sensor

Abstract

A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a first layer and a second layer, and has first and second inclined surfaces formed through the first and second layers. The first and second MR elements each include a magnetization fixed layer and a free layer. The magnetization fixed layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization fixed layer and the free layer of the second MR element are disposed on the second inclined surface.

Description

Technical Field

[0001] This invention relates to sensors in which an insulating layer exists between a metal layer and a sensor element. Background Technology

[0002] In recent years, magnetic sensors using magnetoresistive elements have been employed in various applications. In systems incorporating magnetic sensors, it is sometimes desirable to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate using a magnetoresistive element disposed on a substrate. In such cases, by providing a soft magnetic material that converts the magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or by disposing of the magnetoresistive element on an inclined surface formed on the substrate, it is possible to detect a magnetic field component that includes a direction perpendicular to the surface of the substrate.

[0003] Japanese Patent Application Publication No. 2006-261401 discloses a magnetic sensor having an X-axis sensor, a Y-axis sensor, and a Z-axis sensor disposed on a substrate. The magnetoresistive element constituting the Z-axis sensor is disposed on the inclined surface of a protrusion formed on a base film of the substrate. The protrusion is formed by dry etching a thick film made of silicon oxide.

[0004] In the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-261401, a wiring layer is pre-formed on a substrate. The base film is composed of multiple insulating films formed on the wiring layer. Here, it is considered to provide electrode pads connected to the wiring layer on the substrate on the upper surface of the insulating film. In this case, a structure made of a metallic material is embedded in the insulating film, connecting the wiring layer and the electrode pads. In Japanese Patent Application Publication No. 2006-261401, dry etching is performed on the insulating film, which serves as the base film, to form protrusions. When etching the insulating film in which the structure made of a metallic material is embedded, due to differences in etching rates, the structure protrudes significantly from the upper surface of the insulating film.

[0005] Not limited to the magnetic sensor disclosed in Japanese Patent Application Publication No. 2006-261401, in sensors where the sensor element is formed on an inclined surface, from the viewpoint of miniaturization and ease of fabrication, a wiring layer is sometimes formed on the substrate side of the inclined surface. Therefore, the above-mentioned problem is not limited to magnetic sensors, but applies to all sensors where the sensor element is formed on an inclined surface. Summary of the Invention

[0006] The purpose of this invention is to provide a sensor in which a functional layer of sensor elements is formed on the inclined surface of a support member, and a structure can be embedded in the support member.

[0007] The sensor of the present invention is configured to detect a predetermined physical quantity. The sensor of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, and a sensor element configured such that its properties change according to the predetermined physical quantity. The support member includes a first layer and a second layer disposed above the first layer, and has at least one inclined surface extending across the first and second layers. The sensor element includes a functional layer constituting at least a portion of the sensor element. The functional layer is disposed on the at least one inclined surface.

[0008] In the sensor of the present invention, the support member has at least one inclined surface. A functional layer of the sensor element is disposed on the at least one inclined surface. The at least one inclined surface extends over both the first and second layers of the support member. Therefore, according to the present invention, in a sensor in which a functional layer of the sensor element is formed on the inclined surface of the support member, a structure can be embedded in the support member.

[0009] Other objects, features and advantages of the present invention will become sufficiently clear from the following description. Attached Figure Description

[0010] Figure 1 This is a perspective view of a magnetic sensor according to an embodiment of the present invention.

[0011] Figure 2 This is a functional block diagram showing the structure of a magnetic sensor device including a magnetic sensor according to an embodiment of the present invention.

[0012] Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit according to an embodiment of the present invention.

[0013] Figure 4 This is a circuit diagram illustrating the circuit structure of the second detection circuit according to an embodiment of the present invention.

[0014] Figure 5 This is a top view showing a portion of a magnetic sensor according to an embodiment of the present invention.

[0015] Figure 6 This is a cross-sectional view showing a portion of a magnetic sensor according to an embodiment of the present invention.

[0016] Figure 7 This is a side view showing a magnetoresistive effect element according to an embodiment of the present invention.

[0017] Figure 8 This is a cross-sectional view showing a step in a method for manufacturing a magnetic sensor according to an embodiment of the present invention.

[0018] Figure 9 It means to continue Figure 8 The shown is a cross-sectional view of the process.

[0019] Figure 10 It means to continue Figure 9 The shown is a cross-sectional view of the process.

[0020] Figure 11 It means to continue Figure 10 The shown is a cross-sectional view of the process.

[0021] Figure 12 This is an explanatory diagram illustrating the shape of a support member according to an embodiment of the present invention.

[0022] Figure 13 This is an explanatory diagram illustrating the shape of the convex surface in one embodiment of the present invention.

[0023] Figure 14 This is an explanatory diagram showing a graph representing a function of the shape of a convex surface according to an embodiment of the present invention.

[0024] Figure 15 It means Figure 14 The diagram illustrates the curve of the first derivative of the function shown.

[0025] Figure 16 It means Figure 14 The diagram illustrates the curve of the second derivative of the function shown. Detailed Implementation

[0026] The embodiments of the present invention described below relate to sensors configured to detect a predetermined physical quantity. In these embodiments, the sensor includes a sensor element configured such that its properties change according to the predetermined physical quantity. For example, the predetermined physical quantity may be at least one of the direction and intensity of the magnetic field of the object being detected. In this case, the sensor element may also be a magnetic detection element configured to detect changes in at least one of the direction and intensity of the magnetic field of the object. A sensor including a magnetic detection element is also called a magnetic sensor. The magnetic sensor is configured to detect at least one of the direction and intensity of the magnetic field of the object. Hereinafter, the embodiments will be described in detail using the case where the sensor is a magnetic sensor as an example.

[0027] First, refer to Figure 1 and Figure 2 The structure of a magnetic sensor according to one embodiment of the present invention will be described. Figure 1 This is a perspective view showing the magnetic sensor of this embodiment. Figure 2 This is a functional block diagram showing the structure of a magnetic sensor device including the magnetic sensor of this embodiment. The magnetic sensor 1 of this embodiment corresponds to the "sensor" of the present invention.

[0028] like Figure 1As shown, the magnetic sensor 1 has the form of a cuboid-shaped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface located on opposite sides, and four side surfaces connecting the upper surface 1a and the lower surface. Additionally, the magnetic sensor 1 has multiple electrode pads disposed on the upper surface 1a.

[0029] Here, refer to Figure 1 The reference coordinate system of this embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor 1, and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, Y direction, and Z direction are defined. The X direction, Y direction, and Z direction are orthogonal to each other. In this embodiment, specifically, the direction perpendicular to the upper surface 1a of the magnetic sensor 1 and extending from the lower surface of the magnetic sensor 1 towards the upper surface 1a is defined as the Z direction. Furthermore, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes defining the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0030] Hereinafter, the position in front of the reference position in the Z direction will be referred to as "above," and the position on the opposite side of the reference position relative to "above" will be referred to as "below." Furthermore, regarding the components of the magnetic sensor device 1, the surface at the end in the Z direction will be referred to as the "upper surface," and the surface at the end in the -Z direction will be referred to as the "lower surface." Additionally, the expression "when viewed from the Z direction" refers to viewing the object from a position away from the Z direction.

[0031] like Figure 2 As shown, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20 and 30 includes a plurality of magnetic detection elements and is configured to generate at least one detection signal in response to the magnetic field of the target object. In this embodiment, in particular, the plurality of magnetic detection elements are a plurality of magnetoresistive effect elements. Hereinafter, magnetoresistive effect elements will be referred to as MR elements.

[0032] The multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to generate a first detection value and a second detection value by processing the multiple detection signals generated by the first and second detection circuits 20 and 30. These first and second detection values ​​correspond to components of the magnetic field in two distinct directions at a predetermined reference position. In this embodiment, specifically, the two distinct directions are a direction parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is, for example, constructed from an application-specific integrated circuit (ASIC).

[0033] The processor 40 may also be included in a support body supporting the magnetic sensor 1. This support body has multiple electrode pads. The first and second detection circuits 20 and 30 and the processor 40 are connected, for example, via the multiple electrode pads of the magnetic sensor 1, the multiple electrode pads of the support body, and multiple bonding wires. When the multiple electrode pads of the magnetic sensor 1 are disposed on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 may also be mounted on the upper surface of the support body with its lower surface facing the upper surface of the support body.

[0034] Next, refer to Figures 3-6 The first and second detection circuits 20 and 30 will be described. Figure 3 This is a circuit diagram showing the circuit structure of the first detection circuit 20. Figure 4 This is a circuit diagram showing the circuit structure of the second detection circuit 30. Figure 5 This is a top view showing a portion of magnetic sensor 1. Figure 6 This is a cross-sectional view showing a portion of the magnetic sensor 1.

[0035] Here, as Figure 5 As shown, the U direction and V direction are defined as follows. The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, specifically, the U direction is defined as the direction rotated by α from the X direction toward the -Y direction, and the V direction is defined as the direction rotated by α from the Y direction toward the X direction. Furthermore, α is an angle greater than 0° and less than 90°. In one example, α is 45°. In addition, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0036] In addition, such as Figure 6 As shown, the W1 and W2 directions are defined as follows. The W1 direction is a rotation from the V direction toward the -Z direction. The W2 direction is a rotation from the V direction toward the Z direction. In this embodiment, specifically, the W1 direction is defined as a rotation of β from the V direction toward the -Z direction, and the W2 direction is defined as a rotation of β from the V direction toward the Z direction. Furthermore, β is an angle greater than 0° and less than 90°. Additionally, the direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. Both the W1 and W2 directions are orthogonal to the U direction.

[0037] The first detection circuit 20 is configured to detect the component of the magnetic field of the object in the direction parallel to the W1 direction, and generates at least one first detection signal corresponding to this component. The second detection circuit 30 is configured to detect the component of the magnetic field of the object in the direction parallel to the W2 direction, and generates at least one second detection signal corresponding to this component.

[0038] like Figure 3 As shown, the first detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the first detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0039] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0040] like Figure 4 As shown, the second detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the second detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0041] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0042] Apply a specified voltage or current to power supply terminals V2 and V3 respectively. Ground terminals G2 and G3 are grounded respectively.

[0043] Hereinafter, the plurality of MR elements in the first detection circuit 20 will be referred to as a plurality of first MR elements 50B, and the plurality of MR elements in the second detection circuit 30 will be referred to as a plurality of second MR elements 50C. Since the first and second detection circuits 20 and 30 are constituent elements of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes a plurality of first MR elements 50B and a plurality of second MR elements 50C. In addition, any MR element will be indicated by the symbol 50.

[0044] Figure 7This is a side view of the MR element 50. The MR element 50 is a spin-valve type MR element. The MR element 50 has: a magnetized fixed layer 52 with a fixed orientation, a magnetized free layer 54 with an orientation that can change according to the direction of the object's magnetic field, and a gap layer 53 disposed between the magnetized fixed layer 52 and the free layer 54. The MR element 50 can be a TMR (tunneling magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value varies according to the angle between the magnetization direction of the free layer 54 and the magnetization direction of the magnetized fixed layer 52, with the resistance value being the minimum at 0° and the maximum at 180°. In each MR element 50, the free layer 54 has an anisotropic shape with its easy magnetization axis orthogonal to the magnetization direction of the magnetized fixed layer 52. Furthermore, as a unit for setting a predetermined direction for the easily magnetized axis of the free layer 54, a magnet that applies a bias magnetic field to the free layer 54 can also be used.

[0045] The MR element 50 also has an antiferromagnetic layer 51. The antiferromagnetic layer 51, the magnetization fixation layer 52, the gap layer 53, and the free layer 54 are sequentially stacked. The antiferromagnetic layer 51 is made of an antiferromagnetic material and generates exchange coupling with the magnetization fixation layer 52, fixing the magnetization direction of the magnetization fixation layer 52. Alternatively, the magnetization fixation layer 52 can be a so-called self-pinned fixation layer (SFP layer). A self-pinned fixation layer has a stacked ferrite structure consisting of a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer, where two ferromagnetic layers are antiferromagnetically bonded together. When the magnetization fixation layer 52 is a self-pinned fixation layer, the antiferromagnetic layer 51 can be omitted.

[0046] Furthermore, the arrangement of layers 51-54 in MR element 50 can also be consistent with... Figure 7 The configuration shown is reversed from top to bottom.

[0047] exist Figure 3 and Figure 4 In the diagram, solid arrows indicate the magnetization direction of the magnetized fixed layer 52 of the MR element 50. Hollow arrows indicate the magnetization direction of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0048] exist Figure 3In the example shown, the magnetization direction of the magnetization fixing layer 52 in each of the first and third resistor sections R21 and R23 is the W1 direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistor sections R22 and R24 is the -W1 direction. Furthermore, the free layer 54 of each of the plurality of first MR elements 50B has an anisotropic shape, with its easy magnetization axis direction parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistor sections R21 and R22 is the U direction when no target magnetic field is applied to the first MR element 50B. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor sections R23 and R24 is the -U direction.

[0049] exist Figure 4 In the example shown, the magnetization direction of the magnetization fixing layer 52 in each of the first and third resistor sections R31 and R33 is the W2 direction. The magnetization direction of the magnetization fixing layer 52 in each of the second and fourth resistor sections R32 and R34 is the -W2 direction. Furthermore, the free layer 54 of each of the plurality of second MR elements 50C has an anisotropic shape with its easy magnetization axis parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistor sections R31 and R32 is the U direction when no target magnetic field is applied to the second MR element 50C. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistor sections R33 and R34 is the -U direction.

[0050] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layer 54 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C. In this embodiment, the magnetic field generator includes a coil 80 that applies a magnetic field in a predetermined direction to the free layer 54 of each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0051] Furthermore, from the viewpoint of manufacturing precision of the MR element 50, the magnetization direction of the magnetization of the magnetization fixing layer 52 and the direction of the easy magnetization axis of the free layer 54 can be slightly deviated from the aforementioned directions. Alternatively, the magnetization of the magnetization fixing layer 52 can be configured to include a magnetization component with the aforementioned direction as the dominant component. In this case, the magnetization direction of the magnetization fixing layer 52 is the aforementioned direction or approximately the aforementioned direction.

[0052] The following is for reference Figure 5 and Figure 6 The specific structure of magnetic sensor 1 will be described in detail. Figure 6 express Figure 5 A portion of the cross section at the location indicated by line 6-6.

[0053] The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, and 310, multiple lower electrodes 61B and 61C, multiple upper electrodes 62B and 62C, multiple lower coil elements 81, and multiple upper coil elements 82. The upper surface 301a of the substrate 301 is parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301. Furthermore, the coil elements are part of a coil winding.

[0054] An insulating layer 302 is disposed on a substrate 301. A plurality of lower coil elements 81 are disposed on the insulating layer 302. An insulating layer 303 is disposed on the insulating layer 302 around the plurality of lower coil elements 81. Insulating layers 304, 305, and 306 are sequentially stacked on the plurality of lower coil elements 81 and the insulating layer 303.

[0055] Multiple lower electrodes 61B and multiple lower electrodes 61C are disposed on insulating layer 306. Insulating layer 307 is disposed on insulating layer 306 around the multiple lower electrodes 61B and around the multiple lower electrodes 61C. Multiple first MR elements 50B are disposed on the multiple lower electrodes 61B. Multiple second MR elements 50C are disposed on the multiple lower electrodes 61C. Insulating layer 308 is disposed on the multiple lower electrodes 61B, the multiple lower electrodes 61C, and insulating layer 307 around the multiple first MR elements 50B and around the multiple second MR elements 50C. Multiple upper electrodes 62B are disposed on the multiple first MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are disposed on the multiple second MR elements 50C and insulating layer 308. Insulating layer 309 is disposed on insulating layer 308 around the multiple upper electrodes 62B and around the multiple upper electrodes 62C.

[0056] An insulating layer 310 is disposed over a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are disposed over the insulating layer 310. The magnetic sensor 1 may also include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0057] The magnetic sensor 1 includes a support member that supports a plurality of first MR elements 50B and a plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, the support member is specifically formed of an insulating layer 305. Furthermore, in… Figure 5 The diagram shows the insulating layer 305, a plurality of first MR elements 50B, a plurality of second MR elements 50C, and a plurality of upper coil elements 82 among the constituent elements of the magnetic sensor 1.

[0058] The insulating layer 305 has a plurality of convex surfaces 305c extending in a direction (Z direction) away from the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surfaces 305c is such that... Figure 6 The convex surface 305c shown is a semi-cylindrical curved surface formed by moving its curved shape (arch) along a direction parallel to the U direction. Furthermore, multiple convex surfaces 305c are arranged side-by-side at predetermined intervals in a direction parallel to the V direction.

[0059] Each of the plurality of convex surfaces 305c has an upper end portion furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end portions of each of the plurality of convex surfaces 305c extend in a direction parallel to the U direction. Here, focus is placed on any one of the plurality of convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is the surface of the convex surface 305c that is closer to the V direction side than the upper end portion of the convex surface 305c. The second inclined surface 305b is the surface of the convex surface 305c that is closer to the -V direction side than the upper end portion of the convex surface 305c. Figure 5 In the diagram, the boundaries of the first inclined surface 305a and the second inclined surface 305b are represented by dashed lines.

[0060] The upper end of the convex surface 305c can also be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, Figure 5 The dashed line shown represents the upper end of the convex surface 305c.

[0061] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross-section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0062] In this embodiment, since there are multiple convex surfaces 305c, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0063] The insulating layer 305 also has a flat surface 305d surrounding a plurality of convex surfaces 305c. The flat surface 305d is a surface parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes from the flat surface 305d in the Z direction. In addition, in this embodiment, the plurality of convex surfaces 305c are arranged at predetermined intervals. Therefore, a flat surface 305d exists between two adjacent convex surfaces 305c in the V direction.

[0064] The insulating layer 305 includes a plurality of protrusions projecting in the Z direction and a flat portion surrounding the plurality of protrusions. Each of the plurality of protrusions extends in a direction parallel to the U direction and has a convex surface 305c. Furthermore, the plurality of protrusions are arranged side-by-side at predetermined intervals in a direction parallel to the V direction. The thickness (dimension in the Z direction) of the flat portion is substantially constant.

[0065] Furthermore, insulating layer 304 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of insulating layer 305. Insulating layer 306 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of insulating layer 305.

[0066] In this embodiment, specifically, the insulating layer 305 includes a first layer 3051 disposed on the insulating layer 304 and a second layer 3052 disposed on the first layer 3051. The second layer 3052 includes a plurality of mutually separated portions. The insulating layer 306 is disposed on the portion of the upper surface of the first layer 3051 where the second layer 3052 is not disposed and on the upper surface of the second layer 3052. A plurality of first inclined surfaces 305a and a plurality of second inclined surfaces 305b are each formed throughout the first layer 3051 and the second layer 3052.

[0067] Multiple lower electrodes 61B are disposed on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are disposed on multiple second inclined surfaces 305b. As described above, since the first inclined surfaces 305a and 305b are each inclined relative to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and the multiple lower electrodes 61C are also inclined relative to the XY plane. Therefore, it can be said that multiple first MR elements 50B and multiple second MR elements 50C are disposed on inclined surfaces inclined relative to the XY plane. The insulating layer 305 is a component for supporting each of the multiple first MR elements 50B and multiple second MR elements 50C in an inclined manner relative to the XY plane.

[0068] Furthermore, in this embodiment, the first inclined surface 305a is curved. Therefore, the first MR element 50B is bent along the curved surface (first inclined surface 305a). In this embodiment, for ease of explanation, the magnetization direction of the magnetization fixing layer 52 of the first MR element 50B is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 52 of the first MR element 50B, i.e., the W1 direction and the -W1 direction, is also the direction of the tangent extending from the portion of the first inclined surface 305a that is in contact with the vicinity of the first MR element 50B.

[0069] Similarly, in this embodiment, the second inclined surface 305b is curved. Therefore, the second MR element 50C is bent along the curved surface (second inclined surface 305b). In this embodiment, for ease of explanation, the magnetization direction of the magnetization fixing layer 52 of the second MR element 50C is defined as a straight line direction as described above. The magnetization direction of the magnetization fixing layer 52 of the second MR element 50C, i.e., the W2 direction and the -W2 direction, is also the direction of the tangent extending from the portion of the second inclined surface 305b that is in contact with the vicinity of the second MR element 50C.

[0070] like Figure 5 As shown, a plurality of first MR elements 50B are arranged in a parallel configuration along both the U and V directions. On a first inclined surface 305a, the plurality of first MR elements 50B are arranged in a single column. Similarly, a plurality of second MR elements 50C are arranged in a parallel configuration along both the U and V directions. On a second inclined surface 305b, the plurality of second MR elements 50C are arranged in a single column. In this embodiment, the columns of the first MR elements 50B and the columns of the second MR elements 50C are alternately arranged in a direction parallel to the V direction.

[0071] Furthermore, when viewed from the Z direction, an adjacent first MR element 50B and a second MR element 50C can be offset in a direction parallel to the U direction, or they can be perfectly aligned. Additionally, when viewed from the Z direction, two adjacent first MR elements 50B separated by one second MR element 50C can be offset in a direction parallel to the U direction, or they can be perfectly aligned. Furthermore, when viewed from the Z direction, two adjacent second MR elements 50C separated by one first MR element 50B can be offset in a direction parallel to the U direction, or they can be perfectly aligned.

[0072] Multiple first MR elements 50B are connected in series via multiple lower electrodes 61B and multiple upper electrodes 62B. Referring here... Figure 7 The connection method of multiple first MR elements 50B is described in detail. Figure 7 In the diagram, symbol 61 represents the lower electrode corresponding to any MR element 50, and symbol 62 represents the upper electrode corresponding to any MR element 50. For example... Figure 7 As shown, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 along their long sides. MR elements 50 are disposed near both ends of the upper surface of the lower electrode 61 along their long sides. Furthermore, each upper electrode 62 has an elongated shape and is disposed on two adjacent lower electrodes 61 along their long sides, electrically connecting the two adjacent MR elements 50 to each other.

[0073] Although not shown, one MR element 50 located at one end of a column of multiple MR elements 50 arranged side-by-side is connected to another MR element 50 located at one end of a column of multiple other MR elements 50 adjacent to each other in a direction intersecting the long side direction of the lower electrode 61. These two MR elements 50 are interconnected via an electrode not shown. The electrode not shown could also be an electrode connecting the lower surfaces or upper surfaces of the two MR elements 50 to each other.

[0074] exist Figure 7 In the case where the MR element 50 shown is the first MR element 50B, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61B. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62B. Furthermore, in this case, the long side direction of the lower electrode 61 becomes parallel to the U direction.

[0075] Similarly, multiple second MR elements 50C are connected in series via multiple lower electrodes 61C and multiple upper electrodes 62C. The description of the connection method for the multiple first MR elements 50B also applies to the connection method for the multiple second MR elements 50C. Figure 7 In the case where the MR element 50 shown is the second MR element 50C, Figure 7 The lower electrode 61 shown corresponds to the lower electrode 61C. Figure 7 The upper electrode 62 shown corresponds to the upper electrode 62C. Furthermore, in this case, the long side direction of the lower electrode 61 becomes parallel to the U direction.

[0076] Furthermore, in this embodiment, a laminated film comprising an antiferromagnetic layer 51, a magnetization fixing layer 52, a gap layer 53, and a free layer 54 is described as the MR element 50. However, an element comprising this laminated film, a lower electrode 61, and an upper electrode 62 may also be used as the MR element of this embodiment. The laminated film comprises multiple magnetic films. The lower electrode 61 is a non-magnetic metal layer disposed between the convex surface 305c and the multiple magnetic films. The MR element may also comprise multiple laminated films, multiple lower electrodes 61, and multiple upper electrodes 62.

[0077] Each of the plurality of upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the plurality of upper coil elements 82 are arranged side-by-side along the X direction. In this embodiment, in particular, when viewed from the Z direction, two upper coil elements 82 overlap on each of the plurality of first MR elements 50B and the plurality of second MR elements 50C.

[0078] Multiple lower coil elements 81 each extend in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged side-by-side along the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82. Figure 5 and Figure 6 In the example shown, the X-direction dimension of each of the plurality of lower coil elements 81 is smaller than the X-direction dimension of each of the plurality of upper coil elements 82. Furthermore, the spacing between two adjacent lower coil elements 81 in the X-direction is smaller than the spacing between two adjacent upper coil elements 82 in the X-direction.

[0079] exist Figure 5 and Figure 6 In the example shown, multiple lower coil elements 81 and multiple upper coil elements 82 are electrically connected to form a coil 80 that applies a magnetic field parallel to the X-direction to the free layers 54 of each of the multiple first MR elements 50B and the multiple second MR elements 50C. Alternatively, the coil 80 may be configured to apply an X-direction magnetic field to the free layers 54 in the first and second resistor sections R21, R22 of the first detection circuit 20 and the first and second resistor sections R31, R32 of the second detection circuit 30, and to apply a -X-direction magnetic field to the free layers 54 in the third and fourth resistor sections R23, R24 of the first detection circuit 20 and the third and fourth resistor sections R33, R34 of the second detection circuit 30. Furthermore, the coil 80 may also be controlled by a processor 40.

[0080] Next, the first and second detection signals will be explained. First, refer to... Figure 3 The first detection signal is explained. When the intensity of the component parallel to the W1 direction of the object's magnetic field changes, the resistance values ​​of the resistors R21 to R24 in the first detection circuit 20 change in the following manner: the resistance values ​​of resistors R21 and R23 increase, and the resistance values ​​of resistors R22 and R24 decrease; or the resistance values ​​of resistors R21 and R23 decrease, and the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The first detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the first detection signal S21, and to generate a signal corresponding to the potential of the signal output terminal E22 as the first detection signal S22.

[0081] Next, refer to Figure 4The second detection signal is explained. When the intensity of the component of the object's magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 in the second detection circuit 30 change in the following manner: the resistance values ​​of resistors R31 and R33 increase, and the resistance values ​​of resistors R32 and R34 decrease; or the resistance values ​​of resistors R31 and R33 decrease, and the resistance values ​​of resistors R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The second detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the second detection signal S31, and to generate a signal corresponding to the potential of the signal output terminal E32 as the second detection signal S32.

[0082] Next, the operation of the processor 40 will be explained. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S21 and S22 and the second detection signals S31 and S32. The first detection value is the detection value corresponding to the component of the object's magnetic field parallel to the V direction. The second detection value is the detection value corresponding to the component of the object's magnetic field parallel to the Z direction. Hereinafter, the first detection value will be represented by the symbol Sv, and the second detection value will be represented by the symbol Sz.

[0083] Processor 40 generates the first and second detection values ​​Sv and Sz as follows: Processor 40 first generates value S1 by performing an operation that includes calculating the difference S21-S22 between the first detection signal S21 and the first detection signal S22, and generates value S2 by performing an operation that includes calculating the difference S31-S32 between the second detection signal S31 and the second detection signal S32. Then, processor 40 calculates values ​​S3 and S4 using the following formulas (1) and (2).

[0084] S3=(S2+S1) / (2cosα)…(1)

[0085] S4=(S2-S1) / (2sinα)…(2)

[0086] The first detection value Sv can be the value S3 itself, or it can be a value that has undergone specified corrections such as gain adjustment and offset adjustment on the value S3. Similarly, the second detection value Sz can be the value S4 itself, or it can be a value that has undergone specified corrections such as gain adjustment and offset adjustment on the value S4.

[0087] Next, refer to Figures 8-11 The manufacturing method of the magnetic sensor 1 of this embodiment will be described. Figures 8-11 This represents the laminated structure in the manufacturing process of magnetic sensor 1. In the manufacturing method of magnetic sensor 1, firstly, as shown... Figure 8As shown, an insulating layer 302 is formed on a substrate 301. Next, a plurality of lower coil elements 81, a connecting layer 83 made of conductive material, and an insulating layer 303 are formed on the insulating layer 302. Next, an insulating layer 304 is formed on the plurality of lower coil elements 81, the connecting layer 83, and the insulating layer 303.

[0088] Figure 9 This indicates the next step. In this step, the insulating layer 304 is first selectively etched to form an opening on the insulating layer 304 that exposes the upper surface of the connection layer 83. Next, a metal film 84 made of a conductive material is formed on the upper surface of the connection layer 83. Next, a connection layer 85 made of a conductive material is formed on the metal film 84. Next, a first layer 3051 of the insulating layer 305 is formed around the connection layer 85.

[0089] Figure 10 This indicates the next step. In this step, firstly, a metal film 86 made of conductive material is formed on the upper surface of the connecting layer 85. Next, a second layer 3052 of the insulating layer 305 is formed on the metal film 86 and the first layer 3051 of the insulating layer 305.

[0090] Figure 11 This indicates the next step. In this step, the first layer 3051 and the second layer 3052 are etched in such a way that multiple convex surfaces 305c are formed on the insulating layer 305. The multiple convex surfaces 305c are formed, for example, by forming multiple etching masks on the second layer 3052 and then removing the multiple etching masks to etch the first layer 3051, the second layer 3052, and the multiple etching masks. The multiple etching masks have shapes corresponding to the multiple convex surfaces 305c. The portion of the first layer 3051 not covered by the multiple etching masks is called a flat surface 305d. In this etching, the metal film 86 functions as an etch barrier layer to protect the interconnect layer 85.

[0091] The connecting layer 85 is a structure embedded in the first layer 3051. The connecting layer 85 has an end face, i.e., an upper surface, that is, the end face farthest from the upper surface 301a of the substrate 301. The end face (upper surface) of the connecting layer 85 is positioned at substantially the same location as the interface between the first layer 3051 and the second layer 3052 in a direction perpendicular to the upper surface 301a of the substrate 301, i.e., in a direction parallel to the Z direction.

[0092] The following is for reference Figure 6The process following the etching of the first layer 3051 and the second layer 3052 will be described. First, an insulating layer 306 is formed on the first layer 3051 and the second layer 3052. Next, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of first MR elements 50B, a plurality of second MR elements 50C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and insulating layers 307 to 309 are formed on the insulating layer 306.

[0093] Next, an insulating layer 310 is formed over the plurality of upper electrodes 62B, the plurality of upper electrodes 62C, and the insulating layer 309. Then, a plurality of upper coil elements 82 are formed over the insulating layer 310. Thus, the magnetic sensor 1 is completed.

[0094] The connecting layers 83 and 85 can also be used as connecting portions for connecting multiple lower coil elements 81 and multiple upper coil elements 82. In this case, for example, after forming the insulating layer 310 and before forming the multiple upper coil elements 82, the insulating layers 306-310 can be selectively etched to form an opening that exposes the metal film 86, and a connecting layer (not shown) made of conductive material can be formed within this opening. The multiple upper coil elements 82 are formed to be connected to the connecting layer (not shown) after the forming of the connecting layer (not shown).

[0095] Alternatively, the metal film 86 can also be used as any electrode pad (e.g., the electrode pad of the coil 80). In this case, for example, a photoresist layer covering the metal film 86 can be formed after etching the first layer 3051 and the second layer 3052 and before forming the insulating layer 306. The photoresist layer is removed, for example, after forming the upper coil element 82.

[0096] Next, the structural features of the magnetic sensor 1 according to this embodiment will be described. The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, a support member disposed on the substrate 301, a first MR element 50B, and a second MR element 50C. In this embodiment, in particular, the insulating layer 305 corresponds to the support member. A plurality of lower coil elements 81 and insulating layers 302 to 304 are located between the substrate 301 and the insulating layer 305. The insulating layer 305 has a first inclined surface 305a and a second inclined surface 305b.

[0097] The first and second MR elements 50B and 50C each comprise at least two magnetic films, namely a magnetized fixed layer 52 and a free layer 54. The two magnetic films of the first MR element 50B constitute a part (main part) of the first MR element 50B. The two magnetic films of the second MR element 50C constitute a part (main part) of the second MR element 50C. Hereinafter, the two magnetic films are referred to as functional layers. The functional layer of the first MR element 50B is disposed on the first inclined surface 305a. The functional layer of the second MR element 50C is disposed on the second inclined surface 305b. Furthermore, the insulating layer 305 comprises a first layer 3051 and a second layer 3052 disposed on the first layer 3051. The first layer 3051 and the second layer 3052 are each formed from an insulating material such as SiO2.

[0098] Below, refer to Figure 12 The features of the first inclined surface 305a, the second inclined surface 305b, the first layer 3051, and the second layer 3052 are described in detail. Figure 12 This is an explanatory diagram illustrating the shape of the supporting component, namely the insulating layer 305.

[0099] The first inclined surface 305a and the second inclined surface 305b are each formed throughout the first layer 3051 and the second layer 3052. Furthermore, the first inclined surface 305a and the second inclined surface 305b face different directions. In a convex surface 305c, the first inclined surface 305a and the second inclined surface 305b can also be symmetrical about an imaginary UZ plane perpendicular to the upper surface 301a of the substrate 301.

[0100] From the viewpoint of minimizing the height of the magnetic sensor 1, the dimensions of the first inclined surface 305a and the second inclined surface 305b in the direction perpendicular to the upper surface 301a of the substrate 301, that is, in the direction parallel to the Z direction, are each in the range of 1.4 μm to 3.0 μm.

[0101] The first inclined surface 305a has a first edge 305a1 that is closest to the upper surface 301a of the substrate 301 and a second edge 305a2 that is farthest from the upper surface 301a of the substrate 301. The first edge 305a1 is located in the first layer 3051. The second edge 305a2 is located in the second layer 3052.

[0102] The second inclined surface 305b has a first edge 305b1 closest to the upper surface 301a of the substrate 301 and a second edge 305b2 furthest from the upper surface 301a of the substrate 301. The first edge 305b1 is located in the first layer 3051. The second edge 305b2 is located in the second layer 3052. Furthermore, in Figure 12 In the example shown, the second edge 305b2 of the second inclined surface 305b coincides with the second edge 305a2 of the first inclined surface 305a.

[0103] The first layer 3051 has a lower end portion 3051a closest to the upper surface 301a of the substrate 301 and an upper end portion 3051b furthest from the upper surface 301a of the substrate 301. The second layer 3052 has a lower end portion 3052a closest to the upper surface 301a of the substrate 301 and an upper end portion 3052b furthest from the upper surface 301a of the substrate 301. The distance from the interface between the first layer 3051 and the second layer 3052 to the lower end portion 3051a of the first layer 3051 is less than the distance from the interface between the first layer 3051 and the second layer 3052 to the upper end portion 3052b of the second layer 3052.

[0104] The first edge 305a1 of the first inclined surface 305a is disposed between the lower end 3051a and the upper end 3051b of the first layer 3051 in a direction perpendicular to the upper surface 301a of the substrate 301, i.e., parallel to the Z direction. Furthermore, the first edge 305b1 of the second inclined surface 305b is disposed between the lower end 3051a and the upper end 3051b of the first layer 3051 in a direction parallel to the Z direction.

[0105] The functional layer of the first MR element 50B is disposed along the surface of the second layer 3052, but not along the surface of the first layer 3051. Similarly, the functional layer of the second MR element 50C is disposed along the surface of the second layer 3052, but not along the surface of the first layer 3051.

[0106] In this embodiment, the first inclined surface 305a is a generally smooth curved surface. There are no steps at the boundary between the first layer 3051 and the second layer 3052 in the first inclined surface 305a. Similarly, in this embodiment, the second inclined surface 305b is a generally smooth curved surface. There are no steps at the boundary between the first layer 3051 and the second layer 3052 in the second inclined surface 305b.

[0107] Next, refer to Figure 13 The features of the convex surface 305c of the supporting component, namely the insulating layer 305, will be described. Figure 13 This is an explanatory diagram illustrating the shape of the convex surface 305c. The insulating layer 305 has a convex surface 305c. The convex surface 305c extends in a direction away from the upper surface 301a of the substrate 301. At least a portion of the convex surface 305c is inclined relative to the upper surface 301a of the substrate 301. In this embodiment, in particular, the convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b.

[0108] The convex surface 305c has an upper end portion E1 that is furthest from the upper surface 301a of the substrate 301. The upper end portion E1 can also be... Figure 12The second end edge 305a2 of the first inclined surface 305a and the second end edge 305b2 of the second inclined surface 305b are aligned.

[0109] The dimensions of the convex surface 305c in the direction perpendicular to the upper surface 301a of the substrate 301, i.e., in the direction parallel to the Z direction, are the same as the dimensions of the first and second inclined surfaces 305a and 305b in the direction parallel to the Z direction. That is, the dimension of the convex surface 305c in the direction parallel to the Z direction is in the range of 1.4 μm to 3.0 μm. In addition, the dimension of the convex surface 305c in the direction parallel to the V direction is, for example, 3 μm to 16 μm.

[0110] The convex surface 305c includes a first curved surface portion 305c1, a second curved surface portion 305c2, and a third curved surface portion 305c3, each containing an upper end point E1. The second curved surface portion 305c2 is continuous with the first curved surface portion 305c1 on the V-direction side and is located between the first curved surface portion 305c1 and the upper surface 301a of the substrate 301 in a direction perpendicular to the upper surface 301a of the substrate 301. The third curved surface portion 305c3 is continuous with the first curved surface portion 305c1 on the opposite side from the second curved surface portion 305c2, i.e., on the -V-direction side of the first curved surface portion 305c1, and is located between the first curved surface portion 305c1 and the upper surface 301a of the substrate 301 in a direction perpendicular to the upper surface 301a of the substrate 301. Furthermore, both the second curved surface portion 305c2 and the third curved surface portion 305c3 are continuous with the flat surface 305d.

[0111] The first curved surface portion 305c1 is a curved surface that protrudes in a direction away from the upper surface 301a of the substrate 301. The second curved surface portion 305c2 and the third curved surface portion 305c3 are each curved surfaces that protrude in a direction close to the upper surface 301a of the substrate 301.

[0112] Here, the section perpendicular to the upper surface 301a of the substrate 301 and parallel to the VZ plane is called the reference section. The first curved surface portion 305c1 can be approximated as a circular arc on the reference section. Figure 13 In the diagram, R1 represents the radius of curvature of the first curved surface portion 305c1 in the reference section, that is, the radius of curvature of the arc that approximates the entire first curved surface portion 305c1. The radius of curvature R1 is between 4.25μm and 5.45μm.

[0113] Similarly, the second curved surface portion 305c2 and the third curved surface portion 305c3 can be approximated as circular arcs on the reference section. Figure 13In the diagram, R2 represents the radius of curvature of the second curved surface portion 305c2 in the reference section, which is the radius of curvature of the arc approximating the second curved surface portion 305c2. R3 represents the radius of curvature of the third curved surface portion 305c3 in the reference section, which is the radius of curvature of the arc approximating the third curved surface portion 305c3. Both radii of curvature R2 and R3 are smaller than the radius of curvature R1 and are greater than or equal to 0.3 μm.

[0114] Here, the shape of the convex surface 305c in the reference section is considered as a function Z of the position on an imaginary straight line parallel to both the reference section and the upper surface 301a of the substrate 301, respectively. This imaginary straight line is parallel to the V direction. Hereinafter, this imaginary straight line is called the V-axis, and the position on the V-axis is represented by the symbol v. The function Z is a function of v as an independent variable. The value of the function Z corresponds to the position of the convex surface 305c in a direction parallel to the Z direction. Figure 14 A graph representing the function Z. In Figure 14 In the diagram, the horizontal axis represents the position on the V-axis, and the vertical axis represents the value of the function Z. Figure 14 Essentially, it represents the shape of the convex surface 305c in the reference section.

[0115] In addition, Figure 14 In this context, the position on the V-axis corresponding to the upper end E1 of the convex surface 305c is set as the origin (0 μm) on the horizontal axis. Positive values ​​represent positions closer to the V-direction than the origin, and negative values ​​represent positions closer to the -V-direction than the origin. Additionally, in... Figure 14 In this case, the position of the flat surface 305d in the direction parallel to the Z direction is set to 0μm.

[0116] Figure 15 This represents the graph of the first derivative Z'(dZ / dv) obtained by differentiating the function Z with respect to the variable v. Figure 15 In the diagram, the horizontal axis represents the position on the V-axis, and the vertical axis represents the value of the first derivative Z'. Additionally, Figure 16 This represents the second derivative Z(d) obtained by taking the second derivative of the function Z with respect to the variable v. 2 Z / dv 2 The curve graph. Figure 15 In the diagram, the horizontal axis represents the position on the V-axis, and the vertical axis represents the value of the second derivative Z”.

[0117] The two positions where the second derivative Z” is 0 represent the positions on the V-axis corresponding to the boundaries of the first surface portion 305c1 and the second surface portion 305c2, and the positions on the V-axis corresponding to the boundaries of the first surface portion 305c1 and the third surface portion 305c3. Therefore, by referring to Figure 16 It can determine the positions of the first to third curved surface portions 305c1 to 305c3. Figures 14-16The approximate ranges of the first to third curved surface portions 305c1 to 305c3 are shown in the figure.

[0118] like Figure 16 As shown, at the position on the V-axis corresponding to the first surface portion 305c1, the value of the second derivative function Z” is less than 0. In addition, at the positions on the V-axis corresponding to the second surface portion 305c2 and the second surface portion 305c3, the values ​​of the second derivative function Z” are positive.

[0119] Here, as Figure 16 As shown, the first curved surface portion 305c1 is divided into a first part c11, a second part c12, and a third part c13. The first part c11 includes the upper end portion E1 of the convex surface 305c. The second part c12 is located away from the upper end portion E1 of the convex surface 305c and is continuous with the first part c11 on the V-direction side. The third part c13 is located away from the upper end portion E1 of the convex surface 305c and is continuous with the first part c11 on the -V-direction side. The second part c12 is located below the first MR element 50B (on the -Z-direction side). The third part c13 is located below the second MR element 50C (on the -Z-direction side). The first and second MR elements 50B and 50C are not located above the first part c11 (on the Z-direction side). Figure 16 The approximate ranges of the first to third parts, c11 to c13, are shown in the figure.

[0120] The average absolute value of the second derivative Z” of the function Z corresponding to the first part c11 is less than the average absolute value of the second derivative Z” of the function Z corresponding to the second part c12. Similarly, the average absolute value of the second derivative Z” of the function Z corresponding to the first part c11 is less than the average absolute value of the second derivative Z” of the function Z corresponding to the third part c13.

[0121] Furthermore, in this embodiment, as one end of the first surface portion 305c1 in the direction parallel to the V direction approaches the other end of the first surface portion 305c1 in the direction parallel to the V direction, the value of the first derivative Z' of the function Z corresponding to the first surface portion 305c1 decreases or increases. That is, as the end of the first surface portion 305c1 in the -V direction approaches the end of the first surface portion 305c1 in the V direction, the value of the first derivative Z' decreases. Alternatively, as the end of the first surface portion 305c1 in the V direction approaches the end of the first surface portion 305c1 in the -V direction, the value of the first derivative Z' increases.

[0122] Next, the function and effects of the magnetic sensor 1 of this embodiment will be explained. In this embodiment, the support member, i.e., the insulating layer 305, includes a first layer 3051 and a second layer 3052, and has first and second inclined surfaces 305a and 305b formed throughout the first layer 3051 and the second layer 3052, respectively. Here, we consider embedding a structure made of metallic material in the support member of a comparative example that consists of only one insulating layer. In the support member of the comparative example, when an inclined surface is formed on the support member by etching, the structure protrudes significantly from the surface formed by etching due to the different etching rates. In this case, for example, due to the influence of the shadow of the structure, it becomes difficult to pattern a portion of the electrode or MR element formed on the inclined surface.

[0123] In contrast, in this embodiment, for example, when the structure is embedded in the first layer 3051 but not in the second layer 3052, a first inclined surface 305a and a second inclined surface 305b can be formed on the insulating layer 305. Therefore, according to this embodiment, the amount of protrusion of the structure can be suppressed compared to the support member of the comparative example.

[0124] Furthermore, the insulating materials of the first layer 3051 and the second layer 3052 can be the same or different. Additionally, the film-forming conditions of the first layer 3051 and the second layer 3052 can be the same or different. For example, by making at least one of the insulating material and film-forming conditions different in the first layer 3051 and the second layer 3052, the shape of a portion of the convex surface 305c formed in the first layer 3051 and the shape of another portion of the convex surface 305c formed in the second layer 3052 can be made different.

[0125] Furthermore, in this embodiment, the convex surface 305c respectively includes first to third curved surface portions 305c1 to 305c3 having the aforementioned shapes. If the second and third curved surface portions 305c2 and 305c3 were not present, the flat surface 305d and the first curved surface portion 305c1 would be discontinuous at the boundary between the flat surface 305d and the first curved surface portion 305c1. Therefore, the surface of the insulating layer 305 would not be a smooth surface. In contrast, in this embodiment, by including the second and third curved surface portions 305c2 and 305c3 in the convex surface 305c, the surface of the insulating layer 305 can be made smooth. Thus, according to this embodiment, the generation of cracks in the insulating layer 305 near the boundary between the convex surface 305c and the flat surface 305d can be suppressed.

[0126] As described above, the radius of curvature R1 of the first curved surface portion 305c1 of the convex surface 305c is different from the radius of curvature R2 of the second curved surface portion 305c2 and the radius of curvature R3 of the third curved surface portion 305c3 of the convex surface 305c. At least a portion of the first curved surface portion 305c1 is formed in the second layer 3052. At least a portion of each of the second curved surface portion 305c2 and the third curved surface portions 305c2 and 305c3 is formed in the first layer 3051. According to this embodiment, for example, by making at least one of the insulating material and the film formation conditions different in the first layer 3051 and the second layer 3052, the etching rate of the first layer 3051 and the etching rate of the second layer 3052 can be adjusted respectively. Therefore, according to this embodiment, it is easy to set the radius of curvature R1 to a preferred range while adjusting the radii of curvature R2 and R3 to a preferred range.

[0127] In this embodiment, in particular, by keeping the radii of curvature R2 and R3 within the above-mentioned range, compared to the case where there are no second and third curved surface portions 305c2 and 305c3 and the radii of curvature are so small that the boundary between the convex surface 305c and the flat surface 305d is considered discontinuous, it is possible to suppress the generation of cracks on the insulating layer 305 near the boundary between the convex surface 305c and the flat surface 305d.

[0128] In addition, from Figure 16 As can be seen, in this embodiment, the value of the second derivative Z” of the function Z corresponding to the first curved surface portion 305c1 is not constant. Therefore, strictly speaking, the radius of curvature R1 varies depending on the position on the V-axis. In particular, in this embodiment, the average absolute value of the second derivative Z” of the function Z corresponding to the first part c11 of the first curved surface portion 305c1 is less than the average absolute value of the second derivative Z” of the function Z corresponding to the second part c12 of the first curved surface portion 305c1, and the average absolute value of the second derivative Z” of the function Z corresponding to the third part c13 of the first curved surface portion 305c1. Therefore, in this embodiment, the radius of curvature R1 in the first part c11 is greater than the radius of curvature R1 in the second part c12 and the radius of curvature R1 in the third part c13. Thus, according to this embodiment, compared with the case where the radius of curvature R1 is constant regardless of the position on the V-axis, the size of the convex surface 305c in the direction parallel to the Z direction can be reduced, that is, the height of the convex surface 305c can be reduced.

[0129] Furthermore, in this embodiment, the size of the convex surface 305c in the direction parallel to the Z direction is preferably in the range of 1.4 μm to 3.0 μm. According to the exemplary embodiment, by setting the size of the convex surface 305c to 1.4 μm or more, the tilt of each of the first tilted surface 305a and the second tilted surface 305b can be increased, thereby improving the sensitivity of the magnetic sensor 1 relative to the component of the object magnetic field in the direction parallel to the Z direction. As a result, according to the exemplary embodiment, the second detection value Sz can be generated with high precision. In addition, according to the exemplary embodiment, by setting the size of the convex surface 305c to 3.0 μm or less, during the manufacturing process of the magnetic sensor 1, a photoresist mask composed of a photoresist layer can be formed with high precision on the first tilted surface 305a and the second tilted surface 305b.

[0130] Furthermore, the present invention is not limited to the embodiments described above, and various modifications can be made. For example, the magnetic detection element is not limited to MR elements, but can also be a magnetic field detection element other than MR elements such as Hall elements.

[0131] Alternatively, the support member of the present invention may also be composed of insulating layer 305 and insulating layer 306. In this case, the support member has multiple convex surfaces and flat surfaces. The multiple convex surfaces and flat surfaces are formed by the upper surface of insulating layer 306. The upper surface of insulating layer 306 is similar in shape or substantially similar in shape to the upper surface of insulating layer 305. Therefore, the multiple convex surfaces formed by the upper surface of insulating layer 306 are similar in shape or substantially similar in shape to the multiple convex surfaces 305c of insulating layer 305. The description of the shape and arrangement of the multiple convex surfaces 305c, in addition to the description related to the first layer 3051 and the second layer 3052, also applies to the multiple convex surfaces formed by the upper surface of insulating layer 306. Specifically, the description of the dimensions of convex surface 305c, the description of the radii of curvature R1 to R3, and the description of the function Z, the first derivative Z', and the second derivative Z” also apply to the multiple convex surfaces formed by the upper surface of insulating layer 306.

[0132] Alternatively, the magnetic sensor 1 may also include a third detection circuit configured to detect a component of the magnetic field of the object in a direction parallel to the XY plane, and to generate at least one third detection signal corresponding to that component. In this case, the processor 40 may also be configured to generate a detection value corresponding to the component of the magnetic field of the object parallel to the U direction based on at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 20 and 30, or it may be contained in a different chip than the first and second detection circuits 20 and 30.

[0133] Furthermore, the sensor element of the present invention is not limited to a magnetic detection element, but can also be a sensor element configured such that its physical properties change according to a predetermined physical quantity. The predetermined physical quantity is not limited to a magnetic field, but can include quantities representing the state of any object that can be detected by the sensor element, such as electric fields, temperature, displacement, and force. As described in the above embodiment, if the magnetic detection element is replaced with a sensor element, it can also be applied to sensors other than magnetic sensors that have sensor elements other than magnetic detection elements. In this case, the functional layer can be at least a portion constituting the sensor element, or it can be a portion whose physical properties change according to a predetermined physical quantity. Additionally, in this case, the metal layer can be any wiring layer.

[0134] As described above, the sensor of the present invention is configured to detect a predetermined physical quantity. The sensor of the present invention includes a substrate having an upper surface, a support member disposed on the substrate, and a sensor element configured such that its physical properties change according to the predetermined physical quantity. The support member includes a first layer and a second layer disposed on the first layer, and has at least one inclined surface extending across the first and second layers. The sensor element includes a functional layer constituting at least a portion of the sensor element. The functional layer is disposed on at least one inclined surface.

[0135] In the sensor of the present invention, at least one inclined surface may also have a first edge closest to the upper surface of the substrate and a second edge farthest from the upper surface of the substrate. The first edge may also be located in a first layer. The second edge may also be located in a second layer. The first layer may also have a lower end closest to the upper surface of the substrate and an upper end farthest from the upper surface of the substrate. The first edge may also be disposed between the lower end and the upper end of the first layer in a direction perpendicular to the upper surface of the substrate. The functional layer is disposed along the surface of the second layer, but may not be disposed along the surface of the first layer. There may also be no step at the boundary between the first layer and the second layer in at least one inclined surface.

[0136] Furthermore, in the sensor of the present invention, at least one inclined surface may also comprise two inclined surfaces facing different directions. The two inclined surfaces may also be symmetrical about an imaginary plane perpendicular to the upper surface of the substrate.

[0137] Furthermore, in the sensor of the present invention, the first layer and the second layer may each have a lower end closest to the upper surface of the substrate and an upper end furthest from the upper surface of the substrate. The distance from the interface between the first layer and the second layer to the lower end of the first layer may also be less than the distance from the interface between the first layer and the second layer to the upper end of the second layer.

[0138] Furthermore, in the sensor of the present invention, the size of at least one inclined surface in the direction perpendicular to the upper surface of the substrate is in the range of 1.4 μm to 3.0 μm.

[0139] Furthermore, in the sensor of the present invention, at least one inclined surface may also be an overall smooth curved surface. In this case, the support member may also have a convex surface extending away from the upper surface of the substrate and including at least one inclined surface. The convex surface may also have an upper end portion farthest from the upper surface of the substrate. The convex surface may also include a first curved surface portion including the upper end portion of the convex surface, and a second curved surface portion continuous with the first curved surface portion and located between the first curved surface portion and the upper surface of the substrate in a direction perpendicular to the upper surface of the substrate. The first curved surface portion may also be a curved surface convex in a direction away from the upper surface of the substrate. The second curved surface portion may also be a curved surface convex in a direction close to the upper surface of the substrate. The radius of curvature of the second curved surface portion in a cross section perpendicular to the upper surface of the substrate may also be smaller than the radius of curvature of the first curved surface portion in a cross section perpendicular to the upper surface of the substrate and is 0.3 μm or more. The radius of curvature of the first curved surface portion in a cross section perpendicular to the upper surface of the substrate is 4.25 μm or more and 5.45 μm or less.

[0140] Furthermore, in the sensor of the present invention, when at least one inclined surface is an overall smooth curved surface, the support member may also have a convex surface extending in a direction away from the upper surface of the substrate and including at least one inclined surface. The convex surface may also have an upper end portion furthest from the upper surface of the substrate, and a curved surface portion including the upper end portion of the convex surface and protruding in a direction away from the upper surface of the substrate. The curved surface portion may also include a first portion including the upper end portion of the convex surface, and a second portion continuous with the first portion at a position away from the upper end portion of the convex surface. When the shape of the convex surface in a cross-section perpendicular to the upper surface of the substrate is considered as a function Z of position on an imaginary straight line parallel to both the cross-section and the upper surface of the substrate, the average absolute value of the second derivative Z” of the function Z corresponding to the first portion may be less than the average absolute value of the second derivative Z” of the function Z corresponding to the second portion. The value of the second derivative Z” of the function Z corresponding to the curved surface portion may also be less than 0.

[0141] In addition, in the sensor of the present invention, the first layer and the second layer may each be made of insulating material.

[0142] Furthermore, the sensor of the present invention may also include a structure embedded in the first layer. This structure may also have an end face furthest from the upper surface of the substrate. The end face of the structure may also be arranged in a direction perpendicular to the upper surface of the substrate at a position substantially the same as the interface between the first and second layers.

[0143] Furthermore, in the sensor of the present invention, the defined physical quantity may also be at least one of the direction and intensity of the object's magnetic field. The sensor element may also be a magnetic detection element configured to detect changes in at least one of the direction and intensity of the object's magnetic field. The magnetic detection element may also be a magnetoresistive element. The functional layer may also include multiple magnetic films.

[0144] Based on the above description, it can be seen that various methods and variations of the present invention can be implemented. Therefore, within the equivalent scope of the claims, the present invention can be implemented even in forms other than the preferred form described above.

Claims

1. A sensor configured to detect a specified physical quantity, characterized in that, have: A substrate having an upper surface; A support component disposed on the substrate; The sensor element is configured such that its physical properties change according to the specified physical quantity; Multiple coil elements constitute a coil. The support member comprises a first layer and a second layer disposed on the first layer, and has at least one inclined surface extending across the first layer and the second layer. The sensor element includes a functional layer that constitutes at least a portion of the sensor element. The functional layer is disposed above the at least one inclined surface and along the surface of the second layer, but not along the surface of the first layer. The support member further has a convex surface extending in a direction away from the upper surface of the substrate and including the at least one inclined surface, and a flat surface existing around the convex surface. The first layer has a portion of the flat surface and the at least one inclined surface. The second layer has another portion of the at least one inclined surface. The plurality of coil elements are disposed between the substrate and the first layer. There is no interface between the first layer and the second layer between the plurality of coil elements and the flat surface, but there is an interface between the first layer and the second layer between the plurality of coil elements and the other portion of the at least one inclined surface.

2. The sensor according to claim 1, characterized in that, The at least one inclined surface has a first end edge closest to the upper surface of the substrate and a second end edge farthest from the upper surface of the substrate. The first edge is located in the first layer. The second end edge is located in the second layer.

3. The sensor according to claim 2, characterized in that, The first layer has a lower end portion closest to the upper surface of the substrate and an upper end portion farthest from the upper surface of the substrate. The first end edge is disposed between the lower end of the first layer and the upper end of the first layer in a direction perpendicular to the upper surface of the substrate.

4. The sensor according to claim 2, characterized in that, There are no steps at the boundary between the first and second layers on the at least one inclined surface.

5. The sensor according to claim 1, characterized in that, The at least one inclined surface comprises two inclined surfaces facing different directions.

6. The sensor according to claim 5, characterized in that, The two inclined surfaces are symmetrical about an imaginary plane perpendicular to the upper surface of the substrate.

7. The sensor according to claim 1, characterized in that, The first layer and the second layer each have a lower end portion closest to the upper surface of the substrate and an upper end portion farthest from the upper surface of the substrate. The distance from the interface between the first layer and the second layer to the lower end of the first layer is smaller than the distance from the interface between the first layer and the second layer to the upper end of the second layer.

8. The sensor according to claim 1, characterized in that, The size of the at least one inclined surface in the direction perpendicular to the upper surface of the substrate is in the range of 1.4 μm to 3.0 μm.

9. The sensor according to claim 1, characterized in that, The at least one inclined surface is a generally smooth curved surface.

10. The sensor according to claim 9, characterized in that, The convex surface has an upper end portion that is furthest from the upper surface of the substrate. The convex surface includes a first curved surface portion containing the upper end of the convex surface, and a second curved surface portion continuous with the first curved surface portion and located between the first curved surface portion and the upper surface of the substrate in a direction perpendicular to the upper surface of the substrate. The first curved surface portion is a curved surface that protrudes in a direction away from the upper surface of the substrate. The second curved surface portion is a curved surface that protrudes in a direction close to the upper surface of the substrate. The radius of curvature of the second curved surface portion in the cross section perpendicular to the upper surface of the substrate is smaller than the radius of curvature of the first curved surface portion in the cross section perpendicular to the upper surface of the substrate and is greater than or equal to 0.3 μm.

11. The sensor according to claim 10, characterized in that, The radius of curvature of the first curved surface portion in a cross section perpendicular to the upper surface of the substrate is 4.25 μm or more and 5.45 μm or less.

12. The sensor according to claim 9, characterized in that, The convex surface has an upper end portion furthest from the upper surface of the substrate, and includes a curved portion that includes the upper end portion of the convex surface and protrudes in a direction away from the upper surface of the substrate. The curved surface portion includes a first portion comprising the upper end portion containing the convex surface, and a second portion that is continuous with the first portion at a position away from the upper end portion of the convex surface. When the shape of the convex surface in a cross section perpendicular to the upper surface of the substrate is considered as a function Z with the position on an imaginary straight line parallel to both the cross section and the upper surface of the substrate as variables, the average absolute value of the second derivative Z'' of the function Z corresponding to the first part is less than the average absolute value of the second derivative Z'' of the function Z corresponding to the second part.

13. The sensor according to claim 12, characterized in that, The value of the second derivative Z'' of the function Z corresponding to the surface portion is less than or equal to 0.

14. The sensor according to claim 1, characterized in that, The first layer and the second layer are each composed of insulating materials. By making at least one of the insulating material and film-forming conditions different in the first layer and the second layer, the shape of a portion of the convex surface formed in the first layer and the shape of another portion of the convex surface formed in the second layer are different from each other.

15. The sensor according to claim 1, characterized in that, It also has structures embedded in the first layer. The structure has an end face furthest from the upper surface of the substrate. The end face of the structure is positioned at substantially the same location as the interface between the first layer and the second layer in a direction perpendicular to the upper surface of the substrate.

16. The sensor according to claim 1, characterized in that, The specified physical quantity is at least one of the direction of the object's magnetic field and the strength of the object's magnetic field. The sensor element is a magnetic detection element configured to detect changes in at least one of the direction and intensity of the magnetic field of the object.

17. The sensor according to claim 16, characterized in that, The magnetic detection element is a magnetoresistive element. The functional layer contains multiple magnetic films.

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