Electronic device

Abstract

An electronic device includes an electronic unit and a functional unit. The electronic unit includes a substrate, a plurality of semiconductor elements, and a cover layer. The substrate has a plurality of first side surfaces. The semiconductor elements are disposed on the substrate. The cover layer is disposed on the plurality of semiconductor elements and has a plurality of second side surfaces. The functional unit is disposed on at least one of the plurality of first side surfaces and at least one of the plurality of second side surfaces.

Description

Technical Field

[0001] This disclosure relates to an electronic device. Background Technology

[0002] Using multiple modular units to create large-scale electronic devices has been proposed. However, issues such as inconsistent optical effects or static electricity buildup may arise at the connections between these units. Therefore, there is still room for improvement in the structural design of modular electronic devices. Summary of the Invention

[0003] According to an embodiment of this disclosure, an electronic device includes an electronic unit and a functional unit. The electronic unit includes a substrate, a plurality of semiconductor elements, and a cover layer. The substrate has a plurality of first side surfaces. The semiconductor elements are disposed on the substrate. The cover layer is disposed on the plurality of semiconductor elements and has a plurality of second side surfaces. The functional unit is disposed on at least one of at least one of the plurality of first side surfaces and at least one of the plurality of second side surfaces.

[0004] According to an embodiment of this disclosure, an electronic device includes an electronic unit. The electronic unit includes a substrate, a plurality of semiconductor elements, and a capping layer. The substrate has a plurality of first side surfaces. The semiconductor elements are disposed on the substrate. The capping layer is disposed on the plurality of semiconductor elements and has a plurality of second side surfaces, wherein at least one of the plurality of second side surfaces has a chamfered structure.

[0005] To make the above-mentioned features and advantages disclosed herein more apparent and understandable, embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0006] The accompanying drawings are included to further illustrate the present disclosure, and are incorporated in and form a part of this specification. The drawings illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the disclosure.

[0007] Figure 1 This is a schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0008] Figure 2 This is a partial schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0009] Figures 3A to 3F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II;

[0010] Figures 4A to 4F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II;

[0011] Figures 5A to 5F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II;

[0012] Figures 6A to 6F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II;

[0013] Figure 7 This is a partial cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure;

[0014] Figure 8 This is a schematic diagram of the cross-sectional structure of the substrate of the electronic unit of some embodiments disclosed herein;

[0015] Figure 9 This is a partial schematic diagram of the substrate of two adjacent electronic units in some embodiments disclosed herein;

[0016] Figure 10 This is a perspective view of an electronic device in one embodiment of the present disclosure;

[0017] Figures 11A to 11J This is a partial cross-sectional schematic diagram of an electronic device that discloses some embodiments;

[0018] Figure 12 This is a partial cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure. Detailed Implementation

[0019] Throughout this specification and the appended claims, certain terms are used to refer to specific components. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same components. This document is not intended to distinguish between components that have the same function but different names. In the following specification and claims, words such as "containing" and "comprising" are open-ended terms and should therefore be interpreted as "containing but not limited to...".

[0020] The directional terms used herein, such as "up," "down," "front," "back," "left," and "right," are for reference only when referring to the accompanying drawings. Therefore, the directional terms used are illustrative and not intended to limit this disclosure. In the accompanying drawings, each figure illustrates general features of the methods, structures, and / or materials used in specific embodiments. However, these figures should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and locations of various films, regions, and / or structures may be reduced or enlarged.

[0021] In this disclosure, a structure (or layer, component, substrate) located on / above another structure (or layer, component, substrate) can refer to the two structures being adjacent and directly connected, or to the two structures being adjacent but not directly connected. Indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate component, intermediate substrate, intermediate spacer) between the two structures, with the lower surface of one structure adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure adjacent to or directly connected to the lower surface of the intermediate structure. The intermediate structure can be composed of a single or multiple solid or non-solid structure, without limitation. In this disclosure, when a structure is placed "on" another structure, it may mean that the structure is "directly" on the other structure, or that the structure is "indirectly" on the other structure, meaning that at least one other structure is sandwiched between the structure and the other structure.

[0022] The ordinal numbers used in the specification and claims, such as "first" and "second," to modify elements do not inherently imply or represent any prior ordinal number for that element (or those elements), nor do they represent the order of one element with another, or the order of manufacturing processes. The use of these ordinal numbers is solely to clearly distinguish one named element from another with the same name. The claims and specification may not use the same terminology; therefore, a first element in the specification may be a second element in the claims.

[0023] The electrical connections or couplings described in this disclosure can refer to direct or indirect connections. In the case of a direct connection, the endpoints of the components on two circuits are directly connected or connected to each other by a conductor segment. In the case of an indirect connection, there is a switch, diode, capacitor, inductor, resistor, other suitable components, or combinations of the above components between the endpoints of the components on two circuits, but not limited to these.

[0024] In this disclosure, the thickness, length, and width can be measured using an optical microscope, while the thickness or width can be measured from cross-sectional images in an electron microscope, but are not limited to these methods. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. Additionally, the terms "equal to," "equivalent to," "identical," "substantially," or "approximately" used in this disclosure generally mean falling within 10% of a given value. Moreover, the phrases "given range is from a first value to a second value" or "given range falls within the range of the first value to the second value" indicate that the given range includes the first value, the second value, and other values ​​between them. If the first direction is perpendicular to the second direction, the angular difference between the first and second directions can be between 70 degrees and 110 degrees; if the first direction is parallel to the second direction, the angular difference between the first and second directions can be between 0 degrees and 20 degrees.

[0025] It should be understood that the features in the following embodiments can be replaced, recombined, or mixed to complete other embodiments without departing from the spirit of this disclosure. Features between embodiments can be arbitrarily mixed and combined as long as they do not violate the spirit of the invention or conflict with it.

[0026] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that these terms, for example, as defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of this disclosure. In this disclosure, electronic devices may include, but are not limited to, display devices, backlight devices, antenna devices, sensing devices, or splicing devices. Electronic devices may be bendable or flexible. Display devices may be non-emissive or emissive display devices. Antenna devices may be liquid crystal type antenna devices or non-liquid crystal type antenna devices, and sensing devices may be sensing capacitive, light, heat, or ultrasonic waves, but are not limited to these. In this disclosure, electronic components may include passive and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. Diodes may include light-emitting diodes or photodiodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, or quantum dot LEDs, but are not limited thereto. The following description uses display devices as examples of electronic devices or splicing devices to illustrate the contents of this disclosure, but this disclosure is not limited thereto.

[0027] It should be noted that the technical solutions provided in the different embodiments below can be substituted for, combined or mixed with each other to constitute another embodiment without violating the spirit of this disclosure.

[0028] In some embodiments disclosed herein, terms such as “connection” and “interconnection”, unless specifically defined, may refer to two structures in direct contact, or to two structures not in direct contact, wherein another structure is disposed between the two structures. Terms such as “connection” and “interconnection” may also include cases where both structures are movable or both structures are fixed. Furthermore, the terms “electrical connection” and “coupling” encompass any direct and indirect electrical connection means.

[0029] In the following embodiments, the same or similar elements will be referred to by the same or similar reference numerals, and their descriptions will be omitted. Furthermore, features in different embodiments can be freely mixed and matched as long as they do not violate the spirit of the invention or conflict with it, and simple equivalent changes and modifications made according to this specification or claims are still within the scope of this disclosure. Additionally, the terms "first," "second," etc., mentioned in this specification or claims are only used to name different elements or distinguish different embodiments or scopes, and are not used to limit the upper or lower limit of the number of elements, nor are they used to limit the manufacturing order or arrangement order of the elements. The X-axis, Y-axis, and Z-axis are indicated in the figures disclosed below to indicate the orientation of individual components and devices. In some embodiments, the X-axis, Y-axis, and Z-axis are mutually perpendicular, but this is not a limitation. In some other embodiments, the X-axis, Y-axis, and Z-axis may be mutually intersecting, but not necessarily perpendicular, three axes. Furthermore, the terms "first," "second," "third," etc., described below are only for the convenience of distinguishing multiple identical or similar components, features, and / or structures, and are not intended to limit the manufacturing order, stacking order, etc., of these components, features, and / or structures.

[0030] Figure 1 This is a schematic diagram of an electronic device according to an embodiment of the present disclosure. The electronic product 10 includes a plurality of splicing units 12, which are arranged adjacent to each other on a plane along the X and Y axes. In some embodiments, the plurality of splicing units 12 may be disposed on a back panel 14 and do not overlap each other. Each splicing unit 12 may be disposed on the back panel 14 by locking, attaching, or other means. These splicing units 12, when spliced ​​together, can collectively display a single image to provide a large-size display. The number of splicing units 12 can be determined according to the required size, therefore the size of the electronic product 10 is not limited to the individual size of the electronic units 12.

[0031] Figure 2 This is a partial schematic diagram of an electronic device according to an embodiment of the present disclosure. Figure 2 The electronic device 200 can be used as Figure 1 This is an implementation of a portion (e.g., a single splicing unit) of the electronic product 10, but is not limited thereto. The electronic device 200 may include electronic units 210 and functional units 220. Functional units 220 may be disposed on at least one side of the electronic unit 210. In some embodiments, multiple electronic devices 200 may be configured as splicing units spliced ​​together, such as... Figure 1The electronic product 10 includes a functional unit 220 that surrounds the electronic unit 210 and is located between two adjacent electronic devices 200. The electronic unit 210 performs functions required by the electronic device 200, such as providing a light source, displaying an image, and providing touch sensing. The functional unit 220 is located around the electronic unit 210, and in some embodiments, the functional unit 220 has suitable optical properties to improve the overall light emission and / or display effect of the electronic device 10. In some embodiments, the functional unit 220 may be disposed on at least one side of the electronic unit 210. For example, when the electronic unit 210 has a rectangular outline, the functional unit 220 may be disposed along at least one side of the rectangular outline.

[0032] Figures 3A to 3F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II, showing a particular embodiment. Figures 3A to 3F Electronic devices 200A to 200F can be used as Figure 1 One of the implementation methods for splicing unit 12. Figure 3A In the embodiment, electronic device 200A includes electronic unit 210A and functional unit 220A. Electronic unit 210A includes substrate 212A, multiple semiconductor elements 214A, and cover layer 216A. Multiple semiconductor elements 214A are disposed on substrate 212A, and cover layer 216A is disposed on semiconductor elements 214A. Substrate 212A has multiple first side surfaces, and cover layer 216A has multiple second side surfaces. Figure 3A The cross-sectional structure corresponds to Figure 2 The line I-I' is used for illustration, therefore only one of the first side surfaces S1A of the substrate 212A and one of the second side surfaces S2A of the cover layer 216A are shown. Functional unit 220A is disposed on the first side surface S1A and the second side surface S2A. In some embodiments, functional unit 220A may be disposed on at least one of at least one of the plurality of first side surfaces of the substrate 212A and at least one of the plurality of second side surfaces of the cover layer 216A. For example, functional unit 200A may be disposed only on the first side surface S1A or only on the second side surface S2A.

[0033] In this embodiment, the functional unit 220A can directly contact the first side surface S1A and the second side surface S2A. The functional unit 220A may include a light-adjusting layer 222A, which can be used to adjust the light traveling to the periphery and / or edge of the electronic device 200A. In some embodiments, the light-adjusting layer 222A for the functional unit 220A may be a non-transparent layer with low light transmittance. For example, the light-adjusting layer may be a black or gray light-shielding layer, a reflective layer with reflective properties (e.g., a white reflective layer), a filter layer (e.g., a color filter layer), or other films with low transmittance. In this embodiment, the extension length L220A of the functional unit 220A in the thickness direction (e.g., the Z-axis direction) of the substrate 212A may be approximately equal to the sum of the thickness T212A of the substrate 212A and the thickness T216A of the cover layer 216A. In other embodiments, the extension length L220A may be less than the sum of the thicknesses T212A and T216A. In addition, functional unit 220A may also include other elements in some embodiments, not limited to the light modulation layer.

[0034] In some embodiments, semiconductor element 214A can be a light-emitting element. For example, semiconductor element 214A can be a light-emitting diode, such as an organic light-emitting diode (OLED), a mini LED, a micro LED, or a quantum dot LED. When light emitted from semiconductor element 214A travels to at least one of the first side surface S1A and the second side surface S2A, it may be refracted or scattered, resulting in bright lines at the edges of electronic device 200A, which can also be understood as edge light leakage. At this time, the light-blocking effect of the light-adjusting layer 222A of functional unit 220A can block these refracted or scattered light, thereby helping to reduce the light leakage phenomenon at the edges of electronic device 200A and improve display quality and / or luminous quality. When electronic device 200A is applied to, for example, Figure 1 When the electronic product 10 is used, due to the setting of the functional unit 220A, there will be no bright lines at the seams between adjacent splicing units 12 (electronic devices 200A) that are higher than expected, which helps to improve the overall display uniformity and display quality.

[0035] Figure 3B The electronic device 200B is roughly the same as Figure 3A The electronic device 200A is identical to that of the other device, therefore the same component symbols are used to represent the same components in both embodiments. The electronic device 200B includes an electronic unit 210A and a functional unit 220B, wherein the configuration of the functional unit 220B differs from that of the other device. Figure 3AFunctional unit 220A. In this embodiment, functional unit 220B is disposed on the first side surface S1A of substrate 212A and on the second side surface S2A of cover layer 216A. Simultaneously, the extension length L220B of functional unit 220B in the thickness direction (Z-axis direction) of substrate 212A is less than the sum of the thickness T212A of substrate 212A and the thickness T216A of cover layer 216A. Thus, cover layer 216A has an upper surface U216A and a lower surface B216A, and a section S2A1 of the second side surface S2A of cover layer 216A near the upper surface U216A is not covered by functional unit 220B, while a section S2A2 near the lower surface B216A is covered by functional unit 220B. Functional unit 220B includes a light-adjusting layer 222B, the material of which is similar to the aforementioned light-adjusting layer 222A. When light emitted from semiconductor element 214A shines on section S2A1 of the second side surface S2A, it can be refracted and / or scattered, while light shining on section S2A2 of the second side surface S2A and the first side surface S1A is blocked. In this way, some light can still be emitted from the side edge of electronic device 200B, which helps to maintain a certain brightness at the side edge and improve the brightness uniformity of the overall electronic device 200B.

[0036] Figure 3C The electronic device 200C is roughly the same as Figure 3A The electronic device 200A is identical to that of the other device, therefore the same component symbols are used to represent the same components in both embodiments. Specifically, the electronic device 200C includes an electronic unit 210A and a functional unit 220C, wherein the configuration of the functional unit 220C differs from that of the other device. Figure 3A Functional unit 220A. In this embodiment, functional unit 220C is disposed on the second side surface S2A of cover layer 216A. The first side surface S1A of substrate 212A is not covered by functional unit 220C. At the same time, the extension length L220C of functional unit 220C in the thickness direction of substrate 212A is less than the thickness T216A of cover layer 216A. A section S2A1 of the second side surface S2A of cover layer 216A near the upper surface U216A is not covered by functional unit 220C, while a section S2A2 near the lower surface B216A is covered by functional unit 220C. Functional unit 220C includes light-adjusting layer 222C, and the characteristics and materials of light-adjusting layer 222C can be referred to Figure 3A Light modulation layer 222A.

[0037] Figure 3D The electronic device 200D is roughly the same as Figure 3A The electronic device 200A is identical to that of the other device, therefore the same component symbols are used to represent the same components in both embodiments. Specifically, the electronic device 200D includes an electronic unit 210A and a functional unit 220D, wherein the shape of the functional unit 220D is different from that of the other device. Figure 3A Functional unit 220A. In this embodiment, the cover layer 216A has an upper surface U216A and a lower surface B216A. The thickness T220D of the functional unit 220D near the upper surface U216A is thinner than the thickness T220D of the functional unit 220D near the lower surface B216A. In other words, the functional unit 220D has a thinned portion P220D that is closer to the upper surface U216A than other portions. The functional unit 220D includes a light-modulating layer 222D, and the characteristics and materials of the light-modulating layer 222D can be referred to Figure 3A The light-adjusting layer 222A is used. Because of its thinner thickness, the thinned portion P220D has higher light transmittance compared to other portions. Therefore, when light emitted from the semiconductor element 214A reaches the second side surface S2A, it can partially penetrate the thinned portion P220D, which helps maintain a certain level of brightness at the edges of the electronic device 200D and improves the brightness uniformity of the electronic device 200D. In some embodiments, the thinned portion P220D may have an arcuate surface or an inclined surface that is tilted relative to the second side surface S2A.

[0038] Figure 3E The electronic device 200E is roughly the same as Figure 3B The electronic device 200B is identical to the electronic device 200B; therefore, the same component symbols are used to represent the same components in both embodiments. Specifically, the electronic device 200E includes an electronic unit 210A and a functional unit 220E, wherein the shape of the functional unit 220E is different. Figure 3B Functional unit 220B. In this embodiment, functional unit 220E has a thinned portion P220E that is closer to the upper surface U216A of the cover layer 216A than other portions. Functional unit 220E includes a light-modulating layer 222E, and the characteristics and materials of the light-modulating layer 222E can be referred to Figure 3A The light-adjusting layer 222A is used. The thickness T220E of the functional unit 220E is thinner as it approaches the upper surface U216A of the cover layer 216A. As a result, the second side surface S2A of the cover layer 216A, except for the section S2A1 not covered by the functional unit 220E which is translucent, also has some translucency in the section S2A2 covered by the thinned portion P220E. Therefore, the electronic device 200E can still have a certain brightness at the edges, which helps maintain ideal brightness uniformity.

[0039] Figure 3F The electronic device 200F is roughly the same as Figure 3C The electronic device 200C is identical to the electronic device 200F; therefore, the same component symbols are used to represent the same components in both embodiments. Specifically, the electronic device 200F includes an electronic unit 210A and a functional unit 220F, wherein the shape of the functional unit 220F is different from that of the electronic device 200C. Figure 3CFunctional unit 220C. Functional unit 220F includes light modulation layer 222F, and the characteristics and materials of light modulation layer 222F can be found in [reference]. Figure 3A The light-adjusting layer 222A is used. In this embodiment, the functional unit 220F has a thinned portion P220F that is closer to the upper surface U216A of the cover layer 216A than other portions. For example, the thickness T220F of the functional unit 220F is thinner the closer it is to the upper surface U216A of the cover layer 216A. As a result, the second side surface S2A of the cover layer 216A, except for the section S2A1 not covered by the functional unit 220F which is translucent, also has some translucency in the section S2A2 covered by the thinned portion P220F. Therefore, the electronic device 200F can still have a certain brightness at the edges, which helps to maintain ideal brightness uniformity.

[0040] above Figures 3A to 3F In some embodiments, functional units 220A-220F contact at least one of the first side surface S1A and the second side surface S2A. In some embodiments, when the substrate 212A and the cover layer 216A are polygonal and each has multiple first side surfaces S1A and multiple second side surfaces S2A, the functional units 220A-220F contact at least one of the multiple first side surfaces S1A and at least one of the multiple second side surfaces S2A.

[0041] Figures 4A to 4F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II, showing a particular embodiment. Figures 4A to 4F Electronic devices 300A to 300F can be used as Figure 1 One of the splicing units 12 is implemented in this way. Figures 4A to 4F The electronic devices 300A to 300F are roughly similar to Figures 3A to 3F The electronic devices 200A to 200F are such that the same element symbols can be used to represent the same components in these embodiments, and the specific features of these same or similar components can be referenced to each other. Figures 4A to 4F The electronic devices 300A to 300F all include an electronic unit 210A, and the electronic unit 210A may include a substrate 212A, a semiconductor element 214A, and a cover layer 216A.

[0042] Figure 4AThe electronic device 300A further includes a functional unit 320A, which includes a light-modulating layer 222A and an antistatic layer 324. Specifically, the antistatic layer 324 can contact the first side surface S1A of the substrate 212A and the second side surface S2A of the cover layer 216A. The light-modulating layer 222A is disposed on the antistatic layer 324. Thus, the antistatic layer 324 is disposed between the light-modulating layer 222A and the electronic unit 210A. In this embodiment, the structural features such as the extension length of the light-modulating layer 222A are approximately the same as those of the electronic unit 210A. Figure 3A The functional unit is the same as 220A, therefore Figure 3A The corresponding description of functional unit 220A can be applied to light modulation layer 222A.

[0043] Figure 4B The electronic device 300B also includes a functional unit 320B, which comprises a light-modulating layer 222B and an antistatic layer 324. Specifically, the configuration relationship between the antistatic layer 324 and the light-modulating layer 222B can be referred to... Figure 4A The description will not be repeated. Thus, the antistatic layer 324 is disposed between the light-modulating layer 222B and the electronic unit 210A. In this embodiment, the structural features such as the extension length of the light-modulating layer 222B are approximately the same as... Figure 3B The functional unit 220B is the same, therefore Figure 3B The corresponding description of functional unit 220B can be applied to light modulation layer 222B.

[0044] Figure 4C The electronic device 300C also includes a functional unit 320C, which includes a light-modulating layer 222C and an antistatic layer 324. Specifically, the antistatic layer 324 is disposed between the light-modulating layer 222C and the electronic unit 210A. In this embodiment, the structural features such as the extension length of the light-modulating layer 222C are approximately the same as those of the electronic unit 210A. Figure 3C The functional unit 220C is the same, therefore Figure 3C The corresponding description of functional unit 220C can be applied to light modulation layer 222C.

[0045] Figure 4D The electronic device 300D also includes a functional unit 320D, which includes a light-modulating layer 222D and an antistatic layer 324. Specifically, the antistatic layer 324 is disposed between the light-modulating layer 222D and the electronic unit 210A. In this embodiment, the structural features such as the extension length of the light-modulating layer 222D are approximately the same as those of the electronic unit 210A. Figure 3D The functional unit 220D is the same, therefore Figure 3D The corresponding description of functional unit 220D can be applied to light modulation layer 222D.

[0046] Figure 4EThe electronic device 300E also includes a functional unit 320E, which includes a light-modulating layer 222E and an antistatic layer 324. Specifically, the antistatic layer 324 is disposed between the light-modulating layer 222E and the electronic unit 210A. In this embodiment, the structural features such as the extension length of the light-modulating layer 222E are approximately the same as those of the electronic unit 210A. Figure 3E The functional unit 220E is the same, therefore Figure 3E The corresponding description of functional unit 220E can be applied to light modulation layer 222E.

[0047] Figure 4F The electronic device 300F also includes a functional unit 320F, which comprises a light-modulating layer 222F and an antistatic layer 324. Specifically, the antistatic layer 324 is disposed between the light-modulating layer 222F and the electronic unit 210A. In this embodiment, the structural features such as the extension length of the light-modulating layer 222F are approximately the same as those of the electronic unit 210A. Figure 3F The functional unit is the same as 220F, therefore Figure 3F The corresponding description of functional unit 220F can be applied to light modulation layer 222F.

[0048] Figures 4A to 4F The described antistatic layer 324 may be made of polytetrafluoroethylene (Teflon), high-density polyethylene (HDPE), or similar organic compounds. In some embodiments, the antistatic layer 324 may contain suitable particles such as conductive particles or dielectric particles with sufficient dielectric strength. The light-modulating layers 222A to 222F may include the material of the functional units 220A to 220F in the aforementioned embodiments. For example, the light-modulating layers 222A to 222F may have low light transmittance. In some embodiments, the light-modulating layers 222A to 222F may be, for example, black or gray light-shielding layers, light-shielding layers with reflective properties (e.g., white reflective layers), light-filtering layers (e.g., color light-filtering layers), or other films with low transmittance. In addition, in some embodiments, the light-modulating layers 222D to 222F may have a non-uniform thickness structure, with a thickness that is thinner closer to the upper surface U216A of the cover layer 216A.

[0049] Figures 5A to 5F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II, showing a particular embodiment. Figures 5A to 5F Electronic devices 400A to 400F can be used as Figure 1 One of the splicing units 12 is implemented in this way. Figures 5A to 5F The electronic devices 400A to 400F are roughly similar Figures 4A to 4FThe electronic devices 300A to 300F are such that the same element symbols can be used to represent the same components in these embodiments, and the specific features of these same or similar components can be referenced to each other.

[0050] Specifically, Figure 5A The electronic device 400A includes an electronic unit 210A and a functional unit 420A, wherein the functional unit 420A is different from... Figure 4A The functional unit 320A is characterized in that the light adjustment layer 222A of the functional unit 420A is disposed between the antistatic layer 324 and the electronic unit 210A. Figure 5B The electronic device 400B includes an electronic unit 210A and a functional unit 420B, wherein the functional unit 420B is different from... Figure 4B The functional unit 320B is characterized in that the light adjustment layer 222B of the functional unit 420B is disposed between the antistatic layer 324 and the electronic unit 210A. Figure 5C The electronic device 400C includes an electronic unit 210A and a functional unit 420C, wherein the functional unit 420C is different from... Figure 4C The functional unit 320C is characterized in that the light adjustment layer 222C of the functional unit 420C is disposed between the antistatic layer 324 and the electronic unit 210A. Figure 5D The electronic device 400D includes an electronic unit 210A and a functional unit 420D, wherein the functional unit 420D is different from... Figure 4D The functional unit 320D is characterized in that the light adjustment layer 222D of the functional unit 420D is disposed between the antistatic layer 324 and the electronic unit 210A. Figure 5E The electronic device 400E includes an electronic unit 210A and a functional unit 420E, wherein the functional unit 420E is different from... Figure 4E The functional unit 320E is characterized in that the light-adjusting layer 222E of the functional unit 420E is disposed between the antistatic layer 324 and the electronic unit 210A. Figure 5F The electronic device 400F includes an electronic unit 210A and a functional unit 420F, wherein the functional unit 420F is different from... Figure 4F The functional unit 320F is characterized in that the light-adjusting layer 222F of the functional unit 420F is disposed between the antistatic layer 324 and the electronic unit 210A.

[0051] Figures 6A to 6F For respectively Figure 2 A partial cross-sectional schematic diagram of an electronic device along line II, showing a particular embodiment. Figures 6A to 6F Electronic devices 500A to 500F can be used as Figure 1 One of the implementation methods for splicing unit 12. Figure 6AIn the embodiment, electronic device 500A includes electronic unit 210A and functional unit 520A. Electronic unit 210A includes substrate 212A, multiple semiconductor elements 214A, and capping layer 216A, and the specific features of electronic unit 210A can be found in [reference needed]. Figure 3A The embodiments described herein will not be repeated. Figure 6A The cross-sectional structure corresponds to Figure 2 The line I-I' is used for illustration, therefore only one of the first side surfaces S1A of the substrate 212A and one of the second side surfaces S2A of the cover layer 216A are shown. A functional unit 520A is disposed on the first side surface S1A and the second side surface S2A. The functional unit 520A may include a light adjustment element 522A, which is disposed between the substrate 212A and the cover layer 216A.

[0052] like Figure 6A As shown, the second side surface S2A of the cover layer 216A has a segment S2A1 that is substantially aligned with the first side surface S1A of the substrate 212A and close to the upper surface U216A, and a segment S2A2 that is recessed relative to the first side surface S1A and close to the lower surface B216A. The outer surface S3A of the light-adjusting element 522A may be aligned with at least one of the segments S2A1 of the first side surface S1A and the second side surface S2A. The light-adjusting element 522A may be located on the segment S2A2 of the second side surface S2A, and the inner surface S4A of the light-adjusting element 522A may coincide with the segment S2A2 of the second side surface S2A. Thus, the segment S2A1 of the second side surface S2A, the outer surface S3A, and the first side surface S1A define the side of the electronic device 500A. Furthermore, the thickness T522A of the light-adjusting element 522A can be less than the thickness T216A of the portion of the cover layer 216A covering the semiconductor element 214A, where the thickness T216A is, for example, the distance between the upper surface U216A and the lower surface B216A, but is not limited thereto. Thus, the segment S2A1 of the second side surface S2A of the cover layer 216A is not covered by the functional unit 520A.

[0053] In some embodiments, the material and characteristics of the light adjustment element 522A can refer to the light adjustment layers 222A to 222F in the aforementioned embodiments. In other words, the light adjustment element 522A may have low light transmittance. The light emitted by the semiconductor element 214A is blocked by the light adjustment element 522A in the segment S2A2 of the second side surface S2A and is refracted or scattered in the segment S2A1 of the second side surface S2A and transmitted out. Therefore, the edge light leakage of the electronic device 500A can be reduced, and the edge of the electronic device 500A can present a certain degree of brightness, which helps to provide better brightness uniformity in the application of spliced ​​products. In this embodiment, the light adjustment element 522A has a rectangular shape in cross-section, so the segment S2A2 of the second side surface S2A and the outer surface S3A of the light adjustment element 522A can be approximately parallel, but are not limited thereto.

[0054] Figure 6B Electronic device 500B and Figure 6C The electronic device 500C is roughly the same as Figure 6A The electronic device 500A, therefore, in these embodiments, the same component symbol table refers to the same components and can be referenced to each other. Figure 6B In the electronic device 500B, a segment S2A2 of the second side surface S2A of the cover layer 216A is inclined relative to a segment S2A1 of the second side surface S2A, and the light-adjusting element 522B of the functional unit 520B has a trapezoidal shape. The inner surface S4B of the light-adjusting element 522B coincides with a segment S2A2 of the second side surface S2A and is inclined relative to the outer surface S3A. Figure 6C In the electronic device 500C, the second side surface S2A of the cover layer 216A, segment S2A2, is arc-shaped. The inner side surface S4C of the light-adjusting element 522C coincides with segment S2A2 of the second side surface S2A and is also arc-shaped. The light-adjusting elements 522B and 522C, for example, have a width that becomes narrower the further away from the substrate 212A in the cross-sectional structure.

[0055] Figures 6D to 6F Electronic devices 500D to 500F are similar to electronic devices 500A to 500C, respectively; therefore, descriptions of the same component symbols in these embodiments can be referred to each other. Specifically, electronic device 500D includes another functional unit 520D in addition to electronic device 500A, electronic device 500E includes another functional unit 520D in addition to electronic device 500B, and electronic device 500F includes another functional unit 520D in addition to electronic device 500C. Here, functional unit 520D can be implemented, for example, by any one of the functional units 220A to 220F and 320A to 320F of the aforementioned embodiments.

[0056] Figure 7This is a partial cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure. Figure 7 The presented cross-sectional structure can correspond to Figure 1 An exemplary embodiment that crosses the cross section of two adjacent splicing units 12. Figure 7 In this embodiment, the electronic device 600 includes multiple electronic units 210A, multiple functional units 620, and a backplane 630. The components of the electronic units 210A, their arrangement, materials, and characteristics can be referred to the description in the foregoing embodiments. Figure 7 Components with the same symbols as those in the aforementioned figures are the same and will not be repeated here. Electronic unit 210A is disposed on back plate 630, that is, back plate 630 is disposed below electronic unit 210A. Functional units 620 are disposed on their respective electronic units 210A. Functional units 620 may be disposed on the first side surface S1A of the substrate 212A of the corresponding electronic unit 210A, but are not limited thereto. Functional units 620 are located between two adjacent electronic units 210A. Figure 7 The X-axis and Y-axis in the diagram are used to illustrate the arrangement relationship between components. In some embodiments, the X-axis and Y-axis can be axes that are perpendicular to each other or intersect each other.

[0057] In this embodiment, the back plate 630 has, for example, a first surface S5, a second surface S6, and a side surface S7 between the first surface S5 and the second surface S6. The first surface S5 and the second surface S6 are located at different heights, and the side surface S7 connects the first surface S5 and the second surface S6 to form a step GP. The side surface S7 can be a sloped surface or a curved surface. For example, the distance in the Z-axis direction between the extension line of the first surface S5 extending along the Y-axis and the extension line of the second surface S6 extending along the Y-axis can be the step GP. In some embodiments, the Z-axis can be parallel to the thickness direction of the back plate 630. Figure 7 Two electronic units 210A are respectively disposed on the first surface S5 and the second surface S6. For the electronic unit 210A located on the first surface S5, the side surface S7 and at least a portion of the functional element 620 on the electronic unit 210A can overlap in the Z-axis direction of the back plate 630. For the electronic unit 210A located on the second surface S6, the side surface S7 and at least a portion of the functional element 620 on the electronic unit 210A can overlap in the Y-axis direction of the back plate 630. Figure 7 The two electronic units 210A are at different heights, allowing adjacent functional units 620 to be closer together, thus reducing the distance between them. In this way, when applied to spliced ​​products, the visibility of the splicing gaps can be reduced, improving the overall visual effect of the product. For example, the images presented by two adjacent electronic units 210A can have better continuity due to the reduced distance mentioned above.

[0058] Functional unit 620 may include a light-adjusting layer, which, for example, has certain light-reflective properties, helps to adjust the brightness between adjacent electronic units 210A. In some embodiments, the material of the light-adjusting layer of functional unit 620 may be a light-colored (e.g., white) ink or a similar material. In some embodiments, the material of the light-adjusting layer of functional unit 620 may refer to the light-adjusting layer of the foregoing embodiments. In other words, the functional element 620 disposed on each electronic unit 210A may be replaced by any functional unit of the foregoing embodiments, without being limited to... Figure 7 The components shown are limited to those shown.

[0059] Figure 8 This is a schematic diagram of the cross-sectional structure of the substrate of the electronic unit of some embodiments disclosed herein. Figure 8 Substrates 212A to 212I can be applied to the electronic unit 210A in any of the aforementioned embodiments. Each of substrates 212A to 212I has an upper surface U212 and a lower surface B212 opposite each other in the Z-axis direction. When applied to the aforementioned embodiments, semiconductor element 214A and capping layer 216A can be disposed on the upper surface U212. Furthermore, substrates 212A to 212I have different types of first side surfaces S1A to S1I connected between the upper surface U212 and the lower surface B212.

[0060] The first side surface S1A of substrate 212A extends, for example, along the Z-axis. The first side surface S1B of substrate 212B is inclined relative to the Z-axis, causing the upper surface U212 to be recessed relative to the lower surface B212. The first side surface S1C of substrate 212C is inclined relative to the Z-axis, causing the upper surface U212 to bulge relative to the lower surface B212. The first side surface S1D of substrate 212D includes a segment S1D1 near the upper surface U212 and a segment S1D2 near the lower surface B212, wherein segment S1D1 is inclined relative to the Z-axis and segment S1D2 is approximately parallel to the Z-axis. Thus, the upper surface U212 of substrate 212D is recessed relative to the lower surface B212, and substrate 212D forms a chamfer between segment S1D1 and the upper surface U212. The first side surface S1E of substrate 212E includes a segment S1E1 near the upper surface U212 and a segment S1E2 near the lower surface B212, wherein segment S1E1 is generally parallel to the Z-axis while segment S1E2 is inclined relative to the Z-axis. Furthermore, the lower surface B212 of substrate 212E is recessed relative to the upper surface U212. Thus, substrate 212E forms a chamfer between segment S1E1 and the lower surface B212. The first side surface S1F of substrate 212F includes a segment S1F1 near the upper surface U212, a segment S1F2 near the lower surface B212, and a segment S1F3 between segments S1F1 and S1F2. Segments S1F1 and S1F2 are both inclined relative to the Z-axis, while segment S1F3 is generally parallel to the Z-axis. Furthermore, the upper surface U212 and lower surface B212 of substrate 212F are further away from segment S1F3 in the Y-axis direction relative to segments S1F1 and S1F2. Thus, substrate 212F forms a chamfer between segment S1F3 and the upper surface U212, and also between segment S1F3 and the lower surface B212. The first side surface S1G of substrate 212G includes segment S1G1 near the upper surface U212 and segment S1G2 near the lower surface B212, wherein segment S1G1 is arc-shaped and segment S1G2 is approximately parallel to the Z-axis. Thus, the upper surface U212 of substrate 212G is recessed relative to the lower surface B212, and substrate 212G forms an R-angle between segment S1G2 and the upper surface U212. The first side surface S1H of substrate 212H includes a segment S1H1 near the upper surface U212 and a segment S1H2 near the lower surface B212, wherein segment S1H1 is approximately parallel to the Z-axis and segment S1H2 is arc-shaped. Thus, the lower surface B212 of substrate 212H is recessed relative to the upper surface U212, and substrate 212H forms an R-angle between segment S1H1 and the lower surface B212. The first side surface S1I of substrate 212I includes a segment S1I1 near the upper surface U212, a segment S1I2 near the lower surface B212, and a segment S1I3 between segments S1I1 and S1I2. Segments S1I1 and S1I2 are both arc-shaped, while segment S1I3 is approximately parallel to the Z-axis.Furthermore, the upper surface U212 and the lower surface B212 of the substrate 212I are further away from the segment S1I3 in the Y-axis direction relative to the segments S1I1 and S1I2. Thus, the substrate 212I forms an R-angle between the segment S1I3 and the upper surface U212, and also forms an R-angle between the segment S1I3 and the lower surface B212.

[0061] Figure 9 This is a partial schematic diagram of the substrates of two adjacent electronic units in some embodiments disclosed herein. Substrates 212J and 212K are substrates for two adjacent electronic units, and the first side surface S1J of substrate 212J corresponds to the first side surface S1K of substrate 212K. For example, the first side surface S1J and the first side surface S1K are inclined relative to the Z-axis and are substantially parallel to each other. The first side surface S1L of substrate 212L and the first side surface S1M of substrate 212M are both substantially "<" shaped and correspond to each other. The first side surface S1N of substrate 212N and the first side surface S1O of substrate 212O are both substantially arc-shaped and correspond to each other. Figure 9 The correspondence between the shapes of the first side surfaces of adjacent substrates is merely illustrative. In some embodiments, the first side surfaces of the substrates may have various shapes. For example, the cross-sectional structure of the first side surface of the substrate may have right angles, C-shaped chamfers, R-angles, arcuate profiles, regular shapes, or irregular shapes.

[0062] Figure 10 This is a perspective view of an electronic device according to an embodiment of the present disclosure. The electronic device 700 includes an electronic unit 710, wherein the electronic unit 710 includes a substrate 212A, a plurality of semiconductor elements (not shown), and a cover layer 716. Because... Figure 10 The electronic device 700 has an appearance, and semiconductor components are disposed between the substrate 212A and the cover layer 716. Figure 10 Semiconductor elements are not shown. However, the arrangement of semiconductor elements between substrate 212A and capping layer 716 can be referred to the aforementioned embodiment. In this embodiment, substrate 212A has a first side surface S1A, capping layer 716 has a second side surface S8, and the second side surface S8 has a chamfered structure RS.

[0063] Specifically, the first side surface S1A has an extending direction E1, and the chamfered structure RS has a third side surface S81 that is not parallel to the extending direction E1. Furthermore, the chamfered structure RS also has a fourth side surface S82 that is parallel to the extending direction E1, and the area AS81 of the third side surface S81 is greater than 10% of the sum of the areas AS81 of the third side surface S81 and AS82 of the fourth side surface S82. In other words, the second side surface S8 can be understood as the surface connecting the upper surface U716 and the lower surface B716 of the cover layer 716, and can be composed of the third side surface S81 and the fourth side surface S82. In other embodiments, the area AS81 of the third side surface S81 is, for example, 100% of the sum of the areas AS81 of the third side surface S81 and AS82 of the fourth side surface S82. That is, the second side surface S8 may not include the fourth side surface S82, but is composed of the third side surface S81 that is inclined relative to the extending direction E1. Furthermore, the extending direction E1 and the third side surface S81 have an angle AR, and the angle AR is from 1 degree to 60 degrees, but is not limited thereto. In some embodiments, the area of ​​the so-called side surface is, for example, selected from the side lengths of two, three or more sides of the substrate 212A in the top view as the base of the area, and the average length of the side surface is measured in the cross section (e.g., Figure 10 The length of the third side surface S81 (LS81) or the length of the fourth side surface S82 (LS82) is used as the height of the area. The area of ​​the corresponding side surface is then obtained by multiplying the base of the area by the height. Furthermore, in this disclosure, "parallel" refers to two linear directions / structures intersecting at 0 to 10 degrees, or 0 to 5 degrees.

[0064] The following describes various chamfer patterns of the overlay as illustrative examples, but the chamfering of the overlay is not limited to these illustrative examples. Figures 11A to 11J This is a partial cross-sectional schematic diagram of an electronic device that discloses some embodiments. Figures 11A to 11J The electronic devices 800A to 800J each include electronic units 810A to 810J. Each electronic unit 810A to 810J includes a substrate 212A and a plurality of semiconductor elements 214A. The substrate 212A and semiconductor elements 214A can be referred to in the aforementioned embodiments, and will not be repeated here. In addition, each electronic unit 810A to 810J also includes a cover layer 816A to 816J disposed on the semiconductor element 214A, wherein the cover layers 816A to 816J have different structures.

[0065] In the electronic unit 810A of the electronic device 800A, the cover layer 816A has an upper surface U816, a lower surface B816, and a second side surface S8A connecting the upper surface U816 and the lower surface B816. In a top view (not shown), the cover layer 816A may be polygonal in shape, and therefore may have multiple second side surfaces S8A. Figure 11A The cross-section only shows one example. The end of the second side surface S8A adjacent to the lower surface B816 can contact the first side surface S1A of the substrate 212A, but is not limited thereto. The second side surface S8A may have a chamfered structure. For example, the second side surface S8A may be inclined relative to the first side surface S1A. Furthermore, as Figure 11A As shown, the second side surface S8A is further inward from the lower surface B816 than the first side surface S1A, and the entire second side surface S8A overlaps the substrate 212A (or lies within the area of ​​the substrate 212A) in the Z-axis direction. The inclined second side surface S8A and the extending direction E1 of the first side surface S1A form an angle CA, which is, for example, 1 degree to 60 degrees. The region of the angle CA (e.g., the region surrounded by the side surface S8A and the extending direction E1) does not contain the cover layer 816A, thus forming what is referred to herein as a negative chamfer.

[0066] Figure 11B In the electronic device 800B, the cover layer 816B of the electronic unit 810B has a chamfered structure on the second side surface S8B. The second side surface S8B can be divided into side surface S8B1 and side surface S8B2, where side surface S8B1 is closer to the upper surface U816 and side surface S8B2 is closer to the lower surface B816. The first side surface S1A has an extending direction E1, and the chamfered structure has a side surface S8B1 that is not parallel to the extending direction E1, wherein the extending direction E1 and the side surface S8B1 form an angle CB, and the angle CB is, for example, 1 degree to 60 degrees. In this embodiment, the cover layer 816B may have a negative chamfered structure on the second side surface S8B. For example, the area where the side surface S8B2 is further away from the lower surface B816 and more recessed relative to the first side surface S1A, and where the angle CB is formed (e.g., the area surrounded by the side surface S8B1 and the extending direction E1), does not contain the cover layer 816B. In addition, the side surface S8B2 of the second side surface S8B can be approximately parallel to the extension direction E1 of the first side surface S1A, but is not limited thereto.

[0067] In the electronic unit 810C of the electronic device 800C, the second side surface S8C of the cover layer 816C may have a chamfered structure. For example, the second side surface S8C may be inclined relative to the extending direction E1 of the first side surface S1A. Furthermore, the second side surface S8C is more recessed relative to the first side surface S1A the further away from the upper surface U816, and the entire second side surface S8C overlaps the substrate 212A in the Z-axis direction (or lies within the area of ​​the substrate 212A). The inclined second side surface S8C and the extending direction E1 of the first side surface S1A have an angle CC, and the angle CC is, for example, from 1 degree to 60 degrees. The region of the angle CC (e.g., the region surrounded by the second side surface S8C and the extending direction E1) does not contain the cover layer 816C, thus constituting what is referred to herein as a negative chamfer.

[0068] Figure 11D In the electronic device 800D, the cover layer 816D has a chamfered structure on its second side surface S8D. The second side surface S8D can be, for example, divided into side surface S8D1 and side surface S8D2, where side surface S8D1 is closer to the upper surface U816 and side surface S8D2 is closer to the lower surface B816. The first side surface S1A has an extending direction E1, and the chamfered structure has a side surface S8D2 that is not parallel to the extending direction E1, wherein the extending direction E1 and the side surface S8D2 form an angle CD, and the angle CD is, for example, 1 degree to 60 degrees. In this embodiment, the second side surface S8D of the cover layer 816B overlaps the substrate 212A (or lies within the area of ​​the substrate 212A) in the Z-axis direction without extending beyond the first side surface S1A, but is not limited thereto. Furthermore, the area where the angle CD is located (e.g., the area surrounded by the side surface S8D2 and the extending direction E1) does not contain the cover layer 816D, thus forming what is referred to herein as a negative chamfer.

[0069] Figure 11E In the electronic device 800E, the cover layer 816E has a chamfered structure on the second side surface S8E. The second side surface S8E can be divided into, for example, side surface S8E1 and side surface S8E2, where side surface S8E1 is closer to the upper surface U816 and side surface S8E2 is closer to the lower surface B816. The first side surface S1A has an extending direction E1, and neither side surface S8E1 nor side surface S8E2 is parallel to the extending direction E1, thus forming two chamfers at the edge of the cover layer 816E. Side surface S8E1 can be recessed relative to the first side surface S1A as it moves further away from the lower surface B816, while side surface S8E2 can be recessed relative to the first side surface S1A as it moves closer to the lower surface B816. Side surfaces S8E1 and S8E2 can form a sharp corner. Furthermore, side surfaces S8E1 and S8E2 can overlap the substrate 212A in the Z-axis direction without exceeding the substrate 212A, but are not limited thereto. The side surface S8E1 has an angle CE1 with the extension direction E1 of the substrate 212A, while the side surface S8E2 has an angle CE2 with the extension direction E1 of the substrate 212A. Angles CE1 and CE2 are each from 1 degree to 60 degrees, but are not limited thereto. Angles CE1 and CE2 may be the same or different from each other.

[0070] exist Figure 11FIn the capping layer 816F, the second side surface S8F includes a side surface S8F1 near the upper surface U816, a side surface S8F2 near the lower surface B816, and a side surface S8F3 connecting side surface S8F1 and side surface S8F2. Side surfaces S8F1 and S8F2 are both inclined relative to the extension direction E1 of the first side surface S1A of the substrate 212A, while side surface S8F3 is approximately parallel to the extension direction E1. Side surface S8F1 has an angle CF1 with the extension direction E1 of the substrate 212A, while side surface S8F2 has an angle CF2 with the extension direction E1 of the substrate 212A. Angles CF1 and CF2 are each from 1 degree to 60 degrees, but are not limited thereto. Angles CF1 and CF2 may be the same or different from each other. The capping layer 816F does not have the angle CF1 between the extension direction E1 and side surface S8F1, nor does it have the angle CF2 between the extension direction E1 and side surface S8F2.

[0071] In the electronic unit 810G of the electronic device 800G, the second side surface S8G of the cover layer 816G may have a chamfered structure. For example, the second side surface S8G may be inclined relative to the extending direction E1 of the first side surface S1A. Furthermore, as... Figure 11G As shown, the second side surface S8G protrudes further from the lower surface B816 relative to the first side surface S1A from the extending direction E1 of the first side surface S1A. The inclined second side surface S8G and the extending direction E1 of the first side surface S1A have an angle CG, and the angle CG is, for example, 1 degree to 60 degrees. In this embodiment, the second side surface S8G at least partially extends beyond the substrate 212A in the Y-axis direction (or is located within the area of ​​the substrate 212A), and the area of ​​the angle CG (e.g., the area surrounded by the second side surface S8G and the extending direction E1) has a cover layer 816G, which constitutes what is referred to herein as a positive chamfer.

[0072] exist Figure 11H In this structure, the second side surface S8H of the cover layer 816H connects the upper surface U816 and the lower surface B816, and includes a side surface S8H1 near the upper surface U816 and a side surface S8H2 near the lower surface B816. Side surface S8H1 is parallel to the extending direction E1 of the first side surface S1A of the substrate 212A, while side surface S8H2 is inclined relative to the extending direction E1. The angle CH between the extending direction E1 and the side surface S8H2 can be from 1 degree to 60 degrees. Furthermore, the entire second side surface S8H protrudes beyond the substrate 212A along the Y-axis direction from the extending direction E1 of the first side surface S1A. Therefore, the cover layer 816H extends beyond the substrate 212A, and within the angle CH between the extending direction E1 and the side surface S8H2, a positive chamfer structure is formed at the second side surface S8H.

[0073] exist Figure 11IIn the process, the second side surface S8I of the cover layer 816I is connected between the upper surface U816 and the lower surface B816, and includes a side surface S8I1 near the upper surface U816 and a side surface S8I2 near the lower surface B816. Both side surfaces S8I1 and S8I2 are inclined relative to the extending direction E1 of the first side surface S1A of the substrate 212A. The second side surface S8I of the cover layer 816I has a pointed shape. Side surfaces S8I1 and S8I2 may extend beyond the substrate 212A in the Y-axis direction, but are not limited thereto. Side surface S8I1 has an angle CI1 with the extending direction E1 of the substrate 212A, while side surface S8I2 has an angle CI2 with the extending direction E1 of the substrate 212A. Angles CI1 and CI2 are each from 1 degree to 60 degrees, but are not limited thereto. Angles CI1 and CI2 may be the same or different from each other. The cover layer 816I has an angle CI1 between the extension direction E1 and the side surface S8I1 and an angle CI2 between the extension direction E1 and the side surface S8I2, forming two positive chamfer structures at the second side surface S8I.

[0074] exist Figure 11J In the overlay layer 816J, the second side surface S8J includes a side surface S8J1 near the upper surface U816, a side surface S8J2 near the lower surface B816, and a side surface S8J3 connecting side surface S8J1 and side surface S8J2. Side surfaces S8J1 and S8J2 are both inclined relative to the extending direction E1 of the first side surface S1A of the substrate 212A, while side surface S8J3 is approximately parallel to the extending direction E1. Side surfaces S8J1, S8J2, and S8J3 may extend beyond the substrate 212A in the Y-axis direction, but are not limited thereto. Side surface S8J1 has an angle CJ1 with the extending direction E1 of the substrate 212A, while side surface S8J2 has an angle CJ2 with the extending direction E1 of the substrate 212A. Angles CJ1 and CJ2 are each from 1 degree to 60 degrees, but are not limited thereto. Angles CJ1 and CJ2 may be the same or different from each other. The covering layer 816J has an angle CJ1 between the extension direction E1 and the side surface S8J1, and also an angle CJ2 between the extension direction E1 and the side surface S8J2, so as to form two positive chamfer structures at the second side surface S8J.

[0075] Figure 12This is a partial cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure. The electronic device 900 includes an electronic unit 910, wherein the electronic unit 910 includes a substrate 212A, a plurality of semiconductor elements 214A, and a cover layer 916. The semiconductor elements 214A disposed between the substrate 212A and the cover layer 916 can be referred to in the aforementioned embodiment. In this embodiment, the substrate 212A has a first side surface S1A, and the cover layer 916 has a second side surface S9, and the second side surface S9 has a rounded corner structure. The cover layer 916 can be... Figure 10 A variation of the cover layer 716, wherein Figure 12 The second side surface S9 is Figure 10 The second side surface S8 is modified to have a chamfer. In some embodiments, the side surfaces of the second side surfaces S8A to S8J in the above embodiments that are inclined relative to the extending direction E1 of the substrate 212A (e.g., any one of the second side surfaces S8A, S8B1, S8C, S8D2, S8E1, S8E2, S8F1 and S8F2, S8G, S8H1, S8H2, S8I1, S8I2, S8J1, and S8J2) can be modified to form an R-angle structure on the second side surfaces S8A to S8J. When any one of the second side surface S8A, side surface S8B1, second side surface S8C, side surface S8D2, side surface S8E1, side surface S8E2, side surface S8F1 and side surface S8F2, second side surface S8G, side surface S8H1, side surface S8H2, side surface S8I1, side surface S8I2, side surface S8J1, and side surface S8J2 is modified into an arc shape, it can be a concave or convex arc surface relative to the straight side surface.

[0076] Specifically, such as Figure 12As shown, the cover layer 916 has an upper surface U916, a lower surface B916, and a second side surface S9 connecting the upper surface U916 and the lower surface B916. The first side surface S1A of the substrate 212A has an extending direction E1, and the R-corner structure has a third side surface S91 that is not parallel to the extending direction E1 and a fourth side surface S92 that is parallel to the extending direction. The third side surface S91 is closer to the upper surface U916, while the fourth side surface S92 is closer to the lower surface B916. The third side surface S91 is arc-shaped in the cross-sectional structure, thus defining the R-corner structure. In this embodiment, the area of ​​the third side surface S91 can be greater than 10% of the sum of the areas of the third side surface S91 and the fourth side surface S92. In some embodiments, the area of ​​the fourth side surface S92 can be 0, that is, the R-corner structure can be composed of the arc-shaped third side surface S91. In addition, in this embodiment, the areas of the third side surface S91 and the fourth side surface S92 can be referenced. Figure 10 The method of measurement is as recorded.

[0077] In some embodiments, the endpoint T1 of the arc-shaped third side surface S91 near the upper surface U916 can be defined as follows: First, a reference point RF is selected in the cross-sectional structure by arbitrarily translating the center point CN of the electronic unit 910 along the Y-axis (to the left or right of the drawing). Next, a reference line RL is taken... Figure 12 The reference line RL passes through the average height of the center point CN and the reference point RF and is parallel to the Y-axis. The endpoint T1 of the third side surface S91 near the upper surface U916 can be the point where the arcuate profile of the third side surface S91 intersects with the reference line RL. In some embodiments, two reference points RF can be selected by translating the center point CN of the electronic unit 910 about 10 mm to the left and right along the Y-axis of the drawing plane, and then the reference line RL is drawn using the average height of the two reference points RF and the center point CN. In some embodiments, two reference points RF can be selected by translating the center point CN of the electronic unit 910 about 10 mm to the left and right along the Y-axis of the drawing plane, and then two more reference points RF can be selected by translating the center point CN of the electronic unit 910 about 20 mm to the left and right along the Y-axis of the drawing plane, and the reference line RL is drawn using the average height of the four reference points RF and the center point CN. Here, the reference line RL can be parallel to the Y-axis direction. In some embodiments, the radius of curvature of the third side surface S91 can be 0.1 to 1000 times the distance between the reference line RL and the lower surface B916, wherein the distance between the reference line RL and the lower surface B916 can also be regarded as the thickness of the cover layer 916.

[0078] The above Figures 10 to 12In the embodiments described above, the cover layers 716, 816A-816J, and 916 have a chamfered or rounded corner structure on their second side surface, which can deflect the light transmission path. Therefore, the light emission uniformity of electronic devices 700, 800A-800J, and 900 can be improved through the chamfered or rounded corner structure. When applied to spliced ​​products, adjacent spliced ​​electronic devices 700, 800A-800J, or 900 can provide a uniform brightness distribution, thus helping to improve the display quality of the product. Furthermore, the above... Figures 10 to 12 Electronic devices 700, 800A-800J and 900 may further include functional units disposed on at least one of the first side surface and the second side surface, such as... Figures 3A to 3F , Figures 4A to 4F , Figures 5A to 5F , Figures 6A to 6F and Figure 7 The functional unit described in any of the embodiments. In some embodiments, the functional unit may surround multiple side surfaces of at least one of the substrate and the cover layer. In some embodiments, the functional unit may fully or partially cover at least one of the multiple side surfaces of at least one of the substrate and the cover layer. In addition, the edge shape of the functional unit may be a right angle, a C-shaped chamfer, a rounded corner, an arc shape, an irregular shape, etc.

[0079] In summary, the electronic device disclosed in this embodiment may include functional units disposed on the side to improve the light emission uniformity of the electronic device. Furthermore, the functional units on the side of the electronic device may partially or completely cover the side surface, providing various implementation methods. In some embodiments, at least one of the substrate and the cover layer of the electronic device may have a chamfered structure, a rounded corner structure, etc., which can change the light transmission path and help improve the light emission uniformity of the electronic device.

[0080] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions disclosed herein, and are not intended to limit them. Although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments disclosed herein.

Claims

1. An electronic device, characterized in that, include: Electronic unit, including: The substrate has multiple first side surfaces; Multiple semiconductor elements are disposed on the substrate; A cover layer is disposed on the plurality of semiconductor elements and has a plurality of second side surfaces; as well as A functional unit is disposed on at least one of at least one of the plurality of first side surfaces and at least one of the plurality of second side surfaces, and the functional unit extends completely between the upper surface of the cover layer and the lower surface of the substrate, wherein the cover layer has an upper surface and a lower surface, and the thickness of the functional unit near the upper surface is thinner than the thickness of the functional unit near the lower surface.

2. The electronic device according to claim 1, characterized in that, The functional unit includes an antistatic layer.

3. The electronic device according to claim 1, characterized in that, The functional unit includes a light modulation layer.

4. The electronic device according to claim 1, characterized in that, The functional unit includes an antistatic layer and a light-modulating layer.

5. The electronic device according to claim 4, characterized in that, The antistatic layer is disposed between the electronic unit and the light modulation layer.

6. The electronic device according to claim 4, characterized in that, The light modulation layer is disposed between the electronic unit and the antistatic layer.

7. The electronic device according to claim 1, characterized in that, The functional unit is in contact with at least one of the plurality of first side surfaces and at least one of the plurality of second side surfaces.

8. The electronic device according to claim 1, characterized in that, The functional unit includes a light-adjusting element disposed between the substrate and the cover layer and on at least one of the second side surfaces.

9. The electronic device according to claim 1, characterized in that, It also includes a backplate, which is disposed below the electronic unit and has a step.

10. The electronic device according to claim 9, characterized in that, The back plate has a first surface, a second surface, and a side surface between the first surface and the second surface to form the step, and the side surface overlaps with at least a portion of the functional unit in the thickness direction of the back plate.

11. The electronic device according to claim 1, characterized in that, The substrate has a cross-sectional structure on the plurality of first side surfaces with right angles, C-shaped chamfers, R-angles, or arc-shaped profiles.

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