Ion trap and quantum computing device

Abstract

The application discloses an ion trap and a quantum computing device, comprising: an integrated substrate, radio frequency electrodes and direct current electrodes prepared on the integrated substrate; wherein the integrated substrate has an axial light transmission slot. The ion trap of the embodiment of the application is designed based on the integrated substrate, eliminates the split misalignment problem caused by temperature changes, and enables the ion trap to be applied to a low-temperature environment; the ion trap obtains an open axial light transmission through the open slot, has a higher numerical aperture, and increases the light transmission degree of freedom of the ion trap, thereby providing support for large-scale application of quantum computing.

Description

Technical Field

[0001] This article relates to, but is not limited to, quantum computing technology, particularly an ion trap and quantum computing device. Background Technology

[0002] Ion trapping technology requires the stable capture, trapping, and manipulation of ions in a vacuum environment. This necessitates the design of ion trap devices, which apply DC or AC voltages to the devices and utilize the resulting electric field to trap charged ions at specific locations.

[0003] Common ion traps, such as quadrupole traps, utilize the principle of linear Paul prism traps, forming radio frequency (RF) potential wells in the radial directions (x and y) and static binding potential wells in the third axis (z), thus trapping ions in three-dimensional space. To form such a static binding potential well, at least two opposing RF electrodes are typically required; additionally, at least two opposing electrodes are needed, which can be grounded electrodes, applied electrostatic potentials, or applied inverse RF voltages; furthermore, two DC electrodes are required to form the axial binding potential wells. Quadrupole traps can only form second-order harmonic potential wells, cannot control the ion spacing, and are not conducive to the formation of large-scale ion crystals or the axial injection of light beams or the collection of ion fluorescence. Blade traps are also commonly used ion traps, consisting of four blade electrodes assembled and fixed on a support, providing more degrees of freedom of manipulation. However, this split electrode structure undergoes relative displacement as it decreases from room temperature to ultra-low temperatures, making it difficult to achieve high-quality, stable trapping. In addition, although surface traps and common integrated traps are molded as a single piece and will not be affected by temperature changes and will not produce relative displacement, they cannot provide axial optical manipulation freedom.

[0004] In summary, designing and implementing an ion trap that can eliminate structural changes caused by temperature variations and has axial optical manipulation freedom remains an unsolved problem. Summary of the Invention

[0005] The following is an overview of the subject matter described in detail herein. This overview is not intended to limit the scope of the claims.

[0006] This invention provides an ion trap and a quantum computing device that can realize an ion trap that provides axial optical manipulation degrees of freedom.

[0007] This invention provides an ion trap, comprising: an integrated substrate, a radio frequency electrode and a DC electrode fabricated on the integrated substrate; wherein the integrated substrate has an axial light-transmitting groove.

[0008] In one exemplary instance, the axial light-transmitting slot has a numerical aperture relative to the center of the ion trap that is greater than or equal to d / (3L);

[0009] Where d is half of the minimum distance between the radio frequency electrodes on both sides of the ion trapping region, and L is half of the length of the straight section of the radio frequency electrodes in the ion trapping region.

[0010] In one exemplary embodiment, the shape of the light-transmitting slot includes a radial shape extending axially. In another exemplary embodiment, the radial shape includes a trapezoidal or trumpet-shaped shape extending axially.

[0011] In one exemplary instance, the integrated substrate includes a beam and an electrode region, the electrode region having a thickness less than the beam thickness;

[0012] The electrode region includes a region for setting the DC electrode and the radio frequency electrode, and a region for trapping ions; the crossbeam is located at both ends of the axial direction in the regions other than the electrode region, and the crossbeam is provided with an opening of a preset size, through which the light-transmitting slot passes.

[0013] In one exemplary instance, the integrated substrate is made of a material that is insulating at the operating temperature. Its surface includes conductive electrodes made of a metallic conductor.

[0014] In one exemplary instance, the material of the integrated substrate includes one or any combination of the following: ceramic, sapphire, silicon, and silicon nitride.

[0015] On the other hand, embodiments of the present invention also provide a quantum computing device, including the ion trap described above.

[0016] The technical solution of this application includes: an integrated substrate, and radio frequency electrodes and DC electrodes fabricated on the integrated substrate; wherein, the integrated substrate has an axially open light-transmitting slot. The ion trap of this invention is based on an integrated substrate design, eliminating the problem of misalignment caused by temperature changes, allowing the ion trap to be applied in low-temperature environments; the open slot provides the ion trap with open axial light transmission, resulting in a higher numerical aperture and increased light transmission freedom, thus supporting the large-scale application of quantum computing.

[0017] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the description, claims, and drawings. Attached Figure Description

[0018] The accompanying drawings are provided to further understand the technical solutions of the present invention and constitute a part of the specification. They are used together with the embodiments of this application to explain the technical solutions of the present invention and do not constitute a limitation on the technical solutions of the present invention.

[0019] Figure 1 This is a structural block diagram of the ion trap according to an embodiment of the present invention;

[0020] Figure 2 This is a schematic diagram of a trapped ion crystal according to an embodiment of the present invention;

[0021] Figure 3 This is a schematic cross-sectional view of the light-transmitting slot according to an embodiment of the present invention;

[0022] Figure 4 This is a perspective view of the ion trap according to an embodiment of the present invention. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that, unless otherwise specified, the embodiments and features described in this application can be arbitrarily combined with each other.

[0024] The steps illustrated in the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. Furthermore, although a logical order is shown in the flowchart, in some cases the steps shown or described may be performed in a different order than that presented here.

[0025] Figure 1 This is a structural block diagram of the ion trap according to an embodiment of the present invention, as shown below. Figure 1 As shown, it includes: an integrated substrate, radio frequency electrodes and DC electrodes fabricated on the integrated substrate; wherein, the integrated substrate has an axial light-transmitting groove.

[0026] The ion trap in this invention is based on an integrated substrate design, which eliminates the problem of misalignment caused by temperature changes, allowing the ion trap to be applied in low-temperature environments. The open slots enable the ion trap to achieve open axial light transmission, with a higher numerical aperture (NA, a dimensionless number used to measure the angular range of light that the system can collect), increasing the degree of freedom of light transmission in the ion trap and providing support for the large-scale application of quantum computing.

[0027] Reference Figure 1 In this embodiment of the invention, the ion-trapping region has radio frequency electrodes that are roughly parallel to each other, with the parallel distribution direction being the axial direction. The ion-trapping region is located between the radio frequency electrodes and extends to both sides along the axial direction, communicating with the light-transmitting slots at both ends of the axial direction. By means of the light-transmitting slots, an unobstructed axial light-transmitting path can be obtained, so the laser can be irradiated from the axial direction to manipulate the ions.

[0028] In one exemplary instance, the ion trap in this embodiment of the invention is used to trap a two-dimensional ion lattice.

[0029] In one exemplary instance, embodiments of the present invention can be applied to the trapping of ion crystals including one-dimensional, two-dimensional, and three-dimensional crystals, providing a structural basis for increasing the scale of trapping of one-dimensional, two-dimensional, and three-dimensional ion crystals.

[0030] In one exemplary instance, the DC electrode in this embodiment of the invention comprises two or more pairs of segmented electrodes.

[0031] This invention, in accordance with related technologies, involves providing radio frequency (RF) electrodes along the axial direction of an integrated substrate; segmented DC electrodes are disposed on both sides of the RF electrodes, arranged sequentially along the axial direction, also in accordance with related technologies. In one exemplary embodiment, this invention... Figure 1 The radio frequency electrode in the schematic diagram can be two unconnected radio frequency electrodes, or it can be a single electrode formed by connecting radio frequency electrode sheets at the bottom of the light-transmitting slot. Figure 2 This is a schematic diagram of a trapped ion crystal according to an embodiment of the present invention, as shown below. Figure 2 As shown, based on the radio frequency electrode and the segmented DC electrodes arranged on both sides of the radio frequency electrode, the embodiment of the present invention achieves the trapping of the ion crystal.

[0032] In one exemplary instance, the shape and size of each DC electrode in the DC electrode of the present invention can be designed and implemented with reference to related technologies, and the present invention does not limit this.

[0033] In this embodiment of the invention, multiple sets of independently controllable segmented DC electrodes are arranged on both sides of the radio frequency electrode, providing more degrees of freedom of manipulation and meeting the requirements for stable confinement and manipulation of large-scale multi-ion crystals.

[0034] In one exemplary instance, the numerical aperture of the axial light-transmitting slot relative to the center of the ion trap in an embodiment of the present invention is greater than or equal to d / (3L);

[0035] Where d is half of the minimum distance between the radio frequency electrodes on both sides of the ion trapping region, and L is half of the length of the straight section of the radio frequency electrodes in the ion trapping region.

[0036] See attached document Figure 1 In one exemplary embodiment of the present invention, the radio frequency electrodes are distributed approximately in parallel in the trapped ion region; at the axial light-transmitting slot, the distance between the radio frequency electrodes gradually changes, and 2L is the length of the parallel portion of the radio frequency electrodes in the trapped ion region.

[0037] In one exemplary embodiment, the slot shape of the present invention includes a radial shape extending axially. Here, a radial shape extending axially refers to a radial shape extending along the direction of the radio frequency electrode.

[0038] In one exemplary instance, the shape of the slot in the embodiment of the present invention can be other shapes, as long as axial light transmission can be achieved; in another exemplary instance, the embodiment of the present invention can select a slot shape that is easy to prepare based on the ease of preparation.

[0039] In one exemplary embodiment, the shape of the slot in this invention can be a trapezoid or a trumpet shape extending axially. In another exemplary embodiment, the radial shape extending axially in this invention can further include: a trapezoid that expands segmentally layer by layer, one or more trumpet shapes with progressively increasing curvature layer by layer, or a radial shape composed of one or more trapezoids and / or one or more trumpet shapes; the size of the trapezoid and the curvature of the trumpet shape can be analyzed and set by those skilled in the art. In one exemplary embodiment, the size of the slot in this invention can be determined by those skilled in the art based on the structural composition of the ion trap.

[0040] Figure 3 This is a schematic cross-sectional view of the light-transmitting slot according to an embodiment of the present invention, as shown below. Figure 3 As shown, in this embodiment of the invention, the ion trapping region of the integrated substrate of the ion trap extends to both sides, reaching the axial slots at both ends, forming an overall axially open structural feature. The ion crystal is trapped in the ion trapping region, and an unobstructed z-direction field of view (flux) can be obtained by means of the open axis, thereby obtaining additional degrees of freedom for optical operation.

[0041] In one exemplary embodiment, the radio frequency electrodes are positioned on both sides perpendicular to the substrate plane (along...). Figure 3 Segmented DC electrodes are arranged in both the y-direction and the mid-axis directions, thereby forming a stronger binding electric field in the direction perpendicular to the plane of the integrated substrate. This is more conducive to the stable trapping of two-dimensional ion lattices, enabling the stable trapping and manipulation of large-scale multi-ion crystals. (Refer to...) Figure 3 The DC electrodes are positioned on the upper and lower sides of the RF electrodes, perpendicular to the substrate plane. Figure 3 (in the y-direction); In this embodiment of the invention, by adjusting the voltage parameters of the electrode through the above structure, it is also possible to freely switch between one-dimensional, two-dimensional or three-dimensional ionic crystals.

[0042] In one exemplary instance, the embodiments of the present invention refer to a related design in which the DC electrodes in the ion trap are insulated from each other, and the radio frequency electrode is insulated from the DC electrode.

[0043] In one exemplary embodiment, the radio frequency electrode and the DC electrode of the present invention are made of a metallic conductor and are disposed on an integrated substrate surface.

[0044] In one exemplary instance, the material of the integrated substrate is: a material that is insulating at the operating temperature;

[0045] In one exemplary instance, the material of the integrated substrate includes one or any combination of the following: ceramic, sapphire, silicon, and silicon nitride, etc.

[0046] In one exemplary instance, the integrated substrate of this embodiment of the invention includes: a beam and an electrode region, wherein the thickness of the electrode region is less than the thickness of the beam;

[0047] The electrode area includes: an area for setting DC electrodes and radio frequency electrodes, and an ion trapping area; the crossbeam is located at both ends of the axial direction in areas other than the electrode area, and the crossbeam is provided with openings of a preset size, through which light-transmitting slots pass.

[0048] The embodiments of the present invention provide a physical basis for the fabrication of an integrated ion trap by setting a crossbeam structure.

[0049] Figure 4 This is a perspective view of the ion trap according to an embodiment of the present invention, as shown below. Figure 4 As shown, the thinner central region of the ion trap is the electrode region, which houses a DC electrode, a radio frequency electrode, and a trapped ion region. The thicker regions distributed at both axial ends of the integrated substrate form crossbeams. These crossbeams have openings of a predetermined size, through which light-transmitting slots pass. The crossbeams physically connect the electrode regions on both sides of the trapped ion region, making the entire ion trap a single unit. It should be noted that the shape of the crossbeam shown in the figure is merely an example; the embodiment of this invention does not limit the shape of the crossbeam. Any shape that includes the aforementioned openings and can connect the electrode regions on both sides of the trapped ion region is acceptable. Furthermore, although the crossbeam shown in the figure is located at the outermost axial ends, the embodiment of this invention does not limit the position of the crossbeam.

[0050] This invention also provides a quantum computing device, including an ion trap, which includes an integrated substrate, a radio frequency electrode and a DC electrode fabricated on the integrated substrate; wherein the integrated substrate has an axial light-transmitting slot.

[0051] The ion trap in this invention is based on an integrated substrate design, which eliminates the problem of misalignment caused by temperature changes, allowing the ion trap to be used in low-temperature environments. The open slots enable the ion trap to achieve open axial light transmission, with a higher numerical aperture, increasing the degree of freedom of light transmission and providing support for the large-scale application of quantum computing.

[0052] In one exemplary instance, the ion trap in this embodiment of the invention is used to trap a two-dimensional ion lattice.

[0053] In one exemplary instance, embodiments of the present invention can be applied to the trapping of ion crystals including one-dimensional, two-dimensional, and three-dimensional crystals, providing a structural basis for increasing the scale of trapping of one-dimensional, two-dimensional, and three-dimensional ion crystals.

[0054] In one exemplary instance, the DC electrode in this embodiment of the invention includes:

[0055] Two or more pairs of segmented DC electrodes.

[0056] In accordance with related technologies, the embodiments of the present invention provide radio frequency electrodes in the axial direction of an integrated substrate; segmented DC electrodes are provided on both sides of the radio frequency electrodes in accordance with related technologies, arranged from top to bottom in the axial direction.

[0057] In one exemplary instance, the shape and size of each DC electrode in the DC electrode of the present invention can be designed and implemented with reference to related technologies, and the present invention does not limit this.

[0058] In this embodiment of the invention, multiple sets of independently controllable segmented DC electrodes are arranged on both sides of the radio frequency electrode, providing more degrees of freedom of manipulation and meeting the requirements for stable confinement and manipulation of large-scale multi-ion crystals.

[0059] In one exemplary embodiment, the slot shape of the present invention includes: an axially extending radial shape. Here, an axially extending radial shape refers to a radial shape along the extension direction of the radio frequency electrode.

[0060] In one exemplary instance, the shape of the slot in the embodiment of the present invention can be other shapes, as long as axial light transmission can be achieved; in another exemplary instance, the embodiment of the present invention can select a slot shape that is easy to prepare based on the ease of preparation.

[0061] In one exemplary embodiment, the shape of the slot in this invention can be a trapezoid or a trumpet shape extending axially. In another exemplary embodiment, the radial shape extending axially in this invention can further include: a trapezoid that expands segmentally layer by layer, one or more trumpet shapes with progressively increasing curvature, or a radial shape composed of one or more trapezoids and / or one or more trumpet shapes. The dimensions of the trapezoids and the curvature of the trumpet shapes can be analyzed and set by those skilled in the art. In one exemplary embodiment, the dimensions of the slot in this invention can be determined by those skilled in the art based on the structural composition of the ion trap.

[0062] In one exemplary instance, the embodiments of the present invention refer to a related design in which the DC electrodes in the ion trap are insulated from each other, and the radio frequency electrode is insulated from the DC electrode.

[0063] In one exemplary embodiment, the radio frequency electrode and the DC electrode of the present invention are made of a metallic conductor and are disposed on an integrated substrate surface.

[0064] In one exemplary instance, the material of the integrated substrate is: a material that is insulating at the operating temperature;

[0065] In one exemplary instance, the material of the integrated substrate includes one or any combination of the following: ceramic, sapphire, silicon, and silicon nitride, etc.

[0066] In one exemplary instance, the integrated substrate of this embodiment of the invention includes: a beam and an electrode region, wherein the thickness of the electrode region is less than the thickness of the beam;

[0067] The electrode area includes: an area for setting DC electrodes and radio frequency electrodes, and an ion trapping area; the crossbeam is located at both ends of the axial direction in areas other than the electrode area, and the crossbeam is provided with openings of a preset size, through which light-transmitting slots pass.

[0068] The embodiments of the present invention provide a physical basis for the fabrication of an integrated ion trap by setting a crossbeam structure.

[0069] It will be understood by those skilled in the art that all or some of the steps, systems, or apparatuses disclosed above, and their functional modules / units, can be implemented as software, firmware, hardware, or suitable combinations thereof. In hardware implementations, the division between functional modules / units mentioned above does not necessarily correspond to the division of physical components; for example, a physical component may have multiple functions, or a function or step may be performed collaboratively by several physical components. Some or all components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application-specific integrated circuit (ASIC). Such software may be distributed on a computer-readable medium, which may include computer storage media (or non-transitory media) and communication media (or transient media). As is known to those skilled in the art, the term computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data). Computer storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and can be accessed by a computer. Furthermore, it is well known to those skilled in the art that communication media typically contain computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and may include any information delivery medium.

Claims

1. An ion trap, comprising: An integrated substrate, on which radio frequency electrodes and DC electrodes are fabricated; wherein, the integrated substrate has an axial light-transmitting groove; Wherein, the numerical aperture of the axial light-transmitting slot relative to the center of the ion trap is greater than or equal to d / (3L); d is half of the minimum distance between the radio frequency electrodes on both sides of the ion trapping region of the ion trap, and L is half of the length of the straight section of the radio frequency electrode in the ion trapping region of the ion trap.

2. The ion trap according to claim 1, characterized in that, The shape of the light-transmitting slot includes: a radial shape extending along the axial direction.

3. The ion trap according to claim 2, characterized in that, The radial shape includes a trapezoid or trumpet shape extending along the axial direction.

4. The ion trap according to any one of claims 1 to 3, characterized in that, The integrated substrate includes a crossbeam and an electrode region, wherein the thickness of the electrode region is less than the thickness of the crossbeam. The electrode region includes a region for setting the DC electrode and the radio frequency electrode, and a region for trapping ions; the crossbeam is located at both ends of the axial direction in the regions other than the electrode region, and the crossbeam is provided with an opening of a preset size, through which the light-transmitting slot passes.

5. The ion trap according to any one of claims 1-3, characterized in that, The material of the integrated substrate is an insulating material at the operating temperature.

6. The ion trap according to claim 5, characterized in that, The material of the integrated substrate includes one or any combination of the following: ceramic, sapphire, silicon, and silicon nitride.

7. A quantum computing device comprising an ion trap as described in any one of claims 1-6.

Images