Light-emitting device, method for manufacturing the same, and display device

Abstract

The present application provides a light-emitting device, a preparation method thereof, and a display device, relating to the field of display technologies. The light-emitting device can avoid the fluorescence quenching problem of the quantum dot light-emitting layer caused by the influence of the electron transport layer, thereby improving the light-emitting efficiency and enhancing the device performance. The light-emitting device includes: an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode which are stacked; the electron transport layer includes inorganic oxide nanoparticles and a porous framework structure, and the inorganic oxide nanoparticles are anchored in the pores of the porous framework structure; the porous framework structure is configured to be formed by a ligand reaction; the structural general formula of the ligand includes: A-X-Q; A is a coordination group and is configured to have a coordination effect with the inorganic oxide nanoparticles, X is a regulating group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and in particular, to a light-emitting device, a preparation method thereof, and a display device. Background Art

[0002] A Quantum Dots Light Emitting Diode (QLED) device with a fluorescent quantum dot as a light-emitting layer is a display and light-emitting device with great potential. Currently, a quantum dot is mostly used as the light-emitting layer, an organic substance is used as the hole transport layer, and an inorganic metal oxide nanoparticle (such as a zinc oxide nanoparticle) is used as the electron transport layer to form a hybrid "sandwich structure", thereby forming an effective QLED device. The device performance of a QLED device with a cadmium-containing quantum dot as the light-emitting layer has reached the current development level of organic light-emitting diode devices.

[0003] However, in this QLED device, the electron transport layer will affect the quantum dot light-emitting layer, resulting in fluorescence quenching of the quantum dots, reducing the light-emitting efficiency, and ultimately affecting the device performance. Summary of the Invention

[0004] Embodiments of the present application provide a light-emitting device, a preparation method thereof, and a display device. The light-emitting device can avoid the problem of fluorescence quenching of the quantum dot light-emitting layer caused by the influence of the electron transport layer, thereby improving the light-emitting efficiency and enhancing the device performance.

[0005] To achieve the above object, the embodiments of the present application adopt the following technical solutions:

[0006] On the one hand, a light-emitting device is provided, including: an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are stacked;

[0007] The electron transport layer includes inorganic oxide nanoparticles and a porous framework structure, and the inorganic oxide nanoparticles are anchored in the pores of the porous framework structure;

[0008] The porous framework structure is configured to be formed by a ligand reaction; the structural general formula of the ligand includes: A-X-Q;

[0009] Wherein, A is a coordination group and is configured to have a coordination effect with the inorganic oxide nanoparticles, X is an adjustment group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

[0010] Optionally, A includes an amino group, any one of

[0011] Optionally, X includes any one of a triphenylamine unit, a carbazole unit, and a pyridine unit.

[0012] Optionally, Q includes any one of a first group unit, a hydroxyl group, and a cyano group; wherein, the first group unit includes a first group and a second group, the first group includes a boronic acid group, and the second group includes a halogen.

[0013] Optionally, the ligand includes: any one of

[0014] Optionally, when the ligand includes the porous framework structure includes wherein, R represents

[0015] Optionally, when the ligand includes the porous framework structure includes

[0016] Optionally, when the ligand includes the porous framework structure includes

[0017] Optionally, the inorganic oxide nanoparticles include any one of zinc oxide nanoparticles, zirconia nanoparticles, alumina nanoparticles, magnesium zinc oxide nanoparticles, magnesium oxide nanoparticles, and titanium dioxide nanoparticles.

[0018] Optionally, the light-emitting device is an inverted type, and the material of the cathode includes indium tin oxide.

[0019] On the other hand, a display device is provided, including the above-mentioned light-emitting device.

[0020] On the other hand, a method for preparing the above-mentioned light-emitting device is provided, including:

[0021] forming an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode stacked on a substrate; wherein, the electron transport layer includes inorganic oxide nanoparticles and a porous framework structure, and the inorganic oxide nanoparticles are anchored in the pores of the porous framework structure; the porous framework structure is configured to be formed by ligand reaction; the structural general formula of the ligand includes: A-X-Q; A is a coordination group and is configured to produce a coordination effect with the inorganic oxide nanoparticles, X is a regulating group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

[0022] Optionally, forming the electron transport layer includes:

[0023] Form an inorganic oxide nanoparticle material and a ligand material respectively;

[0024] Mix the inorganic oxide nanoparticle material and the ligand material to form a precursor material;

[0025] Coat the precursor material on the substrate;

[0026] Subject the substrate with the precursor material formed thereon to microwave reaction to obtain the electron transport layer.

[0027] Optionally, subjecting the substrate with the precursor material formed thereon to microwave reaction includes:

[0028] Place the substrate with the precursor material formed thereon in a microwave generator and perform microwave reaction at a preset temperature for a preset time.

[0029] Optionally, the range of the preset temperature is 50 - 200 °C, and the preset time is 5 - 60 minutes.

[0030] Optionally, forming an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode stacked on the substrate includes:

[0031] Form a cathode, an electron transport layer, a quantum dot light-emitting layer, and an anode stacked in sequence on the substrate.

[0032] The above description is only an overview of the technical solution of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features, and advantages of the present application more obvious and understandable, the following specifically illustrates the specific implementation manners of the present application. Description of the Drawings

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained according to these drawings without creative efforts.

[0034] Figure 1 Schematically shows a schematic structural diagram of a light-emitting device;

[0035] Figure 2 Schematically shows a schematic structural diagram of another light-emitting device;

[0036] Figure 3 Schematically shows a schematic structural diagram of an electron transport layer; and

[0037] Figure 4A schematic structural diagram of yet another light-emitting device is schematically shown. Detailed implementation manners

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some but not all of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0039] In the embodiments of the present application, terms such as "first" and "second" are used to distinguish identical or similar items with basically the same functions and effects, and are only used to clearly describe the technical solutions of the embodiments of the present application, and should not be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. In addition, the meaning of "a plurality of" is two or more unless otherwise specifically defined.

[0040] In the related art, when an inorganic metal oxide is used as an electron transport layer, it will affect the quantum dot light-emitting layer. Taking zinc oxide as an example, the defect sites on the surface of zinc oxide, such as hydroxyl functional groups (-OH) and oxygen vacancies, will cause the device to degrade rapidly, resulting in a roll-off phenomenon of the device efficiency. At the same time, the hydroxyl groups and oxygen vacancies on the surface of the hydrophilic zinc oxide film layer will damage the surface ligands of the fluorescent quantum dots, resulting in fluorescence quenching of the quantum dots, thereby reducing the lifespan of the device and limiting the improvement of the device performance. In addition, in different device structures, the zinc oxide electron film layer will cause an imbalance in the injection of holes and electrons in the device, thus greatly limiting the performance of QLED devices.

[0041] Based on the above, the embodiments of the present application provide a light-emitting device. Referring to Figure 1 and Figure 2 as shown, the light-emitting device includes: an anode 10, a quantum dot light-emitting layer 11, an electron transport layer 12, and a cathode 13 that are stacked.

[0042] Referring to Figure 3 as shown, the electron transport layer includes inorganic oxide nanoparticles 1 and a porous framework structure 2, and the inorganic oxide nanoparticles 1 are anchored in the pores of the porous framework structure 2.

[0043] The porous framework structure is configured to be formed through a ligand reaction; the structural general formula of the ligand includes: A-X-Q; where A is a coordination group and is configured to have a coordination effect with the inorganic oxide nanoparticles, X is a regulating group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

[0044] The specific structure of the above-mentioned porous framework structure is not limited, and it can be obtained by reacting ligands. The above-mentioned ligands can form a porous framework structure through microwave reactions. Of course, it can also be obtained through other reactions, which are not limited here.

[0045] The specific material of the above-mentioned inorganic oxide nanoparticles is not limited. For example, the inorganic oxide nanoparticles can include inorganic metal oxide nanoparticles, such as zinc oxide nanoparticles or zirconium oxide nanoparticles, etc. Of course, other types can also be included.

[0046] The above-mentioned quantum dot light-emitting layer can include quantum dots, and the quantum dots can include a core-shell structure or a perovskite nanocrystal structure. Specifically, the core-shell structure can include a core layer and a coating layer surrounding the core layer. The material of the core layer can be cadmium selenide (CdSe) or cadmium sulfide (CdS), and the material of the coating layer can be any one of zinc sulfide (ZnS), zinc oxide (ZnO), and zinc selenide (ZnSe). A core-shell structure with cadmium selenide forming the core layer and zinc sulfide forming the coating layer is mostly used to form quantum dots. In order to achieve color display, the quantum dot light-emitting layer can include red quantum dots, green quantum dots, and blue quantum dots. Of course, the quantum dot light-emitting layer can also include only any one of red quantum dots, green quantum dots, and blue quantum dots to achieve single-color display.

[0047] According to the different preparation sequences, the above-mentioned light-emitting devices can be divided into Figure 1 the normal-type light-emitting device shown in Figure 2 and Figure 1 the inverted-type light-emitting device shown in. Specifically, referring to Figure 2 shown, the preparation sequence of the normal-type light-emitting device is to sequentially form the anode 10, the quantum dot light-emitting layer 11, the electron transport layer 12, and the cathode 13. Referring to

[0048] The inventors found through research that during the preparation process of the inverted-type light-emitting device, when the electron transport layer is directly coated on the cathode and the electron transport layer is in direct contact with the cathode, the finally formed light-emitting device is prone to poor morphology after lighting, and there is a problem that some areas do not emit light. In the inverted-type light-emitting device provided in the present application, the inorganic oxide nanoparticles can be anchored in the pores of the porous framework structure through coordination, so as to avoid direct contact between the inorganic oxide nanoparticles and the cathode, and thus improve the morphology of the inverted-type light-emitting device, thereby improving the device performance.

[0049] In the light-emitting device provided by the present application, the electron transport layer includes inorganic oxide nanoparticles and a porous framework structure. The inorganic oxide nanoparticles can be anchored in the pores of the porous framework structure through coordination, so as to avoid direct contact between the inorganic oxide nanoparticles and the quantum dot light-emitting layer, thereby avoiding the quenching of quantum dot luminescence caused by oxygen vacancies and groups on the surface of the inorganic oxide nanoparticles, improving the luminescence efficiency, and enhancing the device performance. In addition, the porous framework structure of the electron transport layer is formed by a ligand including a regulating group X, and the regulating group X can increase or decrease the electron mobility, that is, the electron mobility of the electron transport layer can be adjusted by the regulating group X, so as to improve the problem of unbalanced hole and electron injection in the light-emitting device and greatly enhance the device performance.

[0050] Optionally, in order to improve the coordination ability, A includes an amino group (-NH2), any one of them, so as to better embed the inorganic oxide nanoparticles in the pores of the porous framework structure.

[0051] Optionally, in order to better improve the problem of unbalanced hole and electron injection, X includes any one of a triphenylamine unit, a carbazole unit, and a pyridine unit. Among them, the triphenylamine unit and the carbazole unit are beneficial to hole transport, that is, they can reduce the electron mobility; the pyridine unit is beneficial to electron transport, that is, it can increase the electron mobility. The triphenylamine unit includes group, the carbazole unit includes group, and the pyridine unit includes group.

[0052] Optionally, in order to facilitate the realization of the framework structure, Q includes any one of a first group unit, a hydroxyl group (-OH), and a cyano group (-CN); among them, the first group unit includes a first group and a second group, the first group includes a borate group, and the second group includes a halogen. Exemplarily, Q between adjacent ligands can be bonded together to form a porous framework structure.

[0053] It should be noted that the borate group may include The first group may also include which is not limited here. The halogen may include chlorine (Cl), bromine (Br), iodine (I), etc.

[0054] Optionally, for the sake of convenience, the ligand includes: any one of them.

[0055] In one or more embodiments, when the ligand includes the porous framework structure includes wherein, R represents The chemical formula for the ligand to form the porous framework structure is as follows:

[0056] That is, the ligand can undergo a microwave reaction at 100 °C for 60 min to form a porous framework structure including . It should be noted that in the framework unit of the porous framework structure, the amino group has a strong coordination effect on the inorganic oxide nanoparticles, so that the inorganic oxide nanoparticles are disposed in the pores of the porous framework structure.

[0057] In one or more embodiments, when the ligand includes , the and Br between adjacent ligands can react to obtain a porous framework structure including .

[0058] In one or more embodiments, when the ligand includes , the -OH between adjacent ligands can react to obtain a porous framework structure including .

[0059] Optionally, the inorganic oxide nanoparticles include any one of zinc oxide nanoparticles, zirconium oxide nanoparticles, aluminum oxide nanoparticles, magnesium zinc oxide nanoparticles, magnesium oxide nanoparticles, and titanium dioxide nanoparticles. Among them, zinc oxide nanoparticles are more widely used.

[0060] Optionally, the above light-emitting device is an inverted type, and the material of the cathode includes indium tin oxide (ITO). The inverted light-emitting device provided in this application can avoid direct contact between the inorganic oxide nanoparticles and indium tin oxide, and thus can improve the morphology of the inverted light-emitting device, thereby enhancing the device performance.

[0061] Of course, the material of the cathode can also include other materials, such as silver, etc.

[0062] It should be noted that as shown in Figure 4 , the light-emitting device may further include a hole injection layer 14 and a hole transport layer 15 located between the anode 10 and the quantum dot light-emitting layer 11, where the hole injection layer 14 is closer to the anode 10 than the hole transport layer 15.

[0063] An embodiment of this application further provides a display device, including: the above light-emitting device.

[0064] The display device may be a QLED display device, or may also be any product or component with a display function such as a television, digital camera, mobile phone, tablet computer, etc. including the QLED display device; it has the advantages of high light extraction efficiency, no color crosstalk, high resolution, and good display performance.

[0065] Embodiments of the present application also provide a method for manufacturing the above-mentioned light-emitting device, and the method includes:

[0066] S01. Form an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are stacked on a substrate; wherein, the electron transport layer includes inorganic oxide nanoparticles and a porous framework structure, and the inorganic oxide nanoparticles are anchored in the pores of the porous framework structure; the porous framework structure is configured to be formed by a ligand reaction; the structural general formula of the ligand includes: A-X-Q; A is a coordination group and is configured to have a coordination effect with the inorganic oxide nanoparticles, X is a regulating group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

[0067] It should be noted that the above step S01 may include: sequentially forming an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode to form a normal-type light-emitting device; or, it may also include: sequentially forming a cathode, an electron transport layer, a quantum dot light-emitting layer, and an anode to form an inverted-type light-emitting device. There is no limitation here, and it can be selected according to actual requirements.

[0068] For the description of the structures and materials of each film layer in the light-emitting device involved in the above manufacturing method, reference can be made to the embodiments of the foregoing light-emitting device, and details are not described herein again.

[0069] In the light-emitting device formed by performing step S01, the electron transport layer includes inorganic oxide nanoparticles and a porous framework structure. The inorganic oxide nanoparticles can be anchored in the pores of the porous framework structure through a coordination effect, which can avoid the direct contact between the inorganic oxide nanoparticles and the quantum dot light-emitting layer, thereby avoiding the quenching of the quantum dot light emission caused by the oxygen vacancies and groups on the surface of the inorganic oxide nanoparticles, and further improving the light-emitting efficiency and enhancing the device performance. In addition, the porous framework structure of the electron transport layer is formed by a ligand including a regulating group X, and the regulating group X can increase or decrease the electron mobility, that is, the electron mobility of the electron transport layer can be adjusted through the regulating group X, so as to be able to improve the problem of unbalanced hole and electron injection in the light-emitting device and greatly enhance the device performance.

[0070] Optionally, the above formation of the electron transport layer includes:

[0071] S101. Respectively form an inorganic oxide nanoparticle material and a ligand material.

[0072] There is no limitation on the specific formation method of the inorganic oxide nanoparticle material and the ligand material here, and it can be determined according to the specific material.

[0073] S102. Mix the inorganic oxide nanoparticle material and the ligand material to form a precursor material.

[0074] S103. Coating a precursor material on a substrate.

[0075] Specifically, a spin coating method can be used to spin coat the precursor material on the substrate. If a normal structure light-emitting device is formed, before spin coating the precursor material on the substrate, an anode and a quantum dot light-emitting layer can be sequentially formed on the substrate first; then, the precursor material can be spin coated on the quantum dot light-emitting layer. If an inverted structure light-emitting device is formed, before spin coating the precursor material on the substrate, a cathode can be formed on the substrate first; then, the precursor material can be spin coated on the cathode.

[0076] S104. Subjecting the substrate with the precursor material to a microwave reaction to obtain an electron transport layer.

[0077] Here, the time and temperature of the microwave reaction are not limited.

[0078] By performing S101 - S104, an electron transport layer with a porous framework structure can be formed, and inorganic oxide nanoparticles can be anchored in the pores of the porous framework structure through coordination. This method is simple and easy to implement.

[0079] Further optionally, S104. Subjecting the substrate with the precursor material to a microwave reaction includes:

[0080] S104'. Placing the substrate with the precursor material in a microwave generator and performing a microwave reaction at a preset temperature for a preset time.

[0081] Optionally, the range of the preset temperature is 50 - 200 °C, and the preset time is 5 - 60 minutes. The specific temperature and time can be selected according to the precursor material. By way of example, the preset temperature can be 50 °C, 70 °C, 90 °C, 100 °C, 120 °C, 150 °C, 180 °C or 200 °C. The preset time can be 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes or 60 minutes.

[0082] Optionally, the above S01 of forming a stacked anode, quantum dot light-emitting layer, electron transport layer and cathode on the substrate includes:

[0083] S01'. Sequentially forming a stacked cathode, electron transport layer, quantum dot light-emitting layer and anode on the substrate; thereby, an inverted structure light-emitting device can be formed.

[0084] For ease of description, are respectively labeled as ligand A, ligand B and ligand C. The following takes ligand A, ligand B and ligand C as examples to illustrate the specific preparation process of the electron transport layer.

[0085] In one or more embodiments, the porous framework structure of the electron transport layer is formed by ligand A, and the inorganic oxide nanoparticles include zinc oxide nanoparticles. The preparation method of the electron transport layer includes:

[0086] S21. Form zinc oxide nanoparticles.

[0087] Exemplarily, 0.22 g of zinc acetate is dissolved in 10 mL of DMSO (dimethyl sulfoxide); 0.33 g of tetramethylammonium hydroxide is dissolved in 3.3 mL of ethanol and then dropped into the zinc acetate solution, and the reaction is carried out for 20 hours. About 1-fold ethyl acetate is added and precipitation starts, and continue to add until about 1.5-fold ethyl acetate is added and the precipitation no longer increases. Centrifuge at 4200 revolutions per minute at 20 °C for 5 minutes. Then pour out the supernatant, add 10 ml of ethanol, and ultrasonicate for 30 s or shake for 30 s to dissolve it, forming a zinc oxide ethanol solution.

[0088] S22. Add 300 μL of the xylene / dioxane mixed solution (20 mg / ml) of ligand A to the zinc oxide ethanol solution and stir for half an hour. Then add about 1 - 1.5-fold ethyl acetate, precipitate, and after centrifuging to remove the supernatant, dissolve it in 8 mL of ethanol to obtain a precursor solution.

[0089] S23. Spin-coat the precursor solution obtained in S22 at a speed of 2000 rpm. After the spin-coating is completed, place the substrate in a microwave generator and carry out a microwave reaction at 100 °C for 15 minutes to form an electron transport layer with a porous framework structure.

[0090] In one or more embodiments, the porous framework structure of the electron transport layer is formed by ligand B, and the inorganic oxide nanoparticles include zinc oxide nanoparticles. The preparation method of the electron transport layer includes:

[0091] S31. Form zinc oxide nanoparticles.

[0092] Exemplarily, 0.22 g of zinc acetate is dissolved in 10 mL of DMSO (dimethyl sulfoxide); 0.33 g of tetramethylammonium hydroxide is dissolved in 3.3 mL of ethanol and then dropped into the zinc acetate solution, and the reaction is carried out for 20 hours. About 1-fold ethyl acetate is added and precipitation starts, and continue to add until about 1.5-fold ethyl acetate is added and the precipitation no longer increases. Centrifuge at 4200 revolutions per minute at 20 °C for 5 minutes. Then pour out the supernatant, add 10 ml of ethanol, and ultrasonicate for 30 s or shake for 30 s to dissolve it, forming a zinc oxide ethanol solution.

[0093] S32. Add 300 μL of the toluene solution (20 mg / ml) of ligand B to the zinc oxide ethanol solution and stir for half an hour. Then add about 1 - 1.5-fold ethyl acetate, precipitate, and after centrifuging to remove the supernatant, dissolve it in 8 mL of ethanol to obtain a precursor solution.

[0094] S33. Spin-coat the precursor solution obtained in S32 at a speed of 2000 rpm. After spin-coating is completed, place the substrate in a microwave generator and perform a microwave reaction at 70 °C for 30 minutes to form an electron transport layer with a porous framework structure.

[0095] In one or more embodiments, the porous framework structure of the electron transport layer is formed by ligand C, and the inorganic oxide nanoparticles include zinc oxide nanoparticles. The preparation method of the electron transport layer includes:

[0096] S41. Form zinc oxide nanoparticles.

[0097] Exemplarily, 0.22 g of zinc acetate is dissolved in 10 mL of DMSO (dimethyl sulfoxide); 0.33 g of tetramethylammonium hydroxide is dissolved in 3.3 mL of ethanol and then dropped into the zinc acetate solution, and the reaction is carried out for 20 hours. After adding about 1-fold ethyl acetate, precipitation starts, and continue to add until the precipitation no longer increases after adding about 1.5-fold ethyl acetate. Centrifuge at 4200 rpm at 20 °C for 5 minutes. Then pour out the supernatant, add 10 ml of ethanol, and ultrasonicate for 30 s or shake for 30 s to dissolve it to form a zinc oxide ethanol solution.

[0098] S42. Add 300 μl of a toluene solution (20 mg / ml) of ligand C to the zinc oxide ethanol solution and stir for half an hour. Then add about 1 - 1.5-fold ethyl acetate, precipitate, and after centrifuging to remove the supernatant, dissolve it in 8 mL of ethanol to obtain a precursor solution.

[0099] S43. Spin-coat the precursor solution obtained in S42 at a speed of 2000 rpm. After spin-coating is completed, place the substrate in a microwave generator and perform a microwave reaction at 120 °C for 60 minutes to form an electron transport layer with a porous framework structure.

[0100] As used herein, the terms "one embodiment", "an embodiment" or "one or more embodiments" mean that the specific features, structures or characteristics described in connection with the embodiments are included in at least one embodiment of the present application. In addition, please note that the examples of the phrase "in one embodiment" herein do not necessarily all refer to the same embodiment.

[0101] In the specification provided herein, a large number of specific details are set forth. However, it can be understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures and technologies are not shown in detail so as not to obscure the understanding of this specification.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than limiting them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A light-emitting device, wherein, Comprising: An anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode which are stacked; The electron transport layer comprises inorganic oxide nanoparticles and a porous framework structure, and the inorganic oxide nanoparticles are anchored in the pores of the porous framework structure; The porous framework structure is configured to be formed by a ligand reaction; The structural general formula of the ligand comprises: A-X-Q; Wherein, A is a coordination group and is configured to have a coordination effect with the inorganic oxide nanoparticles, X is a regulating group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

2. The light-emitting device according to claim 1, wherein, A includes an amino group, any one of 3. The light-emitting device according to claim 1, wherein, X comprises any one of a triphenylamine unit, a carbazole unit, and a pyridine unit.

4. The light-emitting device according to claim 1, wherein, Q comprises any one of a first group unit, a hydroxyl group, and a cyano group; wherein, the first group unit comprises a first group and a second group, the first group comprises a borate group, and the second group comprises a halogen.

5. The light-emitting device according to claim 1, wherein, The ligand comprises: Any one of 6. The light-emitting device according to claim 5, wherein, In the case where the ligand comprises the porous framework structure comprises wherein R represents 7. The light-emitting device according to claim 5, wherein, In the case where the ligand includes the porous framework structure includes 8. The light-emitting device according to claim 5, wherein, In the case where the ligand includes the porous framework structure includes 9. The light-emitting device according to claim 1, wherein, The inorganic oxide nanoparticles comprise any one of zinc oxide nanoparticles, zirconium oxide nanoparticles, aluminum oxide nanoparticles, magnesium zinc oxide nanoparticles, magnesium oxide nanoparticles, and titanium dioxide nanoparticles.

10. The light-emitting device according to claim 1, wherein, The light-emitting device is an inverted type, and the material of the cathode comprises indium tin oxide.

11. A display device, wherein, Comprising: The light-emitting device according to any one of claims 1-10.

12. A method for manufacturing a light-emitting device according to any one of claims 1-10, wherein, Comprising: Forming an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode which are stacked on a substrate; wherein, the electron transport layer comprises inorganic oxide nanoparticles and a porous framework structure, and the inorganic oxide nanoparticles are anchored in the pores of the porous framework structure; the porous framework structure is configured to be formed by a ligand reaction; the structural general formula of the ligand comprises: A-X-Q; A is a coordination group and is configured to have a coordination effect with the inorganic oxide nanoparticles, X is a regulating group and is configured to increase or decrease the electron mobility, and Q is a framework group and is configured to form a framework structure.

13. The manufacturing method according to claim 12, wherein, Forming the electron transport layer comprises: Respectively forming an inorganic oxide nanoparticle material and a ligand material; Mixing the inorganic oxide nanoparticle material and the ligand material to form a precursor material; Coating the precursor material on the substrate; Performing a microwave reaction on the substrate having the precursor material to obtain the electron transport layer.

14. The manufacturing method according to claim 13, wherein, The performing a microwave reaction on the substrate having the precursor material comprises: Placing the substrate having the precursor material in a microwave generator and performing a microwave reaction at a preset temperature for a preset time.

15. The manufacturing method according to claim 14, wherein, The range of the preset temperature is 50-200 °C, and the preset time is 5-60 minutes.

16. The preparation method according to claim 12, wherein, The forming an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode which are stacked on a substrate comprises: Sequentially forming a cathode, an electron transport layer, a quantum dot light-emitting layer, and an anode which are stacked on a substrate.

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