Low-cost IGBT-based permanent magnet switch H-bridge drive circuit with interlock function

Abstract

The present invention discloses a low-cost permanent magnet switch H-bridge drive circuit with an interlock function based on IGBTs, which includes a first drive module and a second drive module. One end of the permanent magnet switch is connected to the first drive module, and the other end of the permanent magnet switch is connected to the second drive module. The first drive module and the second drive module are constituted by IGBT tubes. This circuit can achieve safe and reliable drive of the permanent magnet switch and has a relatively low cost.

Description

Technical Field

[0001] The present invention relates to a driving circuit, and particularly to a low-cost permanent magnet switch H-bridge driving circuit based on IGBT with an interlock function. Background Art

[0002] Permanent magnet switches have the advantages of simple structure, long mechanical life, fast and reliable switching actions compared with traditional spring-operated switches, and have been widely used in power transmission and distribution switchgear in recent years. Since the operating current required by permanent magnet switches is relatively large, exceeding the maximum conduction current of general relays or MOS transistors, generally 4 groups of IGBTs are used to form an H-bridge as the driving circuit of permanent magnet switches at present. Due to the existence of parasitic capacitance inside the IGBT, there is a delay in the conduction and turn-off of the IGBT, and the upper and lower bridge arms may conduct simultaneously during actual operation, causing the energy storage capacitor to short-circuit to the ground through the IGBT, damaging the IGBT, and further affecting the operation of the permanent magnet switch and endangering the safe operation of the power grid. Therefore, it is necessary to avoid the common conduction of the H-bridge during the design of the driving circuit.

[0003] Prior Art:

[0004] Solution 1: Use NAND gates to form a driving signal mutual exclusion circuit to prevent the simultaneous conduction of high-side and low-side IGBTs. Taking the left half-bridge of the H-bridge as an example, the IGBT driving circuit composed of NAND gates is as shown in the appendix Figure 1 as follows.

[0005] Solution 2: Use a half-bridge driving chip with a dead zone circuit, such as the commonly used IR2103. The chip is internally designed with a bootstrap floating circuit and only requires a single power supply. The H-bridge driving circuit composed of IR2103 is as shown in the appendix Figure 2 as follows.

[0006] For Solution 1, the gate driving signal of the IGBT also needs to be electrically isolated through an optocoupler, and a high-speed optocoupler with a reverse recovery time less than the output delay time of the NAND gate needs to be selected to ensure the reliable turn-off of the IGBT that needs to be turned off. However, this will result in a relatively high overall cost and is not suitable for large-scale use.

[0007] For Solution 2, the energy supplied by the bootstrap capacitor is limited, and in a low-temperature environment, the increase in the ESR of the bootstrap capacitor causes an increase in the voltage drop, which easily results in the inability of the high-side output of the IR2103 to drive the IGBT to fully conduct or cut off. In addition, the bootstrap capacitor is suitable for a monostable environment and cannot meet the requirement of providing energy for the high-side IGBT of the H-bridge during multiple on-off operations within a short time. At the same time, the cost of using a half-bridge chip is high and it is not suitable for large-scale applications. Summary of the Invention

[0008] The object of the present invention is to overcome the disadvantages of the above-mentioned prior art, and provides a low-cost permanent magnet switch H-bridge drive circuit with an interlock function based on IGBT, which can realize the safe and reliable drive of the permanent magnet switch and has a relatively low cost.

[0009] To achieve the above object, the low-cost permanent magnet switch H-bridge drive circuit with an interlock function based on IGBT described in the present invention includes a first drive module and a second drive module. One end of the permanent magnet switch is connected to the first drive module, and the other end of the permanent magnet switch is connected to the second drive module. The first drive module and the second drive module are constituted based on IGBT tubes.

[0010] The first drive module and the second drive module. The first drive module and the second drive module both include a system power supply, an isolated power supply, a tripping signal input terminal, a closing signal input terminal, a Cut-HZ signal terminal, a Cut-FZ signal terminal, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a first optocoupler, a second optocoupler, a third optocoupler, a first NPN transistor, a first PNP transistor, a third NPN transistor, a second NPN transistor, a second PNP transistor, a first zener diode, a second zener diode, a first IGBT tube and a second IGBT tube;

[0011] The system power supply is connected to the positive electrode of the input terminal of the first optocoupler through the first resistor. The tripping signal input terminal is connected to the negative electrode of the input terminal of the first optocoupler in the first drive module and the negative electrode of the input terminal of the third optocoupler in the second drive module. The positive electrode of the output terminal of the first optocoupler is connected to one end of the second resistor. The isolated power supply is connected to the other end of the second resistor and the collector of the first NPN transistor. The negative electrode of the output terminal of the first optocoupler is connected to the positive electrode of the output terminal of the second optocoupler, one end of the sixth resistor, the base of the first NPN transistor and the base of the first PNP transistor. The emitter of the first NPN transistor and the emitter of the first PNP transistor are connected to one end of the third resistor. The other end of the third resistor is connected to the negative electrode of the first zener diode, one end of the fourth resistor and the gate of the first IGBT tube. The negative electrode of the input terminal of the second optocoupler, the negative electrode of the output terminal of the second optocoupler, one end of the sixth resistor, the collector of the first PNP transistor, the positive electrode of the first zener diode, the other end of the fourth resistor and the emitter of the first IGBT tube are all grounded;

[0012] The system power supply is connected to the positive pole of the input terminal of the seventh resistor and the third optocoupler. The closing signal input terminal is connected to the negative pole of the input terminal of the third optocoupler in the first driving module and the negative pole of the input terminal of the first optocoupler in the second driving module. The positive pole of the input terminal of the second optocoupler is connected to one end of the fifth resistor, one end of the eighth resistor, the negative pole of the output terminal of the third optocoupler, and one end of the ninth resistor. The isolated power supply is connected to the positive pole of the output terminal of the third optocoupler and the collector of the second NPN transistor. The Cut-HZ signal terminal is connected to the other end of the ninth resistor in the first driving module, the base of the second NPN transistor, one end of the tenth resistor, the base of the second PNP transistor, and the collector of the third NPN transistor in the second driving module. The Cut-FZ signal terminal is connected to the collector of the third NPN transistor in the first driving module and the other end of the ninth resistor in the second driving module, the base of the second NPN transistor, one end of the tenth resistor, and the base of the second PNP transistor. The base of the third NPN transistor is connected to the other end of the eighth resistor. The emitter of the second NPN transistor is connected to the emitter of the second PNP transistor and one end of the eleventh resistor. The other end of the eleventh resistor is connected to the negative pole of the second zener diode, one end of the twelfth resistor, and the gate of the second IGBT transistor. The collector of the second IGBT transistor, the emitter of the second IGBT transistor, the emitter of the third NPN transistor, one end of the tenth resistor, the collector of the second PNP transistor, the positive pole of the second zener diode, and the other end of the twelfth resistor are all grounded;

[0013] One end of the permanent magnet switch is connected to the emitter of the first IGBT transistor and the collector of the second IGBT transistor in the first driving module. The other end of the permanent magnet switch is connected to the emitter of the first IGBT transistor and the collector of the second IGBT transistor in the second driving module.

[0014] The present invention has the following beneficial effects:

[0015] When the permanent magnet switch H-bridge driving circuit based on IGBT with low cost and interlock function of the present invention is specifically operated, the first driving module and the second driving module are constructed based on IGBT, and the permanent magnet switch is driven through the first driving module and the second driving module to ensure the safe and reliable driving of the permanent magnet switch, and at the same time avoid using IR2103, with relatively low cost. Description of the Drawings

[0016] Figure 1 IGBT driving circuit composed of NAND gates;

[0017] Figure 2 H-bridge driving circuit composed of IR2103;

[0018] Figure 3 Circuit schematic diagram of the present invention. Detailed Embodiments

[0019] To enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments, and are not intended to limit the scope of the present disclosure. In addition, in the following description, the descriptions of well-known structures and technologies are omitted to avoid unnecessarily confusing the concepts disclosed in the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present invention.

[0020] The structural schematic diagrams according to the disclosed embodiments of the present invention are shown in the accompanying drawings. These figures are not drawn to scale, where for the purpose of clear expression, some details are enlarged and some details may be omitted. The shapes of various regions and layers shown in the figures, as well as their relative sizes and positional relationships, are only exemplary. In practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art can design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0021] Referring to Figure 3 , the low-cost IGBT-based permanent magnet switch H-bridge drive circuit with an interlock function according to the present invention includes a first drive module and a second drive module. Both the first drive module and the second drive module include a system power supply, an isolated power supply, a trip signal input terminal FZ, a close signal input terminal HZ, a Cut-HZ signal terminal, a Cut-FZ signal terminal, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a first optocoupler U1, a second optocoupler U2, a third optocoupler U3, a first NPN transistor Q1, a first PNP transistor Q2, a third NPN transistor Q3, a second NPN transistor Q4, a second PNP transistor Q5, a first zener diode D1, a second zener diode D2, a first IGBT tube BG1, and a second IGBT tube BG2;

[0022] The system power supply is connected to the positive pole of the input end of the first optocoupler U1 through the first resistor R1. The tripping signal input end FZ is connected to the negative pole of the input end of the first optocoupler U1 in the first driving module and the negative pole of the input end of the third optocoupler U3 in the second driving module. The positive pole of the output end of the first optocoupler U1 is connected to one end of the second resistor R2. The isolated power supply is connected to the other end of the second resistor R2 and the collector of the first NPN transistor Q1. The negative pole of the output end of the first optocoupler U1 is connected to the positive pole of the output end of the second optocoupler U2, one end of the sixth resistor R6, the base of the first NPN transistor Q1, and the base of the first PNP transistor Q2. The emitter of the first NPN transistor Q1 and the emitter of the first PNP transistor Q2 are connected to one end of the third resistor R3. The other end of the third resistor R3 is connected to the negative pole of the first zener diode D1, one end of the fourth resistor R4, and the gate of the first IGBT transistor BG1. The negative pole of the input end of the second optocoupler U2, the negative pole of the output end of the second optocoupler U2, one end of the sixth resistor R6, the collector of the first PNP transistor Q2, the positive pole of the first zener diode D1, the other end of the fourth resistor R4, and the emitter of the first IGBT transistor BG1 are all grounded;

[0023] The system power supply is connected to the positive pole of the input end of the seventh resistor R7 and the third optocoupler U3. The closing signal input terminal HZ is connected to the negative pole of the input end of the third optocoupler U3 in the first driving module and the negative pole of the input end of the first optocoupler U1 in the second driving module. The positive pole of the input end of the second optocoupler U2 is connected to one end of the fifth resistor R5, one end of the eighth resistor R8, the negative pole of the output end of the third optocoupler U3, and one end of the ninth resistor R9. The isolated power supply is connected to the positive pole of the output end of the third optocoupler U3 and the collector of the second NPN transistor Q4. The Cut-HZ signal terminal is connected to the other end of the ninth resistor R9 in the first driving module, the base of the second NPN transistor Q4, one end of the tenth resistor R10, the base of the second PNP transistor Q5, and the collector of the third NPN transistor Q3 in the second driving module. The Cut-FZ signal terminal is connected to the collector of the third NPN transistor Q3 in the first driving module and the other end of the ninth resistor R9 in the second driving module, the base of the second NPN transistor Q4, one end of the tenth resistor R10, and the base of the second PNP transistor Q5. The base of the third NPN transistor Q3 is connected to the other end of the eighth resistor R8. The emitter of the second NPN transistor Q4 is connected to the emitter of the second PNP transistor Q5 and one end of the eleventh resistor R11. The other end of the eleventh resistor R11 is connected to the negative pole of the second zener diode D2, one end of the twelfth resistor R12, and the gate of the second IGBT transistor BG2. The collector of the second IGBT transistor BG2, the emitter of the second IGBT transistor BG2, the emitter of the third NPN transistor Q3, one end of the tenth resistor R10, the collector of the second PNP transistor Q5, the positive pole of the second zener diode D2, and the other end of the twelfth resistor R12 are all grounded;

[0024] One end of the permanent magnet switch is connected to the emitter of the first IGBT transistor BG1 and the collector of the second IGBT transistor BG2 in the first driving module. The other end of the permanent magnet switch is connected to the emitter of the first IGBT transistor BG1 and the collector of the second IGBT transistor BG2 in the second driving module.

[0025] The working principle of the present invention is as follows:

[0026] The opening signal and the closing signal are initially defaulted to high level. At this time, the first optocoupler U1 and the third optocoupler U3 in the first driving module and the first optocoupler U1 and the third optocoupler U3 in the second driving module are all in the cut-off state, and the first IGBT transistor BG1 and the second IGBT transistor BG2 in the first driving module and the first IGBT transistor BG1 and the second IGBT transistor BG2 in the second driving module cause the upper and lower bridge arms of the H bridge to be disconnected.

[0027] When the opening signal terminal FZ is at low level and the closing signal terminal HZ is at high level, the first optocoupler U1 in the first driving module and the third optocoupler U3 in the second driving module are turned on, and the third optocoupler U3 in the first driving module and the first optocoupler U1 in the second driving module are turned off, causing the first NPN transistor Q1 in the first driving module and the second NPN transistor Q4 in the second driving module to be turned on, and the first PNP transistor Q2 in the first driving module and the second PNP transistor Q5 in the second driving module to be turned off, making the first IGBT tube BG1 in the first driving module and the second IGBT tube BG2 in the second driving module turn on; at the same time, due to the conduction of the third optocoupler U3 in the second driving module, the third NPN transistor Q3 in the second driving module is turned on, and the Cut-HZ signal terminal is pulled low, thereby causing the second NPN transistor Q4 and the second PNP transistor Q5 in the first driving module to be turned off and on respectively, pulling down the gate voltage of the second IGBT tube BG2 in the first driving module, and the second IGBT tube BG2 in the first driving module is turned off. Also, due to the conduction of the third optocoupler U3 in the second driving module, the second optocoupler U2 in the second driving module is turned on, and the base of the first PNP transistor Q2 in the second driving module is pulled low and turned on, thereby pulling down the gate of the first IGBT tube BG1 in the second driving module and turning it off.

[0028] When the opening signal FZ is at high level and the closing signal HZ is at low level, the third optocoupler U3 in the first driving module and the first optocoupler U1 in the second driving module are turned on, and the first optocoupler U1 in the first driving module and the third optocoupler U3 in the second driving module are turned off, causing the second NPN transistor Q4 in the first driving module and the first NPN transistor Q1 in the second driving module to be turned on, and the second PNP transistor Q5 in the first driving module and the first PNP transistor Q2 in the second driving module to be turned off, making the second IGBT tube BG2 in the first driving module and the first IGBT tube BG1 in the second driving module turn on; at the same time, due to the conduction of the third optocoupler U3 in the first driving module, the third NPN transistor Q3 in the first driving module is turned on, and the Cut-FZ signal is pulled low, thereby causing the second NPN transistor Q4 and the second PNP transistor Q5 in the second driving module to be turned off and on respectively, pulling down the gate voltage of the second IGBT tube BG2 in the second driving module, and the second IGBT tube BG2 in the second driving module is turned off. Also, due to the conduction of the third optocoupler U3 in the first driving module, the second optocoupler U2 in the first driving module is turned on, and the base of the first PNP transistor Q2 in the first driving module is pulled low and turned on, thereby pulling down the gate of the first IGBT tube BG1 in the first driving module and turning it off.

[0029] When both the opening signal FZ and the closing signal HZ are at low levels, the third optocoupler U3 in the first driving module and the third optocoupler U3 in the second driving module conduct, causing both Cut-HZ and Cut-FZ to be pulled low, making the second NPN transistor Q4 in the first driving module and the second NPN transistor Q4 in the second driving module cut off, and the second PNP transistor Q5 in the first driving module and the second PNP transistor Q5 in the second driving module conduct. Eventually, the gates of the second IGBT transistors BG2 in the first driving module and the second driving module are pulled low and cut off; moreover, the conduction of the third optocoupler U3 in the first driving module and the third optocoupler U3 in the second driving module also drives the second optocoupler U2 in the first driving module and the second optocoupler U2 in the second driving module to conduct, making the first NPN transistor Q1 in the first driving module and the first NPN transistor Q1 in the second driving module cut off, and the first PNP transistor Q2 in the first driving module and the first PNP transistor Q2 in the second driving module conduct. Eventually, the gates of the first IGBT transistors BG1 in the first driving module and the second driving module are pulled low and cut off. At this time, the first IGBT transistors BG1 and BG2 in the first driving module and the first IGBT transistors BG1 and BG2 in the second driving module are all in the cut-off state.

[0030] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications or equivalent replacements can still be made to the specific embodiments of the present invention. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention shall be covered by the protection scope of the claims of the present invention.

Claims

1. A low-cost permanent magnet switch H-bridge drive circuit with an interlock function based on IGBT, characterized in that, It includes a first driving module and a second driving module. One end of the permanent magnet switch is connected to the first driving module, and the other end of the permanent magnet switch is connected to the second driving module. The first driving module and the second driving module are constituted based on IGBT tubes; The first driving module and the second driving module. The first driving module and the second driving module both include a system power supply, an isolated power supply, a tripping signal input terminal (FZ), a closing signal input terminal (HZ), a Cut-HZ signal terminal, a Cut-FZ signal terminal, a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a seventh resistor (R7), an eighth resistor (R8), a ninth resistor (R9), a tenth resistor (R10), an eleventh resistor (R11), a twelfth resistor (R12), a first optocoupler (U1), a second optocoupler (U2), a third optocoupler (U3), a first NPN transistor (Q1), a first PNP transistor (Q2), a third NPN transistor (Q3), a second NPN transistor (Q4), a second PNP transistor (Q5), a first zener diode (D1), a second zener diode (D2), a first IGBT tube (BG1) and a second IGBT tube (BG2); The system power supply is connected to the positive electrode of the input terminal of the first optocoupler (U1) through the first resistor (R1). The tripping signal input terminal (FZ) is connected to the negative electrode of the input terminal of the first optocoupler (U1) in the first driving module and the negative electrode of the input terminal of the third optocoupler (U3) in the second driving module. The positive electrode of the output terminal of the first optocoupler (U1) is connected to one end of the second resistor (R2). The isolated power supply is connected to the other end of the second resistor (R2) and the collector of the first NPN transistor (Q1). The negative electrode of the output terminal of the first optocoupler (U1) is connected to the positive electrode of the output terminal of the second optocoupler (U2), one end of the sixth resistor (R6), the base of the first NPN transistor (Q1) and the base of the first PNP transistor (Q2). The emitter of the first NPN transistor (Q1) and the emitter of the first PNP transistor (Q2) are connected to one end of the third resistor (R3). The other end of the third resistor (R3) is connected to the negative electrode of the first zener diode (D1), one end of the fourth resistor (R4) and the gate of the first IGBT tube (BG1). The negative electrode of the input terminal of the second optocoupler (U2), the negative electrode of the output terminal of the second optocoupler (U2), one end of the sixth resistor (R6), the collector of the first PNP transistor (Q2), the positive electrode of the first zener diode (D1), the other end of the fourth resistor (R4) and the emitter of the first IGBT tube (BG1) are all grounded; The system power supply is connected to the positive pole of the input end of the third optocoupler (U3) via the seventh resistor (R7). The closing signal input terminal (HZ) is connected to the negative pole of the input end of the third optocoupler (U3) in the first drive module and the negative pole of the input end of the first optocoupler (U1) in the second drive module. The positive pole of the input end of the second optocoupler (U2) is connected to one end of the fifth resistor (R5), one end of the eighth resistor (R8), the negative pole of the output end of the third optocoupler (U3), and one end of the ninth resistor (R9). The isolated power supply is connected to the positive pole of the output end of the third optocoupler (U3) and the collector of the second NPN transistor (Q4). The Cut-HZ signal terminal is connected to the other end of the ninth resistor (R9) in the first drive module, the base of the second NPN transistor (Q4), one end of the tenth resistor (R10), the base of the second PNP transistor (Q5), and the collector of the third NPN transistor (Q3) in the second drive module. The Cut-FZ signal terminal is connected to the collector of the third NPN transistor (Q3) in the first drive module and the other end of the ninth resistor (R9) in the second drive module, the base of the second NPN transistor (Q4), one end of the tenth resistor (R10), and the base of the second PNP transistor (Q5). The base of the third NPN transistor (Q3) is connected to the other end of the eighth resistor (R8). The emitter of the second NPN transistor (Q4) is connected to the emitter of the second PNP transistor (Q5) and one end of the eleventh resistor (R11). The other end of the eleventh resistor (R11) is connected to the negative pole of the second zener diode (D2), one end of the twelfth resistor (R12), and the gate of the second IGBT (BG2). The collector of the second IGBT (BG2), the emitter of the second IGBT (BG2), the emitter of the third NPN transistor (Q3), one end of the tenth resistor (R10), the collector of the second PNP transistor (Q5), the positive pole of the second zener diode (D2), and the other end of the twelfth resistor (R12) are all grounded; One end of the permanent magnet switch is connected to the emitter of the first IGBT (BG1) and the collector of the second IGBT (BG2) in the first drive module. The other end of the permanent magnet switch is connected to the emitter of the first IGBT (BG1) and the collector of the second IGBT (BG2) in the second drive module.

2. The low-cost permanent magnet switch H-bridge drive circuit with interlock function based on IGBT according to claim 1, wherein When the opening signal input terminal (FZ) is at low level and the closing signal input terminal (HZ) is at high level, the first optocoupler (U1) in the first drive module and the third optocoupler (U3) in the second drive module are turned on, and the third optocoupler (U3) in the first drive module and the first optocoupler (U1) in the second drive module are turned off, causing the first NPN transistor (Q1) in the first drive module and the second NPN transistor (Q4) in the second drive module to be turned on.

3. The IGBT-based low-cost permanent magnet switch H-bridge drive circuit with interlock function according to claim 1, characterized in that, When the opening signal is at high level and the closing signal is at low level, the third optocoupler (U3) in the first drive module and the first optocoupler (U1) in the second drive module are turned on, and the first optocoupler (U1) in the first drive module and the third optocoupler (U3) in the second drive module are turned off.

4. The IGBT-based low-cost permanent magnet switch H-bridge drive circuit with interlock function according to claim 1, characterized in that When both the opening signal and the closing signal are at low level, the third optocoupler (U3) in the first drive module and the third optocoupler (U3) in the second drive module are turned on.

5. The low-cost permanent magnet switch H-bridge drive circuit with interlock function based on IGBT according to claim 1, characterized in that, The opening signal and the closing signal are initially defaulted to high level. At this time, the first optocoupler (U1) and the third optocoupler (U3) in the first drive module and the first optocoupler (U1) and the third optocoupler (U3) in the second drive module are all in the off state. The first IGBT tubes (BG1) and the second IGBT tubes (BG2) in the first drive module and the first IGBT tubes (BG1) and the second IGBT tubes (BG2) in the second drive module cause both the upper and lower bridge arms of the H-bridge to be disconnected.

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