Pixel array, sensor and display device

Abstract

The application provides a pixel array, a sensor and a display device, relates to the technical field of intelligent devices, and is used for solving the problems of great difficulty in solving the image distortion problem and influence on the display effect of an image. The pixel array comprises a substrate and a plurality of pixel units arranged on the substrate. The pixel unit comprises a photoelectric sensing unit and a temperature sensing unit. The photoelectric sensing unit comprises a first transistor and a photodiode which are electrically connected. The temperature sensing unit comprises a second transistor and a temperature measuring diode which are electrically connected. The first transistor and the second transistor are arranged on the same layer. The photodiode and the temperature measuring diode are arranged on the same layer. The layer where the photodiode is arranged is located on the side, away from the substrate, of the layer where the first transistor is arranged. The pixel array, the sensor and the display device provided by the application reduce the difficulty in solving the image distortion problem and improve the display effect of the image.

Description

Technical Field

[0001] This application relates to the field of smart device technology, and more particularly to a pixel array, sensor, and display device. Background Technology

[0002] An optical sensor is a component that can acquire light signals and convert them into electrical signals, enabling a host computer to use the electrical signals to form a digital image. Optical sensors are widely used in display devices such as medical detection equipment, fingerprint recognition equipment, and health monitoring equipment.

[0003] Optical sensors include pixel arrays with multiple pixel units to acquire light signals through these units. When acquiring light signals using multiple pixel units and forming an image using the electrical signals generated from the light signals, image distortion is prone to occur; however, solving image distortion is difficult and affects the display quality of the image. Summary of the Invention

[0004] In view of the above problems, embodiments of this application provide a pixel array, a sensor, and a display device to reduce the difficulty of solving image distortion problems and improve the display effect of images.

[0005] To achieve the above objectives, the embodiments of this application provide the following technical solutions:

[0006] A first aspect of this application provides a pixel array, including a substrate and a plurality of pixel units disposed on the substrate;

[0007] The pixel unit includes a photoelectric sensing unit and a temperature sensing unit; the photoelectric sensing unit includes a first transistor and a photodiode electrically connected, and the temperature sensing unit includes a second transistor and a temperature sensing diode electrically connected; the first transistor and the second transistor are disposed on the same layer, the photodiode and the temperature sensing diode are disposed on the same layer, and the layer containing the photodiode is disposed on the side of the layer containing the first transistor away from the substrate.

[0008] The pixel array in this embodiment includes a pixel unit comprising a photoelectric sensing unit and a temperature sensing unit, with the first transistor and the second transistor arranged on the same layer, and the photodiode and the temperature sensing diode arranged on the same layer. This allows the photodiode to acquire light signals while the temperature sensing diode acquires temperature signals. The pixel unit can then transmit the electrical signals acquired by the photoelectric sensing unit and the temperature signals acquired by the temperature sensing unit to the host computer. When forming an image using the electrical signals, the computer can compensate for the electrical signals based on the current temperature of the pixel unit, thereby reducing the difficulty of resolving image distortion and improving the image display effect.

[0009] In one possible implementation, the photodiode includes a PIN junction for acquiring optical signals;

[0010] The temperature sensing diode includes a PN junction, which is disposed on the same layer as the PIN junction and is used to acquire temperature signals.

[0011] In one possible implementation, the pixel array further includes a functional layer and a planarization layer stacked on the substrate, wherein the functional layer is disposed on the substrate;

[0012] The first transistor and the second transistor are disposed within the functional layer, and the photodiode and the temperature-sensing diode are disposed within the planarization layer.

[0013] In one possible implementation, the functional layer includes a substrate, a gate insulating layer, an interlayer dielectric layer, and a passivation base layer stacked sequentially, wherein the surface of the passivation base layer away from the interlayer dielectric layer is electrically connected to the planarization layer.

[0014] In one possible implementation, the first transistor includes a first polysilicon, a first gate, a first source, and a first drain that cooperate with each other, and the second transistor includes a second polysilicon, a second gate, a second source, and a second drain that cooperate with each other.

[0015] The first polysilicon and the second polysilicon are disposed in the same layer on the gate insulating layer;

[0016] The output terminal of the first gate is electrically connected to the first polysilicon, and the second gate is disposed in the same layer as the first gate in the interlayer dielectric layer, and the output terminal of the second gate is electrically connected to the second polysilicon.

[0017] One of the first source and the first drain is electrically connected to the first polysilicon and the photodiode, and the other is electrically connected to the first polysilicon and is used to output an electrical signal; one of the second source and the second drain is electrically connected to the second polysilicon and the temperature sensing diode, and the other is electrically connected to the second polysilicon and is used to output an electrical signal.

[0018] In one possible implementation, a protective layer is provided on the surface of the planarization layer away from the functional layer.

[0019] A second aspect of this application provides a sensor that includes the pixel array described above;

[0020] Preferably, the sensor further includes a reading unit electrically connected to the source / drain of a plurality of first transistors and electrically connected to the source / drain of a plurality of second transistors to acquire electrical signals from the plurality of first transistors and the plurality of second transistors.

[0021] The sensor in this embodiment of the application configures the pixel unit to include a photoelectric sensing unit and a temperature sensing unit, and arranges the first transistor and the second transistor on the same layer, as well as the photodiode and the temperature sensing diode on the same layer. Therefore, when the photodiode acquires the light signal, the temperature sensing diode can also acquire the temperature signal. This allows the pixel unit to transmit the electrical signal acquired by the photoelectric sensing unit and the temperature signal acquired by the temperature sensing unit to the host computer via the reading unit. Thus, when forming an image using the electrical signal, the electrical signal can be compensated according to the current temperature of the pixel unit, thereby reducing the difficulty of solving image distortion and improving the image display effect.

[0022] In one possible implementation, the sensor further includes two driving units, one of which is electrically connected to the gates of a plurality of first transistors to send control signals to the plurality of first transistors;

[0023] Another drive unit is electrically connected to the gates of a plurality of the second transistors to send control signals to the plurality of the second transistors.

[0024] In one possible implementation, the sensor further includes a driving unit electrically connected to the gates of a plurality of first transistors and the gates of a plurality of second transistors to send control signals to the plurality of first transistors and the plurality of second transistors.

[0025] A third aspect of this application provides a display device that includes the aforementioned sensor.

[0026] This application provides a display device that includes the sensors described in any of the above claims. Therefore, the display device has the advantages of including the sensors described in any of the above claims, as can be seen in the relevant descriptions above, and will not be repeated here. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1This is a schematic diagram of a structure with pixel units provided in an embodiment of this application;

[0029] Figure 2 A circuit diagram of a pixel unit provided in an embodiment of this application;

[0030] Figure 3 A schematic diagram of a pixel circuit for a sensor with pixel units provided in an embodiment of this application;

[0031] Figure 4 The embodiments provided in this application are applicable to Figure 3 Timing diagram of the driving unit control for the pixel circuit;

[0032] Figure 5 A schematic diagram of a pixel circuit for another embodiment provided in this application;

[0033] Figure 6 The embodiments provided in this application are applicable to Figure 5 Timing diagram of the driving unit control for the pixel circuit.

[0034] Explanation of reference numerals in the attached figures:

[0035] 100. Photoelectric sensing unit;

[0036] 110. Photodiode; 120. First transistor; 121. First source; 122. First gate; 123. First drain; 124. First polysilicon;

[0037] 200. Temperature sensing unit;

[0038] 210, Temperature sensing diode; 220, Second transistor; 221, Second source; 222, Second gate; 223, Second drain; 224, Second polysilicon;

[0039] 300, substrate;

[0040] 310. Glass layer;

[0041] 400. Functional layer;

[0042] 410 Gate insulating layer; 420 Interlayer dielectric layer; 430 Passivation base layer;

[0043] 500, planarization layer;

[0044] 510. Protective layer;

[0045] 600. Reading unit;

[0046] 700, Drive Unit;

[0047] 710, First drive unit; 720, Second drive unit. Detailed Implementation

[0048] As described in the background section, when using multiple pixel units of a pixel array to acquire light signals and using the electrical signals generated by the light signals to form an image, image distortion is prone to occur; however, solving image distortion is difficult and affects the display effect of the image. The inventors of this application have discovered that the reason for this problem is that in related technologies, pixel units transmit electrical signals to a host computer, thereby using the host computer to form an image. During the image formation process, the host computer typically compares the electrical signals from the pixel units with an image calibration template to generate the image using the electrical signals.

[0049] When a pixel unit converts the acquired light signal into an electrical signal, the current temperature of the pixel unit affects the dark current within it, causing the generated electrical signal to be temperature-dependent. When the electrical signal from the pixel unit is input into the image calibration template, image distortion can easily occur because the current temperature differs from the set temperature of the image calibration template. However, since the current temperature of the pixel unit cannot be obtained, the compensation process for the electrical signal is difficult to control, making it challenging to resolve image distortion and thus affecting the image display quality.

[0050] To address the aforementioned technical problems, embodiments of this application provide a pixel array, a sensor, and a display device. The pixel array includes multiple pixel units, each comprising a photoelectric sensing unit and a temperature sensing unit. A first transistor and a second transistor are disposed on the same layer, as are a photodiode and a temperature-sensing diode. This allows the photodiode to acquire light signals while simultaneously acquiring temperature signals using the temperature-sensing diode. The pixel unit can then transmit both the electrical signals acquired by the photoelectric sensing unit and the temperature signals acquired by the temperature sensing unit to a host computer. When forming an image using these electrical signals, the current temperature of the pixel unit can be used to compensate for the electrical signals, thereby reducing the difficulty of resolving image distortion and improving the image display effect.

[0051] To make the above-mentioned objectives, features, and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0052] Reference Figure 1 and Figure 2This application provides a pixel array, including a substrate 300 and a plurality of pixel units disposed on the substrate 300; the pixel unit includes a photoelectric sensing unit 100 and a temperature sensing unit 200; the photoelectric sensing unit 100 includes a first transistor 120 electrically connected and a photodiode 110 for acquiring light signals, and the temperature sensing unit 200 includes a second transistor 220 electrically connected and a temperature sensing diode 210 for acquiring temperature signals; the first transistor 120 and the second transistor 220 are disposed on the same layer, the photodiode 110 and the temperature sensing diode 210 are disposed on the same layer, and the layer where the photodiode 110 is located is disposed on the side of the layer where the first transistor 120 is located away from the substrate 300.

[0053] In some possible implementations, the pixel array further includes a functional layer 400 and a planarizing layer 500 (PLN) stacked together; the functional layer 400 is disposed on the substrate 300 (buffer) and houses the first transistor 120 and the second transistor 220, such that the first transistor 120 and the second transistor 220 are arranged in the same layer within the functional layer 400; the planarizing layer 500 is disposed on the surface of the functional layer 400 away from the substrate 300 and houses the photodiode 110 and the temperature sensing diode 210, such that the photodiode 110 and the temperature sensing diode 210 are arranged in the same layer within the planarizing layer 500, thereby reducing the difference between the temperature signal acquired by the temperature sensing diode 210 and the current temperature of the photodiode 110.

[0054] For example, on the substrate 300, multiple pixel units are arranged in multiple rows and columns, and the first transistor 120 and the second transistor 220 of the multiple pixel units share the same functional layer 400. The photodiode 110 and the temperature sensing diode 210 of the multiple pixel units share the same planarization layer 500, so as to make the formation process of the pixel array more convenient.

[0055] Reference Figure 1 and Figure 2 In some possible implementations, the functional layer 400 includes a gate insulating layer 410 (GI), an inter-layer dielectric layer 420 (ILD), and a base passivation layer 430 (BP) stacked sequentially. The surface of the passivation base layer 430 away from the inter-layer dielectric layer 420 is connected to a planarization layer 500 to accommodate the first transistor 120 and the second transistor 220 through the functional layer 400.

[0056] For example, both the first transistor 120 and the second transistor 220 can be thin film transistors (TFTs). The first transistor 120 includes a first polysilicon 124, a first gate 122, a first source 121 and a first drain 123 that cooperate with each other. The second transistor 220 includes a second polysilicon 224, a second gate 222, a second source 221 and a second drain 223 that cooperate with each other.

[0057] Reference Figure 1 and Figure 2 The first polysilicon 124 and the second polysilicon 224 are disposed on the same layer of the gate insulating layer 410. The output terminal of the first gate 122 is electrically connected to the first polysilicon 124, and the input terminal of the first gate 122 is used to connect to the driving unit 700 to obtain an electrical signal from the driving unit 700. The second gate 222 is disposed on the same layer of the first gate 122 on the interlayer dielectric layer 420. The output terminal of the second gate 222 is electrically connected to the second polysilicon 224, and the input terminal of the second gate 222 is used to connect to the driving unit 700 to obtain an electrical signal from the driving unit 700.

[0058] One of the first source 121 and the first drain 123 is electrically connected to the first polysilicon 124 and the photodiode 110, and the other is electrically connected to the first polysilicon 124, and is used to output a photoelectric conversion signal; one of the second source 221 and the second drain 223 is electrically connected to the second polysilicon 224 and the temperature sensing diode 210, and the other is electrically connected to the second polysilicon 224, and is used to output a temperature conversion signal. For example, the first source 121 is electrically connected to the first polysilicon 124 and the photodiode 110, and the first drain 123 is electrically connected to the first polysilicon 124, and is used to output a photoelectric conversion signal converted from an optical signal to the reading unit 600; the second source 221 is electrically connected to the second polysilicon 224 and the temperature sensing diode 210, and the second drain 223 is electrically connected to the second polysilicon 224, and is used to output a temperature conversion signal converted from a temperature signal to the reading unit 600.

[0059] In some possible implementations, photodiode 110 includes a PIN junction for acquiring optical signals; temperature-sensing diode 210 includes a PN junction for acquiring temperature signals, and the PN junction and PIN junction are disposed in the same layer within the planarization layer 500 to reduce the difference between the temperature signal acquired by the PN junction in temperature-sensing diode 210 and the current temperature of photodiode 110.

[0060] A PN junction is formed by using different doping processes to fabricate P-type and N-type semiconductors on the same semiconductor substrate (usually silicon or germanium) through diffusion. The space charge region formed at the interface between the P-type and N-type semiconductors is called a PN junction. A PIN junction is formed by doping a layer of low-concentration I-type semiconductor into the PN junction.

[0061] Reference Figure 1 and Figure 2 For example, a protective layer 510 is provided on the surface of the planarization layer 500 away from the functional layer 400. The protective layer 510 can be a passivation layer (PVX) to protect the planarization layer 500, the functional layer 400, the photodiode 110 and the temperature sensing diode 210 disposed within the planarization layer 500, and the first transistor 120 and the second transistor 220 disposed within the functional layer 400 through the passivation layer covering the surface of the planarization layer 500. A glass layer 310 is also provided on the surface of the substrate 300 away from the functional layer 400 to provide a certain degree of support and protection for the substrate 300.

[0062] The pixel array provided in this application embodiment includes a pixel unit comprising a photoelectric sensing unit 100 and a temperature sensing unit 200. The first transistor 120 and the second transistor 220 are co-located on the functional layer 400, and the photodiode 110 and the temperature sensing diode 210 are co-located on the planarization layer 500. Thus, when the photodiode 110 acquires an optical signal, the temperature sensing diode 210 can also acquire a temperature signal. This allows the pixel unit to transmit the photoelectric conversion signal acquired by the photoelectric sensing unit 100 and the temperature conversion signal acquired by the temperature sensing unit 200 to the host computer. Therefore, when forming an image using electrical signals, the host computer can compensate for the electrical signal converted from the optical signal based on the current temperature of the pixel unit, thereby reducing the difficulty of solving image distortion and improving the image display effect.

[0063] Reference Figures 1-5 This application embodiment also provides a sensor, including the pixel array described in any of the above embodiments; the sensor further includes a reading unit 600, the reading unit 600 being electrically connected to the source / drain of a plurality of first transistors 120, and the reading unit 600 being electrically connected to the source / drain of a plurality of second transistors 220, to acquire electrical signals from the plurality of first transistors 120 and the plurality of second transistors 220.

[0064] For example, the first transistor 120 includes a first polysilicon 124, a first gate 122, a first source 121, and a first drain 123 that cooperate with each other, and the second transistor 220 includes a second polysilicon 224, a second gate 222, a second source 221, and a second drain 223 that cooperate with each other. The first source 121 is electrically connected to the first polysilicon 124 and the photodiode 110, and the first drain 123 is electrically connected to the first polysilicon 124, and is used to output a photoelectric conversion signal converted from an optical signal to the reading unit 600; the second source 221 is electrically connected to the second polysilicon 224 and the temperature sensing diode 210, and the second drain 223 is electrically connected to the second polysilicon 224, and is used to output a temperature conversion signal converted from a temperature signal to the reading unit 600.

[0065] The reading unit 600 is electrically connected to the first drain 123 to receive the photoelectric conversion signal from the first transistor 120, and the reading unit 600 is electrically connected to the second drain 223 to receive the temperature conversion signal from the second transistor 220, so as to transmit the photoelectric conversion signal from the first transistor 120 and the temperature conversion signal from the second transistor 220 to the host computer through the reading unit 600.

[0066] Reference Figure 3 and Figure 4 In some possible implementations, the sensor further includes two driving units 700, one of which is electrically connected to a plurality of first gates 122 to send control signals to a plurality of first transistors 120; the other driving unit 700 is electrically connected to a plurality of second gates 222 to send control signals to a plurality of second transistors 220, thereby driving the light sensing unit and the temperature sensing unit 200 respectively through the two driving units 700.

[0067] For example, the two driving units 700 are a first driving unit 710 and a second driving unit 720, respectively. The first driving unit 710 is connected to a plurality of first gates 122 to send control signals to a plurality of first transistors 120. The second driving unit 720 is connected to a plurality of second gates 222 to send control signals to a plurality of second transistors 220.

[0068] Photodiode 110 acquires an optical signal, and temperature-sensing diode 210 acquires a temperature signal. For example, the pixel units are arranged in two rows and three columns. Figure 3 In this configuration, the driving line of the first driving unit is set to GL, the driving line of the second driving unit is set to GR, the first transistor 120 is configured to be in a conducting state when the first gate 122 receives a high-level signal, and the second transistor 220 is configured to be in a conducting state when the second gate 222 receives a high-level signal. (This is in conjunction with...) Figure 4The timing diagram shown illustrates the sensor's operation process as follows:

[0069] At time T1, the first driving unit 710 sends a high-level signal to the first gate 122 of the plurality of first transistors 120. The first gate 122 receives the high-level signal, causing the first transistors 120 to be turned on. The first transistors 120 receive the photoelectric conversion signal from the photodiode 110 through the first source 121, and transmit the photoelectric conversion signal to the reading unit 600 through the first drain 123, thereby using the reading unit 600 to read the photoelectric conversion signal. The second driving unit 720 sends a low-level signal to the second gate 222 of the plurality of second transistors 220. The second gate 222 receives the low-level signal, causing the second transistors 220 to be turned off.

[0070] At time T2, the first driving unit 710 sends a low-level signal to the first gate 122 of the plurality of first transistors 120. The first gate 122 receives the low-level signal, causing the first transistors 120 to be in an off state. The second driving unit 720 sends a high-level signal to the second gate 222 of the plurality of second transistors 220. The second gate 222 receives the high-level signal, causing the second transistors 220 to be in a conducting state. The second transistors 220 receive the temperature conversion signal from the temperature sensing diode 210 through the second source 221, and transmit the temperature conversion signal to the reading unit 600 through the second drain 223, thereby using the reading unit 600 to read the temperature conversion signal.

[0071] At time T3, the first driving unit 710 sends a high-level signal to the first gate 122 of the plurality of first transistors 120. The first gate 122 receives the high-level signal, causing the first transistors 120 to be turned on. The first transistors 120 receive the photoelectric conversion signal from the photodiode 110 through the first source 121, and transmit the photoelectric conversion signal to the reading unit 600 through the first drain 123, thereby using the reading unit 600 to read the photoelectric conversion signal. The second driving unit 720 sends a low-level signal to the second gate 222 of the plurality of second transistors 220. The second gate 222 receives the low-level signal, causing the second transistors 220 to be turned off.

[0072] It is easy to understand that by setting the high-level signals emitted by the first driving unit 710 and the second driving unit 720 at staggered times, the reading unit 600 can read the photoelectric conversion signal at times such as T1, T3, and T5, and can read the temperature conversion signal at times such as T2, T4, and T6. Thus, the photoelectric conversion signal and the temperature conversion signal can be acquired periodically at staggered times through the cooperation of the first driving unit 710 and the second driving unit 720.

[0073] Reference Figure 5 and Figure 6In some possible implementations, the sensor further includes a driving unit 700 electrically connected to the gates of a plurality of first transistors 120 and the gates of a plurality of second transistors 220 to send control signals to the plurality of first transistors 120 and the plurality of second transistors 220. For example, the pixel units are arranged in two rows and three columns. Figure 5 In this configuration, the driving lines of the driving unit are configured as G1 and G2. Driving line G1 is electrically connected to the gates of multiple first transistors 120, and driving line G2 is electrically connected to the gates of multiple first transistors 220. The first transistors 120 are configured to be in a conducting state when their first gate 122 receives a high-level signal, and the second transistors 220 are configured to be in a conducting state when their second gate 222 receives a high-level signal. (This is in conjunction with...) Figure 6 The timing diagram shown illustrates the sensor's operation process as follows:

[0074] At time T1, the driving unit 700 sends a high-level signal to the first gate 122 of the plurality of first transistors 120 via the driving line G1. The first gate 122 receives the high-level signal, causing the first transistors 120 to be turned on. The first transistors 120 receive the photoelectric conversion signal from the photodiode 110 through the first source 121, and transmit the photoelectric conversion signal to the reading unit 600 through the first drain 123, thereby using the reading unit 600 to read the photoelectric conversion signal. The driving unit 700 sends a low-level signal to the second gate 222 of the plurality of second transistors 220 via the driving line G2. The second gate 222 receives the low-level signal, causing the second transistors 220 to be turned off.

[0075] At time T2, the driving unit 700 sends a low-level signal to the first gate 122 of the plurality of first transistors 120 through the driving line G1. The first gate 122 receives the low-level signal, causing the first transistors 120 to be in an off state. The driving unit 700 sends a low-level signal to the second gate 222 of the plurality of second transistors 220 through the driving line G2. The second gate 222 receives the low-level signal, causing the second transistors 220 to be in an off state.

[0076] At time T3, the driving unit 700 sends a low-level signal to the first gate 122 of the plurality of first transistors 120 through the driving line G1. The first gate 122 receives the low-level signal, causing the first transistor 120 to be in an off state. The driving unit 700 sends a high-level signal to the second gate 222 of the plurality of second transistors 220 through the driving line G2. The second gate 222 receives the high-level signal, causing the second transistor 220 to be in a conducting state. The second transistor 220 receives the temperature conversion signal from the temperature sensing diode 210 through the second source 221, and transmits the temperature conversion signal to the reading unit 600 through the second drain 223, thereby using the reading unit 600 to read the temperature conversion signal.

[0077] At time T4, the driving unit 700 sends a low-level signal to the first gate 122 of the plurality of first transistors 120 through the driving line G1. The first gate 122 receives the low-level signal, causing the first transistors 120 to be in an off state. The driving unit 700 sends a low-level signal to the second gate 222 of the plurality of second transistors 220 through the driving line G2. The second gate 222 receives the low-level signal, causing the second transistors 220 to be in an off state.

[0078] It is easy to understand that by sending control signals to multiple first transistors 120 and multiple second transistors 220 through a driving unit 700, the reading unit 600 can read photoelectric conversion signals at times such as T1, T5, and T9, and the reading unit 600 can read temperature conversion signals at times such as T3 and T7, thereby enabling the periodic acquisition of photoelectric conversion signals and temperature conversion signals through a driving unit 700 and a second driving unit 720.

[0079] The sensor in this embodiment includes a pixel unit comprising a photoelectric sensing unit 100 and a temperature sensing unit 200, with the first transistor 120 and the second transistor 220 arranged on the same layer, and the photodiode 110 and the temperature sensing diode 210 arranged on the same layer. This allows the photodiode 110 to acquire light signals while the temperature sensing diode 210 acquires temperature signals. The pixel unit can then transmit the electrical signals acquired by the photoelectric sensing unit 100 and the temperature signals acquired by the temperature sensing unit 200 to the host computer via the reading unit 600. This enables compensation of the electrical signals based on the current temperature of the pixel unit when forming an image, thereby reducing the difficulty of resolving image distortion and improving the image display effect.

[0080] This application also provides a display device that includes the aforementioned sensor. The advantages of this display device including the aforementioned sensor are detailed in the above description and will not be repeated here. The display device can be a smart wearable device, a medical detection device, a fingerprint recognition device, a planar detection device, or a self-service smart device such as a self-service vending machine.

[0081] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0082] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A sensor, comprising a pixel array, a readout unit, and a driving unit, characterized in that, The pixel array includes a substrate and a plurality of pixel units disposed on the substrate; The pixel unit includes a photoelectric sensing unit and a temperature sensing unit; the photoelectric sensing unit includes a first transistor and a photodiode electrically connected together, and the temperature sensing unit includes a second transistor and a temperature sensing diode electrically connected together. The first transistor and the second transistor are disposed on the same layer, the photodiode and the temperature sensing diode are disposed on the same layer, and the layer containing the photodiode is disposed on the side of the layer containing the first transistor away from the substrate; wherein, the first transistor and the second transistor are driven by a driving unit; and the electrical signals of the first transistor and the second transistor are acquired by a reading unit. The photodiode includes a PIN junction, which is used to acquire optical signals; The temperature sensing diode includes a PN junction, and the PN junction and the PIN junction are disposed on the same layer. The PN junction is used to acquire the temperature signal of the pixel unit. The pixel array also includes a functional layer disposed on the substrate, and a glass layer is disposed on the surface of the substrate away from the functional layer. The functional layer includes a gate insulating layer, an interlayer dielectric layer and a passivation base layer stacked sequentially, and a planarization layer is connected to the surface of the passivation base layer away from the interlayer dielectric layer. The driving unit includes a first driving unit and a second driving unit. The first driving unit includes: a plurality of first driving signal lines; the plurality of first driving signal lines extend along the row direction, each first driving signal line is electrically connected to the gate of the first transistor of all the pixel units in a row, and is electrically connected to the first driving unit. The second driving unit includes: a plurality of second driving signal lines, the plurality of second driving signal lines extending along the row direction, each second driving signal line being electrically connected to the gate of the second transistor of all the pixel units in a row, and electrically connected to the second driving unit; The readout unit is electrically connected to the source / drain of a plurality of first transistors, and the readout unit is electrically connected to the source / drain of a plurality of second transistors, so as to obtain electrical signals from the plurality of first transistors and the plurality of second transistors; The first driving unit and the second driving unit are configured to operate in a periodic staggered manner. Through the multiple first driving signal lines and multiple second driving signal lines, they periodically and staggeredly send control signals to the first transistor and the second transistor in each row of pixel units, thereby enabling the reading unit to read the photoelectric conversion signal and temperature conversion signal of all pixel units.

2. The sensor according to claim 1, characterized in that, The pixel array further includes a planarization layer disposed on the functional layer; The first transistor and the second transistor are disposed within the functional layer, and the photodiode and the temperature-sensing diode are disposed within the planarization layer.

3. The sensor according to claim 1, characterized in that, The first transistor includes a first polysilicon, a first gate, a first source, and a first drain that cooperate with each other; the second transistor includes a second polysilicon, a second gate, a second source, and a second drain that cooperate with each other. The first polysilicon and the second polysilicon are disposed in the same layer on the gate insulating layer; The output terminal of the first gate is electrically connected to the first polysilicon, and the second gate is disposed in the same layer as the first gate in the interlayer dielectric layer, and the output terminal of the second gate is electrically connected to the second polysilicon. One of the first source and the first drain is electrically connected to the first polysilicon and the photodiode, and the other is electrically connected to the first polysilicon and is used to output an electrical signal; one of the second source and the second drain is electrically connected to the second polysilicon and the temperature sensing diode, and the other is electrically connected to the second polysilicon and is used to output an electrical signal.

4. The sensor according to claim 2, characterized in that, A protective layer is provided on the surface of the planarization layer away from the functional layer.

5. A display device, characterized in that, Includes the sensor as described in any one of claims 1-4.

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