Substrate for manufacturing display device and method for manufacturing display device using the same

Abstract

A substrate for manufacturing a display device, characterized by comprising: a base portion; a plurality of assembly electrodes extending in one direction and arranged on the base portion; a dielectric layer formed on the base portion so as to cover the plurality of assembly electrodes; a partition wall portion formed on the dielectric layer; and a plurality of cells formed into a plurality of rows and columns by the partition wall portion, and a semiconductor light emitting element is disposed in the cell; the plurality of assembly electrodes extend in either of the direction of the row and the direction of the column and overlap with the plurality of cells in the direction of the extension; and the plurality of assembly electrodes include: a first assembly electrode overlapping with the plurality of cells constituting one row or column; and a second assembly electrode overlapping with the plurality of cells constituting adjacent rows or columns different from each other at the same time.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate for display device manufacturing used when manufacturing a display device using a semiconductor light emitting element, particularly, a semiconductor light emitting element of several micrometers to several tens of micrometers in size, and a manufacturing method of a display device using the same. BACKGROUND

[0002] In recent years, in the field of display technology, in order to realize a large-area display, liquid crystal displays (LCDs), organic light emitting element displays (OLEDs), and micro-LED displays, etc. are competing.

[0003] Among them, the display using a semiconductor light emitting element (micro-LED) having a diameter or cross-sectional area of 100 micrometers or less does not absorb light due to the use of a polarizing plate or the like, and thus can provide very high efficiency.

[0004] However, in the case of a micro-LED display, since millions of semiconductor light emitting elements are required in order to realize a large area, there is a problem that it is difficult to transfer the elements compared to other technologies.

[0005] As a transfer process of micro-LEDs, currently developed technologies include pick&place, laser lift-off (LLO), and self-assembly. Among them, the self-assembly method is a method in which semiconductor light emitting elements are self-positioned in a fluid, and is the most advantageous method for realizing a large-screen display device.

[0006] On the other hand, the self-assembly method has a method of directly transferring semiconductor light emitting elements to a substrate to be used as a product, and a method of transferring semiconductor light emitting elements to an assembly substrate and then transferring them to a substrate to be used as a product. The former performs a one-time transfer process, and thus is efficient in terms of process, and the latter has an advantage that a structure for self-assembly can be added to the assembly substrate without limitation, and thus the two methods are selectively used. SUMMARY

[0007] Problems to be Solved by the Invention

[0008] An object of the present application is to realize a high-resolution large-area display device. In addition, another object of the present application is to simplify the manufacturing process of a display device.

[0009] Means for Solving the Problem

[0010] According to the present application, a substrate for manufacturing a display device includes: a base portion; a plurality of assembly electrodes extending in one direction and arranged on the base portion; a dielectric layer formed on the base portion so as to cover the plurality of assembly electrodes; a partition wall portion formed on the dielectric layer; and a plurality of cells formed into a plurality of rows and columns by the partition wall portion, and a semiconductor light emitting element is arranged in the cell; the plurality of assembly electrodes extend in either of the row direction and the column direction and overlap the plurality of cells in the direction of extension; the plurality of assembly electrodes include: a first assembly electrode overlapping the plurality of cells constituting one row or column; and a second assembly electrode overlapping the plurality of cells constituting adjacent rows or columns different from each other at the same time.

[0011] In the present application, the second assembly electrode is arranged between the first assembly electrodes.

[0012] In the present application, the assembly electrode includes: a main portion extending in the row direction or the column direction; and a protruding portion protruding toward the cell on the main portion so as to overlap the cell; the first assembly electrode includes the protruding portion on one side of the main portion; and the second assembly electrode includes the protruding portion on both sides of the main portion.

[0013] In the present application, of the plurality of cells, the plurality of cells arranged in the same row have a first interval, and the plurality of cells arranged in the same column have a second interval.

[0014] In the present application, the plurality of assembly electrodes extend in a direction intersecting the direction of the narrower interval of the first interval and the second interval.

[0015] In the present application, of the first semiconductor light emitting element emitting light of a first color, the second semiconductor light emitting element emitting light of a second color, and the third semiconductor light emitting element emitting light of a third color arranged in the plurality of cells, at least two kinds of semiconductor light emitting elements are arranged in the plurality of cells arranged in the same row or column.

[0016] In the present application, the semiconductor light emitting elements of different kinds from each other have different shapes from each other, and the plurality of cells for arranging the semiconductor light emitting elements of different kinds from each other are formed in shapes corresponding to the respective semiconductor light emitting elements.

[0017] In the present application, the second assembly electrode overlaps the cells for arranging the semiconductor light emitting elements of different kinds from each other at the same time.

[0018] According to the present application, a manufacturing method of a display device includes: (a) a step of placing a plurality of semiconductor light emitting elements in a fluid chamber, and transferring a substrate including a plurality of assembly electrodes and a plurality of cells formed in a plurality of rows and columns to a predetermined assembly position; (b) a step of moving the plurality of semiconductor light emitting elements in a direction by applying a magnetic force to the plurality of semiconductor light emitting elements from one side of the substrate; and (c) a step of seating the moved semiconductor light emitting elements to the cells by applying a voltage to the plurality of assembly electrodes, the plurality of assembly electrodes extending in either of the row direction and the column direction and overlapping the plurality of cells in the extending direction, the plurality of assembly electrodes including: a first assembly electrode overlapping the plurality of cells constituting one row or column; and a second assembly electrode overlapping the plurality of cells constituting adjacent rows or columns different from each other at the same time.

[0019] In the present application, the second assembly electrode is disposed between the first assembly electrodes.

[0020] In the present application, at least two kinds of semiconductor light emitting elements among the plurality of cells are seated with a first semiconductor light emitting element emitting light of a first color having a shape different from each other, a second semiconductor light emitting element emitting light of a second color, and a third semiconductor light emitting element emitting light of a third color.

[0021] The plurality of cells are formed in shapes corresponding to the plurality of semiconductor light emitting elements of different kinds, respectively, and the steps (a) to (c) are performed for the plurality of semiconductor light emitting elements of different kinds at the same time.

[0022] In the present application, the method further includes a step of transferring the plurality of semiconductor light emitting elements seated on the substrate to a wiring substrate.

[0023] In the present application, the method further includes a step of forming a wiring electrode for lighting the plurality of semiconductor light emitting elements seated on the substrate.

[0024] Effects of the Invention

[0025] In the present application, by reducing the number of assembly electrodes to which a voltage is applied at the time of self-assembly, the cells in which semiconductor light emitting elements are seated can be formed at a closer interval, and a high-resolution display device can be realized. In addition, the present application can simplify the manufacturing process of a display device while saving manufacturing costs. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is a conceptual view showing an embodiment of a display device using a semiconductor light emitting element according to the present application.

[0027] Figure 2 is Figure 1 a partial enlarged view of A portion of the display device of

[0028] Figure 3 is Figure 2 an enlarged view of the semiconductor light emitting element of

[0029] Figure 4 is an enlarged view of another embodiment of the semiconductor light emitting element of Figure 2

[0030] Figures 5a to 5e is a conceptual view for explaining a new process for manufacturing the above-described semiconductor light emitting element.

[0031] Figure 6 is a conceptual view showing an example of a self-assembly device for the semiconductor light emitting element of the present application.

[0032] Figure 7 is a block diagram of the self-assembly device of Figure 6

[0033] Figures 8a to 8e is a conceptual view showing a process of self-assembling the semiconductor light emitting element by the self-assembly device of Figure 6

[0034] Figure 9 is a conceptual view for explaining the semiconductor light emitting element of Figures 8a to 8e

[0035] Figures 10a to 10c is a conceptual view showing a case where the semiconductor light emitting element is transferred after the self-assembly process of the present application.

[0036] Figures 11 to 13 is a flowchart showing a manufacturing method of a display device including semiconductor light emitting elements emitting light of red R, green G, and blue B.

[0037] Figure 14 is a conceptual view showing an arrangement of sub-pixels in a display device.

[0038] Figure 15a and Figure 15b are conceptual views showing a transfer process for manufacturing the display device of Figure 14

[0039] Figure 16 is a conceptual view showing an arrangement of sub-pixels in a display device of the present application.

[0040] Figure 17a , Figure 17b and Figure 18 are conceptual views showing a transfer process for manufacturing the display device of Figure 16 ​​​​​Conceptual diagram of the assembled electrode structure of the present invention of a display device. DETAILED DESCRIPTION

[0041] Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings. Identical or similar constituent elements are denoted by the same reference numerals, regardless of the drawings, and repeated description of the same will be omitted. The suffixes "module" and "part" used in the following description are added or mixed for convenience in order to express the aspects of the present specification, and do not have their own particular meanings or roles. Also, in describing the embodiments of the present specification, when it is determined that the detailed description of related known functions or configurations makes the gist of the embodiments of the present specification unclear, the detailed description will be omitted. Also, it should be understood that the accompanying drawings are merely for the purpose of easily and conveniently describing the embodiments disclosed in the present specification, and the technical idea disclosed in the present specification is not limited to the accompanying drawings.

[0042] In addition, it can be understood that, when referring to the presence of a constituent such as a layer, a region, or a substrate "on" another constituent, it means that it is directly present on the other constituent or an intervening constituent can be present therebetween.

[0043] The display device described in the present specification can include a mobile phone, a smartphone, a laptop computer, a terminal for digital broadcasting, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation, a slate PC, a tablet PC, an ultrabook, a digital TV, a desktop computer, and the like. However, the configuration of the embodiments described in the present specification can also be applied to a device including a display that is developed in the future.

[0044] Figure 1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting element of the present invention, Figure 2 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting element of the present invention, Figure 1 is a partial enlarged view of A portion of the display device of Figure 3 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting element of the present invention, Figure 2 is an enlarged view of the semiconductor light emitting element of Figure 4 is an enlarged view of another embodiment of the semiconductor light emitting element of Figure 2

[0045] ​As shown in the drawing, information processed at the control section of the display device 100 can be output from the display module 140. The housing 101 in the form of a closed loop surrounding the frame of the display module 140 can form the frame of the display device 100.

[0046] The display module 140 has a panel 141 that displays an image, and the panel 141 can include a micro semiconductor light emitting element 150 and a wiring substrate 110 for mounting the semiconductor light emitting element 150.

[0047] The wiring substrate 110 is formed with a wiring, and can be connected to an n-type electrode 152 and a p-type electrode 156 of the semiconductor light emitting element 150. Thus, the semiconductor light emitting element 150 can be provided on the wiring substrate 110 as an independent pixel that emits light by itself.

[0048] The image displayed on the panel 141 is visual information, and is realized by independently controlling the light emission of the unit pixels (sub-pixels) arranged in a matrix form using the wiring.

[0049] In the present application, as one of the semiconductor light emitting elements 150 that convert current into light, a micro LED (Light Emitting Diode) is exemplified. The micro LED can be a light emitting diode formed in a small size of 100 micrometers or less. The semiconductor light emitting elements 150 of blue, red, and green are respectively provided in a light emitting region, and a unit pixel can be realized by the combination thereof. That is, the unit pixel indicates the smallest unit for realizing one color, and at least three micro LEDs can be provided in the unit pixel.

[0050] More specifically, referring to Figure 3 , the semiconductor light emitting element 150 can be a vertical type structure.

[0051] For example, the semiconductor light emitting element 150 can be a light emitting element that emits various light including blue by mainly using gallium nitride (GaN) and adding indium (In) and / or aluminum (Al) thereto.

[0052] The vertical semiconductor light emitting element 150 includes a p-type electrode 156, a p-type semiconductor layer 155 formed on the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 formed on the n-type semiconductor layer 153. In this case, the p-type electrode 156 located at the lower portion can be electrically connected to the p-electrode of the wiring substrate 110, and the n-type electrode 152 located at the upper portion can be electrically connected to the n-electrode at the upper side of the semiconductor light emitting element 150. The vertical semiconductor light emitting element 150 can be configured with the electrodes arranged in the vertical direction, and thus has a great advantage of being able to reduce the size of the chip.

[0053] As another example, referring to Figure 4 , the semiconductor light emitting element can be a flip chip type light emitting element.

[0054] As such an example, the semiconductor light emitting element 250 includes a p-type electrode 256, a p-type semiconductor layer 255 forming the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 arranged apart from the p-type electrode 256 in the horizontal direction on the n-type semiconductor layer 253. In this case, both the p-type electrode 256 and the n-type electrode 252 can be electrically connected to the p-electrode and the n-electrode of the wiring substrate 110 at the lower portion of the semiconductor light emitting element 250.

[0055] The vertical semiconductor light emitting element 150 and the horizontal semiconductor light emitting element 250 can be a green semiconductor light emitting element, a blue semiconductor light emitting element, and a red semiconductor light emitting element, respectively. In the case of the green semiconductor light emitting element and the blue semiconductor light emitting element, a light emitting element emitting green or blue light with high power can be realized by mainly using gallium nitride (GaN) and adding indium (In) and / or aluminum (Al) thereto. As such an example, the semiconductor light emitting element can be a gallium nitride thin film formed of various layers such as n-Gan, p-Gan, AlGaN, InGaN, and the like, and specifically, the p-type semiconductor layer can be p-type GaN and the n-type semiconductor layer can be n-type GaN. However, in the case of the red semiconductor light emitting element, the p-type semiconductor layer can be p-type GaAs and the n-type semiconductor layer can be n-type GaAs.

[0056] In addition, the p-type semiconductor layer can be p-type GaN coated with Mg on the p-electrode side, and the n-type semiconductor layer can be n-type GaN coated with Si on the n-electrode side. In this case, the semiconductor light emitting element described above can be a semiconductor light emitting element without an active layer.

[0057] On the other hand, referring to Figures 1 to 4 Since the light emitting diode is very small, the unit pixel of the display panel that self-emits can be fixedly arranged, and thus a high-quality display device can be implemented.

[0058] In the display device using the semiconductor light emitting element of the present application as described above, the semiconductor light emitting element grown on a wafer and formed by a mesa and isolation process is used as a single pixel.

[0059] In this case, the micro semiconductor light emitting element 150 needs to be transferred to a predetermined position on the substrate of the display panel on the wafer. Although there is pick & place as such a transfer technique, it has a low success rate and takes a long time. As another example, although there is a technique of transferring a plurality of elements at a time using a mold or a roll, the yield is limited and is not suitable for a large-screen display.

[0060] In the present application, a new manufacturing method and manufacturing apparatus of a display device capable of solving such a problem are proposed.

[0061] For this purpose, first, a new manufacturing method of a display device is described. Figures 5a to 5e is a conceptual diagram for describing a new process of manufacturing the above-described semiconductor light emitting element.

[0062] In the present specification, a display device using a semiconductor light emitting element of a passive matrix (PM) type is exemplified. However, the following description can also be applied to a semiconductor light emitting element of an active matrix (AM) type. In addition, although a way of self-assembling a horizontal type semiconductor light emitting element is exemplified below, it can also be applied to a way of self-assembling a vertical type semiconductor light emitting element.

[0063] First, according to the manufacturing method, a first conductive type semiconductor layer 153, an active layer 154, and a second conductive type semiconductor layer 155 are respectively grown on a growth substrate 159. Figure 5a ).

[0064] If the first conductive type semiconductor layer 153 is grown, the active layer 154 is grown on the first conductive type semiconductor layer 153, and then the second conductive type semiconductor layer 155 is grown on the active layer 154. As described above, if the first conductive type semiconductor layer 153, the active layer 154, and the second conductive type semiconductor layer 155 are sequentially grown, as Figure 5aAs shown, the first-conductivity-type semiconductor layer 153, the active layer 154, and the second-conductivity-type semiconductor layer 155 form a stacked structure.

[0065] In this case, the first-conductivity-type semiconductor layer 153 can be a p-type semiconductor layer, and the second-conductivity-type semiconductor layer 155 can be an n-type semiconductor layer. However, the present application is not limited thereto, and can be exemplified as a first-conductivity-type of n-type and a second-conductivity-type of p-type.

[0066] In addition, although in the present embodiment, a case where the active layer 154 is present is exemplified, as described above, depending on the case, a structure without the active layer 154 can also be used. As such an example, the p-type semiconductor layer can be a p-type GaN to which Mg is applied on the p-electrode side, and the n-type semiconductor layer can be an n-type GaN to which Si is applied on the n-electrode side.

[0067] The growth substrate 159 (wafer) can be formed of a light-transmissive material, such as any one of sapphire (AI2O3), GaN, ZnO, AIO, but is not limited thereto. In addition, the growth substrate 159 can be formed of a material suitable for growth of a semiconductor substance (a carrier wafer), or a material having excellent thermal conductivity. The growth substrate 159 includes a conductive substrate or an insulating substrate, and at least one of, for example, a SiC substrate or Si, GaAs, GaP, InP, Ga2O3 having greater thermal conductivity than a sapphire (AI2O3) substrate can be used.

[0068] Then, a plurality of semiconductor light emitting elements 150 are formed by removing at least a portion of the first-conductivity-type semiconductor layer 153, the active layer 154, and the second-conductivity-type semiconductor layer 155. Figure 5b ).

[0069] More specifically, an isolation process is performed to form a plurality of semiconductor light emitting elements into a light emitting element array. That is, a plurality of semiconductor light emitting elements are formed by etching the first-conductivity-type semiconductor layer 153, the active layer 154, and the second-conductivity-type semiconductor layer 155 in a vertical direction.

[0070] If it is a case where horizontal-type semiconductor light emitting elements are formed, a mesa process of removing a portion of the active layer 154 and the second-conductivity-type semiconductor layer 155 in a vertical direction to expose the first-conductivity-type semiconductor layer 153 to the outside and an isolation process of forming a plurality of semiconductor light emitting element arrays by etching the first-conductivity-type semiconductor layer 153 can be performed.

[0071] Next, a second-conductivity-type electrode 156 (or p-type electrode) is formed on one surface of the second-conductivity-type semiconductor layer 155, respectively,Figure 5c The second conductive type electrode 156 can be formed by a deposition method such as sputtering, but is not limited thereto. However, in the case where the first conductive type semiconductor layer and the second conductive type semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, the second conductive type electrode 156 can also be an n-type electrode.

[0072] After that, the plurality of semiconductor light emitting elements are provided by removing the growth substrate 159. For example, the growth substrate 159 can be removed by a laser lift-off (LLO) method or a chemical lift-off (CLO) method. Figure 5d

[0073] After that, a step of mounting the semiconductor light emitting element 150 to a substrate is performed in the chamber filled with the fluid. Figure 5e

[0074] For example, the semiconductor light emitting element 150 and the substrate are put into the chamber filled with the fluid, and the semiconductor light emitting element 150 is self-assembled to the substrate using flow, gravity, surface tension, or the like. In this case, the substrate can be an assembly substrate 161.

[0075] As another example, instead of the assembly substrate 161, a wiring substrate can also be put into the fluid chamber, and the semiconductor light emitting element 150 can be directly mounted to the wiring substrate. However, for convenience of explanation, in the present application, the substrate is exemplified as the assembly substrate 161 to which the semiconductor light emitting element 150 is mounted.

[0076] The assembly substrate 161 can be provided with a plurality of cells (not shown) into which the semiconductor light emitting element 150 is inserted, so that the semiconductor light emitting element 150 can be easily mounted to the assembly substrate 161. Specifically, a plurality of cells into which the semiconductor light emitting element 150 is mounted are formed at positions on the assembly substrate 161 at which the semiconductor light emitting element 150 is aligned with the wiring electrode. The semiconductor light emitting element 150 is mounted to the cells during movement of the semiconductor light emitting element 150 in the fluid.

[0077] If the semiconductor light emitting elements 150 are mounted to the assembly substrate 161, and then the semiconductor light emitting elements 150 of the assembly substrate 161 are transferred to a wiring substrate, a large area transfer can be achieved. Therefore, the assembly substrate 161 can be referred to as a temporary substrate.

[0078] ​​On the other hand, in order to apply the self-assembly method as described above to the manufacture of large-screen displays, it is necessary to improve the transfer yield. In the present application, in order to improve the transfer yield, a method and apparatus are proposed in which the effects of gravity or friction are minimized and non-specific binding is prevented.

[0079] In this case, in the display device of the present application, a magnet is arranged in the semiconductor light emitting element and the semiconductor light emitting element is moved by magnetic force, and during the movement, the semiconductor light emitting element is positioned to a predetermined position by an electric field. Hereinafter, the transfer method and apparatus will be described in more detail with reference to the accompanying drawings.

[0080] Figure 6 is a conceptual view showing an example of a self-assembly apparatus of a semiconductor light emitting element of the present application, Figure 7 is a block diagram of the self-assembly apparatus of Figure 6 . In addition, Figures 8a to 8e is a conceptual view showing a process of self-assembly of a semiconductor light emitting element by the self-assembly apparatus of Figure 6 Figure 9 is a conceptual view for explaining a semiconductor light emitting element of Figures 8a to 8e

[0081] According to Figure 6 and Figure 7 , the self-assembly apparatus 160 of the present application can include a fluid chamber 162, a magnet 163, and a position control portion 164.

[0082] The fluid chamber 162 has a space in which a plurality of semiconductor light emitting elements are accommodated. In the space, a fluid can be filled, and the fluid can include an assembly liquid such as water. Thus, the fluid chamber 162 can be a water tank, and can be configured to be open type. However, the present application is not limited thereto, and the fluid chamber 162 can be closed type in which the space is configured by a closed space.

[0083] In the fluid chamber 162, an assembly surface of an assembly substrate 161 to which the semiconductor light emitting elements 150 are assembled can be arranged to face downward. For example, the assembly substrate 161 is transferred to an assembly position by a transfer portion, and the transfer portion can have a stage 165 on which a substrate is mounted. The stage 165 can be adjusted in position by a control portion, and thus the assembly substrate 161 can be transferred to the assembly position.

[0084] At this time, in the assembly position, the assembly surface of the assembly substrate 161 faces the bottom of the fluid chamber 162. As shown in the drawing, the assembly surface of the assembly substrate 161 is arranged to be immersed in the fluid in the fluid chamber 162. Thus, the semiconductor light emitting elements 150 move toward the assembly surface in the fluid. ​​

[0085] The assembly substrate 161, which is an assembly substrate capable of forming an electric field, can include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.

[0086] The base portion 161a is composed of an insulating material, and the plurality of electrodes 161c can be thin film or thick film bi-planar electrodes patterned on one surface of the base portion 161a. The electrodes 161c can be formed of, for example, a stack of Ti / Cu / Ti, Ag paste, and ITO, etc.

[0087] The dielectric layer 161b can be composed of inorganic substances such as SiO2, SiN x , SiON, Al2O3, TiO2, HfO2, etc. Unlike this, the dielectric layer 161b can be composed of a single layer or a plurality of layers as an organic insulator. The thickness of the dielectric layer 161b can be composed of a thickness of several tens of nanometers to several micrometers.

[0088] Further, the assembly substrate 161 of the present application includes a plurality of cells 161d divided by a partition wall. The cells 161d can be arranged in sequence in one direction, and can be composed of a polymer material. In addition, the partition wall 161e constituting the cell 161d is composed so as to be shared with an adjacent cell 161d. The partition wall 161e protrudes from the base portion 161a, and the cells 161d can be arranged in sequence in one direction using the partition wall 161e. More specifically, the cells 161d can be arranged in sequence in the column and row directions, respectively, and can have a matrix structure.

[0089] A groove in which a semiconductor light emitting element 150 is accommodated is provided inside the cell 161d, and the groove can be a space defined by the partition wall 161e. The shape of the groove can be the same as or similar to the shape of the semiconductor light emitting element. For example, in the case of a quadrangular semiconductor light emitting element, the groove can be quadrangular. In addition, in the case of a circular semiconductor light emitting element, the groove formed inside the cell can be formed in a circular shape. Also, each cell 161d is composed so as to accommodate a single semiconductor light emitting element. That is, one cell accommodates one semiconductor light emitting element.

[0090] On the other hand, the plurality of electrodes 161c has a plurality of electrode lines arranged at the bottom of each cell 161d, and the plurality of electrode lines can be formed so as to extend to an adjacent cell.

[0091] A plurality of the electrodes 161c are arranged on the lower side of the cell 161d, and are respectively applied with different polarities from each other, thereby generating an electric field within the cell 161d. In order to form the electric field, the dielectric layer 161b covers the plurality of the electrodes 161c, and the dielectric layer 161b can form the bottom of the cell 161d. In this structure, if a pair of the electrodes 161c are applied with different polarities from each other on the lower side of each cell 161d, an electric field is formed, and under the action of the electric field, the semiconductor light emitting element can be inserted into the inside of the cell 161d.

[0092] In the assembly position, the electrodes of the assembly substrate 161 are electrically connected with the power supply part 171. The power supply part 171 performs a function of generating the electric field by applying a power source to the plurality of the electrodes 161c.

[0093] As shown in the figure, the self-assembly device can have a magnet 163 for applying a magnetic force to the semiconductor light emitting element 150. The magnet 163 is configured to be arranged apart from the fluid chamber 162 and to apply a magnetic force to the semiconductor light emitting element 150. The magnet 163 can be arranged to face the opposite surface of the assembly surface of the assembly substrate 161, and the position of the magnet 163 is controlled by a position control part 164 connected with the magnet 163.

[0094] The semiconductor light emitting element can have a magnet to move within the fluid by the magnetic field of the magnet 163.

[0095] Referring to Figure 9 The semiconductor light emitting element 1050 having a magnet can include a first conductive type electrode 1052 and a second conductive type electrode 1056, a first conductive type semiconductor layer 1053 for the first conductive type electrode 1052 to be arranged, a second conductive type semiconductor layer 1055 overlapping the first conductive type semiconductor layer 1053 and for the second conductive type electrode 1056 to be arranged, and an active layer 1054 arranged between the first conductive type semiconductor layer 1053 and the second conductive type semiconductor layer 1055.

[0096] Here, the first conductive type can be p-type, and the second conductive type can be n-type, or it can be configured to be opposite thereto. In addition, it can also be a semiconductor light emitting element without an active layer as described above.

[0097] On the other hand, in the present application, the first conductive type electrode 1052 can be generated after the semiconductor light emitting element 1050 is assembled to the wiring substrate by self-assembly. In addition, in the present application, the second conductive type electrode 1056 can include a magnet. The magnet can mean a metal having magnetism. The magnet can be Ni, SmCo, or the like, and as another example, can include a substance corresponding to at least one of Gd-based, La-based, and Mn-based.

[0098] The magnet can be provided in a particle form in the second conductive type electrode 1056. In addition, unlike this, the conductive type electrode including the magnet can be formed such that one layer of the conductive type electrode is the magnet. As such an example, as shown in FIG. 10, the second conductive type electrode 1056 of the semiconductor light emitting element 1050 can include a first layer 1056a and a second layer 1056b, in which the first layer 1056a can be configured to include a magnet, and the second layer 1056b can include a metal material that is not a magnet. Figure 9

[0099] In the present example, the first layer 1056a including the magnet can be disposed in contact with the second conductive type semiconductor layer 1055. In this case, the first layer 1056a is disposed between the second layer 1056b and the second conductive type semiconductor layer 1055, and the second layer 1056b can be a contact metal connected to the wiring of the wiring substrate. However, the present application is not limited thereto, and the magnet can be disposed on one side of the first conductive type semiconductor layer 1053.

[0100] Referring again to Figure 6 and Figure 7 , the self-assembly device can have a magnet robot capable of being automatically or manually moved in x, y, and z axes on the upper portion of the fluid chamber 162, or can have a motor capable of rotating the magnet 163. The magnet robot and the motor can constitute the position control portion 164. Thereby, the magnet 163 is rotated in a direction horizontal to the assembly substrate 161, a clockwise direction, or a counterclockwise direction.

[0101] On the other hand, a light-transmissive bottom plate 166 is formed in the fluid chamber 162, and the semiconductor light emitting element can be disposed between the bottom plate 166 and the assembly substrate 161. An image sensor 167 can be disposed to face the bottom plate 166 to monitor the inside of the fluid chamber 162 through the bottom plate 166. The image sensor 167 is controlled by a control portion 172, and can have an inverted lens and a CCD or the like to be able to observe the assembly surface of the assembly substrate 161.

[0102] ​The self-assembly apparatus described above is configured to utilize a combination of magnetic and electric fields. Using this, the semiconductor light-emitting element can be positioned at a predetermined location on the substrate via an electric field while moving according to changes in the position of the magnet. The assembly process using the self-assembly apparatus described above will be explained in more detail below.

[0103] First, through Figures 5a to 5c The process described herein forms a plurality of semiconductor light-emitting elements 1050 having magnets. In this case, during the formation Figure 5c During the process of depositing the second conductive electrode, a magnet can be deposited.

[0104] Then, the assembly substrate 161 is moved to the assembly position, and the semiconductor light-emitting element 1050 is inserted into the fluid chamber 162. Figure 8a ).

[0105] As described above, the assembly position of the assembly substrate 161 can be such that the assembly surface of the assembly substrate 161 for assembling the semiconductor light-emitting element 150 is facing downwards in the fluid chamber 162.

[0106] In this case, some of the plurality of semiconductor light-emitting elements 1050 may sink to the bottom of the fluid chamber 162, while some may float in the fluid. If the fluid chamber 162 has a transparent base plate 166, some of the plurality of semiconductor light-emitting elements 1050 may sink to the base plate 166.

[0107] Then, a magnetic force is applied to the semiconductor light-emitting element 1050 to cause a plurality of the semiconductor light-emitting elements 1050 to float vertically within the fluid chamber 162. Figure 8b ).

[0108] If the magnet 163 of the self-assembly device moves from its original position toward the opposite side of the assembly surface of the assembly substrate 161, the semiconductor light-emitting element 1050 will float toward the assembly substrate 161 in the fluid. The original position may be a position detached from the fluid chamber 162. As another example, the magnet 163 may be made of an electromagnet, in which case an initial magnetic force is generated by supplying power to the electromagnet.

[0109] On the other hand, in this example, the spacing between the assembly surface of the assembly substrate 161 and the semiconductor light-emitting element 1050 can be controlled by adjusting the magnitude of the magnetic force. For example, the spacing distance can be controlled using the weight, buoyancy, and magnetic force of the semiconductor light-emitting element 1050. The spacing distance can be from a few millimeters to tens of micrometers from the outermost corner of the substrate.

[0110] Then, a magnetic force is applied to the semiconductor light emitting element 1050 to move the semiconductor light emitting element 1050 in a direction within the fluid chamber 162. For example, the magnet 163 is moved in a direction horizontal to the assembly substrate 161, a clockwise direction, or a counterclockwise direction (S1600). Figure 8c In this case, the semiconductor light emitting element 1050 is moved in a direction horizontal to the assembly substrate 161 at a position spaced apart from the assembly substrate 161 by the magnetic force.

[0111] Then, a step of guiding the semiconductor light emitting element 1050 to the pre-set position by applying an electric field to the semiconductor light emitting element 1050 is performed (S1700) to position the semiconductor light emitting element 1050 at the pre-set position of the assembly substrate 161 during movement. Figure 8c For example, the semiconductor light emitting element 1050 is moved in a direction vertical to the assembly substrate 161 during movement in a direction horizontal to the assembly substrate 161 by the electric field and is positioned at the pre-set position of the assembly substrate 161.

[0112] More specifically, an electric field is generated by supplying power to bi-planar electrodes of the assembly substrate 161 and the semiconductor light emitting element 1050 is guided by the electric field to be assembled only to the pre-set position. That is, the semiconductor light emitting element 1050 is self-assembled to the assembly position of the assembly substrate 161 by the selectively generated electric field. To this end, the assembly substrate 161 can be provided with a unit into which the semiconductor light emitting element 1050 is inserted.

[0113] After that, a process of unloading the assembly substrate 161 is performed to complete the assembly process. In the case of the assembly substrate 161, a post-process for implementing a display device can be performed to transfer the semiconductor light emitting elements in an array to a wiring substrate as described above.

[0114] On the other hand, the magnet 163 can be moved in a direction away from the assembly substrate 161 to make the semiconductor light emitting element 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162 after the semiconductor light emitting element 1050 is guided to the pre-set position (S1800).

[0115] As another example, in the case of the magnet 163 being an electromagnet, if power supply is interrupted, the semiconductor light emitting element 1050 remaining in the fluid chamber 162 can fall to the bottom of the fluid chamber 162. Figure 8d

[0116] ​After that, if the semiconductor light emitting element 1050 located at the bottom of the fluid chamber 162 is recovered, the recovered semiconductor light emitting element 1050 can be reused.

[0117] The self-assembly device and method as described above utilize a magnetic field to concentrate the distant components near a pre-set assembly site, and selectively assemble the components only to the assembly site by applying a separate electric field at the assembly site, to improve the assembly yield of the fluidic assembly. At this time, by setting the assembly substrate at the upper portion of the sink and making the assembly surface face downward, the influence of gravity caused by the weight of the components is minimized and non-specific binding is prevented, thereby removing defects. That is, by setting the assembly substrate at the upper portion to minimize the influence of gravity or friction and prevent non-specific binding, the transfer yield is improved.

[0118] As described above, according to the present application configured as described above, a large number of semiconductor light emitting elements can be assembled at one time in a display device formed of independent pixels of semiconductor light emitting elements.

[0119] As described above, according to the present application, it is possible to pixelate a large number of semiconductor light emitting elements on a small-sized wafer and then transfer them to a large-area substrate. Thereby, it is possible to manufacture a large-area display device at a low cost.

[0120] On the other hand, the present application provides a structure and method of an assembly substrate for improving the yield of the self-assembly process and the process yield after self-assembly. The present application is limited to the case where the assembly substrate 161 is used as an assembly substrate. That is, the assembly substrate described later is not used as a wiring substrate of a display device. Therefore, the assembly substrate 161 will be referred to as the assembly substrate 161 hereinafter.

[0121] The present application improves the process yield in two aspects. First, the present application prevents the formation of a strong electric field at an undesired location and the placement of a semiconductor light emitting element at the undesired location. Second, the present application prevents the semiconductor light emitting element placed on the assembly substrate from remaining on the assembly substrate when the semiconductor light emitting element is transferred to another substrate.

[0122] The above-described problems to be solved are not achieved by different constituent elements from each other. The above-described two problems to be solved can be achieved by the organic combination of the constituent elements described later and the assembly substrate 161 already explained.

[0123] Before the present application is specifically described, a post-process for manufacturing a display device after self-assembly is described.

[0124] Figures 10a to 10c is a conceptual diagram showing the case where the semiconductor light emitting element is transferred after the self-assembly process of the present application.

[0125] After the self-assembly process explained in Figures 8a to 8e is completed, the semiconductor light emitting elements become disposed at a predetermined position of the assembly substrate 161. The plurality of semiconductor light emitting elements disposed on the assembly substrate 161 are transferred to another substrate at least once. In the present specification, although an embodiment in which the semiconductor light emitting elements disposed on the assembly substrate 161 are transferred twice is explained, it is not limited thereto, and the semiconductor light emitting elements disposed on the assembly substrate 161 can be transferred to another substrate once or more than three times.

[0126] On the other hand, after the self-assembly process is completed, the assembly surface of the assembly substrate 161 is in a state of facing the downward side direction (or the direction of gravity). In order to perform a post self-assembly process, the assembly substrate 161 can be flipped 180 degrees in a state in which the semiconductor light emitting elements are disposed. Since there is a risk that the semiconductor light emitting elements are detached from the assembly substrate 161 in this process, a voltage needs to be applied to a plurality of the electrodes 161c (hereinafter, referred to as assembly electrodes) during the flipping of the assembly substrate 161. An electric field formed between the assembly electrodes prevents the semiconductor light emitting elements from being detached from the assembly substrate 161 during the flipping of the assembly substrate 161.

[0127] After the self-assembly process, if the assembly substrate 161 is flipped 180 degrees, it becomes a shape as Figure 10a . Specifically, as Figure 10a indicated, the assembly surface of the assembly substrate 161 becomes a state of facing the upward side (or the opposite direction of gravity). In this state, the transfer substrate 400 is aligned with the assembly substrate 161 on the upper side of the assembly substrate 161.

[0128] The transfer substrate 400 is a substrate for detaching the semiconductor light emitting elements disposed on the assembly substrate 161 and transferring them to a wiring substrate. The transfer substrate 400 can be formed of a PDMS (polydimethylsiloxane) material. Thus, the transfer substrate 400 can be referred to as a PDMS substrate.

[0129] After the transfer substrate 400 is aligned with the assembly substrate 161, the transfer substrate 400 is attached to the assembly substrate 161. Thereafter, if the transfer substrate 400 is moved to the upper side of the assembly substrate 161, the semiconductor light emitting elements 350 disposed on the assembly substrate 161 are moved to the transfer substrate 400 by the adhesion force of the transfer substrate 400.

[0130] To this end, the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400 should be greater than the surface energy between the semiconductor light emitting element 350 and the dielectric layer 161b. The greater the difference between the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400 and the surface energy between the semiconductor light emitting element 350 and the dielectric layer 161b, the higher the probability that the semiconductor light emitting element 350 will be detached from the assembly substrate 161, and thus the greater the difference between the two surface energies is desirable.

[0131] On the other hand, the transfer substrate 400 can include a plurality of protruding portions 410 to concentrate the pressure applied by the transfer substrate 400 on the semiconductor light emitting element 350 when the transfer substrate 400 is attached to the assembly substrate 161. The protruding portions 410 can be formed at the same intervals as the plurality of semiconductor light emitting elements disposed on the assembly substrate 161. In the case where the transfer substrate 400 is attached to the assembly substrate 161 in alignment with the protruding portions 410 overlapping the semiconductor light emitting element 350, the pressure generated by the transfer substrate 400 can be concentrated only on the semiconductor light emitting element 350. Thus, the present application increases the probability that the semiconductor light emitting element will be detached from the assembly substrate 161.

[0132] On the other hand, preferably, a portion of the semiconductor light emitting element is exposed outside the groove in the state where the semiconductor light emitting element is disposed on the assembly substrate 161. If the semiconductor light emitting element 350 is not exposed outside the groove, the pressure generated by the transfer substrate 400 cannot be concentrated on the semiconductor light emitting element 350, and thus the probability that the semiconductor light emitting element 350 will be detached from the assembly substrate 161 can be reduced.

[0133] Finally, referring to Figure 10c , a step of transferring the semiconductor light emitting element 350 from the transfer substrate 400 to the wiring substrate 500 by attaching the transfer substrate 400 to the wiring substrate 500 is performed. At this time, the protruding portions 510 can be formed on the wiring substrate 500. The transfer substrate 400 and the wiring substrate 500 are aligned such that the semiconductor light emitting element 350 disposed on the transfer substrate 400 overlaps the protruding portions 510. Thereafter, in the case where the transfer substrate 400 and the wiring substrate 500 are attached, the probability that the semiconductor light emitting element 350 will be detached from the transfer substrate 400 can be increased by the protruding portions 510.

[0134] On the other hand, in order to transfer the semiconductor light emitting element 350 disposed on the transfer substrate 400 to the wiring substrate 500, the surface energy between the semiconductor light emitting element 350 and the wiring substrate 500 should be greater than the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400. Since the greater the difference between the surface energy between the semiconductor light emitting element 350 and the wiring substrate 500 and the surface energy between the semiconductor light emitting element 350 and the transfer substrate 400, the higher the probability that the semiconductor light emitting element 350 is detached from the transfer substrate 400, it is preferable that the difference between the two surface energies is greater.

[0135] After the semiconductor light emitting element 350 disposed on the transfer substrate 400 is completely transferred to the wiring substrate 500, a step of forming an electrical connection between the semiconductor light emitting element 350 and the wiring electrode formed on the wiring substrate can be performed. The structure of the wiring electrode and the method of forming an electrical connection can vary depending on the type of the semiconductor light emitting element 350.

[0136] On the other hand, although not shown, the wiring substrate 500 can be provided with an anisotropic conductive film. In this case, by simply bringing the transfer substrate 400 and the wiring substrate 500 into close contact, an electrical connection can be formed between the semiconductor light emitting element 350 and the wiring electrode formed on the wiring substrate 500.

[0137] On the other hand, in the case of manufacturing a display device including semiconductor light emitting elements emitting light of different colors from each other, in the step of Figures 10a to 10c The described method can be implemented in various ways. Hereinafter, a manufacturing method of a display device including semiconductor light emitting elements emitting light of red R, green G, and blue B colors will be described.

[0138] Figures 11 to 13 is a flowchart showing a manufacturing method of a display device including semiconductor light emitting elements emitting light of red R, green G, and blue B colors.

[0139] The semiconductor light emitting elements emitting light of different colors from each other can be individually assembled on different assembly substrates. Specifically, the assembly substrates 161 can include a first assembly substrate for accommodating semiconductor light emitting elements emitting light of a first color, a second assembly substrate for accommodating semiconductor light emitting elements emitting light of a second color different from the first color, and a third assembly substrate for accommodating semiconductor light emitting elements emitting light of a third color different from the first and second colors. According to the method described in Figures 8a to 8e in the method described in the above, semiconductor light emitting elements of different types from each other are assembled on each assembly substrate. For example, semiconductor light emitting elements emitting light of red R, green G, and blue B colors can be assembled on the first to third assembly substrates, respectively.

[0140] Referring to Figure 11 , the RED chip, the GREEN chip, and the BLUE chip can be assembled in the first assembly substrate to the third assembly substrate (RED TEMPLATE, GREEN TEMPLATE, BLUE TEMPLATE), respectively. In this state, the RED chip, the GREEN chip, and the BLUE chip can be transferred to the wiring substrate by different transfer substrates, respectively.

[0141] Specifically, the step of transferring the semiconductor light emitting elements disposed on the assembly substrate to the wiring substrate can include a step of transferring the semiconductor light emitting element (RED chip) emitting the first color of light from the first assembly substrate (RED TEMPLATE) to the first transfer substrate (stamp R) by tightly attaching the first transfer substrate (stamp R) to the first assembly substrate (RED TEMPLATE); a step of transferring the semiconductor light emitting element (GREEN chip) emitting the second color of light from the second assembly substrate (GREEN TEMPLATE) to the second transfer substrate (stamp G) by tightly attaching the second transfer substrate (stamp G) to the second assembly substrate (GREEN TEMPLATE); and a step of transferring the semiconductor light emitting element (BLUE chip) emitting the third color of light from the third assembly substrate (BLUE TEMPLATE) to the third transfer substrate (stamp B) by tightly attaching the third transfer substrate (stamp B) to the third assembly substrate (BLUE TEMPLATE).

[0142] Then, a step of transferring the semiconductor light emitting elements emitting the first color to the third color of light from the first transfer substrate to the third transfer substrate to the wiring substrate by tightly attaching the first transfer substrate to the third transfer substrate to the wiring substrate, respectively, is performed.

[0143] According to Figure 11 the manufacturing method, in order to manufacture a display device including a RED chip, a GREEN chip, and a BLUE chip, three kinds of assembly substrates and three kinds of transfer substrates are required.

[0144] Unlike this, referring to Figure 12 , the RED chip, the GREEN chip, and the BLUE chip can be assembled in the first assembly substrate to the third assembly substrate (RED TEMPLATE, GREEN TEMPLATE, BLUE TEMPLATE), respectively. In this state, the RED chip, the GREEN chip, and the BLUE chip can be transferred to the wiring substrate by different transfer substrates, respectively.

[0145] Specifically, the step of transferring the semiconductor light emitting elements disposed on the assembly substrate to the wiring substrate includes a step of transferring the semiconductor light emitting elements (RED chips) emitting the first color of light from the first assembly substrate (RED TEMPLATE) to the transfer substrate (RGB integrated stamp) by abutting the transfer substrate (RGB integrated stamp) to the first assembly substrate (RED TEMPLATE), a step of transferring the semiconductor light emitting elements (GREEN chips) emitting the second color of light from the second assembly substrate (GREEN TEMPLATE) to the transfer substrate (RGB integrated stamp) by abutting the transfer substrate (RGB integrated stamp) to the second assembly substrate (GREEN TEMPLATE), and a step of transferring the semiconductor light emitting elements (BLUE chips) emitting the third color of light from the third assembly substrate (BLUE TEMPLATE) to the transfer substrate (RGB integrated stamp) by abutting the transfer substrate (RGB integrated stamp) to the third assembly substrate (BLUE TEMPLATE).

[0146] In this case, the alignment positions between each of the first to third assembly substrates and the transfer substrate can be different from each other. For example, the relative position of the transfer substrate with respect to the first assembly substrate and the relative position of the transfer substrate with respect to the second assembly substrate can be different from each other when the alignment between the assembly substrate and the transfer substrate is completed. The alignment position of the transfer substrate can be moved by an amount corresponding to the pitch of a unit pixel (SUB PIXEL) each time the kind of assembly substrate is changed. In this way, all of the three kinds of chips can be transferred to the transfer substrate when the transfer substrate is sequentially abutted to the first to third assembly substrates.

[0147] Then, the step of transferring the semiconductor light emitting elements emitting the first to third colors of light from the transfer substrate to the wiring substrate by abutting the transfer substrate to the wiring substrate is performed. Figure 11 Likewise, the step of transferring the semiconductor light emitting elements emitting the first to third colors of light from the transfer substrate to the wiring substrate by abutting the transfer substrate to the wiring substrate is performed.

[0148] According to the manufacturing method of Figure 12 , in order to manufacture a display device including RED chips, GREEN chips, and BLUE chips, three kinds of assembly substrates and one kind of transfer substrate are required.

[0149] Unlike the above-described Figure 11 and Figure 12 , according to Figure 13On an assembly substrate (RGB integrated substrate), a RED chip, a GREEN chip, and a BLUE chip can be assembled, respectively. In this state, the RED chip, the GREEN chip, and the BLUE chip can be transferred to a wiring substrate using the same transfer substrate (RGB integrated stamp).

[0150] According to Figure 13 the manufacturing method, in order to manufacture a display device including a RED chip, a GREEN chip, and a BLUE chip, an assembly substrate and a transfer substrate are required.

[0151] As described above, in the case of manufacturing a display device including semiconductor light emitting elements that emit light of different colors from each other, the manufacturing method can be implemented in various ways.

[0152] Figure 14 is a conceptual diagram illustrating an arrangement of sub-pixels in a display device, Figure 15a and Figure 15b is a conceptual diagram illustrating a transfer process for manufacturing Figure 14 a display device.

[0153] A display device 600 is composed of semiconductor light emitting elements 650 arranged in a plurality of rows and columns as illustrated in Figure 14 Each semiconductor light emitting element 650 corresponds to a single pixel, and a plurality of single pixels form a unit pixel. The single pixels constituting the unit pixel respectively implement any one of red, green, and blue.

[0154] As a method of implementing red, green, and blue, there are a method of arranging a green phosphor layer and a red phosphor layer along a portion of a line after assembling a semiconductor light emitting element that emits blue light (first method), and a method of assembling semiconductor light emitting elements that emit red, green, and blue light (second method). Figure 14 is a conceptual diagram illustrating a display device implemented in the second method.

[0155] According to an embodiment of a manufacturing method of a display device, in order to manufacture Figure 14 a display device 600 illustrated in Figure 15a and Figure 15b two transfer processes illustrated in Figure 15a are required. Figure 15b is a secondary transfer process using a stamp.

[0156] Referring to the drawings, the transfer process is performed separately for red semiconductor light emitting elements, green semiconductor light emitting elements, and blue semiconductor light emitting elements. In Figure 15aIn this case, the red semiconductor light emitting element 650R is assembled to the red semiconductor light emitting element assembly substrate 700R, the green semiconductor light emitting element 650G is assembled to the green semiconductor light emitting element assembly substrate 700G, and the blue semiconductor light emitting element 650B is assembled to the blue semiconductor light emitting element assembly substrate 700B. Therefore, the process of transferring the red semiconductor light emitting element, the green semiconductor light emitting element, and the blue semiconductor light emitting element to the assembly substrate by self-assembly is performed at least three times.

[0157] Since the red semiconductor light emitting element, the green semiconductor light emitting element, and the blue semiconductor light emitting element are assembled with different assembly substrates, the secondary transfer process using a stamp is also performed at least three times. As shown in FIG. 14B, the red semiconductor light emitting element 650R, the green semiconductor light emitting element 650G, and the blue semiconductor light emitting element 650B are sequentially transferred to the substrate 610 constituting the display device 600 by the red semiconductor light emitting element stamp 800R, the green semiconductor light emitting element stamp 800G, and the blue semiconductor light emitting element stamp 800B of the PDMS material, respectively. Figure 15b

[0158] On the other hand, as the display device becomes large in area, the number of transfer processes of the semiconductor light emitting element of FIG. 15 increases, and thus the time and cost required for manufacturing the display device also increase. In contrast, in the case of implementing a large-area display device by the first method, although the number of transfer processes is reduced, it is necessary to form assembly electrode patterns in the assembly substrate at intervals of within several micrometers in order to maintain resolution at a predetermined level or more. However, in the case of forming assembly electrode patterns at narrow intervals as in the related art, a short circuit can occur between adjacent assembly electrodes when a voltage is applied.

[0159] The present application relates to a substrate for display device manufacturing, which can implement a high-resolution large-area display device through a relatively simple process. Hereinafter, the substrate for display device manufacturing of the present application will be described with reference to the accompanying drawings.

[0160] The substrate for display device manufacturing of the present application is a substrate used for manufacturing a display device, and as shown in FIG. 1A and FIG. 1B, can be an assembly substrate on which semiconductor light emitting elements are assembled by self-assembly. Figure 15a Figure 15b The substrate for display device manufacturing of the present application is a substrate used for manufacturing a display device, and as shown in FIG. 1A and FIG. 1B, can be an assembly substrate on which semiconductor light emitting elements are assembled by self-assembly.

[0161] Figure 16 is a conceptual view illustrating the arrangement of sub-pixels in a display device of the present application, Figure 17a Figure 17b Figure 18 is a conceptual view illustrating the arrangement of sub-pixels in a display device of the present application,​​​​Figure 16 Conceptual diagram of the assembled electrode structure of the present application of the display device.

[0162] Referring to Figure 16 , the display device 1000 of the present application is composed of semiconductor light emitting elements 1050' arranged in a plurality of rows and columns. Each semiconductor light emitting element 1050' corresponds to a single pixel, and a plurality of single pixels form a unit pixel. The single pixels constituting the unit pixel respectively realize any one of red, green, and blue.

[0163] As a method of realizing red, green, and blue, there are a method of arranging a green phosphor layer and a red phosphor layer along a part of a line after assembling a semiconductor light emitting element emitting blue light (first method), and a method of assembling semiconductor light emitting elements emitting red, green, and blue light (second method). Figure 16 is a conceptual diagram showing a display device realized in the second method.

[0164] Compared with the conventional display device 600, the semiconductor light emitting elements 1050' of the display device 1000 of the present application can be arranged to constitute a narrower interval. In the display device 1000, the semiconductor light emitting elements 1050' have a row interval A and a column interval B, and by setting such intervals to be narrower, a high resolution display device can be realized.

[0165] The present application proposes a structure in which one assembled electrode is involved in the assembly of semiconductor light emitting elements arranged on two lines in a substrate for display device manufacturing in order to realize a display device 1000 as shown in Figure 16

[0166] Figure 17b A cross section of a substrate for display device manufacturing 2000 of the present application is shown.

[0167] As shown in Figure 17b , the substrate for display device manufacturing 2000 of the present application includes a base portion 2010, an assembled electrode 2020, a dielectric layer 2030, a partition wall portion 2040, and a unit 2050.

[0168] The base portion 2010 can be a flexible substrate having flexibility and insulating properties, and for this purpose, can be formed to contain a material such as polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), or the like.

[0169] ​An assembly electrode 2020 extending in one direction can be provided on the base portion 2010. The assembly electrode 2020 is a structure for forming an electric field at the time of self-assembly, and will be described later in detail.

[0170] In addition, a dielectric layer 2030 can be formed on the base portion 2010 to cover the assembly electrode 2020. The dielectric layer 2030 can be formed of an inorganic insulating material such as SiO2, SiN x , SiON, Al2O3, TiO2, HfO2, or the like.

[0171] An inorganic or organic insulating material partition wall portion 2040 can be formed on the dielectric layer 2030. The partition wall portion 2040 forms a cell 2050 in which the semiconductor light emitting element 1050' is disposed, and can be formed on the dielectric layer 2030. The cells 2050 can be arranged in a plurality of rows and a plurality of columns. At this time, the cells 2050 arranged in the row direction have the same row interval A as the semiconductor light emitting element 1050', and the cells 2050 arranged in the column direction have the same column interval B as the semiconductor light emitting element 1050'.

[0172] Hereinafter, referring to FIG. 17 and Figure 18 , the structure of the assembly electrode 2020 proposed in the present application will be described in more detail.

[0173] The assembly electrode 2020 can extend in either of the row direction and the column direction, and can overlap the cells 2050 in the extending direction. According to the present application, as shown in FIG. 17 and Figure 18 , the assembly electrode 2020 can include a first assembly electrode 2020a overlapping the cells 2050 constituting one row or column, and a second assembly electrode 2020b overlapping the cells 2050 constituting adjacent rows or columns different from each other at the same time. That is, although the existing assembly electrode is related only to the assembly of the semiconductor light emitting elements disposed in the cells arranged in a specific line, according to the present application, since a part of the assembly electrode is related to the assembly of the semiconductor light emitting elements disposed in the cells arranged in two adjacent lines, a larger number of semiconductor light emitting elements 1050' can be assembled without additionally forming the assembly electrode 2020, and the arrangement interval between the semiconductor light emitting elements 1050' can be shortened.

[0174] In the present application, the second assembly electrode 2020b can be disposed between the first assembly electrodes 2020a. For example, the first assembly electrodes 2020a can be disposed at both ends of the substrate 2000 for display device manufacturing, and the second assembly electrode 2020b can be disposed between the first assembly electrodes 2020a.

[0175] On the other hand, the assembly electrode 2020 can be formed in a linear shape extending in one direction as shown in FIG. 17 (a shape constituted only by the main body portion 2021 described later), or can be formed in a shape including a portion projecting toward the cell 2050 as shown in FIG. 18. In the latter case, the assembly electrode 2020 can include a main body portion 2021 extending in the row direction or the column direction, and a projecting portion 2022 projecting toward the cell 2050 to overlap the cell 2050 on the main body portion 2021. At this time, the first assembly electrode 2020a includes the projecting portion 2022 only on one side of the main body portion 2021, while the second assembly electrode 2020b can include the projecting portion 2022 on both sides of the main body portion 2021. Figure 18

[0176] On the other hand, as described above, the semiconductor light emitting elements 1050' are arranged to have a prescribed row interval A and a column interval B, and thus the cells 2050 in which the semiconductor light emitting elements 1050' are disposed are also arranged to have a prescribed row interval (hereinafter, a first interval) A and a column interval (hereinafter, a second interval) B. That is, the cells arranged in the same row among the cells 2050 have the first interval A, and the cells arranged in the same column have the second interval B. The assembly electrode 2020 can be formed to extend in a direction intersecting the narrower one of the first interval A and the second interval B.

[0177] The display device manufacturing substrate 2000 of the present application can manufacture a display device 1000 including semiconductor light emitting elements 1050' that emit light of different colors from each other. The display device 1000 can include at least two kinds of semiconductor light emitting elements among a first semiconductor light emitting element 1050'a that emits light of a first color, a second semiconductor light emitting element 1050'b that emits light of a second color, and a third semiconductor light emitting element 1050'c that emits light of a third color. The same kind of semiconductor light emitting element among the semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be disposed in the cells 2050 arranged in the same row or column of the display device manufacturing substrate 2000. Hereinafter, a case in which the display device 1000 includes the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c will be described.

[0178] ​The first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be formed to have shapes different from each other, and the cells 2050 in which the semiconductor light emitting elements are seated can be formed in shapes corresponding to the respective semiconductor light emitting elements. Here, the shape can be understood to include the size. In consideration of the assembly rate, it is preferable that the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c be formed in a circular or elliptical shape, and among the first to third semiconductor light emitting elements, only one kind of semiconductor light emitting element can be formed in a circular shape. In the case where the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c have shapes different from each other, the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be simultaneously self-assembled to the display device manufacturing substrate 2000.

[0179] On the other hand, the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c are alternately arranged along the rows or columns, and thus the second assembly electrode 2020b can overlap the cells 2050 in which semiconductor light emitting elements of different kinds are seated at the same time. That is, one side of the second assembly electrode 2020b can overlap the cells in which any one of the first to third semiconductor light emitting elements is seated, and the other side can overlap the cells in which another semiconductor light emitting element is seated.

[0180] As described above, the display device manufacturing substrate 2000 of the present application includes the second assembly electrode 2020b related to the assembly of the semiconductor light emitting elements 1050' of two lines, and thus it is possible to implement the display device 1000 in which a larger number of semiconductor light emitting elements 1050' are arranged at a narrower interval, and it is possible to reduce the number of times of the transfer process.

[0181] Hereinafter, a method of manufacturing the display device 1000 using the above-described display device manufacturing substrate 2000 will be described.

[0182] The semiconductor light emitting elements 1050' can be seated in the display device manufacturing substrate (or substrate) 2000 of the present application by self-assembly.

[0183] First, (a) a step of placing the semiconductor light emitting elements 1050' in a fluid chamber in which self-assembly is performed, and moving the substrate 2000 including the assembly electrodes 2020 and the cells 2050 arranged in a plurality of rows and columns to a pre-set assembly position can be performed. In detail, the substrate 2000 can be disposed at an upper portion of the fluid chamber, and can be disposed such that a surface (hereinafter, an assembly surface) including the assembly electrodes 2020 and the cells 2050 is immersed in the fluid chamber.

[0184] Then, (b) can perform a step of moving the semiconductor light emitting element 1050' toward one direction by applying a magnetic force to the semiconductor light emitting element 1050' which is dropped into the fluid chamber on one side of the substrate 2000. Here, the one side of the substrate 2000 means the opposite side of the assembly surface, and the magnetic force can be applied to the semiconductor light emitting element 1050' using a magnet or an electromagnet.

[0185] Then, (c) can perform a step of positioning the moving semiconductor light emitting element 1050' in the cell 2050 by applying a voltage to the assembly electrode 2020. In this step, an electric field is formed, and in order to form the electric field, voltage signals of different polarities from each other can be applied to the adjacent assembly electrodes 2020.

[0186] In the existing substrate for manufacturing a display device, a pair of assembly electrodes which are arranged adjacent to each other and to which voltage signals of different polarities from each other are applied are formed to overlap with cells arranged in one row or column, so that assembly of the semiconductor light emitting element of a specific line is involved in a specific assembly electrode. However, the substrate 2000 for manufacturing a display device of the present application includes an assembly electrode which involves assembly of the semiconductor light emitting element of two lines. Specifically, the substrate 2000 for manufacturing a display device includes a first assembly electrode 2020a which overlaps with the cells 2050 constituting one row or column, and a second assembly electrode 2020b which overlaps with the cells 2050 constituting adjacent rows or columns different from each other at the same time, and as described above, the second assembly electrode 2020b can involve assembly of the semiconductor light emitting element of two lines.

[0187] On the other hand, the substrate 2000 for manufacturing a display device of the present application can be used to manufacture a display device 1000 including semiconductor light emitting elements 1050' which emit light of different colors from each other. Specifically, in order to manufacture the display device 1000 constituted by the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c described above, the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be assembled to the substrate 2000 for manufacturing a display device. The first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be formed in different shapes from each other, and the cells 2050 can also be formed in shapes corresponding to the respective semiconductor light emitting elements. In this case, the steps (a) to (c) described above can be performed on the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c together.

[0188] That is, instead of assembling by color to different substrates as in the past or assembling by color sequentially to the same substrate, the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be dropped into the fluid chamber at one time, and self-assembly of the first to third semiconductor light emitting elements 1050'a, 1050'b, 1050'c can be performed at the same time. Thus, the number of times of the one-time transfer process by self-assembly is reduced.

[0189] According to the present application, after self-assembly, a step of transferring the semiconductor light emitting elements 1050' disposed on the substrate 2000 to a wiring substrate can be performed. This means a secondary transfer process using a stamp. Since the number of times of the one-time transfer process is reduced, the number of times of the secondary transfer process will also be reduced.

[0190] Alternatively, after self-assembly, a step of forming a wiring electrode for lighting the semiconductor light emitting elements 1050' disposed on the substrate 2000 can be performed. In this case, the finally manufactured display device 1000 will include the assembly electrode 2020 and the wiring electrode.

[0191] As described above, the present application can form the cells 2050 for disposing the semiconductor light emitting elements 1050' at finer intervals by reducing the number of assembly electrodes 2020 to which a voltage is applied at the time of self-assembly, and thus can realize a high-resolution display device 1000. In addition, the present application can simplify the manufacturing process of the display device while saving manufacturing costs.

Claims

1. A substrate for manufacturing a display device, characterized in that, including: a base portion; a plurality of assembly electrodes extending in a direction and arranged on the base portion; a dielectric layer formed on the base portion so as to cover the plurality of assembly electrodes; a partition wall portion formed on the dielectric layer; and a plurality of cells formed by the partition wall portion into a plurality of rows and columns, in which semiconductor light emitting elements are arranged; the plurality of assembly electrodes extend in either of the direction of the rows and the direction of the columns and overlap the plurality of cells in the direction in which they extend; the plurality of assembly electrodes include: a first assembly electrode that overlaps the plurality of cells constituting one row; and a second assembly electrode that overlaps the plurality of cells constituting adjacent rows that are different from each other; in the plurality of cells, the plurality of cells arranged in the same row have a first interval, and the plurality of cells arranged in the same column have a second interval; the plurality of assembly electrodes extend in a direction that intersects the direction of the narrower of the first interval and the second interval.

2. The substrate for manufacturing a display device according to claim 1, wherein the second assembly electrode is arranged between the first assembly electrodes.

3. The substrate for manufacturing a display device according to claim 1, wherein the assembly electrode includes: a main portion that extends in the direction of the rows or the direction of the columns; and a protruding portion that is formed so as to protrude toward the cells from the main portion so as to overlap the cells; the first assembly electrode includes the protruding portion on one side of the main portion; the second assembly electrode includes the protruding portion on both sides of the main portion.

4. The substrate for manufacturing a display device according to claim 1, wherein at least two kinds of semiconductor light emitting elements, among the plurality of cells in which a first semiconductor light emitting element that emits light of a first color, a second semiconductor light emitting element that emits light of a second color, and a third semiconductor light emitting element that emits light of a third color are arranged, the same kind of semiconductor light emitting element is arranged in the plurality of cells arranged in the same row or column.

5. The substrate for manufacturing a display device according to claim 4, wherein the plurality of semiconductor light emitting elements of different kinds have different shapes from each other, the plurality of cells in which the plurality of semiconductor light emitting elements of different kinds are arranged are formed in a shape corresponding to each semiconductor light emitting element.

6. The substrate for manufacturing a display device according to claim 4, wherein the second assembly electrode overlaps the plurality of cells in which the plurality of semiconductor light emitting elements of different kinds are arranged. including:

7. A method for manufacturing a display device, comprising the steps of: (a) a step of moving a substrate including a plurality of assembly electrodes and a plurality of cells formed into a plurality of rows and columns to a predetermined assembly position by placing a plurality of semiconductor light emitting elements in a fluid chamber; (b) a step of moving the plurality of semiconductor light emitting elements in a direction by applying a magnetic force to the plurality of semiconductor light emitting elements from one side of the substrate; and (c) a step of arranging the moved semiconductor light emitting elements to the cells by applying a voltage to the plurality of assembly electrodes. ​ The plurality of assembly electrodes extend in either of the row direction and the column direction and overlap a plurality of cells in the direction of extension. The plurality of assembly electrodes include: a first assembly electrode overlapping a plurality of cells constituting one row; and a second assembly electrode overlapping a plurality of cells constituting adjacent rows different from each other at the same time. In the plurality of cells, a plurality of cells arranged in the same row have a first interval, and a plurality of cells arranged in the same column have a second interval. The plurality of assembly electrodes extend in a direction intersecting the direction of the narrower interval of the first interval and the second interval.

8. The manufacturing method of a display device according to claim 7, wherein the second assembly electrode is disposed between the first assembly electrodes.

9. The manufacturing method of a display device according to claim 7, wherein at least two kinds of semiconductor light emitting elements among a first semiconductor light emitting element emitting light of a first color, a second semiconductor light emitting element emitting light of a second color, and a third semiconductor light emitting element emitting light of a third color having different shapes from each other are disposed in the plurality of cells, the plurality of cells are formed in shapes corresponding to the plurality of semiconductor light emitting elements of different kinds from each other respectively, the steps of (a) to (c) are performed on the plurality of semiconductor light emitting elements of different kinds from each other at the same time.

10. The manufacturing method of a display device according to claim 7, wherein further comprising a step of transferring the plurality of semiconductor light emitting elements disposed on the substrate to a wiring substrate.

11. The manufacturing method of a display device according to claim 7, wherein further comprising a step of forming wiring electrodes for lighting the plurality of semiconductor light emitting elements disposed on the substrate.

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