Substrate film formation apparatus and substrate processing apparatus

Abstract

The embodiment of the application discloses a substrate film forming device and a substrate processing device, which comprise a container, an opening and closing valve, a susceptor, an inner shaft, an outer shaft and a first blowing mechanism; the container is provided with an exhaust hole, and the container is arranged with a reaction chamber and a heating chamber; the susceptor is rotationally arranged in the reaction chamber, the susceptor is provided with a penetrating matching hole, and the susceptor is provided with a carrier disc; the inner shaft penetrates through the bottom wall of the container along a vertical axis and is inserted into the matching hole, and the carrier disc is drivingly connected with the inner shaft in the circumferential direction; the inner shaft is divided into a first insertion section and a first exposed section by the susceptor; the outer shaft penetrates through the bottom wall of the container along the vertical axis, is arranged around the first exposed section and is drivingly connected with the susceptor; the first blowing mechanism comprises a first pipeline; the carrier disc and the susceptor have a carrier disc gap, the inner shaft and the matching hole have a matching gap, and the inner shaft and the outer shaft have an outer shaft gap; the carrier disc gap, the matching gap and the outer shaft gap are sequentially communicated to form a first blowing passage; the first pipeline is communicated to the first blowing passage; and the proportion of impurities in the film forming process is reduced.

Description

Technical Field

[0001] This application relates to the field of wafer fabrication equipment, specifically to a substrate film deposition apparatus and a substrate processing apparatus. Background Technology

[0002] The surface treatment process of wafers involves chemical vapor deposition (CVD) to chemically react one or more gaseous compounds or elements containing thin-film elements onto a substrate surface to form a thin film. During research and practice with existing technologies, the inventors of this application discovered that existing film deposition apparatuses often introduce inert gas below the rotating shaft, creating an inert gas curtain between the substrate and the fixture—a static pressure zone. When the nozzle of the wafer film deposition apparatus supplies the reactive gas, this static pressure zone only prevents some reactive gas particles from settling into the non-working area. Some reactive gas can easily remain hidden in non-working areas such as the shaft gap, resulting in a concentration of reactive gas particles in the non-working areas within the reaction chamber that does not meet the impurity requirements of the actual process. Summary of the Invention

[0003] This application provides a substrate film forming apparatus and a substrate processing apparatus, which can purge non-working areas such as axial gaps to reduce the impurity ratio in the film forming process and improve the film forming effect.

[0004] To address the aforementioned technical problems, embodiments of this application disclose the following technical solutions:

[0005] On the one hand, a substrate film forming apparatus is provided, including a container, an on / off valve, a base, an inner shaft, an outer shaft, and a first purging mechanism;

[0006] The container has an exhaust port for discharging reaction gases and purge gases, and the container has a reaction chamber and a heating chamber arranged in sequence in the vertical direction and communicating with each other.

[0007] An on / off valve, connected to the container, is used to open and close the vent hole;

[0008] A base, which is freely rotatable in the reaction chamber about a vertical axis, has a mating hole at the center of the base that penetrates its upper and lower surfaces, and at least two carrier disks arranged around the vertical axis Z are provided on the upper surface of the base along the circumferential direction.

[0009] An inner shaft passes through the bottom wall of the container along the vertical axis and is inserted into the base, with each of the carrier discs maintaining a circumferential connection with the inner shaft;

[0010] A tubular outer shaft passes through the bottom wall of the container along the vertical axis and is arranged around at least a portion of the inner shaft and is drively connected to the base;

[0011] The first purging mechanism includes a first conduit for delivering the purging gas;

[0012] Wherein, there is a carrier plate gap between the carrier plate and the base, a mating gap between the inner shaft and the base, and an outer shaft gap between the inner shaft and the sidewall of the outer shaft; the carrier plate gap, the mating gap and the outer shaft gap are sequentially connected to form a first air blowing passage; the first pipeline is connected to the first air blowing passage.

[0013] Optionally, the substrate film forming apparatus further includes:

[0014] A heating element is arranged in the heating chamber;

[0015] The second purging mechanism includes a second conduit for supplying the purging gas;

[0016] Wherein, there is a container gap between the base and the inner wall of the container, and there is a bottom gap between the bottom of the base and the heating element. The container gap, the bottom gap and the heating chamber are sequentially connected to form a second air blowing passage; the second pipe is connected to the second air blowing passage.

[0017] Optionally, the outer shaft is divided into a second insertion section inserted into the container and a second exposure section exposed outside the container, with the container as the boundary. An elastic seal connecting to the bottom of the container is arranged around the outer periphery of the second exposure section.

[0018] Optionally, there is an assembly gap between the elastic seal and the second exposed section, and the second pipeline is connected in sequence to the assembly gap and the second air blowing passage.

[0019] Optionally, the substrate film forming apparatus further includes a lifting device, which includes a plurality of linkages and a lifting arm that meshes with the linkages, the upper end of the lifting arm being connected to the container.

[0020] The elastic seal is deformable along the vertical axis, and the inner wall of the container is provided with a support arm located below the base; the linkage and the lifting arm engage to drive the container to move in the vertical direction, so that the support arm abuts against and lifts the base.

[0021] Optionally, the plurality of the lifting arms are evenly arranged around the vertical axis.

[0022] Optionally, the lifting device further includes a first transmission pair, which maintains a transmission connection with each of the linkage components to drive the linkage components to move synchronously.

[0023] Optionally, the container may have the vent hole circumferentially formed around its upper surface, flush with the base.

[0024] Optionally, the upper surface of the base is recessed with a receiving groove, and the carrier is rotated into the receiving groove; there is a carrier gap between the inner wall of the receiving groove and the carrier; the carrier gap includes a channel between the bottom wall of the receiving groove and the carrier and a first air passage between the side wall of the receiving groove away from the center of the base and the carrier;

[0025] The upper surface of the base is covered with a mask plate, and a second air passage is provided between the base and the mask plate; the mask plate at least partially covers the first air passage in the vertical direction, so that the first air passage is connected to the second air passage.

[0026] Optionally, the substrate film forming apparatus further includes a reactive gas supply assembly, which includes a nozzle that sprays the reactive gas onto the substrate on the upper surface of the carrier along the radial direction of the base.

[0027] The central axes of the outer shaft and the inner shaft are both collinear with the vertical axis (Z), and the carrier disks are evenly arranged around the nozzle.

[0028] Optionally, the outer shaft is rotatably connected to the container via a first rotary seal; the inner shaft is rotatably connected to the outer shaft via a second rotary seal.

[0029] Accordingly, embodiments of this application also provide a substrate processing apparatus, including a vacuum transport chamber with a substrate transport component disposed inside and a substrate film forming apparatus as described in any of the above claims, wherein the substrate film forming apparatus is hermetically connected to the vacuum transport chamber.

[0030] One of the above technical solutions has the following advantages or beneficial effects:

[0031] By using the purge gas in the first pipeline to purge the tray gap, mating gap, and outer shaft gap, reactive gas particles can be prevented from settling into the outer shaft gap between the outer and inner shafts, the mating gap between the inner shaft and the mating hole, and the tray gap between the tray and the base. This prevents reactive gas particles from settling into other non-working areas such as the shaft gap between the outer and inner shafts, thereby further reducing the impurity ratio in the film formation process and improving the effect of the substrate processing technology.

[0032] Another technical solution in the above-mentioned technical solution has the following advantages or beneficial effects: by using the outer shaft to drive the base to rotate, and the inner shaft to drive the carrier disk to rotate, in the process of substrate film formation, the mutual cooperation of the simultaneously rotating base and carrier disk can make the reactive gas particles deposited on the substrate more uniformly, thereby improving the substrate film formation effect. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of the substrate film forming apparatus.

[0035] Explanation of reference numerals in the attached figures:

[0036] 100, Container; 110, Reaction Chamber; 120, Heating Chamber; 121, Heating Element; 130, Support Arm; 140, Elastic Seal; 150, Exhaust Port; 160, On / Off Valve; 170, Frame; 200, Base; 210, Receiving Tank; 220, Connecting Hole; 230, Mask Plate; 231, Second Gas Channel; 300, Carrier Plate; 400, Outer Shaft; 410, Second Insertion Section; 420, Second Exposed Section; 430, First Rotary Seal Device; 500 510. Inner shaft; 520. First insertion section; 530. First exposed section; 540. Second rotary sealing device; 610. First air source; 620. First pipeline; 630. Outer shaft clearance; 640. Fitting clearance; 650. Carrier plate clearance; 710. Second air source; 720. Second pipeline; 730. Assembly clearance; 740. Bottom clearance; 750. Container clearance; 810. Linkage component; 820. Lifting arm; 830. First transmission pair; 900. Nozzle. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0038] This application provides a substrate film forming apparatus and a substrate processing apparatus. These will be described in detail below. It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments.

[0039] Example 1

[0040] The first embodiment of this application provides a substrate film formation apparatus for semiconductor wafer film formation, which forms a film by adsorbing reactive gases onto the surface of a semiconductor wafer, which serves as a substrate, in a vacuum environment. Figure 1 As shown, the above-mentioned substrate film forming apparatus includes a container 100. The container 100 has a reaction chamber 110 and a heating chamber 120 arranged in sequence in the vertical direction and communicating with each other. At the same time, the container 100 is provided with an exhaust port 150 for discharging reaction gas and purging gas. The exhaust port 150 can be opened on the side wall of the reaction chamber 110 or on the side wall of the heating chamber 120.

[0041] A valve 160 is connected to the vent 150 in the container 100. The valve 160 can be used to open and close the vent 150, thereby controlling the discharge of the reactant gas and purge gas outside the container 100. In this embodiment, the container 100 has multiple vents 150 around its perimeter. Each vent 150 can be controlled by a single valve 160, or multiple vents 150 can be controlled simultaneously by a single valve 160. This allows for control of the opening and closing of vents 150 at different locations as needed. The specific location of the vents 150 is not limited. In this embodiment, the vents 150 are positioned approximately flush with the upper surface of the base 200 inside the container 100, thus facilitating the suppression of reactant gas particle entrapment.

[0042] The reaction chamber 110 is equipped with a base 200 and a plurality of carrier disks 300. The base 200 is rotatably arranged around the vertical axis Z. At the same time, a mating hole 220 is formed in the lower surface of the base 200 at its center. The carrier disks 300 are distributed circumferentially around the vertical axis Z on the upper surface of the base 200, so as to support the semiconductor wafer as a substrate.

[0043] The aforementioned substrate film-forming apparatus further includes an outer shaft 400, an inner shaft 500, and a first purging mechanism. The inner shaft 500 passes through the bottom wall of the container 100 along the vertical axis Z and is inserted into the mating hole 220. Simultaneously, each carrier disk 300 maintains a circumferential connection with the inner shaft 500. The inner shaft 500 is divided by the base 200 into a first insertion section 510 inserted into the mating hole 220 and a first exposed section 520 exposed above the base 200. Each carrier disk 300 maintains a circumferential connection with the upper end of the first insertion section 510. The transmission relationship between the carrier disk 300 and the first insertion section 510 can be one of alternating-axis helical gear transmission, worm gear transmission, or hypoid gear transmission. In this embodiment, the transmission connection between the carrier disk 300 and the first insertion section 510 is an alternating-axis helical gear transmission. Utilizing the transmission connection between the carrier disk 300 and the first insertion section 510, the spatial positional transmission between the inner shaft 500 and the carrier disk 300 can be achieved. The first insertion section 510 of the inner shaft 500 is driven to the carrier disk 300, and the first exposed section 520 is connected to a drive motor, so that the inner shaft 500 can drive the entire carrier disk 300 to rotate synchronously around the central axis at the connection between the carrier disk 300 and the base 200.

[0044] The outer shaft 400 is tubular in shape, passes through the bottom wall of the container 100 along the vertical axis Z, and is arranged around at least a portion of the first exposed section 520 and is drive-connected to the base 200. In this embodiment, the upper end of the outer shaft 400 is drive-connected to the lower surface of the base 200, and the other end is connected to a drive motor, so that the outer shaft 400 can drive the base 200 to rotate around the vertical axis Z.

[0045] Furthermore, when the tubular outer shaft 400 is arranged around at least a portion of the first exposed section 520, since both the inner shaft 500 and the outer shaft 400 are driven to rotate by a drive motor, the first exposed sections 520 of the outer shaft 400 and the inner shaft 500 are connected by a rotary sealing device to achieve relative movement between the outer shaft 400 and the inner shaft 500. Simultaneously, to control the flow direction of the purging gas in the shaft gap between the outer shaft 400 and the inner shaft 500, it is necessary to limit the rotary sealing device to have a good sealing effect. In this embodiment, the inner shaft 500 is rotatably connected to the outer shaft 400 through a second rotary sealing device 530, wherein the second rotary sealing device 530 is preferably a magnetohydrodynamic sealing device.

[0046] In a further improved scheme, the outer shaft 400 is rotatably connected to the container 100 through the first rotary sealing device 430 to ensure the heating effect in the heating chamber 120. In this embodiment, the first rotary sealing device 430 is preferably a magnetohydrodynamic sealing device.

[0047] When the first rotary sealing device 430 is preferably a magnetohydrodynamic (MHD) sealing device, it can ensure the rotational effect between the outer shaft 400 and the bottom wall of the container 100, and also achieve the sealing of the heating chamber 120, thereby ensuring the heating effect of the heating chamber 120. In addition, the MHD sealing device can effectively reduce the particles generated by friction during operation, thereby reducing the proportion of impurities in the film-forming process. Similarly, when the second rotary sealing device 530 is preferably a MHD sealing device, it can control the relative rotation between the inner shaft 500 and the outer shaft 400, and also control the flow direction of the purging gas in the outer shaft gap 630 between the inner shaft 500 and the outer shaft 400, preventing diffusion of the purging gas at the connection between the inner shaft 500 and the outer shaft 400. In addition, the MHD sealing device can effectively reduce the particles generated by friction during operation, thereby preventing impurities from hiding in the outer shaft gap 630.

[0048] The first purging mechanism includes a first gas source 610 for storing purging gas and a first conduit 620 for conveying purging gas, one end of which is connected to the first gas source 610. An inner shaft 500 extends through the interior of an outer shaft 400 along the vertical axis Z. A first insertion section 510 of the inner shaft 500 extends out of the outer shaft 400 and mates with a carrier plate 300. A first exposed section 520 of the inner shaft 500 extends out of the outer shaft 400 and is connected to a drive motor. A carrier plate gap 650 exists between the carrier plate 300 and the base 200. A mating gap 640 exists between the outer wall of the inner shaft 500 and the inner wall of the mating hole 220. An outer shaft gap 630 exists between the outer wall of the inner shaft 500 and the inner wall of the outer shaft 400. Therefore, the carrier plate gap 650, the mating gap 640, and the outer shaft gap 630 are sequentially connected to form a first purging passage. Simultaneously, the other end of the first conduit 620, away from the first gas source 610, is connected to the first purging passage.

[0049] The purging gas in the first gas source 610 is sequentially transported through the first pipeline 620 to the outer shaft gap 630, the mating gap 640 and the carrier plate gap 650, so as to realize the flow of the purging gas in the first purging passage, and after flowing to the outlet, it is discharged to the outside of the container 100.

[0050] By using purge gas in the first conduit 620 to purge the tray gap 650, mating gap 640, and outer shaft gap 630, reactive gas particles can be prevented from settling into the outer shaft gap 630 between the outer shaft 400 and inner shaft 500, the mating gap 640 between the inner shaft 500 and mating hole 220, and the tray gap 650 between the tray 300 and base 200. Since multiple different process operations are required within the container 100 during actual production, reactive gas particles during film formation can become impurities in other processes. If reactive gas particles are hidden between the outer shaft 400 and inner shaft 500 during the film formation process, in a high-temperature working environment, these particles may diffuse into the working area and become impurities, thereby increasing the impurity ratio in subsequent processes. Therefore, in this embodiment, the flowing purge gas can be used to continuously purge the outer shaft gap 630 between the outer shaft 400 and the inner shaft 500, the mating gap 640 between the inner shaft 500 and the mating hole 220, and the carrier gap 650 between the carrier disk 300 and the base 200, thereby preventing reactive gas particles from settling into the shaft gap between the outer shaft 400 and the inner shaft 500 and other non-working areas, thereby further reducing the impurity ratio in the film formation process and improving the effect of the substrate processing process.

[0051] Furthermore, by using the outer shaft 400 to drive the base 200 to rotate, and the inner shaft 500 to drive the carrier disk 300 to rotate, the simultaneous rotation of the base 200 and the carrier disk 300 in the substrate film formation process can make the reactive gas particles deposited on the substrate more uniformly, thereby improving the substrate film formation effect.

[0052] In a further improved embodiment, the aforementioned substrate film-forming apparatus includes a heating element 121 and a second purging mechanism, wherein the heating element 121 is arranged in a heating chamber 120. The second purging mechanism includes a second gas source 710 for storing purging gas and a second conduit 720 for conveying purging gas, one end of the second conduit 720 being connected to the second gas source 710; furthermore, the first gas source 610 and the second gas source 710 can be arranged independently or combined.

[0053] There is a container gap 750 between the base 200 and the inner wall of the container 100, and there is a bottom gap 740 between the bottom of the base 200 and the heating element 121. The container gap 750, the bottom gap 740 and the heating chamber 120 are connected in sequence to form a second air blowing passage; at the same time, the end of the second pipe 720 away from the second air source 710 is connected to the second air blowing passage.

[0054] By using the purge gas in the second conduit 720 to purge the second blowing passage, reactive gas particles can be prevented from settling between the outer shaft 400 and the heating chamber 120. The purge gas in the second conduit 720 also prevents reactive gas particles from depositing inside the heating chamber 120 during the film formation process and diffusing into impurities at high temperatures. Therefore, this embodiment can reduce the impurity ratio in the substrate film formation process, thereby improving the overall substrate processing efficiency.

[0055] In addition, the purge gas in the second pipeline 720 diffuses into the heating chamber 120, which not only prevents the reaction gas from settling into the heating chamber 120, but also allows the purge gas to evenly heat the temperature inside the heating chamber 120.

[0056] In this embodiment, a first purging mechanism and a second purging mechanism are used in conjunction. The first purging mechanism purifies the first air blowing passage, thereby preventing reactive gas particles from diffusing from above the base 200 to below the carrier 300, and to other non-working areas such as the gap between the outer shaft 400 and the inner shaft 500. The second purging mechanism purifies the second air blowing passage, thereby preventing reactive gas particles from diffusing from the working area above the base 200 along the outer wall of the base 200 to other non-working areas such as inside the heating chamber 120. Therefore, the combined use of the first purging mechanism and the second purging process can achieve purging of the entire non-working area inside the container 100, thereby further reducing the impurity ratio in the film deposition process and improving the film deposition effect on the substrate.

[0057] In a further improved design, the upper surface of the base 200 is recessed with a receiving groove 210, and the aforementioned carrier disk 300 can be correspondingly disposed inside the receiving groove 210. In this embodiment, the center of the carrier disk 300 is connected to the center of the receiving groove 210 by a rotating shaft. The receiving groove 210 can restrict the position of the carrier disk 300 located inside it, maintain the flatness of the upper surface of the carrier disk 300, and make the reactive gas particles uniformly deposited on the substrate, thereby improving the accuracy of substrate film formation.

[0058] A channel exists between the lower surface of the carrier disk 300 and the bottom wall of the receiving groove 210, and a first air passage exists between the outer wall of the carrier disk 300 and the inner wall of the receiving groove 210 away from the center of the base 200. The gap formed by the combination of the channel and the first air passage is the carrier disk gap 650. When reactive gas particles perform film formation on the substrate placed on the upper surface of the carrier disk 300, the purging gas in the carrier disk gap 650 can purge the lower surface and sidewall of the carrier disk 300, thereby preventing reactive gas particles from diffusing between the carrier disk 300 and the base 200, thereby reducing the impurity ratio in the substrate processing process.

[0059] In a further improved design, a mask 230 covers the upper surface of the base 200, and a second air passage 231 is provided between the base 200 and the mask 230. The mask 230 at least partially covers the first air passage in the vertical direction, allowing the first air passage to communicate with the second air passage 231. The mask 230 covering the base 200 is substantially flush with the upper surface of the substrate placed on the carrier 300, thereby avoiding turbulence in the reaction chamber 110 and improving the accuracy of substrate film formation. Covering the upper surface of the base 200 with the mask 230 prevents reactive gases from settling onto the base 200, thus reducing the proportion of impurities in the substrate processing. The second air passage 231, located between the base 200 and the mask 230, communicates with the first air passage, thereby guiding the purge gas in the first blowing passage to flow out of the exhaust port through the second air passage 231.

[0060] In a further improved design, the carrier disks 300 are evenly arranged around the mating holes 220, and the central axes of the outer shaft 400 and the inner shaft 500 are both collinear with the vertical axis Z. The even arrangement of the carrier disks 300 around the mating holes 220, along with the collinearity of the rotation centers of the outer shaft 400 and the inner shaft 500, ensures that no additional external force other than torque is generated during the rotation of the base 200 and the carrier disks 300. Furthermore, the synchronous driving of the carrier disks 300 and the base 200 by the collinearly rotating inner shaft 500 and outer shaft 400 allows for more uniform deposition of reactive gas particles on the substrate, thereby improving the film formation effect.

[0061] In a further improved design, the substrate film deposition apparatus also includes a reactive gas supply assembly, which includes nozzles 900. The nozzles 900 spray reactive gas radially from the base 200 onto the substrate on the upper surface of the carrier 300. The nozzles 900 can be located on the upper surface of the base 200 or on the inner wall of the reaction chamber 110. Furthermore, the position, type, and number of nozzles 900 are not limited and can be determined comprehensively based on factors such as the process type, the type of reactive gas, and the quantity of reactive gas supplied, thereby improving the adaptability of the substrate film deposition apparatus to process changes.

[0062] In a further improved design, the carrier disk 300 is evenly arranged around the nozzle 900. When the inner shaft 500 and the outer shaft 400 drive the carrier disk 300 and the base 200 to rotate respectively, the reactive gas particles can be deposited more evenly on the substrate, thereby improving the film formation effect.

[0063] In a further improved embodiment, the outer shaft 400 is divided into a second insertion section 410 inserted into the container 100 and a second exposed section 420 exposed outside the container 100, with the container 100 as the boundary. An elastic seal 140 connecting to the bottom of the container 100 is arranged around the outer periphery of the second exposed section 420. In this embodiment, the cross-sectional area of ​​the elastic seal 140 is smaller than the cross-sectional area of ​​the heating chamber 120 located above it. An assembly gap 730 communicating with the second air blowing passage is formed between the inner wall of the elastic seal 140 and the outer wall of the outer shaft 400. In this embodiment, the end of the second pipe 720 communicates with the aforementioned assembly gap 730, so that the purging gas in the second pipe 720 flows through the assembly gap 730 to the second air blowing passage.

[0064] In a further improved embodiment, the substrate film-forming apparatus also includes a lifting device. This lifting device comprises multiple linkages 810 and multiple lifting arms 820, wherein the linkages 810 and lifting arms 820 are correspondingly arranged, and the lower ends of the linkages 810 and lifting arms 820 are engaged, allowing the linkages 810 to drive the lifting arms 820 to move vertically. The upper end of the lifting arm 820 is fixedly connected to the container 100. In this embodiment, the lower end of the lifting arm 820 is engaged with a gear in the linkage 810. The linkage 810 can be a gear, and the lower end of the lifting arm 820 is provided with a rack that meshes with it. Furthermore, to maintain stability when the lifting arm 820 moves vertically, the middle portion of the lifting arm 820 is slidably connected to the frame 170 via a linear bearing.

[0065] In addition, the above-mentioned elastic seal 140 can deform a certain amount along the vertical axis Z, so that the distance between the container 100 and the bottom wall of the elastic seal 140 has a certain adjustment range. In this embodiment, the elastic seal 140 can be a bellows.

[0066] A support arm 130 protrudes from the inner wall of the container 100 in a direction perpendicular to its sidewall. The support arm 130 is located below the base 200, and in this embodiment, a certain distance can be maintained between the upper surface of the support arm 130 and the lower surface of the base 200. The orthographic projection of the free end of the support arm 130 away from the container 100 on the plane containing the lower surface of the base 200 can partially coincide with the base 200. Therefore, when the lifting arm 820 is driven to move vertically upward using the linkage 810, the container 100 can drive the support arm 130 to move synchronously. The support arm 130 can abut against the lower surface of the base 200 and continue to abut against the base 200, applying a thrust to the base 200. Thus, the support arm 130 can be used to lift the base 200 to facilitate periodic maintenance of the substrate film forming apparatus. Meanwhile, during the process of lifting the base 200, the elastic seal 140 deforms along the vertical axis Z to assist in lifting the base 200. This ensures that both ends of the elastic seal 140 fix the outer walls of the container 100 and the outer shaft 400 respectively, thereby ensuring the overall sealing performance of the container 100.

[0067] In a further improved embodiment, the lifting device includes multiple lifting arms 820 arranged in parallel. In order to make the thrust applied by the lifting device to the container 100 relatively evenly distributed, in this embodiment, the multiple lifting arms 820 are evenly arranged around the vertical axis Z.

[0068] In a further improved embodiment, the lifting device further includes a first transmission pair 830. The drive motor is connected to each linkage 810 via the first transmission pair 830, thereby enabling all linkages 810 to move synchronously. Then, the engagement between the linkages 810 and the lifting arm 820 drives all lifting arms 820 to move synchronously, ensuring consistent movement distances across the bottom of the container 100 and improving stability during the lifting process of the container 100 and the base 200. In this embodiment, the first transmission pair 830 can be any one of a belt drive, chain drive, or gear drive.

[0069] Example 2

[0070] A substrate processing apparatus includes a vacuum transport chamber with a substrate transport component disposed inside and the aforementioned substrate film forming apparatus, wherein the substrate film forming apparatus is hermetically connected to the vacuum transport chamber.

[0071] The function of the substrate film forming apparatus in the substrate processing apparatus provided in this embodiment corresponds to the function implemented in Embodiment 1. Therefore, for other functions of this embodiment, please refer to the content in Embodiment 1, which will not be repeated here.

[0072] The above provides a detailed description of a substrate film forming apparatus and a substrate processing apparatus provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A substrate film forming apparatus characterized by comprising: include: The container has an exhaust port for discharging reaction gases and purge gases, and the container has a reaction chamber and a heating chamber arranged in sequence in the vertical direction and communicating with each other. An on / off valve, connected to the container, is used to open and close the vent hole; A base, which is freely rotatable about a vertical axis (Z) in the reaction chamber, has at least two carrier disks arranged around the vertical axis (Z) on its upper surface along the circumference. An inner shaft passes through the bottom wall of the container along the vertical axis (Z) and is inserted into the base, with each of the carrier discs maintaining a circumferential connection with the inner shaft; A tubular outer shaft passes through the bottom wall of the container along the vertical axis (Z) and is arranged around at least a portion of the inner shaft and is drively connected to the base; A heating element is arranged in the heating chamber; The first purging mechanism includes a first conduit for delivering the purging gas; The second purging mechanism includes a second conduit for supplying the purging gas; Wherein, there is a carrier gap between the carrier and the base, a mating gap between the inner shaft and the base, and an outer shaft gap between the inner shaft and the sidewall of the outer shaft; the carrier gap, the mating gap, and the outer shaft gap are sequentially connected to form a first air blowing passage; the first pipe is connected to the first air blowing passage; there is a container gap between the base and the inner sidewall of the container, and a bottom gap between the bottom of the base and the heating element; the container gap, the bottom gap, and the heating chamber are sequentially connected to form a second air blowing passage; the second pipe is connected to the second air blowing passage.

2. The substrate film forming apparatus according to claim 1, characterized in that, The outer shaft is divided into a second insertion section inserted into the container and a second exposure section exposed outside the container, with the container as the boundary. An elastic seal connecting to the bottom of the container is arranged around the outer periphery of the second exposure section.

3. The substrate film forming apparatus according to claim 2, characterized in that, There is an assembly gap between the elastic seal and the second exposed section, and the second pipeline is connected in sequence to the assembly gap and the second air blowing passage.

4. The substrate film formation apparatus according to claim 2, wherein The substrate film forming apparatus further includes a lifting device, which includes multiple linkages and lifting arms that mesh with the linkages, and the upper end of the lifting arm is connected to the container. The elastic seal is deformable along the vertical axis (Z), and the inner wall of the container is provided with a support arm located below the base; the linkage and the lifting arm engage to drive the container to move in the vertical direction so that the support arm abuts against and lifts the base.

5. The substrate film formation apparatus according to claim 4, wherein The multiple lifting arms are evenly arranged around the vertical axis (Z).

6. The substrate film formation apparatus according to claim 4 or 5, wherein The lifting device further includes a first transmission pair, which maintains a transmission connection with each of the linkage components to drive the linkage components to move synchronously.

7. The substrate film formation apparatus according to claim 1, wherein The container has the vent hole circumferentially arranged around its upper surface, flush with the base.

8. The substrate film forming apparatus according to claim 1, characterized in that, The upper surface of the base is recessed with a receiving groove, and the carrier is rotated and placed into the receiving groove; there is a carrier gap between the inner wall of the receiving groove and the carrier; the carrier gap includes a channel between the bottom wall of the receiving groove and the carrier and a first air passage between the side wall of the receiving groove away from the center of the base and the carrier; The upper surface of the base is covered with a mask plate, and a second air passage is provided between the base and the mask plate; the mask plate at least partially covers the first air passage in the vertical direction, so that the first air passage is connected to the second air passage.

9. The substrate film formation apparatus according to claim 1, wherein The substrate film forming apparatus further includes a reactive gas supply assembly, which includes a nozzle that sprays the reactive gas onto the substrate on the upper surface of the carrier disk along the radial direction of the base. The central axes of the outer shaft and the inner shaft are both collinear with the vertical axis (Z), and the carrier disks are evenly arranged around the nozzle.

10. The substrate film formation apparatus according to claim 1, wherein The outer shaft is rotatably connected to the container via a first rotary sealing device; the inner shaft is rotatably connected to the outer shaft via a second rotary sealing device.

11. A substrate processing apparatus, characterized by comprising: The invention includes a vacuum transport chamber with a substrate transport component inside, and a substrate film forming apparatus as described in any one of claims 1-10, wherein the substrate film forming apparatus is hermetically connected to the vacuum transport chamber.

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