Nitride-based semiconductor devices and their manufacturing methods
By introducing diodes and transistors of specific specifications into nitride-based semiconductor devices, the problem of overvoltage breakdown during the miniaturization of HEMTs was solved, thereby improving the reliability and stability of the devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INNOSCIENCE (ZHUHAI) TECH CO LTD
- Filing Date
- 2022-11-21
- Publication Date
- 2026-05-26
AI Technical Summary
In the miniaturization of high electron mobility transistors (HEMTs), how to maintain the reliability of the device, especially to avoid the risk of transistor overvoltage breakdown in high power and high frequency applications.
In a nitride-based semiconductor device, first and second diodes are introduced and connected to the gate and drain of a transistor, respectively. This ensures that the breakdown voltage of the diodes is different from that of the transistor, thereby clamping the transistor under overvoltage conditions and preventing overvoltage breakdown.
By using the clamping effect of the diode, the risk of transistor breakdown under overvoltage conditions is effectively reduced, ensuring that the device operates within a safe voltage range and improving the device's reliability and stability.
Smart Images
Figure CN115966566B_ABST