Baffle device and grating etching processing equipment for processing variable-depth grooved grating

Abstract

The application discloses a baffle device for processing a light grating with varied groove depth and a light grating etching processing equipment, and belongs to the technical field of optical element processing. In order to solve the problem of uneven light guiding imaging of a diffraction grating in the prior art, the baffle device for processing the light grating with varied groove depth comprises left and right arranged left baffle mechanisms (1) and right baffle mechanisms (2). The left baffle mechanism (1) comprises a left baffle (11), the right baffle mechanism (2) comprises a right baffle (21), a longitudinal through hole (3) can be formed between the left baffle (11) and the right baffle (21), and the size, shape and position of the longitudinal through hole (3) can be changed. Therefore, the groove depth and depth distribution of the light grating calculated by optical design can be processed, and the uniformity of the light guiding imaging of the diffraction grating is effectively improved.

Description

Technical Field

[0001] This invention relates to the field of optical element processing technology, specifically a baffle device for processing variable groove depth gratings, and also a grating etching processing equipment. Background Technology

[0002] Diffractive waveguides are a mainstream technology for augmented reality (AR) near-eye displays, utilizing light diffraction and total internal reflection to propagate light within a waveguide sheet. As the propagation distance and diffraction order increase, the light energy decreases, resulting in inconsistent image brightness at different light coupling positions. This means the imaging position uniformity of the diffractive waveguide is inconsistent. Figure 1 As shown, the depth of the grating grooves in existing gratings remains unchanged. Furthermore, different incident light angles also affect the propagation step size of total internal reflection in the diffraction order of the light guide, causing uneven brightness, which is the problem of image angle uniformity in diffraction grating light guides.

[0003] As can be seen from the principle of diffractive waveguides, the main cause of imaging inhomogeneity is the change in light diffraction efficiency. Therefore, improving the grating depth distribution at different locations, thereby altering the diffraction efficiency distribution, is an effective method to improve the imaging uniformity of diffractive grating waveguides. This requires the ability to accurately fabricate the grating depth distribution calculated in the optical design. Summary of the Invention

[0004] To address the aforementioned problem of non-uniformity in diffraction grating light guide imaging, this invention provides a baffle device and a grating etching processing apparatus for processing gratings with varying groove depths. The baffle device for processing gratings with varying groove depths can form longitudinal through holes, the size, shape, and position of which can be changed, thereby enabling the processing of grating groove depths and depth distributions calculated by optical design, effectively improving the uniformity of diffraction grating light guide imaging.

[0005] The technical solution adopted by this invention to solve its technical problem is:

[0006] A baffle device for processing variable groove depth gratings includes a left baffle mechanism and a right baffle mechanism arranged left and right. The left baffle mechanism includes a left baffle and a left drive assembly connected in sequence. The left drive assembly can drive the left baffle to move in the front-back and left-right directions. The right baffle mechanism includes a right baffle and a right drive assembly connected in sequence. The right drive assembly can drive the right baffle to move in the front-back and left-right directions. A longitudinal through hole can be formed between the left baffle and the right baffle. The area below the longitudinal through hole is the grating processing area. The size, shape and position of the longitudinal through hole can be changed.

[0007] The left drive assembly includes a left Y-axis moving assembly and a left X-axis moving assembly connected in sequence. The left Y-axis moving assembly can drive the left X-axis moving assembly and the left baffle to move synchronously in the front-back direction, and the left X-axis moving assembly can drive the left baffle to move in the left-right direction.

[0008] The left Y-axis moving component includes a left Y-axis guide rail, a left Y-axis slider, and a left Y-axis drive unit. The left Y-axis guide rail extends in the front-to-back direction, and the left Y-axis drive unit can drive the left Y-axis slider to move back and forth on the left Y-axis guide rail.

[0009] The left X-axis moving component includes a left X-axis guide rail, a left X-axis slider, and a left X-axis drive unit. The left X-axis guide rail extends in the left-right direction, and the left X-axis drive unit can drive the left X-axis slider to move left and right on the left X-axis guide rail.

[0010] The left X-axis guide rail is fixed to the left Y-axis slider, and the left baffle is fixed to the left X-axis slider.

[0011] Both the left and right baffles are parallel to the horizontal plane. The side of the left baffle facing the right baffle is the left working side, and the side of the right baffle facing the left baffle is the right working side. The left and right working sides form a longitudinal through hole.

[0012] The left and right working sides are the same length, and the longitudinal through holes are rectangular, rhomboid, triangular, circular, pentagonal, or hexagonal.

[0013] The left baffle mechanism has the same structure as the right baffle mechanism. The left baffle mechanism and the right baffle mechanism can be mirror images of each other. When the area of ​​the longitudinal through hole is zero, the left baffle and the right baffle can completely block the grating processing area from top to bottom.

[0014] A grating etching processing apparatus includes an ion beam emission source and the aforementioned baffle device for processing variable groove depth gratings. The ion beam emission source is located above a longitudinal through-hole, and the ion beam emitted by the ion beam emission source can only pass through the longitudinal through-hole to bombard the grating processing area.

[0015] The grating etching equipment also includes a full-blocking etching baffle, which is located between the ion beam emission source and the longitudinal through hole. Along the top-down direction, the full-blocking etching baffle can completely block or expose the longitudinal through hole.

[0016] The beneficial effects of the present invention are: the baffle device for processing variable groove depth gratings can form longitudinal through holes, the size, shape and position of which can be changed, thereby processing the grating groove depth and depth distribution calculated by optical design, effectively improving the uniformity of diffraction grating light guide imaging. Attached Figure Description

[0017] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an improper limitation of the invention.

[0018] Figure 1 This is a schematic diagram of an existing grating.

[0019] Figure 2 This is a top view schematic diagram of the grating etching processing equipment described in this invention.

[0020] Figure 3 This is a front view schematic diagram of the grating etching processing equipment described in this invention.

[0021] Figure 4 This is a schematic diagram of the initial state of the left baffle moving to the right and the right baffle moving to the left in Embodiment 1.

[0022] Figure 5 This is a schematic diagram of the state after the left baffle moves to the right and the right baffle moves to the left in Embodiment 1.

[0023] Figure 6 This is a schematic diagram of the grating after etching in Example 1.

[0024] Figure 7 This is a schematic diagram of the initial state in Embodiment 2, where the left baffle moves to the upper right and the right baffle moves to the lower left.

[0025] Figure 8 This is a schematic diagram of the state after the left baffle moves to the upper right and the right baffle moves to the lower left in Embodiment 2.

[0026] Figure 9 This is a schematic diagram of the grating after etching in Example 2.

[0027] Figure 10 This is a schematic diagram of the initial state of the left baffle moving to the right and the right baffle moving to the left in Embodiment 3.

[0028] Figure 11 This is a schematic diagram of the state where the left baffle moves to the right and the right baffle moves to the left in Embodiment 3.

[0029] Figure 12 This is a schematic diagram of the grating after etching in Example 3.

[0030] Figure 13 This is a schematic diagram of the irregular grating etched in Example 3.

[0031] Explanation of reference numerals in the attached figures:

[0032] 1. Left baffle mechanism; 2. Right baffle mechanism; 3. Longitudinal through hole; 4. Grating processing area; 5. Fully shielded etching baffle; 6. Ion beam emission source; 7. Grating;

[0033] 11. Left baffle; 12. Left drive assembly;

[0034] 21. Right baffle; 22. Right drive assembly;

[0035] 61. Ion beam;

[0036] 71. Grating groove; 72. Two-dimensional photoresist mask;

[0037] 111. Left working side;

[0038] 121. Left Y-axis movement component; 122. Left X-axis movement component;

[0039] 211. Right working edge;

[0040] 1211, Left Y-axis guide rail; 1212, Left Y-axis slider;

[0041] 1221. Left X-axis guide rail; 1222. Left X-axis slider. Detailed Implementation

[0042] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0043] A baffle device for processing variable groove depth gratings includes a left baffle mechanism 1 and a right baffle mechanism 2 arranged left and right. The left baffle mechanism 1 includes a left baffle 11 and a left drive assembly 12 connected in sequence. The left drive assembly 12 can drive the left baffle 11 to move in four directions: front-back, left-right, and right-right. The right baffle mechanism 2 includes a right baffle 21 and a right drive assembly 22 connected in sequence. The right drive assembly 22 can drive the right baffle 21 to move in four directions: front-back, left-right, and right-right. A longitudinal through hole 3 can be formed between the left baffle 11 and the right baffle 21. Below the longitudinal through hole 3 is the grating processing area 4. The size, shape, and position of the longitudinal through hole 3 can be changed along the top-down direction, such as... Figure 2 and Figure 3 As shown.

[0044] In this embodiment, the left drive assembly 12 includes a left Y-axis moving assembly 121 and a left X-axis moving assembly 122 connected in sequence. The left Y-axis moving assembly 121 can drive the left X-axis moving assembly 122 and the left baffle 11 to move synchronously in the front-back direction, and the left X-axis moving assembly 122 can drive the left baffle 11 to move in the left-right direction. Figure 2 As shown.

[0045] In this embodiment, the left Y-axis moving component 121 includes a left Y-axis guide rail 1211, a left Y-axis slider 1212, and a left Y-axis driving unit. The left Y-axis guide rail 1211 extends in the front-back direction, and the left Y-axis driving unit can drive the left Y-axis slider 1212 to move back and forth on the left Y-axis guide rail 1211.

[0046] The left Y-axis drive unit contains a servo motor and a ball screw connected in sequence. The housing of the servo motor is fixedly connected to the left Y-axis guide rail 1211. The output shaft of the servo motor is fixedly connected to the lead screw of the ball screw. The nut of the ball screw is fixedly connected to the left Y-axis slider 1212. The rotation of the output shaft of the servo motor can precisely control the position of the left Y-axis slider 1212 in the front-back direction.

[0047] In this embodiment, the left X-axis moving component 122 includes a left X-axis guide rail 1221, a left X-axis slider 1222, and a left X-axis driving unit. The left X-axis guide rail 1221 extends in the left-right direction, and the left X-axis driving unit can drive the left X-axis slider 1222 to move left and right on the left X-axis guide rail 1221.

[0048] The left X-axis drive unit also includes a servo motor and a ball screw connected in sequence. The housing of the servo motor is fixedly connected to the left X-axis guide rail 1221. The output shaft of the servo motor is fixedly connected to the lead screw of the ball screw. The nut of the ball screw is fixedly connected to the left X-axis slider 1222. The rotation of the output shaft of the servo motor can precisely control the position of the left X-axis slider 1222 in the left and right directions.

[0049] In this embodiment, the left end of the left X-axis guide rail 1221 is fixed to the left Y-axis slider 1212, and the left end of the left baffle 11 is fixed to the left X-axis slider 1222. The left baffle 11 and right baffle 21 are made of metal and can block the passage of the ion beam 61 emitted by the ion beam emission source 6, such as... Figure 2 and Figure 3 As shown.

[0050] In this embodiment, both the left baffle 11 and the right baffle 21 are parallel to the horizontal plane. The side of the left baffle 11 facing the right baffle 21 is the left working side 111, and the side of the right baffle 21 facing the left baffle 11 is the right working side 211. The left working side 111 and the right working side 211 form a longitudinal through hole 3, which can be in an open or closed state, such as...

[0051] Figure 2 and Figure 3 As shown.

[0052] Specifically, the left working edge 111 can be a right angle, an arc, a trapezoid, or a wavy line, etc., and the right working edge 211 can be a right angle, an arc, a trapezoid, or a wavy line, etc. Preferably, the left working edge 111 and the right working edge 211...

[0053] The lengths are the same, and the longitudinal through hole 3 can be rectangular, rhomboid, triangular, circular, pentagonal, or hexagonal, etc. The left drive assembly 12 drives the left baffle 11 to move in four directions: front, back, left, and right, and the right drive assembly 22 drives the right baffle 21 to move in four directions: front, back, left, and right, so that the size, shape, and position of the longitudinal through hole 3 can be changed as needed.

[0054] In this embodiment, the left baffle mechanism 1 and the right baffle mechanism 2 have the same structure. The left baffle mechanism 1 and the right baffle mechanism 2 can be mirror images of each other. The implementation method of the left drive component 12 driving the left baffle 11 to move in the four directions of front, back, left and right is the same as the implementation method of the right drive component 22 driving the right baffle 21 to move in the four directions of front, back, left and right.

[0055] When the area of ​​the longitudinal through-hole 3 is zero, the left baffle 11 and the right baffle 21 can completely block the grating processing area 4 from top to bottom. The grating processing area 4 can be used to install and fix the grating 7 to be processed. The grating processing area 4 can also

[0056] This is called the grating processing platform. The size and shape of the left baffle 11 and the right baffle 21 should ensure that, at all times, the ion beam 61 emitted by the ion beam 0 emission source 6 can only pass through the longitudinal through-hole 3 to bombard (or be directed toward) the grating processing area 4.

[0057] Instead of bombarding (shooting) the grating processing area 4 through other means.

[0058] The following describes a grating etching process equipment, which includes an ion beam emission source 6 and the aforementioned baffle device for processing variable groove depth gratings. The ion beam emission source 6 is located directly above the longitudinal through-hole 3.

[0059] The vertically downward ion beam 61 emitted by the ion beam emission source 6 can only pass through the longitudinal through-hole 3 to bombard (direct) the grating processing area 4.

[0060] In this embodiment, the grating etching equipment may further include a full-coverage etching baffle 5, which is located between the ion beam emission source 6 and the longitudinal through-hole 3. The full-coverage etching baffle 5 can move horizontally or rotate, and in the downward direction, the full-coverage etching baffle 5 can completely block or expose the longitudinal through-hole 3, such as... Figure 2 and Figure 3 As shown.

[0061] For example, when the full-coverage etching baffle 5 is directly above the longitudinal through-hole 3, the full-coverage etching baffle 5 is in the closed position, completely blocking the longitudinal through-hole 3. When the full-coverage etching baffle 5 leaves the longitudinal through-hole 3, the full-coverage etching baffle 5 is in the open position, completely exposing the longitudinal through-hole 3. The full-coverage etching baffle 5 is made of metal and can block the passage of the ion beam 61 emitted by the ion beam emission source 6.

[0062] The following describes the working process of the baffle device and grating etching equipment used for processing variable groove depth gratings.

[0063] Example 1

[0064] 1. Fix the grating 7 to be processed with a two-dimensional photoresist mask 72 in the grating processing area 4. The two-dimensional photoresist mask 72 consists of multiple points arranged in a regular row and column. The full-blocking etching baffle 5 is in the closed position, and the longitudinal through hole 3 is rectangular.

[0065] 2. With the full-block etching baffle 5 in the open position, the left baffle 11 moves to the right, and the right baffle 21 moves to the left. The ion beam 61 emitted by the ion beam emission source 6 can only pass through the longitudinal through-hole 3 to bombard (or be directed towards) the grating processing area 4 to be processed, such as... Figure 4 and Figure 5 As shown.

[0066] The area with the two-dimensional photoresist mask 72 will not be etched by the ion beam 61, while the area without the two-dimensional photoresist mask 72 will be etched by the ion beam 61, forming grating grooves 71. When the left baffle 11 and the right baffle 21 move at a constant speed in opposite directions, the groove depth of the etched grating groove 71 is as follows: Figure 6 As shown. Changing the starting position of the baffle can control the position of the deepest groove.

[0067] Example 2

[0068] 1. Fix the grating 7 to be processed with a two-dimensional photoresist mask 72 in the grating processing area 4. The two-dimensional photoresist mask 72 consists of multiple points arranged in a regular row and column. The full-blocking etching baffle 5 is in the closed position, and the longitudinal through hole 3 is rectangular.

[0069] 2. With the full-block etching baffle 5 in the open position, the left baffle 11 moves to the upper right, and the right baffle 21 moves to the lower left. The ion beam 61 emitted by the ion beam emission source 6 can only pass through the longitudinal through-hole 3 to bombard (or be directed towards) the grating processing area 4 to be processed, such as... Figure 7 and Figure 8 As shown.

[0070] The groove depth of the engraved grating groove 71 is as follows Figure 9 As shown, the groove depth is deep in the middle and shallow around the edges.

[0071] Example 3

[0072] 1. Fix the grating 7 to be processed with a two-dimensional photoresist mask 72 in the grating processing area 4. The two-dimensional photoresist mask 72 consists of multiple points arranged in a regular row and column. The full-blocking etching baffle 5 is in the closed position, and the longitudinal through hole 3 is circular.

[0073] 2. With the full-block etching baffle 5 in the open position, the left baffle 11 moves to the right, and the right baffle 21 moves to the left. The ion beam 61 emitted by the ion beam emission source 6 can only pass through the longitudinal through-hole 3 to bombard (or be directed towards) the grating processing area 4 to be processed, 7 as... Figure 10 and Figure 11 As shown.

[0074] The groove depth of the engraved grating groove 71 is as follows Figure 12 As shown, the groove is deep in the middle and shallow around the edges, with the middle roughly forming an olive shape.

[0075] Furthermore, both the left baffle 11 and the right baffle 21 can move independently. For example, the right baffle 21 can remain stationary while the left baffle 11 moves, or vice versa. The moving speed, direction, and dwell time of the left baffle 11 can be set as needed and in conjunction with a limited number of experiments. Similarly, the moving speed, direction, and dwell time of the right baffle 21 can also be set as needed and in conjunction with a limited number of experiments. This allows for the fabrication of the grating groove depth and depth distribution calculated by the optical design, and the fabrication of the grating 7 with irregular grating grooves 71, such as... Figure 13 As shown.

[0076] Because it contains a fully shielded etching baffle 5, when two independent, unconnected regions on a sample need to be etched to different depths, the present invention can complete the etching task by starting the ion source once, without having to shut down the etching machine after etching one region, adjust the sample etching position, and then proceed with the etching of the next region.

[0077] For ease of understanding and description, this invention uses absolute positional relationships for description. Unless otherwise specified, the directional term "above" indicates... Figure 3 The direction above, the directional word "down" indicates Figure 3 The lower side of the middle, "left" indicates Figure 3 The left side of the direction, the directional word "right" indicates Figure 3 The right-hand direction in the text, the directional word "front" indicates perpendicular to. Figure 3 The direction of the paper and pointing inwards from the paper; the directional word "back" indicates perpendicular to the paper. Figure 3 The description of this invention is based on the perspective of the reader or user, but the aforementioned directional terms should not be understood or interpreted as limiting the scope of protection of this invention.

[0078] The above description is merely a specific embodiment of the present invention and should not be construed as limiting the scope of the invention. Therefore, any substitution of equivalent components or equivalent changes and modifications made within the scope of protection of this patent should still fall within the scope of this patent. Furthermore, the technical features, technical solutions, and embodiments of the present invention can be freely combined and used together.

Claims

1. A baffle device for processing variable groove depth gratings, characterized in that, The baffle device for processing variable groove depth gratings includes a left baffle mechanism (1) and a right baffle mechanism (2) arranged left and right. The left baffle mechanism (1) includes a left baffle (11) and a left drive assembly (12) connected in sequence. The left drive assembly (12) can drive the left baffle (11) to move in the front-back and left-right directions. The right baffle mechanism (2) includes a right baffle (21) and a right drive assembly (22) connected in sequence. The right drive assembly (22) can drive the right baffle (21) to move in the front-back and left-right directions. The left baffle (11) and the right baffle (21) are both parallel to the horizontal plane. The right baffle (21) is arranged at intervals above and below. The side of the left baffle (11) facing the right baffle (21) is the left working side (111), and the side of the right baffle (21) facing the left baffle (11) is the right working side (211). The left working side (111) and the right working side (211) can form a longitudinal through hole (3). The area below the longitudinal through hole (3) is the grating processing area (4). The size, shape and position of the longitudinal through hole (3) can be changed. The left working side (111) is a right angle, arc, trapezoid or wavy line, and the right working side (211) is a right angle, arc, trapezoid or wavy line.

2. The baffle device for processing variable groove depth gratings according to claim 1, characterized in that, The left drive assembly (12) includes a left Y-axis moving assembly (121) and a left X-axis moving assembly (122) connected in sequence. The left Y-axis moving assembly (121) can drive the left X-axis moving assembly (122) and the left baffle (11) to move synchronously in the front-back direction, and the left X-axis moving assembly (122) can drive the left baffle (11) to move in the left-right direction.

3. The baffle device for processing variable groove depth gratings according to claim 2, characterized in that, The left Y-axis moving assembly (121) includes a left Y-axis guide rail (1211), a left Y-axis slider (1212), and a left Y-axis driving unit. The left Y-axis guide rail (1211) extends in the front-back direction, and the left Y-axis driving unit can drive the left Y-axis slider (1212) to move back and forth on the left Y-axis guide rail (1211).

4. The baffle device for processing variable groove depth gratings according to claim 3, characterized in that, The left X-axis moving assembly (122) includes a left X-axis guide rail (1221), a left X-axis slider (1222), and a left X-axis drive unit. The left X-axis guide rail (1221) extends in the left-right direction, and the left X-axis drive unit can drive the left X-axis slider (1222) to move left and right on the left X-axis guide rail (1221).

5. The baffle device for processing variable groove depth gratings according to claim 4, characterized in that, The left X-axis guide rail (1221) is fixed on the left Y-axis slider (1212), and the left baffle (11) is fixed on the left X-axis slider (1222).

6. The baffle device for processing variable groove depth gratings according to claim 1, characterized in that, The left working edge (111) and the right working edge (211) have the same length, and the longitudinal through hole (3) is rectangular, rhomboid, triangular, circular, pentagonal or hexagonal.

7. The baffle device for processing variable groove depth gratings according to claim 1, characterized in that, The left baffle mechanism (1) has the same structure as the right baffle mechanism (2). The left baffle mechanism (1) and the right baffle mechanism (2) can be mirror images of each other. When the area of ​​the longitudinal through hole (3) is zero, the left baffle (11) and the right baffle (21) can completely block the grating processing area (4) from top to bottom.

8. A grating etching processing equipment, characterized in that, The grating etching equipment includes an ion beam emission source (6) and a baffle device for processing variable groove depth gratings as described in claim 1. The ion beam emission source (6) is located above the longitudinal through hole (3). The ion beam (61) emitted by the ion beam emission source (6) can only pass through the longitudinal through hole (3) to bombard the grating processing area (4).

9. The grating etching equipment according to claim 8, characterized in that, The grating etching equipment also includes a full-coverage etching baffle (5), which is located between the ion beam emission source (6) and the longitudinal through hole (3). In the direction from top to bottom, the full-coverage etching baffle (5) can completely cover or expose the longitudinal through hole (3).

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