Semiconductor light source device and electronic light source apparatus

Abstract

The present disclosure provides a semiconductor light source device and an electronic light source equipment. The semiconductor light source device comprises an emitting part, a converting part and a diffusing part. The emitting part is used for emitting laser beams to form a light path; the converting part is arranged in front of the emitting part along the light path and is used for exciting and converting part of the emitted laser beams to form converted light; and the diffusing part is arranged in front of the converting part along the light path and is used for diffusing the converted light and other part of the emitted laser beams which are not excited and converted to form white light. Thus, the emitted laser beams of the emitting part can be screened, so that the final emitted light beams of the semiconductor light source device can exclude unnecessary or even harmful laser beams, and the influence on the overall light beam quality can be effectively avoided, so as to ensure the display quality or illumination quality of the final emitted light beams through the diffusing part.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor optical technology, and in particular to a semiconductor light source device and an electronic light source equipment. Background Technology

[0002] Currently, mainstream projectors, monitors, and home lighting primarily use blue light-emitting diodes (LEDs) or blue lasers to excite fluorescent materials and generate white light. However, the excitation wavelength of blue light is mainly concentrated in the 440nm-455nm band, which corresponds to the largest weighting function of blue light hazard, making it prone to causing blue light hazard problems. Blue light hazards mainly affect human photobiological safety. For example, prolonged exposure of the retina to high-energy blue light can cause retinal visual damage, leading to decreased vision or even complete vision loss. In particular, for laser light source devices, the spectrum exhibits a Gaussian distribution and is narrow, making the blue light hazard problem even more severe. Moreover, traditional structural device systems generate white light, but the lack of a red light band results in poor light color quality. Current solutions to "blue light hazards" mainly involve using blue light filters to filter out some blue light. However, these filters actually cause image and color distortion, and also reduce blue light utilization and screen brightness. Summary of the Invention

[0003] (a) Technical problems to be solved

[0004] To address the technical problems of reduced blue light utilization and decreased light source beam quality caused by the use of filter films in existing technologies, this disclosure provides a semiconductor light source device and an electronic light source equipment.

[0005] (II) Technical Solution

[0006] One aspect of this disclosure provides a semiconductor light source device, comprising an emission section, a conversion section, and a diffusion section. The emission section is used to emit a laser beam to form an optical path; the conversion section is disposed in front of the emission section along the optical path to excite and convert a portion of the emitted laser beam to form converted light; the diffusion section is disposed in front of the conversion section along the optical path to diffuse the converted light and the remaining unexcited and unconverted portion of the emitted laser beam to form white light.

[0007] According to an embodiment of this disclosure, the emitting section includes a blue light source and a supplementary light source. The blue light source is disposed in the optical path behind the conversion section and is used to emit a first blue light beam satisfying the wavelength range of 430nm-460nm; the supplementary light source is located in the optical path behind the conversion section and is disposed alternately with the conversion section, and is used to emit a second blue light beam satisfying the wavelength range of 460nm-480nm.

[0008] According to an embodiment of this disclosure, the emitting section includes a supplementary light source. The supplementary light source is disposed behind the conversion section in the optical path and is used to emit a second blue light beam satisfying the wavelength range of 460nm-480nm.

[0009] According to an embodiment of this disclosure, the emitting section further includes a red light source. The red light source is located behind the conversion section in the optical path and is staggered with the conversion section, for emitting a red light beam satisfying 610nm-660nm; wherein the red light source is arranged side by side with the blue light source and / or the supplementary light source.

[0010] According to embodiments of this disclosure, the emission section further includes a heat sink layer. The heat sink layer is attached to the back of the emission section for heat dissipation.

[0011] According to embodiments of this disclosure, the conversion section includes a fluorescent material layer and a first blocking layer. The fluorescent material layer is a film structure and serves as the main structure of the conversion section for exciting and converting a portion of the emitted laser beam to form converted light. The first blocking layer, corresponding to the emission section, is located on the light-incident surface of the fluorescent material layer and is used to filter the portion of the emitted laser beam that enters from the emission section along the optical path, allowing the short-wavelength laser beam to enter the fluorescent material layer and achieve excitation and conversion.

[0012] According to embodiments of this disclosure, the conversion section further includes a second blocking layer. The second blocking layer corresponds to the light-emitting surface of the fluorescent material layer in the diffuser section, and is used to filter the converted light in the fluorescent material layer, so that the long-wavelength converted light emitted from the fluorescent material layer is emitted along the optical path to the diffuser section.

[0013] According to an embodiment of this disclosure, the diffusion section includes a diffusion plate. The diffusion plate is located in front of the fluorescent material layer or the second pass-through layer of the conversion section along the optical path, and is used to simultaneously receive the converted light generated by the excitation and conversion of the conversion section and the laser beam emitted from other parts of the unconverted section, and diffuse them to form white light.

[0014] According to embodiments of this disclosure, the fluorescent material of the fluorescent material layer can be a garnet-based cubic crystal material, SrGa2S4:Eu 2+ β-sialon: Eu 2+ Sr2MgAl 22 O 36 Mn 2+ MgAl2O4:Mn 2+ At least one of them.

[0015] One aspect of this disclosure provides an electronic light source device, including the semiconductor light source device described above.

[0016] (III) Beneficial Effects

[0017] This disclosure provides a semiconductor light source device and an electronic light source apparatus. The semiconductor light source device includes an emitting section, a conversion section, and a diffusion section. The emitting section emits a laser beam to form an optical path; the conversion section is disposed in front of the emitting section along the optical path to excite and convert a portion of the emitted laser beam, forming converted light; the diffusion section is disposed in front of the conversion section along the optical path to diffuse the converted light and other unexcited / unconverted portions of the emitted laser beam to form white light. Therefore, the semiconductor light source device of this disclosure can utilize the conversion section to excite and convert at least a portion of the emitted laser beam, converting that portion of the emitted laser into other forms of converted light, without affecting other emitted laser beams that have not been excited / converted by the conversion section. This allows for the filtering of the emitted laser beam from the emitting section, enabling the final emitted beam from the semiconductor light source device to filter out unnecessary or even harmful laser beams, effectively avoiding any impact on the overall beam quality, thereby ensuring the display quality or illumination quality of the beam ultimately emitted by the diffusion section. Attached Figure Description

[0018] Figure 1A This schematic diagram illustrates the structural composition of the optical path structure of a semiconductor light source device according to an embodiment of the present disclosure;

[0019] Figure 1B This illustration schematically shows a corresponding embodiment of the present disclosure. Figure 1A The diagram shows the structural composition of the conversion unit 102.

[0020] Figure 2A This schematic diagram illustrates the structural composition of the optical path structure of a semiconductor light source device according to another embodiment of the present disclosure;

[0021] Figure 2B This illustration schematically shows a corresponding embodiment of the present disclosure. Figure 2A The diagram shows the structural composition of the conversion unit 102.

[0022] Figure 3 This illustration schematically shows the corresponding embodiments of the present disclosure. Figure 1A The spectrum of the semiconductor light source device shown; and

[0023] Figure 4 This illustration schematically shows the corresponding embodiments of the present disclosure. Figure 2A The spectrum of the semiconductor light source device shown. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings.

[0025] It should be noted that implementations not illustrated or described in the accompanying drawings or the main text of the specification are all forms known to those skilled in the art and are not described in detail. Furthermore, the definitions of the various elements and methods described above are not limited to the specific structures, shapes, or methods mentioned in the embodiments, and those skilled in the art can easily modify or substitute them.

[0026] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding this disclosure.

[0027] Furthermore, the shapes and dimensions of the components in the figures do not reflect actual size and proportion, but are merely illustrative of embodiments of this disclosure. Additionally, any reference numerals placed between parentheses in the claims should not be construed as limiting the scope of the claims.

[0028] Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

[0029] The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify the corresponding elements does not in itself imply that the element has any ordinal number, nor does it represent the order of one element with another element or the order of manufacturing methods. The use of these ordinal numbers is only to enable a named element to be clearly distinguished from another element with the same name.

[0030] Those skilled in the art will understand that modules in the device of the embodiments can be adaptively changed and placed in one or more devices different from that embodiment. Modules, units, or components in the embodiments can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components. Except where at least some of such features and / or processes or units are mutually exclusive, any combination can be used to combine all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or device so disclosed. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that serves the same, equivalent, or similar purpose. Furthermore, in the unit claims enumerating several means, several of these means may be embodied by the same hardware item.

[0031] Similarly, it should be understood that, in order to simplify this disclosure and aid in understanding one or more of the various aspects of the disclosure, in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof. However, this approach to disclosure should not be construed as reflecting an intention that the claimed disclosure requires more features than are expressly recited in each claim. Rather, as reflected in the following claims, the aspects of the disclosure consist of fewer than all features of a single foregoing disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of the disclosure.

[0032] To address the technical problems of reduced blue light utilization and decreased light source beam quality caused by the use of filter films in existing technologies, this disclosure provides a semiconductor light source device and an electronic light source equipment.

[0033] like Figure 1A-Figure 2B As shown, one aspect of this disclosure provides a semiconductor light source device, which includes an emission section 101, a conversion section 102, and a diffusion section 103.

[0034] The output section 101 is used to form an optical path for the output laser beam;

[0035] The conversion unit 102 is disposed in front of the emission unit 101 along the optical path and is used to excite and convert part of the emitted laser beam to form converted light;

[0036] The diffuser 103 is disposed in front of the conversion unit 102 along the optical path to diffuse the converted light and the laser beam emitted from other parts that have not been excited and converted to form white light.

[0037] The ejector section 101, the conversion section 102, and the diffuser section 103 can all be supported by an integral shell structure. Each of the ejector section 101, the conversion section 102, and the diffuser section 103 can have its own supporting shell, thereby achieving fixed support on the overall shell structure.

[0038] As the source of the emitted laser beam, the emission unit 101 can emit different types of laser beams simultaneously, such as laser beams of different wavelengths. Specifically, it can emit blue laser beams of 440nm-455nm and other laser beams of other wavelengths (such as red light or blue light beams of other wavelengths). Of course, the laser beams emitted by the emission unit 101 can also be of the same type.

[0039] The laser beam emitted from the emitting section 101 can form a beam propagation path, i.e., an optical path, through the conversion section 102 and the diffusion section 103. In the optical path, the emission direction or propagation direction of the laser beam emitted from the emitting section 101 is forward, i.e., the direction away from the emission direction or the propagation direction is backward.

[0040] The conversion unit 102 is positioned in front of the output laser beam along the optical path, specifically in front of the output section 101. The conversion unit 102 has an excitation conversion material, which can excite and convert a portion of the output laser beam, transforming that portion into converted light. For example, the blue light portion (440nm-455nm) can be excited and converted into yellow light (597nm-577nm), depending on the excitation conversion material designed in the conversion unit 102. Furthermore, other portions of the laser beam emitted from the output section 101 are not excited and converted by the conversion unit 102; that is, these portions may not be incident on the conversion unit 102, thus maintaining the original characteristics of the laser beam. It should be noted that if different excitation conversion materials are used at different positions of the excitation conversion unit 102, the wavelength of the excited laser beam can also be different, resulting in different wavelengths of the final converted light.

[0041] The diffuser 103 is disposed in the optical path along the direction of the converted light transmission, located in front of the conversion section 102. That is, in the optical path, the conversion section 102 is located between the diffuser 103 and the emission section 101, and at least excites and converts the portion of the laser beam emitted from the emission section 101. The diffuser 103 can diffuse the converted light and other laser beams that are directly incident without excitation and conversion, thereby achieving homogenization and forming emitted white light at the light-emitting surface of the diffuser 103.

[0042] Therefore, the semiconductor light source device described in this embodiment can use a conversion unit to perform excitation conversion on at least a portion of the emitted laser beam, so that the emitted laser beam is converted into other forms of converted light, without affecting other emitted laser beams that have not been excited and converted by the conversion unit. In this way, the emitted laser beam of the emitting unit can be filtered, so that the beam emitted by the semiconductor light source device can filter out unnecessary or even harmful laser beams, and can effectively avoid affecting the overall beam quality, thereby ensuring the display quality or illumination quality of the beam emitted by the diffuser.

[0043] Specifically, when the laser beam excited and converted by the conversion unit 102 contains a portion of blue light in the 430nm-460nm wavelength range, this portion of blue light can be directly excited and converted into yellow light in the 560nm and above wavelength range, thereby achieving the filtering out of this portion of blue light and thus preventing blue light hazards. Furthermore, if this yellow light is diffused in the diffusion unit 103 along with the laser beam that has not been converted by the conversion unit 102 (such as other non-430nm-460nm blue and red light), a corresponding white light can be formed and emitted from the light-emitting surface of the diffusion unit 103. In this way, while preventing blue light hazards, display quality or lighting quality can be effectively guaranteed without image distortion or color distortion, thus fully improving blue light utilization and ensuring screen or display brightness.

[0044] like Figure 1A-Figure 2B As shown, according to an embodiment of the present disclosure, the emission unit 101 includes a blue light source 120 and a supplementary light source 110.

[0045] The blue light source 120 is disposed behind the conversion unit 102 in the optical path to emit a first blue light beam that meets the 430nm-460nm requirement.

[0046] The supplementary light source 110 is located behind the conversion unit 102 in the optical path and is staggered with the conversion unit 102, and is used to emit a second blue light beam that meets the 460nm-480nm requirement.

[0047] The blue light source 120 and the supplementary light source 110 can be laser light sources with supporting housings, and are directly set at the position of the emission part 101 in a side-by-side arrangement.

[0048] like Figure 1A and Figure 1B As shown, the blue light source 120 can excite laser beams with wavelengths in the 430-460nm band, corresponding to the first blue light beam. The conversion unit 102 is positioned directly opposite the blue light source 120 in the optical path, allowing the first blue light beam to directly incident on the light-incident surface of the conversion unit 102. The conversion unit 102 also has a fluorescent material used to excite the first blue light beam (this fluorescent material serves as the excitation conversion material for the first blue light beam). The wavelength of the first blue light beam corresponds to the peak excitation wavelength of the fluorescent material, ensuring high conversion efficiency of the fluorescent material for the first blue light beam and minimizing the amount of blue light remaining in the beam. This effectively filters out most of the first blue light beam, mitigating the harmful effects of emitted blue light.

[0049] like Figure 1AAs shown, the laser beam emitted by the supplementary light source 110 has a wavelength in the 460nm-480nm range, corresponding to the second blue light beam. The conversion unit 102 is positioned alternately with the supplementary light source 110 in the optical path. Since laser beams generally have strong focusing (concentrated energy) and directional emission, the second blue light beam can directly incident on the light-incident surface of the diffuser 103 without passing through the conversion unit 102. Thus, the second blue light beam, with a wavelength in the 460-480nm range, effectively avoids the 430-460nm range, where blue light pollution is most severe. It also serves as a supplementary blue light component to the first blue light beam, which has been largely filtered out, effectively achieving subsequent white light formation. Furthermore, because the supplementary light source 110 has a narrow linewidth as a blue laser, it can provide extremely pure blue light, more effectively ensuring the supplementary lighting effect on the final generated white light, thereby effectively guaranteeing image quality and illumination quality while preventing blue light pollution.

[0050] Therefore, the semiconductor light source described in the embodiments of this disclosure can provide a multispectral blue semiconductor laser light source for excitation and supplementary illumination. For example... Figure 1A As shown, the harmful blue light in the 430-460nm wavelength band can be effectively filtered out by exciting the fluorescent material with a blue laser. The 460-480nm wavelength band blue laser is used to supplement the blue light portion, as the proportion of harmful blue light in this band is relatively small, effectively reducing blue light hazard. Furthermore, as described later, a 610-660nm wavelength red laser can be used to supplement the missing red band. Ultimately, this multispectral light source can meet the requirements of a laser source with low blue light hazard and high light color quality.

[0051] like Figure 1A-Figure 2B As shown, according to an embodiment of this disclosure, the emission section includes a supplementary light source.

[0052] The supplementary light source 110 is disposed behind the conversion unit 102 in the optical path to emit a second blue light beam that meets the wavelength range of 460nm-480nm.

[0053] like Figure 2A and Figure 2B As shown, the wavelength of the second blue light beam corresponding to the supplementary light source 110 is in the 460-480nm band. This wavelength can effectively avoid the blue light band of 430-460nm, which has the most serious blue light hazard ratio, and thus can serve as a supplementary part of the blue light on the diffuser 103. Furthermore, because the supplementary light source 110 has a narrow linewidth as a blue laser, it can provide purer blue light.

[0054] like Figure 2AAs shown, the supplementary light source 110 is positioned directly behind the conversion unit 102, meaning the second blue light beam can be directly incident on the light-incident surface of the conversion unit 102, thereby allowing the conversion unit 102 to directly excite and convert the second blue light beam. Therefore, as shown... Figure 1A The fluorescent material of the conversion section 102 shown is different, such as Figure 2A The fluorescent material in the conversion unit 102 shown serves as the excitation conversion material, enabling the excitation conversion of the second blue light beam in the 460nm-480nm range, transforming it into yellow light at 560nm and above. Furthermore, as described later, a red laser in the 610-660nm band can be used to supplement the missing red band. Ultimately, this multispectral light source still meets the requirements for a laser source with low blue light hazard and high color quality.

[0055] like Figure 1A-Figure 2B As shown, according to an embodiment of the present disclosure, the emission section 101 further includes a red light source 130.

[0056] The red light source 130 is located behind the conversion unit 102 in the optical path and is staggered with the conversion unit 102, and is used to emit a red light beam that meets the requirements of 610nm-660nm.

[0057] The red light source 130 is arranged side by side with the blue light source 120 and / or the supplementary light source 110.

[0058] like Figure 1A As shown, the red light source 130, blue light source 120, and supplementary light source 110 are arranged side by side, so that they can independently generate corresponding red light beams, first blue light beams, and second blue light beams. Figure 2A As shown, the red light source 130 and the supplementary light source 110 are arranged side by side, so that they can independently generate corresponding red light beams and second blue light beams. Furthermore, referring to the above... Figure 1A The alternating arrangement of the supplementary light source 110, the red light source 130, and the conversion unit 102 can also achieve the effect that the red light beam emitted by the red light source 130 can be directly incident on the light-incident surface of the diffuser 103.

[0059] Among them, the wavelength of the red light beam corresponding to the red light source 130 is in the 610-660nm band, which is a wide range of selection; and because the red light source 130 is a narrow linewidth red laser, it can also provide extremely pure red light.

[0060] The blue light source 120, including the red light source 130, and the supplementary light source 110 can all be encased in a solid housing on the housing structure of the emission section 101. The red light source 130 for emitting the red light beam can be a red laser, the blue light source 120 for emitting the first blue light beam in the 430-460nm wavelength band can be a blue laser, and the supplementary light source 110 for emitting the second blue light beam in the 460-480nm wavelength band can also be another type of blue laser. Furthermore, the aforementioned red light source 130, blue light source 120, and supplementary light source 110 are not actually limited to lasers; for example, they can also be light-emitting diodes (LEDs).

[0061] Therefore, by utilizing the complementary red light and complementary blue light emitted from the red light source 130 and the complementary blue light source 110, respectively, and the converted yellow light generated by the first blue light beam from the blue light source 120 converted by the conversion unit 102, the beam is homogenized by the diffusion unit 103, thereby achieving high-quality white light emission. Furthermore, as another embodiment of this disclosure, by utilizing the complementary red light emitted from the red light source 130 and the converted yellow light generated by the second blue light beam from the complementary blue light source 110 converted by the conversion unit 102, the beam is homogenized by the diffusion unit 103, thereby achieving high-quality white light emission.

[0062] In other words, the semiconductor light source described in this embodiment can excite corresponding blue light by means of fluorescence excitation, and supplement the light by using a long-wavelength blue laser to achieve high-quality display or lighting while mitigating the harmful effects of blue light. Specifically, only a conventional 430-460nm single blue laser can be used to excite the fluorescent material of the conversion unit 102, thereby achieving the removal of the conventionally harmful blue light component.

[0063] For example Figure 1A-Figure 2B As shown, according to an embodiment of the present disclosure, the ejector section 101 further includes a heat sink layer 140.

[0064] The heat sink layer 140 is attached to the back of the emission section 101 to dissipate heat from the emission section 101.

[0065] The heat sink layer 140 can serve as a supporting structural layer for the emission section 101, and also function as a parallel arrangement of the red light source 130, blue light source 120, and supplementary light source 110 (e.g., ...) for the emission section 101. Figure 1A (As shown) to dissipate heat during the light emission process, or to supplement the red light source 130 and the supplementary light source 110 (as shown) arranged in parallel. Figure 2A (As shown) it plays a role in heat dissipation during the light emission process.

[0066] To achieve a good heat sinking effect, the heat sinking material that can be selected for the heat sink layer may include at least one of the following: Al, Au, Ag, Cu, AuSn, PdSn, In, SnAgCu, InSn, etc.

[0067] For example Figure 1A-Figure 2B As shown, according to an embodiment of the present disclosure, the conversion unit 102 includes a fluorescent material layer 210 and a first pass / stop layer 220.

[0068] The fluorescent material layer 210 is a film structure, which serves as the main structure of the conversion unit 102 to excite and convert part of the emitted laser beam to form converted light;

[0069] The first blocking layer 220 is located on the light-incident surface of the fluorescent material layer 210 corresponding to the emission section 101. It is used to filter the emitted laser beam that enters from the emission section along the optical path, so that the short-wavelength laser beam enters the fluorescent material layer 210 and achieves excitation conversion.

[0070] The upper and lower surfaces of the fluorescent material layer 210 can be coated separately as the light-incident and light-exit surfaces, or only one of the light-incident and light-exit surfaces can be coated to form an optical structure film layer to achieve better corresponding optical effects, mainly reflected in significantly improving the conversion efficiency of the blue light beam incident on the fluorescent material layer 210.

[0071] The fluorescent material layer 210 contains a target beam that is converted to the corresponding excitation (e.g. Figure 1A The first blue light beam shown and Figure 2A The fluorescent material (shown as a second blue light beam) enables highly efficient excitation and conversion of the corresponding target beam, forming a target converted light (such as yellow light) and emitting it from the light-emitting surface of the fluorescent material layer 210 to the diffuser 103.

[0072] The pass-through and block-through layer can serve as an optical structure film layer on the light-incident surface and / or light-exit surface of the fluorescent material layer 210, enabling the passage of the target beam incident on the fluorescent material layer 210 while blocking non-target beams (corresponding to the pass-through and block-through layer set on the light-incident surface of the fluorescent material layer 210, i.e., the first pass-through and block-through layer). Due to the blocking effect of the first blocking layer, the excitation and conversion of the target beam can be achieved without affecting the normal optical effect of other non-target beams, thus achieving effective screening of the target beam and thereby achieving the conversion and screening of harmful light bands, preventing the occurrence of blue light hazards and other situations.

[0073] like Figure 2A and Figure 2BAs shown, in one embodiment of this disclosure, the conversion unit 102 includes only a fluorescent material layer 210 and a first blocking layer 220 disposed on the light-incident surface of the fluorescent material layer 210. This allows the first blocking layer 220 to allow almost only short-wavelength laser beams (such as 460nm-480nm) emitted from the supplementary light source 110 to pass through, while blocking long-wavelength laser beams that are not short-wavelength second blue light beams. Thus, the fluorescent material layer 210 can achieve the corresponding excitation conversion almost only for the second blue light beam. That is, the first blocking layer 220 can be a short-wavelength pass-through, long-wavelength blockage structure film layer.

[0074] Since the second blue light beam has a wavelength of 460nm-480nm, rather than the 430nm-460nm wavelength range which poses a blue light hazard, a corresponding blocking layer is not required on the light-emitting surface of the fluorescent material layer 210. This allows the converted yellow light (560nm and above) corresponding to the 460nm-480nm wavelength range, converted by the fluorescent material layer 210, to be directly emitted. Simultaneously, the unconverted portion of the 460nm-480nm beam also directly exits through the light-emitting surface of the fluorescent material layer 210. After homogenization on the diffuser 103, it is easier to form high-quality white light with the supplementary red light beam. Furthermore, the converted light is effectively prevented from backscattering due to the blocking effect of the first blocking layer 220, thus improving its emission efficiency towards the diffuser 103.

[0075] like Figure 1A-Figure 2B As shown, according to embodiments of this disclosure, the fluorescent material of the fluorescent material layer 210 can be a garnet-based cubic crystal material, SrGa2S4:Eu 2+ β-sialon: Eu 2+ Sr2MgAl 22 O 36 Mn 2+ MgAl2O4:Mn 2+ At least one of them.

[0076] The fluorescent material layer 210 can be YAG:Ce 3+ (Yellow), LuAG:Ce 3+ (Green) and other garnet-based cubic crystal materials, or other fluorescent materials, such as SrGa2S4:Eu 2+ β-sialon: Eu 2+ Sr2MgAl 22 O 36 Mn 2+ MgAl2O4:Mn 2+The fluorescent materials can be selected based on the target light beam to be excited and converted, or a combination of the fluorescent materials mentioned above, in order to improve the excitation and conversion efficiency of the fluorescent material layer 210 for the target light beam.

[0077] like Figure 1A-Figure 2B As shown, according to an embodiment of the present disclosure, the conversion unit 102 further includes a second blocking layer 230.

[0078] The second blocking layer 230 is located on the light-emitting surface of the fluorescent material layer 210 corresponding to the diffuser 103. It is used to filter the converted light in the fluorescent material layer 210 so that the long-wave converted light emitted from the fluorescent material layer 210 is emitted along the optical path to the diffuser.

[0079] Similarly, the pass-through layer can also allow the target conversion light emitted from the fluorescent material layer 210 to pass through while blocking the non-target conversion light (corresponding to the pass-through layer set on the light-emitting surface of the fluorescent material layer 210, i.e. the second pass-through layer mentioned later). At the same time, after the non-target conversion light is blocked by the second pass-through layer, it can be excited and converted again in the fluorescent material layer 210, thereby greatly improving the excitation and conversion effect of the material layer.

[0080] like Figure 1A and Figure 1B As shown, in one embodiment of this disclosure, the conversion unit 102, based on the fluorescent material layer 210 and the first blocking layer 220 disposed on its light-incident surface, can further disposed a second blocking layer 230 on the light-exiting surface of the fluorescent material layer 210. This allows the second blocking layer 230 to allow almost only the long-wavelength converted light from the fluorescent material layer 210 to pass through, while blocking the short-wavelength light from the converted light. This allows the fluorescent material layer 210 to further excite and convert the short-wavelength light (such as a 430nm-460nm blue light beam) reflected back from the second blocking layer 230, thereby significantly improving its photoexcitation conversion efficiency. In other words, the second blocking layer 230 can be a long-wavelength pass-through, short-wavelength blockage structure film.

[0081] Therefore, by depositing films on both surfaces of the fluorescent material layer 210, especially by depositing a short-wavelength pass and long-wavelength block film layer as the first pass-block layer 220 on the light-incident surface of the fluorescent material layer 210 corresponding to the emission section 101, the incident blue laser light can pass through, and the yellow light converted from the blue light will not be backscattered, thereby improving the extraction efficiency of the yellow light. On the other hand, a second pass-block layer 230 with a long-wavelength pass and short-wavelength block can be deposited on the light-out surface of the fluorescent material layer 220 corresponding to the diffusion section 103, so that the remaining unconverted blue light can be re-incidentally incident into the fluorescent material layer 210 for further conversion, thereby significantly improving the excitation and conversion efficiency of the blue light and further improving the extraction efficiency of the yellow light.

[0082] In summary, to ensure the color purity of blue light, a long-pass, short-stop film technology is used in the yellow light emitting end layer of the fluorescent material layer 210 to reflect the remaining unconverted blue laser light back to the fluorescent material layer for conversion back into yellow light. This can significantly improve the conversion efficiency of the light source and at the same time greatly mitigate the harm of blue light.

[0083] It should be noted that the first blocking layer 220, which can serve as a short-wavelength blocking film layer and the second blocking layer 230, which can serve as a long-wavelength blocking film layer, in this embodiment can be multiple pairs of dielectric layers composed of one of SiO2 / TiO2, TiO2 / MgF2, etc., or they can be Bragg gratings such as SiO2 gratings, HfO2 gratings, SiO2 gratings and HfO2 gratings, etc., or they can be filters.

[0084] like Figure 1A-Figure 2B As shown, according to an embodiment of the present disclosure, the diffusion section 103 includes a diffusion plate.

[0085] The diffuser plate is located in front of the fluorescent material layer 210 or the second pass-block layer 230 of the conversion section 102 along the optical path, and is used to simultaneously receive the converted light generated by the excitation and conversion of the conversion section 102 and the laser beam emitted from other parts of the non-conversion section 102 to diffuse and form white light.

[0086] The diffuser plate can be a light-diffusing structural layer made of materials such as polycarbonate, which has a light-diffusing effect and is generally plate-shaped, capable of homogenizing the received incident light. The above-mentioned embodiments in this disclosure... Figure 1A The converted yellow light emitted by the conversion unit 102, the second blue light beam emitted by the supplementary light source 110 (which is not converted by the conversion unit 102), and the red light beam emitted by the red light source 130, after being homogenized on the diffuser plate, can achieve the effect of forming white light. Correspondingly, for another embodiment of this disclosure, the above-described... Figure 2A The converted yellow light and partially residual blue light beam emitted by the conversion unit 102, as well as the red light beam emitted by the red light source 130, can also achieve the effect of forming white light after being homogenized on the diffuser plate.

[0087] Based on the above, the semiconductor light source described in this embodiment can actually be a novel fluorescent laser light source. It uses long-wavelength blue laser light for supplemental illumination and to mitigate blue light hazards, employing only a traditional 430-460nm single blue laser for excitation of the fluorescent material layer. To ensure the color purity of the blue light, a long-pass, short-stop film technique is used at the yellow light emission end of the fluorescent material layer to reflect any remaining unconverted blue laser light back to the fluorescent material layer for further conversion into yellow light. Therefore, the semiconductor light source of this embodiment can significantly improve the conversion efficiency of the light source while effectively mitigating blue light hazards.

[0088] To further illustrate the above, Figure 1A-Figure 2B The semiconductor light source shown in this disclosure embodiment is further provided in Embodiment 1 and Embodiment 2 as follows:

[0089] Example 1:

[0090] like Figure 1A The fluorescent laser source structure shown has a fluorescent material selected as YAG:Ce in its fluorescent material layer 210. 3+ The fluorescence excitation spectrum of this fluorescent material corresponds to the emission of yellow light with a dominant wavelength of 560 nm under 455 nm incident light excitation. To achieve higher efficiency in exciting the fluorescent material YAG:Ce... 3+ A 455nm blue laser was selected as the blue light source to excite YAG:Ce. 3+ A 465nm blue laser is used as a supplementary light source 110 to supplement the blue light, and a 635nm red laser is used as a red light source 130 to supplement the red light. For example... Figure 3 The laser spectrum emitted by the semiconductor laser source in this embodiment is shown. Under 455nm laser excitation, the fluorescent material converts the blue laser band into a yellow band, leaving the remaining 455nm blue light band unconverted. Compared to single-peak chips, this avoids the 430-460nm band, where blue light hazard is most severe, and supplements the missing blue light portion using the 460-480nm blue light band. The resulting color rendering index, correlated color temperature, Duv, and blue light hazard value are shown in Table 1 below.

[0091] Table 1

[0092]

[0093] As shown in Table 1 above, by using dual blue light wavelengths, the color rendering index of this laser light source is increased to 86, and the correlated color temperature is reduced to 5567K; the blackbody radiation coordinate Duv at the same color temperature is -0.0036, which meets the requirement that Duv is less than 0.0054; and compared with a single blue light peak chip, the blue light hazard value can be reduced by 28.2%.

[0094] Example 2:

[0095] like Figure 2A The fluorescent laser source structure shown contains a fluorescent material of YAG:Ce in its fluorescent material layer 210. 3+ The fluorescence excitation spectrum of this fluorescent material corresponds to the emission of yellow light with a dominant wavelength of 560 nm under 465 nm incident light excitation. Therefore, as... Figure 2AAs shown, the structure of the fluorescent material layer 210 does not require a long-pass, short-pass film layer (i.e., the second pass-stop layer 230). It directly uses blue light in the 460nm-480nm band to excite the fluorescent material, while simultaneously using a 635nm red laser as the red light source 130 to supplement the red light. Figure 4 The laser spectrum emitted by the semiconductor laser source in Embodiment 2 shown below, including its color rendering index, correlated color temperature, Duv, and blue light hazard value, is shown in Table 2.

[0096] Table 2

[0097]

[0098] As shown in Table 2 above, by using a dual-color laser, the color rendering index of this laser light source is increased to 86, and the correlated color temperature is reduced to 5567K; the blackbody radiation coordinate Duv at the same color temperature is -0.0030, which meets the requirement that Duv is less than 0.0054; and compared with a single blue light peak chip, the blue light hazard value can be reduced by 29.2%.

[0099] Therefore, as mentioned above Figure 3 and Figure 4 As shown, the semiconductor light source device described in this embodiment can achieve the following technical effects:

[0100] (1) By using blue light of different wavelengths to correspond to different excitation and conversion functions: blue light in the 430-460nm band can be used to directly excite fluorescent materials; blue light in the 460-480nm band can effectively alleviate the "blue light hazard" caused by blue light in the 430-460nm band. This can effectively solve the problem of image color distortion caused by the current use of blue light filter films.

[0101] (2) Only lasers or light-emitting diodes can be used to excite fluorescent materials or supplement colors, thereby ensuring that the wavelength is controllable and the color is pure.

[0102] (3) The fluorescent material layer can be grown using the upper and lower film layers (i.e., the pass-through and resistance layers), which can improve the conversion efficiency of blue light and also significantly improve the extraction efficiency of yellow light.

[0103] (4) Compared with conventional laser lighting sources, this light source is closer to natural light and is of great significance to daily life.

[0104] (5) The design of this laser source allows it to contain lasers with a half-height width and narrow width, which can be used in many fields, such as special lighting and display.

[0105] One aspect of this disclosure provides an electronic light source device, including the semiconductor light source device described above.

[0106] As mentioned above, the design of this laser light source allows it to incorporate lasers with a half-width at half-maximum (HWHM) as the light source, enabling its application in a variety of fields. This allows electronic light source devices to include projectors, displays, special lighting devices, and other equipment that incorporate the aforementioned semiconductor light source devices, giving it extremely high commercial value.

[0107] The embodiments of this disclosure have now been described in detail with reference to the accompanying drawings.

[0108] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A semiconductor light source device, comprising: a semiconductor light source; a light guide; and a light guide coupling member, wherein include: The output section is used to output a laser beam and form an optical path. A conversion unit is disposed in front of the emission unit along the optical path, and is used to excite and convert a portion of the emitted laser beam to form converted light; as well as A diffuser is disposed in front of the conversion section along the optical path to diffuse the converted light and the laser beam emitted from other parts that have not been excited and converted to form white light. The emitting section includes a blue light source and a supplementary light source. The blue light source is disposed behind the conversion section in the optical path and is used to emit a first blue light beam with a wavelength of 430nm-460nm. The supplementary light source is located behind the conversion section in the optical path and is interleaved with the conversion section. It is used to emit a second blue light beam with a wavelength of 460nm-480nm.

2. The semiconductor light source device according to claim 1, wherein, The ejector section also includes: A red light source is located behind the conversion unit in the optical path and is staggered with the conversion unit to emit a red light beam that meets the requirements of 610nm-660nm. The red light source is arranged side by side with the blue light source and / or the supplementary light source.

3. The semiconductor light source apparatus according to claim 1, wherein The ejector section also includes: A heat sink layer is attached to the back of the emission section to dissipate heat from the emission section.

4. The semiconductor light source apparatus according to claim 1, wherein The conversion unit includes: The fluorescent material layer, a film structure, serves as the main structure of the conversion unit and is used to excite and convert a portion of the emitted laser beam to form converted light. The first blocking layer, corresponding to the emission portion located on the light-incident surface of the fluorescent material layer, is used to filter the portion of the emitted laser beam that enters from the emission portion along the optical path, so that the short-wavelength laser beam enters the fluorescent material layer and achieves excitation conversion.

5. The semiconductor light source apparatus according to claim 4, wherein The conversion unit further includes: The second blocking layer, corresponding to the diffuser, is located on the light-emitting surface of the fluorescent material layer. It is used to filter the converted light in the fluorescent material layer, so that the long-wavelength converted light emitted from the fluorescent material layer is emitted along the optical path to the diffuser.

6. The semiconductor light source apparatus according to claim 1, wherein The diffusion section includes: A diffuser plate is located in front of the fluorescent material layer or the second pass-through layer of the conversion section along the optical path. It is used to simultaneously receive the converted light generated by the conversion section and the laser beam emitted from other parts of the unconverted section and diffuse it to form white light.

7. The semiconductor light source apparatus according to claim 4, wherein The fluorescent material in the fluorescent material layer can be a garnet-based cubic crystal material, SrGa2S4:Eu... 2+ β-sialon:Eu 2+ Sr2MgAl 22 O 36 :Mn 2+ MgAl2O4:Mn 2+ At least one of them.

8. An electronic light source device, comprising the semiconductor light source device according to any one of claims 1-7.

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