Solar cell passivation layer material with optimized dielectric properties and method of preparation

Abstract

The application discloses a solar cell passivation layer material with optimized dielectric properties, which comprises aluminum oxynitride, aluminum nitride and silicon oxide, the component ratio of the aluminum oxynitride is not less than 97%, the total component ratio of the aluminum nitride and the silicon oxide is not higher than 3%, and the application thickness range of the material is 1-20 nm. The application further provides a preparation method of the solar cell passivation layer material with optimized dielectric properties, which comprises the following steps: S1, providing a reaction chamber, and using a protective gas to carry an aluminum-containing precursor source into the reaction chamber; S2, introducing oxygen source gas and nitrogen source gas into the reaction chamber as reaction gas; S3, controlling the temperature to be between 150 DEG C and 350 DEG C, and controlling the pressure to be between 300 mbar and 1000 mbar; and S4, carrying out radio frequency reaction by using a radio frequency power within 5 KW to form plasma sputtering, and depositing the passivation layer material to a silicon substrate surface. The application optimizes the preparation process of the solar cell passivation film material, uses a new material type, makes the passivation layer material keep a low thermal expansion coefficient, and can obtain more ideal dielectric properties.

Description

Technical Field

[0001] This invention relates to the field of solar cell manufacturing, and more particularly to a passivation layer material for solar cells with optimized dielectric properties and a method for its preparation. Background Technology

[0002] Crystalline silicon solar cells typically incorporate passivation layers. Common passivation layer materials include silicon dioxide and silicon nitride. Silicon dioxide, for example, has a low coefficient of thermal expansion and provides good passivation. However, existing mature processes for fabricating these passivation layers are costly and rely on high-temperature annealing, a process that significantly impacts product yield and the dielectric properties of the passivation layer. This invention optimizes the relevant processes and materials, enabling the passivation layer material to maintain a low coefficient of thermal expansion and achieve ideal dielectric properties. Summary of the Invention

[0003] Technical Purpose

[0004] To address the issues of high thermal expansion coefficient and limited dielectric properties in existing solar cell passivation layer materials, this invention provides a solar cell passivation layer material with optimized dielectric properties and its preparation method.

[0005] Technical solution

[0006] To achieve the above objectives, the present invention adopts the following technical solution.

[0007] On the one hand, the present invention proposes a passivation layer material for solar cells with optimized dielectric properties, comprising aluminum oxynitride, aluminum nitride and silicon oxide, wherein the proportion of aluminum oxynitride is not less than 97%, the total proportion of aluminum nitride and silicon oxide is not more than 3%, and the thickness range of the material application is 1~20nm.

[0008] On the other hand, this invention proposes a method for preparing a passivation layer material for solar cells with optimized dielectric properties, comprising the following steps:

[0009] S1 provides a reaction chamber, into which at least one aluminum-containing drive source is carried by a protective gas.

[0010] S2 introduces oxygen and nitrogen source gases into the reaction chamber as reaction gases;

[0011] S3 controls the temperature between 150°C and 350°C and the pressure between 300 mbar and 1000 mbar.

[0012] S4 uses radio frequency power up to 5KW to perform radio frequency reaction, forming plasma sputtering to deposit passivation layer material onto the silicon-based surface.

[0013] Furthermore, the aluminum-containing precursor source is trimethylaluminum.

[0014] Furthermore, the aluminum-containing catalyst source is the aluminum compound of dimethylaluminum isopropoxide.

[0015] Furthermore, the oxygen source gas includes oxygen.

[0016] Furthermore, the oxygen source gas includes nitrous oxide.

[0017] Furthermore, the oxygen source gas includes gaseous water.

[0018] Furthermore, the oxygen source gas includes ozone.

[0019] Furthermore, the nitrogen source gas is ammonia.

[0020] Furthermore, the protective gases are argon and nitrogen.

[0021] Beneficial effects

[0022] This invention optimizes the preparation process of passivation film materials for solar cells, using a new type of material to maintain a low coefficient of thermal expansion in the passivation layer material, thereby achieving more ideal dielectric properties. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the steps of the present invention. Detailed Implementation

[0024] To enable those skilled in the art to better understand the present invention, the invention will now be further described in conjunction with the accompanying drawings and specific embodiments. Example

[0025] This invention proposes a passivation layer material for solar cells with optimized dielectric properties, comprising aluminum oxynitride, aluminum nitride, and silicon oxide, wherein the proportion of aluminum oxynitride is 97%, the proportion of aluminum nitride is 1%, the proportion of silicon oxide is 2%, and the thickness range of the material is 20 nm.

[0026] This invention also proposes a method for preparing a passivation layer material for solar cells with optimized dielectric properties, comprising the following steps:

[0027] S1 provides a reaction chamber, using nitrogen and argon as protective gases to carry trimethylaluminum as an aluminum-containing precursor into the reaction chamber;

[0028] S2 introduces the oxygen source gas—ozone—and the nitrogen source gas—ammonia—as reaction gases into the reaction chamber;

[0029] S3 controls the temperature at 300℃ and the pressure at 500mbar;

[0030] S4 uses 5KW of RF power to perform RF reaction, forming plasma sputtering to deposit passivation layer material onto the silicon-based surface.

[0031] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A passivation layer material for solar cells with optimized dielectric properties, characterized in that: It contains aluminum oxynitride, aluminum nitride, and silicon oxide, with aluminum oxynitride comprising no less than 97% of the composition and aluminum nitride and silicon oxide comprising no more than 3% of the total composition. The thickness range of the material is 1-20 nm.

2. A method for preparing a solar cell passivation layer material with optimized dielectric properties as described in claim 1, characterized in that, The method includes the following steps: S1 provides a reaction chamber, into which at least one aluminum-containing drive source is carried by a protective gas. S2 introduces oxygen and nitrogen source gases into the reaction chamber as reaction gases; S3 controls the temperature between 150°C and 350°C and the pressure between 300 mbar and 1000 mbar. S4 uses radio frequency power up to 5KW to perform radio frequency reaction, forming plasma sputtering to deposit passivation layer material onto the silicon-based surface.

3. The method for preparing a passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The aluminum-containing flux source is trimethylaluminum.

4. The method for preparing a passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The aluminum-containing drive source is an aluminum compound of dimethylaluminum isopropoxide.

5. The method for preparing the passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The oxygen source gas includes oxygen.

6. The method for preparing the passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The oxygen source gas includes nitrous oxide.

7. The method for preparing the passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The oxygen source gas includes gaseous water.

8. The method for preparing the passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The oxygen source gas includes ozone.

9. The method for preparing the passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The nitrogen source gas is ammonia.

10. The method for preparing the passivation layer material for solar cells with optimized dielectric properties according to claim 2, characterized in that: The protective gases are argon and nitrogen.

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