Wafer processing method and wafer bonding structure

Abstract

The application relates to the field of wafer processing, and discloses a wafer processing method and a wafer bonding structure. The wafer processing method comprises the following steps: preparing a wafer structure body, the wafer structure body comprises a laminated film structure, the laminated film structure comprises a first region and a second region, the laminated film structure comprises a first dielectric layer, the first region is formed with a first groove in the first dielectric layer, the second region is formed with a second groove in the first dielectric layer, the depth of the first groove is smaller than the depth of the second groove; metalizing the wafer structure body to form a metalized first groove and a metalized second groove; removing the metal on the laminated film structure; polishing the first dielectric layer of the first region and the second region; the polishing thickness of the first dielectric layer is greater than or equal to the depth of the first groove in the first dielectric layer, and the step difference between the first region and the second region is reduced through the metalized first groove in the polishing process. The application reduces the step difference between different regions of the wafer through grooves with different depths, and then forms a relatively flat surface.

Images