A voltage detection device

Abstract

The application discloses a voltage detection device, comprising a high-voltage protection module, a switching module, a voltage boosting module and a control module, the input end of the high-voltage protection module is used for receiving a voltage value to be detected, the output end of the high-voltage protection module is connected with the switching module and the voltage boosting module in series, the output end of the switching module and the output end of the voltage boosting module are connected with the control module; the voltage boosting module comprises at least two voltage boosting sub-modules connected in parallel, the voltage boosting sub-module is used for boosting the voltage value of the input end of the voltage boosting sub-module to obtain a boosted voltage value, and different voltage boosting sub-modules have different boosting ratios; the switching module is used for selecting a corresponding voltage boosting sub-module according to the voltage value of the input end of the switching module and generating a boosting instruction signal; and the control module obtains the voltage value to be detected according to the boosted voltage value and the boosting instruction signal. The above scheme can realize accurate detection of the voltage to be detected, has the functions of high-voltage protection and multi-stage ratio automatic switching, and has a wide application scenario.

Description

Technical Field

[0001] This application relates to the field of vehicle electronic control technology, and in particular to a voltage detection device. Background Technology

[0002] Existing vehicles often contain hundreds of electronic control units to achieve electronic control of the vehicle. As the level of vehicle electrification increases, it is necessary to perform voltage detection and internal status detection on the electronic control units to ensure safe driving of the vehicle.

[0003] Existing voltage detection circuits generally use resistor voltage division matching based on the corresponding voltage level to detect the output voltage. However, this method often suffers from problems such as large fluctuations in the sampled voltage value due to resistor deviations and high accuracy of the sampling voltage range, leading to inaccurate voltage detection. Especially when the detected voltage is high, the lack of a protection module for high voltages can easily damage the detection circuit, increasing detection costs.

[0004] Therefore, an improved voltage detection related technology is needed to solve the above-mentioned technical problems. Summary of the Invention

[0005] To address the problems of the prior art, this application provides a technical solution for a voltage detection device, the technical solution of which is as follows:

[0006] This application provides a voltage detection device, including: a high-voltage protection module, a switching module, a boost module, and a control module;

[0007] The input terminal of the high-voltage protection module is used to receive the voltage value to be detected. The output terminal of the high-voltage protection module is connected in series with the switching module and the boost module respectively. The output terminals of the switching module and the boost module are both connected to the control module.

[0008] The boost module includes at least two boost sub-modules connected in parallel. The boost sub-modules are used to boost the input voltage value of the boost sub-module to obtain a boost voltage value. The at least two boost sub-modules have different boost ratios.

[0009] The switching module is used to select the corresponding boost sub-module according to the input voltage value of the switching module and generate a boost indication signal;

[0010] The control module is used to obtain the voltage value to be detected based on the boost voltage value and the boost indication signal.

[0011] Furthermore, the switching module includes a voltage comparison module and a switching module;

[0012] The input terminal of the voltage comparison module is connected to the output terminal of the high voltage protection module, and the output terminal of the voltage comparison module is connected to the control module.

[0013] The signal input terminal of the switching module is connected to the output terminal of the voltage comparison module, the voltage input terminal of the switching module is connected to the output terminal of the boost submodule, and the output terminal of the switching module is connected to the control module.

[0014] The voltage comparison module is used to generate a first boost indication signal when the voltage at the input terminal of the voltage comparison module is less than a preset voltage threshold.

[0015] The switching module is used to select the boost sub-module corresponding to the first boost indication signal when the first boost indication signal is received.

[0016] Furthermore, the boost module includes a first boost submodule;

[0017] The input terminal of the first boost submodule is connected to the output terminal of the high voltage protection module, and the output terminal of the first boost submodule is connected to the voltage input terminal of the switching module.

[0018] The switching module is used to control the first boost submodule and the control module to be in a conducting state when the first boost indication signal is received.

[0019] Furthermore, the voltage comparison module is also used to generate a second boost indication signal when the voltage value at the input terminal of the voltage comparison module is greater than the preset voltage threshold, and to send the second boost indication signal to the switching module;

[0020] The switching module is used to select the boost sub-module corresponding to the second boost indication signal when the second boost indication signal is received.

[0021] Furthermore, the boost module includes a second boost submodule;

[0022] The input terminal of the second boost submodule is connected to the output terminal of the high voltage protection module, and the output terminal of the second boost submodule is connected to the voltage input terminal of the switching module.

[0023] The switching module is used to control the second boost submodule and the control module to be in a conducting state when the second boost indication signal is received.

[0024] Furthermore, it also includes a voltage divider module;

[0025] The first input terminal of the voltage divider module is used to receive the voltage value to be detected, the second input terminal of the voltage divider module is connected to the output terminal of the high voltage protection module, and the output terminal of the voltage divider module is connected to the control module.

[0026] The voltage divider module is used to perform voltage divider processing on the voltage value to be tested when the voltage value to be tested is greater than or equal to the preset voltage divider threshold set in the voltage divider module, and generate a voltage divider indication signal.

[0027] Furthermore, it also includes a self-test module;

[0028] The signal input terminal of the self-test module is connected to the control module, the power input terminal of the self-test module is used to connect to the power supply, and the output terminal of the self-test module is connected to the input terminal of the high-voltage protection module.

[0029] The self-test module is used to respond to the detection trigger signal sent by the control module, input the output voltage value of the power supply to the high voltage protection module, and generate a detection signal.

[0030] Furthermore, it also includes an isolation module;

[0031] The input terminal of the isolation module is connected to the output terminal of the high-voltage protection module, and the output terminal of the isolation module is connected to the input terminal of the switching module and the input terminal of the boost module, respectively.

[0032] The isolation module is used to transmit the output voltage value of the high voltage protection module to the switching module and the boost module respectively, and the input voltage value of the isolation module is equal to the output voltage value of the isolation module.

[0033] Furthermore, the high-voltage protection module includes a first field-effect transistor, a first resistor, and a second field-effect transistor;

[0034] The drain of the first field-effect transistor is used to receive the voltage value to be detected, the source of the first field-effect transistor is connected to the source of the second field-effect transistor through the first resistor, and the gate of the first field-effect transistor is connected to the source of the second field-effect transistor.

[0035] The gate of the second field-effect transistor is connected to the source of the first field-effect transistor, and the drain of the second field-effect transistor is connected to the input terminal of the switching module.

[0036] Furthermore, the voltage comparison module includes a second resistor, a third resistor, and a voltage comparator;

[0037] One end of the second resistor is connected to the power supply, and the other end of the second resistor is connected to the inverting input of the voltage comparator. The non-inverting input of the voltage comparator is connected to the output of the high-voltage protection module.

[0038] The second resistor is connected in series with the third resistor;

[0039] The output of the voltage comparator is connected to the control module and the switching module, respectively.

[0040] The voltage detection device provided in this application has the following technical advantages:

[0041] This application embodiment achieves accurate detection of the voltage under test by setting up a high-voltage protection module, a switching module, a boost module, and a control module. Specifically, the input terminal of the high-voltage protection module is used to receive the voltage value to be detected, and the output terminal of the high-voltage protection module is connected in series with the switching module and the boost module respectively. The output terminals of the switching module and the boost module are both connected to the control module. The boost module includes at least two boost sub-modules arranged in parallel, wherein the boost sub-module is used to boost the voltage value at the input terminal of the boost sub-module to obtain a boost voltage value, and the at least two boost sub-modules have different boost ratios. The switching module is used to select the corresponding boost sub-module according to the voltage value at the input terminal of the switching module and generate a boost indication signal. The control module is used to obtain the voltage value to be detected according to the boost voltage value and the boost indication signal. The technical solution provided by this application can achieve accurate detection of the voltage under test, and has functions such as high-voltage protection and automatic switching of multi-level ratios, thereby significantly improving the detection accuracy and precision of the voltage under test. Attached Figure Description

[0042] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0043] Figure 1 This is a schematic diagram of the structure of a voltage detection device provided in an embodiment of this application;

[0044] Figure 2 A circuit diagram corresponding to a voltage detection device provided in an embodiment of this application;

[0045] The corresponding reference numerals in the attached figures are: 1-High voltage protection module; 11-First field-effect transistor; 12-First resistor; 13-Second field-effect transistor; 14-Tenth protection resistor; 2-Switching module; 21-Voltage comparator module; 22-Switch module; 211-Second resistor; 212-Third resistor; 213-Voltage comparator; 214-First protection resistor; 215-Second protection resistor; 216-Third protection resistor; 217-Second Zener diode; 3-Boost module; 31-First boost sub-module; 311-Fourth protection resistor; 312-Seventh resistor; 313-Eighth resistor; 314-First operational amplifier; 32-Second boost sub-module Block; 321-Fifth protection resistor; 322-Ninth resistor; 323-Tenth resistor; 324-Second operational amplifier; 33-Third Zener diode; 34-Fourth Zener diode; 4-Control module; 5-Voltage divider module; 51-Fourth resistor; 52-Fifth resistor; 53-Sixth resistor; 54-Third MOSFET; 55-First Zener diode; 56-Sixth protection resistor; 57-Seventh protection resistor; 58-Fifth Zener diode; 6-Self-test module; 61-Transistor; 62-Fourth MOSFET; 63-Reverse protection diode; 64-Eighth protection resistor; 7-Isolation module; 71-Third operational amplifier; 72-Ninth protection resistor. Detailed Implementation

[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0047] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in sequences other than those illustrated or described herein.

[0048] Please see Figures 1-2 The following is combined with Figures 1-2 The technical solution of this application is described in detail.

[0049] This application provides a voltage detection device, specifically including a high-voltage protection module 1, a switching module 2, a boost module 3, and a control module 4.

[0050] The high-voltage protection module 1 has an input terminal for receiving the voltage value to be detected, and its output terminal is connected in series with the switching module 2 and the boost module 3. The output terminals of both the switching module 2 and the boost module 3 are connected to the control module 4. The boost module 3 includes at least two boost sub-modules connected in parallel. Each boost sub-module is used to boost the input voltage value to obtain a boosted voltage value. The at least two boost sub-modules have different boost ratios. The switching module 2 is used to select the corresponding boost sub-module based on the input voltage value of the switching module 2 and generate a boost indication signal. The control module 4 is used to obtain the voltage value to be detected based on the boosted voltage value and the boost indication signal.

[0051] In this embodiment, by setting up a high-voltage protection module 1, a switching module 2, a boost module 3, and a control module 4, the accurate detection of the voltage value to be tested can be achieved, and it has functions such as high-voltage protection and automatic switching of multi-level ratios, thereby significantly improving the detection accuracy and precision of the voltage to be tested.

[0052] Specifically, this application sets the high-voltage protection module 1 between the voltage value to be detected and the switching module 2, and between the voltage value to be detected and the boost module 3, so that the high-voltage protection module 1 can limit the current value corresponding to the voltage value to be detected, thereby avoiding unavoidable damage to the switching module 2, the boost module 3 and the control module 4 due to the excessive current value corresponding to the voltage value to be detected, thus achieving precise high-voltage protection for the switching module 2, the boost module 3 and the control module 4.

[0053] Secondly, this application sets up a boost module 3 including at least two boost sub-modules connected in parallel, so as to use boost sub-modules with different boost ratios to perform boost processing on the input voltage value of the boost module 3 at different boost ratios, so as to achieve output voltage values ​​with multiple boost ratios, thereby increasing the range of output voltage values ​​for application scenarios with different voltage requirements.

[0054] Furthermore, this application sets up a switching module 2 to select the corresponding boost sub-module based on the correspondence between the input voltage value of the switching module 2 and the preset voltage threshold, thereby achieving automatic switching of multi-level boost ratios and improving the detection accuracy and precision of the voltage value to be measured. At the same time, the switching module 2 generates a corresponding boost indication signal and sends the boost indication signal to the control module 4, so that the control module 4 determines the voltage value to be measured based on the boost voltage value and the boost indication signal, thereby achieving accurate detection of the voltage value to be measured and significantly improving accuracy.

[0055] In one specific embodiment, the high-voltage protection module 1 includes a first field-effect transistor 11, a first resistor 12, and a second field-effect transistor 13; wherein, the drain of the first field-effect transistor 11 is used to receive the voltage value to be detected, the source of the first field-effect transistor 11 is connected to the source of the second field-effect transistor 13 through the first resistor 12, the gate of the first field-effect transistor 11 is connected to the source of the second field-effect transistor 13, the gate of the second field-effect transistor 13 is connected to the source of the first field-effect transistor 11, and the drain of the second field-effect transistor 13 is connected to the input terminal of the switching module 2.

[0056] Specifically, the high-voltage protection module 1 is composed of a first field-effect transistor 11, a first resistor 12, and a second field-effect transistor 13. The drain of the first field-effect transistor 11 receives the voltage value to be detected. The voltage value flows sequentially through the first field-effect transistor 11, the first resistor 12, and the second field-effect transistor 13. Since both the first field-effect transistor 11 and the second field-effect transistor 13 are depletion-type field-effect transistors, when the voltage value to be detected flows from the drain of the first field-effect transistor 11 through the high-voltage protection module 1, both the first field-effect transistor 11 and the second field-effect transistor 13 are in a conducting state. Therefore, by configuring the resistance value of the first resistor 12, the current value corresponding to the voltage value to be detected input to the high-voltage protection module 1 can be limited. That is, by increasing the resistance value of the first resistor 12, the current value corresponding to the voltage value to be detected flowing through the high-voltage protection module 1 can be reduced, thereby limiting the current value corresponding to the voltage value to be detected input to the high-voltage protection module 1. This can prevent unavoidable damage to the switching module 2 and the boost module 3 connected to the high-voltage protection module 1 due to the excessive current value corresponding to the voltage value to be detected.

[0057] It should be noted that when the voltage value to be detected flows through the high voltage protection module 1, the input voltage value and the output voltage value of the high voltage protection module 1 remain unchanged, so as to ensure the accuracy of the detection of the voltage value to be detected.

[0058] In practical applications, the resistance value of the first resistor 12 can be determined by the shut-off voltage that turns off the first field-effect transistor 11 and the second field-effect transistor 13, the input current corresponding to the voltage to be detected, and the desired current. For example, let the resistance value of the first resistor 12 be R. 12 ,but

[0059]

[0060] In the formula, V gs(off) The turn-off voltage that puts the first field-effect transistor 11 and the second field-effect transistor 13 into the off state, I d I is the input current corresponding to the voltage value to be detected. dssAs can be seen from the formula for determining the resistance value of the first resistor 12, by configuring different resistance values ​​of the first resistor 12, the current value corresponding to the voltage value to be detected flowing through the high voltage protection module 1 can be limited.

[0061] Furthermore, the high-voltage protection module 1 also includes a tenth protection resistor 14. This application achieves the protection function of the high-voltage protection module 1 by setting the tenth protection resistor 14.

[0062] In an optional embodiment, the switching module 2 includes a voltage comparison module 21 and a switching module 22. The input terminal of the voltage comparison module 21 is connected to the output terminal of the high-voltage protection module 1, and the output terminal of the voltage comparison module 21 is connected to the control module 4. The signal input terminal of the switching module 22 is connected to the output terminal of the voltage comparison module 21, the voltage input terminal of the switching module 22 is connected to the output terminal of the boost submodule, and the output terminal of the switching module 22 is connected to the control module 4. The voltage comparison module 21 is used to generate a first boost indication signal when the voltage at the input terminal of the voltage comparison module 21 is less than a preset voltage threshold. The switching module 22 is used to select the boost submodule corresponding to the first boost indication signal when it receives the first boost indication signal.

[0063] In this embodiment, the voltage comparison module 21 judges the input voltage of the voltage comparison module 21 against a preset voltage threshold. When the input voltage of the voltage comparison module 21 is less than the preset voltage threshold, a first boost indication signal is generated and sent to the switch module 22. The switch module 22 selects the corresponding boost sub-module based on the first boost indication signal to realize automatic switching of multi-level boost ratio, thereby improving the detection accuracy of the voltage value to be measured.

[0064] In practical applications, the first boost indication signal can be a low-level boost indication signal. When the switching module 22 receives the low-level boost indication signal sent by the voltage comparison module 21, the switching module 22 selects the boost sub-module with the boost ratio corresponding to the low-level boost indication signal, so that the boost sub-module with the boost ratio corresponding to the low-level boost indication signal and the control module 4 are in a conducting state. This allows the control module 4 to determine the voltage value to be detected based on the boost voltage value output by the boost sub-module with the boost ratio corresponding to the low-level boost indication signal and the low-level boost indication signal, thereby realizing the detection of the voltage value to be detected.

[0065] In one specific embodiment, the voltage comparison module 21 includes a second resistor 211, a third resistor 212, and a voltage comparator 213; wherein, one end of the second resistor 211 is connected to the power supply, the other end of the second resistor 211 is connected to the inverting input terminal of the voltage comparator 213, and the non-inverting input terminal of the voltage comparator 213 is connected to the output terminal of the high voltage protection module 1; the second resistor 211 and the third resistor 212 are connected in series; and the output terminal of the voltage comparator 213 is connected to the control module 4 and the switch module 22 respectively.

[0066] Specifically, voltage comparator 213 is a device for identifying and comparing input signals. It can be understood that voltage comparator 213 compares the voltage value at the non-inverting input terminal with the voltage value at the inverting input terminal, and then outputs a corresponding indication signal. Voltage comparator 213 includes a non-inverting input terminal and an inverting input terminal. When the voltage at the non-inverting input terminal is higher than the voltage at the inverting input terminal, a high-voltage boost indication signal is output; when the voltage at the inverting input terminal is higher than the voltage at the non-inverting input terminal, a low-voltage boost indication signal is output. The non-inverting input terminal of voltage comparator 213 is as follows: Figure 2 The "+" input terminal of voltage comparator 213, and the inverting input terminal of voltage comparator 213 are as follows: Figure 2 The "-" input terminal of the medium voltage comparator 213.

[0067] In practical applications, when the voltage value at the non-inverting input terminal of voltage comparator 213 is less than the voltage value at the inverting input terminal, that is, when the input voltage of voltage comparator module 21 is less than a preset voltage threshold, voltage comparator 213 generates a low-level boost indication signal and sends it to switch module 22. Switch module 22 then selects the boost sub-module corresponding to the low-level boost indication signal based on the signal. Similarly, when the voltage value at the non-inverting input terminal of voltage comparator 213 is greater than the voltage value at the inverting input terminal, that is, when the input voltage of voltage comparator module 21 is greater than a preset voltage threshold, voltage comparator 213 generates a high-level boost indication signal and sends it to switch module 22. Switch module 22 then selects the boost sub-module corresponding to the high-level boost indication signal based on the signal, thereby enabling automatic switching of multi-level boost ratios.

[0068] It should be noted that the preset voltage threshold is the voltage value after the power supply voltage is divided by the second resistor 211 and the third resistor 212. The preset voltage threshold can be set according to the actual situation, and no specific limitation is made here.

[0069] Furthermore, the voltage comparison module 21 also includes a first protection resistor 214, a second protection resistor 215, a third protection resistor 216, and a second Zener diode 217. This application provides protection for the voltage comparison module 21 by setting the first protection resistor 214, the second protection resistor 215, and the third protection resistor 216, and provides clamping protection for the voltage comparison module 21 by setting the second Zener diode 217.

[0070] In an optional embodiment, the boost module 3 includes a first boost submodule 31, wherein the input terminal of the first boost submodule 31 is connected to the output terminal of the high voltage protection module 1, and the output terminal of the first boost submodule 31 is connected to the voltage input terminal of the switch module 22; the switch module 22 is used to control the first boost submodule 31 and the control module 4 to be in a conducting state when a first boost indication signal is received.

[0071] Specifically, the first boost submodule 31 is a boost submodule with a first boost ratio corresponding to the first boost indication signal. The first boost indication signal can be a low-level boost indication signal. When the switch module 22 receives the low-level boost indication signal sent by the voltage comparison module 21, it controls the first boost submodule 31 to be in a conducting state with the control module 4, so that the control module 4 can receive the boost voltage value with the first boost ratio after being boosted by the first boost submodule 31. Then, the control module 4 determines the voltage value to be detected based on the boost voltage value with the first boost ratio and the low-level boost indication signal.

[0072] In one specific embodiment, the first boost submodule 31 includes a seventh resistor 312, an eighth resistor 313, and a first operational amplifier 314. The non-inverting input terminal of the first operational amplifier 314 is connected to the output terminal of the high-voltage protection module 1, the inverting input terminal of the first operational amplifier 314 is connected to the seventh resistor 312, the output terminal of the first operational amplifier 314 is connected to the voltage input terminal of the switching module 22, and the output terminal of the first operational amplifier 314 is also connected to the eighth resistor 313 and the seventh resistor 312 in sequence. The seventh resistor 312 is grounded.

[0073] Specifically, a first amplifier circuit is constructed from a seventh resistor 312, an eighth resistor 313, and a first operational amplifier 314. The amplification factor of this first amplifier circuit is determined by the resistance values ​​of the seventh resistor 312 and the eighth resistor 313. For example, let the amplification factor of the first amplifier circuit be g1.

[0074]

[0075] In the formula, R 312 R is the resistance value of the seventh resistor 312. 313The resistance value of the eighth resistor 313 is given. When the switching module 22 receives the low-level boost indication signal sent by the voltage comparison module 21, it controls the first boost submodule 31 to be in a conducting state with the control module 4. At this time, the control module 4 receives the first boost voltage value determined by the amplification factor of the first amplifier circuit. Then, the control module 4 determines the voltage value to be detected based on the first boost voltage value and the low-level boost indication signal.

[0076] Furthermore, the first boost submodule 31 also includes a fourth protection resistor 311. This application sets the fourth protection resistor 311 to limit the current input to the first boost submodule 31, thereby protecting the first boost submodule 31.

[0077] In an optional implementation, the voltage comparison module 21 is further configured to generate a second boost indication signal when the input voltage value of the voltage comparison module 21 is greater than a preset voltage threshold, and send the second boost indication signal to the switch module 22; the switch module 22 is configured to select the boost sub-module corresponding to the second boost indication signal when it receives the second boost indication signal.

[0078] Specifically, when the input voltage of the voltage comparison module 21 is greater than the preset voltage threshold, the voltage comparison module 21 generates a second boost indication signal and sends the second boost indication signal to the switch module 22. The second boost indication signal can be a high-level boost indication signal. When the switch module 22 receives the high-level boost indication signal, the switch module 22 selects the boost sub-module with the boost ratio corresponding to the high-level boost indication signal, thereby making the boost sub-module with the boost ratio corresponding to the high-level boost indication signal and the control module 4 in a conducting state to realize the automatic switching of multiple boost ratios.

[0079] In an optional embodiment, the boost module 3 includes a second boost submodule 32; wherein the input terminal of the second boost submodule 32 is connected to the output terminal of the high voltage protection module 1, and the output terminal of the second boost submodule 32 is connected to the voltage input terminal of the switch module 22; the switch module 22 is used to control the second boost submodule 32 and the control module 4 to be in a conducting state when a second boost indication signal is received.

[0080] Specifically, the second boost submodule 32 is a boost submodule with a second boost ratio corresponding to the second boost indication signal. The second boost indication signal can be a high-level boost indication signal. When the switch module 22 receives the high-level boost indication signal sent by the voltage comparison module 21, it controls the second boost submodule 32 to be in a conducting state with the control module 4, so that the control module 4 can receive the boosted voltage value with the second boost ratio after being boosted by the second boost submodule 32. Then, the control module 4 determines the voltage value to be detected based on the boosted voltage value with the second boost ratio and the high-level boost indication signal.

[0081] In one specific embodiment, the second boost submodule 32 includes a ninth resistor 322, a tenth resistor 323, and a second operational amplifier 324. The non-inverting input terminal of the second operational amplifier 324 is connected to the output terminal of the high-voltage protection module 1, the inverting input terminal of the second operational amplifier 324 is connected to the ninth resistor 322, the output terminal of the second operational amplifier 324 is connected to the voltage input terminal of the switching module 22, and the output terminal of the second operational amplifier 324 is also connected to the tenth resistor 323 and the ninth resistor 322 in sequence. The ninth resistor 322 is grounded.

[0082] Specifically, a second amplifier circuit is constructed from the ninth resistor 322, the tenth resistor 323, and the second operational amplifier 324. The amplification factor of this second amplifier circuit is determined by the resistance values ​​of the ninth resistor 322 and the tenth resistor 323. For example, let the amplification factor of the second amplifier circuit be g2.

[0083]

[0084] In the formula, R 322 R is the resistance value of the ninth resistor, 322. 323 The resistance value of the tenth resistor 323 is given. When the switching module 22 receives a high-level boost indication signal sent by the voltage comparison module 21, it controls the second boost submodule 32 to be in a conducting state with the control module 4. At this time, the control module 4 receives the second boost voltage value determined by the amplification factor of the second amplifier circuit. Then, the control module 4 determines the voltage value to be detected based on the second boost voltage value and the high-level boost indication signal.

[0085] Furthermore, the second boost submodule 32 also includes a fifth protection resistor 321. This application sets the fifth protection resistor 321 to limit the current input to the second boost submodule 32, thereby protecting the second boost submodule 32.

[0086] Furthermore, the boost module 3 also includes a third Zener diode 33 and a fourth Zener diode 34. This application uses the third Zener diode 33 and the fourth Zener diode 34 to achieve clamp protection for the first boost submodule 31 and the second boost submodule 32.

[0087] In an optional embodiment, the voltage detection device further includes a voltage divider module 5; wherein, the first input terminal of the voltage divider module 5 is used to receive the voltage value to be detected, the second input terminal of the voltage divider module 5 is connected to the output terminal of the high voltage protection module 1, and the output terminal of the voltage divider module 5 is connected to the control module 4; the voltage divider module 5 is used to perform voltage divider processing on the voltage value to be detected when the voltage value to be detected is greater than the preset voltage divider threshold set in the voltage divider module 5, and generate a voltage divider indication signal.

[0088] In this embodiment, the first input terminal of the voltage divider module 5 is used to receive the voltage value to be detected, so that when the voltage value to be detected is greater than or equal to the preset voltage divider threshold set in the voltage divider module 5, the voltage value to be detected is divided. At the same time, the voltage divider module 5 generates a voltage divider indication signal and sends the voltage divider indication signal to the control module 4, so that the control module 4 can comprehensively judge the voltage value to be detected based on the voltage divider indication signal, the boost voltage value and the boost indication signal, so as to improve the detection accuracy of the voltage value to be detected.

[0089] In practical applications, the voltage divider indication signal can be a high-level voltage divider indication signal. That is, when the voltage value to be detected is greater than or equal to the preset voltage divider threshold set in the voltage divider module 5, the voltage divider module 5 performs voltage divider processing on the voltage value to be detected and generates a high-level voltage divider indication signal. At the same time, the voltage divider module 5 sends the high-level voltage divider indication signal to the control module 4 so that the control module 4 can comprehensively judge the voltage value to be detected based on the high-level voltage divider indication signal, the boost voltage value, and the boost indication signal, so as to improve the detection accuracy of the voltage value to be detected.

[0090] It should be noted that when the voltage value to be detected is less than the preset voltage division threshold set in the voltage divider module 5, the voltage divider module 5 is in the off state, and the voltage value to be detected cannot be divided by the voltage divider module 5. At this time, the voltage divider module 5 generates a low-level indication signal and sends the low-level indication signal to the control module 4, so that the control module 4 can comprehensively judge the voltage value to be detected based on the low-level indication signal, the boost voltage value, and the boost indication signal. The low-level indication signal indicates that the voltage value to be detected is less than the preset voltage division threshold set in the voltage divider module 5.

[0091] In one specific embodiment, the voltage divider module 5 includes a fourth resistor 51, a fifth resistor 52, a sixth resistor 53, a third field-effect transistor 54, and a first Zener diode 55. One end of the fourth resistor 51 is used to receive the voltage value to be detected, and the other end of the fourth resistor 51 is connected to the drain of the third field-effect transistor 54 through the fifth resistor 52. The gate of the third field-effect transistor 54 is connected to the anode of the first Zener diode 55, the sixth resistor 53, and the control module 4. The cathode of the first Zener diode 55 is connected to the output terminal of the high-voltage protection module 1, and the anode of the first Zener diode 55 is also connected to the sixth resistor 53.

[0092] Specifically, the cathode of the first Zener diode 55 is connected to the output terminal of the high-voltage protection module 1. When the output voltage of the high-voltage protection module 1 is greater than or equal to a preset voltage division threshold (where the preset voltage division threshold is the breakdown voltage of the first Zener diode 55), the first Zener diode 55 breaks down and generates leakage current. This leakage current flows through the sixth resistor 53 to generate a voltage value. Simultaneously, since the gate of the third field-effect transistor 54 is connected to the anode of the first Zener diode 55 and the source of the third field-effect transistor 54 is grounded, the third field-effect transistor 54 is in a conducting state. When the third field-effect transistor 54 is in a conducting state, the fourth resistor 51 and the fifth resistor 52 form a voltage divider circuit, thereby achieving voltage division of the voltage value to be detected. At this time, the voltage divider module 5 generates a voltage division indication signal and sends it to the control module 4. The voltage division ratio of this voltage divider circuit is determined by the resistance values ​​of the fourth resistor 51 and the fifth resistor 52. For example, let the voltage division ratio of the voltage divider circuit be h1.

[0093]

[0094] In the formula, R 51 R is the resistance value of the fourth resistor 51. 52 This is the resistance value of the fifth resistor, 52.

[0095] It should be noted that when the voltage divider module 5 divides the voltage value to be detected, the voltage values ​​flowing into the switching module 2 and the boost module 3 are both voltage values ​​after voltage division. Therefore, when the control module 4 calculates the voltage value, it should take into account the voltage value divided by the voltage divider module 5 in order to obtain the voltage value to be detected input to the voltage detection device.

[0096] In one embodiment, when the output voltage of the high voltage protection module 1 is less than the preset voltage divider threshold, it indicates that the output voltage to be detected of the high voltage protection module 1 has not reached the breakdown voltage of the first Zener diode 55. At this time, the third field-effect transistor 54 is in the off state. When the third field-effect transistor 54 is in the off state, the fourth resistor 51 and the fifth resistor 52 cannot form a voltage divider circuit, so the voltage divider module 5 cannot perform voltage divider processing on the voltage to be detected. At this time, the voltage divider module 5 generates a low-level indication signal and sends the low-level indication signal to the control module 4.

[0097] Furthermore, the voltage divider module 5 also includes a sixth protection resistor 56, a seventh protection resistor 57, and a fifth Zener diode 58. This application provides overcurrent protection for the voltage divider module 5 by setting the sixth protection resistor 56 and the seventh protection resistor 57, and provides clamping protection for the voltage divider module 5 by setting the fifth Zener diode 58.

[0098] In this embodiment, the control module 4 comprehensively judges the voltage value to be detected based on the high-level voltage divider indication signal, the boost voltage value, and the boost indication signal, or based on the low-level indication signal, the boost voltage value, and the boost indication signal, in order to improve the detection accuracy of the voltage value to be detected and determine the voltage value to be detected input to the voltage detection device. For example, the voltage value to be detected is denoted as Vin.

[0099]

[0100] In the formula, Vs2 is the boost voltage value input from the switch module 22 to the control module 4. The amplification factor of the first amplifier circuit in the first boost submodule 31 is [value missing]. This refers to the amplification factor of the second amplifier circuit in the second boost submodule 32. The voltage division ratio of the voltage divider circuit is defined as follows: S1 low indicates that the control module 4 receives a low-level boost indication signal sent by the voltage comparator 213; S1 high indicates that the control module 4 receives a high-level boost indication signal sent by the voltage comparator 213; S3 low indicates that the control module 4 receives a low-level indication signal sent by the voltage divider module 5; S3 high indicates that the control module 4 receives a high-level voltage division indication signal sent by the voltage divider module 5. Then, the control module 4 determines the voltage value to be detected based on the received indication signals and the boost voltage value.

[0101] In an optional embodiment, the voltage detection device further includes a self-test module 6; wherein the signal input terminal of the self-test module 6 is connected to the control module 4, the power input terminal of the self-test module 6 is used to connect to the power supply, and the output terminal of the self-test module 6 is connected to the input terminal of the high-voltage protection module 1; the self-test module 6 is used to respond to the detection trigger signal sent by the control module 4, input the output voltage value of the power supply to the high-voltage protection module 1, and generate a detection signal.

[0102] In this embodiment, a self-test module 6 is provided to test the voltage detection device even when no voltage value to be tested is input, thereby ensuring the correctness and accuracy of the voltage detection device and further improving the detection accuracy of the voltage value to be tested. It should be noted that the self-test module 6 can perform the testing of the voltage detection device before the voltage value to be tested is detected, to ensure the accuracy of the voltage value to be tested.

[0103] Specifically, the signal input terminal of the self-test module 6 is connected to the control module 4 so that, in the absence of a voltage value to be detected, the control module 4 sends a detection trigger signal to the self-test module 6 to put the self-test module 6 into a conducting state. At this time, the power supply voltage is input to the high-voltage protection module 1 through the self-test module 6, so that, through the switching module 2, boost module 3, and voltage divider module 5 connected to the high-voltage protection module 1, the boost voltage value and boost indicator signal after being boosted by the boost module 3, and the voltage divider voltage value and voltage divider indicator signal after being divided by the voltage divider module 5, are output to the control module 4, so that the control module 4 can control the voltage distribution. Based on the voltage divider indication signal, the boost voltage value, and the boost indication signal, the control module 4 determines the detection voltage value of the input voltage detection device. This allows the control module 4 to determine the relationship between the detection voltage value and the power supply voltage. If the detection voltage value is equal to the power supply voltage, it indicates that the voltage detection device has no deviation in the detection process. If the detection voltage value is not equal to the power supply voltage, it indicates that the voltage detection device has a deviation in the detection process and needs to be corrected. This ensures the stability and accuracy of the output voltage value of the voltage detection device.

[0104] In practical applications, the detection trigger signal is a high-level detection trigger signal. When the self-test module 6 receives the high-level detection trigger signal, the self-test module 6 is in the conducting state so as to realize the detection of the voltage detection device.

[0105] It should be noted that when there is a voltage value to be detected, the control module 4 sends a low-level trigger signal to the self-test module 6, so that when the self-test module 6 receives the low-level trigger signal, it will be in a disconnected state to stop the voltage detection device from detecting.

[0106] In one specific embodiment, the self-test module 6 includes a transistor 61, a fourth field-effect transistor 62, and a reverse protection diode 63; wherein, the base of the transistor 61 is connected to the control module 4, the collector of the transistor 61 is connected to the gate of the fourth field-effect transistor 62; the source of the fourth field-effect transistor 62 is used to connect to the power supply, the drain of the fourth field-effect transistor 62 is connected to the anode of the reverse protection diode 63, and the cathode of the reverse protection diode 63 is connected to the input terminal of the high-voltage protection module 1.

[0107] Specifically, since the base of transistor 61 is connected to the control module 4, the emitter of transistor 61 is grounded, and transistor 61 is an NPN transistor, when the self-test module 6 receives a high-level detection trigger signal, transistor 61 is in the conducting state. At the same time, the gate of the fourth field-effect transistor 62 is connected to the collector of transistor 61, and the emitter of transistor 61 is grounded. This causes the voltage at the gate of the fourth field-effect transistor 62 to be pulled low when transistor 61 is in the conducting state, resulting in a voltage difference between the gate and source of the fourth field-effect transistor 62. Thus, the fourth field-effect transistor 62 is in the conducting state. At this time, the power supply voltage flows into the voltage detection device through the anti-reverse diode 63, thereby realizing the detection of the voltage detection device.

[0108] Furthermore, the self-test module 6 also includes an eighth protection resistor 64. This application uses the eighth protection resistor 64 to protect the self-test module 6.

[0109] In an optional embodiment, the voltage detection device further includes an isolation module 7; wherein the input terminal of the isolation module 7 is connected to the output terminal of the high voltage protection module 1, and the output terminal of the isolation module 7 is connected to the input terminal of the switching module 2 and the input terminal of the boost module 3 respectively; the isolation module 7 is used to transmit the output voltage value of the high voltage protection module 1 to the switching module 2 and the boost module 3 respectively, and the input voltage value of the isolation module 7 is equal to the output voltage value of the isolation module 7.

[0110] In one specific embodiment, the isolation module 7 includes a third operational amplifier 71 and a ninth protection resistor 72. The non-inverting input terminal of the third operational amplifier 71 is connected to the output terminal of the high-voltage protection module 1 and the second input terminal of the voltage divider module 5, respectively. The inverting input terminal of the third operational amplifier 71 is connected to the output terminal of the third operational amplifier 71 through the ninth protection resistor 72. The output terminal of the third operational amplifier 71 is connected to the input terminal of the voltage comparison module 21, the non-inverting input terminal of the first operational amplifier 314, and the non-inverting input terminal of the second operational amplifier 324, respectively.

[0111] In this embodiment, an isolation module 7 is provided to achieve high-impedance isolation between the high-voltage protection module 1 and the switching module 2, and between the high-voltage protection module 1 and the boost module 3. At the same time, the input voltage value and the output voltage value of the isolation module 7 remain unchanged to avoid the isolation module 7 affecting the input voltage value to be detected and reducing the accuracy of detecting the voltage value to be detected.

[0112] The following combination Figures 1-2 This application describes a voltage detection device provided by a specific embodiment.

[0113] The voltage detection device includes a high-voltage protection module 1, a switching module 2, a boost module 3, a control module 4, a voltage divider module 5, a self-test module 6, and an isolation module 7. The switching module 2 includes a voltage comparison module 21 and a switching module 22. The boost module 3 includes a first boost submodule 31 and a second boost submodule 32. Specifically, the high-voltage protection module 1 includes a first field-effect transistor 11, a first resistor 12, and a second field-effect transistor 13. The voltage comparison module 21 includes a second resistor 211, a third resistor 212, and a voltage comparator 213. The first boost submodule 31 includes a seventh resistor 312, an eighth resistor 313, and a first operational amplifier 314; the second boost submodule 32 includes a ninth resistor 322, a tenth resistor 323, and a second operational amplifier 324; the voltage divider module 5 includes a fourth resistor 51, a fifth resistor 52, a sixth resistor 53, a third field-effect transistor 54, and a first Zener diode 55; the self-test module 6 includes a transistor 61, a fourth field-effect transistor 62, and a reverse protection diode 63; and the isolation module 7 includes a third operational amplifier 71 and a ninth protection resistor 72.

[0114] The circuit structure of the above-mentioned devices is as follows: the drain of the first field-effect transistor 11 is used to receive the voltage value to be detected; the source of the first field-effect transistor 11 is connected to the source of the second field-effect transistor 13 through the first resistor 12; the gate of the first field-effect transistor 11 is connected to the source of the second field-effect transistor 13; the gate of the second field-effect transistor 13 is connected to the source of the first field-effect transistor 11; the drain of the second field-effect transistor 13 is connected to the input terminal of the switching module 2; the non-inverting input terminal of the third operational amplifier 71 is connected to the drain of the second field-effect transistor 13 and the second input terminal of the voltage divider module 5, respectively; the third operational amplifier 71... The inverting input terminal is connected to the output terminal of the third operational amplifier 71 through the ninth protection resistor 72. The output terminal of the third operational amplifier 71 is connected to the non-inverting input terminal of the voltage comparator 213, the non-inverting input terminal of the first operational amplifier 314, and the non-inverting input terminal of the second operational amplifier 324, respectively. One end of the second resistor 211 is used to connect to the power supply, and the other end of the second resistor 211 is connected to the inverting input terminal of the voltage comparator 213. The second resistor 211 and the third resistor 212 are connected in series. The output terminal of the voltage comparator 213 is connected to the control module 4 and the switch module 22, respectively.

[0115] Furthermore, the non-inverting input terminals of the first operational amplifier 314 and the second operational amplifier 324 are both connected to the output terminal of the third operational amplifier 71. The inverting input terminal of the first operational amplifier 314 is connected to the seventh resistor 312. The output terminal of the first operational amplifier 314 is connected to the voltage input terminal of the switching module 22. The output terminal of the first operational amplifier 314 is also connected to the eighth resistor 313 and the seventh resistor 312 in sequence, and the seventh resistor 312 is grounded. The inverting input terminal of the second operational amplifier 324 is connected to the ninth resistor 322. The output terminal of the second operational amplifier 324 is connected to the voltage input terminal of the switching module 22. The output terminal of the second operational amplifier 324 is also connected to the tenth resistor 323 and the ninth resistor 322 in sequence, and the ninth resistor 322 is grounded.

[0116] Secondly, the base of transistor 61 is connected to control module 4, and the collector of transistor 61 is connected to the gate of fourth field-effect transistor 62; the source of fourth field-effect transistor 62 is connected to the power supply, the drain of fourth field-effect transistor 62 is connected to the anode of anti-reverse diode 63, and the cathode of anti-reverse diode 63 is connected to the input terminal of high-voltage protection module 1; one end of fourth resistor 51 is used to receive the voltage value to be detected, and the other end of fourth resistor 51 is connected to the drain of third field-effect transistor 54 through fifth resistor 52; the gate of third field-effect transistor 54 is connected to the anode of first Zener diode 55, sixth resistor 53 and control module 4 respectively; the cathode of first Zener diode 55 is connected to the output terminal of high-voltage protection module 1, and the anode of first Zener diode 55 is also connected to sixth resistor 53.

[0117] Based on the above circuit structure, it can be concluded that this application detects the output of the voltage detection device through the self-test module 6. Specifically, when there is no input voltage value to be detected, the control module 4 sends a detection trigger signal to the self-test module 6, so that the transistor 61 and the fourth field-effect transistor 62 in the self-test module 6 are both in the conducting state. At this time, the power supply voltage flows into the high-voltage protection module 1 through the fourth field-effect transistor 62 and the anti-reverse diode 63, so that through the switching module 2, the boost module 3 and the voltage divider module 5 connected to the high-voltage protection module 1, the boost voltage value and boost indication signal of the power supply voltage after being boosted by the boost module 3 and the voltage divider module 5 are output to the control module 4. The divided voltage value and the divided voltage indication signal after voltage division are used by the control module 4 to determine the detection voltage value of the input voltage detection device based on the divided voltage indication signal, the boost voltage value, and the boost indication signal. This allows the control module 4 to determine the relationship between the detection voltage value and the power supply voltage. If the detection voltage value is equal to the power supply voltage, it indicates that there is no deviation in the detection process of the voltage detection device. If the detection voltage value is not equal to the power supply voltage, it indicates that there is a deviation in the detection process of the voltage detection device, and the voltage detection device needs to be corrected. This ensures the stability and accuracy of the output voltage value of the voltage detection device.

[0118] Furthermore, when a voltage value to be detected is input, this application limits the current value corresponding to the voltage value to be detected through the first field-effect transistor 11, the first resistor 12, and the second field-effect transistor 13 in the high-voltage protection module 1, so as to reduce the current value corresponding to the voltage value to be detected flowing through the high-voltage protection module 1. When the voltage value to be detected output by the high-voltage protection module 1 is greater than or equal to the breakdown voltage of the first Zener diode 55 in the voltage divider module 5, the first Zener diode 55 is broken down and a leakage current is generated. The leakage current flows through the sixth resistor 53 to generate a voltage value. At the same time, due to the third field-effect transistor 5... The gate of 4 is connected to the positive terminal of the first Zener diode 55, and the source of the third field-effect transistor 54 is grounded. Therefore, the third field-effect transistor 54 is in the conducting state. When the third field-effect transistor 54 is in the conducting state, the fourth resistor 51 and the fifth resistor 52 form a voltage divider circuit, thereby realizing the voltage division of the voltage value to be detected. At this time, the voltage divider module 5 generates a voltage division indication signal and sends the voltage division indication signal to the control module 4. When the voltage divider module 5 divides the voltage value to be detected, the voltage value after voltage division flows into the voltage comparison module 21 and the boost module 3 through the isolation module 7.

[0119] When the voltage value sent by the isolation module 7 to the non-inverting input terminal of the voltage comparator 213 in the voltage comparison module 21 is greater than the preset voltage threshold, the voltage comparison module 21 sends a high-level boost indication signal to the switching module 22 so that the switching module 22 controls the second boost submodule 32 to be in a conducting state with the control module 4. At this time, the control module 4 receives the second boost voltage value determined by the amplification factor of the second amplifier circuit. Then, based on the second boost voltage value, the voltage divider indication signal and the high-level boost indication signal, the control module 4 determines the voltage value to be detected, thereby realizing the accurate detection of the voltage value to be detected.

[0120] Alternatively, when the voltage value sent by the isolation module 7 to the non-inverting input terminal of the voltage comparator 213 in the voltage comparison module 21 is less than the preset voltage threshold, the voltage comparison module 21 sends a low-level boost indication signal to the switching module 22 so that the switching module 22 controls the first boost submodule 31 and the control module 4 to be in a conducting state. At this time, the control module 4 receives the first boost voltage value determined by the amplification factor of the first amplification circuit. Then, based on the first boost voltage value, the voltage divider indication signal and the high-level boost indication signal, the control module 4 determines the voltage value to be detected, thereby realizing the accurate detection of the voltage value to be detected.

[0121] As can be seen from the above technical solutions of the embodiments of this application, the following technical effects are achieved:

[0122] This application embodiment achieves accurate detection of the voltage under test by setting up a high-voltage protection module, a switching module, a boost module, and a control module. Specifically, the input terminal of the high-voltage protection module is used to receive the voltage value to be detected, and the output terminal of the high-voltage protection module is connected in series with the switching module and the boost module respectively. The output terminals of the switching module and the boost module are both connected to the control module. The boost module includes at least two boost sub-modules arranged in parallel, wherein the boost sub-module is used to boost the voltage value at the input terminal of the boost sub-module to obtain a boost voltage value, and the at least two boost sub-modules have different boost ratios. The switching module is used to select the corresponding boost sub-module according to the voltage value at the input terminal of the switching module and generate a boost indication signal. The control module is used to obtain the voltage value to be detected according to the boost voltage value and the boost indication signal. The technical solution provided by this application can achieve accurate detection of the voltage under test, and has functions such as high-voltage protection and automatic switching of multi-level ratios, thereby significantly improving the detection accuracy and precision of the voltage under test.

[0123] This application also provides a vehicle that includes the voltage detection device described above. Therefore, the vehicle in this application should have the technical effects of the voltage detection device described above, which will not be elaborated here.

[0124] While the present invention has been described through preferred embodiments, it is not limited to the embodiments described herein, and various changes and modifications are made without departing from the scope of the invention.

[0125] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A voltage detection device, characterized in that, include: High voltage protection module (1), switching module (2), boost module (3) and control module (4); The input terminal of the high voltage protection module (1) is used to receive the voltage value to be detected. The output terminal of the high voltage protection module (1) is connected in series with the switching module (2) and the boost module (3) respectively. The output terminals of the switching module (2) and the boost module (3) are both connected to the control module (4). The high voltage protection module (1) includes a first field-effect transistor (11), a first resistor (12), and a second field-effect transistor (13). The drain of the first field-effect transistor (11) is used to receive the voltage value to be detected. The source of the first field-effect transistor (11) is connected to the source of the second field-effect transistor (13) through the first resistor (12). The gate of the first field-effect transistor (11) is connected to the source of the second field-effect transistor (13). The gate of the second field-effect transistor (13) is connected to the source of the first field-effect transistor (11). The drain of the second field-effect transistor (13) is connected to the input terminal of the switching module (2). The boost module (3) includes at least two boost sub-modules connected in parallel. The boost sub-modules are used to boost the input voltage value of the boost sub-modules to obtain a boost voltage value. The at least two boost sub-modules have different boost ratios. The switching module (2) is used to select the corresponding boost sub-module according to the input voltage value of the switching module (2) and generate a boost indication signal; the switching module (2) includes a voltage comparison module (21) and a switching module (22); the input terminal of the voltage comparison module (21) is connected to the output terminal of the high voltage protection module (1), and the output terminal of the voltage comparison module (21) is connected to the control module (4); the signal input terminal of the switching module (22) is connected to the output terminal of the voltage comparison module (21), the voltage input terminal of the switching module (22) is connected to the output terminal of the boost sub-module, and the output terminal of the switching module (22) is connected to the control module (4); the voltage comparison module (21) is used to generate a first boost indication signal when the input voltage of the voltage comparison module (21) is less than a preset voltage threshold; the switching module (22) is used to select the boost sub-module corresponding to the first boost indication signal when the first boost indication signal is received; The control module (4) is used to obtain the voltage value to be detected based on the boost voltage value and the boost indication signal.

2. The voltage detection device according to claim 1, characterized in that, The boost module (3) includes a first boost submodule (31); The input terminal of the first boost submodule (31) is connected to the output terminal of the high voltage protection module (1), and the output terminal of the first boost submodule (31) is connected to the voltage input terminal of the switch module (22); The switching module (22) is used to control the first boost submodule (31) and the control module (4) to be in a conducting state when the first boost indication signal is received.

3. The voltage detection device according to claim 1, characterized in that, The voltage comparison module (21) is also used to generate a second boost indication signal when the voltage value at the input terminal of the voltage comparison module (21) is greater than the preset voltage threshold, and send the second boost indication signal to the switch module (22); The switching module (22) is used to select the boost sub-module corresponding to the second boost indication signal when the second boost indication signal is received.

4. The voltage detection device according to claim 3, characterized in that, The boost module (3) includes a second boost submodule (32); The input terminal of the second boost submodule (32) is connected to the output terminal of the high voltage protection module (1), and the output terminal of the second boost submodule (32) is connected to the voltage input terminal of the switch module (22); The switching module (22) is used to control the second boost submodule (32) and the control module (4) to be in a conducting state when the second boost indication signal is received.

5. The voltage detection device according to claim 1, characterized in that, It also includes a voltage divider module (5); The first input terminal of the voltage divider module (5) is used to receive the voltage value to be detected. The second input terminal of the voltage divider module (5) is connected to the output terminal of the high voltage protection module (1). The output terminal of the voltage divider module (5) is connected to the control module (4). The voltage divider module (5) is used to perform voltage divider processing on the voltage value to be detected when the voltage value to be detected is greater than or equal to the preset voltage divider threshold set in the voltage divider module (5), and generate a voltage divider indication signal.

6. The voltage detection device according to claim 1, characterized in that, It also includes a self-test module (6); The signal input terminal of the self-test module (6) is connected to the control module (4), the power input terminal of the self-test module (6) is used to connect to the power supply, and the output terminal of the self-test module (6) is connected to the input terminal of the high voltage protection module (1). The self-test module (6) is used to respond to the detection trigger signal sent by the control module (4), input the output voltage value of the power supply to the high voltage protection module (1), and generate a detection signal.

7. The voltage detection device according to claim 1, characterized in that, It also includes an isolation module (7); The input terminal of the isolation module (7) is connected to the output terminal of the high voltage protection module (1), and the output terminal of the isolation module (7) is connected to the input terminal of the switching module (2) and the input terminal of the boost module (3) respectively. The isolation module (7) is used to transmit the output voltage value of the high voltage protection module (1) to the switching module (2) and the boost module (3) respectively. The input voltage value of the isolation module (7) is equal to the output voltage value of the isolation module (7).

8. The voltage detection device according to claim 1, characterized in that, The voltage comparison module (21) includes a second resistor (211), a third resistor (212), and a voltage comparator (213); One end of the second resistor (211) is used to connect to the power supply, and the other end of the second resistor (211) is connected to the inverting input terminal of the voltage comparator (213). The non-inverting input terminal of the voltage comparator (213) is connected to the output terminal of the high voltage protection module (1). The second resistor (211) is connected in series with the third resistor (212); The output of the voltage comparator (213) is connected to the control module (4) and the switch module (22) respectively.

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