Display panel and display device

Abstract

The application relates to a display panel and a display device. The display panel comprises a substrate, a light-emitting layer and a driving array layer. The driving array layer is located on the substrate and between the light-emitting layer and the substrate. The light-emitting layer comprises a sub-pixel. The driving array layer comprises a transistor. The transistor is configured to control the corresponding sub-pixel. The transistor further comprises a semiconductor part closer to the substrate than other structures in the transistor. A potential improvement part is arranged between the transistor and the substrate. The orthographic projection of the semiconductor part on the potential improvement part is located in the potential improvement part. The potential improvement part is configured to stabilize the potential of the transistor and shield the influence of charges on the side of the potential improvement part away from the transistor on the transistor. A light line improvement part is arranged on the side of the potential improvement part facing the transistor, and the light line improvement part is located between the potential improvement part and the transistor. The light line improvement part is configured to reduce the light reflected by the potential improvement part to the transistor.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and display device. Background Technology

[0002] Among related technologies, Organic Light Emitting Diode (OLED) display technology, as the benchmark for next-generation display technology, boasts advantages such as wide color gamut, wide viewing angle, high contrast, fast response, low power consumption, and suitability for flexible substrates. Consequently, it has experienced rapid development. During this development, the application areas of OLED displays have continuously expanded, thus placing increasingly higher demands on their performance.

[0003] In recent years, many OLED displays have adopted a BSM (Bright Spot Surface) design to meet higher requirements. However, the display panel still suffers from color brightness variations under high-brightness lighting. Summary of the Invention

[0004] This application provides a display panel and display device to address all or part of the shortcomings in the related art.

[0005] According to a first aspect of the embodiments of this application, a display panel is provided, comprising: a substrate, a light-emitting layer, and a driving array layer;

[0006] The driving array layer is located on the substrate, the light-emitting layer is located on the side of the driving array layer away from the substrate, and the driving array layer is located between the light-emitting layer and the substrate;

[0007] The light-emitting layer includes sub-pixels;

[0008] The driving array layer includes transistors; the transistors are configured to control corresponding sub-pixels; the transistors also include semiconductor portions that are closer to the substrate than other structures within the transistor; a potential improvement portion is provided between the transistor and the substrate; the orthographic projection of the semiconductor portion onto the potential improvement portion is located within the potential improvement portion; the potential improvement portion is configured to stabilize the potential of the transistor and shield the transistor from the influence of charges on the side of the potential improvement portion away from the transistor.

[0009] The potential improvement section has a light improvement section on the side facing the transistor, and the light improvement section is located between the potential improvement section and the transistor; the light improvement section is configured to reduce the light reflected from the potential improvement section to the transistor.

[0010] In some embodiments, the orthogonal projection of the transistor onto the potential improvement section is located within the potential improvement section;

[0011] The light-improving section covers the potential-improving section and is in direct contact with the potential-improving section.

[0012] In some embodiments, the thickness of the light-improving portion is greater than or equal to 10 nanometers and less than or equal to 100 nanometers.

[0013] In some embodiments, the material of the potential improvement section includes a metallic material; the material of the light improvement section includes a light-absorbing material.

[0014] In some embodiments, the light-absorbing material includes molybdenum oxide.

[0015] In some embodiments, the materials of the semiconductor portion and the light-improving portion include amorphous silicon.

[0016] In some embodiments, the refractive index of the light-improving portion is lower than that of the potential-improving portion, and the thickness of the light-improving portion is one-quarter of the wavelength of the light incident on the light-improving portion.

[0017] In some embodiments, in a direction away from the substrate, the light-improving portion includes at least one first-improving portion and at least one second-improving portion that are sequentially alternately arranged and stacked on top of each other;

[0018] The refractive index of the first improvement portion is greater than that of the second improvement portion, and the thicknesses of both the first improvement portion and the second improvement portion are one-quarter of the wavelength of the light incident on the light improvement portion.

[0019] In some embodiments, the light-improving portion and the potential-improving portion are configured to be formed simultaneously by etching after material deposition.

[0020] According to a second aspect of the embodiments of this application, a display device is provided, including any of the above-described display panels.

[0021] As can be seen from the embodiments of this application, by providing a light improvement section between the potential improvement section and the transistor, and configuring the light improvement section to reduce the light reflected from the potential improvement section to the transistor, it is possible to prevent light from shining on the transistor and causing the transistor to experience characteristic shift. In turn, it is possible to avoid the problem that the color brightness of the display panel will change under high-brightness illumination.

[0022] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0023] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0024] Figure 1 This is a schematic diagram of the structure of a display panel according to an embodiment of this application;

[0025] Figure 2 This is a schematic diagram showing the reflectivity of the potential improvement unit and the light improvement unit as a whole under different wavelengths of light in different situations according to embodiments of this application;

[0026] Figure 3 This is a schematic diagram of the structure of another display panel according to an embodiment of this application. Detailed Implementation

[0027] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0028] This application embodiment provides a display panel 10, Figure 1 This is a schematic diagram of one structure of the display panel 10. For example... Figure 1 As shown, the display panel 10 includes: a substrate 11, a light-emitting layer 12, and a driving array layer 13.

[0029] The driving array layer 13 is located on the substrate 11, and the light-emitting layer 12 is located on the side of the driving array layer 13 away from the substrate 11. The driving array layer 13 is located between the light-emitting layer 12 and the substrate 11.

[0030] The light-emitting layer 12 includes sub-pixels 121.

[0031] The driving array layer 13 includes a transistor 131. The transistor 131 is configured to control a corresponding sub-pixel 121. The transistor 131 also includes a semiconductor portion 1311, which is closer to the substrate 11 than other structures within the transistor 131. A potential improvement portion 132 is provided between the transistor 131 and the substrate 11. The orthogonal projection of the semiconductor portion 1311 onto the potential improvement portion 132 lies within the potential improvement portion 132. The potential improvement portion 132 is configured to stabilize the potential of the transistor 131 and shield the transistor 131 from the influence of charges on the side of the potential improvement portion 132 away from the transistor 131.

[0032] A light-improving section 133 is provided on the side of the potential improvement section 132 facing the transistor 131, and the light-improving section 133 is located between the potential improvement section 132 and the transistor 131. The light-improving section 133 is configured to reduce the light reflected from the potential improvement section 132 to the transistor 131.

[0033] During operation, the display panel 10 generates heat and other influencing factors. This heat causes free ions to form within the transistor 131, specifically in the semiconductor section 1311 of the transistor 131. If these free ions leave the semiconductor section 1311 and enter other film layers of the display panel 10, the number of ions within the semiconductor section 1311 changes. This change in the number of ions affects various characteristic parameters of the semiconductor section 1311, causing a characteristic shift in the semiconductor section 1311, which in turn causes a characteristic shift in the transistor 131 as a whole. This change in the characteristic parameters of the transistor 131 causes the light emission of the corresponding controlled sub-pixel 121 to deviate from a preset value, thus affecting the normal light emission of the display panel 10.

[0034] Since the semiconductor section 1311 is closer to the substrate 11 than other structures within the transistor 131, ions primarily leave the semiconductor section 1311 from the side facing the substrate 11; that is, ions primarily leave the transistor 131 from the side facing the substrate 11. Therefore, by providing the potential improvement section 132, the potential of the transistor 131 can be stabilized by restricting the departure of ions from the semiconductor section 1311. Specifically, the material of the potential improvement section 132 may include a metallic material. The potential improvement section 132 can restrict the departure of ions from the transistor 131 through a relatively dense metallic structure, thereby stabilizing the potential of the transistor 131. Simultaneously, the use of a metallic material in the potential improvement section 132 can also shield the transistor 131 from the influence of charges on the side of the potential improvement section 132 away from the transistor 131.

[0035] However, since the potential improvement unit 132 is made of a metallic material, when the display panel 10 is in a high-brightness environment, light incident on the potential improvement unit 132 is reflected to the transistor 131. The semiconductor portion 131 within the transistor 131 is primarily irradiated by the light reflected from the potential improvement unit 132. After being irradiated, the semiconductor portion 1311 receives and absorbs this reflected light. This absorption of reflected light causes a photoelectric effect, resulting in a characteristic shift in the semiconductor portion 1311, thus affecting the normal display of the display panel 10; that is, the color and brightness of the display panel 10 change.

[0036] By providing a light improvement section 133 between the potential improvement section 132 and the transistor 131, and by configuring the light improvement section 133 to reduce the light reflected from the potential improvement section 132 to the transistor 131, it is possible to prevent light from shining on the transistor 131 and causing the transistor 131 to deviate in characteristics. In turn, it is possible to avoid the problem that the color brightness of the display panel 10 will change under high brightness illumination.

[0037] In some embodiments, such as Figure 1 As shown, the display panel 10 further includes a pixel definition layer 14 and an anode 15. The pixel definition layer 14 and the light-emitting layer 12 are located on the same layer and are adjacent to each other. The pixel definition layer 14 includes a pixel hole 141, and a sub-pixel 121 is located within the pixel hole 141. The anode 15 is located between the sub-pixel 121 and the driving array layer 13, and is electrically connected to the sub-pixel 121.

[0038] Transistor 131 also includes a gate 1315. Semiconductor portion 1311 includes a source portion 1312, a trench portion 1313, and a drain portion 1314. Gate 1315 is configured to control the generation of a conductive trench in the trench portion 1313, thereby controlling the conduction or disconnection of the source portion 1312 and the drain portion 1314.

[0039] The driving array layer 13 also includes a source electrode 134, a drain electrode 135, a buffer layer 136, an insulating layer 137, a planarization layer 138, and a capacitor electrode 139. The source electrode 134 is electrically connected to the source portion 1312, the drain electrode 135 is electrically connected to the drain portion 1314, and the drain electrode 135 is also electrically connected to the anode 15 and the capacitor electrode 139. Specifically, the source electrode 134 and the source portion 1312, the drain electrode 135 and the drain portion 1314, and the drain electrode 135 and the anode 15 and the capacitor electrode 139 can all be electrically connected via conductive vias. The capacitor electrode 139 is configured to form a capacitor with the gate 1315, collecting carriers when the transistor 131 is turned on and supplies power to the sub-pixel 121. When the transistor 131 is turned off, it continues to supply power to the sub-pixel 121 to extend the light-emitting time of the sub-pixel 121 and reduce power consumption.

[0040] The buffer layer 136 is located between the potential improvement section 132 and the substrate 11.

[0041] The insulating layer 137 includes a first insulating layer 1371, a second insulating layer 1372, a third insulating layer 1373, and a fourth insulating layer 1374. The first insulating layer 1371 is located on the side of the buffer layer 136 away from the substrate 11; the second insulating layer 1372 is located on the side of the first insulating layer 1371 away from the substrate 11; the third insulating layer 1373 is located on the side of the second insulating layer 1372 away from the substrate 11; and the fourth insulating layer 1374 is located on the side of the third insulating layer 1373 away from the substrate 11. Furthermore, the potential improvement section 132 and the light improvement section 133 are located between the first insulating layer 1371 and the buffer layer 136; the semiconductor section 1311 is located between the first insulating layer 1371 and the second insulating layer 1372; the gate electrode 1315 is located between the second insulating layer 1372 and the third insulating layer 1373; and the capacitor electrode 139 is located between the third insulating layer 1373 and the fourth insulating layer 1374. Although the insulating layer 137 includes a first insulating layer 1371, a second insulating layer 1372, a third insulating layer 1373, and a fourth insulating layer 1374, in reality, the first insulating layer 1371, the second insulating layer 1372, the third insulating layer 1373, and the fourth insulating layer 1374 all serve an insulating function. The only difference is that they are not formed at the same time, and therefore there is a difference in the order in which they are formed.

[0042] Planarization layer 138 includes a first planarization layer 1381 and a second planarization layer 1382. The first planarization layer 1381 is located on the side of the fourth insulating layer 1374 away from the substrate 11, and the second planarization layer 1382 is located on the side of the first planarization layer 1381 away from the substrate 11. The second planarization layer 1382 is located between the first planarization layer 1381, the anode 15, and the pixel definition layer 14. The source electrode 134 and a portion of the drain electrode 135 are located between the first planarization layer 1381 and the fourth insulating layer 1374, while another portion of the drain electrode 135 is located between the first planarization layer 1381 and the second planarization layer 1382.

[0043] It should be noted that although electrode 134 is not electrically connected to source portion 1312, drain electrode 135 is not electrically connected to drain portion 1314, and drain electrode 135 is not electrically connected to anode 15 or capacitor electrode 139 in the accompanying drawings, this is because the complex film structure of display panel 10 makes it impossible to show the connection relationship on a single cross-section. In fact, the electrical connection relationship between the above structures can be understood by referring to the accompanying drawings and the description.

[0044] In some embodiments, such as Figure 1 As shown, the orthographic projection of transistor 131 onto potential improvement section 132 is located within potential improvement section 132. Light improvement section 133 covers potential improvement section 132 and is in direct contact with potential improvement section 132.

[0045] Since the orthographic projection of the transistor 131 onto the potential improvement section 132 is located within the potential improvement section 132, the potential improvement section 132 can further restrict ions from leaving the transistor 131, thereby further stabilizing the potential of the transistor 131. Furthermore, since the light improvement section 133 covers the potential improvement section 132 and is in direct contact with it, the amount of light that may be incident on and reflected from the potential improvement section 132 can be minimized. This further prevents light from illuminating the transistor 131 and causing characteristic shifts in the transistor 131, and consequently, further prevents changes in color brightness of the display panel 10 under high-brightness illumination.

[0046] In some embodiments, the thickness of the light-improving portion 133 is greater than or equal to 10 nanometers and less than or equal to 100 nanometers. Specifically, the thickness of the light-improving portion 133 may be 10 nanometers, or 25 nanometers, or 40 nanometers, or 55 nanometers, or 70 nanometers, or 85 nanometers, or 100 nanometers, but is not limited thereto; the thickness of the light-improving portion 133 may also be other thicknesses within the range of the above-mentioned thickness values.

[0047] When the thickness of the light-improving section 133 is within the above-mentioned range, the effect of the light-improving section 133 can be improved, and the characteristic shift of the transistor 131 caused by light shining on it can be further avoided. Thus, the problem of color brightness change of the display panel 10 under high-brightness illumination can be further avoided.

[0048] Preferably, the thickness of the light-improving section 133 can be 30 nanometers. When the thickness of the light-improving section 133 is 30 nanometers, it achieves the best effect in preventing light from shining on the transistor 131 and causing the transistor 131 to shift its characteristics compared to light-improving sections 133 with other thicknesses. Thus, the problem of color brightness changing under high-brightness illumination can be further avoided.

[0049] In some embodiments, the material of the potential improvement section 132 includes a metallic material. The material of the light improvement section 133 includes a light-absorbing material. By making the material of the light improvement section 133 include a light-absorbing material, light incident on the light improvement section 133 can be prevented from being reflected when it is incident on the potential improvement section 132, thereby further preventing the problem of color brightness changes of the display panel 10 under high-brightness illumination.

[0050] In some embodiments, the light-absorbing material includes molybdenum oxide. Since molybdenum oxide has excellent light-absorbing properties, by including molybdenum oxide in the material of the light-improving section 133, the light incident on the light-improving section 133 can be further absorbed, preventing this light from being reflected when it is incident on the potential-improving section 132. This further avoids the problem of color brightness changes in the display panel 10 under high-brightness illumination.

[0051] In some embodiments, the semiconductor portion 1311 and the light-improving portion 133 are made of amorphous silicon. Since the light-improving portion 133 includes both molybdenum oxide and amorphous silicon, a molybdenum oxide / amorphous silicon composite material layer can be formed in the light-improving portion 133. Because the semiconductor portion 1311 is also made of amorphous silicon, the sensitive wavelengths of the structures in the semiconductor portion 1311 and the amorphous silicon portion of the light-improving portion 133 are the same. Furthermore, since the semiconductor portion 1311 absorbs this light after being irradiated and is thus interfered with, the structure of the amorphous silicon portion in the light-improving portion 133 can also absorb light of these wavelengths. This further improves the absorption effect of the light-improving portion 133 on incident light, especially the absorption effect on the sensitive wavelengths of amorphous silicon. This light is reflected when it is incident on the potential improvement portion 132, thus avoiding the problem of color brightness changes in the display panel 10 under high-brightness illumination.

[0052] In some embodiments, Figure 2 The diagram shows the reflectivity of the potential improvement unit 132 and the light improvement unit 133 as a whole under different wavelengths of light. Figure 2 The horizontal axis represents the wavelength of light incident on the potential improvement unit 132 and the light improvement unit 133, in nanometers. Figure 2 The vertical axis represents the reflectivity of the potential improvement unit 132 and the light improvement unit 133. It should be noted that, although... Figure 2 The values ​​on the vertical axis are not shown as percentages, but one can imagine that... Figure 2 The vertical axis represents the range from 0% to 70%.

[0053] exist Figure 2 In the diagram, curve 31 represents the reflectivity when the material of the light-improving section 133 is a pure metallic material and its thickness is 100 nanometers. Curve 32 represents the reflectivity when the material of the potential-improving section 132 is a metallic material, the material of the light-improving section 133 is molybdenum oxide, and the thickness of the light-improving section 133 is 100 nanometers. Curve 33 represents the reflectivity when the material of the potential-improving section 132 is a metallic material, the material of the light-improving section 133 is molybdenum oxide, and the thickness of the light-improving section 133 is 30 nanometers.

[0054] Depend on Figure 2 As shown in the information, the average reflectance of the first curve 31 is 55.52%, and the average reflectance of the second curve 32 is 9.33%. Therefore, the light-improving section 133 using molybdenum oxide material can greatly improve the light reflected at the potential-improving section 132 and the light-improving section 133, thereby preventing light from being reflected to the semiconductor section 1311.

[0055] Meanwhile, compared to the second curve 32, the reflectivity of the third curve 33 is optimized to a certain extent across all wavelengths. Therefore, when the material of the light-improving section 133 includes molybdenum oxide and the thickness of the light-improving section 133 is 30 nanometers, the overall effect of the light-improving section 133 in avoiding reflected light can be maximized.

[0056] In some embodiments, the refractive index of the light-improving portion 133 is lower than that of the potential-improving portion 132, and the thickness of the light-improving portion 133 is one-quarter of the wavelength of the light incident on the light-improving portion 133.

[0057] This configuration allows reflected light from the surface of the light-improving section 133 away from the substrate 11 to interfere with and extinct the reflected light from the surface at the interface between the light-improving section 133 and the potential-improving section 132. Furthermore, since silicon has a strong absorption capacity for light with wavelengths of 1000 nanometers and below, interference extinction can be used to focus on extinct light in this wavelength range. For other wavelengths, due to the decreased absorption capacity of silicon for light above 1000 nanometers, this light is unlikely to be absorbed by the semiconductor section 1311 even when incident on it. Therefore, it will not affect the operation of the semiconductor section 1311. Thus, the light-improving section 133 can prevent the reflected light from being absorbed by the semiconductor section 1311, thereby preventing changes in color brightness of the display panel 10 under high-brightness illumination.

[0058] In some embodiments, Figure 3 This is a schematic diagram of another structure of the display panel 10. (As shown...) Figure 3 As shown, in the direction away from the substrate 11, the light improvement section 133 includes at least one first improvement section 1331 and at least one second improvement section 1332 that are arranged alternately and stacked on top of each other.

[0059] The refractive index of the first improvement section 1331 is greater than that of the second improvement section 1332, and the thicknesses of the first improvement section 1331 and the second improvement section 1332 are both one-quarter of the wavelength of the light incident on the light improvement section 133.

[0060] This configuration allows the reflected light from the surface of the second improvement section 1332 away from the substrate 11 to interfere with and extinct the reflected light from the surface of the interface between the first improvement section 1331 and the second improvement section 1332. Furthermore, since silicon has a strong absorption capacity for light with wavelengths of 1000 nanometers and below, this wavelength range can be extincted by focusing the interference extinction. For other wavelengths, due to the decreased absorption capacity of silicon for light above 1000 nanometers, these rays are difficult for the semiconductor section 1311 to absorb even when incident on it. Therefore, it will not affect the operation of the semiconductor section 1311. Thus, the light improvement section 133 can prevent the reflected light from being absorbed by the semiconductor section 1311, thereby preventing changes in color brightness of the display panel 10 under high-brightness illumination.

[0061] It should be noted that, although Figure 3 Only one layer of first improvement section 1331 and one layer of second improvement section 1332 are shown, but it is not limited to this. The light improvement section 133 may also include other numbers of first improvement sections 1331 and other numbers of second improvement sections 1332.

[0062] In some embodiments, the light-improving portion 133 and the potential-improving portion 132 are configured to be formed simultaneously by etching after material deposition. This configuration allows the light-improving portion 133 and the potential-improving portion 132 to be formed simultaneously after material deposition, thereby simplifying the process and reducing manufacturing costs.

[0063] This application also provides a display device, including any of the above-described display panels 10.

[0064] The above embodiments of this application can complement each other without causing conflict.

[0065] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0066] The term “multiple” means two or more, unless otherwise expressly defined.

[0067] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0068] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A display panel, characterized in that, include: Substrate, light-emitting layer and driving array layer; The driving array layer is located on the substrate, the light-emitting layer is located on the side of the driving array layer away from the substrate, and the driving array layer is located between the light-emitting layer and the substrate; The light-emitting layer includes sub-pixels; The driving array layer includes transistors; the transistors are configured to control corresponding sub-pixels; the transistors also include semiconductor portions that are closer to the substrate than other structures within the transistors; a potential improvement portion is provided between the transistors and the substrate; The orthographic projection of the semiconductor portion onto the potential improvement portion is located within the potential improvement portion; the potential improvement portion is configured to stabilize the potential of the transistor and shield the transistor from the influence of charges on the side of the potential improvement portion away from the transistor. The potential improvement section has a light improvement section on the side facing the transistor, and the light improvement section is located between the potential improvement section and the transistor; the light improvement section is configured to reduce the light reflected from the potential improvement section to the transistor.

2. The display panel according to claim 1, characterized in that, The orthogonal projection of the transistor onto the potential improvement section is located within the potential improvement section; The light-improving section covers the potential-improving section and is in direct contact with the potential-improving section.

3. The display panel according to claim 2, characterized in that, The thickness of the light-improving part is greater than or equal to 10 nanometers and less than or equal to 100 nanometers.

4. The display panel according to claim 2, characterized in that, The material of the potential improvement section includes a metallic material; the material of the light improvement section includes a light-absorbing material.

5. The display panel according to claim 4, characterized in that, The light-absorbing material includes molybdenum oxide.

6. The display panel according to claim 4, characterized in that, The semiconductor section and the light-improving section are made of amorphous silicon.

7. The display panel according to claim 1, characterized in that, The refractive index of the light-improving section is lower than that of the potential-improving section, and the thickness of the light-improving section is one-quarter of the wavelength of the light incident on the light-improving section.

8. The display panel according to claim 1, characterized in that, In a direction away from the substrate, the light-improving portion includes at least one first-improving portion and at least one second-improving portion that are sequentially and alternately arranged and stacked on top of each other; The refractive index of the first improvement portion is greater than that of the second improvement portion, and the thicknesses of both the first improvement portion and the second improvement portion are one-quarter of the wavelength of the light incident on the light improvement portion.

9. The display panel according to claim 1, characterized in that, The light-improving portion and the potential-improving portion are configured to be formed simultaneously by etching after material deposition.

10. A display device, characterized in that, The display panel includes any one of claims 1 to 9.

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