Modular microwave source with multiple metal enclosures

Abstract

Embodiments disclosed herein include a modular microwave source array. In an embodiment, a housing assembly for a source array includes a first electrically conductive layer, wherein the first electrically conductive layer includes a first coefficient of thermal expansion (CTE); and a second electrically conductive layer over the first electrically conductive layer, wherein the second electrically conductive layer includes a second CTE different from the first CTE. In an embodiment, the housing assembly further includes a plurality of openings through the housing assembly, wherein each opening passes through the first electrically conductive layer and the second electrically conductive layer.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Nonprovisional Application No. 16 / 898,259, filed on June 10, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The implementation relates to the field of semiconductor manufacturing, and particularly to a monolithic source array for a high-frequency plasma source. Background Technology

[0004] Some high-frequency plasma sources include an applicator that passes through an opening in a dielectric plate. The opening allows the applicator (e.g., a dielectric cavity resonator) to be exposed to the plasma environment. However, it has been shown that plasma is also generated in the opening in the dielectric plate within the space surrounding the applicator. In processing chambers where a large area of ​​two-dimensional plasma homogeneity is desired, this structure can lead to plasma inhomogeneities within the processing chamber.

[0005] In some implementations, the applicator is positioned above the dielectric plate or within a cavity that enters (but does not penetrate) the dielectric plate. Such a configuration reduces coupling with the interior of the cavity and therefore does not provide optimal plasma generation. Coupling between high-frequency electromagnetic radiation and the interior of the cavity is weakened in part due to the additional interface between the dielectric plate and the applicator, across which the high-frequency electromagnetic radiation needs to propagate. Furthermore, variations at each applicator and across the interface of different processing tools (e.g., applicator positioning, surface roughness of the applicator and / or dielectric plate, angle of the applicator relative to the dielectric plate, etc.) can lead to plasma inhomogeneities.

[0006] In particular, when the applicator is a component separate from the dielectric plate, plasma inhomogeneities are more likely to occur (within a single processing chamber and / or across different processing chambers (e.g., chamber matching)). For example, in the case of discrete components, small variations (e.g., variations in assembly, machining tolerances, etc.) can lead to plasma inhomogeneities that negatively impact the processing conditions within the chamber. Summary of the Invention

[0007] The embodiments disclosed herein include a modular microwave source array. In one embodiment, a housing assembly for the source array includes a first conductive layer having a first coefficient of thermal expansion (CTE); and a second conductive layer above the first conductive layer, wherein the second conductive layer has a second CTE different from the first CTE. In one embodiment, the housing assembly further includes a plurality of openings through the housing assembly, wherein each opening passes through the first and second conductive layers.

[0008] Another embodiment includes an assembly comprising a source array, wherein the source array includes a dielectric plate and a plurality of dielectric resonators extending upward from the surface of the dielectric plate. In one embodiment, the assembly further includes a housing assembly above the source array. In one embodiment, the housing assembly includes a first conductive layer above the surface of the dielectric plate, wherein the first conductive layer includes a first coefficient of thermal expansion (CTE); and a second conductive layer above the first conductive layer, wherein the second conductive layer includes a second CTE different from the first CTE. In one embodiment, the housing assembly further includes a plurality of openings through the housing assembly, wherein each opening passes through the first and second conductive layers, and wherein each opening receives one of the plurality of dielectric resonators.

[0009] Another embodiment includes a processing tool. The processing tool may include a chamber and an assembly docking with the chamber. In one embodiment, the assembly includes a source array. In one embodiment, the source array includes a dielectric plate having a first surface and a second surface opposite the first surface, wherein the second surface is exposed to an internal volume of the chamber, and wherein the first surface is exposed to an external environment. The source array may further include a plurality of dielectric resonators extending from the first surface of the dielectric plate, wherein the plurality of dielectric resonators and the dielectric plate are integrally formed. In one embodiment, the assembly may further include a housing assembly above the integral source array. In one embodiment, the housing assembly may include a first conductive layer above the surface of the dielectric plate, wherein the first conductive layer includes a first coefficient of thermal expansion (CTE); and a second conductive layer above the first conductive layer, wherein the second conductive layer includes a second CTE different from the first CTE. In one embodiment, the housing assembly may further include a plurality of openings through the housing assembly, wherein each opening passes through a first conductive layer and a second conductive layer, and wherein each opening accommodates one of a plurality of dielectric resonators.

[0010] The above description of the invention does not include an exhaustive list of all embodiments. It is contemplated that it encompasses all suitable combinations of the various embodiments summarized above, as well as all systems and methods disclosed in the detailed descriptions below and specifically pointed out in the claims filed with this application. Such combinations have specific advantages not specifically listed in the above description of the invention. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of a processing tool according to one embodiment, the processing tool comprising a modular high-frequency emission source having an integral source array comprising a plurality of applicators.

[0012] Figure 2 This is a block diagram of a modular high-frequency transmission module according to one embodiment.

[0013] Figure 3A This is a perspective view of an overall source array comprising a plurality of applicators and dielectric plates according to one embodiment.

[0014] Figure 3B This is a plan view of an overall source array having a plurality of hexagonal applicators according to one embodiment.

[0015] Figure 4A This is a perspective view of an integral source array and a housing that is docked with the integral source array to form a component, according to one embodiment.

[0016] Figure 4B This is a cross-sectional view of the assembly after the overall source array and housing are assembled, according to one embodiment.

[0017] Figure 4C This is a cross-sectional view of a portion of the housing according to one embodiment, showing the first portion bolted to the second portion.

[0018] Figure 4D This is a cross-sectional view of a portion of the housing according to one embodiment, showing the first portion bonded to the second portion.

[0019] Figure 4E This is a cross-sectional view of a portion of the housing according to one embodiment, showing the first portion adhered to the second portion by an interface layer.

[0020] Figure 4F This is a cross-sectional view of an applicator according to one embodiment, the applicator comprising components from an assembly.

[0021] Figure 5 This is a cross-sectional view of a component according to one embodiment, the component comprising a gas distribution network in a second portion of the housing.

[0022] Figure 6 This is a cross-sectional view of a component according to one embodiment, the component containing a fluid channel in a first portion of the housing.

[0023] Figure 7 This is a cross-sectional view of a processing tool including components according to one embodiment, the components including an integral source array and a housing.

[0024] Figure 8 The figure shows a block diagram of an exemplary computer system that can be used in conjunction with a high-frequency plasma tool according to one embodiment. Detailed Implementation

[0025] The system described herein comprises an integral source array for a high-frequency plasma source. In the following description, numerous specific details are set forth to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that embodiments may be practiced without these specific details. In other instances, well-known aspects are not described in detail to avoid unnecessarily obscuring the embodiments. Furthermore, it should be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0026] As described above, a high-frequency plasma source with a discrete applicator can lead to plasma inhomogeneities within the chamber and suboptimal injection of high-frequency electromagnetic radiation into the chamber. Plasma inhomogeneities can arise from various causes, such as assembly problems, manufacturing tolerances, degradation, and the like. Suboptimal injection of high-frequency electromagnetic radiation into the chamber may (in part) be caused by the interface between the applicator and the dielectric plate.

[0027] Accordingly, the embodiments disclosed herein include a monolithic source array. In one embodiment, the monolithic source array comprises a dielectric plate and a plurality of protrusions extending upward from the surface of the dielectric plate. In particular, the protrusions and the dielectric plate form a single integral part. That is, the protrusions and the dielectric plate are made of a single piece of material. The protrusions have dimensions suitable for use as applicators. For example, holes can be fabricated in the protrusions to accommodate monopole antennas. Thus, the protrusions can be used as dielectric cavity resonators.

[0028] Implementing the source array as a monolithic component offers several advantages. One benefit is the ability to maintain tight machining tolerances, ensuring high uniformity between components. Given that discrete applicators require assembly, monolithic source arrays avoid potential assembly variations. Furthermore, the use of monolithic source arrays provides improved injection of high-frequency electromagnetic radiation into the chamber, as there is no longer a physical interface between the applicator and the dielectric plate.

[0029] The monolithic source array also provides improved plasma uniformity within the chamber. In particular, the surface of the dielectric plate exposed to the plasma does not include any gaps for accommodating the applicator. Furthermore, the absence of a physical interface between the protrusions and the dielectric plate improves the lateral electric field spread within the dielectric plate.

[0030] In some implementations, the monolithic source array comprises a thin dielectric plate. While the thin plate allows for improved injection of high-frequency electromagnetic radiation into the chamber, it is also more prone to breakage. In particular, stress attributable to the mismatch in the coefficient of thermal expansion (CTE) between the materials of the monolithic source array and the conductive casing surrounding it can introduce significant stress into the monolithic source array. For example, the monolithic source array may comprise alumina (which has a CTE of approximately 7 to 8 ppm), and the conductive casing may comprise aluminum (which has a CTE of approximately 22 ppm).

[0031] Accordingly, the embodiments disclosed herein include a conductive housing comprising a first conductive layer and a second conductive layer. The first conductive layer is mated to the dielectric substrate of the monolithic source array, and the second conductive layer is positioned above the first conductive layer. The first conductive layer may have a CTE that more closely matches the CTE of the monolithic source array. For example, the first conductive layer may comprise titanium (which has a CTE of approximately 8 ppm). Thus, the first conductive layer provides a buffer between the second conductive layer and the monolithic source array, and reduces thermal stress induced in the monolithic source array.

[0032] Now refer to Figure 1 According to one embodiment, a cross-sectional view of a plasma processing tool 100 is shown. In some embodiments, the processing tool 100 may be a processing tool suitable for any type of processing operation utilizing plasma. For example, the processing tool 100 may be a processing tool for plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced atomic layer deposition (PEALD), etching and selective removal processes, and plasma cleaning. Other embodiments may include a processing tool 100 that utilizes high-frequency electromagnetic radiation without generating plasma (e.g., microwave heating, etc.). As used herein, "high-frequency" electromagnetic radiation includes radio frequency radiation, very high frequency radiation, ultra-high frequency radiation, and microwave radiation. "High frequency" may refer to frequencies between 0.1 MHz and 300 GHz.

[0033] Typically, embodiments include a processing tool 100, which includes a chamber 178. In the processing tool 100, the chamber 178 may be a vacuum chamber. The vacuum chamber may include a pump (not shown) for removing gas from the chamber to provide a desired vacuum. Alternative embodiments may include a chamber 178 including one or more gas lines 170 for supplying processing gas into the chamber 178 and an exhaust line 172 for removing byproducts from the chamber 178. Although not shown, it should be understood that gas may also be injected into the chamber 178 via an integral source array 150 (e.g., as a nozzle) to uniformly distribute the processing gas over the substrate 174.

[0034] In one embodiment, the substrate 174 may be supported on a suction cup 176. For example, the suction cup 176 may be any suitable suction cup, such as an electrostatic chuck. The suction cup 176 may also include cooling lines and / or heaters to provide temperature control of the substrate 174 during processing. Due to the modular configuration of the high-frequency emission module described herein, embodiments allow the processing tool 100 to accommodate a substrate 174 of any size. For example, the substrate 174 may be a semiconductor wafer (e.g., 200 mm, 300 mm, 450 mm, or larger). Alternative embodiments also include substrates 174 other than semiconductor wafers. For example, embodiments may include a processing tool 100 configured to process glass substrates (e.g., for display technologies).

[0035] According to one embodiment, the processing tool 100 includes a modular high-frequency emission source 104. The modular high-frequency emission source 104 may include an array of high-frequency emission modules 105. In one embodiment, each high-frequency emission module 105 may include an oscillator module 106, an amplification module 130, and an applicator 142. As shown, the applicator 142 is schematically shown as integrated into an integral source array 150. However, it should be understood that the integral source array 150 may be an integral structure that includes one or more portions of the applicator 142 (e.g., a dielectric resonator) and a dielectric plate facing the interior of the chamber 178.

[0036] In one embodiment, the oscillator module 106 and the amplification module 130 may include electrical components as solid-state electrical components. In one embodiment, each of the plurality of oscillator modules 106 may be communicatively coupled to a different amplification module 130. In some embodiments, a 1:1 ratio may exist between the oscillator modules 106 and the amplification modules 130. For example, each oscillator module 106 may be electrically coupled to a single amplification module 130. In one embodiment, the plurality of oscillator modules 106 may generate incoherent electromagnetic radiation. Accordingly, the electromagnetic radiation induced in the chamber 178 will not interact in a manner that results in an undesirable interference pattern.

[0037] In one embodiment, each oscillator module 106 generates high-frequency electromagnetic radiation that is transmitted to the amplification module 130. After processing by the amplification module 130, the electromagnetic radiation is transmitted to the applicator 142. In one embodiment, the applicator 142 each emits electromagnetic radiation into the chamber 178. In some embodiments, the applicator 142 couples the electromagnetic radiation into the processing gas in the chamber 178 to generate plasma.

[0038] Now refer to Figure 2 This diagram illustrates a solid-state high-frequency emission module 105 according to one embodiment. In one embodiment, the high-frequency emission module 105 includes an oscillator module 106. The oscillator module 106 may include a voltage control circuit 210 for providing an input voltage to a voltage-controlled oscillator (VCO) 220 to generate high-frequency electromagnetic radiation at a desired frequency. Embodiments may include an input voltage between approximately 1V and 10V DC. The VCO 220 is an electronic oscillator whose oscillation frequency is controlled by the input voltage. According to one embodiment, the input voltage from the voltage control circuit 210 causes the VCO 220 to oscillate at a desired frequency. In one embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 0.1MHz and 30MHz. In another embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 30MHz and 300MHz. In yet another embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 300MHz and 1GHz. In yet another embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 1GHz and 300GHz.

[0039] According to one embodiment, electromagnetic radiation is transmitted from a voltage-controlled oscillator 220 to an amplification module 130. The amplification module 130 may include a driver / preamplifier 234 and a main power amplifier 236, each coupled to a power supply 239. According to one embodiment, the amplification module 130 may operate in a pulsed mode. For example, the amplification module 130 may have a duty cycle between 1% and 99%. In a more particular embodiment, the amplification module 130 may have a duty cycle between approximately 15% and 50%.

[0040] In one embodiment, after being processed by amplification module 130, electromagnetic radiation can be transmitted to thermal break 249 and applicator 142. However, some power transmitted to thermal break 249 may be reflected back due to output impedance mismatch. Accordingly, some embodiments include detector module 281, which allows the levels of forward power 283 and reflected power 282 to be sensed and fed back to control circuit module 221. It should be understood that detector module 281 may be located at one or more different locations in the system (e.g., between circulator 238 and thermal break 249). In one embodiment, control circuit module 221 interprets forward power 283 and reflected power 282 and determines the levels of control signal 285 communicatively coupled to oscillator module 106 and control signal 286 communicatively coupled to amplification module 130. In one embodiment, control signal 285 adjusts oscillator module 106 to optimize high-frequency radiation coupled to amplification module 130. In one embodiment, control signal 286 adjusts amplification module 130 to optimize the output power coupled to applicator 142 via thermal circuit breaker 249. In one embodiment, in addition to impedance matching tailoring in thermal circuit breaker 249, feedback control of oscillator module 106 and amplification module 130 may also allow the reflected power level to be less than approximately 5% of the forward power. In some embodiments, feedback control of oscillator module 106 and amplification module 130 may allow the reflected power level to be less than approximately 2% of the forward power.

[0041] Accordingly, the implementation allows for an increase in the percentage of forward power to be coupled into the processing chamber 178 and an increase in the available power coupled into the plasma. Furthermore, impedance tuning using feedback control is superior to impedance tuning in a typical slot-plate antenna. In a slot-plate antenna, impedance tuning involves moving two dielectric slugs formed in the applicator. This involves the mechanical movement of two separate components in the applicator, which increases the complexity of the applicator. Moreover, mechanical movement may not be as precise as the frequency variation that can be provided by the voltage-controlled oscillator 220.

[0042] Now refer to Figure 3AAccording to one embodiment, a perspective view of an integral source array 350 is shown. In one embodiment, the integral source array 350 includes a dielectric plate 360 ​​and a plurality of protrusions 366 extending upward from the dielectric plate 360. In one embodiment, the dielectric plate 360 ​​and the plurality of protrusions 366 are an integral structure. That is, there is no physical interface between the bottom of the protrusion 366 and the first surface 361 of the dielectric plate 360. As used herein, a "physical interface" refers to the first surface of a first discrete body that contacts the second surface of a second discrete body. However, in other embodiments, the protrusion 366 may be a discrete resonator that has a physical interface with the dielectric plate 360.

[0043] Each of the protrusions 366 is part of an applicator 142 used to inject high-frequency electromagnetic radiation into the processing chamber 178. In particular, the protrusions 366 serve as resonators for the applicator 142. Other components of the applicator 142 (e.g., the monopole antenna surrounding the resonator and the grounded housing) may be components separate from the overall source array 350 and are described in more detail below.

[0044] The dielectric plate 360 ​​includes a first surface 361 and a second surface 362 opposite to the first surface 361. The dielectric plate has a first thickness T1 between the first surface 361 and the second surface 362. In one embodiment, the first thickness T1 is less than about 30 mm, less than about 20 mm, less than about 10 mm, or less than about 5 mm. In a particular embodiment, the first thickness T1 is about 3 mm. Reducing the first thickness T1 provides improved coupling of high-frequency electromagnetic radiation into the processing chamber. It should be understood that reducing the thickness T1 reduces the mechanical integrity of the dielectric plate 360. In particular, the dielectric plate 360 ​​is more prone to breakage due to thermal stress from the system. However, the embodiments disclosed herein include a conductive housing (described in more detail below) comprising a first conductive layer having a CTE that closely matches the CTE of the dielectric plate 360. In this way, thermal stress is reduced and thin dielectric plates 360 (such as those described above) can be used. In the illustrated embodiment, the dielectric plate 360 ​​is shown as having a generally circular shape. However, it should be understood that the dielectric plate 360 ​​may have any desired shape (e.g., polygonal, elliptical, wedge-shaped, or similar).

[0045] A plurality of protrusions 366 extend upward from a first surface 361 of dielectric plate 360. For example, sidewalls 364 are oriented substantially perpendicular to the first surface 361 of dielectric plate 360. Each protrusion 366 further includes a third surface 363. The third surface 363 may be substantially parallel to the first surface 361. In one embodiment, a hole 365 is disposed in the third surface 363 of each protrusion. The hole 365 is sized to accommodate a monopole antenna of applicator 142. In one embodiment, the hole 365 is positioned at the axial center of the protrusion 366.

[0046] In one embodiment, the protrusion 366 may have a second thickness T2 between the first surface 361 and the third surface 363. In one embodiment, the second thickness T2 may be selected to provide a resonator for the applicator. For example, the size of the protrusion 366 may depend at least on the material of the overall source array, the thickness of the dielectric plate 360, and the desired operating frequency, among other considerations. Embodiments may generally include reducing the second thickness T2 of the protrusion as the first thickness T1 of the dielectric plate increases.

[0047] In one embodiment, a plurality of protrusions 366 are arranged in an array. In the illustrated embodiment, the plurality of protrusions 366 are arranged in a closely packed array, but other packing arrangements are also possible. Furthermore, although nineteen protrusions 366 are shown, it should be understood that embodiments may include one or more protrusions 366 extending from the first surface 361 of the dielectric plate 360. In the illustrated embodiment, each of the protrusions 366 has the same dimensions (e.g., thickness T2 and width W). In other embodiments, the dimensions of the protrusions 366 may be non-uniform.

[0048] In one embodiment, the monolithic source array 350 comprises a dielectric material. For example, the monolithic source array 350 may be a ceramic material. In one embodiment, a suitable ceramic material for the monolithic source array 350 is Al2O3. The monolithic structure may be made from a single piece of material. In other embodiments, the rough shape of the monolithic source array 350 may be formed using a molding process and subsequently machined to provide a final structure with desired dimensions. For example, green-state machining and firing may be used to provide the desired shape of the monolithic source array 350.

[0049] Now refer to Figure 3B A plan view of the integral source array 350 is shown according to another embodiment. This integral source array 350 is related to... Figure 3A The overall source array 350 is largely similar, except that the protrusions 366 have different cross-sections when viewed along a plane parallel to the first surface 361. Figure 3B In the middle, the outline of protrusion 366 is roughly hexagonal, and... Figure 3A The circle in the diagram is the opposite. Although examples of circular and hexagonal cross-sections are shown, it should be understood that protrusion 366 may contain many different cross-sections. For example, the cross-section of protrusion 366 may have any shape that is centrally symmetrical.

[0050] Now refer to Figure 4A According to one embodiment, an exploded view of component 470 is shown. In one embodiment, component 470 includes an integral source array 450 and a housing 472. The integral source array 450 may be generally similar to the integral source array 350 described above. For example, the integral source array 450 may include a dielectric plate 460 and a plurality of protrusions 466 extending upward from the dielectric plate 460.

[0051] In one embodiment, the housing 472 comprises multiple conductive layers. For example, the housing 472 may include a first conductive layer 473. A and in the first conductive layer 473 A The upper second conductive layer 473 B First conductive layer 473 A Contains a first material and a second conductive layer 473 B The system includes a second material different from the first material. Specifically, the first material has a first CTE, which is smaller than the second CTE of the second material. In one embodiment, the first CTE may closely match a third CTE of the overall source array 450. That is, the difference between the first CTE and the third CTE may be smaller than the difference between the second CTE and the third CTE. For example, the first conductive layer 473... A It may contain titanium and a second conductive layer 473 B It may contain aluminum. In one embodiment, the first conductive layer 473 A Second conductive layer 473 B It can be grounded independently. In other embodiments, the first conductive layer 473 A Second conductive layer 473 B They can be mechanically or by any form of metallic bonding to form a single conductor 473 that maintains a substantially uniform ground potential.

[0052] In one embodiment, the housing 472 includes a plurality of openings 474. The openings 474 can completely penetrate the first conductive layer 473. A Second conductive layer 473 B The thickness of the opening 474 is adjustable to receive the protrusion 466. For example, when the housing 472 moves toward the integral source array 450 (as indicated by the arrow), the protrusion 466 will be inserted into the opening 474.

[0053] Now refer to Figure 4B According to one embodiment, a cross-sectional view of component 470 is shown. As shown, the first conductive layer 473 of the housing 472... A It is supported by the first surface 461 of the dielectric plate 460. In the illustrated embodiment, the first conductive layer 473 A The first conductive layer 473 is directly supported by the first surface 461, but it should be understood that a thermal interface material or similar can be used to support the first conductive layer 473. A Separated from the first surface 461. In one embodiment, the second surface 462 of the dielectric plate 460 faces away from the housing 472.

[0054] In one embodiment, the housing 472 has a third thickness T3. The third thickness T3 of the housing 472 may be similar to the second thickness T2 of the protrusion 466. In other embodiments, the third thickness T3 of the housing 472 may be greater than or less than the second thickness T2 of the protrusion 466. In the illustrated embodiment, the first conductive layer 473... A The thickness is less than that of the second conductive layer 473 B The thickness. In some embodiments, the first conductive layer 473 A The thickness can be 473 for the second conductive layer. B The thickness is approximately one-half or less, one-quarter or less, or one-eighth or less. However, it should be understood that in other embodiments, the first conductive layer 473 A The thickness can be equal to or greater than the second conductive layer 473 B The thickness.

[0055] In the illustrated embodiment, the opening diameter O of the opening 474 is greater than the width W of the protrusion 466. This dimensional difference creates a gap 475 between the sidewall of the protrusion 466 and the sidewall of the conductor 473. The gap 475 is adapted to allow for a degree of thermal expansion while still maintaining a secure fit between the integral source array 450 and the housing 472. In some embodiments, the housing 472 is mechanically coupled to the integral source array 450.

[0056] As will be shown in more detail below, the different surfaces of component 470 will be exposed to different environments. For example, the second surface 462 is configured to be exposed to the chamber volume. The opposite sides of component 470 are configured to be exposed to the atmosphere or other environments with pressures higher than the chamber volume (e.g., approximately 1.0 atm or higher) during operation. Accordingly, the small gap 475 between conductor 473 and protrusion 466 will not experience a low-pressure environment suitable for igniting the plasma.

[0057] Now refer to Figures 4C-4E According to various embodiments, a first conductive layer 473 depicted on the housing 472 is shown. A With the second conductive layer 473B A series of cross-sectional views of the different interfaces between them.

[0058] Now refer to Figure 4C This illustrates mechanical coupling to the second conductive layer 473 via fastener 492 according to one embodiment. B First conductive layer 473 A A cross-sectional view. In one embodiment, the fastener 492 is a bolt or similar. The bolt can be inserted into the first conductive layer 473. A In the groove 491 and through the second conductive layer 473 B .

[0059] Now refer to Figure 4D The illustration shows mechanical coupling to the second conductive layer 473 via a mechanical bond at the interface according to one embodiment. B First conductive layer 473 A A cross-sectional view. For example, a diffusion bonding process or similar can be used to form a mechanical bond. In such an implementation, external fastener 492 may not be required.

[0060] Now refer to Figure 4E According to one embodiment, it is shown that the second conductive layer 473 is mechanically coupled through the interface layer 493. B First conductive layer 473 A A cross-sectional view. In one embodiment, interface layer 493 may be an adhesive. The adhesive may be a conductive adhesive. In other embodiments, interface layer 493 may be an insulating adhesive, and the first conductive layer 473 A Second conductive layer 473 B They can be grounded separately. In some embodiments, interface layer 493 can be used as an electrical pad to improve the first conductive layer 473. A With the second conductive layer 473 B Electrical coupling between them.

[0061] Now refer to Figure 4F According to one embodiment, a cross-sectional view of an applicator 442 integrated with component 470 is shown. In one embodiment, applicator 442 includes a protrusion 466, a housing 472 surrounding the protrusion 466, and a monopole antenna 468 extending into a hole 465. In one embodiment, conductive plate 476 may also cover the top surface of protrusion 466. Accordingly, portions of component 470 may be used as parts of applicator 442. For example, protrusion 466 is part of integral source array 450 and serves as a dielectric cavity resonator of applicator 442, and first conductive layer 473... A Second conductive layer 473 BIt is part of the housing 472 and serves as a ground plane surrounding the dielectric cavity resonator for the applicator 442.

[0062] The monopole antenna 468 may be surrounded by a shield 469 above component 470, and the monopole antenna 468 may be electrically coupled to a high-frequency power source (e.g., high-frequency transmitting module 105 or the like). The monopole antenna 468 passes through conductive plate 476 and extends into aperture 465. In some embodiments, aperture 465 extends deeper into protrusion 466 than monopole antenna 468. Additionally, the width of aperture 465 may be greater than the width of monopole antenna 468. Accordingly, in some embodiments, tolerances for thermal expansion are provided to prevent damage to the overall source array 450. Figure 4F The diagram also shows a thermal interface material 477 between the bottom surface of the conductor 473 and the first surface 461 of the dielectric plate 460. The thermal interface material 477 can improve heat transfer between the conductor 473 and the dielectric plate 460 when active heating or cooling is implemented in the assembly 470.

[0063] In some embodiments, housing 472 may further include a gas distribution network and / or fluid channels for active heating and / or cooling. Figure 5 and Figure 6 An embodiment depicting such a structure integrated with the multi-layered housing 472 is shown.

[0064] Now refer to Figure 5 According to one embodiment, a cross-sectional view of a portion of component 570 is shown. Component 570 includes an integral source array 550, a housing 572, and a cover plate 576.

[0065] In one embodiment, the first conductive layer 573 A Surface 533 is supported by a first surface 561 of dielectric plate 560. In one embodiment, a second surface 562 of dielectric plate 560 faces away from housing 572. Protrusions 566 of integral source array 550 are fitted into openings in housing 572. In one embodiment, cover plate 576 covers housing 572 and protrusions 566. For example, second surface 511 of cover plate 576 covers surface 534 of housing 572. Monopole antenna 568 may pass through cover plate 576 and extend into a hole 565 in the axial center of protrusion 566. The width of hole 565 may be greater than the width of monopole antenna 568. Monopole antenna 568 is electrically coupled to a power source (e.g., high-frequency transmission module 105).

[0066] In one embodiment, a gas distribution network passes through components of assembly 570. Gas is initially fed into assembly 570 via gas line 518. Gas line 518 is coupled to a first surface 512 of cover plate 576 via coupler 519. An O-ring (not shown) may be positioned between coupler 519 and first surface 512. Processed gas then travels through orifice 514, which passes through cover plate 576. A second conductive layer 573 passes through housing 572. B and the first conductive layer 573 A Gas distribution continues through orifice 535. In one embodiment, an O-ring or similar (not shown) may be wrapped around the interface between orifice 514 and orifice 535 to provide a seal.

[0067] As shown in the figure, hole 535 and the first conductive layer 573 A Channels 530 intersect within the housing 572. Channels 530 laterally distribute the processed gas. Channels 530 are sealed by a cover 531, and the gas is distributed outside the housing 572 through a group of holes 537 in the cover 531. In one embodiment, the gas then flows through holes 563 in the dielectric plate 560. Holes 563 can be aligned with holes 537 in the group 532. In one embodiment, the diameter of the holes 563 in the dielectric plate 560 is larger than the diameter of the holes 537 in the cover 531. In one embodiment, an O-ring or similar (not shown) surrounds the interface between the holes 537 in the cover 531 and the holes 563 in the dielectric plate 560. In the illustrated embodiment, channels 530 are shown entirely within the first conductive layer 573. A However, it should be understood that in other embodiments, some or all of the channel 530 may be located within the second conductive layer 573. B middle.

[0068] Now refer to Figure 6 A cross-sectional view of component 670 is shown according to one embodiment. The illustrated embodiment depicts an integral source array 650, a housing 672, and a cover plate 676. In one embodiment, the housing 672 is supported by a dielectric plate 660 and surrounds the protrusion 666. The housing 672 may include a first conductive layer 673. A Second conductive layer 673 B The second conductive layer 673 of the outer casing 672 B Includes a channel 630 sealed by a cover 631. A cover plate 676 is positioned above the housing 672 and the protrusion 666. In one embodiment, a monopole antenna 668 can pass through the cover plate 676 and be fitted into a hole 665 in the protrusion 666 located beneath the cover plate 676.

[0069] In one embodiment, rod 637 passes through conductor 679 of cover plate 676. Rod 637 can be fluidly coupled to a heat fluid source (not shown). A second rod 637 (in...) Figure 6 (Outside the plane) may be the outlet for the hot fluid flowing through the channel 630. In one embodiment, the cover plate 676 may include one or more heating elements 619. For example, an external heating element 619. A and internal heating element 619 B It is shown in the trench leading to conductor 679. Heating element 619 can be covered by cover 617. A 617 B Coverage. In the illustrated embodiment, channel 630 is shown entirely within the second conductive layer 673. B However, it should be understood that in other embodiments, some or all of the channel 630 may be located within the first conductive layer 673. A middle.

[0070] Now refer to Figure 7 The diagram shows a cross-sectional view of a processing tool 700 including a component 770 according to one embodiment. In one embodiment, the processing tool includes a chamber 778 sealed by the component 770. For example, the component 770 may be disposed against one or more O-rings 781 to provide a vacuum seal to the internal volume 783 of the chamber 778. In other embodiments, the component 770 may dock with the chamber 778. That is, the component 770 may be part of a cover sealing the chamber 778. In one embodiment, the processing tool 700 may include a plurality of processing volumes (which may be fluidly coupled together), each processing volume having a different component 770. In one embodiment, a suction cup 779 or the like may support a workpiece 774 (e.g., a wafer, substrate, etc.).

[0071] In one embodiment, component 770 may be generally similar to component 470 described above. For example, component 770 includes an integral source array 750 and a housing 772. The integral source array 750 may include a dielectric plate 760 and a plurality of protrusions 766 extending upward from a first surface 761 of the dielectric plate 760. A second surface 762 of the dielectric plate 760 may be exposed to the internal volume 783 of the chamber 778. The housing 772 may have openings sized to receive the protrusions 766. In some embodiments, a gap 775 may be provided between the protrusions 766 and the conductor 773 of the housing 772 to allow for thermal expansion. In one embodiment, the housing 772 may include a first conductive layer 773. A Second conductive layer 773 B In one embodiment, a monopole antenna 768 may extend into a hole 765 in the protrusion 766. The monopole antenna 768 may pass through a top plate 776 above the housing 772 and the protrusion 766.

[0072] In one embodiment, the chamber volume 783 may be adapted to impinge plasma 782. That is, the chamber volume 783 may be a vacuum chamber. In one embodiment, only the second surface 762 is exposed to the chamber volume 783. However, some embodiments may include a protective layer (not shown) over the second surface 762 to protect it from the processing environment. The other surfaces of the integral source array 750 are outside the chamber volume 783 and therefore do not experience the low-pressure conditions required for impinging plasma 782. Accordingly, no plasma is generated even when a high electric field is present in the gap 775 between the conductor 773 and the sidewall of the protrusion 766.

[0073] Now refer to Figure 8 According to one embodiment, a block diagram of an exemplary computer system 860 of a processing tool is illustrated. In one embodiment, the computer system 860 is coupled to and controls processing within the processing tool. The computer system 860 may be connected (e.g., networked) to other machines in a local area network (LAN), intranet, extranet, or the Internet. The computer system 860 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 860 may be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), cellular phone, web appliance, server, network router, switch, or bridge, or any machine capable of executing (sequentially or otherwise) a set of instructions specifying the action to be taken by the machine. Furthermore, although only a single machine is illustrated for computer system 860, the term "machine" should also be considered to include any collection of machines (e.g., computers) that individually or jointly execute a set (or more) of instructions to perform any one or more methods described herein.

[0074] Computer system 860 may include computer program product or software 822 having a non-transitory machine-readable medium having instructions stored on the non-transitory machine-readable medium, the instructions being usable to program computer system 860 (or other electronic device) to perform a process according to an embodiment. Machine-readable medium includes any mechanism for storing or transmitting information in a machine-readable (e.g., computer-readable) form. For example, machine-readable (e.g., computer-readable) media include machine-readable storage media (e.g., read-only memory (“ROM”), random access memory (“RAM”), disk storage media, optical storage media, flash memory devices, etc.), machine-readable transmission media (electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), and so on.

[0075] In one embodiment, the computer system 860 includes a system processor 802, a main memory 804 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) (such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), a static memory 806 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 818 (e.g., a data storage device), which communicate with each other via a bus 830.

[0076] System processor 802 represents one or more general-purpose processing devices, such as microsystem processors, central processing units, or the like. More specifically, the system processor may be a Complex Instruction Set Computing (CISC) microsystem processor, a Reduced Instruction Set Computing (RISC) microsystem processor, a Very Long Instruction Word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing combinations of instruction sets. System processor 802 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal system processors (DSPs), network system processors, or the like. System processor 802 is configured to execute processing logic 826 to perform the operations described herein.

[0077] The computer system 860 may further include a system network interface device 808 for communicating with other devices or machines. The computer system 860 may also include a video display unit 810 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 812 (e.g., a keyboard), a cursor control device 814 (e.g., a mouse), and a signal generation device 816 (e.g., a speaker).

[0078] Auxiliary storage 818 may include machine-accessible storage medium 832 (or more specifically, computer-readable storage medium) on which one or more sets of instructions (e.g., software 822) are stored, which perform any one or more of the methods or functions described herein. Software 822 may also reside wholly or at least partially in main memory 804 and / or in system processor 802 during execution by computer system 860, which also constitute machine-readable storage media. Software 822 may further be transmitted or received on network 820 via system network interface device 808. In one embodiment, network interface device 808 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0079] Although the machine-accessible storage medium 832 is shown as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be understood to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be understood to include any medium capable of storing or encoding a set of instructions executable by a machine and causing the machine to perform any one or more methods. Accordingly, the term "machine-readable storage medium" should be understood to include (but is not limited to) solid-state memory and optical and magnetic media.

[0080] Specific exemplary embodiments have been described in the foregoing specification. It will be apparent that various modifications may be made to these embodiments without departing from the scope of the appended claims. Accordingly, the specification and drawings are to be considered illustrative rather than restrictive.

Claims

1. An electrically conductive enclosure of an applicator, comprising: a first electrically conductive layer, wherein the first electrically conductive layer comprises a first coefficient of thermal expansion (CTE); a second electrically conductive layer over the first electrically conductive layer, wherein the second electrically conductive layer comprises a second CTE different from the first CTE, wherein the first CTE is about 10 ppm or less, and wherein the second CTE is about 20 ppm or more, the first electrically conductive layer and the second electrically conductive layer combining to form a single electrical conductor; and a plurality of openings through the enclosure, wherein each opening passes through the first electrically conductive layer and the second electrically conductive layer.

2. The electrically conductive enclosure of claim 1, wherein the first electrically conductive layer is mechanically coupled to the second electrically conductive layer.

3. The electrically conductive enclosure of claim 2, wherein the first electrically conductive layer is bolted to the second electrically conductive layer.

4. The electrically conductive enclosure of claim 1, further comprising: an electrical gasket between the first electrically conductive layer and the second electrically conductive layer.

5. The electrically conductive enclosure of claim 1, wherein the first electrically conductive layer comprises titanium, and wherein the second electrically conductive layer comprises aluminum.

6. The electrically conductive enclosure of claim 1, wherein the first electrically conductive layer comprises a gas distribution network.

7. The electrically conductive enclosure of claim 1, wherein the second electrically conductive layer comprises a fluid channel.

8. An assembly, comprising: a source array, wherein the source array comprises a dielectric plate and a plurality of dielectric resonators extending upward from a surface of the dielectric plate; and an enclosure assembly over the source array, wherein the enclosure assembly comprises: a first electrically conductive layer over the surface of the dielectric plate, wherein the first electrically conductive layer comprises a first coefficient of thermal expansion (CTE); a second electrically conductive layer over the first electrically conductive layer, wherein the second electrically conductive layer comprises a second CTE different from the first CTE; and a plurality of openings through the enclosure assembly, wherein each opening passes through the first electrically conductive layer and the second electrically conductive layer, and wherein each opening houses one of the plurality of dielectric resonators.

9. The assembly of claim 8, wherein the dielectric plate has a third CTE, and wherein a difference between the first CTE and the third CTE is less than a difference between the second CTE and the third CTE.

10. The assembly of claim 8, wherein the enclosure is separated from the surface of the dielectric plate by a thermal interface material.

11. The assembly of claim 8, wherein the first electrically conductive layer is mechanically coupled to the second electrically conductive layer.

12. The assembly of claim 11, wherein the first electrically conductive layer is bolted to the second electrically conductive layer.

13. The assembly of claim 8, wherein the first electrically conductive layer comprises titanium, wherein the second electrically conductive layer comprises aluminum, and wherein the dielectric plate comprises aluminum oxide.

14. The assembly of claim 8, wherein the plurality of openings pass through an entire thickness of the enclosure assembly.

15. The assembly of claim 8, wherein the plurality of dielectric resonators and the dielectric plate are a monolithic structure. ​ 16. A processing tool, comprising: a chamber; and an assembly interfacing with the chamber, wherein the assembly comprises: a source array, the source array comprising: a dielectric plate having a first surface and a second surface opposite the first surface, wherein the second surface is exposed to an interior volume of the chamber, and wherein the first surface is exposed to an external environment; and a plurality of dielectric resonators extending from the first surface of the dielectric plate, wherein the plurality of dielectric resonators and the dielectric plate are a monolithic structure; and a housing assembly over the source array, wherein the housing assembly comprises: a first conductive layer over the surface of the dielectric plate, wherein the first conductive layer comprises a first coefficient of thermal expansion (CTE); a second conductive layer over the first conductive layer, wherein the second conductive layer comprises a second CTE different from the first CTE; and a plurality of openings through the housing assembly, wherein each opening passes through the first conductive layer and the second conductive layer, and wherein each opening houses one of the plurality of dielectric resonators.

17. The processing tool of claim 16, wherein each dielectric resonator comprises a hole, and wherein a monopole antenna is disposed in each hole.

18. The processing tool of claim 17, wherein each monopole antenna is coupled to a different high frequency transmit module.

19. The processing tool of claim 16, further comprising: a plate over a surface of the housing opposite the source array.

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