Method of manufacturing an electronic device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INNOLUX CORP
- Filing Date
- 2022-05-12
- Publication Date
- 2026-08-07
AI Technical Summary
因此,若使用者为了外观可靠度或者是电性需求而需要改变芯片在目标基板上的角度时,则需要大动作地先暂停生产线来切换机台的设定等,需耗费较高的成本
[0005]基于上述,在本揭露的实施例中,依序转移至第二基板上的第一芯片及第二芯片,其侧边的延伸方向与第二基板的边界的延伸方向之间形成不同角度的夹角。相较于现有技术中转移后的芯片与基板之间仅具有单一角度而言,本揭露的电子装置的制作方法,可满足使用者的多样化需求。
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Figure CN115910891B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to a method for manufacturing an electronic device, and more particularly to a method for manufacturing an electronic device that can meet the diverse needs of users. Background Technology
[0002] Because current transfer equipment can only move in the XY direction, the temporary substrate, which has an off-center film (e.g., a blue film) and carries the chip, moves at a fixed angle. Therefore, when transferring the chip from the temporary substrate to the target substrate, the chip has only a single angle on the target substrate. Consequently, if the user needs to change the angle of the chip on the target substrate for reasons such as appearance reliability or electrical requirements, it requires a significant shutdown of the production line to change the equipment settings, incurring high costs. Summary of the Invention
[0003] This disclosure relates to a method for manufacturing an electronic device in which the extension directions of the sides of multiple transferred chips can form multiple different angles with the extension direction of the boundary of the substrate, thereby meeting the diverse needs of users.
[0004] According to an embodiment of this disclosure, a method for manufacturing an electronic device includes the following steps: A first substrate comprising a plurality of chips is provided. A second substrate is provided. A transfer procedure is performed to sequentially transfer a first chip and a second chip onto the second substrate. The second chip is adjacent to the first chip. A first angle is formed between a first extending direction of a first side of the first chip and an extending direction of a first boundary of the second substrate. A second angle is formed between a second extending direction of a second side of the second chip and an extending direction of the first boundary of the second substrate. The first angle is different from the second angle.
[0005] Based on the above, in the embodiments disclosed herein, the first chip and the second chip, sequentially transferred to the second substrate, form different angles between their side extension directions and the extension direction of the boundary of the second substrate. Compared to the prior art where the transferred chip and the substrate have only a single angle, the electronic device manufacturing method disclosed herein can meet the diverse needs of users.
[0006] To make the above-mentioned features and advantages disclosed herein more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description
[0007] Figure 1A This is a schematic diagram of a method for manufacturing an electronic device according to an embodiment of the present disclosure;
[0008] Figure 1B yes Figure 1A A schematic diagram of the first chip, the second chip, and the third chip on the second substrate;
[0009] Figure 2 This is a schematic diagram of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
[0010] Figure 3 This is a schematic diagram of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
[0011] Figure 4 This is a schematic diagram of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
[0012] Figure 5 This is a schematic diagram of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
[0013] Figure 6 This is a schematic diagram of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
[0014] Figure 7 This is a schematic diagram of a method for manufacturing an electronic device according to another embodiment of the present disclosure;
[0015] Figure 8 This is a schematic diagram of an electronic device according to another embodiment of the present disclosure.
[0016] Explanation of reference numerals in the attached figures
[0017] 10, 10': First substrate;
[0018] 20: Second substrate;
[0019] 30: Pick-up and placement device;
[0020] 40, 52: Turntable;
[0021] 50: Robotic arm;
[0022] 100: Electronic devices;
[0023] 110: Chip;
[0024] 112: First chip;
[0025] 114: Second chip;
[0026] 116: Third chip;
[0027] 120: Metal layer;
[0028] 125: Dielectric layer;
[0029] 130: Connecting pad;
[0030] 140: Spacer;
[0031] 150: Protective layer;
[0032] 160: Seal;
[0033] A1: First included angle;
[0034] A2: The second included angle;
[0035] A3: The third included angle;
[0036] B: First boundary;
[0037] D: Direction of extension;
[0038] D1: First extension direction;
[0039] D2: Second extension direction;
[0040] D3: Third extension direction;
[0041] H: Opening;
[0042] S1: First side;
[0043] S2: Second side;
[0044] S3: Third side;
[0045] T1, T2: Solder. Detailed Implementation
[0046] Reference will now be made in detail to the exemplary embodiments disclosed herein, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.
[0047] This disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for ease of understanding and for the sake of brevity, many of the drawings in this disclosure depict only a portion of the electronic device, and certain components in the drawings are not drawn to scale. Furthermore, the number and dimensions of the components in the drawings are for illustrative purposes only and are not intended to limit the scope of this disclosure.
[0048] Throughout this specification and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same elements. This document is not intended to distinguish between elements that function identically but have different names.
[0049] In the following description and claims, the words “containing” and “including” are open-ended terms, and therefore should be interpreted as “containing but not limited to…”.
[0050] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used in the embodiments to describe the relative relationship of one element of the figures to another element. It is understood that if the apparatus in the figures is flipped so that it is upside down, the element described as being on the "below" side will become the element on the "above" side.
[0051] In some embodiments disclosed herein, terms such as "connection" and "interconnection," unless specifically defined, may refer to two structures being in direct contact, or to two structures not being in direct (indirect) contact, wherein other structures are disposed between the two structures. Furthermore, these terms regarding engagement and connection may also include situations where both structures are movable or both structures are fixed. In addition, the term "coupling" includes the transfer of energy between two structures through direct or indirect electrical connection, or the transfer of energy between two separate structures through mutual induction.
[0052] It should be understood that when an element or membrane is referred to as being "on" or "connected" to another element or membrane, it can be directly on or directly connected to that other element or membrane, or there may be an inserted element or membrane between them (indirect cases). Conversely, when an element is referred to as being "directly" on or "directly connected" to another element or membrane, there may be no inserted element or membrane between them.
[0053] The terms “approximately,” “equal to,” “same,” “substantially,” or “roughly” are generally interpreted as being within 20% of a given value or range, or as being within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.
[0054] As used herein, the terms “film” and / or “layer” can refer to any continuous or discontinuous structure and material (such as materials deposited by the methods disclosed herein). For example, films and / or layers can include two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and / or molecular clusters. Films or layers may contain materials or layers with pinholes, and may be at least partially continuous.
[0055] Although the terms first, second, third… can be used to describe multiple components, the components are not limited to these terms. These terms are used only to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but rather replaced by first, second, third… in the order of the elements declared in the claims. Therefore, in the following description, a first component may be a second component in the claims.
[0056] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined herein.
[0057] It should be understood that the technical features of several different embodiments can be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of this disclosure.
[0058] The electronic devices disclosed herein may include, but are not limited to, display devices, antenna devices, sensing devices, light-emitting devices, or splicing devices. Electronic devices may include bendable or flexible electronic devices. Electronic devices may include electronic components. Electronic components may include passive components, active components, or combinations thereof, such as capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, sensors, microelectromechanical systems (MEMS) components, liquid crystal chips, etc., but are not limited to these. Diodes may include light-emitting diodes or non-light-emitting diodes. Diodes include PN junction diodes, PIN diodes, or constant current diodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), sub-millimeter light-emitting diodes (mini LEDs), micro LEDs, quantum dot LEDs, fluorescent, phosphorescent, or other suitable materials, or combinations thereof, but are not limited to these. Sensors may include, for example, capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (FPS), touch sensors, antennas, or pen sensors, but are not limited to these. The following description uses a display device as an example of an electronic device to illustrate the contents of this disclosure, but this disclosure is not limited thereto.
[0059] Reference will now be made in detail to the exemplary embodiments disclosed herein, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.
[0060] Figure 1A This is a schematic diagram of a method for manufacturing an electronic device according to an embodiment of the present disclosure. Figure 1B yes Figure 1A A schematic diagram of the first chip, the second chip, and the third chip on the second substrate.
[0061] Please refer to this first. Figure 1A Regarding the method of manufacturing the electronic device in this embodiment, firstly, a first substrate 10 including a plurality of chips 110 is provided. The first substrate 10 may be, for example, a wafer, a glass substrate, or a polyimide (PI) substrate, but is not limited thereto. In one embodiment, a release film (e.g., a blue film) may be disposed on the first substrate 10, wherein the release film is located between the first substrate 10 and the chips 110, facilitating easy separation of the chips from the first substrate 10. Therefore, the first substrate 10 can be regarded as a temporary substrate. In one embodiment, the first substrate 10 may have chamfered corners, rounded corners, or other arbitrary shapes. The chips 110 may be packaged or bare dies, and may be, for example, capacitors, resistors, inductors, variable capacitors, filters, diodes, transistors, sensors, microelectromechanical systems (MEMS) components, liquid crystal chips, etc., but are not limited thereto. Diodes may include light-emitting diodes or non-light-emitting diodes. Diodes include PN junction diodes, PIN diodes, or constant current diodes. Light-emitting diodes (LEDs) may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, quantum dot LEDs, fluorescent, phosphorescent, or other suitable materials, or combinations thereof, but are not limited thereto. Sensors may include, for example, capacitive sensors, optical sensors, electromagnetic sensors, fingerprint sensors (FPS), touch sensors, antennas, or pen sensors, but are not limited thereto.
[0062] Next, please refer to Figure 1A The system provides a second substrate 20 and a pickup and placement device 30, wherein the first substrate 10 and the second substrate 20 may be located on opposite sides of the pickup and placement device 30, but are not limited thereto. Here, the first substrate 10 and the second substrate 20 are disposed, for example, on an XY plane, and the pickup and placement device 30 may move, for example, in the XY plane. The second substrate 20 may be, for example, a wafer, a glass substrate, or a polyimide (PI) substrate, but is not limited thereto. In one embodiment, the second substrate 20 may have chamfered corners, rounded corners, or other arbitrary shapes.
[0063] Next, a transfer procedure is performed to sequentially transfer the first chip 112 and the second chip 114 from chip 110 to the second substrate 20, wherein the second chip 114 on the second substrate 20 is adjacent to the first chip 112. Therefore, the second substrate 20 can be considered as a target substrate. The shape of the first chip 112 and the second chip 114 may be the same or different. Here, the shape of the first chip 112 is, for example, a rounded rectangle, and the shape of the second chip 114 is, for example, a rhombus, but it is not limited thereto. Here, the transfer procedure is, for example, rotating the first substrate 10, that is, rotating the first substrate 10 relative to the X-axis, while the second substrate 20 remains stationary.
[0064] Furthermore, please also refer to Figure 1A and Figure 1BAfter the first substrate 10, including chip 110, is rotated by an angle relative to the X-axis, the pick-and-place device 30 picks up the first chip 112 from the first substrate 10 and places the first chip 112 on the second substrate 20. Next, after the first substrate 10 is rotated by another angle relative to the X-axis, the pick-and-place device 30 picks up the second chip 114 from the first substrate 10 and places the second chip 114 on the second substrate 20 adjacent to the first chip 112. At this time, a first angle A1 is formed between the first extending direction D1 of the first side S1 (i.e., the long side) of the first chip 112 and the extending direction D of the first boundary B of the second substrate 20. A second angle A2 is formed between the second extending direction D2 of the second side S2 of the second chip 114 and the extending direction D of the first boundary B of the second substrate 20. Specifically, the first angle A1 is different from the second angle A2. Here, the first angle A1 is, for example, greater than 0 and less than or equal to 90 degrees, while the second angle A2 is, for example, greater than 0 and less than or equal to 90 degrees. The difference between the first included angle A1 and the second included angle A2 is, for example, less than 90 degrees. In one embodiment, the difference between the first included angle A1 and the second included angle A2 is, for example, less than 45 degrees. In another embodiment, the difference between the first included angle A1 and the second included angle A2 is, for example, less than 20 degrees. Here, boundary B may be, for example, the long side of the substrate, and the side edge may be, for example, the long side of the chip, or when the side length of the chip is the same, the side adjacent to the long side of the substrate is used as the reference, but this is not a limitation.
[0065] Next, please refer to the following: Figure 1A and Figure 1B Alternatively, the above steps can be repeated to further transfer the third chip 116 from chip 110 to the second substrate 20, wherein the third chip 116 is adjacent to the second chip 114, and the second chip 114 is located between the first chip 112 and the third chip 116, but this is not a limitation. The shape of the third chip 116 is, for example, triangular, but this is not a limitation. A third angle A3 is formed between the third extension direction D3 of the third side S3 of the third chip 116 and the extension direction D of the first boundary B of the second substrate 20, and the third angle A3 is different from the first angle A1 and the second angle A2. Here, the third angle A3 is, for example, greater than 0 and less than or equal to 90 degrees. The difference between the first angle A1, the second angle A2 and the third angle A3 is, for example, less than 90 degrees. In one embodiment, the difference between the first angle A1, the second angle A2 and the third angle A3 is, for example, less than 45 degrees. In another embodiment, the difference between the first included angle A1, the second included angle A2 and the third included angle A3 is, for example, less than 20 degrees.
[0066] In short, in this embodiment, the first chip 112, the second chip 114, and the third chip 116, sequentially transferred to the second substrate 20, form different angles A1, A2, and A3 between their first side S1 (first extending direction D1), second side S2 (second extending direction D2), and third side S3 (third extending direction D3) and the extending direction D of the first boundary B of the second substrate 20. Compared to the prior art where the transferred chip and substrate have only a single angle, the electronic device manufacturing method disclosed herein can meet the diverse needs of users who require changing the angle of the chip on the target substrate for appearance reliability or electrical requirements.
[0067] It should be noted that the following embodiments use the component reference numerals and some content from the foregoing embodiments, with the same reference numerals used to represent the same or similar components, and descriptions of the same technical content omitted. For explanations of the omitted parts, please refer to the foregoing embodiments; these will not be repeated in the following embodiments.
[0068] Figure 2 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 1A and Figure 2 The method for manufacturing the electronic device in this embodiment is similar to... Figure 1A The manufacturing method is similar to that of the electronic device, with the difference being that in this embodiment, after providing the second substrate 20 and before the transfer process, a metal layer 120 and an opening H are formed. The metal layer 120 is located between the second substrate 20 and the first chip 112, and the orthographic projection of the first chip 112 on the second substrate 20 overlaps with the opening H. Furthermore, the metal layer 120 may be formed on the second substrate 20 and covered by a dielectric layer 125, wherein the dielectric layer 125 has an opening H, and the first chip 112 can be electrically connected to the metal layer 120 by being disposed in the opening H of the dielectric layer 125 through solder T1. Next, a pad 130 may be further formed between the second chip 114 and the metal layer 120, wherein the first chip 112 can be electrically connected to the pad 130 through solder T2, and the second chip 114 is directly disposed on the pad 130. Here, the first chip 112 is, for example, a light-emitting diode, and the second chip 114 is, for example, an active element, such as a thin-film transistor, but is not limited thereto. Additionally, the metal layer 120 is, for example, copper (Cu), titanium (Ti), or aluminum (Al), but is not limited thereto.
[0069] Furthermore, a spacer 140 is formed on the dielectric layer 125. Next, a protective layer 150 is formed on the first chip 112 and the second chip 114 to protect them. The spacer 140 maintains the distance between the protective layer 150 and the first chip 112 and the second chip 114. Finally, a seal 160 is formed around the second substrate 20 and around the protective layer 150 to prevent moisture and oxygen from corroding the first chip 112, the second chip 114, the metal layer 120, and the pad 130. Thus, the electronic device 100 is completed. Here, the electronic device 100 may include a display device, an antenna device, a sensing device, a light-emitting device, a packaging device, or a splicing device, but is not limited thereto. According to another embodiment, the seal 160 may be formed around the second substrate 20 first, and then the protective layer 150 may be formed on the second substrate 20 and the spacer 140, but is not limited thereto.
[0070] Figure 3 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 1A and Figure 3 The method for manufacturing the electronic device in this embodiment is similar to... Figure 1A The manufacturing methods of the electronic devices are similar, but the difference is that in this embodiment, the first substrate 10 and the second substrate 20 are disposed on the XZ plane, and the pickup and placement device 30 can move, for example, in the XZ plane, and the transfer procedure is, for example, rotating the first substrate 10, that is, rotating the first substrate 10 relative to the Z axis, while the second substrate 20 remains stationary.
[0071] Figure 4 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 1A and Figure 4 The method for manufacturing the electronic device in this embodiment is similar to... Figure 1A The manufacturing methods of the electronic devices are similar, but the difference is that in this embodiment, the first substrate 10 and the second substrate 20 are disposed on the XY plane, and the pickup and placement device 30 can move in the XY plane, for example, and the transfer procedure is, for example, rotating the second substrate 20, that is, rotating the second substrate 20 relative to the X-axis, while the first substrate 10 remains stationary.
[0072] Figure 5 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 1A and Figure 5 The method for manufacturing the electronic device in this embodiment is similar to... Figure 1AThe manufacturing methods of the electronic devices are similar, but the difference is that in this embodiment, the first substrate 10 and the second substrate 20 are disposed on the XZ plane, and the pickup and placement device 30 can move, for example, in the XZ plane, and the transfer procedure is, for example, rotating the second substrate 20, that is, rotating the second substrate 20 relative to the Z axis, while the first substrate 10 remains stationary.
[0073] Figure 6 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 1A and Figure 6 The method for manufacturing the electronic device in this embodiment is similar to... Figure 1A The manufacturing methods are similar to those of other electronic devices, but the difference lies in the following: In this embodiment, the first substrate 10 and the second substrate 20 are disposed on the XY plane, and the pickup and placement device 30 can move, for example, in the XY plane. The transfer process includes rotating a turntable 40 disposed on the pickup and placement device 30. That is, the orientation angle of the first chip 112, the second chip 114, and the third chip 116 after transfer onto the second substrate 20 can be changed by rotating the turntable 40. In other words, during the transfer process, the first substrate 10 and the second substrate 20 remain stationary.
[0074] Figure 7 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 6 and Figure 7 The method for manufacturing the electronic device in this embodiment is similar to... Figure 6 The manufacturing methods of the electronic devices are similar, but the difference lies in the fact that, in this embodiment, the structural form of the first substrate 10' is different. Figure 6 The first substrate 10' is specifically a flexible substrate, such as tape, but is not limited thereto.
[0075] Figure 8 This is a schematic diagram illustrating a method for manufacturing an electronic device according to another embodiment of this disclosure. Please also refer to... Figure 1A and Figure 8 The method for manufacturing the electronic device in this embodiment is similar to... Figure 1A The manufacturing methods of the electronic devices are similar, but the difference lies in the following: In this embodiment, the picking and placing device 30 includes multiple robotic arms 50, and each robotic arm 50 has a turntable 52 at its front end. The transfer process includes rotating the turntable 52 of the robotic arm 50. In one embodiment, for example, the turntable 52 of each robotic arm 50 can be independently controlled so that these turntables 52 can rotate at different angles to change the configuration angle of the first chip 112, the second chip 114, and the third chip 116 after they are transferred onto the second substrate 20. This can speed up the picking and placing process and shorten production time.
[0076] In summary, in the embodiments disclosed herein, the first chip and the second chip, sequentially transferred to the second substrate, form different angles between their side extension directions and the extension direction of the boundary of the second substrate. Compared to the prior art where the transferred chip and substrate have only a single angle, the electronic device manufacturing method disclosed herein can meet the diverse needs of users.
[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions disclosed herein, and are not intended to limit them. Although the present disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments disclosed herein.
Claims
1. A method for manufacturing an electronic device, characterized in that, include: A first substrate comprising multiple chips is provided; Provide a second substrate; as well as A transfer procedure is performed to sequentially transfer a first chip and a second chip from the plurality of chips to a second substrate, wherein the second chip is adjacent to the first chip, a first angle is formed between the first extending direction of the first side of the first chip and the extending direction of the first boundary of the second substrate, and a second angle is formed between the second extending direction of the second side of the second chip and the extending direction of the first boundary of the second substrate, and the first angle is different from the second angle, wherein the transfer procedure includes rotating the first substrate, rotating the second substrate, or rotating the turntable of a robotic arm; A protective layer is formed on the first chip and the second chip; and A seal is formed between the periphery of the second substrate and the periphery of the protective layer.
2. The method for manufacturing an electronic device according to claim 1, characterized in that, Also includes: A third chip from the plurality of chips is transferred to the second substrate, the third chip being adjacent to the second chip, wherein a third extension direction of the third side of the third chip forms a third angle with the extension direction of the first boundary of the second substrate, and the third angle is different from the first angle and the second angle.
3. The method for manufacturing an electronic device according to claim 1, characterized in that, The difference between the first included angle and the second included angle is less than 90 degrees.
4. The method for manufacturing an electronic device according to claim 1, characterized in that, Also includes: A metal layer and an opening are formed, wherein the metal layer is located between the second substrate and one of the first chip and the second chip, and the orthogonal projection of the first chip and the second chip on the second substrate overlaps with the opening.
5. The method for manufacturing an electronic device according to claim 4, characterized in that, Also includes: A pad is formed between the metal layer and another of the first chip and the second chip.
Citation Information
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