sensor
By employing a three-layer insulation structure in the sensor, the problem of easy cracking of the insulation layer between the metal layer and the sensor element is solved, thereby improving the manufacturing reliability and performance stability of the sensor.
CN115840168BActive Publication Date: 2026-05-26TDK CORP
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TDK CORP
- Filing Date
- 2022-09-20
- Publication Date
- 2026-05-26
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Figure CN115840168B_ABST
Abstract
The magnetic sensor includes a first insulating layer, a second insulating layer, and a third insulating layer, a lower coil element disposed on the side of the first insulating layer opposite to the second insulating layer, and a second MR element. The second MR element includes a magnetization fixed layer and a free layer. The magnetization fixed layer and the free layer are disposed on the side of the third insulating layer opposite to the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.
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