive 14 from leaking into the inner part of the encapsulation material 15 that is filled with the adhesive 14.
[0029] As described above, by providing a protrusion 19a at the lower surface joint 13 of the housing frame 11, it is possible to prevent the adhesive 14 from leaking to the inside. As a result, problems caused by the adhesive 14 leaking to the inside can be prevented, thereby suppressing the decrease in yield caused by the adhesive 14 leaking to the inside.
[0030] Implementation Method 2
[0031] Figure 3 This is an enlarged cross-sectional view of the joint 18 involved in Embodiment 2. For example... Figure 3 As shown, adhesive 14 is applied to the area surrounded by protrusions 19a and 20b (the second protrusion), wherein protrusion 19a is provided at the lower surface joint 13 of the housing frame 11, and protrusion 20b is located further outward than protrusion 19a and is provided at the upper surface joint 12 of the heat sink 2.
[0032] In this semiconductor device configuration, when joining the heat sink 2 to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 20b, thereby joining the heat sink 2 to the housing frame 11. The adhesive 14 does not penetrate into the inner side of the semiconductor device. After joining, protrusion 19a acts as a barrier, thus preventing adhesive 14 from leaking into the inner side of the semiconductor device. Furthermore, in Embodiment 1, only one protrusion 19a is provided, but it is also possible to... Figure 3 The diagram shows multiple protrusions 19a, which allows the adhesive 14 to remain in the area surrounded by the protrusions 19a and 20b.
[0033] Therefore, in addition to the same effect as in Embodiment 1, in Embodiment 2, the amount of adhesive 14 can be ensured in the area surrounded by protrusions 19a and 20b, thus also achieving a sealing effect that prevents moisture and the like from intruding into the inside of the semiconductor device.
[0034] Variation 1 of Implementation Method 2
[0035] Figure 4 This is an enlarged cross-sectional view of the joint 18 involved in Variation 1 of Embodiment 2. Variation 1 of Embodiment 2 involves a structure in which a protrusion 19a provided on the lower surface joint 13 of the housing frame 11 in Embodiment 2 is provided on the upper surface joint 12 of the heat sink 2, and a protrusion 20b provided on the upper surface joint 12 of the heat sink 2 is provided on the lower surface joint 13 of the housing frame 11. Figure 4 Adhesive 14 is applied to the area surrounded by the protrusion 19b (second protrusion) of the lower surface joint 13 of the housing frame 11 and the protrusion 20a (first protrusion) of the upper surface joint 12 of the heat sink 2.
[0036] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19b and 20a. This ensures the heat sink 2 is joined to the housing frame 11 without the adhesive 14 penetrating into the interior of the semiconductor device. After joining, protrusions 20a act as a barrier, preventing adhesive 14 from leaking into the interior of the semiconductor device. Furthermore, similar to Embodiment 2, adhesive 14 can be retained in the area surrounded by protrusions 19b and 20a.
[0037] Therefore, the same effect as in Implementation Method 2 can be obtained.
[0038] Variation 2 of Implementation Method 2
[0039] Figure 5This is an enlarged cross-sectional view of the joint 18 involved in Variation 2 of Embodiment 2. Variation 2 of Embodiment 2 is a structure in which the two protrusions, protrusions 19a and 20b, from Embodiment 2 are provided on the lower surface of the housing frame 11 joint 13, as shown below. Figure 5 Adhesive 14 is applied to the area surrounded by protrusions 19a (first protrusion) and 19b (second protrusion) of the joint portion 13 on the lower surface of the housing frame 11.
[0040] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 19b, thereby ensuring the bonding of the heat sink 2 and the housing frame 11. The adhesive 14 does not penetrate into the interior of the semiconductor device. After bonding, protrusions 19a act as a barrier, preventing adhesive 14 from leaking into the interior of the semiconductor device. Furthermore, similar to Embodiment 2, adhesive 14 can be retained in the area surrounded by protrusions 19a and 19b. Even if the bonding position between the heat sink 2 and the housing frame 11 shifts, the spacing between protrusions 19a and 19b remains unchanged, thus ensuring the amount of adhesive is maintained regardless of any shift in the bonding position between the heat sink 2 and the housing frame 11.
[0041] Therefore, the same effect as in embodiment 2 can be obtained without the offset of the joint position between the heat sink 2 and the housing frame 11.
[0042] Variation 3 of Implementation Method 2
[0043] Figure 6 This is an enlarged cross-sectional view of the joint 18 involved in Variation 3 of Embodiment 2. Variation 3 of Embodiment 2 is a structure in which the two protrusions, protrusions 19a and 20b, from Embodiment 2 are provided on the upper surface of the heat sink 2 at the joint 12, as shown below. Figure 6 Adhesive 14 is applied to the area surrounded by the protrusions 20a (first protrusion) and 20b (second protrusion) of the joint portion 12 on the upper surface of the heat sink 2.
[0044] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 20a and 20b, thereby joining the heat sink 2 to the housing frame 11. The adhesive 14 does not penetrate into the inner side of the semiconductor device. After joining, protrusions 20a act as a barrier, thus preventing adhesive 14 from leaking into the inner side of the semiconductor device. Furthermore, similar to Embodiment 2, adhesive 14 can be retained in the area surrounded by protrusions 20a and 20b. Even if the joining position between the heat sink 2 and the housing frame 11 shifts, the spacing between protrusions 20a and 20b remains unchanged. Therefore, regardless of whether there is a shift in the joining position between the heat sink 2 and the housing frame 11, the amount of adhesive can be ensured.
[0045] Therefore, the same effect as in embodiment 2 can be obtained without the offset of the joint position between the heat sink 2 and the housing frame 11.
[0046] Implementation Method 3
[0047] Figure 7 This is an enlarged cross-sectional view of the joint 18 involved in Embodiment 3. Embodiment 3 has a structure in which a recess is provided at a position opposite to the two protrusions 19a and 20b in Embodiment 2, such as... Figure 7 As shown, a protrusion 19a and a recess 21b are provided on the lower surface joint portion 13 of the housing frame 11, and a protrusion 20b and a recess 22a are provided on the upper surface joint portion 12 of the heat sink 2. The protrusions 19a, 21b, 20b, and 22a are positioned such that, when the heat sink 2 is joined to the housing frame 11, the protrusion 19a (first protrusion) engages with the recess 22a (first recess), and the protrusion 20b (second protrusion) engages with the recess 21b (second recess). Furthermore, adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b.
[0048] In this semiconductor device configuration, when joining the heat sink 2 to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 20b. This prevents the adhesive 14 from penetrating into the interior of the semiconductor device. After joining, protrusion 19a acts as a barrier, thus preventing the adhesive 14 from leaking into the interior of the semiconductor device. Furthermore, similar to Embodiment 2, the adhesive 14 can be retained in the area surrounded by protrusions 19a and 20b. Moreover, since protrusion 19a engages with recess 22a and protrusion 20b engages with recess 21b, misalignment during joining of the heat sink 2 and housing frame 11 can be prevented.
[0049] Therefore, in addition to the same effect as in Embodiment 2, Embodiment 3 can prevent misalignment during the joining of the heat sink 2 and the housing frame 11, thus suppressing the decrease in yield associated with misalignment.
[0050] Implementation Method 4
[0051] Figure 8 This is an enlarged cross-sectional view of the joint 18 involved in Embodiment 4. Embodiment 4 is a structure in which the difference between the depth of the recess and the height of the fitted protrusion in Embodiment 3 is made larger, such as... Figure 8 As shown, protrusions 19a and 19b are provided on the lower surface joint portion 13 of the housing frame 11, and recesses 22a (first recess) and 22b (second recess) are provided on the upper surface joint portion 12 of the heat sink 2. The protrusions 19a, 19b, 22a, and 22b are positioned at locations where the protrusions 19a and 22a engage with each other when the heat sink 2 is joined to the housing frame 11. Furthermore, the depth of the recesses 22a is shallower than the height of the protrusions 19a, and the depth of the recesses 22b is shallower than the height of the protrusions 19b. Adhesive 14 is applied to the area surrounded by the protrusions 19a and 19b.
[0052] In this semiconductor device configuration, when joining the heat sink 2 to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 19b, thereby joining the heat sink 2 to the housing frame 11. The adhesive 14 does not penetrate into the inner side of the semiconductor device. After joining, protrusions 19a act as a barrier, preventing adhesive 14 from leaking into the inner side of the semiconductor device. Furthermore, since the depth of recesses 22a and 22b is shallower than the height of protrusions 19a and 19b, more adhesive 14 can be retained in the area surrounded by protrusions 19a and 19b compared to Embodiment 3. Moreover, since protrusions 19a and 22a fit together, and protrusions 19b and 22b fit together, misalignment during joining of the heat sink 2 to the housing frame 11 can be prevented.
[0053] Therefore, in addition to the same effect as in Embodiment 3, in Embodiment 4, the amount of adhesive 14 can be ensured in the area surrounded by protrusions 19a and 19b, thus also achieving a sealing effect that prevents moisture and the like from intruding into the inside of the semiconductor device.
[0054] Implementation Method 5
[0055] Figure 9This is an enlarged cross-sectional view of the joint 18 involved in Embodiment 5. Embodiment 5 is a structure in Embodiment 4 in which adhesive 14 is applied to the area between the protrusion 19b and the outer edge 23 of the heat sink, as shown below. Figure 9 As shown, a protrusion 19a and a recess 21b are provided on the lower surface joint portion 13 of the housing frame 11, and a protrusion 20b and a recess 22a are provided on the upper surface joint portion 12 of the heat sink 2. The protrusions 19a, 21b, 20b, and 22a are positioned at locations where the protrusion 19a engages with the recess 22a and the protrusion 20b engages with the recess 21b when the heat sink 2 is joined to the housing frame 11. The depth of the recess 22a is shallower than the height of the protrusion 19a, and the depth of the recess 21b is shallower than the height of the protrusion 20b. Furthermore, adhesive 14 is not applied to the area surrounded by the protrusions 19a and 20b, but adhesive 14 is applied to the area between the protrusion 20b of the upper surface joint portion 12 of the heat sink 2 and the outer edge portion 23 of the heat sink 2.
[0056] In this semiconductor device configuration, when joining the heat sink 2 to the housing frame 11, adhesive 14 is applied to the area between the protrusion 20b and the outer edge 23 of the heat sink, thereby joining the heat sink 2 to the housing frame 11. The adhesive 14 does not penetrate into the inner side of the semiconductor device. After joining, the protrusions 19a and 20b act as a barrier, thus preventing the adhesive 14 from leaking into the inner side of the semiconductor device. Furthermore, the depths of the recesses 22a and 21b are shallower than the heights of the protrusions 19a and 20b, allowing the adhesive 14 to remain in the area between the protrusion 20b and the outer edge 23 of the heat sink. Moreover, since the protrusions 19a and 22a fit together, and the protrusions 20b and 21b fit together, misalignment during joining of the heat sink 2 to the housing frame 11 can be prevented.
[0057] Furthermore, even if adhesive 14 leaks from the gap between the protrusion 20b and the recess 21b due to processing fluctuations during manufacturing, the leakage of adhesive 14 is prevented in the area surrounded by the protrusion 19a and the protrusion 20b. Therefore, it is possible to prevent adhesive 14 from leaking into the inside of the protrusion 19a filled with encapsulation material 15.
[0058] Therefore, in addition to the same effect as in embodiment 4, embodiment 5 can also achieve the effect of suppressing the decline in yield without reducing the design tolerance.
[0059] Implementation Method 6
[0060] Figure 10This is an enlarged cross-sectional view of the joint 18 involved in Embodiment 5. Embodiment 6, similar to Embodiment 5, achieves a structure by providing three or more protrusions, thereby ensuring that the adhesive 14 is not applied to the area adjacent to the region filled with the encapsulating material 15. Figure 10 As shown, protrusions 19a, 19b, and 19c (third protrusions) are provided on the lower surface joint portion 13 of the housing frame 11, and recesses 22a, 22b, and 22c (third recesses) are provided on the upper surface joint portion 12 of the heat sink 2. The protrusions 19a, 19b, 19c, 22a, 22b, and 22c are positioned at locations where, when the heat sink 2 is joined to the housing frame 11, protrusion 19a engages with recess 22a, protrusion 19b engages with recess 22b, and protrusion 19c engages with recess 22c. Furthermore, the depth of recess 22a is shallower than the height of protrusion 19a, the depth of recess 22b is shallower than the height of protrusion 19b, and the depth of recess 22c is shallower than the height of protrusion 19c. Additionally, adhesive 14 is applied to the area surrounded by protrusions 19b and 19c.
[0061] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19b and 19c, thereby joining the heat sink 2 to the housing frame 11. The adhesive 14 does not penetrate into the inner side of the semiconductor device. After joining, protrusions 19a and 19b act as a barrier, thus preventing adhesive 14 from leaking into the inner side of protrusions 19a filled with encapsulation material 15. Furthermore, since the depth of recesses 22a, 22b, and 22c is shallower than the height of protrusions 19a, 19b, and 19c, the adhesive 14 is more likely to remain in the area surrounded by protrusions 19b and 19c compared to Embodiment 3. Furthermore, since the protrusion 19a fits into the recess 22a, the protrusion 19b fits into the recess 22b, and the protrusion 19c fits into the recess 22c, misalignment during the joint between the heat sink 2 and the housing frame 11 can be prevented.
[0062] Furthermore, even if adhesive 14 leaks from the gap between the protrusion 19b and the recess 22b due to processing fluctuations during manufacturing, the leakage of adhesive 14 is prevented in the area surrounded by the protrusion 19a and the protrusion 19b. Therefore, it is possible to prevent adhesive 14 from leaking into the inside of the protrusion 19a filled with encapsulation material 15.
[0063] Therefore, the same effect as in embodiment 5 can be obtained.
[0064] Implementation Method 7
[0065] Figure 11This is an enlarged cross-sectional view of the joint 18 according to Embodiment 7. Embodiment 7 has a structure in which the protrusion 24 is provided with a through hole 25 for releasing the adhesive 14 to the outside when there is a large amount of adhesive 14 applied, such as... Figure 11 As shown, a protrusion 19a and a recess 21b are provided on the lower surface joint 13 of the housing frame 11, and a recess 22a and a protrusion 24 with a through hole 25 are provided on the upper surface joint 12 of the heat sink 2. The protrusions 19a, 21b, 24, and 22a are positioned at locations where the protrusion 19a engages with the recess 22a and the protrusion 24 engages with the recess 21b when the housing frame 11 is joined to the heat sink 2. The depth of the recess 22a is shallower than the height of the protrusion 19a, and the depth of the recess 21b is shallower than the height of the protrusion 24. Furthermore, adhesive 14 is applied to the area surrounded by the protrusions 19a and 24.
[0066] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 24, thereby preventing the adhesive 14 from penetrating into the inner side of the semiconductor device. After joining, protrusion 19a acts as a barrier, thus preventing the adhesive 14 from leaking into the inner side of the semiconductor device. Furthermore, the depth of recesses 22a and 21b is shallower than the height of protrusions 19a and 24, allowing the adhesive 14 to remain in the area surrounded by protrusions 19a and 24. Moreover, if the amount of adhesive 14 applied is greater than the area surrounded by protrusions 19a and 24, the excess adhesive 14 is discharged outwards through the through-hole 25.
[0067] Furthermore, since the protrusion 19a and the recess 22a fit together, and the protrusion 24 and the recess 21b fit together, misalignment can be prevented when the heat sink 2 and the housing frame 11 are joined.
[0068] Therefore, in addition to the same effect as in Embodiment 4, even when a large amount of adhesive 14 is applied, it is possible to suppress the decrease in yield caused by the adhesive 14 leaking into the inside of the semiconductor device.
[0069] Implementation Method 8
[0070] Figure 12 This is an enlarged cross-sectional view of the joint 18 according to Embodiment 8. Embodiment 8 has a structure in which the housing frame 11 is provided with a groove 26 for releasing the adhesive 14 when there is a large amount of adhesive 14 applied, such as... Figure 12As shown, a protrusion 19a, a recess 21b, and a groove 26 are provided on the lower surface joint 13 of the housing frame 11, and a protrusion 20b and a recess 22a are provided on the upper surface joint 12 of the heat sink 2. The protrusions 19a, 21b, 20b, and 22a are positioned at locations where the protrusion 19a engages with the recess 22a and the protrusion 20b engages with the recess 21b when the heat sink 2 is joined to the housing frame 11. The depth of the recess 22a is shallower than the height of the protrusion 19a, and the depth of the recess 21b is shallower than the height of the protrusion 20b. The groove 26 is located between the protrusions 19a and 21b. Furthermore, adhesive 14 is applied to the area surrounded by the protrusions 19a and 20b.
[0071] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 20b, thereby preventing the adhesive 14 from penetrating into the interior of the semiconductor device. After joining, protrusion 19a acts as a barrier, thus preventing the adhesive 14 from leaking into the interior of the semiconductor device. Furthermore, the depth of recesses 22a and 21b is shallower than the height of protrusions 19a and 20b, allowing the adhesive 14 to remain in the area surrounded by protrusions 19a and 20b. Moreover, if the amount of adhesive 14 applied is greater than the area surrounded by protrusions 19a and 20b, the excess adhesive 14 can be released into the groove 26.
[0072] Furthermore, since the protrusion 19a and the recess 22a fit together, and the protrusion 20b and the recess 21b fit together, misalignment can be prevented when the heat sink 2 and the housing frame 11 are joined.
[0073] Therefore, the same effect as in embodiment 7 can be obtained.
[0074] Implementation Method 9
[0075] Figure 13 This is an enlarged cross-sectional view of the joint 18 involved in Embodiment 9. Embodiment 9 has a structure in which the housing frame 11 is provided with an air hole 27 that is directly connected to the groove 26 of Embodiment 8, such as... Figure 13As shown, a protrusion 19a, a recess 21b, and a groove 26 are provided on the lower surface joint portion 13 of the housing frame 11. An air hole 27, directly connected to the groove 26 and communicating with the outside of the semiconductor device, is provided on the housing frame 11. A protrusion 20b and a recess 22a are provided on the upper surface joint portion 12 of the heat sink 2. The protrusions 19a, 21b, 20b, and 22a are positioned where the protrusion 19a engages with the recess 22a and the protrusion 20b engages with the recess 21b when the heat sink 2 is joined to the housing frame 11. The depth of the recess 22a is shallower than the height of the protrusion 19a, and the depth of the recess 21b is shallower than the height of the protrusion 20b. The groove 26 is provided between the protrusion 19a and the recess 21b and is directly connected to the air hole 27. Apply adhesive 14 to the area surrounded by protrusions 19a and 20b.
[0076] Figure 14 This diagram, shown by dashed lines, illustrates the positional relationship between the groove 26 formed at the joint 13 on the lower surface of the housing frame 11 and the air hole 27 provided in the housing frame 11 when viewed from the direction covered by the housing frame 11 and the cover 17, of the semiconductor device. Figure 14 As shown, air holes 27 are provided at multiple locations, directly connected to the groove 26 provided at the joint 13 on the lower surface of the housing frame 11.
[0077] In this semiconductor device configuration, when the heat sink 2 is joined to the housing frame 11, adhesive 14 is applied to the area surrounded by protrusions 19a and 20b, thereby preventing the adhesive 14 from penetrating into the interior of the semiconductor device. After joining, protrusion 19a acts as a barrier, thus preventing the adhesive 14 from leaking into the interior of the semiconductor device. Furthermore, the depth of recesses 22a and 21b is shallower than the height of protrusions 19a and 20b, allowing the adhesive 14 to remain in the area surrounded by protrusions 19a and 20b. Moreover, if the amount of adhesive 14 applied is greater than the area surrounded by protrusions 19a and 20b, the excess adhesive 14 can be released into the groove 26, which is directly connected to the air hole 27.
[0078] Therefore, an air release channel is ensured through the air hole 27, so that when a large amount of adhesive 14 is applied relative to the area surrounded by the protrusions 19a and 20b, the adhesive 14 can be released into the groove 26 more reliably than in embodiment 7.
[0079] Implementation Method 10
[0080] Figure 15 This is a cross-sectional view of the inverter device 28 according to Embodiment 10. Figure 15 The inverter device 28 shown is an inverter device in which fins 29 are mounted on the heat sink 2 of the semiconductor device 1 shown in Embodiment 1. Furthermore, in Figure 15 The diagram shows an inverter device that uses the semiconductor device shown in Embodiment 1, but it may also be an inverter device equipped with the semiconductor devices shown in Embodiments 1 to 9.
[0081] The inverter device configured in this way can provide an inverter device with the effects shown in Embodiment 1. Furthermore, not limited to Embodiment 1, an inverter device with the effects shown in Embodiments 1 to 9 can be provided by an inverter device equipped with the semiconductor device shown in Embodiments 1 to 9.
[0082] Explanation of the label
[0083] 1. Semiconductor device
[0084] 2. Heat sink
[0085] 3 Wiring board
[0086] 4 Insulating substrate
[0087] 5. Lower surface electrode
[0088] 6. Upper surface electrode
[0089] 7. Upper surface electrode
[0090] Solder 8a, 8b
[0091] 9 Semiconductor chips
[0092] 10. Conductor
[0093] 11. Shell frame
[0094] 12 Upper surface joint
[0095] 13 Lower surface joint
[0096] 14 Adhesives
[0097] 15. Packaging Materials
[0098] 16. Opening
[0099] 17 Cover
[0100] 18 Joint
[0101] 19a, 19b, 19c convex part
[0102] 20a, 20b convex part
[0103] 21b recess
[0104] 22a, 22b, 22c concave portion
[0105] 23 Outer edge of heat sink
[0106] 24 convex part
[0107] 25 Through holes
[0108] 26. Groove
[0109] 27 Air holes
[0110] 28 Inverter Unit
[0111] 29 fins
Claims
1. A semiconductor device comprising: Heat sink; A wiring board is disposed on the heat sink; A semiconductor chip is disposed on the wiring substrate; A housing frame is disposed on the heat sink in a manner that surrounds the wiring substrate and the semiconductor chip; An adhesive is used to bond the lower surface joint of the housing frame to the upper surface joint of the heat sink at positions opposite to each other. Encapsulation material is filled within the housing frame to cover the wiring substrate and the semiconductor chip; The first protrusion separates the adhesive from the encapsulation material at the lower surface joint of the housing frame or the upper surface joint of the heat sink. The second protrusion, which is located further outward than the first protrusion, is disposed on the upper surface joint of the heat sink or the lower surface joint of the housing frame; A first recess, which engages with the first protrusion, is disposed at the upper surface joint of the heat sink or the lower surface joint of the housing frame; and The second recess, which engages with the second protrusion, is disposed on the upper surface joint of the heat sink or the lower surface joint of the housing frame. The depth of the first recess is shallower than the height of the first protrusion. The depth of the second recess is shallower than the height of the second protrusion. The adhesive was applied to the area surrounded by the first protrusion and the second protrusion. In the height direction of the first protrusion and the second protrusion, except for the portions corresponding to the first protrusion, the first recess, the second protrusion and the second recess, the heat sink is separated from the housing frame.
2. The semiconductor device according to claim 1, wherein, The second protrusion is provided with a through hole that allows adhesive to flow out from the inside of the semiconductor device toward the outside.
3. The semiconductor device according to claim 1, wherein, The semiconductor device has a groove located between the first protrusion and the second protrusion, which is disposed on the lower surface of the housing frame.
4. The semiconductor device according to claim 1, wherein, The semiconductor device has an air hole located between the first protrusion and the second protrusion, which extends through the housing frame from the lower surface joint of the housing frame.
5. A semiconductor device comprising: Heat sink; A wiring board is disposed on the heat sink; A semiconductor chip is disposed on the wiring substrate; A housing frame is disposed on the heat sink in a manner that surrounds the wiring substrate and the semiconductor chip; An adhesive is used to bond the lower surface joint of the housing frame to the upper surface joint of the heat sink at positions opposite to each other. The first protrusion is disposed on the lower surface joint of the housing frame or the upper surface joint of the heat sink. The second protrusion, which is located further outward than the first protrusion, is disposed on the upper surface joint of the heat sink or the lower surface joint of the housing frame; A first recess, which engages with the first protrusion, is disposed at the upper surface joint of the heat sink or the lower surface joint of the housing frame; and The second recess, which engages with the second protrusion, is disposed on the upper surface joint of the heat sink or the lower surface joint of the housing frame. The depth of the first recess is shallower than the height of the first protrusion. The depth of the second recess is shallower than the height of the second protrusion. The adhesive was applied to the outer side of the second protrusion. In the height direction of the first protrusion and the second protrusion, except for the portions corresponding to the first protrusion, the first recess, the second protrusion and the second recess, the heat sink is separated from the housing frame.
6. The semiconductor device according to claim 5, wherein, The semiconductor device has: A third protrusion, located further outward than the second protrusion, is disposed at the upper surface joint of the heat sink or the lower surface joint of the housing frame; and The third recess, which engages with the third protrusion, is disposed at the upper surface joint of the heat sink or the lower surface joint of the housing frame. Compared to the height of the third protrusion, the depth of the third recess is shallower. The adhesive was applied to the area surrounded by the second and third protrusions.
7. An inverter device comprising: The semiconductor device according to any one of claims 1 to 6; and Fins disposed on the heat sink of the semiconductor device.