Semiconductor composite device and method for manufacturing semiconductor composite device

Abstract

The semiconductor composite device (1) of the present application is provided with an active element (10) and a passive element (20) configured to correspond to a plurality of channels and constitute a voltage regulator, a load (30) supplied with a direct current voltage regulated by the voltage regulator, and a wiring substrate (40) electrically connected to the active element (10), the passive element (20), and the load (30). A plurality of capacitors (for example, output capacitors (C1) and (C2)) arranged in the channels include a capacitor array (50) including a plurality of capacitor portions arranged in a plane and integrally molded. The capacitor array (50) has a plurality of through-hole conductors (TH1) and (TH2) that pass through the capacitor array (50) in a direction perpendicular to a mounting surface of the wiring substrate (40). At least a portion of the capacitor array (50) is arranged at a position overlapping the load (30) as viewed from the mounting surface of the wiring substrate (40).

Description

Technical Field

[0001] This invention relates to a semiconductor composite device and a method for manufacturing a semiconductor composite device. Background Technology

[0002] Patent Document 1 discloses a semiconductor device with a voltage control mechanism, wherein the voltage control mechanism comprises a package substrate in which some or all of a passive element, such as an inductor or capacitor, is embedded, and active devices, such as switching elements. In the semiconductor device described in Patent Document 1, the voltage control mechanism and a load to which a power supply voltage is to be supplied are mounted on the package substrate. The DC voltage, adjusted by the voltage adjustment unit, is smoothed by the passive elements within the package substrate and supplied to the load.

[0003] Patent Document 1: U.S. Patent Application Publication No. 2011 / 0050334

[0004] The semiconductor device with voltage control described in Patent Document 1 is used, for example, in electronic devices such as mobile phones or smartphones. In recent years, the miniaturization and thinning of electronic devices have been promoted, accompanied by a desire for miniaturization of the semiconductor devices themselves. Furthermore, in the power supply circuitry of high-performance mobile terminals such as smartphones, multi-channel DC-DC converter ICs (Integrated Circuits) or PMICs (Power Management Integrated Circuits) equipped with low-power functions are used. In these ICs, progress has been made in high-speed driving and low-power consumption based on low voltage and high current.

[0005] Figure 1 This is a top view schematically illustrating an example of a semiconductor composite device constituting a multi-channel power supply. Figure 1 The example shown is for a case with two channels.

[0006] Figure 1 The semiconductor composite device 100 shown includes an active element 10 and a passive element 20 constituting a voltage regulator, a load 30 supplying a DC voltage regulated by the voltage regulator, and a wiring substrate 40 electrically connected to the active element 10, the passive element 20 and the load 30.

[0007] Each channel is equipped with an active component 10 and a passive component 20. The first channel CH1 constitutes a single-phase power supply with a single power circuit, while the second channel CH2 constitutes a multi-phase power supply formed by connecting multiple power circuits in parallel.

[0008] The active components 10 constituting the voltage regulator include switching elements SW1, SW2, SW3, and SW4. Among them, switching element SW1 is configured in the first channel CH1, and switching elements SW2, SW3, and SW4 are configured in the second channel CH2.

[0009] The passive components 20 constituting the voltage regulator include output capacitors C1 and C2. Output capacitor C1 is located in the first channel CH1, and output capacitor C2 is located in the second channel CH2. For simplicity, the output capacitors shown here are only examples of capacitors used for voltage smoothing corresponding to the switching frequency of the switching elements. However, for each channel, capacitors used for noise suppression and high-frequency decoupling can also be included, shunt to the output lines, and connected in parallel.

[0010] The passive components 20 constituting the voltage regulator also include inductors L1, L2, L3, and L4. Inductor L1 is configured in the first channel CH1, and inductors L2, L3, and L4 are configured in the second channel CH2.

[0011] Furthermore, the passive component 20 constituting the voltage regulator only needs to include output capacitors C1 and C2, and does not need to include inductors L1, L2, L3 and L4.

[0012] If so Figure 1 As shown in the semiconductor composite device 100, where capacitors such as output capacitors are mounted on a mounting surface of a wiring substrate, a large mounting area is required for the capacitors, making miniaturization of the semiconductor composite device difficult. Since capacitors are mounted per channel, the more channels there are, the larger the mounting area becomes.

[0013] Furthermore, if the connection distance from the output capacitor or other capacitor to the load becomes longer, the losses of equivalent series inductance (ESL) and equivalent series resistance (ESR) increase due to the inductive and resistive components of the wiring. Therefore, it is desirable to place the capacitor near the load. Summary of the Invention

[0014] The object of this invention is to provide a semiconductor composite device that can be miniaturized and has a short connection distance from the capacitor to the load. Furthermore, the object of this invention is to provide a method for manufacturing the aforementioned semiconductor composite device.

[0015] The semiconductor composite device of the present invention includes: active elements and passive elements, configured corresponding to a plurality of channels and constituting a voltage regulator; a load, supplied with a DC voltage adjusted by the voltage regulator, and comprising a semiconductor element; and a wiring substrate electrically connected to the active elements, the passive elements, and the load. The active elements constituting the voltage regulator include switching elements. The passive elements constituting the voltage regulator include capacitors. The plurality of capacitors configured in the channels comprise a capacitor array, which includes a plurality of planarly arranged capacitor portions and is integrally formed. The capacitor array has a plurality of through-hole conductors penetrating the capacitor array in a direction perpendicular to the mounting surface of the wiring substrate. Viewed from the mounting surface of the wiring substrate, at least a portion of the capacitor array is disposed at a position overlapping with the load.

[0016] In the semiconductor composite device of the present invention, the passive element constituting the voltage regulator includes, for example, a capacitor for driving the power supply. Furthermore, there may be a channel for driving the power supply using capacitors different from the integrally formed capacitor array; multiple capacitors within the capacitor array may be connected in parallel to the same channel; additionally, other capacitors connected in parallel to the capacitor array may also be present.

[0017] The method for manufacturing a semiconductor composite device according to the present invention comprises a method for manufacturing a semiconductor composite device in which a capacitor array is embedded in a wiring substrate, including: a step of forming a cavity in a wiring substrate; a step of disposing a capacitor array inside the cavity; a step of electrically connecting the wiring substrate and the capacitor array; and a step of sealing the cavity and embedding the capacitor array in the wiring substrate.

[0018] According to the present invention, a semiconductor composite device that can be miniaturized and has a short connection distance from the capacitor to the load can be provided. Attached Figure Description

[0019] Figure 1 This is a top view schematically illustrating an example of a semiconductor composite device constituting a multi-channel power supply.

[0020] Figure 2 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device according to a first embodiment of the present invention.

[0021] Figure 3 Viewed from one mounting surface of the wiring board Figure 2 A top view of the semiconductor composite device shown.

[0022] Figure 4 It is a schematic representation of the composition. Figure 2 as well as Figure 3A top view of an example of a capacitor array of a semiconductor composite device.

[0023] Figure 5 It means Figure 2 as well as Figure 3 The circuit diagram of the semiconductor composite device is shown.

[0024] Figure 6 This is a cross-sectional view schematically showing an example of a through-hole conductor connected to the anode of a capacitor and its surroundings.

[0025] Figure 7 It is along Figure 6 Projected sectional view of line VII-VII.

[0026] Figure 8 This is a cross-sectional view schematically showing an example of a through-hole conductor connected to the cathode of a capacitor and its surroundings.

[0027] Figure 9 It is along Figure 8 A projected sectional view of the IX-IX rays.

[0028] Figure 10 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device according to a second embodiment of the present invention.

[0029] Figure 11 Viewed from one mounting surface of the wiring board Figure 10 A top view of the semiconductor composite device shown.

[0030] Figure 12 Viewed from another mounting surface of the wiring board Figure 10 A top view of the semiconductor composite device shown.

[0031] Figure 13 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device according to a third embodiment of the present invention.

[0032] Figure 14 Viewed from one mounting surface of the wiring board Figure 13 A top view of the semiconductor composite device shown.

[0033] Figure 15 Viewed from another mounting surface of the wiring board Figure 13 A top view of the semiconductor composite device shown.

[0034] Figure 16 This is a cross-sectional view schematically illustrating another example of a semiconductor composite device according to a second embodiment of the present invention.

[0035] Figure 17This is a cross-sectional view schematically illustrating yet another example of a semiconductor composite device according to a second embodiment of the present invention.

[0036] Figure 18 A and Figure 18 B is a cross-sectional view schematically illustrating an example of the process of forming a cavity on a wiring substrate.

[0037] Figure 19 This is a cross-sectional view schematically illustrating an example of the process of applying tape to a wiring board.

[0038] Figure 20 This is a cross-sectional view schematically illustrating an example of the process of arranging a capacitor array inside a cavity.

[0039] Figure 21 This is a cross-sectional view schematically illustrating an example of a resin sealing process starting from one of the connection terminals of the capacitor array.

[0040] Figure 22 This is a cross-sectional view schematically illustrating an example of the process of peeling tape from a wiring substrate.

[0041] Figure 23 This is a cross-sectional view schematically illustrating an example of a resin sealing process that begins from the other connection terminal side of the capacitor array.

[0042] Figure 24 This is a cross-sectional view schematically illustrating an example of the process of forming a via.

[0043] Figure 25 This is a cross-sectional view schematically illustrating an example of a process involving electroplating.

[0044] Figure 26 A and Figure 26 B is a cross-sectional view schematically illustrating an example of the process of forming a cavity on a wiring substrate.

[0045] Figure 27 This is a cross-sectional view schematically illustrating an example of the process of forming a through hole.

[0046] Figure 28 This is a cross-sectional view schematically illustrating an example of the process of patterning and electroplating.

[0047] Figure 29 This is a cross-sectional view schematically illustrating an example of the process of arranging a capacitor array inside a cavity.

[0048] Figure 30 This is a cross-sectional view schematically illustrating an example of a resin sealing process.

[0049] Figure 31 This is a cross-sectional view schematically illustrating an example of the process of forming a via.

[0050] Figure 32 This is a cross-sectional view schematically illustrating an example of a process involving electroplating.

[0051] Figure 33 This is a cross-sectional view schematically illustrating a first modified example of the semiconductor composite device of the present invention.

[0052] Figure 34 This is a cross-sectional view schematically illustrating a second modified example of the semiconductor composite device of the present invention.

[0053] Figure 35 This is a cross-sectional view schematically illustrating a third modified example of the semiconductor composite device of the present invention.

[0054] Figure 36 This is a cross-sectional view schematically illustrating a fourth modified example of the semiconductor composite device of the present invention.

[0055] Figure 37 This is a cross-sectional view schematically illustrating a fifth modified example of the semiconductor composite device of the present invention.

[0056] Figure 38 It is a circuit diagram of a semiconductor composite device with an input capacitor.

[0057] Figure 39 This is a cross-sectional view schematically illustrating a sixth modified example of the semiconductor composite device of the present invention.

[0058] Figure 40 This is a cross-sectional view schematically illustrating a seventh modified example of the semiconductor composite device of the present invention.

[0059] Figure 41 This is a cross-sectional view schematically illustrating an eighth modified example of the semiconductor composite device of the present invention.

[0060] Figure 42 This is an example of a circuit diagram of a semiconductor composite device that includes a power supply circuit containing a transformer.

[0061] Figure 43 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device equipped with a power supply module.

[0062] Figure 44 This is an example of a circuit diagram of a semiconductor composite device with a power supply module.

[0063] Figure 45 This is another example of a circuit diagram of a semiconductor composite device with a power supply module.

[0064] Figure 46 This is a cross-sectional view schematically illustrating another example of a semiconductor composite device with a power supply module.

[0065] Figure 47 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device in which the substrate of a power module contains an array of capacitors.

[0066] Figure 48 This is a cross-sectional view schematically illustrating another example of a semiconductor composite device in which the substrate of a power module contains an array of capacitors.

[0067] Figure 49 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device containing an array of inductors.

[0068] Figure 50 Viewed from another mounting surface of the wiring board Figure 49 A top view of the semiconductor composite device shown.

[0069] Figure 51 This is an example of a circuit diagram of a semiconductor composite device that includes an array of inductors. Detailed Implementation

[0070] The semiconductor composite device and its manufacturing method according to the present invention will be described below.

[0071] However, the present invention is not limited to the following structures, and can be appropriately modified and applied without changing the spirit of the invention. Furthermore, structures combining two or more of the preferred structures of the present invention described below are also part of the present invention.

[0072] [Semiconductor composite device]

[0073] The semiconductor composite device of the present invention includes active and passive components, a load, and a wiring substrate. The active and passive components are configured to correspond to multiple channels, forming a voltage regulator. The load is supplied with a DC voltage adjusted by the voltage regulator. The wiring substrate is electrically connected to the active components, the passive components, and the load. The active component constituting the voltage regulator includes a switching element. The passive component constituting the voltage regulator includes a capacitor.

[0074] In the semiconductor composite device of the present invention, the passive element constituting the voltage regulator includes, for example, a capacitor for driving power. The capacitor for driving power can be an output-side capacitor or an input-side capacitor. The semiconductor composite device of the present invention may include either an output-side capacitor or an input-side capacitor, or it may include two capacitors as the driving power capacitor.

[0075] The embodiments shown below are illustrative, and of course, partial substitutions or combinations of the structures shown in different embodiments are possible. In the second embodiment and subsequent embodiments, descriptions of matters common to the first embodiment are omitted, and only the differences are explained. In particular, the same effects achieved by the same structure are not mentioned sequentially in each embodiment.

[0076] In the following description, without specifically distinguishing between different embodiments, the device will be referred to simply as "the semiconductor composite device of the present invention".

[0077] The attached figures are schematic and may differ from the actual product in dimensions, aspect ratio, scale, etc.

[0078] (First Implementation)

[0079] Figure 2 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device according to a first embodiment of the present invention. Figure 3 Viewed from one mounting surface of the wiring board Figure 2 A top view of the semiconductor composite device shown. Figure 4 It is a schematic representation of the composition. Figure 2 as well as Figure 3 A top view of an example of a capacitor array of a semiconductor composite device. Figure 5 It means Figure 2 as well as Figure 3 The circuit diagram of the semiconductor composite device is shown. Figure 3 The example shown is for a case with two channels, but the number of channels can also be three or more.

[0080] Figure 2 and Figure 3 The semiconductor composite device 1 shown includes: an active element 10 and a passive element 20 constituting a voltage regulator, a load 30 supplied with a DC voltage adjusted by the voltage regulator, and a wiring substrate 40 electrically connected to the active element 10, the passive element 20 and the load 30.

[0081] Active components 10 and passive components 20 are configured for each channel. The first channel CH1 constitutes a single-phase power supply with one power supply circuit, and the second channel CH2 constitutes a multiphase power supply consisting of multiple power supply circuits connected in parallel. In the second channel CH2, an example of a multiphase power supply consisting of three power supply circuits connected in parallel is shown, but the number of power supply circuits connected in parallel is not particularly limited.

[0082] Alternatively, the first channel CH1 and the second channel CH2 can together constitute a single-phase power supply. Or, the first channel CH1 and the second channel CH2 can together constitute a multi-phase power supply. In this case, the number of power supply circuits connected in parallel can be the same or different.

[0083] The active components 10 constituting the voltage regulator include switching elements SW1, SW2, SW3, and SW4. Among them, switching element SW1 is disposed in the first channel CH1, and switching elements SW2, SW3, and SW4 are disposed in the second channel CH2.

[0084] exist Figure 2 and Figure 3 In the example shown, the switching element SW1 configured in the first channel CH1 and the switching elements SW2, SW3 and SW4 configured in the second channel CH2 are disposed on a mounting surface of the wiring substrate 40.

[0085] The passive components 20 constituting the voltage regulator include output capacitors C1 and C2. Output capacitor C1 is configured in the first channel CH1, and output capacitor C2 is configured in the second channel CH2. The output capacitors shown here are... Figure 1 Similarly, for the sake of simplicity, only the capacitor for voltage smoothing corresponding to the switching frequency of the switching element is shown as an example. However, for each channel, a structure may also be included in which capacitors for noise suppression and high-frequency short-circuiting decoupling are shunted to the output line and connected in parallel. The same applies in the following figures.

[0086] Output capacitors C1 and C2 are examples of capacitors used to stabilize the drive power supply; they are output capacitors used to smooth the output voltage. For example... Figure 2 , Figure 3 as well as Figure 4 As shown, the output capacitor C1 disposed in the first channel CH1 and the output capacitor C2 disposed in the second channel CH2 are composed of a capacitor array 50 that includes multiple capacitor sections arranged in a planar manner and integrally formed. The size of the capacitor section constituting the output capacitor C1 may be the same as or different from the size of the capacitor section constituting the output capacitor C2.

[0087] The capacitor array 50 has a plurality of through-hole conductors TH1 and TH2 that pass through the capacitor array 50 in a direction perpendicular to the mounting surface of the wiring substrate 40. A first connection terminal 61 is formed at one end of the through-hole conductor TH1 or TH2, and a second connection terminal 62 is formed at the other end of the through-hole conductor TH1 or TH2.

[0088] like Figure 2 and Figure 3 As shown, viewed from the mounting surface of the wiring board 40, at least a portion of the capacitor array 50 is positioned overlapping the load 30. Figure 2 and Figure 3 In the example shown, the capacitor array 50 is built into the wiring substrate 40.

[0089] The passive components 20 constituting the voltage regulator also include inductors L1, L2, L3, and L4. Inductor L1 is configured in the first channel CH1, and inductors L2, L3, and L4 are configured in the second channel CH2. Inductor L1 is connected between the switching element SW1 and the load 30, inductor L2 is connected between the switching element SW2 and the load 30, inductor L3 is connected between the switching element SW3 and the load 30, and inductor L4 is connected between the switching element SW4 and the load 30.

[0090] exist Figure 2 and Figure 3 In the example shown, inductor L1 configured in the first channel CH1 and inductors L2, L3 and L4 configured in the second channel CH2 are disposed on a mounting surface of the wiring substrate 40.

[0091] Furthermore, the passive component 20 constituting the voltage regulator only needs to include output capacitors C1 and C2, and does not need to include inductors L1, L2, L3 and L4.

[0092] The load 30 contains semiconductor elements. Examples of load 30 include, for instance, semiconductor integrated circuits (ICs) such as logic operation circuits or memory circuits.

[0093] exist Figure 2 and Figure 3 In the example shown, load 30 is configured on a mounting surface of wiring board 40.

[0094] A circuit layer 45 is formed on one mounting surface of the wiring substrate 40. The circuit layer 45 includes switching elements SW1, SW2, SW3 and SW4, inductors L1, L2, L3 and L4, pads for mounting components such as the load 30, and wiring for connecting these components. The wiring substrate 40 is electrically connected to the active component 10, the passive component 20, and the load 30 via the circuit layer 45.

[0095] Although not shown in the figure, in addition to the active component 10, the passive component 20 and the load 30, electronic devices such as choke inductors, diodes for surge protection and resistors for voltage division can also be configured on the mounting surface of the wiring board 40.

[0096] exist Figure 2 and Figure 3 The example shown illustrates a semiconductor composite device with two channels. However, in the semiconductor composite device of the first embodiment of the present invention, the number of channels is not particularly limited as long as there are two or more channels.

[0097] In the semiconductor composite device of the first embodiment of the present invention, the capacitors such as multiple output capacitors disposed in the channel include a capacitor array, the capacitor array comprising multiple capacitor portions arranged in a planar manner and integrally formed, the capacitor array having multiple through-hole conductors penetrating the capacitor array in a direction perpendicular to the mounting surface of the wiring substrate, and at least a portion of the capacitor array being disposed at a position overlapping with the load when viewed from the mounting surface of the wiring substrate.

[0098] In the first embodiment of the present invention, by having the above-described features, the semiconductor composite device reduces the mounting area because the multiple capacitors are not arranged on the same plane as the load. As a result, miniaturization of the semiconductor composite device is possible.

[0099] Furthermore, since there is no need for circuitous wiring from the capacitor to the load on the same plane, the connection distance from the capacitor to the load can be shortened. As a result, the inductive and resistive components of the wiring can be reduced.

[0100] In the semiconductor composite device of the first embodiment of the present invention, the integrally formed capacitor array may be connected to only one of the multiple channels, but preferably to two or more channels. In the semiconductor composite device of the first embodiment of the present invention, the multiple capacitors disposed in all channels may also be composed solely of an integrally formed capacitor array. Alternatively, there may be a channel that stabilizes the driving power supply through capacitors different from the integrally formed capacitor array, or multiple capacitors within the capacitor array may be connected in parallel to the same channel. Additionally, other capacitors may be connected in parallel with the capacitor array.

[0101] In addition, Figure 2 and Figure 3The example shown illustrates a semiconductor composite device in which the first channel CH1 constitutes a single-phase power supply and the second channel CH2 constitutes a multi-phase power supply. However, in the semiconductor composite device of the first embodiment of the present invention, all channels may constitute a single-phase power supply, all channels may constitute a multi-phase power supply, or a mixture of channels constituting a single-phase power supply and channels constituting a multi-phase power supply may exist. When multiple channels constituting a multi-phase power supply exist, the number of power supply circuits connected in parallel may be the same for each channel or different.

[0102] In the semiconductor composite device of the first embodiment of the present invention, a through-hole conductor is formed on at least the inner wall surface of the through-hole, wherein the through-hole extends from the upper surface to the bottom surface in the thickness direction of the capacitor array. The inner wall surface of the through-hole is metallized with a low-resistivity metal such as Cu, Au, or Ag. For ease of processing, for example, metallization can be performed by electroless Cu plating or electrolytic Cu plating. Furthermore, the metallization of the through-hole conductor is not limited to metallizing only the inner wall surface of the through-hole; it can also be filled with metal or a composite material of metal and resin, etc.

[0103] Here, through-hole conductors are classified as: A. for the anode of the capacitor, B. for the cathode and ground of the capacitor, and for the CI / O line. A. Through-hole conductors for the anode of the capacitor are connected to the anode of the capacitor; B. Through-hole conductors for the cathode and ground of the capacitor are connected to the cathode of the capacitor; and through-hole conductors for the CI / O line are not connected to either the anode or the cathode of the capacitor.

[0104] A. The through-hole conductor for the anode of the capacitor may or may not be filled with insulating material between the through-hole and the through-hole conductor. In the latter case, the core of the anode plate, which serves as the anode of the capacitor (described later), is directly connected to the through-hole conductor. B. The through-hole conductors for the cathode and grounding of the capacitor, as well as the through-hole conductors for the CI / O line, are filled with insulating material between the through-hole and the through-hole conductor.

[0105] In the semiconductor composite device of the first embodiment of the present invention, at least one of the through-hole conductors of the through-hole conductors of the through-capacitor array is connected to the anode of a capacitor such as an output capacitor.

[0106] Figure 6 This is a cross-sectional view schematically showing an example of a through-hole conductor connected to the anode of a capacitor and its surroundings. Figure 7 It is along Figure 6 A projected sectional view of line VII-VII. Figure 6 and Figure 7 In this section, the first through-hole conductor TH11, which is connected to the anode of the output capacitor C1, will be described.

[0107] Figure 6 The output capacitor C1 shown includes a capacitor portion 210, a conductive portion 220 electrically connected to the first through-hole conductor TH11, and an insulating portion 230 laminated on the surface of the capacitor portion 210. The conductive portion 220 is formed on the surface of the first through-hole conductor TH11 and functions as a connection terminal. Figure 6 As shown, the preferred insulating portion 230 preferably includes a first insulating portion 230A stacked on the surface of the capacitor portion 210 and a second insulating portion 230B stacked on the surface of the first insulating portion 230A.

[0108] In this embodiment, the capacitor section 210 includes an anode plate 211 made of metal. For example, the anode plate 211 has a core 212 made of a valve-acting metal. The anode plate 211 preferably has a porous portion 214 provided on at least one main surface of the core 212. A dielectric layer (not shown) is provided on the surface of the porous portion 214, and a cathode layer 216 is provided on the surface of the dielectric layer. Thus, in this embodiment, the capacitor section 210 forms an electrolytic capacitor. Furthermore, in... Figure 6 In the diagram, carbon layer 216A and copper layer 216B are shown as conductive layers, serving as cathode layer 216. Although in... Figure 6 Not shown in the figure, but as the cathode layer 216, a solid electrolyte layer is disposed on the surface of the dielectric layer, and a conductive layer is disposed on the surface of the solid electrolyte layer.

[0109] When an electrolytic capacitor is formed in the capacitor section 210, the anode plate 211 is made of a valve-acting metal that represents a so-called valve function. Examples of valve-acting metals include single metals such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of these metals. Among these metals, aluminum or aluminum alloys are preferred. Hereinafter, electrolytic capacitors based on aluminum or aluminum alloys will also be referred to as aluminum elements.

[0110] The anode plate 211 is preferably flat, and more preferably foil-shaped. The anode plate 211 may have a porous portion 214 on at least one main surface of the core 212, or it may have porous portions 214 on both main surfaces of the core 212. The porous portion 214 is preferably a porous layer formed on the surface of the core 212, and more preferably an etched layer.

[0111] The dielectric layer disposed on the surface of the porous portion 214 reflects the surface state of the porous portion 214 and is porous, having a slightly uneven surface shape. The dielectric layer is preferably composed of an oxide film of the valve-acting metal described above. For example, when aluminum foil is used as the anode plate 211, an oxide film-composed dielectric layer can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called a chemical formation treatment).

[0112] The cathode layer 216 disposed on the surface of the dielectric layer includes, for example, a solid electrolyte layer disposed on the surface of the dielectric layer. The cathode layer 216 further preferably includes a conductive layer disposed on the surface of the solid electrolyte layer.

[0113] Examples of materials constituting the solid electrolyte layer include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these materials, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) known as PEDOT is particularly preferred. Furthermore, the aforementioned conductive polymers may also contain dopants such as polystyrene sulfonic acid (PSS). In addition, the solid electrolyte layer preferably comprises an inner layer that fills the pores (recesses) of the dielectric layer and an outer layer that covers the dielectric layer.

[0114] The conductive layer comprises at least one of a conductive resin layer and a metal layer. The conductive layer may be only a conductive resin layer or only a metal layer. Preferably, the conductive layer covers the entire surface of the solid electrolyte layer.

[0115] As a conductive resin layer, examples include conductive adhesive layers, which contain at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler.

[0116] Examples of metal layers include metal coatings and metal foils. The metal layer is preferably composed of at least one metal selected from the group consisting of nickel, copper, silver, and alloys of these metals as main components. Furthermore, the term "main component" refers to the element with the highest weight percentage.

[0117] The conductive layer may include, for example, a carbon layer disposed on the surface of the solid electrolyte layer and a copper layer disposed on the surface of the carbon layer.

[0118] The carbon layer is provided to enable electrical and mechanical connections between the solid electrolyte layer and the copper layer. The carbon layer can be formed in a specified area by applying carbon paste to the solid electrolyte layer using methods such as sponge transfer, screen printing, dispensing, or inkjet printing.

[0119] Copper layers can be formed by printing copper paste onto carbon layers using methods such as sponge transfer, screen printing, spraying, drop coating, and inkjet printing.

[0120] The conductive part 220 is primarily composed of a low-resistance metal such as Ag, Au, or Cu. To improve interlayer adhesion, a conductive adhesive material formed by mixing the aforementioned conductive filler and resin can also be used as the conductive part.

[0121] The insulating part 230 is made of an insulating material such as epoxy resin, phenol resin or polyimide resin, or a mixture of epoxy resin, phenol resin or polyimide resin and inorganic filler such as silica or alumina.

[0122] Furthermore, the capacitor section 210 can also be a ceramic capacitor using barium titanate, or a thin-film capacitor using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), etc. However, from the viewpoint of being able to form a thinner capacitor section 210 with a relatively large area, and considering the mechanical properties such as the rigidity and flexibility of the capacitor array 50, the capacitor section 210 is preferably a capacitor with a metal substrate such as aluminum, more preferably an electrolytic capacitor with a metal substrate such as aluminum, and even more preferably an electrolytic capacitor with an aluminum or aluminum alloy substrate.

[0123] The first through-hole conductor TH11 is formed to penetrate the capacitor portion 210 in the thickness direction of the output capacitor C1. Specifically, the first through-hole conductor TH11 is formed on at least the inner wall surface of the first through-hole h11 that penetrates the capacitor portion 210 in the thickness direction.

[0124] like Figure 6 and Figure 7 As shown, the first through-hole conductor TH11 is connected to the end face of the anode plate 211. That is, the first through-hole conductor TH11 is connected to the core 212, which serves as the anode of the capacitor section 210, on the end face of the anode plate 211.

[0125] By electrically connecting the first through-hole conductor TH11 to the anode of the capacitor section 210, the output capacitor C1 can be miniaturized, and the semiconductor composite device can be further miniaturized. In this case, if the first through-hole conductor TH11 is connected to the end face of the anode plate 211, the first through-hole conductor TH11 can simultaneously perform the wiring function connecting the top and bottom of the output capacitor C1 and the wiring function connecting the anode of the capacitor section 210, thus enabling miniaturization of the semiconductor composite device. Furthermore, by shortening the wiring length, the ESL and ESR of the output capacitor C1 can be reduced.

[0126] At the end face of the anode plate 211 connected to the first through-hole conductor TH11, the core 212 and the porous portion 214 are exposed. Insulating material is filled into the porous portion 214, such as... Figure 6 and Figure 7 As shown, a third insulating portion 230C is provided around the first through-hole conductor TH11.

[0127] like Figure 6As shown, preferably, the core portion 212 and the porous portion 214 are exposed at the end face of the anode plate 211 connected to the first through-hole conductor TH11. In this case, since the contact area between the first through-hole conductor TH11 and the porous portion 214 is increased, the adhesion is improved, and it is difficult for defects such as peeling of the first through-hole conductor TH11 to occur.

[0128] When the core 212 and the porous portion 214 are exposed at the end face of the anode plate 211 connected to the first through-hole conductor TH11, it is preferable to have insulating material in the void portion of the porous portion 214. That is, it is preferable to provide a third insulating portion 230C around the first through-hole conductor TH11. By filling the porous portion 214 around a certain area of ​​the first through-hole conductor TH11 with insulating material, the insulation between the core 212 of the anode plate 211 and the cathode layer 216 can be ensured, and short circuits can be prevented. Furthermore, since the dissolution of the end face of the anode plate 211 generated during the chemical treatment for forming the conductive portion 220, etc., can be suppressed, the intrusion of the chemical solution into the capacitor portion 210 can be prevented, and the reliability of the output capacitor C1 is improved.

[0129] From the perspective of improving the above effects, the preferred option is as follows: Figure 6 As shown, the thickness of the third insulating part 230C is greater than the thickness of the porous part 214.

[0130] Furthermore, when the core 212 and the porous portion 214 are exposed at the end face of the anode plate 211 connected to the first through-hole conductor TH11, insulating material may not be present in the void portion of the porous portion 214. In this case, the void portion of the porous portion 214 is exposed at the end face of the anode plate 211.

[0131] like Figure 6 and Figure 7 As shown, preferably, an anode connection layer 240 is provided between the first through-hole conductor TH11 and the anode plate 211, and the first through-hole conductor TH11 is connected to the end face of the anode plate 211 via the anode connection layer 240. By providing the anode connection layer 240 between the first through-hole conductor TH11 and the anode plate 211, the anode connection layer 240 functions as a barrier layer against the core 212 and the porous portion 214 of the anode plate 211. As a result, since the dissolution of the anode plate 211 during the chemical treatment used to form the conductive portion 220, etc., can be suppressed, the intrusion of the chemical solution into the capacitor portion 210 can be prevented, and the reliability of the output capacitor C1 is improved.

[0132] When an anode connection layer 240 is provided between the first through-hole conductor TH11 and the anode plate 211, for example, Figure 6 and Figure 7As shown, the anode bonding layer 240, starting from the anode plate 211, sequentially includes a first anode bonding layer 240A with Zn as the main material and a second anode bonding layer 240B with Ni or Cu as the main material. For example, after Zn is deposited on the end face of the anode plate 211 by zincate treatment to form the first anode bonding layer 240A, the second anode bonding layer 240B is formed on the first anode bonding layer 240A by electroless Ni plating or electroless Cu plating. Alternatively, there are cases where the first anode bonding layer 240A disappears; in such cases, the anode bonding layer 240 may consist only of the second anode bonding layer 240B.

[0133] Preferably, the anode bonding layer 240 comprises a layer with Ni as the main material. By using Ni in the anode bonding layer 240, damage to Al and other materials constituting the anode plate 211 can be reduced, and the barrier properties can be improved.

[0134] When an anode connection layer 240 is provided between the first through-hole conductor TH11 and the anode plate 211, it is preferable to... Figure 6 When viewed in cross-section orthogonal to the thickness direction, the length of the anode bonding layer 240 in the direction in which the first through-hole conductor TH11 extends is longer than the length of the anode plate 211 in the same direction. In this case, since the core 212 and porous portion 214 exposed at the end face of the anode plate 211 are completely covered by the anode bonding layer 240, the dissolution of the anode plate 211 can be further suppressed.

[0135] From Figure 7 Viewed from above along the thickness direction, it is preferable that the first through-hole conductor TH11 covers the entire circumference of the first through-hole h11 and is connected to the end face of the anode plate 211. In this case, since the contact area between the first through-hole conductor TH11 and the anode plate 211 is increased, the connection resistance with the first through-hole conductor TH11 is reduced, thereby lowering the ESR of the output capacitor C1. Furthermore, the adhesion between the first through-hole conductor TH11 and the anode plate 211 is increased, making it less prone to defects such as peeling on the connection surface caused by thermal stress.

[0136] Preferably, the first through-hole h11 is filled with a material comprising resin. That is, as shown in the example... Figure 6 and Figure 7 As shown, a first resin filling portion 242A is preferably provided in the first through hole h11. By filling the first through hole h11 with resin material to eliminate voids, the delamination of the first through hole conductor TH11 formed on the inner wall surface of the first through hole h11 can be suppressed.

[0137] The material filled into the first through-hole h11 preferably has a thermal expansion rate greater than that of the material constituting the first through-hole conductor TH11 (e.g., copper). In this case, by the expansion of the material filled into the first through-hole h11 under high temperature conditions, the first through-hole conductor TH11 is pressed from the inside to the outside of the first through-hole h11, which can further suppress the delamination of the first through-hole conductor TH11.

[0138] The thermal expansion coefficient of the material filled into the first through hole h11 can be the same as or less than that of the material constituting the first through hole conductor TH11.

[0139] In the semiconductor composite device of the first embodiment of the present invention, an inductor disposed in at least one channel may also be electrically connected to a through-hole conductor, wherein the through-hole conductor is connected to the anode of a capacitor such as an output capacitor. In this case, it is preferable that inductors disposed in all channels are electrically connected to the through-hole conductor, wherein the through-hole conductor is connected to the anode of a capacitor.

[0140] In the semiconductor composite device of the first embodiment of the present invention, at least one of the through-hole conductors of the through-hole array of capacitors is connected to the cathode of a capacitor such as an output capacitor.

[0141] Figure 8 This is a cross-sectional view schematically showing an example of a through-hole conductor connected to the cathode of a capacitor and its surroundings. Figure 9 It is along Figure 8 A projected sectional view of the IX-IX rays. Figure 8 and Figure 9 The second through-hole conductor TH12, which is connected to the cathode of the output capacitor C1, will be described in detail.

[0142] Figure 8 The output capacitor C1 shown includes a capacitor portion 210, a conductive portion 222 electrically connected to the second through-hole conductor TH12, and an insulating portion 230 laminated on the surface of the capacitor portion 210. The conductive portion 222 is formed on the surface of the second through-hole conductor TH12 and can function as a connection terminal. Figure 8 As shown, the insulating portion 230 preferably includes a first insulating portion 230A stacked on the surface of the capacitor portion 210 and a second insulating portion 230B stacked on the surface of the first insulating portion 230A.

[0143] As in Figure 6As described above, the capacitor section 210 includes an anode plate 211 made of metal. For example, the anode plate 211 has a core 212 made of valve-acting metal. The anode plate 211 preferably has a porous portion 214 provided on at least one main surface of the core 212. A dielectric layer (not shown) is provided on the surface of the porous portion 214, and a cathode layer 216 is provided on the surface of the dielectric layer. Thus, in this embodiment, the capacitor section 210 forms an electrolytic capacitor.

[0144] The second through-hole conductor TH12 is formed to penetrate the capacitor portion 210 in the thickness direction of the output capacitor C1. Specifically, the second through-hole conductor TH12 is formed on at least the inner wall surface of the second through-hole h12 that penetrates the capacitor portion 210 in the thickness direction.

[0145] like Figure 8 As shown, the second through-hole conductor TH12 is electrically connected to the cathode layer 216 via the conductive part 222 and the conductive conductor 224.

[0146] When the insulating portion 230 includes a first insulating portion 230A and a second insulating portion 230B, such as Figure 8 and Figure 9 As shown, the second insulating portion 230B preferably extends between the second through-hole conductor TH12 and the anode plate 211. By having the second insulating portion 230B between the second through-hole conductor TH12 and the anode plate 211, the insulation between the second through-hole conductor TH12 and the core 212 of the anode plate 211 can be ensured.

[0147] The core 212 and the porous portion 214 are exposed at the end face of the anode plate 211 that contacts the second insulating portion 230B. Insulating material is filled into the porous portion 214, such as... Figure 8 and Figure 9 As shown, a fourth insulating portion 230D is provided around the second through-hole conductor TH12.

[0148] When the second insulating portion 230B extends between the second through-hole conductor TH12 and the anode plate 211, as Figure 8 As shown, preferably, the core portion 212 and the porous portion 214 are exposed at the end face of the anode plate 211 that contacts the second insulating portion 230B. In this case, since the contact area between the second insulating portion 230B and the porous portion 214 is increased, the adhesion is improved, and it is less likely to cause defects such as peeling.

[0149] When the core 212 and the porous portion 214 are exposed at the end face of the anode plate 211 in contact with the second insulating portion 230B, it is preferable that insulating material is present in the void portion of the porous portion 214. That is, as Figure 8 and Figure 9As shown, a fourth insulating portion 230D is preferably provided around the second through-hole conductor TH12. By filling the porous portion 214 around a certain area of ​​the second through-hole conductor TH12 with insulating material, the insulation between the second through-hole conductor TH12 and the core portion 212 of the anode plate 211 can be ensured, and short circuits can be prevented.

[0150] From the perspective of improving the above effects, the preferred option is as follows: Figure 8 As shown, the thickness of the fourth insulating portion 230D is greater than the thickness of the porous portion 214.

[0151] Furthermore, when the core 212 and the porous portion 214 are exposed at the end face of the anode plate 211 that contacts the second insulating portion 230B, insulating material may not be present in the void portion of the porous portion 214. In this case, the void portion of the porous portion 214 is exposed at the end face of the anode plate 211.

[0152] When the second insulating portion 230B extends between the second through-hole conductor TH12 and the anode plate 211, it is preferable that the insulating material constituting the second insulating portion 230B enters the void portion of the porous portion 214. This improves the mechanical strength of the porous portion 214. Furthermore, it suppresses delamination caused by the voids in the porous portion 214.

[0153] The insulating material constituting the second insulating portion 230B preferably has a higher coefficient of thermal expansion than the material constituting the second through-hole conductor TH12 (e.g., copper). In this case, by the expansion of the insulating material constituting the second insulating portion 230B at high temperatures, pressing the porous portion 214 and the second through-hole conductor TH12, delamination can be further suppressed.

[0154] The thermal expansion rate of the insulating material constituting the second insulating part 230B can be the same as or less than the thermal expansion rate of the material constituting the second through-hole conductor TH12.

[0155] Preferably, the second through-hole h12 is filled with a material containing resin. That is, such as... Figure 8 and Figure 9 As shown, a second resin filling portion 242B is preferably provided inside the second through hole h12. By filling the second through hole h12 with resin material to eliminate voids, the delamination of the second through hole conductor TH12 formed on the inner wall surface of the second through hole h12 can be suppressed.

[0156] The material filling the second via h12 preferably has a thermal expansion rate greater than that of the material constituting the second via conductor TH12 (e.g., copper). In this case, by the expansion of the material filling the second via h12 under high temperature conditions, the second via conductor TH12 is pressed from the inside to the outside of the second via h12, which can further suppress the delamination of the second via conductor TH12.

[0157] The thermal expansion coefficient of the material filled into the second through hole h12 can be the same as or less than that of the material constituting the second through hole conductor TH12.

[0158] The semiconductor composite device according to the first embodiment of the present invention may also include a third via conductor, which is not connected to either the anode or cathode of a capacitor such as an output capacitor. By connecting lines such as grounding wires to the top and bottom of the wiring substrate via via conductors other than the first via conductor connected to the anode of the capacitor and the second via conductor connected to the cathode of the capacitor, the design freedom of the semiconductor composite device can be increased, and further miniaturization of the semiconductor composite device can be achieved.

[0159] As described above, through-hole conductors are classified as: A. for the anode of a capacitor, B. for the cathode and ground of a capacitor, and C1 / O line. A through-hole conductor used as the anode of a capacitor (A) is equivalent to a first through-hole conductor; a through-hole conductor used as the cathode and ground of a capacitor (B) is equivalent to a second through-hole conductor; and a through-hole conductor used as a C1 / O line is equivalent to a third through-hole conductor.

[0160] A. The through-hole conductor in the anode of a capacitor, which is directly connected to the end face of the anode plate, can be formed, for example, by the following method.

[0161] 1. In the part that forms a through-hole conductor, a through-hole 1 is formed by drilling or laser processing.

[0162] 2. The inner wall surface of the through hole 1 is metal-sprayed by electroplating or other methods to form a through hole conductor.

[0163] B. The cathode and grounding conductor of the capacitor, as well as the through-hole conductor for the CI / O line, can be formed, for example, by the following methods.

[0164] 1. In the part that forms a through-hole conductor, a through-hole 1 is formed by drilling or laser processing.

[0165] 2. Fill the through hole 1 with resin.

[0166] 3. Through drilling or laser processing, a through hole 2 is formed by filling the through hole 1 with resin. At this time, by reducing the diameter of the through hole 2 relative to the diameter of the resin, a state is achieved where resin exists between the through hole 1 and the through hole 2.

[0167] 4. The inner wall surface of the through hole 2 is metal-sprayed by electroplating or other methods to form a through hole conductor.

[0168] (Second Implementation)

[0169] In the second embodiment of the present invention, the inductor is electrically connected to the through-hole conductor of the capacitor array, and the inductor is positioned at a point overlapping with the capacitor array, which differs from the first embodiment of the present invention. In the second embodiment of the present invention, the configuration of the switching element may be the same as or different from that in the first embodiment.

[0170] Figure 10 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device according to a second embodiment of the present invention. Figure 11 Viewed from one mounting surface of the wiring board Figure 10 A top view of the semiconductor composite device shown. Figure 12 Viewed from another mounting surface of the wiring board Figure 10 A top view of the semiconductor composite device shown. Figure 10 The example shown is for a case with two channels, but the number of channels can also be three or more.

[0171] Figure 10 , Figure 11 as well as Figure 12 The semiconductor composite device 2 shown is Figure 2 as well as Figure 3 The semiconductor composite device 1 shown is the same as that shown, and includes: an active element 10 and a passive element 20 constituting a voltage regulator, a load 30 supplied with a DC voltage adjusted by the voltage regulator, and a wiring board 40 electrically connected to the active element 10, the passive element 20 and the load 30.

[0172] exist Figure 10 , Figure 11 as well as Figure 12 In the semiconductor composite device 2 shown, the inductor L1 disposed in the first channel CH1 and the inductors L2, L3 and L4 disposed in the second channel CH2 are electrically connected to the through-hole conductor TH1 of the through capacitor array 50.

[0173] Inductors L1, L2, L3, and L4, electrically connected to the through-hole conductor TH1, are positioned on the side opposite to the load 30 when viewed from the capacitor array 50, and when viewed from the mounting surface of the wiring board 40, are positioned where at least a portion overlaps with the capacitor array 50. Figure 10 , Figure 11 as well as Figure 12 In the example shown, inductors L1, L2, L3 and L4 are configured on another mounting surface of the wiring board 40.

[0174] In the semiconductor composite device of the second embodiment of the present invention, an inductor disposed in at least one channel is electrically connected to a through-hole conductor passing through a capacitor array. Viewed from the mounting surface of the wiring substrate, the inductor electrically connected to the through-hole conductor is disposed at a position where at least a portion overlaps with the capacitor array. The inductor is preferably disposed on the side opposite to the load when viewed from the capacitor array, but it may also be disposed between the capacitor array and the load.

[0175] In the second embodiment of the present invention, the semiconductor composite device has the above-described features, and since the inductor and capacitor are not disposed on the same plane, the connection distance from the inductor to the capacitor can be shortened. As a result, losses caused by wiring can be reduced.

[0176] In the semiconductor composite device of the second embodiment of the present invention, it is preferable that the inductors disposed in all channels are electrically connected to the through-hole conductors of the through-capacitor array.

[0177] In the semiconductor composite device of the second embodiment of the present invention, the through-hole conductor connected to the inductor is preferably connected to the anode of a capacitor such as an output capacitor. In this case, the through-hole conductor connected to the anode of the capacitor is connected to the end face of the anode plate described in the first embodiment of the present invention.

[0178] (Third Implementation)

[0179] In the third embodiment of the present invention, the point at which the through-hole conductor connected to the inductor configured to constitute each power circuit of the multiphase power supply is connected to the anode of a capacitor such as an output capacitor, and the multiple through-hole conductors connected to each inductor are electrically connected via the anode of the capacitor, is different from the second embodiment of the present invention.

[0180] Figure 13 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device according to a third embodiment of the present invention. Figure 14 Viewed from one mounting surface of the wiring board Figure 13 A top view of the semiconductor composite device shown. Figure 15 Viewed from another mounting surface of the wiring board Figure 13 A top view of the semiconductor composite device shown. Figure 13 The example shown is for a case with two channels, but the number of channels can also be three or more.

[0181] Figure 13 , Figure 14 as well as Figure 15 The semiconductor composite device 3 shown is Figure 2 as well as Figure 3 Similarly, the semiconductor composite device 1 shown includes: an active element 10 and a passive element 20 constituting a voltage regulator, a load 30 supplied with a DC voltage adjusted by the voltage regulator, and a wiring board 40 electrically connected to the active element 10, the passive element 20 and the load 30.

[0182] exist Figure 13 , Figure 14 as well as Figure 15 In the semiconductor composite device 3 shown, the inductor L1 disposed in the first channel CH1 and the inductors L2, L3 and L4 disposed in the second channel CH2 are electrically connected to the through-hole conductor TH1 of the through capacitor array 50.

[0183] Viewed from the capacitor array 50, inductors L1, L2, L3, and L4, electrically connected to the through-hole conductor TH1, are positioned on the side opposite to the load 30. Viewed from the mounting surface of the wiring board 40, at least a portion of it is positioned overlapping the capacitor array 50. Figure 13 , Figure 14 as well as Figure 15 In the example shown, inductors L1, L2, L3 and L4 are disposed on another mounting surface of the wiring substrate 40.

[0184] In the second channel CH2, which constitutes the multiphase power supply, through-hole conductors TH1 connected to inductors L2, L3, and L4, respectively, are connected to the anode of output capacitor C2. Furthermore, the multiple through-hole conductors TH1 connected to each inductor L2, L3, and L4 are electrically connected via the anode of output capacitor C2.

[0185] In the semiconductor composite device of the third embodiment of the present invention, the feature is that, in the channel constituting the multiphase power supply, the through-hole conductor connected to the inductor arranged according to each power supply circuit is connected to the anode of the capacitor such as the output capacitor, and the plurality of through-hole conductors connected to each inductor are electrically connected via the anode of the capacitor.

[0186] In a multiphase power supply path, phase design becomes difficult because the inductance of the wiring changes if the connection distance from each switching element to the load is different. In contrast, in the third embodiment of the invention, by connecting multiple inductors via the anode of a capacitor, rather than through wiring detours, the wiring detours can be minimized. As a result, wiring losses can be further reduced, and phase shifts can be prevented.

[0187] In the semiconductor composite device of the third embodiment of the present invention, it is preferable that the through-hole conductor connected to the anode of a capacitor such as an output capacitor is connected to the end face of the anode plate described in the first embodiment of the present invention.

[0188] In the second and third embodiments of the present invention, the inductor electrically connected to the through-hole conductor is preferably positioned on the side opposite to the load when viewed from the capacitor array, but it may also be positioned between the capacitor array and the load.

[0189] Figure 16 This is a cross-sectional view schematically illustrating another example of a semiconductor composite device according to a second embodiment of the present invention.

[0190] exist Figure 16 In the semiconductor composite device 2A shown, inductor L1 is disposed on one mounting surface of wiring substrate 40 between capacitor array 50 and load 30. On the other hand, inductors L2, L3 and L4 are disposed on another mounting surface of wiring substrate 40 on the side opposite to load 30 when viewed from capacitor array 50.

[0191] Alternatively, inductor L1 can be positioned on another mounting surface of the wiring substrate 40 on the side opposite to the load 30 when viewed from the capacitor array 50, and inductors L2, L3, and L4 can be positioned on one mounting surface of the wiring substrate 40 between the capacitor array 50 and the load 30. Alternatively, inductors L1, L2, L3, and L4 can also be positioned on one mounting surface of the wiring substrate 40 between the capacitor array 50 and the load 30.

[0192] In the second and third embodiments of the present invention, when the inductor electrically connected to the through-hole conductor is configured on the side opposite to the load when viewed from the capacitor array, the inductor can be configured on the mounting surface of the wiring substrate or built into the wiring substrate.

[0193] Figure 17 This is a cross-sectional view schematically illustrating yet another example of a semiconductor composite device according to a second embodiment of the present invention.

[0194] exist Figure 17 In the semiconductor composite device 2B shown, inductors L1, L2, L3, and L4 are arranged on the side opposite to the load 30 when viewed from the capacitor array 50. Inductors L1 and L3 are built into the wiring substrate 40. On the other hand, inductors L2 and L4 are arranged on another mounting surface of the wiring substrate 40.

[0195] In the second and third embodiments of the present invention, it is preferable that the switching element is disposed in a position where at least a portion overlaps with the capacitor array, as viewed from the mounting surface of the wiring board, within the channel through which the inductor and the via conductor are electrically connected. In this case, the connection distance from the switching element to the load can be further shortened. The switching element is preferably disposed on the side opposite to the load when viewed from the capacitor array, but it can also be disposed between the capacitor array and the load.

[0196] [Manufacturing Method of Semiconductor Composite Device]

[0197] The following describes a method for manufacturing a semiconductor composite device in which a capacitor array is embedded in a wiring substrate, as an example of such a method. This method for manufacturing a semiconductor composite device is also part of the present invention.

[0198] The method for manufacturing a semiconductor composite device according to the present invention includes: a step of forming a cavity in a wiring substrate; a step of disposing a capacitor array inside the cavity; a step of electrically connecting the wiring substrate and the capacitor array; and a step of sealing the cavity and embedding the capacitor array inside the wiring substrate.

[0199] In the manufacturing method of the semiconductor composite device of the present invention, the order of the above-mentioned steps is not particularly limited.

[0200] In the manufacturing method of the semiconductor composite device of the present invention, the method of electrically connecting the capacitor array disposed inside the cavity to the wiring substrate is not particularly limited. For example, via connection, bump connection, electroplating connection, connection via conductive paste such as anisotropic conductive film, etc. can be cited.

[0201] In the method for manufacturing the semiconductor composite device of the present invention, the depth of the cavity formed on the wiring substrate can be either a cavity that penetrates the wiring substrate or a cavity that does not penetrate the wiring substrate.

[0202] As a first method for manufacturing the semiconductor composite device of the present invention, an example of forming a cavity in a through wiring substrate will be described.

[0203] Figure 18 A and Figure 18 B is a cross-sectional view schematically illustrating an example of the process of forming a cavity on a wiring substrate.

[0204] like Figure 18 As shown in Figure A, a wiring substrate 400 is prepared with wiring layers 420 on both sides of the core layer 410. Then, as... Figure 18 As shown in B, a cavity 430 is formed through the wiring substrate 400.

[0205] Figure 19 This is a cross-sectional view schematically illustrating an example of the process of applying tape to a wiring board.

[0206] like Figure 19 As shown, tape 440 is pasted on one side of the wiring substrate 400.

[0207] Figure 20 This is a cross-sectional view schematically illustrating an example of the process of arranging a capacitor array inside a cavity.

[0208] like Figure 20 As shown, the capacitor array 500 is disposed inside the cavity 430 by fixing the capacitor array 500 to the tape 440.

[0209] The capacitor array 500 has a plurality of through-hole conductors TH1 and TH2 extending through the capacitor array 500 in a direction perpendicular to the mounting surface of the wiring substrate 400. A first connection terminal 610 is formed at one end of the through-hole conductor TH1 or TH2, and a second connection terminal 620 is formed at the other end of the through-hole conductor TH1 or TH2. Figure 20 In the example shown, the second connection terminal 620 side of the capacitor array 500 is fixed to the tape 440.

[0210] Figure 21 This is a cross-sectional view schematically illustrating an example of a resin sealing process starting from one of the connection terminals of the capacitor array.

[0211] like Figure 21 As shown, using an insulating laminate material, resin sealing is performed starting from one connection terminal side of the capacitor array 500 to form an insulating layer 450. Figure 21 In the example shown, resin sealing begins on the side of the first connecting terminal 610 from which no tape 440 has been applied.

[0212] Figure 22 This is a cross-sectional view schematically illustrating an example of the process of peeling tape from a wiring substrate.

[0213] like Figure 22 As shown, the tape 440 is peeled off from the wiring substrate 400.

[0214] Figure 23 This is a cross-sectional view schematically illustrating an example of a resin sealing process that begins from the other connection terminal side of the capacitor array.

[0215] like Figure 23 As shown, using an insulating laminate material, resin sealing is performed starting from the other connection terminal side of the capacitor array 500 to form an insulating layer 450. Figure 23In the example shown, resin sealing is performed starting from the second connection terminal 620 side after the peel tape 440. Thus, the capacitor array 500 is integrated into the wiring substrate 400.

[0216] Figure 24 This is a cross-sectional view schematically illustrating an example of the process of forming a via.

[0217] like Figure 24 As shown, a through hole 460 is formed in the insulating layer 450 to expose the first connection terminal 610 and the second connection terminal 620.

[0218] Figure 25 This is a cross-sectional view schematically illustrating an example of a process involving electroplating.

[0219] like Figure 25 As shown, an electroplating process is performed to form a first conductor portion 470 and a second conductor portion 480 inside the via 460. The first conductor portion 470 and the second conductor portion 480 are also formed on the surface of the insulating layer 450. The first conductor portion 470 is connected to the first connection terminal 610, and the second conductor portion 480 is connected to the second connection terminal 620. Thus, the wiring substrate 400 is electrically connected to the capacitor array 500.

[0220] Next, active components including switching elements and loads including semiconductor elements are configured. At this point, viewed from the mounting surface of the wiring board, at least a portion of the capacitor array is arranged to overlap with the load. Thus, a semiconductor composite device is obtained.

[0221] As a second method for manufacturing the semiconductor composite device of the present invention, an example of forming a cavity that does not penetrate a wiring substrate will be described.

[0222] Figure 26 A and Figure 26 B is a cross-sectional view schematically illustrating an example of the process of forming a cavity on a wiring substrate.

[0223] like Figure 26 As shown in Figure A, a wiring substrate 400 is prepared with wiring layers 420 on both sides of the core layer 410. Then, as... Figure 26 As shown in B, a cavity 430A is formed that does not penetrate the wiring substrate 400.

[0224] Figure 27 This is a cross-sectional view schematically illustrating an example of the process of forming a through hole.

[0225] like Figure 27 As shown, vias 490 are formed in the core layer 410 (where the cavity 430A is not formed) and the wiring layer 420. Figure 27In the example shown, a through-hole 490 is formed in the formation of the second conductor portion 480 (see reference). Figure 28 The second conductor portion 480 is connected to the second connection terminal 620 of the capacitor array 500 (see reference). Figure 29 )connect.

[0226] Figure 28 This is a cross-sectional view schematically illustrating an example of the process of patterning and electroplating.

[0227] like Figure 28 As shown, patterning and electroplating are performed to form a second conductor portion 480 inside the through hole 490.

[0228] Figure 29 This is a cross-sectional view schematically illustrating an example of the process of arranging a capacitor array inside a cavity.

[0229] like Figure 29 As shown, the capacitor array 500 is disposed inside the cavity 430.

[0230] The capacitor array 500 has a plurality of through-hole conductors TH1 and TH2 extending through the capacitor array 500 in a direction perpendicular to the mounting surface of the wiring substrate 400. A first connection terminal 610 is formed at one end of the through-hole conductor TH1 or TH2, and a second connection terminal 620 is formed at the other end of the through-hole conductor TH1 or TH2. Figure 29 In the example shown, the second connection terminal 620 of the capacitor array 500 is connected to the second conductor portion 480 via a reflow connection or the like.

[0231] Figure 30 This is a cross-sectional view schematically illustrating an example of a resin sealing process.

[0232] like Figure 30 As shown, using an insulating laminate material, resin sealing is performed starting from one connection terminal side of the capacitor array 500 to form an insulating layer 450. Figure 30 In the example shown, resin sealing begins from the side of the first connection terminal 610.

[0233] Figure 31 This is a cross-sectional view schematically illustrating an example of the process of forming a via.

[0234] like Figure 31 As shown, a through hole 460 is formed in the insulating layer 450 to expose the first connection terminal 610.

[0235] Figure 32 This is a cross-sectional view schematically illustrating an example of a process involving electroplating.

[0236] like Figure 32 As shown, an electroplating process is performed to form a first conductor portion 470 inside the via 460. The first conductor portion 470 is also formed on the surface of the insulating layer 450. The first conductor portion 470 is connected to the first connection terminal 610. Thus, the wiring substrate 400 and the capacitor array 500 are electrically connected.

[0237] Next, active components including switching elements and loads including semiconductor elements are configured. At this point, viewed from the mounting surface of the wiring board, at least a portion of the capacitor array is arranged to overlap with the load. Thus, a semiconductor composite device is obtained.

[0238] [Other Implementation Methods]

[0239] The semiconductor composite device of the present invention is not limited to the above-described embodiments. Various applications and modifications can be applied to the structure, manufacturing conditions, etc. of the semiconductor composite device within the scope of the present invention.

[0240] In the semiconductor composite device of the present invention, the passive components constituting the voltage regulator may include at least a capacitor, or may not necessarily include an inductor.

[0241] In the semiconductor composite device of the present invention, the capacitor array preferably comprises a plurality of capacitor sections divided from a capacitor sheet made of a single aluminum element. In this case, since the degree of freedom in the arrangement of the capacitor sections is increased, greater advantages can be obtained in terms of miniaturization of the semiconductor composite device.

[0242] In the semiconductor composite device of the present invention, it is preferable that the capacitor array is built into the wiring substrate. By building the capacitor array into the wiring substrate, the mounting area can be reduced.

[0243] In the semiconductor composite device of the present invention, the capacitor array can also be used as an interposer for a load, an inductor, or a switching element. In this case, when viewed from the mounting surface of the wiring substrate, at least a portion of the capacitor array can be configured to overlap with the load.

[0244] Figure 33 This is a cross-sectional view schematically illustrating a first modified example of the semiconductor composite device of the present invention.

[0245] Figure 33 The semiconductor composite device 4A shown includes: an active element 10 and a passive element 20 constituting a voltage regulator, a load 30 supplied with a DC voltage adjusted by the voltage regulator, and a wiring board 40 electrically connected to the active element 10, the passive element 20 and the load 30.

[0246] The active component 10 constituting the voltage regulator includes a switching element SW. The switching element SW is disposed on a mounting surface of the wiring substrate 40.

[0247] The passive components 20 constituting the voltage regulator include a capacitor array 50 and an inductor L. The capacitor array 50 and the inductor L are disposed on a mounting surface of the wiring substrate 40.

[0248] The load 30 is connected to the capacitor array 50 on the wiring substrate 40. Viewed from the mounting surface of the wiring substrate 40, at least a portion of the capacitor array 50 is disposed at a position overlapping with the load 30.

[0249] Figure 33 The semiconductor composite device 4A shown has, in addition to the capacitor array 50 being used as an interposer for the load 30, a similar... Figure 2 The semiconductor composite device 1 shown has the same structure.

[0250] Figure 34 This is a cross-sectional view schematically illustrating a second modified example of the semiconductor composite device of the present invention.

[0251] Figure 34 The semiconductor composite device 4B shown has, in addition to the capacitor array 50 being used as an interpolator for the load 30, a similar... Figure 13 The semiconductor composite device 3 shown has the same structure.

[0252] Similarly, in Figure 10 The semiconductor composite device 2 shown Figure 16 The semiconductor composite device 2A shown Figure 17 In the semiconductor composite device 2B shown, the capacitor array 50 can also be used as an interpolator for the load 30.

[0253] Figure 35 This is a cross-sectional view schematically illustrating a third modified example of the semiconductor composite device of the present invention.

[0254] Figure 35 The semiconductor composite device 4C shown has, in addition to the capacitor array 50 being used as an interpolator for the inductor L, a... Figure 13 The semiconductor composite device 3 shown has the same structure.

[0255] Similarly, in Figure 10 The semiconductor composite device 2 shown Figure 16 The semiconductor composite device 2A shown Figure 17 In the semiconductor composite device 2B shown, the capacitor array 50 can also be used as an interpolator for the inductor L.

[0256] The semiconductor composite device of the present invention may also include multiple capacitor arrays. For example, when the semiconductor composite device of the present invention includes two capacitor arrays, viewed from the mounting surface of the wiring substrate, only one capacitor array may be arranged at the position overlapping with the load, or both capacitor arrays may be arranged at the position overlapping with the load.

[0257] Figure 36 This is a cross-sectional view schematically illustrating a fourth modified example of the semiconductor composite device of the present invention.

[0258] Figure 36 The semiconductor composite device 4D shown includes a first capacitor array 51 and a second capacitor array 52. ​​The first capacitor array 51 is disposed on a mounting surface of the wiring substrate 40. On the other hand, the second capacitor array 52 is embedded in the wiring substrate 40.

[0259] The load 30 is connected to a first capacitor array 51 on the wiring substrate 40. Viewed from the mounting surface of the wiring substrate 40, at least a portion of the first capacitor array 51 is disposed at a position overlapping with the load 30. Furthermore, viewed from the mounting surface of the wiring substrate 40, at least a portion of a second capacitor array 52 is disposed at a position overlapping with the load 30.

[0260] exist Figure 36 In the semiconductor composite device 4D shown, the first capacitor array 51 and the second capacitor array 52 are both used as output capacitors for smoothing the output voltage.

[0261] Figure 36 The semiconductor composite device 4D shown has in Figure 34 The semiconductor composite device 4B shown has a structure in which a capacitor array is built into the wiring substrate 40. Alternatively, for example, it could be... Figure 35 The semiconductor composite device 4C shown has a built-in capacitor array structure in its wiring substrate 40. Alternatively, it can be a combination of... Figure 34 The semiconductor composite device 4B shown and Figure 35 The structure shown is formed by combining a capacitor array used as an interpolator for a load 30 and a capacitor array used as an interpolator for an inductor L. Furthermore, the capacitor array can also be embedded in the wiring substrate 40.

[0262] For example, in a semiconductor composite device having two capacitor arrays, where only one capacitor array is configured to overlap with the load, the other capacitor array can also be configured near the switching element. In this case, the other capacitor array can, for example, be used as an input capacitor for smoothing the input voltage.

[0263] Figure 37 This is a cross-sectional view schematically illustrating a fifth modified example of the semiconductor composite device of the present invention. Figure 38 It is a circuit diagram of a semiconductor composite device with an input capacitor.

[0264] Figure 37 The semiconductor composite device 4E shown includes a first capacitor array 51 and a second capacitor array 52. ​​Both the first capacitor array 51 and the second capacitor array 52 are integrated into the wiring substrate 40.

[0265] The load 30 is disposed on a mounting surface of the wiring substrate 40. Viewed from the mounting surface of the wiring substrate 40, at least a portion of the first capacitor array 51 is disposed at a position overlapping with the load 30. On the other hand, the second capacitor array 52 is disposed near the switching element SW, and is not disposed at a position overlapping with the load 30 when viewed from the mounting surface of the wiring substrate 40.

[0266] exist Figure 37 In the semiconductor composite device 4E shown, the first capacitor array 51 is used, for example, as an output capacitor for smoothing the output voltage, while the second capacitor array 52 is used, for example, as an input capacitor for smoothing the input voltage (see reference). Figure 38 ).

[0267] Furthermore, the first capacitor array 51 may not be built into the wiring substrate 40. Similarly, the second capacitor array 52 may not be built into the wiring substrate 40.

[0268] In the semiconductor composite device of the present invention, the load may also include a semiconductor element and a packaging substrate on which the semiconductor element is mounted.

[0269] Figure 39 This is a cross-sectional view schematically illustrating a sixth modified example of the semiconductor composite device of the present invention.

[0270] exist Figure 39 In the semiconductor composite device 4F shown, the load 30A includes a semiconductor element 31 and a packaging substrate 32 on which the semiconductor element 31 is mounted. Figure 39 The semiconductor composite device 4F shown has the same characteristics as the one shown, except for the different load structure. Figure 2 The semiconductor composite device 1 shown has the same structure.

[0271] In the semiconductor composite device of the present invention, a capacitor array may also be built into a package substrate on which semiconductor elements are mounted. The capacitor array built into the package substrate can be positioned at a location overlapping the load. Furthermore, other capacitor arrays may be mounted or built into a wiring substrate. In this case, the other capacitor arrays may be positioned as output capacitors at a location overlapping the load, or as input capacitors near the switching elements.

[0272] Figure 40 This is a cross-sectional view schematically illustrating a seventh modified example of the semiconductor composite device of the present invention.

[0273] Figure 40 The semiconductor composite device 4G shown includes a first capacitor array 51 and a second capacitor array 52. ​​The load 30A includes a semiconductor element 31 and a packaging substrate 32 on which the semiconductor element 31 is mounted. The first capacitor array 51 is integrated into the packaging substrate 32. Conversely, the second capacitor array 52 is integrated into the wiring substrate 40.

[0274] Viewed from the mounting surface of the wiring substrate 40, at least a portion of the first capacitor array 51 is disposed at a position overlapping with the load 30A. Furthermore, viewed from the mounting surface of the wiring substrate 40, at least a portion of the second capacitor array 52 is disposed at a position overlapping with the load 30A.

[0275] exist Figure 40 In the semiconductor composite device 4G shown, the first capacitor array 51 and the second capacitor array 52 are both used as output capacitors for example to smooth the output voltage.

[0276] Figure 41 This is a cross-sectional view schematically illustrating an eighth modified example of the semiconductor composite device of the present invention.

[0277] Figure 41 The semiconductor composite device 4H shown is positioned near the switching element SW at a point where the second capacitor array 52 is arranged. Figure 40 The semiconductor composite device shown is different from 4G.

[0278] exist Figure 41 In the semiconductor composite device 4H shown, the first capacitor array 51 is used, for example, as an output capacitor for smoothing the output voltage, while the second capacitor array 52 is used, for example, as an input capacitor for smoothing the input voltage (see reference). Figure 38 ).

[0279] In the semiconductor composite device of the present invention, a power supply circuit including a transformer may also be configured.

[0280] Figure 42This is an example of a circuit diagram of a semiconductor composite device that constitutes a power supply circuit including a transformer.

[0281] exist Figure 42 In the example shown, a power supply circuit containing a transformer TR is constructed in the second channel CH2.

[0282] The semiconductor composite device of the present invention may also include a power supply module.

[0283] Figure 43 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device equipped with a power supply module. Figure 44 This is an example of a circuit diagram of a semiconductor composite device with a power supply module.

[0284] Figure 43 The semiconductor composite device 5A shown includes a power module 70 containing active components (not shown). Figure 43 In the semiconductor composite device 5A shown, the load 30 is disposed on one mounting surface of the wiring substrate 40, the capacitor array 50 is built into the wiring substrate 40, and the power supply module 70 is disposed on the other mounting surface of the wiring substrate 40. Figure 43 As shown, the preferred power module 70 is positioned where, when viewed from the mounting surface of the wiring board 40, at least a portion of it overlaps with the load 30 and the capacitor array 50.

[0285] like Figure 43 and Figure 44 As shown, the inductor L can also be mounted on the power module 70. Additionally, as... Figure 44 As shown, the power module 70 may also include a switching element SW.

[0286] Figure 45 This is another example of a circuit diagram of a semiconductor composite device with a power supply module.

[0287] like Figure 45 As shown, power module 70 may also include a transformer TR. Power module 70 may also omit the inductor L and the pre-amplifier stage of transformer TR (in... Figure 45 The switching element SW (located on the left) is shown in the middle. Alternatively, the switching element SW or inductor L of the first channel CH1 can also be included in the power module 70.

[0288] Figure 46 This is a cross-sectional view schematically illustrating another example of a semiconductor composite device with a power supply module.

[0289] exist Figure 46In the semiconductor composite device 5B shown, the power module 70 is disposed on one mounting surface of the wiring substrate 40 at a position that does not overlap with the load 30 and the capacitor array 50 when viewed from the mounting surface of the wiring substrate 40. An inductor L may also be mounted in the power module 70. The power module 70 may also include a switching element SW. Additionally, the power module 70 may also include a transformer TR.

[0290] In the case where the semiconductor composite device of the present invention includes a power supply module, a capacitor array may also be included in the substrate of the power supply module.

[0291] Figure 47 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device in which the substrate of a power module contains an array of capacitors. Figure 48 This is a cross-sectional view schematically illustrating another example of a semiconductor composite device in which the substrate of a power module contains an array of capacitors.

[0292] exist Figure 47 In the semiconductor composite device 5C shown, a capacitor array 50 is included in the substrate of the power module 70.

[0293] exist Figure 48 In the semiconductor composite device 5D shown, the substrate of the power module 70 includes a first capacitor array 51, and the wiring substrate 40 contains a second capacitor array 52.

[0294] In the semiconductor composite device of the present invention, the passive element constituting the voltage regulator may also include an inductor array comprising a plurality of inductors arranged in a planar configuration.

[0295] Figure 49 This is a cross-sectional view schematically illustrating an example of a semiconductor composite device containing an array of inductors. Figure 50 Viewed from another mounting surface of the wiring board Figure 49 A top view of the semiconductor composite device shown. Figure 51 This is an example of a circuit diagram of a semiconductor composite device that includes an array of inductors.

[0296] exist Figure 49 and Figure 50 In the semiconductor composite device 6 shown, the passive element 20 includes an inductor array 80. Figure 50 and Figure 51 In the example shown, the inductor array 80 is configured in the second channel CH2. The inductor array 80 may or may not be mounted in the power module 70. The semiconductor composite device 6 may also not have a power module 70.

[0297] Explanation of reference numerals in the attached figures

[0298] 1, 2, 2A, 2B, 3, 4A, 4B, 4C, 4D, 4E, 4F, 4G, 4H, 5A, 5B, 5C, 5D, 6, 100… Semiconductor composite device; 10… Active component; 20… Passive component; 30, 30A… Load; 31… Semiconductor component; 32… Packaging substrate; 40, 400… Wiring substrate; 45… Circuit layer; 50, 500… Capacitor array; 51… First capacitor array; 52… Second capacitor array Container array; 61, 610… First connection terminal; 62, 620… Second connection terminal; 70… Power module; 80… Inductor array; 210… Capacitor section; 211… Anode plate; 212… Core; 214… Porous section; 216… Cathode layer; 216A… Carbon layer; 216B… Copper layer; 220, 222… Conductive section; 224… Conducting conductor; 230… Insulating section; 230A… First insulating section; 230B… Second insulating section Insulating part; 230C… Third insulating part; 230D… Fourth insulating part; 240… Anode bonding layer; 240A… First anode bonding layer; 240B… Second anode bonding layer; 242A… First resin filling part; 242B… Second resin filling part; 410… Core layer; 420… Wiring layer; 430, 430A… Cavity; 440… Tape; 450… Insulating layer; 460… Through hole; 470… First conductor part; 480… Second conductor part Conductor section; 490…through hole; CH1…first channel; CH2…second channel; CH3…third channel; C1, C2…output capacitors; L1, L2, L3, L4, L…inductors; SW1, SW2, SW3, SW4, SW…switching elements; TH1, TH2…through hole conductors; TH11…first through hole conductor; TH12…second through hole conductor; TR…transformer; h11…first through hole; h12…second through hole.

Claims

1. A semiconductor composite device, comprising: Active and passive components are configured corresponding to multiple channels and constitute a voltage regulator; The load is supplied with a DC voltage regulated by the aforementioned voltage regulator and includes semiconductor elements; and The wiring board is electrically connected to the aforementioned active components, passive components, and load. The active components constituting the voltage regulator include switching elements. The passive components constituting the voltage regulator include capacitors, and the plurality of capacitors disposed in the channel comprise a capacitor array, wherein, The aforementioned capacitor array comprises multiple capacitor sections arranged in a planar configuration and integrally formed. The capacitor array described above has a plurality of through-hole conductors penetrating the capacitor array in a direction perpendicular to the mounting surface of the wiring substrate. Viewed from the mounting surface of the aforementioned wiring substrate, at least a portion of the aforementioned capacitor array is positioned at a location overlapping with the aforementioned load. The passive components constituting the voltage regulator also include an inductor, which is connected between the switching element and the load. The inductor configured in at least one channel is electrically connected to the through-hole conductor passing through the capacitor array. Viewed from the mounting surface of the wiring board, at least a portion of the inductor electrically connected to the via conductor is positioned overlapping the capacitor array. The channel that electrically connects the aforementioned inductor to the aforementioned through-hole conductor constitutes a multiphase power supply that connects multiple power supply circuits in parallel. The through-hole conductor connected to the aforementioned inductor is connected to the anode of the aforementioned capacitor, wherein the aforementioned inductor is configured according to each of the aforementioned power supply circuits constituting the aforementioned multiphase power supply. The plurality of through-hole conductors connected to each of the aforementioned inductors are electrically connected via the anode of the aforementioned capacitor.

2. The semiconductor composite device according to claim 1, wherein, The aforementioned integrally molded capacitor array is connected to two or more of the aforementioned multiple channels.

3. The semiconductor composite device according to claim 1, wherein, The inductor, which is electrically connected to the through-hole conductor, is positioned on the side opposite to the load when viewed from the capacitor array.

4. The semiconductor composite device according to claim 3, wherein, The inductor, which is electrically connected to the through-hole conductor, is disposed on the mounting surface of the wiring substrate.

5. The semiconductor composite device according to any one of claims 1, 3, and 4, wherein, In the channel through which the inductor and the via conductor are electrically connected, when viewed from the mounting surface of the wiring substrate, at least a portion of the switching element is positioned overlapping the capacitor array.

6. The semiconductor composite device according to any one of claims 1 to 4, wherein, At least one of the through-hole conductors that pass through the capacitor array is connected to the anode of the capacitor.

7. The semiconductor composite device according to claim 6, wherein, The capacitor described above includes an anode plate made of metal. The through-hole conductor connected to the anode of the capacitor is connected to the end face of the anode plate.

8. The semiconductor composite device according to claim 6, wherein, The passive components constituting the voltage regulator also include an inductor, which is connected between the switching element and the load. The inductor configured in at least one channel is electrically connected to the through-hole conductor connected to the anode of the capacitor.

9. The semiconductor composite device according to any one of claims 1 to 4, wherein, At least one of the through-hole conductors that pass through the capacitor array is connected to the cathode of the capacitor.

10. The semiconductor composite device according to any one of claims 1 to 4, wherein, The capacitor array described above comprises multiple capacitor sections formed by dividing a capacitor sheet consisting of a single aluminum element.

11. The semiconductor composite device according to any one of claims 1 to 4, wherein, The capacitor array is embedded in the wiring substrate.

12. A method for manufacturing a semiconductor composite device, comprising the method for manufacturing the semiconductor composite device of claim 11, wherein: The process of forming cavities in a wiring substrate; The process of arranging the capacitor array inside the cavity described above; The process of electrically connecting the above-mentioned wiring substrate and the above-mentioned capacitor array; and The process of embedding the capacitor array into the wiring substrate by sealing the cavity.

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