Ion implantation for reducing hydrogen incorporation in amorphous silicon
By using low-temperature ion implantation technology, hydrogen bonds are broken on semiconductor substrates using helium, neon, argon, or silicon ions, which solves the negative impact of hydrogen doping on the performance of thin-film transistors, enables the formation of thin films with low hydrogen content, and improves device performance and reliability.
CN115943480BActive Publication Date: 2026-06-26APPLIED MATERIALS INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2021-07-21
- Publication Date
- 2026-06-26
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Figure CN115943480B_ABST
Abstract
An exemplary method of semiconductor processing can include forming an amorphous silicon layer on a semiconductor substrate. The amorphous silicon layer can be characterized by a first hydrogen incorporation amount. The method can include performing a beamline ion implantation process or a plasma doping process on the amorphous silicon layer. The method can include removing hydrogen from the amorphous silicon layer until a second hydrogen incorporation amount that is less than the first hydrogen incorporation amount.
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