Display Devices

Abstract

A display device is provided. The display device includes: a base component; a first dam member, a first supporting member, a second dam member, and a second supporting member, which are located in a non-display area on the base component; a light emitting element, which is disposed in a display area on the base component; a first encapsulation layer, which is located on the light emitting element; a wavelength conversion pattern, which is disposed on the first encapsulation layer to overlap with the light emitting element; a color filter, which is disposed on and overlaps with the wavelength conversion pattern; and a second encapsulation layer, which is located on the color filter; wherein: the first dam member is located between the first supporting member and the display area; the first supporting member is located between the second dam member and the first dam member; the second dam member is located between the second supporting member and the first supporting member; an end portion of an inorganic layer included in the first encapsulation layer is located between the first supporting member and the first dam member; and an end portion of an inorganic layer included in the second encapsulation layer is located between the second supporting member and the second dam member.

Description

Technical Field

[0001] The present disclosure relates to a display device. Background Art

[0002] As multimedia develops, the importance of display devices has gradually increased. Therefore, various display devices, such as a liquid crystal display device (LCD) and an organic light emitting diode display device (OLED), have been developed.

[0003] Among these display devices, a self-luminous display device includes a self-luminous element, such as an organic light-emitting element. The self-luminous element may include two electrodes facing each other and an emission layer interposed between the two electrodes. When the self-luminous element is an organic light-emitting element, electrons and holes provided from the two electrodes recombine with each other in the emission layer to generate excitons, and light can be emitted while the generated excitons change from an excited state to a ground state.

[0004] Since the self-luminous display device does not require a light source such as a backlight unit, it has low power consumption, can be configured to be lightweight and thin, and has high-quality characteristics such as a wide viewing angle, high brightness and contrast, and a fast response speed. Therefore, the self-luminous display device has attracted attention as a next-generation display device. Summary of the invention

[0005] Technical issues

[0006] As a method of allowing each pixel of a display device to uniquely display one primary color, there may be a method of setting a color conversion pattern or a wavelength conversion pattern for each pixel on an optical path from a light source to a viewer.

[0007] Aspects of the present disclosure provide a display device whose display quality can be improved.

[0008] However, aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0009] Technical Solution

[0010] According to one aspect of the present disclosure, a display device is provided, which includes: a base component, in which a display area and a non-display area surrounding the display area are defined; a first dam member, a first supporting member, a second dam member, and a second supporting member, which are located on the base component and in the non-display area; a light emitting element, which is located on the base component and in the display area; a first encapsulation layer, which is located on the light emitting element; a wavelength conversion pattern, which is located on the first encapsulation layer and overlaps with the light emitting element; a color filter, which is located on the wavelength conversion pattern and overlaps with the wavelength conversion pattern; and a second encapsulation layer, which is located on the color filter, wherein the first dam member is located between the first supporting member and the display area, the first supporting member is located between the second dam member and the first dam member, the second dam member is located between the second supporting member and the first supporting member, an end of an inorganic layer included in the first encapsulation layer is located between the first supporting member and the first dam member, and an end of an inorganic layer included in the second encapsulation layer is located between the second supporting member and the second dam member.

[0011] In some embodiments, the first dam member may be disposed to surround the display area, the first supporting member may be disposed to surround the first dam member, the second dam member may be disposed to surround the first supporting member, and the second supporting member may be disposed to surround the second dam member.

[0012] In some embodiments, the second encapsulation layer may include a lower inorganic layer on the color filter, an organic layer on the lower inorganic layer, and an upper inorganic layer on the organic layer, and ends of the lower inorganic layer and the upper inorganic layer may be located between the second supporting member and the second dam member.

[0013] In some embodiments, a portion of the organic layer may be located between the second dam member and the first dam member.

[0014] In some embodiments, the display device may further include a bank pattern on the first encapsulation layer and surrounding the wavelength conversion pattern, wherein the bank pattern and at least one of the second supporting member and the second dam member may include the same material.

[0015] In some embodiments, the display device may further include an overcoat layer between the color filter and the wavelength conversion pattern, wherein the second supporting member may include the same material as the color filter or the overcoat layer.

[0016] In some embodiments, the display device may further include a bank pattern on the first encapsulation layer and surrounding the wavelength conversion pattern, wherein the second dam member may include the same material as at least one of the color filter, the overcoat layer, and the bank pattern.

[0017] In some embodiments, the first encapsulation layer may include a lower inorganic layer located on the light emitting element, an organic layer located on the lower inorganic layer, and an upper inorganic layer located on the organic layer, the lower inorganic layer and the upper inorganic layer may cover the first dam member, and an end of the lower inorganic layer may be located between the first dam member and the first supporting member.

[0018] In some embodiments, the first dam member may include a first dam and a second dam spaced apart from each other, and a portion of the organic layer may be located in a space between the first dam and the second dam.

[0019] In some embodiments, an end portion of the upper inorganic layer may be located between the first dam member and the first supporting member.

[0020] In some embodiments, an end portion of the upper inorganic layer may be located outside the second supporting member, and the second supporting member may be located between the end portion of the upper inorganic layer and the display region.

[0021] In some embodiments, the display device may further include a connection pad on the base component and in the non-display area, wherein the second support member may be between the connection pad and the display area, and the connection pad may not overlap the second encapsulation layer.

[0022] In some embodiments, the display device may further include: a first covering layer located between the first encapsulation layer and the wavelength conversion pattern; and a second covering layer located between the wavelength conversion pattern and the color filter, wherein the first covering layer and the second covering layer may contact each other in the non-display area, and the first covering layer and the second covering layer may overlap with the connecting pad.

[0023] In some embodiments, the display device may further include a covering layer located between the wavelength conversion pattern and the color filter, wherein the inorganic layer included in the first encapsulation layer and the covering layer may contact each other in the non-display area, and the inorganic layer included in the first encapsulation layer and the covering layer may overlap with the connecting pad.

[0024] According to another aspect of the present disclosure, a display device is provided, which includes: a base component, in which a display area and a non-display area surrounding the display area are defined; a dam member and a support member, which are located on the base component and in the non-display area; a connecting pad, which is located on the base component and in the non-display area; a light-emitting element, which is located on the base component and in the display area; an inorganic layer, which is located on the light-emitting element; a wavelength conversion pattern, which is located on the inorganic layer and overlaps with the light-emitting element; a covering layer, which is located on the wavelength conversion pattern; and a color filter, which is located on the covering layer and overlaps with the wavelength conversion pattern, wherein the dam member is located between the support member and the display area, the support member is located between the connecting pad and the dam member, the inorganic layer and the covering layer are in contact with each other in the non-display area, and the inorganic layer and the covering layer overlap with the connecting pad.

[0025] In some other embodiments, openings exposing the connection pads may be defined in the inorganic layer and the cover layer.

[0026] In some other embodiments, the display device may further include: a bank pattern between the inorganic layer and the capping layer and in contact with the wavelength conversion pattern, wherein the dam member and the bank pattern may include the same material.

[0027] In some other embodiments, the display device may further include: an overcoat layer between the color filter and the wavelength conversion pattern, wherein the support member may include the same material as at least one of the bank pattern, the color filter, and the overcoat layer.

[0028] In some other embodiments, the refractive index of the overcoat layer can be lower than the refractive index of the wavelength conversion pattern.

[0029] In some other embodiments, the display device may further include: an encapsulation layer, which is located on the color filter and includes a lower inorganic layer, an upper inorganic layer, and an organic layer located between the lower inorganic layer and the upper inorganic layer, wherein the dam member may overlap with the lower inorganic layer and the upper inorganic layer, and the connecting pad and the supporting member may not overlap with the lower inorganic layer and the upper inorganic layer.

[0030] Details of other embodiments are described in the detailed description and are shown in the accompanying drawings.

[0031] Beneficial Effects

[0032] According to the embodiments of the present disclosure, a display device having improved display quality and improved reliability can be provided.

[0033] The effects of the present disclosure are not limited to the above-mentioned effects, and various other effects are included in the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1is a schematic plan view of a display device according to an embodiment.

[0035] Figure 2 yes Figure 1 An enlarged plan view of portion Q1.

[0036] Figure 3 It is shown Figure 2 A plan view of a modified example of .

[0037] Figure 4 It is along Figure 2 A cross-sectional view of a display device according to an embodiment taken along line X1 - X1 ′.

[0038] Figure 5 yes Figure 4 An enlarged cross-sectional view of the Q5 section.

[0039] Figure 6 is a plan view showing a schematic arrangement of partition wall patterns in a display device according to an embodiment.

[0040] Figure 7 is a plan view showing a schematic arrangement of wavelength conversion patterns and light-transmitting patterns in a display device according to an embodiment.

[0041] Figure 8 is a plan view showing a schematic arrangement of first and second color filters in a display device according to an embodiment.

[0042] Fig. 9 is a plan view showing a schematic arrangement of a third color filter and a color pattern in a display device according to an embodiment.

[0043] Fig.10 yes Figure 1 An enlarged plan view of portion Q3.

[0044] Fig.11 It is along Fig.10 A cross-sectional view of the display device taken along line X3-X3'.

[0045] Figure 12 to Figure 14 They are used to describe manufacturing Fig.11 A view of the process of the first encapsulation layer is shown in FIG.

[0046] Figures 15 to 17 They are used to describe manufacturing Fig.11 A view of the process of the second encapsulation layer is shown in FIG.

[0047] Fig.18 It is shown Fig.11 sectional view of a modified example of the display device shown in FIG.

[0048] Fig.19 It is shown Fig.11 2 is a cross-sectional view of another modified example of the display device shown in FIG.

[0049] Figure 20 to Figure 24 Each shows Fig.11 sectional views of other modified examples of the display device shown in .

[0050] Fig.25 is along Figure 2 FIG. 1 is a cross-sectional view of a display device according to another embodiment taken along line X1 - X1 ′.

[0051] Fig.26 is along Fig.10 A cross-sectional view of a display device according to another embodiment taken along line X3 - X3 ′.

[0052] Fig. 27 It is shown Fig.26 sectional view of a modified example of the display device shown in FIG.

[0053] Fig.28 It is shown Fig.26 2 is a cross-sectional view of another modified example of the display device shown in FIG.

[0054] Figure 29 to Figure 33 Each shows Fig.26 sectional views of other modified examples of the display device shown in . DETAILED DESCRIPTION

[0055] The advantages and features of the present disclosure and the methods for achieving the advantages and features will become apparent from the embodiments that will be described in detail later with reference to the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below and can be implemented in various different forms, which will only be provided to make the present disclosure complete and allow ordinary technicians in the field to which the present disclosure belongs to fully recognize the scope of the present disclosure, and the present disclosure will be limited by the scope of the claims.

[0056] The phrase "an element or layer is on another element or layer" includes both: a case where one element or layer is directly on another element or layer; and a case where one element or layer is on another element or layer and other elements or layers are interposed therebetween. On the other hand, the phrase "an element or layer is directly on another element or layer" means that no other element or layer is interposed between one element or layer and another element or layer. Throughout the specification, the same components will be denoted by the same reference numerals.

[0057] Spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used to easily describe the relationship between one element or component and other elements or components shown in the drawings. Spatially relative terms are to be understood as terms that include different orientations of elements when in use in addition to the orientation shown in the drawings. For example, an element described as "below or below" another element may be placed above the other element when the elements shown in the drawings are turned over. Thus, the term "below" may include both below and above orientations.

[0058] The terms "first", "second", "third", "fourth", etc. are used to describe various components, but these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, within the technical spirit of the present disclosure, the first component to be mentioned below may be any one of the second component, the third component and the fourth component.

[0059] The embodiments described herein will be described with reference to the plan views and cross-sectional views which are ideal schematic diagrams of the present disclosure. Therefore, the form of the exemplary drawings may change due to manufacturing technology, tolerances, etc. Therefore, the embodiments of the present disclosure are not limited to the specific forms shown in the drawings, and also include changes in form resulting from the manufacturing process. Therefore, the regions shown in the drawings have schematic properties, and the shapes of the regions shown in the drawings are intended to illustrate the specific forms of the regions of the elements, rather than to limit the scope of the present disclosure.

[0060] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0061] Figure 1 is a schematic plan view of a display device according to an embodiment, Figure 2 yes Figure 1 An enlarged plan view of part Q1, and Figure 3 It is shown Figure 2 A plan view of a modified example of .

[0062] refer to Figures 1 to 3 The display device 1 can be applied to various electronic devices, for example, small and medium-sized electronic devices such as tablet personal computers (PCs), smart phones, vehicle navigation units, cameras, central information displays (CIDs) provided in vehicles, wristwatch-type electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles; and medium and large electronic devices such as televisions, external billboards, monitors, personal computers, and laptop computers. These electronic devices are provided only as examples, and the display device 1 may also be adopted in other electronic devices without departing from the concept of the present disclosure.

[0063] The display device 1 may include a display panel 10. In some embodiments, the display device 1 may further include a flexible circuit board FPC and a driving chip IC.

[0064] The display panel 10 may have a rectangular shape in a plan view. The display panel 10 may include two first sides extending in a first direction X and two second sides extending in a second direction Y intersecting the first direction X. The angle at which the first side and the second side of the display device 1 meet may be a right angle, but is not limited thereto, and may also be curved. In some embodiments, the length of the first side and the length of the second side may be different from each other, but the present disclosure is not limited thereto. The shape of the display panel 10 in a plan view is not limited to the shape shown, and may also be a circle or other shapes.

[0065] Unless otherwise defined, the terms "upper", "upper side", "upper part", "top" and "upper surface" as used herein refer to the direction pointed by the arrow of the third direction Z intersecting the first direction X and the second direction Y described in the drawings, and the terms "below", "lower side", "lower part", "bottom" and "lower surface" as used herein refer to the direction opposite to the direction pointed by the arrow of the third direction Z described in the drawings.

[0066] The display panel 10 may include a display area DA where an image is displayed and a non-display area NDA where an image is not displayed.

[0067] A plurality of emission areas and a non-emission area NLA may be defined in the display area DA of the display panel 10. In some embodiments, a first emission area LA1, a second emission area LA2, and a third emission area LA3 may be defined in the display area DA of the display panel 10. The first emission area LA1, the second emission area LA2, and the third emission area LA3 may be areas in which light generated by a light emitting element of the display panel 10 is emitted to the outside of the display panel 10, and the non-emission area NLA may be an area in which light is not emitted to the outside of the display panel 10.

[0068] In some embodiments, the light emitted to the outside from the first emission area LA1, the second emission area LA2, and the third emission area LA3 may have different colors. For example, the light emitted to the outside from the first emission area LA1 may be light of a first color, the light emitted from the second emission area LA2 may be light of a second color, the light emitted from the third emission area LA3 may be light of a third color, and the light of the first color, the light of the second color, and the light of the third color may have different colors.

[0069] In some embodiments, the light of the third color may be blue light having a peak wavelength in the range of 440 nm to about 480 nm, and the light of the first color may be red light having a peak wavelength in the range of 610 nm to 650 nm. In addition, the light of the second color may be green light having a peak wavelength in the range of 530 nm to 570 nm. However, the present disclosure is not limited thereto, and the light of the first color may be green light and the light of the second color may be red light.

[0070] In some embodiments, the first emission area LA1, the second emission area LA2, and the third emission area LA3 may form a group, and a plurality of groups may be defined in the display area DA.

[0071] In some embodiments, elements and circuits for displaying images, such as pixel circuits (such as switching elements), may be provided in the display area DA of the display panel 10, and a self-luminous element and a pixel defining layer defining the above-mentioned first emission area LA1, second emission area LA2, third emission area LA3, and non-emission area NLA may be included in the display area DA. In an embodiment, the self-luminous element may include at least one of an organic light-emitting diode, a quantum dot light-emitting diode, a micro light-emitting diode based on an inorganic material (e.g., a micro-LED), and a nano light-emitting diode based on an inorganic material (e.g., a nano-LED). Hereinafter, for ease of explanation, the case where the self-luminous element is an organic light-emitting diode will be described by way of example.

[0072] In some embodiments, Figure 2 As shown in FIG. 1 , the first emission area LA1, the second emission area LA2, and the third emission area LA3 may be sequentially positioned along the first direction X. In some embodiments, in the display area DA, the first emission area LA1, the second emission area LA2, and the third emission area LA3 may form a group and may be repeatedly arranged along the first direction X and the second direction Y.

[0073] However, the present disclosure is not limited thereto, and the arrangement of the first emission area LA1, the second emission area LA2, and the third emission area LA3 may be variously changed. Figure 3 As shown in FIG. 1 , the first and second emission regions LA1 and LA2 may be adjacent to each other along the first direction X, and the third emission region LA3 may be located along the second direction Y at one side of the first and second emission regions LA1 and LA2.

[0074] In the following, the following will describe Figure 2 The case where the first emission area LA1, the second emission area LA2, and the third emission area LA3 are arranged is shown as an example.

[0075] In some embodiments, the non-display area NDA of the display panel 10 may be located around the display area DA, and may surround the display area DA.

[0076] A dam member and a supporting member may be disposed in the non-display area NDA of the display panel 10 .

[0077] The dam member may block the organic material (or monomer) from overflowing during the process of forming the encapsulation layer disposed in the display area DA, and thus, may prevent the organic material of the encapsulation layer from extending toward the edge of the display panel 10 .

[0078] In some embodiments, the dam member may include a first dam member IDM and a second dam member ODM.

[0079] Both the first dam member IDM and the second dam member ODM may be located in the non-display area NDA of the display panel 10 , and the first dam member IDM may be located relatively closer to the display area DA than the second dam member ODM.

[0080] In some embodiments, the first dam member IDM may be arranged to completely surround the display area DA in a plan view, and the second dam member ODM may be arranged to completely surround the display area DA and the first dam member IDM in a plan view.

[0081] The support member may be used to support a structure of the display panel 10 , such as a mask, during the process of forming the encapsulation layer.

[0082] In some embodiments, the support member may include a first support member IS and a second support member OS.

[0083] Both the first supporting member IS and the second supporting member OS may be located in the non-display area NDA of the display panel 10 , and the first supporting member IS may be positioned relatively closer to the display area DA than the second supporting member OS.

[0084] In some embodiments, the first supporting member IS may be located between the first dam member IDM and the second dam member ODM in a plan view, and may be disposed to completely surround the display area DA and the first dam member IDM.

[0085] In some embodiments, the second supporting member OS may be located outside the first supporting member IS in a plan view with the second dam member ODM interposed therebetween, and may be disposed to completely surround the second dam member ODM, the first supporting member IS, the first dam member IDM, and the display area DA.

[0086] A plurality of connection pads PD may be located in the non-display area NDA of the display panel 10. The connection pads PD may be electrically connected to a pixel circuit located in the display area DA via a connection line or the like.

[0087] In some embodiments, the connection pad PD may be located outside the second supporting member OS. That is, the connection pad PD may be located relatively farther from the display area DA than the second supporting member OS, and the second supporting member OS may be located between the connection pad PD and the display area DA.

[0088] The flexible circuit board FPC may be connected to the connection pads PD of the display panel 10. The flexible circuit board FPC may electrically connect a circuit board or the like supplying a signal and power for driving the display device 1 and the display panel 10 to each other.

[0089] The driver chip IC may be electrically connected to a circuit board, etc. to receive data, signals, etc. In some embodiments, the driver chip IC may be a data driver chip, and may receive a data control signal, image data, etc. from a circuit board, etc., and generate and output a data voltage corresponding to the image data.

[0090] In some embodiments, the driver chip IC may be mounted on the flexible circuit board FPC. For example, the driver chip IC may be mounted on the flexible circuit board FPC in the form of a chip on film (COF).

[0091] The data voltage provided from the driving chip IC, the power provided from the circuit board, and the like may be transferred to the pixel circuit and the like of the display panel 10 via the flexible circuit board FPC and the connection pad PD.

[0092] Figure 4 is along Figure 2 A cross-sectional view of a display device according to an embodiment taken along line X1-X1', Figure 5 yes Figure 4 An enlarged cross-sectional view of part Q5, Figure 6 is a plan view showing a schematic arrangement of partition walls in a display device according to an embodiment, Figure 7 is a plan view showing a schematic arrangement of a wavelength conversion pattern and a light-transmitting pattern in a display device according to an embodiment, Figure 8 is a plan view showing a schematic arrangement of a first color filter and a second color filter in a display device according to an embodiment, Fig. 9 is a plan view showing a schematic arrangement of a third color filter and a color pattern in a display device according to an embodiment, Fig.10 yes Figure 1 an enlarged plan view of part Q3, and Fig.11 It is along Fig.10 A cross-sectional view of the display device taken along line X3-X3'.

[0093] In the following, reference will be made to Figures 4 to 11 The stacking structure of the display device 1 is described.

[0094] The base component 110 may be made of a light-transmitting material. In some embodiments, the base component 110 may be a glass substrate or a plastic substrate. When the base component 110 is a plastic substrate, the base component 110 may be flexible.

[0095] In some embodiments, as described above, a plurality of emission areas LA1 , LA2 , and LA3 and a non-emission area NLA may be defined in the base member 110 .

[0096] The buffer layer 111 may be further disposed on the base member 110. The buffer layer 111 may be disposed on the base member 110 and may be disposed in the display area DA and the non-display area NDA. The buffer layer 111 may block foreign matter (eg, moisture) from penetrating through the base member 110. For example, the buffer layer 111 may include an inorganic material such as SiO 2 、SiN x Or SiON, and can be formed as a single layer or a multilayer.

[0097] The light blocking pattern BML may be located on the buffer layer 111. The light blocking pattern BML may block light and may have conductivity. The light blocking pattern BML may block external light or light of a light emitting element from being introduced into the semiconductor layer ACT to be described later, and thus, leakage current generated by light in the thin film transistor TL to be described later may be reduced or minimized. It has been illustrated in the drawings that the light blocking pattern BML is located in the display area DA and not in the non-display area NDA, but the light blocking pattern BML may also be located in the non-display area NDA.

[0098] In some embodiments, the light blocking pattern BML may be made of a material that blocks light and has conductivity, and may have a single-layer or multi-layer structure. For example, the light blocking pattern BML may be a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO), or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al 2 O 3 ) stacking structure, but not limited to this.

[0099] In some embodiments, a plurality of light blocking patterns BML may be provided to correspond to respective semiconductor layers ACT and may overlap the semiconductor layer ACT. In some embodiments, a width of the light blocking pattern BML may be greater than a width of the semiconductor layer ACT.

[0100] In some embodiments, the light blocking pattern BML may be a portion of a data line, a power supply line, a line electrically connecting a thin film transistor (not shown) and a thin film transistor TL (shown in the figure) to each other, etc. In some embodiments, the light blocking pattern BML may be made of a material having a lower resistance than the second conductive layer or the source electrode SE and the drain electrode DE included in the second conductive layer.

[0101] The first insulating layer 113 may be located on the light blocking pattern BML. In some embodiments, the first insulating layer 113 may be located in the display area DA and the non-display area NDA. The first insulating layer 113 may cover the light blocking pattern BML. In some embodiments, the first insulating layer 113 may include an inorganic material, such as SiO 2 、SiN x 、SiON、Al 2 O 3 、TiO 2 、 2 O、HfO 2 or ZrO 2 .

[0102] The semiconductor layer ACT may be positioned on the first insulating layer 113. In some embodiments, the semiconductor layer ACT may be disposed to correspond to the first emission area LA1, the second emission area LA2, and the third emission area LA3 in the display area DA, respectively.

[0103] In some embodiments, the semiconductor layer ACT may include an oxide semiconductor. For example, the semiconductor layer ACT may be made of Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc., which are Zn oxide-based materials; and the semiconductor layer ACT may be an In-Ga-Zn-O (IGZO) semiconductor in which metals such as indium (In) and gallium (Ga) are contained in ZnO. However, the present disclosure is not limited thereto, and the semiconductor layer ACT may include amorphous silicon, polycrystalline silicon, etc.

[0104] In some embodiments, the semiconductor layer ACT may be disposed to overlap the corresponding light blocking pattern BML, and thus, generation of photocurrent in the semiconductor layer ACT may be suppressed.

[0105] The first conductive layer may be disposed on the semiconductor layer ACT and may include a gate electrode GE and a wiring layer WR. The gate electrode GE may be located in the display area DA and may be disposed to overlap the semiconductor layer ACT. The wiring layer WR may include some of the lines that electrically connect the connection pad PD and the elements (e.g., thin film transistor TL, light emitting element, etc.) located in the display area DA to each other.

[0106] The gate electrode GE and the wiring layer WR may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and copper (Cu) considering adhesion with adjacent layers, surface flatness of layers to be stacked, processability, etc., and may be formed as a single layer or a multilayer.

[0107] In the display area DA, the gate insulating layer 115 may be located between the semiconductor layer ACT and the first conductive layer or between the semiconductor layer ACT and the gate electrode GE. In some embodiments, the gate electrode GE and the gate insulating layer 115 may be used as a mask to mask the channel region of the semiconductor layer ACT, and the width of the gate electrode GE and the gate insulating layer 115 may be smaller than the width of the semiconductor layer ACT.

[0108] In some embodiments, the gate insulating layer 115 may be patterned to have substantially the same shape as the gate electrode GE or the first conductive layer. In some embodiments, the gate insulating layer 115 may have a width greater than that of the gate electrode GE or the first conductive layer.

[0109] In some embodiments, the gate insulating layer 115 may include an inorganic material. For example, the gate insulating layer 115 may include the inorganic material exemplified in the description of the first insulating layer 113 .

[0110] In the non-display area NDA, the gate insulating layer 115 may be located between the wiring layer WR and the first insulating layer 113 .

[0111] The second insulating layer 117 covering the semiconductor layer ACT and the gate electrode GE may be located on the gate insulating layer 115. The second insulating layer 117 may be located in the display area DA and the non-display area NDA. In some embodiments, the second insulating layer 117 may function as a planarization layer providing a flat surface.

[0112] In some embodiments, the second insulating layer 117 may include an organic material. For example, the second insulating layer 117 may include at least one of photo acryl (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, polyparaxylene, fluorine-based polymer, epoxy resin, benzocyclobutene series resin, siloxane series resin, and silane resin, but is not limited thereto.

[0113] The second conductive layer may be positioned on the second insulating layer 117 , and may include a source electrode SE, a drain electrode DE, a power supply line VSL, and a first pad electrode PD1 connecting the pad PD.

[0114] The source electrode SE and the drain electrode DE may be located in the display area DA, and may be disposed to be spaced apart from each other.

[0115] Each of the drain electrode DE and the source electrode SE may pass through the second insulating layer 117 to be connected to the semiconductor layer ACT.

[0116] In some embodiments, the source electrode SE may pass through the first insulating layer 113 and the second insulating layer 117 to be connected to the light blocking pattern BML. When the light blocking pattern BML is part of a line that transfers a signal, a voltage, etc., the source electrode SE may be connected to and electrically coupled to the light blocking pattern BML to receive a voltage supplied to the line, etc. Alternatively, when the light blocking pattern BML is a floating pattern instead of a separate line, the voltage supplied to the source electrode SE may be transferred to the light blocking pattern BML.

[0117] The semiconductor layer ACT, the gate electrode GE, the source electrode SE and the drain electrode DE described above may constitute a thin film transistor TL as a switching element. In some embodiments, the thin film transistor TL may be located in the first emission area LA1, the second emission area LA2 and the third emission area LA3, respectively. In some embodiments, a portion of the thin film transistor TL may also be located in the non-emission area NLA.

[0118] The power supply line VSL may be located in the non-display area NDA. A driving voltage (eg, an ELVSS voltage) supplied to the cathode electrode CE may be supplied to the power supply line VSL.

[0119] The first pad electrode PD1 connecting the pad PD may be located in the non-display area NDA. In some embodiments, the first pad electrode PD1 may pass through the second insulating layer 117 to be electrically connected to or coupled to the wiring layer WR.

[0120] The source electrode SE, the drain electrode DE, the power supply line VSL, and the first pad electrode PD1 of the connection pad PD may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed in a multilayer or a single layer. In an embodiment, the source electrode SE, the drain electrode DE, the power supply line VSL, and the first pad electrode PD1 of the connection pad PD may have a multilayer structure of Ti / Al / Ti.

[0121] The third insulating layer 130 may be located on the second insulating layer 117. The third insulating layer 130 may cover the thin film transistor TL in the display area DA, and may expose a portion of the power supply line VSL in the non-display area NDA.

[0122] In some embodiments, the third insulating layer 130 may be a planarization layer. In some embodiments, the third insulating layer 130 may be formed as an organic layer. For example, the third insulating layer 130 may include an acrylic resin, an epoxy-based resin, an imide-based resin, an ester-based resin, etc. In some embodiments, the third insulating layer 130 may include a positive photosensitive material or a negative photosensitive material.

[0123] The first to third anode electrodes AE1, AE2, and AE3 may be located on the third insulating layer 130 in the display area DA. Also, the connection electrode CNE and the second pad electrode PD2 of the connection pad PD may be located on the third insulating layer 130 in the non-display area NDA.

[0124] The first anode electrode AE1 may overlap the first emission region LA1, and at least a portion of the first anode electrode AE1 may extend to the non-emission region NLA. The second anode electrode AE2 may overlap the second emission region LA2, and at least a portion of the second anode electrode AE2 may extend to the non-emission region NLA, and the third anode electrode AE3 may overlap the third emission region LA3, but at least a portion of the third anode electrode AE3 may extend to the non-emission region NLA. The first anode electrode AE1 may pass through the third insulating layer 130 to be connected to the drain electrode DE of the thin film transistor TL corresponding to the first anode electrode AE1, the second anode electrode AE2 may pass through the third insulating layer 130 to be connected to the drain electrode DE of the thin film transistor TL corresponding to the second anode electrode AE2, and the third anode electrode AE3 may pass through the third insulating layer 130 to be connected to the drain electrode DE of the thin film transistor TL corresponding to the third anode electrode AE3. In some embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be reflective electrodes. In this case, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be a metal layer including a metal (e.g., Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr). In another embodiment, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may further include a metal oxide layer stacked on the metal layer. In an embodiment, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may have a multilayer structure, for example, a two-layer structure such as indium tin oxide (ITO) / Ag, Ag / ITO, ITO / Mg, or ITO / MgF, or a three-layer structure such as ITO / Ag / ITO.

[0125] The connection electrode CNE may be electrically connected to the power supply line VSL in the non-display area NDA and may be in direct contact with the power supply line VSL.

[0126] The second pad electrode PD2 may be located on the first pad electrode PD1 in the non-display area NDA. The second pad electrode PD2 may be in direct contact with the first pad electrode PD1 and electrically connected to the first pad electrode PD1.

[0127] In some embodiments, the connecting electrode CNE and the second pad electrode PD2 may be made of the same material as the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3, and may be formed together with the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 during the process of manufacturing the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3.

[0128] The pixel defining layer 150 may be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. The pixel defining layer 150 may include an opening exposing the first anode electrode AE1, an opening exposing the second anode electrode AE2, and an opening exposing the third anode electrode AE3, and may define a first emission area LA1, a second emission area LA2, a third emission area LA3, and a non-emission area NLA. That is, the area of ​​the first anode electrode AE1 that is not covered by the pixel defining layer 150 and is exposed may be the first emission area LA1. Similarly, the area of ​​the second anode electrode AE2 that is not covered by the pixel defining layer 150 and is exposed may be the second emission area LA2, and the area of ​​the third anode electrode AE3 that is not covered by the pixel defining layer 150 and is exposed may be the third emission area LA3. In addition, the area in which the pixel defining layer 150 is located may be the non-emission area NLA.

[0129] In some examples, pixel defining layer 150 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0130] In some embodiments, the pixel defining layer 150 may overlap with the color pattern 250 described later. In addition, the pixel defining layer 150 may also overlap with the first color filter 231 and the second color filter 233.

[0131] The pixel defining layer 150 may also overlap with a bank pattern 310 which will be described later.

[0132] like Figure 4 and Fig.11 As shown in FIG. 1 , the emission layer OL may be located on the first anode electrode AE1 , the second anode electrode AE2 , and the third anode electrode AE3 .

[0133] In some embodiments, the emission layer OL may have a shape of a continuous layer formed across the plurality of emission areas LA1, LA2, and LA3 and the non-emission area NLA A more detailed description of the emission layer OL will be provided later.

[0134] like Figure 4 and Fig.11As shown in FIG. 1 , the cathode electrode CE may be located on the emission layer OL. A portion of the cathode electrode CE may be further located in the non-display area NDA, as shown in FIG. Fig.11 The cathode electrode CE may be electrically connected to and in contact with the connection electrode CNE in the non-display area NDA. The driving voltage (eg, ELVSS voltage) supplied to the power supply line VSL may be transmitted to the cathode electrode CE via the connection electrode CNE.

[0135] In some embodiments, the cathode electrode CE may have a transflective property or a transmissive property. When the cathode electrode CE has a transflective property, the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, a compound or mixture thereof, such as a mixture of Ag and Mg, or a multilayer structured material such as LiF / Ca or LiF / Al. In addition, when the thickness of the cathode electrode CE is tens to hundreds of angstroms, the cathode electrode CE may have a semi-transmissive and semi-reflective property.

[0136] When the cathode electrode CE has a transmissive characteristic, the cathode electrode CE may include a transparent conductive oxide (TCO). For example, the cathode electrode CE may include tungsten oxide (W x O x ), titanium oxide (TiO x , for example, TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0137] The first anode electrode AE1, the emission layer OL and the cathode electrode CE may constitute a first light emitting element ED1, the second anode electrode AE2, the emission layer OL and the cathode electrode CE may constitute a second light emitting element ED2, and the third anode electrode AE3, the emission layer OL and the cathode electrode CE may constitute a third light emitting element ED3. Each of the first light emitting element ED1, the second light emitting element ED2 and the third light emitting element ED3 may emit emission light LE.

[0138] like Figure 5 As shown in , the emission light LE finally emitted from the emission layer OL may be a mixed light in which the first component LE1 and the second component LE2 are mixed with each other. The peak wavelength of each of the first component LE1 and the second component LE2 of the emission light LE may be greater than 440nm and less than 480nm. That is, the emission light LE may be blue light.

[0139] In some embodiments, the emission layer OL may have a structure in which a plurality of emission layers are arranged to overlap each other, such as a series structure. For example, the emission layer OL may include: a first stack ST1 including a first emission layer EML1, a second stack ST2 located on the first stack ST1 and including a second emission layer EML2, a third stack ST3 located on the second stack ST2 and including a third emission layer EML3, a first charge generation layer CGL1 located between the first stack ST1 and the second stack ST2, and a second charge generation layer CGL2 located between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 may be arranged to overlap each other.

[0140] The first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may be disposed to overlap with each other.

[0141] In some embodiments, all of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit light of a third color, such as blue light. For example, each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may be a blue light emission layer and may include an organic material.

[0142] In some embodiments, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a first blue light having a first peak wavelength, and at least another one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength. For example, any one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a first blue light having a first peak wavelength, and the other of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a second blue light having a second peak wavelength. That is, the emission light LE finally emitted from the emission layer OL may be a mixed light in which the first component LE1 and the second component LE2 are mixed with each other, the first component LE1 may be the first blue light having the first peak wavelength, and the second component LE2 may be the second blue light having the second peak wavelength.

[0143] In some embodiments, the range of one of the first peak wavelength and the second peak wavelength may be above 440nm and below 460nm, and the range of the other of the first peak wavelength and the second peak wavelength may be above 460nm and below 480nm. However, the range of the first peak wavelength and the range of the second peak wavelength are not limited thereto. For example, both the range of the first peak wavelength and the range of the second peak wavelength may include 460nm. In some embodiments, any one of the first blue light and the second blue light may be dark blue light, and the other of the first blue light and the second blue light may be sky blue light.

[0144] According to some embodiments, the emission light LE emitted from the emission layer OL is blue light and includes a long wavelength component and a short wavelength component. Therefore, finally, the emission layer OL can emit blue light having a wider emission peak as the emission light LE. Therefore, compared with a conventional light-emitting element that emits blue light having a sharp emission peak, there is an advantage that color visibility at a side viewing angle can be improved.

[0145] In some embodiments, each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include a host and a dopant. The host is not particularly limited as long as it is a commonly used material, but may be, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-n-vinylcarbazole) (PVK), 9,10-di(naphthalene-2-yl)anthracene (ADN), 4,4',4"-tri(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tri(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN), distyryl-arylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), and the like.

[0146] Each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 that emit blue light may include, for example, a fluorescent material, the fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyryl-benzene (DSB), distyryl-arylene (DSA), a polymer based on polyfluorene (PFO), and a polymer based on polyparaphenylene. As another example, each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include a phosphorescent material including an organic metal complex, such as (4,6-F2ppy)2Irpic.

[0147] As described above, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 emits blue light of a wavelength band different from that of at least another of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3. In order to emit blue light of different wavelength bands, the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include the same material, and a method of adjusting the resonance distance may be used. Alternatively, in order to emit blue light of different wavelength bands, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 and at least another of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may include different materials.

[0148] However, the present disclosure is not limited thereto, and blue light emitted from each of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may have a peak wavelength of 440nm to 480nm, and the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may be made of the same material.

[0149] Alternatively, in yet another embodiment, at least one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a first blue light having the above-mentioned first peak wavelength, another of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength, and the remaining one of the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3 may emit a third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In some other embodiments, the range of any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be greater than 440nm and less than 460nm. The range of another of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be greater than 460nm and less than 470nm, and the range of the remaining one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be greater than 470nm and less than 480nm.

[0150] According to some other embodiments, the emission light LE emitted from the emission layer OL is blue light and includes a long wavelength component, an intermediate wavelength component, and a short wavelength component. Therefore, in the end, the emission layer OL can emit blue light with a wider emission peak as the emission light LE, and can improve color visibility at a side viewing angle.

[0151] According to the above-described embodiment, there are advantages in that the light emitting efficiency is improved and the life of the display device 1 is improved compared to a conventional light emitting element that does not adopt a tandem structure (ie, a structure in which a plurality of emission layers are stacked).

[0152] The first charge generation layer CGL1 may be located between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may be used to inject charges into each of the emission layers EML1 and EML2. The first charge generation layer CGL1 may be used to adjust the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be disposed on the n-type charge generation layer CGL11 and may be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0153] In the first charge generation layer CGL1, the n-type charge generation layer CGL11 and the p-type charge generation layer CGL12 may have a junction structure. The n-type charge generation layer CGL11 is closer to the anode electrodes AE1 and AE2 (see Figure 4 ) and AE3 (see Figure 4 ) and the anode electrodes AE1, AE2 (see Figure 4 ) and AE3 (see Figure 4 ) is set. The p-type charge generation layer CGL12 is closer to the anode electrodes AE1 and AE2 (see Figure 4 ) and AE3 (see Figure 4 ) and the cathode electrode CE among the cathode electrodes CE. The n-type charge generation layer CGL11 is close to the anode electrodes AE1 and AE2 (see Figure 4 ) and AE3 (see Figure 4 ) provides electrons to the first emission layer EML1, and the p-type charge generation layer CGL12 provides holes to the second emission layer EML2 included in the second stack ST2. The first charge generation layer CGL1 may be disposed between the first stack ST1 and the second stack ST2 to provide charges to the corresponding emission layer, thereby improving light emission efficiency and reducing driving voltage.

[0154] The first stack ST1 may be located between the first anode electrode AE1 and the second anode electrode AE2 (see Figure 4 ) and the third anode electrode AE3 (see Figure 4 ), and may further include a first hole transport layer HTL1, a first electron blocking layer BIL1, and a first electron transport layer ETL1.

[0155] The first hole transport layer HTL1 may be located at the first anode electrode AE1, the second anode electrode AE2 (see Figure 4 ) and the third anode electrode AE3 (see Figure 4) on. The first hole transport layer HTL1 can be used to smoothly transport holes and may include a hole transport material. The hole transport material may include carbazole-based derivatives (e.g., N-phenylcarbazole and polyvinylcarbazole), fluorene-based derivatives, triphenylamine-based derivatives (e.g., N,N'-bis(3-methylphenyl)-N,N'-diphenyl--4,4'-diamine (TPD), 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), 4,4'-cyclohexylenebis(TAPC)), etc., but is not limited thereto. In some embodiments, the first hole transport layer HTL1 may be formed as a single layer. Alternatively, in some embodiments, the first hole transport layer HTL1 may be formed as a plurality of layers. When the first hole transport layer HTL1 is formed as a plurality of layers, each layer may include a different material.

[0156] The first electron blocking layer BIL1 may be located on the first hole transport layer HTL1 and may be located between the first hole transport layer HTL1 and the first emission layer EML1. The first electron blocking layer BIL1 may include a hole transport material and a metal or a metal compound to prevent electrons generated in the first emission layer EML1 from flowing into the first hole transport layer HTL1. In some embodiments, each of the above-mentioned first hole transport layer HTL1 and the first electron blocking layer BIL1 may be formed as a single layer in which respective materials are mixed with each other. However, the present disclosure is not limited thereto. In some other embodiments, the first electron blocking layer BIL1 may be omitted.

[0157] The first electron transport layer ETL1 may be located on the first emission layer EML1 and may be located between the first charge generation layer CGL1 and the first emission layer EML1. In some embodiments, the first electron transport layer ETL1 may include an electron transport material, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole. (TAZ), 4-(naphthalene-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinoline)-(1,1'-biphenyl-4-ol)aluminum (BAlq), beryllium(benzoquinolin-10-ol) (BeBq2), 9,10-di(naphthalene-2-yl)anthracene (ADN) and mixtures thereof. However, the present disclosure is not limited to the types of the above-mentioned electron transport materials. In some embodiments, the first electron transport layer ETL1 may be formed as a single layer. Alternatively, in some embodiments, the first electron transport layer ETL1 may be formed as a plurality of layers. When the first electron transport layer ETL1 is formed as a plurality of layers, each layer may include different materials. The second stack ST2 may be positioned on the first charge generation layer CGL1 , and may further include a second hole transport layer HTL2 , a second electron blocking layer BIL2 , and a second electron transport layer ETL2 .

[0158] The second hole transport layer HTL2 may be located on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer HTL1. The second hole transport layer HTL2 may be formed as a single layer or as a plurality of layers. When the second hole transport layer HTL2 is formed as a plurality of layers, each layer may include different materials.

[0159] The second electron blocking layer BIL2 may be located on the second hole transport layer HTL2 and may be located between the second hole transport layer HTL2 and the second emission layer EML2. The second electron blocking layer BIL2 may be made of the same material as the first electron blocking layer BIL1 and may have the same structure as the first electron blocking layer BIL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron blocking layer BIL1. In some other embodiments, the second electron blocking layer BIL2 may be omitted.

[0160] The second electron transport layer ETL2 may be located on the second emission layer EML2, and may be located between the second charge generation layer CGL2 and the second emission layer EML2. The second electron transport layer ETL2 may be made of the same material as the first electron transport layer ETL1, and may have the same structure as the first electron transport layer ETL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer ETL1. The second electron transport layer ETL2 may be formed as a single layer or as a plurality of layers. When the second electron transport layer ETL2 is formed as a plurality of layers, each layer may include different materials.

[0161] The second charge generation layer CGL2 may be located on the second stack ST2, and may be located between the second stack ST2 and the third stack ST3.

[0162] The second charge generation layer CGL2 may have the same structure as the first charge generation layer CGL1 described above. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 disposed closer to the second stack ST2 and a p-type charge generation layer CGL22 disposed closer to the cathode electrode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0163] The second charge generation layer CGL2 may have a structure in which an n-type charge generation layer CGL21 and a p-type charge generation layer CGL22 contact each other. The first charge generation layer CGL1 and the second charge generation layer CGL2 may be made of different materials or made of the same material.

[0164] The third stack ST3 may be positioned on the second charge generation layer CGL2 , and may further include a third hole transport layer HTL3 and a third electron transport layer ETL3 .

[0165] The third hole transport layer HTL3 may be located on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from the materials exemplified as the materials included in the first hole transport layer HTL1. The third hole transport layer HTL3 may be formed as a single layer or as a plurality of layers. When the third hole transport layer HTL3 is formed as a plurality of layers, each layer may include different materials.

[0166] The third electron transport layer ETL3 may be located on the third emission layer EML3, and may be located between the cathode electrode CE and the third emission layer EML3. The third electron transport layer ETL3 may be made of the same material as the first electron transport layer ETL1, and may have the same structure as the first electron transport layer ETL1, or may include one or more materials selected from the materials exemplified as the materials included in the first electron transport layer ETL1. The third electron transport layer ETL3 may be formed as a single layer or as a plurality of layers. When the third electron transport layer ETL3 is formed as a plurality of layers, each layer may include different materials.

[0167] Although not shown in the drawings, a hole injection layer (HIL) may be further disposed between the first stack ST1 and the first anode electrode AE1 and the second anode electrode AE2 (see FIG. Figure 4 ) and the third anode electrode AE3 (see Figure 4 ), between the second stack ST2 and the first charge generation layer CGL1, or between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer can be used to inject holes more smoothly into the first emission layer EML1, the second emission layer EML2, and the third emission layer EML3. In some embodiments, the hole injection layer may be made of one or more selected from the group consisting of: copper phthalocyanine (CuPc), poly (3,4) -ethylenedioxythiophene (PEDOT), polyaniline (PANI), and N, N-dinaphthyl-N, N'-diphenylbenzidine (NPD), but is not limited thereto. In some embodiments, the hole injection layer may also be located between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2 (see Figure 4 ) and the third anode electrode AE3 (see Figure 4 ), between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2.

[0168] Although not shown in the drawings, an electron injection layer (EIL) may be further located between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, or between the first charge generation layer CGL1 and the first stack ST1. The electron injection layer may be used to smoothly inject electrons, and may be made of, but not limited to, tris(8-hydroxyquinoline)aluminum (Alq3), PBD, TAZ, spiro-PBD, BAlq, or SAlq. In addition, the electron injection layer may include a metal halide compound, for example, one or more selected from the group consisting of: MgF 2 , LiF, NaF, KF, RbF, CsF, FRF, LiI, NaI, KI, RbI, CsI, FRi and CaF 2, but not limited thereto. In addition, the electron injection layer may include a lanthanum-based material, such as Yb, Sm, or Eu. Alternatively, the electron injection layer may include both a metal halide material and a lanthanum-based material, such as Rb1:Yb or KI:Yb. When the electron injection layer includes both a metal halide material and a lanthanum-based material, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanum-based material. In some embodiments, the electron injection layer may also be located between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1.

[0169] In addition to the above-described structure, the structure of the emission layer OL may be modified. For example, the emission layer OL may include only two stacked layers, or may include four or more stacked layers.

[0170] like Fig.11 As shown in FIG. 1 , the first dam member IDM and the first supporting member IS may be located on the second insulating layer 117 in the non-display area NDA.

[0171] The first dam member IDM may be relatively located outside the power supply line VSL. Fig.11 As shown in FIG. 1 , the power supply line VSL may be located between the first dam member IDM and the display area DA.

[0172] In some embodiments, a portion of the first dam member IDM may overlap with the power supply line VSL.

[0173] In some embodiments, the first dam member IDM may include a plurality of dams. For example, the first dam member IDM may include a first dam D1, a second dam D2, and a third dam D3.

[0174] The first dam D1 may partially overlap the power supply line VSL and may be spaced apart from the third insulating layer 130 with the power supply line VSL interposed therebetween. In some embodiments, the first dam D1 may include a first lower dam pattern D11 on the second insulating layer 117 and a first upper dam pattern D12 on the first lower dam pattern D11.

[0175] The second dam D2 may be located outside the first dam D1 and may be spaced apart from the first dam D1. In some embodiments, the second dam D2 may include a second lower dam pattern D21 located on the second insulating layer 117 and a second upper dam pattern D22 located on the second lower dam pattern D21.

[0176] The third dam D3 may be located outside the second dam D2 and may be spaced apart from the second dam D2. In some embodiments, the third dam D3 may include a third lower dam pattern D31 located on the second insulating layer 117 and a third upper dam pattern D32 located on the third lower dam pattern D31.

[0177] In some embodiments, the first lower dam pattern D11 , the second lower dam pattern D21 , and the third lower dam pattern D31 may be made of the same material as the third insulating layer 130 , and may be formed simultaneously with the third insulating layer 130 .

[0178] In some embodiments, the first upper dam pattern D12 , the second upper dam pattern D22 , and the third upper dam pattern D32 may be made of the same material as the pixel defining layer 150 , and may be formed simultaneously with the pixel defining layer 150 .

[0179] In some embodiments, the heights of the first dam D1, the second dam D2, and the third dam D3 may be different from each other. For example, the height of the second dam D2 may be greater than the height of the first dam D1, and the height of the third dam D3 may be greater than the height of the second dam D2. That is, as the distance from the display area DA increases, the height of the dam included in the first dam member IDM may gradually increase, and thus, in the process of forming the first organic layer 173 included in the first encapsulation layer 170 to be described later, the overflow of the organic material may be more effectively blocked.

[0180] The first supporting member IS may be relatively located outside the first dam member IDM. Fig.10 and Fig.11 As shown in , the first dam member IDM may be located between the first supporting member IS and the display area DA. The first supporting member IS may be used to support a mask in a process of manufacturing the first encapsulation layer 170.

[0181] In some embodiments, the first supporting member IS may be made of the same material as the third insulating layer 130, and may be formed together with the third insulating layer 130 in the process of manufacturing the third insulating layer 130. Alternatively, the first supporting member IS may be made of the same material as the pixel defining layer 150, and may be formed together with the pixel defining layer 150 in the process of manufacturing the pixel defining layer 150.

[0182] like Figure 4 and Fig.11As shown in , the first encapsulation layer 170 may be disposed on the cathode electrode CE. The first encapsulation layer 170 protects the components (e.g., light emitting elements ED1, ED2, and ED3) located below the first encapsulation layer 170 from external foreign matter (e.g., moisture). The first encapsulation layer 170 is commonly disposed in the first emission area LA1, the second emission area LA2, the third emission area LA3, and the non-emission area NLA. In some embodiments, the first encapsulation layer 170 may directly cover the cathode electrode CE. In some embodiments, a covering layer (not shown in the figure) covering the cathode electrode CE may be further disposed between the first encapsulation layer 170 and the cathode electrode CE. In this case, the first encapsulation layer 170 may directly cover the covering layer. The first encapsulation layer 170 may be a thin film encapsulation layer.

[0183] In some embodiments, the first encapsulation layer 170 may include a first lower inorganic layer 171 , a first organic layer 173 , and a first upper inorganic layer 175 sequentially stacked on the cathode electrode CE.

[0184] In some embodiments, the first lower inorganic layer 171 may cover the first, second, and third light emitting elements ED1, ED2, and ED3 in the display area DA, and may cover the first dam member IDM in the non-display area NDA.

[0185] In some embodiments, the end portion 171 e of the first lower inorganic layer 171 may be located in the non-display area NDA, and may be located between the first dam member IDM and the first supporting member IS.

[0186] The first organic layer 173 may be located on the first lower inorganic layer 171. The first organic layer 173 may cover the first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3 in the display area DA. In some embodiments, a portion of the first organic layer 173 may be located in the non-display area NDA, but may not be located outside the first dam member IDM. Fig.11 It has been illustrated that a portion of the first organic layer 173 is accommodated in the space between the first dam D1 and the second dam D2, but the present disclosure is not limited thereto. Although not shown in the drawings, a portion of the first organic layer 173 may also be located between the second dam D2 and the third dam D3.

[0187] The first upper inorganic layer 175 may be located on the first organic layer 173. The first upper inorganic layer 175 may cover the first organic layer 173. In some embodiments, the first upper inorganic layer 175 may be in direct contact with the first lower inorganic layer 171 in the non-display area NDA to form an inorganic-inorganic junction, and an end 175e of the first upper inorganic layer 175 may be located between the first dam member IDM and the first supporting member IS. In some embodiments, the end 175e of the first upper inorganic layer 175 and the end 171e of the first lower inorganic layer 171 may be substantially aligned with each other.

[0188] In some embodiments, each of the first lower inorganic layer 171 and the first upper inorganic layer 175 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, or the like.

[0189] In some embodiments, each of the first lower inorganic layer 171 and the first upper inorganic layer 175 may be formed as a single layer, but is not limited thereto. At least one of the first lower inorganic layer 171 and the first upper inorganic layer 175 may have a structure in which a plurality of layers each made of an inorganic material are stacked, for example, a multilayer structure.

[0190] In some embodiments, the first organic layer 173 may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl-based resin, epoxy-based resin, urethane-based resin, cellulose-based resin, perylene-based resin, or the like.

[0191] However, the structure of the first encapsulation layer 170 is not limited to the above example, and the stack structure of the first encapsulation layer 170 may be variously modified.

[0192] The first cover layer 181 may be located on the first encapsulation layer 170. The first cover layer 181 may seal the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 together with the second cover layer 183 to be described later. In some embodiments, the first cover layer 181 may be disposed not only in the display area DA but also in the non-display area NDA, and may cover the first dam member IDM and the first support member IS in the non-display area NDA. In addition, the first cover layer 181 may cover a portion of the connection pad PD in the non-display area NDA.

[0193] In some embodiments, the first capping layer 181 may include an inorganic material. For example, the first capping layer 181 may include an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0194] The bank pattern 310 may be located on the first cover layer 181. In some embodiments, the bank pattern 310 may be located in the non-emission area NLA in the display area DA, and may surround the first emission area LA1, the second emission area LA2, and the third emission area LA3 in a plan view. Figure 6 The embankment pattern 310 may separate the space in which the first wavelength conversion pattern 340, the second wavelength conversion pattern 350 and the light-transmitting pattern 330 are disposed. In addition, the embankment pattern 310 may also be located in the non-display area NDA, as shown in FIG. Fig.11 In some embodiments, the first supporting member IS may also function as a dam to prevent the bank pattern 310 from overflowing, and a portion of the bank pattern 310 may be located in a space between the first dam member IDM and the first supporting member IS.

[0195] In some embodiments, the bank pattern 310 may be formed as follows. Figure 6 In another embodiment, the portion of the dam pattern 310 surrounding the first emission area LA1, the portion of the dam pattern 310 surrounding the second emission area LA2, and the portion of the dam pattern 310 surrounding the third emission area LA3 may be formed as separate patterns separated from each other.

[0196] When the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 are formed by a method of discharging an ink composition (ie, an inkjet printing method), the bank pattern 310 may be used as a guide to stably position the discharged ink composition at a desired position. That is, the bank pattern 310 may be used as a partition wall.

[0197] In some embodiments, the bank pattern 310 may include an organic material having a photocurability.

[0198] In some embodiments, the dam pattern 310 may include an organic material having a light blocking property. When the dam pattern 310 has the light blocking property, the dam pattern 310 may prevent light from penetrating between emission areas adjacent to each other in the display area DA. For example, the dam pattern 310 may prevent emission light LE emitted from the second light emitting element ED2 from being incident on the first wavelength conversion pattern 340 overlapping the first emission area LA1. In addition, the dam pattern 310 may block or prevent external light from penetrating into components located below the dam pattern 310 in the non-display area NDA.

[0199] The first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located on the first cover layer 181. In some embodiments, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located in the display area DA.

[0200] The light-transmitting pattern 330 may be located on the first cover layer 181, may be located in a space partitioned by the bank pattern 310, and may overlap the third emission area LA3 or the third light emitting element ED3.

[0201] In some embodiments, the light-transmitting pattern 330 may be formed as an island-shaped pattern, such as Figure 7 In some embodiments, a portion of the light-transmitting pattern 330 may overlap with the non-emission area NLA.

[0202] The light-transmitting pattern 330 may transmit incident light. As described above, the emission light LE provided from the third light-emitting element ED3 may be blue light. The emission light LE as blue light is transmitted through the light-transmitting pattern 330 and the third color filter 235, and then emitted to the outside of the display device 1. That is, the third light L3 emitted from the third emission area LA3 to the outside of the display device 1 may be blue light.

[0203] In some embodiments, the light-transmitting pattern 330 may include a first base resin 331 , and may further include a first scatterer 333 dispersed in the first base resin 331 .

[0204] The first base resin 331 may be made of a material having high light transmittance. In some embodiments, the first base resin 331 may be made of an organic material. For example, the first base resin 331 may include an organic material such as an epoxy-based resin, an acrylic resin, a carbon-based resin, or an imide-based resin.

[0205] The first scatterer 333 may have a different refractive index from the first base resin 331, and may form an optical interface with the first base resin 331. For example, the first scatterer 333 may be light scattering particles. The first scatterer 333 is not particularly limited as long as it is a material capable of scattering at least a portion of the transmitted light, but may be, for example, metal oxide particles or organic particles. Examples of metal oxides of the metal oxide particles may include titanium oxide (e.g., TiO 2 ), zirconium oxide (e.g., ZrO 2 ), aluminum oxide (e.g., Al 2 O 3 ), indium oxide (e.g., In 2 O 3 ), zinc oxide (e.g., ZnO), tin oxide (e.g., SnO 2 ), etc., and examples of the material of the organic particles may include acrylic resin, urethane-based resin, etc. Regardless of the incident direction of the incident light, the first scatterer 333 may scatter the light in random directions without substantially converting the wavelength of the light transmitted through the light-transmitting pattern 330.

[0206] In some embodiments, the light-transmitting pattern 330 may be in direct contact with the first capping layer 181 and the bank pattern 310 .

[0207] The first wavelength conversion pattern 340 may be located on the first cover layer 181 , may be located in a space partitioned by the bank pattern 310 , and may overlap the first emission region LA1 or the first light emitting element ED1 .

[0208] In some embodiments, the first wavelength conversion pattern 340 may be formed in the form of an island pattern, such as Figure 7 In some embodiments, a portion of the first wavelength conversion pattern 340 may overlap the non-emission area NLA.

[0209] The first wavelength conversion pattern 340 may convert or shift the peak wavelength of the incident light into light having another specific peak wavelength, and emit light having another specific peak wavelength. In some embodiments, the first wavelength conversion pattern 340 may convert the emission light LE provided from the first light emitting element ED1 into red light having a peak wavelength in the range of 610nm to 650nm, and emit red light. A more detailed description of the emission spectrum and the light absorption spectrum of the first wavelength conversion pattern 340 will be provided later.

[0210] In some embodiments, the first wavelength conversion pattern 340 may include a second base resin 341 and a first wavelength shifter 345 dispersed in the second base resin 341 , and may further include a second scatterer 343 dispersed in the second base resin 341 .

[0211] The second base resin 341 may be made of a material having high light transmittance. In some embodiments, the second base resin 341 may be made of an organic material. In some embodiments, the second base resin 341 may be made of the same material as the first base resin 331, or may include at least one of the materials exemplified as the material of the first base resin 331.

[0212] The first wavelength shifter 345 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In some embodiments, the first wavelength shifter 345 may convert the emission light LE of the third color, which is the blue light provided from the first light emitting element ED1, into red light having a single peak wavelength in the range of 610 nm to 650 nm and emit the red light.

[0213] Examples of the first wavelength shifter 345 may include quantum dots, quantum rods, phosphors, etc. For example, quantum dots may be particulate matter that emits light of a specific color during the process of electrons transitioning from a conduction band to a valence band.

[0214] The quantum dot may be a semiconductor nanocrystal material. The quantum dot may have a specific band gap to absorb light according to the composition and size of the quantum dot, and then emit light with a unique wavelength. Examples of semiconductor nanocrystals of quantum dots may include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, or a combination thereof.

[0215] The II-VI compound may be selected from the group consisting of a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; a ternary compound selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS , CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and a quaternary compound selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0216] The III-V compounds may be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0217] The IV-VI compound may be selected from the group consisting of: a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0218] In this case, the binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle in a partially different concentration distribution state. In addition, the quantum dot may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0219] In some embodiments, the quantum dot may have a core-shell structure including a core containing the above-mentioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may be used as a passivation layer for maintaining semiconductor properties by preventing chemical modification of the core, and / or as a charge layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient, wherein the concentration of the element present in the shell decreases toward the center. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, combinations thereof, and the like.

[0220] Examples of metal or non-metal oxides may include: binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 or NiO; or ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O4 or CoMn 2 O 4 , but the present disclosure is not limited thereto.

[0221] In addition, examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present disclosure is not limited thereto.

[0222] The light emitted by the first wavelength shifter 345 may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and thus, the color purity and color reproducibility of the color displayed by the display device 1 may be further improved. In addition, the light emitted by the first wavelength shifter 345 may be emitted in several directions regardless of the incident direction of the incident light. Therefore, the side visibility of the first color displayed in the first emission area LA1 may be improved.

[0223] A portion of the emission light LE provided from the first light emitting element ED1 may be transmitted through the first wavelength conversion pattern 340 without being converted into red light by the first wavelength shifter 345, and then be emitted. The component of the emission light LE that is incident on the first color filter 231 without being converted by the first wavelength conversion pattern 340 may be blocked by the first color filter 231. On the other hand, the red light converted by the first wavelength conversion pattern 340 among the emission light LE is transmitted through the first color filter 231, and then emitted to the outside. That is, the first light L1 emitted from the first emission area LA1 to the outside may be red light.

[0224] The second scatterer 343 may have a refractive index different from that of the second base resin 341, and may form an optical interface with the second base resin 341. For example, the second scatterer 343 may be light scattering particles. A detailed description of the second scatterer 343 other than the above description is substantially the same as or similar to that of the first scatterer 333, and thus will be omitted.

[0225] The second wavelength conversion pattern 350 may be located on the first cover layer 181, may be located in a space partitioned by the bank pattern 310, and may overlap the second emission area LA2 or the second light emitting element ED2.

[0226] In some embodiments, the second wavelength conversion pattern 350 may be formed in the form of an island pattern, such as Figure 7 In some embodiments, a portion of the second wavelength conversion pattern 350 may overlap the non-emission area NLA.

[0227] The second wavelength conversion pattern 350 may convert or shift the peak wavelength of the incident light into light having another specific peak wavelength and emit light having another specific peak wavelength. In some embodiments, the second wavelength conversion pattern 350 may convert the emission light LE provided from the second light emitting element ED2 into green light in the range of about 510 nm to about 550 nm and emit green light.

[0228] In some embodiments, the second wavelength conversion pattern 350 may include a third base resin 351 and a second wavelength shifter 355 dispersed in the third base resin 351 , and may further include a third scatterer 353 dispersed in the third base resin 351 .

[0229] The third base resin 351 may be made of a material having high light transmittance. In some embodiments, the third base resin 351 may be made of an organic material. In some embodiments, the third base resin 351 may be made of the same material as the first base resin 331, or may include, for example, at least one of the materials exemplified as the material of the first base resin 331.

[0230] The second wavelength shifter 355 can convert or shift the peak wavelength of the incident light to another specific peak wavelength. In some embodiments, the second wavelength shifter 355 can convert blue light with a peak wavelength in the range of 440nm to 480nm to green light with a peak wavelength in the range of 510nm to 550nm.

[0231] Examples of the second wavelength shifter 355 may include quantum dots, quantum rods, phosphors, etc. A more detailed description of the second wavelength shifter 355 is substantially the same as or similar to those described above in the description of the first wavelength shifter 345 , and thus will be omitted.

[0232] In some embodiments, both the first wavelength shifter 345 and the second wavelength shifter 355 may be composed of quantum dots. In this case, the particle size of the quantum dots constituting the second wavelength shifter 355 may be smaller than the particle size of the quantum dots constituting the first wavelength shifter 345.

[0233] The third scatterer 353 may have a refractive index different from that of the third base resin 351, and may form an optical interface with the third base resin 351. For example, the third scatterer 353 may be light scattering particles. The detailed description of the third scatterer 353 other than the above description is substantially the same as or similar to the description of the second scatterer 343, and thus will be omitted.

[0234] The emission light LE emitted from the second light emitting element ED2 may be provided to the second wavelength conversion pattern 350, and the second wavelength shifter 355 may convert the emission light LE provided from the third light emitting element ED3 into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit green light.

[0235] A portion of the emission light LE as blue light may be transmitted through the second wavelength conversion pattern 350 without being converted into green light by the second wavelength shifter 355, and may be blocked by the second color filter 233. On the other hand, green light converted by the second wavelength conversion pattern 350 among the emission light LE is transmitted through the second color filter 233 and then emitted to the outside. Therefore, the second light L2 emitted from the second emission area LA2 to the outside of the display device 1 may be green light.

[0236] The second covering layer 183 may be located on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The second covering layer 183 may cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The second covering layer 183 may also be located in the non-display area NDA. In the non-display area NDA, the second covering layer 183 may contact the first covering layer 181, and may seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Therefore, the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350 may be prevented from being damaged or contaminated due to penetration of foreign matter such as moisture or air from the outside. In some embodiments, the second covering layer 183 may be made of an inorganic material.

[0237] In some embodiments, the second cover layer 183 may be made of the same material as the first cover layer 181, or may include at least one of the materials mentioned in the description of the first cover layer 181. When both the first cover layer 181 and the second cover layer 183 are made of an inorganic material, a portion where the first cover layer 181 and the second cover layer 183 directly contact each other may form an inorganic-inorganic junction, and may effectively prevent moisture, air, etc. from being introduced from the outside.

[0238] In some embodiments, the first cover layer 181 and the second cover layer 183 may directly contact each other in the non-display area NDA.

[0239] In some embodiments, the second cover layer 183 may cover a portion of the connection pad PD, and an opening OPN exposing a portion of the connection pad PD may be defined in the first cover layer 181 and the second cover layer 183. A portion of the connection pad PD exposed by the opening OPN may be electrically connected to a terminal of the above-mentioned flexible circuit board FPC.

[0240] In some embodiments, in a process of manufacturing a display device to be described later, the opening OPN may be formed after forming the overcoat layer 190. That is, in the process of manufacturing the display device, the connection pad PD may be covered by the first cover layer 181 and the second cover layer 183, and portions of the first cover layer 181 and the second cover layer 183 covering the connection pad PD may be partially removed after forming the overcoat layer 190. That is, in the process of manufacturing the display device, the connection pad PD may be protected by the first cover layer 181 and the second cover layer 183, and therefore, damage to the connection pad PD that may occur in the process of manufacturing the display device may be prevented.

[0241] The overcoat layer 190 may be positioned on the second capping layer 183. The overcoat layer 190 may planarize upper portions of the light-transmitting patterns 330, the first wavelength conversion patterns 340, and the second wavelength conversion patterns 350.

[0242] In some embodiments, the overcoat layer 190 may include an organic material, which may be an organic material having photocurability.

[0243] In some embodiments, the refractive index of the overcoat layer 190 may be lower than the refractive index of the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350. For example, the refractive index of the overcoat layer 190 may be 1.1 or more and 1.3 or less, and the refractive index of the first wavelength conversion pattern 340 and the refractive index of the second wavelength conversion pattern 350 may be 0.3 or more greater than the refractive index of the overcoat layer 190. For example, the refractive index of the first wavelength conversion pattern 340 and the refractive index of the second wavelength conversion pattern 350 may be 1.7 to 1.9.

[0244] In some embodiments, the refractive index of the overcoat layer 190 may be lower than the refractive index of the light-transmitting pattern 330. In some embodiments, the refractive index of the light-transmitting pattern 330 may be greater than the refractive index of the overcoat layer 190 by 0.3 or more.

[0245] The overcoat layer 190 having a relatively low refractive index may reflect a portion of light emitted from the first and second wavelength conversion patterns 340 and 350 toward the first and second wavelength conversion patterns 340 and 350 in a direction toward the upper side of the display apparatus 1. That is, the overcoat layer 190 may recycle at least a portion of light that is transmitted through the first and second wavelength conversion patterns 340 and 350 and then incident thereon to increase the amount of light converted by the first and second wavelength conversion patterns 340 and 350, and as a result, the light efficiency of the display apparatus 1 may be improved.

[0246] In some embodiments, the overcoat layer 190 may be located only in the display area DA and may not be located in the non-display area NDA. However, the present disclosure is not limited thereto, and in another embodiment, a portion of the overcoat layer 190 may also be located in the non-display area NDA.

[0247] The first color filter 231 , the second color filter 233 , the third color filter 235 , and the color pattern 250 may be positioned on the overcoat layer 190 in the display area DA.

[0248] The first color filter 231 may be disposed to overlap the first emission area LA1, the second color filter 233 may be disposed to overlap the second emission area LA2, and the third color filter 235 may be disposed to overlap the third emission area LA3.

[0249] In some embodiments, the first color filter 231 may block or absorb light of a third color (e.g., blue light). That is, the first color filter 231 may be used as a blue light blocking filter that blocks blue light. In some embodiments, the first color filter 231 may selectively transmit light of a first color (e.g., red light) and block or absorb light of a third color (e.g., blue light) and light of a second color (e.g., green light). For example, the first color filter 231 may be a red color filter and may include a red colorant.

[0250] The second color filter 233 may block or absorb light of a third color (e.g., blue light). That is, the second color filter 233 may also be used as a blue light blocking filter. In some embodiments, the second color filter 233 may selectively transmit light of a second color (e.g., green light) and block or absorb light of a third color (e.g., blue light) and light of a first color (e.g., red light). For example, the second color filter 233 may be a green color filter and may include a green colorant.

[0251] like Figure 4 and Figure 8 As shown in , in some embodiments, a portion of the first color filter 231 may be further located within the non-emission area NLA, and a portion of the second color filter 233 may also be further located within the non-emission area NLA.

[0252] In some embodiments, portions of the first color filter 231 may be further located in a region between the first emission region LA1 and the second emission region LA2 and a region between the first emission region LA1 and the third emission region LA3 in the non-emission region NLA.

[0253] In some embodiments, portions of the second color filter 233 may be further located in a region between the first emission region LA1 and the second emission region LA2 and a region between the second emission region LA2 and the third emission region LA3 in the non-emission region NLA.

[0254] It has been shown in the drawings that the first color filter 231 and the second color filter 233 do not overlap with each other, but the first color filter 231 and the second color filter 233 may also overlap with each other in the non-emission area NLA in an area between the first emission area LA1 and the second emission area LA2. The portion where the first color filter 231 and the second color filter 233 overlap with each other in the non-emission area NLA may serve as a light blocking member that blocks transmission of light.

[0255] Alternatively, in another embodiment, unlike what is shown in the drawings, the first color filter 231 and the second color filter 233 may be located over the entire non-emission area NLA, and in an embodiment, the first color filter 231 and the second color filter 233 may overlap each other in the entire non-emission area NLA.

[0256] The third color filter 235 may selectively transmit light of a third color (e.g., blue light) and block or absorb light of a first color (e.g., red light) and light of a second color (e.g., green light). In some embodiments, the third color filter 235 may be a blue color filter and may include a blue colorant, such as a blue dye or a blue pigment.

[0257] The color pattern 250 may be disposed to overlap the non-emission area NLA in the display area DA. The color pattern 250 may also be located in the non-display area NDA and may be disposed to overlap the bank pattern 310 in the non-display area NDA.

[0258] The color pattern 250 may absorb a portion of light from outside the display device 1 into the display device 1 to reduce reflected light due to external light. The external light is largely reflected to cause distortion of the color gamut of the display device 1. However, according to the present embodiment, when the color pattern 250 is located in the non-emission area NLA and the non-display area NDA, color distortion due to reflection of external light may be reduced.

[0259] In some embodiments, the color pattern 250 may include a blue colorant, such as a blue dye or a blue pigment. In some embodiments, the color pattern 250 may be made of the same material as the third color filter 235, and may be formed simultaneously with the third color filter 235 in the process of forming the third color filter 235. When the color pattern 250 includes a blue colorant, the external light or reflected light transmitted through the color pattern 250 has a blue wavelength band. The color sensitivity of the user's eyes varies according to the color of the light. More specifically, the user may be less sensitive to the light of the blue wavelength band than the light of the green wavelength band and the light of the red wavelength band. Therefore, the color pattern 250 includes a blue colorant, and therefore, the user may be relatively less sensitive to the reflected light.

[0260] In some embodiments, the color pattern 250 may overlap the first color filter 231 and the second color filter 233 in the non-emission area NLA. For example, the color pattern 250 may overlap the first color filter 231 and the second color filter 233 in the non-emission area NLA in a region between the first emission area LA1 and the second emission area LA2. In addition, the color pattern 250 may overlap the second color filter 233 in a region between the second emission area LA2 and the third emission area LA3 in the non-emission area NLA. In addition, the color pattern 250 may overlap the first color filter 231 in a region between the third emission area LA3 and the first emission area LA1 in the non-emission area NLA.

[0261] The portion where the first color filter 231 and the color pattern 250 overlap each other and the portion where the second color filter 233 and the color pattern 250 overlap each other in the non-emission area NLA can be used as a light blocking member that blocks the transmission of light. The portion where the first color filter 231 and the color pattern 250 overlap each other and the portion where the second color filter 233 and the color pattern 250 overlap each other in the non-emission area NLA can reduce color distortion caused by reflection of external light by absorbing at least a portion of external light. In addition, these portions can prevent the light emitted to the outside from penetrating between adjacent emission areas to cause color mixing, and thus the color gamut of the display device 1 can be further improved.

[0262] In some embodiments, in the non-emission area NLA, the color pattern 250 may be located on the first and second color filters 231 and 233. That is, the color pattern 250 may be located relatively farther from the base member 110 than the first and second color filters 231 and 233.

[0263] The second dam member ODM may be located between the first cover layer 181 and the second cover layer 183 in the non-display area NDA.

[0264] The second dam member ODM may prevent an organic material from overflowing during the process of forming the second organic layer 273 included in the second encapsulation layer 270 .

[0265] The second dam member ODM may be relatively located outside the first dam member IDM. Fig.10 and Fig.11 As shown in FIG. 4 , the first dam member IDM may be located between the second dam member ODM and the display area DA.

[0266] In some embodiments, the second dam member ODM may be made of the same material as the bank pattern 310 , and may be formed simultaneously with the bank pattern 310 in the process of forming the bank pattern 310 .

[0267] The second supporting member OS may be located on the second cover layer 183 in the non-display area NDA. The second supporting member OS may support a mask used in forming the second encapsulation layer 270.

[0268] In some embodiments, the second supporting member OS may be relatively located outside the second dam member ODM. Fig.10 and Fig.11 As shown in , the second dam member ODM may be located between the second supporting member OS and the display area DA.

[0269] In some embodiments, the second supporting member OS may be made of the same material as the overcoat layer 190, and may be formed together with the overcoat layer 190 in the process of forming the overcoat layer 190. Alternatively, the second supporting member OS may include the same material as at least one of the first color filter 231, the second color filter 233, and the third color filter 235. For example, when the second supporting member OS includes the same material as the third color filter 235, the second supporting member OS may be formed together with the third color filter 235 in the process of forming the third color filter 235.

[0270] The second encapsulation layer 270 may be located on the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250. The second encapsulation layer 270 protects components located under the second encapsulation layer 270 from external foreign substances such as moisture.

[0271] The second encapsulation layer 270 is commonly disposed in the first emission area LA1, the second emission area LA2, the third emission area LA3, and the non-emission area NLA in the display area DA. In some embodiments, the second encapsulation layer 270 may directly cover the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 in the display area DA.

[0272] The second encapsulation layer 270 may cover the bank pattern 310 and the color pattern 250 in the non-display area NDA.

[0273] In some embodiments, the second encapsulation layer 270 may include a second lower inorganic layer 271 , a second organic layer 273 , and a second upper inorganic layer 275 , which are sequentially stacked.

[0274] In some embodiments, the second lower inorganic layer 271 may directly cover the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 in the display area DA, and may cover the dam pattern 310 and the color pattern 250 in the non-display area NDA.

[0275] In some embodiments, the end portion 271 e of the second lower inorganic layer 271 may be located in the non-display area NDA, and may be located between the second dam member ODM and the second supporting member OS.

[0276] The second organic layer 273 may be located on the second lower inorganic layer 271. The second organic layer 273 may be located over the entire display area DA, and a portion of the second organic layer 273 may be located in the non-display area NDA. In some embodiments, a portion of the second organic layer 273 may be located in the non-display area NDA, but may not be located outside the second dam member ODM. In some embodiments, a portion of the second organic layer 273 may be located in a space between the second dam member ODM and the first supporting member IS.

[0277] The second upper inorganic layer 275 may be located on the second organic layer 273. The second upper inorganic layer 275 may cover the second organic layer 273. In some embodiments, the second upper inorganic layer 275 may be in direct contact with the second lower inorganic layer 271 in the non-display area NDA to form an inorganic-inorganic junction, and an end 275e of the second upper inorganic layer 275 may be located between the second dam member ODM and the second supporting member OS. Both the end 275e of the second upper inorganic layer 275 and the end 275e of the second lower inorganic layer 271 may be located between the second dam member ODM and the second supporting member OS, and therefore, both the second upper inorganic layer 275 and the second lower inorganic layer 271 may not overlap with the connection pad PD.

[0278] In some embodiments, the end portion 275 e of the second upper inorganic layer 275 and the end portion 271 e of the second lower inorganic layer 271 may be substantially aligned with each other.

[0279] In some embodiments, the second lower inorganic layer 271 and the second upper inorganic layer 275 may be made of an inorganic insulating material. In some embodiments, the second lower inorganic layer 271 and the second upper inorganic layer 275 may be made of the same material as the first lower inorganic layer 171, or may include at least one of the materials exemplified as the material of the first lower inorganic layer 171.

[0280] The second organic layer 273 may be located between the second lower inorganic layer 271 and the second upper inorganic layer 275. The second organic layer 273 may be made of an organic insulating material. In some embodiments, the second organic layer 273 may be made of the same material as the first organic layer 173, or may include at least one of the materials exemplified as the material of the first organic layer 173.

[0281] Figure 12 to Figure 14 They are used to describe manufacturing Fig.11 A view of the process of the first encapsulation layer is shown in FIG.

[0282] Apart from Fig.11 In addition, reference Figure 12 to Figure 14 , first, if Fig.12 As shown in FIG. 1 , after forming the cathode electrode CE, a first mask MSK1 is disposed on the base part 110. The first mask MSK1 may be supported by the first support member IS and may include an opening area OP1 corresponding to a first encapsulation layer 170 (see FIG. 1 ) to be formed later. Fig.11 In some embodiments, in the first mask MSK1, one opening area OP1 may overlap the entire display area DA and a portion of the non-display area NDA. For example, the first mask MSK1 may be an opening mask.

[0283] Thereafter, when the first inorganic material mat1 for forming the first lower inorganic layer 171 is deposited on the base part 110, the first lower inorganic layer 171 may be formed. In a region other than the opening region OP1, the first inorganic material mat1 is masked by the first mask MSK1 and thus does not reach the base part 110. Therefore, an end portion 171e of the first lower inorganic layer 171 is located between the first supporting member IS and the first dam member IDM.

[0284] Afterwards, if Fig.13 As shown in FIG. 1 , an organic material is applied to the first lower inorganic layer 171 by an inkjet method or the like, and is photocured to form a first organic layer 173. In the process of forming the first organic layer 173, the organic material in a state before curing has fluidity. The movement of the organic material having fluidity can be blocked by the first dam member IDM, and therefore, the overflow of the organic material can be prevented.

[0285] At the same time, Fig.13 It has been shown that the first mask MSK1 is not provided, but this is only an example. The first organic layer 173 may also be Fig.12 The first mask MSK1 shown in FIG. 1 is formed in a state where it is disposed on the first supporting member IS.

[0286] Afterwards, if Fig.14 As shown in , when the first mask MSK1 is disposed on the first supporting member IS and the second inorganic material mat2 for forming the first upper inorganic layer 175 is deposited on the first organic layer 173 , the first upper inorganic layer 175 may be formed.

[0287] In the area other than the opening area OP1, the second inorganic material mat2 is masked by the first mask MSK1 and thus does not reach the base part 110. Therefore, the end 175e of the first upper inorganic layer 175 is located between the first supporting member IS and the first dam member IDM. In addition, the first lower inorganic layer 171 and the first upper inorganic layer 175 may be formed using the same first mask MSK1, and therefore, the end 171e of the first lower inorganic layer 171 and the end 175e of the first upper inorganic layer 175 may be substantially aligned with each other.

[0288] Figures 15 to 17 They are used to describe manufacturing Fig.11 A view of the process of the second encapsulation layer is shown in FIG.

[0289] Apart from Fig.11 In addition, refer to Figures 15 to 17 First, after forming the first color filter 231, the second color filter 233, the third color filter 235 and the color pattern 250, a second mask MSK2 is disposed on the base member 110, as shown in FIG. Fig.15 The second mask MSK2 may be supported by the second support member OS and may include an opening region OP2 corresponding to a region where the second encapsulation layer 270 (see FIG. Fig.11 ) area.

[0290] In some embodiments, the opening area OP2 of the second mask MSK2 may be wider than the opening area OP1 of the first mask MSK1.

[0291] In some embodiments, in the second mask MSK2, one open area OP2 may overlap the entire display area DA and overlap a portion of the non-display area NDA. For example, the second mask MSK2 may be an open mask.

[0292] Thereafter, when the third inorganic material mata1 for forming the second lower inorganic layer 271 is deposited on the base part 110, the second lower inorganic layer 271 may be formed. In the region other than the opening region OP2, the third inorganic material mata1 is masked by the second mask MSK2 and thus does not reach the base part 110. Therefore, the end portion 271e of the second lower inorganic layer 271 is located between the second supporting member OS and the second dam member ODM.

[0293] Afterwards, if Fig.16 As shown in FIG. 1 , an organic material is applied onto the second lower inorganic layer 271 by an inkjet method or the like, and is photocured to form a second organic layer 273. Movement of the organic material for forming the second organic layer 273 in a state before being cured may be blocked by the second dam member ODM, and thus overflow of the organic material may be prevented.

[0294] At the same time, Fig.16 It has been shown that the second mask MSK2 is not provided, but this is only an example. The second organic layer 273 may also be Fig.15 The second mask MSK2 shown in FIG. 1 is formed in a state where it is disposed on the second supporting member OS.

[0295] Afterwards, if Fig.17 As shown in , when the second mask MSK2 is disposed on the second supporting member OS and the fourth inorganic material mata2 for forming the second upper inorganic layer 275 is deposited on the second organic layer 273 , the second upper inorganic layer 275 may be formed.

[0296] A portion of the fourth inorganic material mata2 is masked by the second mask MSK2 during deposition and thus does not reach the base member 110. Therefore, an end 275e of the second upper inorganic layer 275 is located between the second supporting member OS and the second dam member ODM. In addition, the second lower inorganic layer 271 and the second upper inorganic layer 275 may be formed using the same second mask MSK2, and therefore, an end 271e of the second lower inorganic layer 271 and an end 275e of the second upper inorganic layer 275 may be substantially aligned with each other.

[0297] In the display device 1 according to the above-described embodiment, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, the light-transmitting pattern 330, the first color filter 231, the second color filter 233, and the third color filter 235 are sequentially located on the first encapsulation layer 170, and thus, misalignment between components can be prevented. In addition, the display device 1 does not include a separate substrate, and thus, the thickness of the display device 1 can be reduced. In addition, the distance between the light emitting element and the wavelength conversion pattern can be reduced, and thus, the light efficiency can be increased.

[0298] Furthermore, in the display apparatus 1, the first dam member IDM, the second dam member ODM, the first supporting member IS, and the second supporting member OS may be formed in the process of manufacturing components located in the display area DA, and thus, the corresponding components may be formed without adding a separate process.

[0299] Fig.18 It is shown Fig.11 sectional view of a modified example of the display device shown in FIG.

[0300] refer to Fig.18 The display device 1a according to this embodiment is different from the display device 1a according to Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second supporting member OSa and is different in other configurations from the embodiment according to FIG. Figures 4 to 11 The display device 1 of the embodiment shown in is substantially the same or similar. Therefore, the description of the overlapping contents will be omitted, and the contents different from the above contents will be mainly described.

[0301] The second supporting member OSa may include a lower supporting member OSa1 positioned on the second cover layer 183 and an upper supporting member OSa2 positioned on the lower supporting member OSa1 .

[0302] In some embodiments, the lower supporting member OSa1 may be made of the same material as the overcoat layer 190 and may be formed together with the overcoat layer 190 in the process of forming the overcoat layer 190. In addition, the upper supporting member OSa2 may be made of the same material as any one of the first color filter 231, the second color filter 233, and the third color filter 235 and may be formed together with any one of the first color filter 231, the second color filter 233, and the third color filter 235 in the process of manufacturing any one of the first color filter 231, the second color filter 233, and the third color filter 235.

[0303] Alternatively, the lower supporting member OSa1 may be made of the same material as any one of the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with any one of the first color filter 231, the second color filter 233, and the third color filter 235 in the process of manufacturing any one of the first color filter 231, the second color filter 233, and the third color filter 235. In addition, the upper supporting member OSa2 may be made of the same material as the other one of the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with the other one of the first color filter 231, the second color filter 233, and the third color filter 235 in the process of manufacturing the other one of the first color filter 231, the second color filter 233, and the third color filter 235. For example, when the color filters are formed in the order of the first color filter 231, the second color filter 233, and the third color filter 235, the lower supporting member OSa1 may be made of the same material as the first color filter 231 and may be formed simultaneously with the first color filter 231 in the process of manufacturing the first color filter 231. In addition, the upper supporting member OSa2 may be made of the same material as the third color filter 235 and may be formed together with the third color filter 235 in the process of manufacturing the third color filter 235.

[0304] Fig.19 It is shown Fig.11 2 is a cross-sectional view of another modified example of the display device shown in FIG.

[0305] refer to Fig.18 The display device 1b according to this embodiment is different from the display device 1b according to Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second supporting member OSb and is different in other configurations from the embodiment according to FIG. Figures 4 to 11 The display device 1 of the embodiment shown in is substantially the same or similar. Therefore, the description of the overlapping contents will be omitted, and the contents different from the above contents will be mainly described.

[0306] The second supporting member OSb may be located between the first and second covering layers 181 and 183. In some embodiments, the second supporting member OSb may be made of the same material as the bank pattern 310 and may be formed together with the bank pattern 310 during the process of forming the bank pattern 310, similar to the second dam member ODM.

[0307] Fig. 20 It is shown Fig.11 A sectional view of still another modified example of the display device shown in FIG.

[0308] refer to Fig. 20 The display device 1c according to this embodiment is different from the display device 1c according to Figures 4 to 11The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second supporting member OSc and is different in other configurations from the embodiment according to FIG. Figures 4 to 11 The display device 1 of the embodiment shown in is substantially the same or similar. Therefore, the description of the overlapping contents will be omitted, and the contents different from the above contents will be mainly described.

[0309] The second supporting member OSc may include a lower supporting member OSc1 located between the first cover layer 181 and the second cover layer 183 , and an upper supporting member OSc2 located on the second cover layer 183 and overlapping the lower supporting member OSc1 .

[0310] In some embodiments, the lower supporting member OSc1 may be made of the same material as the bank pattern 310 , and may be formed together with the bank pattern 310 in the process of forming the bank pattern 310 , similar to the second dam member ODM.

[0311] The upper supporting member OSc2 may include the same material as at least one of the overcoat layer 190, the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with at least one of the overcoat layer 190, the first color filter 231, the second color filter 233, and the third color filter 235 in the same manufacturing process.

[0312] Fig.21 It is shown Fig.11 A sectional view of still another modified example of the display device shown in FIG.

[0313] refer to Fig.21 The display device 1d according to this embodiment is different from the display device 1d according to Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second dam member ODMa and is different in other configurations from the embodiment according to FIG. Figures 4 to 11 The display device 1 of the embodiment shown in is substantially the same or similar. Therefore, the description of the overlapping contents will be omitted, and the contents different from the above contents will be mainly described.

[0314] The second dam member ODMa may include a lower dam pattern ODMa1 on the first capping layer 181 and an upper dam pattern ODMa2 on the lower dam pattern ODMa1. In some embodiments, the upper dam pattern ODMa2 may be indirectly or directly located over the lower dam pattern ODMa1.

[0315] In some embodiments, the lower dam pattern ODMa1 may be made of the same material as the bank pattern 310 , and may be formed simultaneously with the bank pattern 310 in the same process as the bank pattern 310 .

[0316] In some embodiments, the upper dam pattern ODMa2 may include the same material as at least one of the overcoat layer 190, the first color filter 231, the second color filter 233, and the third color filter 235, and may be formed together with at least one of the overcoat layer 190, the first color filter 231, the second color filter 233, and the third color filter 235 in the same manufacturing process.

[0317] Fig. 22 It is shown Fig.11 A sectional view of still another modified example of the display device shown in FIG.

[0318] refer to Fig. 22 The display device 1e according to this embodiment is different from the display device 1e according to Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second supporting member OSa and a second dam member ODMa and is the same as the display device 1 according to the embodiment shown in FIG. 1 in other configurations. Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is substantially the same as or similar to the display device 1 of the embodiment shown in FIG. 1 . A more detailed description of the second supporting member OSa is the same as that in FIG. Fig.18 The same as those described in the description of , and the more detailed description of the second dam member ODMa is the same as that described above in Fig.21 The same as those described in the description and will therefore be omitted.

[0319] Fig.23 It is shown Fig.11 A sectional view of still another modified example of the display device shown in FIG.

[0320] refer to Fig.23 The display device 1f according to this embodiment is different from the display device 1f according to Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second supporting member OSb and a second dam member ODMa and is the same as the display device 1 according to the embodiment shown in FIG. 1 in other configurations. Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is substantially the same as or similar to the display device 1 of the embodiment shown in FIG. 1 . A more detailed description of the second supporting member OSb is the same as that in FIG. Fig.19 The same as those described in the description of , and the more detailed description of the second dam member ODMa is the same as that described above in Fig.21 The same as those described in the description and will therefore be omitted.

[0321] Fig.24 It is shown Fig.11 A sectional view of still another modified example of the display device shown in FIG.

[0322] refer to Fig.24 The display device 1g according to this embodiment is different from the display device 1g according to Figures 4 to 11The display device 1 of the embodiment shown in FIG. 1 is different in that it includes a second supporting member OSc and a second dam member ODMa and is the same as the display device 1 according to the embodiment shown in FIG. 1 in other configurations. Figures 4 to 11 The display device 1 of the embodiment shown in FIG. 1 is substantially the same as or similar to the display device 1 of the embodiment shown in FIG. 1 . A more detailed description of the second supporting member OSc is the same as that in FIG. Fig. 20 The same as those described in the description of , and the more detailed description of the second dam member ODMa is the same as that described above in Fig.21 The same as those described in the description and will therefore be omitted.

[0323] Fig.25 is along Figure 2 A cross-sectional view of a display device according to another embodiment taken along line X1-X1', and Fig.26 is along Fig.10 A cross-sectional view of a display device according to another embodiment taken along line X3 - X3 ′.

[0324] refer to Fig.25 and Fig.26 The display device 2 according to this embodiment is different from the display device 2 according to Figures 4 to 11 The display device 1 of the embodiment of the present invention is different in that the first covering layer 181 is omitted (see Figure 4 and Fig.11 ), and the display device 2 includes a first encapsulation layer 170a, and in other configurations with Figures 4 to 11 The display devices 1 of the embodiments are substantially the same or similar. Therefore, descriptions of overlapping contents will be omitted.

[0325] The first encapsulation layer 170 a includes a first lower inorganic layer 171 , a first organic layer 173 on the first lower inorganic layer 171 , and a first upper inorganic layer 175 a on the first organic layer 173 .

[0326] The description of the first lower inorganic layer 171 and the first organic layer 173 is the same as above. Figures 4 to 11 The same as those described in the description of .

[0327] The first upper inorganic layer 175 a may be located over the display area DA and the non-display area NDA, may cover not only the first dam member IDM but also the first support member IS, and may also cover a portion of the connection pad PD.

[0328] In some embodiments, the first upper inorganic layer 175a may be located over the entire surface of the base part 110. Therefore, an end 175ae of the first upper inorganic layer 175a may be located at an edge side of the base part 110 and may be relatively located outside the second supporting member OS. In other words, the second supporting member OS may be located between the end 175ae of the first upper inorganic layer 175a and the display area DA.

[0329] An end 171e of the first lower inorganic layer 171 is located between the first supporting member IS and the first dam member IDM, and an end 175ae of the first upper inorganic layer 175a is located outside the second supporting member OS, and therefore, the end 171e of the first lower inorganic layer 171 and the end 175ae of the first upper inorganic layer 175a may not be aligned with each other.

[0330] All of the first wavelength conversion pattern 340 , the second wavelength conversion pattern 350 , the light-transmitting pattern 330 , the bank pattern 310 , and the second dam member ODM may be located between the first upper inorganic layer 175 a and the second capping layer 183 .

[0331] The first upper inorganic layer 175 a may directly contact the second capping layer 183 in the non-display area NDA to form an inorganic-inorganic junction, and thus may seal the first wavelength conversion pattern 340 , the second wavelength conversion pattern 350 , and the light-transmitting pattern 330 .

[0332] In some embodiments, an opening OPN exposing the connection pad PD may be defined in the first upper inorganic layer 175 a and the second capping layer 183 .

[0333] Fig. 27 It is shown Fig.26 sectional view of a modified example of the display device shown in FIG.

[0334] refer to Fig. 27 The display device 2a according to this embodiment is different from the display device 2a according to Fig.26 The display device 2 of the embodiment of the present invention is different in that it includes a second supporting member OSa and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second supporting member OSa is as described above in Fig.18 The embodiments are the same as those described in the embodiment and will therefore be omitted.

[0335] Fig.28 It is shown Fig.26 2 is a cross-sectional view of another modified example of the display device shown in FIG.

[0336] refer to Fig.28 The display device 2b according to this embodiment is different from the display device 2b according to Fig.26The display device 2 of the embodiment of the present invention is different in that it includes a second supporting member OSb and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second supporting member OSb is as described above in Fig.19 The details are the same or similar to those described in the embodiments and will therefore be omitted.

[0337] Fig.29 It is shown Fig.26 sectional view of a modified example of the display device shown in FIG.

[0338] refer to Fig.29 The display device 2c according to this embodiment is different from the display device 2c according to Fig.26 The display device 2 of the embodiment of the present invention is different in that it includes a second supporting member OSc and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second supporting member OSc is as described above in Fig. 20 The details are the same or similar to those described in the embodiments and will therefore be omitted.

[0339] Fig.30 It is shown Fig.26 A sectional view of still another modified example of the display device shown in FIG.

[0340] refer to Fig.30 The display device 2d according to this embodiment is different from the display device 2d according to Fig.26 The display device 2 of the embodiment of the present invention is different in that it includes a second dam member ODMa and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second dam member ODMa is as described above in Fig.21 The details are the same or similar to those described in the embodiments and will therefore be omitted.

[0341] Fig.31 It is shown Fig.26 A sectional view of still another modified example of the display device shown in FIG.

[0342] refer to Fig.31 The display device 2e according to this embodiment is different from the display device 2e according to Fig.26 The display device 2 of the embodiment of the present invention is different in that it includes a second dam member ODMa and a second supporting member OSa, and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second dam member ODMa is as described above in Fig.21The same or similar to those described in the embodiment of the present invention, and the more detailed description of the second supporting member OSa is the same as above in Fig.18 The details are the same or similar to those described in the embodiments and will therefore be omitted.

[0343] Fig.32 It is shown Fig.26 A sectional view of still another modified example of the display device shown in FIG.

[0344] refer to Fig.32 The display device 2f according to this embodiment is different from the display device 2f according to Fig.26 The display device 2 of the embodiment of the present invention is different in that it includes a second dam member ODMa and a second supporting member OSb, and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second dam member ODMa is as described above in Fig.21 The same or similar to those described in the embodiment of the present invention, and the more detailed description of the second supporting member OSb is the same as above in Fig.19 The details are the same or similar to those described in the embodiments and will therefore be omitted.

[0345] Fig.33 It is shown Fig.26 A sectional view of still another modified example of the display device shown in FIG.

[0346] refer to Fig.33 The display device 2g according to this embodiment is different from the display device 2g according to Fig.26 The display device 2 of the embodiment of the present invention is different in that it includes a second dam member ODMa and a second supporting member OSc, and is different from the display device 2 according to the embodiment of the present invention in other configurations. Fig.26 The display device 2 of the embodiment of the present invention is substantially the same as or similar to that of the embodiment of the present invention. A more detailed description of the second dam member ODMa is as described above in Fig.21 The same or similar to those described in the embodiment of the present invention, and the more detailed description of the second supporting member OSc is the same as above in Fig. 20 The details are the same or similar to those described in the embodiments and will therefore be omitted.

[0347] Meanwhile, although not shown in the drawings, in addition to the above-described embodiments, various modifications may be made to the structure of the display device. For example, the structure exemplified as the structure of the second supporting member may be used as the structure of the second dam member. For example, the second dam member may include the same material as the outer coating or the color filter.

[0348] The embodiments of the present disclosure have been described above with reference to the accompanying drawings, but those skilled in the art will appreciate that various modifications and changes may be made without departing from the technical spirit or basic features of the present disclosure. Therefore, it is to be understood that the above embodiments are illustrative rather than restrictive in all aspects.

Claims

1. A display device, comprising: a base component, in which a display area and a non-display area surrounding the display area are defined; a first dam member, a first supporting member, a second dam member, and a second supporting member, the first dam member, the first supporting member, the second dam member, and the second supporting member being located on the base component and in the non-display area; a light emitting element, located on the base component and in the display area; A first encapsulation layer, located on the light-emitting element; a wavelength conversion pattern, located on the first encapsulation layer and overlapping the light-emitting element; a color filter located on and overlapping the wavelength conversion pattern; as well as A second encapsulation layer is located on the color filter, Wherein, the first dam member is located between the first supporting member and the display area, The first supporting member is located between the second dam member and the first dam member, The second dam member is located between the second supporting member and the first supporting member, an end portion of the inorganic layer included in the first encapsulation layer is located between the first supporting member and the first dam member, and An end portion of the inorganic layer included in the second encapsulation layer is located between the second supporting member and the second dam member.

2. The display device according to claim 1, wherein: The first dam member is arranged to surround the display area, The first supporting member is arranged to surround the first dam member, the second dam member is disposed to surround the first supporting member, and The second supporting member is disposed to surround the second dam member.

3. The display device according to claim 2, wherein: The second encapsulation layer includes a lower inorganic layer on the color filter, an organic layer on the lower inorganic layer, and an upper inorganic layer on the organic layer, and An end portion of the lower inorganic layer and an end portion of the upper inorganic layer are located between the second supporting member and the second dam member.

4. The display device according to claim 3, wherein: A portion of the organic layer is located between the second dam member and the first dam member.

5. The display device according to claim 3, further comprising: a bank pattern located on the first encapsulation layer and surrounding the wavelength conversion pattern, wherein at least one of the second supporting member and the second dam member and the bank pattern include the same material.

6. The display device according to claim 3, further comprising: an outer coating layer disposed between the color filter and the wavelength conversion pattern, Wherein, the second supporting member comprises the same material as the color filter or the overcoat layer.

7. The display device according to claim 6, further comprising: a bank pattern located on the first encapsulation layer and surrounding the wavelength conversion pattern, wherein the second dam member includes a same material as at least one of the color filter, the overcoat layer, and the bank pattern.

8. The display device according to claim 1, wherein: The first encapsulation layer includes a lower inorganic layer located on the light emitting element, an organic layer located on the lower inorganic layer, and an upper inorganic layer located on the organic layer. The lower inorganic layer and the upper inorganic layer cover the first dam member, and An end portion of the lower inorganic layer is located between the first dam member and the first supporting member.

9. The display device according to claim 8, wherein: The first dam member includes a first dam and a second dam spaced apart from each other, and A portion of the organic layer is located in a space between the first dam and the second dam.

10. The display device according to claim 9, wherein: An end portion of the upper inorganic layer is located between the first dam member and the first supporting member.

11. The display device according to claim 9, wherein: An end portion of the upper inorganic layer is located outside the second supporting member, and The second supporting member is located between the end portion of the upper inorganic layer and the display area.

12. The display device according to claim 1, further comprising: a connecting pad located on the base component and located in the non-display area, Wherein, the second supporting member is located between the connecting pad and the display area, and The connection pad does not overlap with the second encapsulation layer.

13. The display device according to claim 12, further comprising: a first covering layer, located between the first packaging layer and the wavelength conversion pattern; as well as a second covering layer, located between the wavelength conversion pattern and the color filter, wherein the first covering layer and the second covering layer contact each other in the non-display area, and The first cover layer and the second cover layer overlap the connection pad.

14. The display device according to claim 12, further comprising: a cover layer located between the wavelength conversion pattern and the color filter, in, The inorganic layer included in the first encapsulation layer and the cover layer contact each other in the non-display area, and The inorganic layer and the cover layer included in the first encapsulation layer overlap the connection pad.

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