A terahertz lattice ring odd mode chip sensor

Abstract

The application provides a terahertz lattice ring coupled mode chip sensor, which comprises a substrate and a metal unit structure, the metal unit structure comprises two open circular ring metal devices with the same shape size and a metal rod, the two open circular ring metal devices and the metal rod are welded on the substrate, the openings of the two open circular ring metal devices are both outward, symmetric about the metal rod, and the spatial distance between each open circular ring metal device and the metal rod is the same. The terahertz lattice ring coupled mode chip sensor based on the coupling effect between ring resonance and lattice mode can optimize the interaction between terahertz waves and matter in both time and space dimensions, and has great practical application significance.

Description

Technical Field

[0001] This invention relates to the field of metamaterials technology, and more specifically, to a terahertz lattice ring-coupled mode chip sensor. Background Technology

[0002] The toroidal effect refers to the resonant response caused by current flowing along the midline of a donut-shaped toroidal surface, where magnetic dipoles connect end-to-end to form a vortex distribution. Its advantages include breaking both spatial and temporal inversion symmetry and possessing many interesting properties such as magnetoelectric effects, dichroism, and non-reciprocal refraction. Its unique current and vortex field distributions typically enable strong near-field localization.

[0003] The resonant frequency of the lattice mode (Lattice effect) is determined by the lattice period of the metamaterial array and the refractive index of the mode propagation. Therefore, by changing the lattice period of the structure, the resonant coupling between the lattice mode and the plasmonic structure can be easily adjusted, thereby enhancing the quality factor.

[0004] By coupling a ring resonance and a first-order lattice mode, dual sensitivity to frequency and resonance intensity is exhibited. However, microstructures based on the coupling effect between the Toroidal effect and the Lattice mode are rarely reported in the terahertz band, and related research is still in its early stages, with a wealth of fundamental theories and a series of key cutting-edge technologies to be explored. Therefore, designing a coupling effect based on the ring resonance and lattice mode to optimize the interaction between terahertz waves and matter in both time and space has great practical significance. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a terahertz lattice ring-coupled mode chip sensor, which optimizes the interaction between terahertz waves and matter in both time and space based on the coupling effect between ring resonance and lattice mode.

[0006] To solve the above problems, the technical solution of the present invention is as follows:

[0007] A terahertz lattice ring-coupled mode chip sensor includes a substrate and a metal unit structure. The metal unit structure includes two open annular metal devices of the same shape and size and a metal rod. The two open annular metal devices and the metal rod are welded to the substrate. The openings of the two open annular metal devices are both outward and symmetrical about the metal rod. The spatial distance between each open annular metal device and the metal rod is the same.

[0008] Preferably, the substrate is square.

[0009] Preferably, the substrate is a silicon-based information chemical with a resistivity ρ ≥ 1 kΩ·cm and a thickness t of 10 to 1000 μm.

[0010] Preferably, the open-ring metal device and the metal rod are made of metal with a thickness of 0.1 μm or more.

[0011] Preferably, the outer radius length R of the open circular metal device is ≥10um, the inner radius length r is ≥5um, the opening width g is ≥2um, the length of the metal rod is ≥30um, the width is ≥2um, and the distance d between adjacent open circular metal devices and the metal rod is ≥2um.

[0012] Compared with existing technologies, the terahertz lattice ring-coupled mode chip sensor of this invention, based on the coupling effect between ring resonance and lattice modes, optimizes the interaction between terahertz waves and matter in both time and space, which has great practical application significance. The development of novel terahertz high-quality factor detection chips can be applied to the detection of cell and virus biomarkers. Attached Figure Description

[0013] Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0014] Figure 1 This is a structural diagram of a terahertz lattice ring-coupled mode chip sensor provided in an embodiment of the present invention;

[0015] Figure 2 Transmission coefficient curve of a terahertz lattice ring-coupled mode chip sensor provided in an embodiment of the present invention;

[0016] Figure 3 A schematic diagram of the surface current distribution at resonant frequency points f1 and f2 of the terahertz lattice ring-coupled mode chip sensor provided in an embodiment of the present invention;

[0017] Figure 4 The diagram shows the simulation and experimental results of the terahertz lattice ring-coupled mode chip sensor provided in the embodiments of the present invention. Detailed Implementation

[0018] The present invention will now be described in detail with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the present invention, but do not limit the invention in any way. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all fall within the protection scope of the present invention.

[0019] Specifically, Figure 1The diagram shows the structure of a terahertz lattice ring-coupled mode chip sensor provided in an embodiment of the present invention. Figure 1 As shown, the terahertz lattice ring-pair mode chip sensor includes a substrate 1 and a metal unit structure disposed on the substrate 1. The substrate 1 is square. The metal unit structure includes two open circular metal devices 21 with the same shape and size and a metal rod 22. The two open circular metal devices 21 and the metal rod 22 are welded to the substrate 1. The openings of the two open circular metal devices 21 are both outward and symmetrical about the metal rod 22. The spatial distance between each open circular metal device 21 and the metal rod 22 is the same.

[0020] The substrate is a silicon substrate with a resistivity ρ ≥ 1 kΩ·cm and a thickness t of 10 to 1000 μm. In this embodiment, the substrate 1 is a single crystal silicon with a resistivity ρ = 5 kΩ·cm and a thickness t = 500 μm. Single crystal silicon has only one crystal orientation. Using single crystal silicon as a substrate ensures that the direction of the grown epitaxial layer is consistent with the substrate, which can ensure the compactness and stability of the structure. Therefore, it is often used to make terahertz wave substrates.

[0021] The open-ring metal device 21 and the metal rod 22 are made of metal with a thickness greater than or equal to 0.1 μm. In this embodiment, both the open-ring metal device 21 and the metal rod 22 are made of pure gold with an electrical conductivity of 4.56 × 10⁻⁶. 7 S / m.

[0022] The outer radius length R of the open circular metal device is ≥10um, the inner radius length r is ≥5um, and the opening width g is ≥2um. The length l of the metal rod is ≥30um, the width w is ≥2um, and the distance d between adjacent open circular metal devices and the metal rod is ≥2um. In this embodiment, the outer radius length of the open circular metal device 21 is 15um, the inner radius length is 9um, and the opening width is 3um. The length of the metal rod 22 is 60um, the width is 6um, and the distance between adjacent open circular metal devices 21 and the metal rod 22 is 3um.

[0023] In such Figure 1 Under incident wave illumination, the toroidal effect and Lattice mode of the metal rod 22 and the open-ring metal device 21 are excited, exhibiting dual sensitivity in frequency and resonant intensity. The open ring generates a current flowing along its midline, thereby inducing a resonant response and producing a high-quality factor resonance with an extremely narrow linewidth, resulting in a strong photomatter interaction between the terahertz wave and the analyzed material. The Lattice mode, generated by collective Rayleigh scattering of the metamaterial periodic structure, strongly confines electromagnetic waves that cannot radiate to the far field.

[0024] like Figure 2As shown, when a y-polarized electromagnetic wave is incident, the two ring dipoles generate low-loss, high-quality-factor resonances at f1 and f2. The surface current distribution at these resonances is as follows. Figure 3 As shown in the figure, a circular current distribution runs from beginning to end within two open circular ring resonators, thus this resonance belongs to the ring dipole resonance. When a metal rod is added to a metamaterial unit with a ring dipole response, the radiation loss of the metamaterial is greatly suppressed and the transmission is improved due to the destructive interference of the electromagnetic field between the electric ring dipole resonance (induced by the two open circular ring resonators) and the electric dipole resonance (induced by the metal rod). Therefore, a low-loss resonance appears at f2, which is a lattice ring dipole mode, as shown in the figure. Figure 2 As shown. By adjusting the periodicity p of the metamaterial unit cell, the lattice mode and the resonant coupling with the plasmonic structure can be easily adjusted, such as... Figure 4 As shown, the experimental results agree well with the simulation results, further confirming the effectiveness of the terahertz chip sensor design using a low-loss ring dipole and lattice hybrid mode.

[0025] Compared with existing technologies, the terahertz lattice ring-coupled mode chip sensor of this invention, based on the coupling effect between ring resonance and lattice modes, optimizes the interaction between terahertz waves and matter in both time and space, which has great practical application significance. The development of novel terahertz high-quality factor detection chips can be applied to the detection of cell and virus biomarkers.

[0026] Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art can make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention. Unless otherwise specified, the embodiments and features described in this application can be arbitrarily combined with each other.

Claims

1. A terahertz lattice ring-coupled mode chip sensor, characterized in that, The sensor includes a substrate and a metal unit structure. The metal unit structure includes two open annular metal devices of the same shape and size and a metal rod. The two open annular metal devices and the metal rod are welded to the substrate. The openings of the two open annular metal devices face outward and are symmetrical about the metal rod. The spatial distance between each open annular metal device and the metal rod is the same.

2. The terahertz lattice ring-coupled mode chip sensor according to claim 1, characterized in that, The substrate is square.

3. The terahertz lattice ring-coupled mode chip sensor according to claim 1, characterized in that, The substrate is a silicon-based information chemical with a resistivity ρ ≥ 1 kΩ·cm and a thickness t of 10~1000 μm.

4. The terahertz lattice ring-coupled mode chip sensor according to claim 1, characterized in that, The open-ring metal device and the metal rod are made of metal with a thickness of ≥0.1µm.

5. The terahertz lattice ring-coupled mode chip sensor according to claim 1, characterized in that, The outer radius of the open circular metal device is R≥10um, the inner radius is r≥5um, the opening width is g≥2um, the length of the metal rod is l≥30um, the width is w≥2um, and the distance between adjacent open circular metal devices and the metal rod is d≥2um.

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