A millimeter wave reconfigurable cascode amplifier and a reconfigurable method thereof

Abstract

The application relates to a millimeter wave reconfigurable common-source common-gate amplifier and a reconfigurable method thereof, which comprises an input reconfigurable matching network, a common-source common-gate transistor and an output reconfigurable matching network. The millimeter wave reconfigurable common-source common-gate amplifier of the application realizes impedance and noise matching of different frequency bands by reconfiguring the capacitance value of the input matching network and the inductance value of the output matching network, and simultaneously combines a transformer coupling gain promotion structure to make different frequency bands have larger amplification gains. The millimeter wave reconfigurable common-source common-gate amplifier circuit structure and the reconfigurable method of the application are simple and suitable for use in a multi-frequency band millimeter wave transceiver system. A conventional millimeter wave amplifier works at a fixed frequency, which limits the application in a multi-frequency communication system.

Description

Technical Field

[0001] This invention relates to a millimeter-wave reconfigurable common-source common-gate amplifier that achieves signal output in different frequency bands through a reconfigurable structure and reconfigurable method, and is used in microwave and millimeter-wave chip circuits, belonging to the field of amplifier technology. Background Technology

[0002] Millimeter-wave frequencies are characterized by high frequency, wide bandwidth, and high transmission speed, making them widely applicable in fields such as communications and radar. In recent years, with the rapid development of wireless communication technology, the requirements for millimeter-wave devices have become increasingly stringent, necessitating continuous research and development of higher-frequency millimeter-wave devices to meet the demands of wireless communication technology. To achieve higher communication capacity, millimeter-wave communication typically employs multiple frequency bands to expand the communication bandwidth. For example, fifth-generation (5G) mobile communication primarily uses the 24–29.5 GHz and 37–43 GHz bands in the millimeter-wave frequency band, and even higher millimeter-wave bands such as the V-band (50–75 GHz) and E-band (60–90 GHz).

[0003] Millimeter-wave amplifiers, including low-noise amplifiers and power amplifiers, are key modules in millimeter-wave transceiver front-ends. While various millimeter-wave amplifier circuits operating at different frequency bands have been implemented, most designs operate at fixed frequencies, and very few millimeter-wave circuits can amplify signals across multiple frequency bands. When future wireless communication systems are expected to operate on multiple frequency bands to achieve greater communication capacity and more flexible networking, using millimeter-wave amplifier circuits operating on multiple fixed frequency bands would lead to more complex communication system structures and higher costs and power consumption, making them unsuitable for multi-frequency millimeter-wave communication systems. Therefore, developing millimeter-wave reconfigurable amplifier circuits that can operate on different frequency bands will enable hardware circuit reuse, simplify the architecture of communication systems, and simultaneously reduce costs and power consumption. Summary of the Invention

[0004] To overcome the shortcomings of existing research, this invention provides a millimeter-wave reconfigurable common-source common-gate amplifier and its reconfigurable method, which realizes reconfigurable amplification of millimeter-wave signals in different frequency bands and exhibits good gain and noise performance.

[0005] A millimeter-wave reconfigurable cascode amplifier includes an input reconfigurable matching network, a cascode transistor, and an output reconfigurable matching network;

[0006] The reconfigurable input matching network consists of an input terminal, a first capacitor and a first switch connected in series, a transformer, a second capacitor, and a first resistor. The input terminal is connected to one end of the primary coil of the transformer, one end of the first capacitor, and the gate of the first transistor. The other end of the first capacitor is connected to one end of the first switch, and the other end of the first switch is grounded. The other end of the primary coil of the transformer is connected to one end of the parallel structure of the second capacitor and the first resistor. The other end of the second capacitor is grounded, and the other end of the first resistor is connected to a DC power supply to provide a bias voltage to the gate of the first transistor. One end of the secondary coil of the transformer is connected to the source of the first transistor, and the other end is grounded.

[0007] The common-source common-gate transistor consists of a first transistor with a common source, a second transistor with a common gate, and a first inductor. The common-source common-gate transistor is connected to the input reconfigurable matching network through the gate and source of the first transistor, and is connected to one end of the first inductor through the drain. The other end of the first inductor is connected to the source of the second transistor. The gate of the second transistor is connected to a DC power supply to provide a bias voltage to the gate of the second transistor. The drain of the second transistor is connected to one end of the parallel structure of the third capacitor and the second inductor in the reconfigurable output matching network. The other end of the third capacitor is connected to the output terminal.

[0008] The reconfigurable output matching network consists of a second inductor, a third inductor, and a second switch in parallel. One end of the second inductor is connected to the drain of the second transistor, and the other end of the second inductor is connected to one end of the parallel structure of the second switch and the third inductor. The other end of the parallel structure of the second switch and the third inductor is connected to the drain bias voltage of the second transistor.

[0009] Preferably, the reconfigurable input matching network consists of an input terminal, a first capacitor and a first switch connected in series, a transformer, a second capacitor, and a first resistor. This structure enhances the reconfigurable gain by adding effective transconductance of the amplification stage transistor to the transformer coupling. The first switch is an NMOS transistor with its gate as the switch control terminal and its source and drain as the two ends of the switch. When the first switch is on, the NMOS transistor is equivalent to a resistor; when the first switch is off, the NMOS transistor is equivalent to a capacitor. The capacitance value of the input matching capacitor can be changed by switching the switch control signal, thereby achieving reconfigurable input matching of the amplifier.

[0010] Preferably, the reconfigurable output matching network consists of a second inductor, a third inductor, and a second switch connected in parallel. The second switch is an NMOS transistor with its gate as the switch control terminal and its source and drain as the two ends of the switch, respectively. When the second switch is on, the NMOS transistor is equivalent to a resistor, and when the second switch is off, the NMOS transistor is equivalent to a capacitor. By switching the switch control signal, the inductance value of the output matching inductor can be changed, thereby realizing reconfigurable matching at the amplifier output.

[0011] Preferably, the common-source and common-gate transistors are all NMOS type transistors with a gate length of 60nm, a gate width of 40μm, a gate bias voltage of 0.55V for the common-source transistor, a gate bias voltage of 1.6V for the common-gate transistor, and a drain bias voltage of 2V.

[0012] Preferably, the capacitor is a metal-oxide-metal (MOM) capacitor, which has an interdigitated structure, resulting in a high quality factor and low loss.

[0013] Preferably, the inductance values ​​of the first inductor, the second inductor, and the third inductor are 250pH, 200pH, and 180pH, respectively.

[0014] Preferably, the resistance value of the first resistor is greater than 5kΩ, and this resistor is used to provide a reference ground for DC while preventing AC leakage.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0016] This invention discloses a millimeter-wave reconfigurable cascode amplifier and its reconfigurable method, which can amplify and output millimeter-wave signals at different frequency bands. Its circuit structure multiplexing implementation method is highly suitable for use in multi-band millimeter-wave transceiver systems. The millimeter-wave reconfigurable cascode amplifier of this invention achieves impedance and noise matching at different frequency bands by reconfiguring the capacitance values ​​of the input matching network and the inductance values ​​of the output matching network respectively; simultaneously, combined with a transformer-coupled gain boost structure, it provides significant amplification gain across different frequency bands. The millimeter-wave reconfigurable cascode amplifier of this invention features a simplified circuit structure, convenient reconfigurable control, fewer components, and ease of implementation, effectively reducing cost and power consumption. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a structural diagram of a millimeter-wave reconfigurable cascode amplifier according to an embodiment of the present invention;

[0019] Figure 2 This is a first reconfigurable state equivalent circuit structure diagram according to an embodiment of the present invention;

[0020] Figure 3 This is a second reconfigurable state equivalent circuit structure diagram according to an embodiment of the present invention;

[0021] Figure 4 The image shows the simulated gain curve of the millimeter-wave reconfigurable common-source cascode amplifier according to an embodiment of the present invention. Detailed Implementation

[0022] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0023] like Figure 1 As shown, the millimeter-wave reconfigurable cascode amplifier includes an input reconfigurable matching network, a cascode transistor, and an output reconfigurable matching network.

[0024] The reconfigurable input matching network consists of an input terminal In, a capacitor C1 and a switch SW1 connected in series, a transformer T1, a capacitor C2, and a resistor R1. The input terminal In is connected to one end of the primary coil of transformer T1, one end of capacitor C1, and the gate of transistor M1. The other end of capacitor C1 is connected to one end of switch SW1, and the other end of switch SW1 is grounded. The other end of the primary coil of transformer T1 is connected to one end of the parallel connection of capacitor C2 and resistor R1. The other end of capacitor C2 is grounded, and the other end of resistor R1 is connected to a DC power supply VG to provide a bias voltage to the gate of transistor M1. One end of the secondary coil of transformer T1 is connected to the source of transistor M1, and the other end is grounded. Switch SW1 is an NMOS type switch; when switch SW1 is turned on, the switch is equivalent to resistor R. ON1 The equivalent capacitance of the series capacitor switch structure is C1, such as Figure 2 As shown; when switch SW1 is off, the switching transistor is equivalent to capacitor C. OFF1 The equivalent capacitances of the capacitor switch series structure are C1 and C2. OFF1 Two capacitors connected in series, such as Figure 3 As shown, the reconfigurable matching of the input network is achieved by changing the capacitance value of the input matching capacitor through a switching control signal, combined with a transformer structure.

[0025] The common-source cascode transistor consists of a common-source transistor M1, a common-gate transistor M2, and an inductor L1. The common-source cascode transistor is connected to the input reconfigurable matching network through the gate and source of transistor M1, and connected to one end of inductor L1 through its drain. The other end of inductor L1 is connected to the source of transistor M2, and the gate of transistor M2 is connected to a DC power supply V. CAS The gate of transistor M2 is provided with a bias voltage. The drain of transistor M2 is connected to one end of the parallel structure of capacitor C3 and inductor L2 in the reconfigurable output matching network. The other end of capacitor C3 is connected to the high-frequency output terminal Out.

[0026] The reconfigurable output matching network consists of inductors L2 and L3 connected in parallel and switch SW2. One end of inductor L2 is connected to the drain of transistor M2, and the other end of inductor L2 is connected to one end of the parallel structure of switch SW2 and inductor L3. The other end of the parallel structure of switch SW2 and inductor L3 is connected to the drain bias voltage V of transistor M2. D Switch SW2 uses an NMOS transistor. When switch SW2 is turned on, the transistor is equivalent to a resistor R. ON2 When inductor L2 is short-circuited, the total series inductance of the reconfigurable output matching network is L1, as follows: Figure 2 As shown; when switch SW2 is off, the switching transistor is equivalent to capacitor C. OFF2 Inductors L1 and L2 are connected in series, and the total series inductance of the reconfigurable output matching network is L1 + L2, as follows. Figure 3 As shown, the reconfigurable matching of the output network is achieved by changing the inductance value of the input matching inductor through a switching control signal.

[0027] The capacitors C1, C2, and C3 are MOM capacitors, which have an interdigitated structure, resulting in a high quality factor and low loss. Capacitor C1 and switch SW1 form a reconfigurable capacitor structure, capacitor C2 is a bypass capacitor, and capacitor C3 is a DC blocking capacitor.

[0028] The resistor R1 is a resistor with a large resistance value. This resistor R1 is used to provide a reference ground for DC and at the same time prevent AC leakage.

[0029] The millimeter-wave reconfigurable cascode amplifier reconstructs different input matching capacitor values ​​and output matching inductor values ​​in the input and output networks respectively to achieve impedance and noise matching in different frequency bands; at the same time, combined with the transformer-coupled gain boost structure, it enables large amplification gain in different frequency bands.

[0030] The present invention will be described using a millimeter-wave reconfigurable common-source cascode amplifier as an example.

[0031] The millimeter-wave reconfigurable cascode amplifier in the embodiment uses reconfigurable capacitor and reconfigurable inductor structures for its input and output matching networks, respectively, and is a single-stage amplifier circuit.

[0032] The millimeter-wave reconfigurable cascode amplifier in this embodiment is designed using a 65nm CMOS process. All cascode transistors are NMOS transistors with a gate length of 60nm and a gate width of 40μm. The gate bias voltage of the cascode transistor is 0.55V, the gate bias voltage of the common-gate transistor is 1.6V, and the drain bias voltage is 2V. Capacitor C1 has a capacitance of 66fF, capacitor C2 has a capacitance of 2pF, and capacitor C3 has a capacitance of 500fF. Inductors L1 and L2 have an inductance of 250pH, L2 has an inductance of 200pH, and L3 has an inductance of 180pH. Resistor R1 has a resistance of 8kΩ.

[0033] In this example, circuit simulation tools were used to design and simulate this millimeter-wave reconfigurable cascode amplifier. The full circuit simulation results, including actual passive and active device models, are as follows: Figure 4 As shown. When switch SW1 is on and switch SW2 is off, a first type of reconfigurable amplifier circuit is formed, which can achieve a gain of more than 8dB in the 25-28GHz frequency band; when switch SW1 is off and switch SW2 is on, a second type of reconfigurable amplifier circuit is formed, which can achieve a gain of more than 10dB in the 34-38GHz frequency band.

[0034] In practical applications, two-stage or even three-stage reconfigurable cascode amplifier structures can be used to achieve greater gain, thus better meeting the application requirements of millimeter-wave transceiver systems. For example, with proper design, a two-stage reconfigurable cascode amplifier structure can achieve a gain amplification of over 20dB in the two operating frequency bands mentioned above, as well as good noise figure and input / output matching performance.

[0035] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and these variations still fall within the protection scope of the present invention.

Claims

1. A millimeter-wave reconfigurable cascode amplifier, characterized in that: This includes input reconfigurable matching networks, cascode transistors, and output reconfigurable matching networks; The input reconfigurable matching network consists of an input terminal, a first capacitor and a first switch connected in series, a transformer, a second capacitor, and a first resistor. The input terminal is connected to one end of the primary coil of the transformer, the first capacitor, and the gate of the first transistor. The first capacitor is connected to the first switch at its other end, and the first switch is grounded at its other end. The other end of the primary coil of the transformer is connected to one end of the parallel structure of the second capacitor and the first resistor. The second capacitor is grounded at its other end, and the first resistor is connected to a DC power supply at its other end to provide a bias voltage to the gate of the first transistor. One end of the secondary coil of the transformer is connected to the source of the first transistor, and the other end is grounded. The common-source common-gate transistor consists of a first transistor with a common source, a second transistor with a common gate, and a first inductor. The common-source common-gate transistor is connected to the input reconfigurable matching network through the gate and source of the first transistor, and is connected to one end of the first inductor through the drain. The other end of the first inductor is connected to the source of the second transistor. The gate of the second transistor is connected to a DC power supply to provide a bias voltage to the gate of the second transistor. The drain of the second transistor is connected to one end of the parallel structure of the third capacitor and the second inductor in the reconfigurable output matching network. The other end of the third capacitor is connected to the output terminal. The reconfigurable output matching network consists of a second inductor, a third inductor, and a second switch connected in parallel. One end of the second inductor is connected to the drain of the second transistor, and the other end of the second inductor is connected to one end of the parallel structure of the second switch and the third inductor. The other end of the parallel structure of the second switch and the third inductor is connected to the drain bias voltage of the second transistor.

2. The millimeter-wave reconfigurable cascode amplifier according to claim 1, characterized in that: The first switch is an NMOS type switching transistor, with its gate as the switch control terminal and its source and drain as the two ends of the switch, respectively. When the first switch is turned on, the NMOS type switching transistor is equivalent to a resistor, and when the first switch is turned off, the NMOS type switching transistor is equivalent to a capacitor. By switching the switch control signal, the capacitance value of the input matching capacitor can be changed to achieve reconfigurable input matching of the amplifier.

3. A millimeter-wave reconfigurable cascode amplifier according to claim 1 or 2, characterized in that: The second switch uses an NMOS transistor, with its gate as the switch control terminal and its source and drain as the two ends of the switch, respectively. When the second switch is on, the NMOS transistor is equivalent to a resistor, and when the second switch is off, the NMOS transistor is equivalent to a capacitor. By switching the switch control signal, the inductance value of the output matching inductor can be changed, thereby realizing reconfigurable matching at the amplifier output.

4. The millimeter-wave reconfigurable cascode amplifier according to claim 1, characterized in that: All common-source and common-gate transistors are NMOS transistors with a gate width of 2μm and a cross-index of 20. The gate bias voltage of the common-source transistor is 0.55V, the gate bias voltage of the common-gate transistor is 1.6V, and the drain bias voltage is 2V.

5. A millimeter-wave reconfigurable cascode amplifier according to claim 1, characterized in that: The first capacitor and the second capacitor are metal-oxide-metal capacitors, and the metal-oxide-metal capacitors adopt an interdigitated structure.

6. A millimeter-wave reconfigurable cascode amplifier according to claim 1, characterized in that: The first capacitor, the second capacitor, and the third capacitor are inductors with inductance values ​​of 250pH, 200pH, and 180pH, respectively.

7. A millimeter-wave reconfigurable cascode amplifier according to claim 1, characterized in that: The first resistor is a resistor with a resistance greater than 5kΩ.

8. A reconfigurable method for a millimeter-wave reconfigurable cascode amplifier according to any one of claims 1-7, characterized in that: Reconfigurable matching networks are designed at both the input and output ends, and the capacitance value of the input matching network and the inductance value of the output matching network are reconfigured respectively to achieve impedance and noise matching in different frequency bands; at the same time, combined with the transformer-coupled gain boost structure, large amplification gain is achieved in different frequency bands.

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