Substrate processing apparatus and method

Abstract

A substrate processing apparatus capable of controlling mist in a processing tank to minimize process defects. The substrate processing apparatus includes a first processing tank and a second processing tank adjacently arranged in a first direction, a first partition wall arranged between the first processing tank and the second processing tank and formed with an entrance and exit for a substrate to pass through, a transfer unit provided in the first processing tank and the second processing tank to move the substrate, a chemical liquid supply unit provided in the first processing tank to supply a chemical liquid to the substrate, and a first exhaust unit arranged between the first processing tank and the second processing tank and connected to the first partition wall and including a plurality of exhaust holes arranged in a second direction different from the first direction to exhaust mist in the first processing tank.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and method. Background Technology

[0002] A substrate processing apparatus is an apparatus for processing wafers or display substrates. For example, an apparatus for processing display substrates includes multiple processing tanks arranged sequentially adjacent to each other. When the display substrate passes through the multiple processing tanks, various chemicals such as cleaning solutions, etching solutions, and developing solutions can be sprayed onto the display substrate. Summary of the Invention

[0003] The problem that the invention aims to solve

[0004] On the other hand, the processing tank employs a drainage system to expel the sprayed liquid to the outside. If the drainage system is not optimized, the sprayed liquid will flow in the processing tank in a mist form, and the mist-like liquid will re-adhere to the display substrate, potentially causing process defects.

[0005] The problem to be solved by the present invention is to provide a substrate processing apparatus that can control the fog in the processing tank to minimize process defects.

[0006] Another problem to be solved by the present invention is to provide a substrate processing method that can control the fog in the processing tank to minimize process defects.

[0007] The subject matter of this invention is not limited to the subject matter mentioned above, and those skilled in the art will clearly understand other subject matters not mentioned based on the following description.

[0008] Solution to the problem

[0009] One aspect of the substrate processing apparatus of the present invention for achieving the above-mentioned objectives includes: a first processing tank and a second processing tank, which are arranged adjacent to each other along a first direction; a first partition wall disposed between the first processing tank and the second processing tank and having an inlet / outlet for substrate passage; a transfer unit disposed within the first processing tank and the second processing tank to move the substrate; a liquid supply unit disposed within the first processing tank to supply liquid to the substrate; and a first discharge unit disposed between the first processing tank and the second processing tank and connected to the first partition wall, and including a plurality of discharge holes disposed along a second direction different from the first direction to discharge mist within the first processing tank.

[0010] Another aspect of the substrate processing apparatus of the present invention for achieving the above-mentioned objectives may include: a first processing tank and a second processing tank, which are arranged adjacent to each other along a first direction; a first partition wall, which is disposed between the first processing tank and the second processing tank and has an inlet / outlet for substrate passage; a transfer unit disposed in the first processing tank and the second processing tank to move the substrate; a liquid supply unit disposed in the first processing tank to supply liquid to the substrate; and a first discharge unit disposed between the first processing tank and the second processing tank and connected to the first partition wall, the first discharge unit including: a body, which is disposed along a second direction different from the first direction; and a plurality of discharge holes formed in the body, the body including: a first sidewall, which protrudes toward the first processing tank from the first partition wall and has the plurality of discharge holes formed thereon; and a first connecting wall, which connects the first sidewall and the first partition wall, the first connecting wall forming an obtuse angle with the first partition wall.

[0011] Another aspect of the substrate processing apparatus of the present invention for achieving the above-mentioned objectives may include: a first processing tank and a second processing tank, which are arranged adjacent to each other along a first direction; a first partition wall disposed between the first processing tank and the second processing tank and having an inlet / outlet for the substrate to pass through; a transfer unit disposed in the first processing tank and the second processing tank to move the substrate; a liquid supply unit disposed in the first processing tank to supply liquid to the substrate; and an L-shaped drip prevention structure disposed above the inlet / outlet of the first partition wall to receive liquid flowing down along the first partition wall.

[0012] One aspect of the substrate processing method of the present invention for achieving the aforementioned other objective includes: providing a substrate processing apparatus, the substrate processing apparatus comprising: a first processing tank and a second processing tank disposed adjacent to each other along a first direction; a first partition wall disposed between the first processing tank and the second processing tank and having an inlet / outlet for substrate passage; a first discharge unit disposed between the first processing tank and the second processing tank and connected to the first partition wall, and the substrate processing apparatus including an L-shaped drip-proof structure, the first discharge unit including a body disposed along a second direction different from the first direction and a plurality of discharge holes formed on the body, the body including a first sidewall protruding toward the first processing tank from the first partition wall and having the plurality of discharge holes formed thereon and a first connecting wall connecting the first sidewall and the first partition wall; discharging liquid mist in the first processing tank through the plurality of discharge holes; and causing liquid mist adhering to the first sidewall to flow down along the first connecting wall and the first partition wall and enter the drip-proof structure.

[0013] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0014] Figure 1 This is a diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention.

[0015] Figure 2 It is used for explanation Figure 1 An enlarged view of region A.

[0016] Figure 3 It is used for explanation Figure 1 A perspective view showing the relationship between the first processing tank, the first discharge unit, and the second discharge unit.

[0017] Figure 4 It is used for explanation Figure 1 The front view of the construction of the first discharge unit.

[0018] Figure 5 It is used for explanation Figure 2 A magnified view of region B.

[0019] Figure 6 It is used for explanation Figure 1 The main view of the structure to prevent dripping.

[0020] Figure 7 This is a diagram illustrating the operation of a substrate processing apparatus according to a first embodiment of the present invention.

[0021] Figure 8 This is a diagram illustrating a substrate processing apparatus according to a second embodiment of the present invention.

[0022] Figure 9 This is a diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention.

[0023] Figure 10 This is a diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention.

[0024] Figure 11 This is a diagram illustrating a substrate processing apparatus according to a fourth embodiment of the present invention. Detailed Implementation

[0025] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages, features, and methods of implementing the present invention will become clear from the accompanying drawings and the detailed embodiments described below. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various ways different from each other. These embodiments are provided merely to fully disclose the invention and to fully inform those skilled in the art of the scope of the invention, which is defined only by the scope of the claims. Throughout this specification, the same reference numerals refer to the same constituent elements.

[0026] Terms such as "below," "below," "lower," "above," and "upper," used as spatially relative terms, can be used to more easily describe the relationship between one element or component and other elements or components as shown in the figure. Spatially relative terms should be understood to include terms that describe the different orientations of elements during use or operation, in addition to the orientations shown in the figure. For example, if the elements shown in the figure are flipped, an element described as "below" or "below" of another element can be placed "above" of another element. Therefore, the exemplary term "below" can include both "below" and "above." Elements can also be oriented along other directions, thereby allowing the spatially relative terms to be interpreted according to the orientation direction.

[0027] It should be understood that although the terms first, second, etc., are used herein to describe various elements, constituent elements, and / or parts, these elements, constituent elements, and / or parts are of course not limited by these terms. These terms are only used to distinguish one element, constituent element, or part from another element, constituent element, or part. Therefore, it is natural that the first element, first constituent element, or first part mentioned below can also be a second element, second constituent element, or second part within the technical concept of the present invention.

[0028] The terminology used in this specification is for illustrative purposes and is not intended to limit the invention. Unless otherwise specifically mentioned herein, the singular includes the plural. The terms "comprises" and / or "comprising" as used in this specification do not exclude the presence or addition of one or more other constituent elements, steps, steps, and / or components in addition to those mentioned.

[0029] Unless otherwise defined, all terms used in this specification (including technical and scientific terms) may be used in the sense that is commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, generally used, predefined terms should not be idealized or over-interpreted unless explicitly and specifically defined.

[0030] Embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the description with reference to the drawings, the same reference numerals are used for the same or corresponding constituent elements, regardless of the drawing numbers, and repeated descriptions thereof are omitted.

[0031] Figure 1 This is a diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention. Figure 2 It is used for explanation Figure 1 An enlarged view of region A. Figure 3 It is used for explanation Figure 1 A perspective view showing the relationship between the first processing tank, the first discharge unit, and the second discharge unit. Figure 4 It is used for explanation Figure 1 The front view of the construction of the first discharge unit. Figure 5 It is used for explanation Figure 2 A magnified view of region B. Figure 6 It is used for explanation Figure 1 The main view of the structure to prevent dripping. Figure 7 This is a diagram illustrating the operation of a substrate processing apparatus according to a first embodiment of the present invention.

[0032] First refer to Figure 1 According to the first embodiment of the present invention, the substrate processing apparatus 1 includes a first processing tank 101, a second processing tank 102, a third processing tank 103, a fourth processing tank 104, a fifth processing tank 105, a transfer unit 110, a first liquid supply unit 120, a first discharge unit 210, a second discharge unit 310, etc.

[0033] The fifth processing tank 105, the fourth processing tank 104, the second processing tank 102, the first processing tank 101, and the third processing tank 103 can be arranged sequentially along the first direction X.

[0034] Partition walls 250, 350, and 250a can be arranged between adjacent processing tanks 101-105 to divide the processing tanks 101-105. For example, a first partition wall 250 is provided between the first processing tank 101 and the second processing tank 102, a second partition wall 350 is provided between the first processing tank 101 and the third processing tank 103, and a third partition wall 250a is provided between the second processing tank 102 and the fourth processing tank 104. Entrances and exits for substrate passage are formed in the partition walls 250, 350, and 250a (see reference). Figure 2(of 299).

[0035] The transfer unit 110 is disposed within a plurality of processing tanks 101-105 for transferring substrates. As shown, the transfer unit 110 may include rollers arranged at given intervals, and each roller is connected to a transfer shaft. The rollers rotate with the rotation of the transfer shaft and are capable of transferring substrates on the rollers. The transfer unit 110 is not limited to rollers. For example, the transfer unit 110 may also include an air-floating system.

[0036] The first drug supply unit 120 can be disposed within the first processing tank 101 to supply drug solution to the substrate. The first drug supply unit 120 can supply drug solution (e.g., deionized water) to the substrate under high pressure. The first drug supply unit 120 can use deionized water to agitate the substrate to remove particles present on the substrate.

[0037] The second liquid supply units 131a and 131b are disposed in the second processing tank 102. The second liquid supply units 131a and 131b spray liquid onto the upper and lower surfaces of the substrate, so that the substrate is kept wetted.

[0038] Similarly, the third liquid supply units 132a and 132b can be disposed in the third processing tank 103 to spray the liquid onto the upper and lower surfaces of the substrate.

[0039] The fourth liquid supply unit 140 is disposed in the fourth processing tank 104 to pre-wet the substrate.

[0040] An air curtain 150 is installed at the inlet of the fifth processing tank 105, blocking the space inside processing tanks 101-105 from the outside. A fan filter unit (FFU) 199 is installed at the top of the fifth processing tank 105. A high-performance filter is installed inside the fan filter unit 199 along with the fan, supplying clean air to the processing tanks 101-105.

[0041] An auxiliary discharge hole 102a for removing mist from the second processing tank 102 is formed on one surface of the second processing tank 102. An auxiliary discharge hole 104a for removing mist from the fourth processing tank 104 may be formed on one surface of the fourth processing tank 104.

[0042] Among them, reference Figure 1 and Figure 2 The first discharge unit 210 is disposed between the first processing tank 101 and the second processing tank 102, and is connected to the first partition wall 250.

[0043] The first discharge unit 210 includes main bodies 220 and 230 arranged along the second direction Y, and includes a discharge connecting pipe connected to one end of the main bodies 220 and 230 (see reference). Figure 3 (229).

[0044] The main bodies 220 and 230 include side walls 221 and 231 and connecting walls 222 and 232, which define the internal space. The first side wall 221 protrudes beyond the first partition wall 250 towards the first processing tank 101. The second side wall 231 protrudes beyond the first partition wall 250 towards the second processing tank 102. The first connecting wall 222 connects the first side wall 221 and the first partition wall 250, and the second connecting wall 232 connects the second side wall 231 and the first partition wall 250.

[0045] A discharge hole 225 is provided on the first sidewall 221 to draw in the mist from the first treatment tank 101. A discharge hole 235 is also provided on the second sidewall 231 to draw in the mist from the second treatment tank 102.

[0046] Additionally, an L-shaped drip-prevention structure 280 is formed in the first partition wall 250. The drip-prevention structure 280 receives the liquid medicine flowing down along the first connecting wall 222 and the first partition wall 250. The drip-prevention structure 280 is disposed on the upper side of the inlet 299 and can prevent the liquid medicine from dripping onto the substrate passing through the inlet 299.

[0047] Among them, reference Figure 5 This drip-prevention structure 280 includes a bracket 281 directly connected to the first partition wall 250 and a receiving wall 282 directly connected to the bracket 281 for receiving the flowing liquid medicine. Figure 5 As shown, the angle θ2 formed by the support 281 and the first partition wall 250 can be an obtuse angle. This ensures that even if the liquid adheres to the receiving wall 282, it will not fall directly downwards, but will flow along the obtuse-angled support 281. Thus, even if the liquid falls, the potential energy of the liquid can be minimized.

[0048] Among them, reference Figure 6 The drip-prevention structure 280 is configured along the second direction Y, and the drip-prevention structure 280 (in particular, the support 281) is inclined (refer to angle θ3). Figure 6 As shown, the angle θ3 formed by the extension direction of the drip prevention structure 280 (in particular, the support 281) and the extension direction of the inlet / outlet 299 can be an acute angle. The liquid medicine accumulated on the support 281 can be removed along the inclined support 281 to the outside of the first treatment tank 101.

[0049] Refer again Figure 2 On the other hand, the angle θ1 between the first connecting wall 222 and the first partition wall 250 can be an obtuse angle. This is to allow the liquid medicine adhering to the first sidewall 221 between the discharge hole 225 and the first connecting wall 222 to flow along the first connecting wall 222 and the first partition wall 250, so as to easily collect it in the drip prevention structure 280.

[0050] If the angle θ1 between the first connecting wall 222 and the first partition wall 250 is not an obtuse angle, the liquid medicine adhering to the first side wall 221 may fall directly downwards due to gravity. If the liquid medicine falls directly onto the substrate, it may cause a malfunction.

[0051] The distance d between the discharge hole 225 and the first connecting wall 222 can be greater than 1 mm and less than 10 mm. Distance d can be the distance between the lowermost edge of the discharge hole 225 and the uppermost edge of the first connecting wall 222. If the distance d is greater than 10 mm, the liquid medicine adhering to the first sidewall 221 between the discharge hole 225 and the first connecting wall 222 will not flow along the first connecting wall 222 and may fall directly downwards due to gravity. By minimizing the distance d, the liquid medicine adhering to the first sidewall 221 can be stably guided to the first connecting wall 222. Furthermore, the distance d is greater than 1 mm to ensure stable formation of the discharge hole 225 on the first sidewall 221.

[0052] Among them, reference Figure 3 and Figure 4 Alternatively, the main body 220 can be arranged along the second direction Y, and a discharge connecting pipe 229 can be provided at one end of the main body 220. As shown in the figure, the discharge connecting pipe 229 and the main body 220 do not overlap each other on the plane defined by the first direction X and the second direction Y.

[0053] Multiple discharge holes 2251, 2252, 2253, and 2254 are formed on the main body 220 (or the first sidewall 221). As shown in the figure, the first discharge hole 2251, the second discharge hole 2252, the third discharge hole 2253, and the fourth discharge hole 2254 can be arranged sequentially along the second direction Y.

[0054] It is possible that the first discharge hole 2251 is closest to the discharge connecting pipe 229, and the fourth discharge hole 2254 is farthest from the discharge connecting pipe 229.

[0055] The mist P1, P2, P3, and P4 from the first treatment tank 101 are drawn in through the first discharge port 2251, the second discharge port 2252, the third discharge port 2253, and the fourth discharge port 2254. The mist that enters the internal space of the main bodies 220 and 230 is discharged to the outside through the discharge connecting pipe 229.

[0056] Because the discharge connecting pipe 229 is offset to one side, the pressures in the multiple discharge holes 2251, 2252, 2253, and 2254 may differ. Therefore, the farther away from the discharge connecting pipe (229), the larger the size of the discharge holes 2251, 2252, 2253, and 2254 can be, so that the pressures in the multiple discharge holes 2251, 2252, 2253, and 2254 are substantially the same. For example, the size of the second discharge hole 2252 could be larger than the size of the first discharge hole 2251, the size of the third discharge hole 2253 could be larger than the size of the second discharge hole 2252, and the size of the fourth discharge hole 2254 could be larger than the size of the third discharge hole 2253.

[0057] If the heights of the discharge holes 2251, 2252, 2253, and 2254 are the same, then the widths of the discharge holes 2251, 2252, 2253, and 2254 can be different. That is, the further away from the discharge connecting pipe 229, the larger the widths of the discharge holes 2251, 2252, 2253, and 2254 can be. For example, the width W2 of the second discharge hole 2252 could be greater than the width W1 of the first discharge hole 2251, the width W3 of the third discharge hole 2253 could be greater than the width W2 of the second discharge hole 2252, and the width W4 of the fourth discharge hole 2254 could be greater than the width W3 of the third discharge hole 2253.

[0058] On the other hand, as described above, the second partition wall 350 is disposed between the first processing tank 101 and the third processing tank 103, and has an entrance / exit for the substrate to pass through.

[0059] The second discharge unit 310 can be disposed between the first processing tank 101 and the third processing tank 103 and connected to the second partition wall 350, and includes a plurality of discharge holes 3251, 3252, 3253, 3254 disposed along the second direction Y to discharge the mist P5, P6, P7, P8 in the first processing tank 101.

[0060] Among them, reference Figure 5 The first partition wall 250 may be equipped with a cover 258 that allows for adjustment of the size of the entrance 299.

[0061] The first partition wall 250 includes an upper partition wall 250a located above the entrance / exit 299 and a lower partition wall 250b located below the entrance / exit 299. The cover 258 includes a first cover 258a disposed on the upper partition wall 250a and a second cover 258b disposed on the lower partition wall 250b.

[0062] Among them, if refer to Figure 3 and Figure 7 The operation of the substrate processing apparatus 1 according to the first embodiment of the present invention is summarized as follows.

[0063] Reference Figure 3 and Figure 7 The mist generated in the first treatment tank 101 is drawn into the interior space of the main body 210 through a plurality of discharge holes 2251, 2252, 2253, and 2254 of the first discharge unit 210 provided on the front surface of the first side wall 221. It is then discharged to the outside through the discharge connecting pipe 229 along the interior space of the main body 210.

[0064] Additionally, the liquid medicine B1 adhering to the first sidewall 221 moves along the first connecting wall 222 (refer to liquid medicine B2) and along the first partition wall 250, entering the drip prevention structure 280 (refer to liquid medicine B3).

[0065] As described above, the fog in the first processing tank 101 can be controlled to minimize process defects.

[0066] Figure 8 This is a diagram illustrating a substrate processing apparatus according to a second embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 7 The main focus of the explanation will be on the differences between the contents described.

[0067] Reference Figure 8 In the substrate processing apparatus according to the second embodiment of the present invention, for example, the size of the second discharge hole 2252 may be the same as the size of the first discharge hole 2251, the size of the third discharge hole 2253 may be larger than the size of the second discharge hole 2252, and the size of the fourth discharge hole 2254 may be the same as the size of the third discharge hole 2253.

[0068] If the heights of the discharge holes 2251, 2252, 2253, and 2254 are the same, then the widths of the discharge holes 2251, 2252, 2253, and 2254 can be controlled to be different. For example, the width W2 of the second discharge hole 2252 can be the same as the width W1 of the first discharge hole 2251, the width W3 of the third discharge hole 2253 can be greater than the width W2 of the second discharge hole 2252, and the width W4 of the fourth discharge hole 2254 can be the same as the width W3 of the third discharge hole 2253.

[0069] Figure 9 This is a diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 7 The explanation will focus on the differences in the content.

[0070] Reference Figure 9 In the substrate processing apparatus according to the third embodiment of the present invention, a discharge cover 2253a, 2254a for adjusting the size of discharge holes 2253, 2254 may be provided on the first side wall.

[0071] The dimensions of the discharge holes 2253 and 2254 (refer to reference numerals H1 and H2) can be adjusted by moving the discharge covers 2253a and 2254a in one direction. For example, the dimensions of the discharge holes 2253 and 2254 can be adjusted by adjusting the discharge covers 2253a and 2254 so that the pressure in each discharge hole 2253 and 2254 is substantially the same.

[0072] Figure 10 This is a diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 7 The explanation will focus on the differences in the content.

[0073] Reference Figure 10 In the substrate processing apparatus according to the third embodiment of the present invention, the first discharge unit 210 is provided only on one side of the first partition wall 250 to discharge the mist generated in the first processing tank 101. The first discharge unit 210 may not discharge the mist generated in the second processing tank 102.

[0074] Similarly, the second discharge unit 310 is only provided on one side of the second partition wall 350 to discharge the mist generated in the first processing tank 101. The second discharge unit 310 may not discharge the mist generated in the third processing tank 103.

[0075] Figure 11 This is a diagram illustrating a substrate processing apparatus according to a fourth embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 7 The explanation will focus on the differences in the content.

[0076] Reference Figure 11 In the substrate processing apparatus according to the fourth embodiment of the present invention, a cover 258a capable of adjusting the size of the inlet / outlet 299 may be provided in the first partition wall. The first partition wall 250 includes an upper partition wall 250a located above the inlet / outlet 299 and a lower partition wall 250b located below the inlet / outlet 299. The cover 258a may be provided only in the upper partition wall 250a.

[0077] Although embodiments of the invention have been described above with reference to the accompanying drawings, those skilled in the art will recognize that the invention can be implemented in other specific forms without altering its technical spirit or essential characteristics. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A substrate processing apparatus, comprising: The first processing tank and the second processing tank are arranged adjacent to each other along the first direction; A first partition wall is disposed between the first processing tank and the second processing tank, and has an entrance / exit for the substrate to pass through; A transfer unit is disposed within the first processing tank and the second processing tank to move the substrate; A drug supply unit is disposed in the first processing tank to supply drug solution to the substrate; as well as A first discharge unit is disposed between the first processing tank and the second processing tank, and connected to the first partition wall, and includes a plurality of discharge holes arranged along a second direction different from the first direction to discharge the mist in the first processing tank. The first discharge unit includes: The first sidewall protrudes from the first partition wall toward the first processing groove; and The first connecting wall connects the first side wall and the first partition wall. The plurality of discharge holes are disposed on the first sidewall.

2. The substrate processing apparatus according to claim 1, wherein, The first discharge unit includes: The main body, which is arranged along the second direction; and A discharge connecting pipe is connected to one end of the main body. The discharge connecting pipe and the main body do not overlap each other on the plane defined by the first direction and the second direction. The main body includes the first sidewall and the first connecting wall.

3. The substrate processing apparatus according to claim 2, wherein, The plurality of discharge holes include a first discharge hole and a second discharge hole, wherein the first discharge hole is closer to the discharge connecting pipe than the second discharge hole, and the size of the second discharge hole is larger than the size of the first discharge hole.

4. The substrate processing apparatus according to claim 3, wherein, The width of the second discharge hole in the second direction is greater than the width of the first discharge hole in the second direction.

5. The substrate processing apparatus according to claim 1, wherein, The first discharge unit further includes: The second sidewall, which protrudes beyond the first partition wall toward the second processing groove; and The second connecting wall connects the second side wall to the first partition wall. The second sidewall is provided with a plurality of discharge holes for discharging the mist in the second treatment tank.

6. The substrate processing apparatus according to claim 1, wherein, The first connecting wall forms an obtuse angle with the first partition wall.

7. The substrate processing apparatus according to claim 1, wherein, The distance between the discharge hole and the first connecting wall is greater than 1 mm and less than 10 mm.

8. The substrate processing apparatus according to claim 1, wherein, A discharge cover for adjusting the size of the discharge hole is also provided on the first side wall.

9. The substrate processing apparatus according to claim 1, wherein, The first partition wall includes an L-shaped drip-prevention structure that receives the liquid medicine flowing down along the first connecting wall.

10. The substrate processing apparatus according to claim 9, wherein, The drip prevention structure includes: The bracket is directly connected to the first partition wall; and A receiving wall, which is directly connected to the support, is used to receive the flowing liquid medicine. The bracket forms an obtuse angle with the first partition wall.

11. The substrate processing apparatus according to claim 10, wherein, The drip-prevention structure is configured along a second direction, and the support is inclined.

12. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus also includes a cover disposed in the first partition wall and capable of adjusting the size of the entrance / exit.

13. The substrate processing apparatus according to claim 12, wherein, The first partition wall includes an upper partition wall located above the entrance / exit and a lower partition wall located below the entrance / exit. The cover includes a first cover disposed on the upper partition wall and a second cover disposed on the lower partition wall.

14. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus further includes an auxiliary discharge hole disposed on one surface of the second processing tank.

15. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus further includes a third processing tank, wherein the second processing tank, the first processing tank, and the third processing tank are arranged sequentially along the first direction. The substrate processing apparatus further includes: A second partition wall, disposed between the first processing tank and the third processing tank, and having an entrance / exit for the substrate to pass through; and The second discharge unit is disposed between the first processing tank and the third processing tank and connected to the second partition wall, and includes a plurality of discharge holes disposed along a third direction different from the first direction to discharge the mist in the first processing tank.

16. A substrate processing apparatus, comprising: The first processing tank and the second processing tank are arranged adjacent to each other along the first direction; A first partition wall is disposed between the first processing tank and the second processing tank, and has an entrance / exit for the substrate to pass through; A transfer unit is disposed within the first processing tank and the second processing tank to move the substrate; A drug supply unit is disposed in the first processing tank to supply drug solution to the substrate; as well as The first discharge unit is disposed between the first processing tank and the second processing tank and is connected to the first partition wall. The first discharge unit includes a main body disposed along a second direction different from the first direction and a plurality of discharge holes formed in the main body. The main body includes a first sidewall that protrudes from the first partition wall toward the first processing tank and has the plurality of discharge holes formed thereon, and a first connecting wall that connects the first sidewall and the first partition wall. The first connecting wall forms an obtuse angle with the first partition wall.

17. The substrate processing apparatus according to claim 16, wherein, The first discharge unit further includes a discharge connecting pipe connected to one end of the main body. The plurality of discharge holes include a first discharge hole and a second discharge hole arranged along the second direction. The first discharge hole is closer to the discharge connecting pipe than the second discharge hole, and the size of the second discharge hole is larger than the size of the first discharge hole.

18. The substrate processing apparatus according to claim 16, wherein, The first partition wall includes an L-shaped drip-prevention structure that receives the liquid medicine flowing down along the first connecting wall.

19. A substrate processing method, comprising: A substrate processing apparatus is provided, the substrate processing apparatus comprising: a first processing tank and a second processing tank disposed adjacent to each other along a first direction; a first partition wall disposed between the first processing tank and the second processing tank and having an inlet / outlet for substrate passage; and a first discharge unit disposed between the first processing tank and the second processing tank and connected to the first partition wall, wherein the substrate processing apparatus includes an L-shaped drip-prevention structure disposed in the first partition wall, the first discharge unit comprising a body disposed along a second direction different from the first direction and a plurality of discharge holes formed in the body, the body comprising a first sidewall protruding toward the first processing tank from the first partition wall and having the plurality of discharge holes formed thereon, and a first connecting wall connecting the first sidewall to the first partition wall; The liquid mist in the first treatment tank is discharged through the plurality of discharge holes; and The liquid medicine adhering to the first sidewall flows down along the first connecting wall and the first partition wall and enters the drip prevention structure.

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