Light-emitting device and preparation method thereof

Abstract

An embodiment of the present application discloses a light-emitting device and a preparation method thereof, wherein the light-emitting device includes a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, a light-emitting layer, a third functional layer and a third electrode, wherein the patterned insulating layer, the patterned second electrode and the patterned second functional layer are sequentially stacked on the first functional layer, the light-emitting layer covers the patterned second functional layer and the first functional layer, the third functional layer and the third electrode are sequentially stacked on the light-emitting layer, one of the first electrode and the second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the second functional layer is an electron functional layer, and the other is a hole functional layer; when the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electron functional layer, the third functional layer is an electron functional layer, and the electron functional layer is close to the cathode, and the hole functional layer is close to the anode.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting device and a method for preparing the same. Background Art

[0002] In recent years, with the deepening of research on the performance of quantum dot light-emitting diodes (QDs), significant progress has been made in improving their current efficiency and lifetime. Current efficiency is directly proportional to the external quantum efficiency (EQE). However, existing QD device structures often result in an imbalance in the injection of electrons and holes, leading to poor display performance. Therefore, there is an urgent need for a QD device that can address this imbalance in hole and electron injection. Summary of the Invention

[0003] The embodiments of the present application provide a light-emitting device and a method for manufacturing the same to solve the problem of unbalanced hole and electron injection.

[0004] An embodiment of the present application provides a light-emitting device, including:

[0005] a first electrode;

[0006] a first functional layer, the first functional layer being disposed on the first electrode;

[0007] a patterned insulating layer, wherein the patterned insulating layer is disposed on the first functional layer;

[0008] a patterned second electrode, wherein the patterned second electrode is disposed on the patterned insulating layer;

[0009] a patterned second functional layer, wherein the patterned second functional layer covers the patterned second electrode;

[0010] a light-emitting layer, the light-emitting layer covering the patterned second functional layer and the first functional layer;

[0011] a third functional layer, the third functional layer being disposed on the light-emitting layer; and

[0012] a third electrode, the third electrode being disposed on the third functional layer;

[0013] Among them, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the patterned second functional layer is an electronic functional layer, and the other is a hole functional layer, when the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electronic functional layer, the third functional layer is an electronic functional layer, and the electronic functional layer is close to the cathode, and the hole functional layer is close to the anode.

[0014] Optionally, in some embodiments of the present application, the orthographic projection of the patterned second functional layer on the first functional layer is located within the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

[0015] Optionally, in some embodiments of the present application, a distance from an edge of an orthographic projection of the patterned second functional layer on the first functional layer to an edge of an orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer is greater than 5 nanometers; or,

[0016] A distance from an edge of an orthographic projection of the patterned second electrode on the first functional layer to an edge of an orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer is greater than 20 nanometers.

[0017] Optionally, in some embodiments of the present application, the thickness of the patterned insulating layer is 30 nanometers to 100 nanometers.

[0018] Optionally, in some embodiments of the present application, the anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au;

[0019] The cathode material is selected from one or a combination of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag;

[0020] The hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioctylfluorene-co-bis-N, N-phenyl-1, 4-phenylenediamine) (PFB), 4,4',4''-tris (carbazol-9-yl) triphenylamine (TCTA), 4,4'-bis (9-carbazol) biphenyl (CBP), N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1, 1'-biphenyl-4, 4'-diamine (TPD) and N, N'-diphenyl-N, N'- (1-naphthyl) -1, 1'-biphenyl-4, 4'-diamine (NPB) or a combination thereof;

[0021] The electronic functional layer material is selected from one or a combination of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, C60, GaZnO and ZnMgLiO;

[0022] The light-emitting layer is a quantum dot light-emitting layer, the material of the quantum dot light-emitting layer is selected from at least one of single-structure quantum dots and core-shell structure quantum dots, the single-structure quantum dots are selected from at least one of II-VI compounds, III-V compounds and I-III-VI compounds, and the II-VI compounds are selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe One, the III-V compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP; the I-III-VI compound is selected from at least one of CuInS2, CuInSe2 and AgInS2, the core layer of the core-shell structured quantum dots is selected from any one of the above-mentioned single-structure quantum dots, and the shell layer of the core-shell structured quantum dots is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS.

[0023] Accordingly, the present application also provides a method for preparing a light-emitting device, comprising:

[0024] providing a first electrode;

[0025] forming a first functional layer on the first electrode;

[0026] forming a patterned insulating layer on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer;

[0027] forming a patterned second electrode on the patterned insulating layer;

[0028] forming a patterned second functional layer on the patterned second electrode;

[0029] forming a light-emitting layer on the patterned second functional layer;

[0030] forming a third functional layer on the light-emitting layer;

[0031] forming a third electrode on the third functional layer;

[0032] Among them, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the patterned second functional layer is an electronic functional layer, and the other is a hole functional layer, when the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electronic functional layer, the third functional layer is an electronic functional layer, and the electronic functional layer is close to the cathode, and the hole functional layer is close to the anode.

[0033] Optionally, in some embodiments of the present application, the step of forming a patterned second electrode on the patterned insulating layer includes:

[0034] forming a second photoresist layer having a plurality of via holes on the first functional layer and the patterned insulating layer, wherein the via holes correspond to the patterned insulating layer and penetrate the second photoresist layer to expose a portion of the patterned insulating layer;

[0035] A patterned second electrode is formed in the via hole, wherein an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

[0036] Optionally, in some embodiments of the present application, the step of forming a patterned insulating layer on the first functional layer includes:

[0037] forming a first photoresist layer having a plurality of through holes on the first functional layer, wherein the through holes penetrate the first photoresist layer to expose a portion of the first functional layer;

[0038] forming a patterned insulating layer in the through hole;

[0039] removing the first photoresist layer;

[0040] forming a second photoresist layer having a plurality of via holes on the first functional layer and the patterned insulating layer, wherein the via holes are arranged corresponding to the patterned insulating layer and pass through the second photoresist layer to expose a portion of the patterned insulating layer;

[0041] A patterned second electrode is formed in the via hole, wherein an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer on the first functional layer.

[0042] Optionally, in some embodiments of the present application, the step of forming a patterned second functional layer on the patterned second electrode includes:

[0043] removing the second photoresist layer;

[0044] The patterned second electrode is oxidized to form a patterned second functional layer on the surface of the patterned second electrode, wherein the orthographic projection of the patterned second functional layer on the first functional layer is within the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer.

[0045] Optionally, in some embodiments of the present application, the patterned second electrode material includes a conductive material, and the patterned second functional layer material includes an oxide of the conductive material; or,

[0046] The second electrode is an anode, the patterned second functional layer is a hole functional layer, the anode material is selected from one or a combination of Ni and Cu, and the hole functional layer material is selected from one or a combination of nickel oxide and copper oxide; or

[0047] The second electrode is a cathode, the patterned second functional layer is an electronic functional layer, the cathode material is selected from one or a combination of Ti, Zn and Sn, and the electronic functional layer material is selected from one or a combination of TiO2, ZnO and SnO2.

[0048] Optionally, in some embodiments of the present application, the step of forming a patterned second functional layer on the patterned second electrode includes:

[0049] Depositing a material for a patterned second functional layer on the patterned insulating layer and the patterned second electrode to form a patterned second functional layer, wherein an orthographic projection of the patterned second functional layer on the first functional layer is within an orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer;

[0050] The second photoresist layer is removed.

[0051] Optionally, in some embodiments of the present application, the second electrode is an anode, the second functional layer is a hole functional layer, the anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al and Au, and the hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinyl carbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioxythiophene) Octylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazol)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) or a combination thereof; or

[0052] The second electrode is a cathode, the patterned second functional layer is an electronic functional layer, the cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, non-doped graphene, C 60 , GaZnO and ZnMgLiO or a combination of several thereof.

[0053] An embodiment of the present application discloses a light-emitting device and a preparation method thereof, wherein the light-emitting device includes a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, a light-emitting layer, a third functional layer and a third electrode, wherein the first functional layer is arranged on the first electrode, the patterned insulating layer is arranged on the first functional layer, the patterned second electrode is arranged on the patterned insulating layer, the patterned second functional layer covers the patterned second electrode, the light-emitting layer covers the patterned second functional layer and the first functional layer, and the third functional layer is arranged on the light-emitting layer; wherein, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the patterned second functional layer is an electron functional layer, and the other is a hole functional layer. When the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electron functional layer, the third functional layer is an electron functional layer, and the electron functional layer is close to the cathode, and the hole functional layer is close to the anode. In the present application, a third functional layer is provided on the light-emitting layer to improve the electron transmission efficiency, thereby balancing the injection of electrons and holes in the light-emitting layer and improving the performance of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0055] Figure 1 This is a schematic diagram of the first structure of the light-emitting device provided in an embodiment of the present application.

[0056] Figure 2 This is a schematic diagram of the second structure of the light-emitting device provided in an embodiment of the present application.

[0057] Figure 3 This is a flow chart of the method for preparing a light-emitting device provided in an embodiment of the present application.

[0058] Figure 4 It is a structural schematic diagram of a light-emitting device in the prior art.

[0059] Figure 5 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Example 1 and Comparative Example 1 of the present application.

[0060] Figure 6 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Example 1 and Comparative Example 1 of the present application.

[0061] Figure 7 This is a brightness-time diagram of a light-emitting device provided in an embodiment of the present application.

[0062] Figure 8 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Example 2 and Comparative Example 1 of the present application.

[0063] Figure 9 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Example 2 and Comparative Example 1 of the present application.

[0064] Figure 10 This is a schematic diagram of the leakage current data of the light-emitting device provided in Example 3 of the present application.

[0065] Figure 11 This is a voltage-brightness comparison diagram of the light-emitting device provided in Example 4 and Comparative Example 2 of the present application.

[0066] Figure 12 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Example 4 and Comparative Example 2 of the present application. DETAILED DESCRIPTION

[0067] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0068] The present invention provides a light-emitting device and a method for manufacturing the same. Detailed descriptions are provided below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0069] An embodiment of the present application provides a light-emitting device, which includes a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, a light-emitting layer, a third functional layer and a third electrode, wherein the first functional layer is arranged on the first electrode, the patterned insulating layer is arranged on the first functional layer, the patterned second electrode is arranged on the patterned insulating layer, the patterned second functional layer covers the patterned second electrode, the light-emitting layer covers the patterned second functional layer and the first functional layer, the third functional layer is arranged on the light-emitting layer, and the third electrode is arranged on the third functional layer; wherein, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode, and the first electrode and the third electrode are the same; one of the first functional layer and the patterned second functional layer is an electron functional layer, and the other is a hole functional layer. When the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electron functional layer, the third functional layer is an electron functional layer, and the electron functional layer is close to the cathode, and the hole functional layer is close to the anode.

[0070] In the present application, a third functional layer is provided on the light-emitting layer to improve the carrier transmission efficiency, thereby balancing the injection of electrons and holes in the light-emitting layer and improving the performance of the light-emitting device.

[0071] The following is a detailed description:

[0072] See also Figure 1 , Figure 1 Schematic diagram of the first structure of a light-emitting device provided in an embodiment of the present application. The present application provides a light-emitting device 10. The light-emitting device 10 includes a first functional layer 100, a patterned insulating layer 200, a patterned second electrode 300, a patterned second functional layer 400, a light-emitting layer 500, a third functional layer 700, a first electrode 600, and a third electrode 800.

[0073] In the present application, when the light-emitting device is an inverted light-emitting device, the first electrode is a first cathode, the first functional layer is a first electron functional layer, the patterned second functional layer is a patterned second hole functional layer, and the patterned second electrode is a patterned second anode. When the light-emitting device is an upright light-emitting device, the first electrode is a first anode, the first functional layer is a first hole functional layer, the second functional layer is a patterned second electron functional layer, and the second electrode is a second cathode.

[0074] The hole functional layer may include at least one of a hole transport layer and a hole injection layer. The electron functional layer may include at least one of an electron transport layer and an electron injection layer.

[0075] In the present application, a third functional layer is provided on the light-emitting layer to improve the carrier transmission efficiency, thereby balancing the injection of electrons and holes in the light-emitting layer and improving the performance of the light-emitting device.

[0076] The specific description is as follows.

[0077] The first electrode 600 may be a first cathode or a first anode. The thickness H of the first electrode 600 is greater than 100 nanometers. Specifically, the thickness H of the first electrode 600 may be 100 nanometers, 150 nanometers, 350 nanometers, 800 nanometers, or 900 nanometers.

[0078] In the present application, setting the thickness H of the first electrode 600 to be greater than 100 nanometers can improve the conductivity of the first electrode 600 .

[0079] In one embodiment, the first electrode 600 is a first cathode. The first cathode material is a cathode material selected from one or a combination of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag.

[0080] In another embodiment, the first electrode 600 is a first anode. The first anode material is an anode material, and the anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au.

[0081] The first functional layer 100 is disposed on the first electrode 600. The thickness h of the first functional layer 100 is 20 nm to 60 nm. Specifically, the thickness h of the first functional layer 100 can be 20 nm, 24 nm, 34 nm, 38 nm, 40 nm, 50 nm, 54 nm, or 60 nm.

[0082] In the present application, the thickness h of the first functional layer 100 is set to 20 nm-60 nm to ensure the carrier transport performance and / or carrier injection performance of the first functional layer 100 , thereby ensuring normal display of the light-emitting device 10 .

[0083] It should be noted that carriers include electrons and holes.

[0084] In one embodiment, the first functional layer 100 is a first electronic functional layer, and the first electrode 600 is a first cathode. The first electronic functional layer is disposed on the first cathode. The first electronic functional layer includes at least one of a first electron transport layer and a first electron injection layer. The material of the first electronic functional layer is an electronic functional layer material. The electronic functional layer material is nanoparticles, the particle size of the nanoparticles is 5 nm to 20 nm, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, doped graphene, undoped graphene, C 60 , GaZnO and ZnMgLiO or a combination of several thereof.

[0085] In one embodiment, the first functional layer 100 is a first electronic functional layer, the first electrode 600 is a first cathode, the first electronic functional layer material is an electronic functional layer material, the electronic functional layer material is an inorganic metal compound, and the inorganic metal compound is selected from one or more combinations of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, CsCO3, ZrO, AlZnMgO, GaZnO and ZnMgLiO.

[0086] In this application, the first functional layer 100 is a first electronic functional layer, and the first electrode 600 is a first cathode. The first electronic functional layer is formed using an inorganic compound to prevent damage to the subsequent film layers. If an organic compound is used to form the first electronic functional layer, a photoresist layer is required when forming the subsequent film layers. When the photoresist layer is removed, a portion of the first electronic functional layer is also removed, causing damage to the first electronic functional layer and affecting the performance of the light-emitting device 10.

[0087] In another embodiment, the first functional layer 100 is a first hole functional layer, and the first electrode 600 is a first anode. The first hole functional layer is disposed on the first anode. The first hole functional layer includes at least one of a first hole transport layer and a first hole injection layer. The first hole functional layer material is a hole functional layer material. The hole functional layer material is a nanoparticle, and the particle size of the nanoparticle is 5 nm to 20 nm. The hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioctylfluorene-co-bis-N, N-phenyl-1,4-phenylenediamine) One or more combinations of the following: 1,2-diphenylamine (PFB), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazol)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).

[0088] In another embodiment, the first functional layer 100 is a first hole-functional layer, and the first electrode 600 is a first anode. The first hole-functional layer is disposed on the first anode. The first hole-functional layer includes at least one of a first hole transport layer and a first hole injection layer. The first hole-functional layer material is a hole-functional layer material. The hole-functional layer material is nanoparticles having a particle size of 5 to 20 nanometers. The hole-functional layer material is an inorganic metal compound selected from one or a combination of nickel oxide and copper oxide.

[0089] In the present application, the first functional layer 100 is a first hole-functional layer, and the first electrode 600 is a first anode. The first hole-functional layer is formed using an inorganic metal compound to prevent damage to the subsequent film layers. If an organic compound is used to form the first hole-functional layer, a photoresist layer is required when forming the subsequent film layers. When the photoresist layer is removed, a portion of the first hole-functional layer is also removed, causing damage to the first hole-functional layer and affecting the performance of the light-emitting device 10.

[0090] The patterned insulating layer 200 is disposed on the first functional layer 100. The patterned insulating layer 200 is divided into a plurality of patterned insulating layer segments and a patterned insulating layer connecting segment connecting the patterned insulating layer segments. In other words, the shape of the patterned insulating layer 200 is similar to that of an interdigitated structure. The patterned insulating layer 200 partially exposes the first functional layer 100. The material of the patterned insulating layer 200 includes one or a combination of aluminum oxide, silicon oxide, and silicon oxynitride.

[0091] It should be noted that the interdigitated finger structure refers to a palm structure in which multiple fingers are connected to a palm.

[0092] In one embodiment, the thickness D of the patterned insulating layer 200 is 30 nm-100 nm. Specifically, the thickness D of the patterned insulating layer 200 can be 30 nm, 34 nm, 44 nm, 58 nm, 70 nm, 80 nm, 94 nm, or 100 nm.

[0093] In this application, the thickness D of the patterned insulating layer 200 is set to 30 nm-100 nm to prevent the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10 and ensuring normal display of the light-emitting device 10.

[0094] The patterned second electrode 300 is disposed on the patterned insulating layer 200. The patterned second electrode 300 is divided into a plurality of patterned second electrode 300 segments and a patterned second electrode 300 connecting segment connected to the plurality of patterned second electrode 300 segments. That is, the planar shape of the patterned second electrode 300 is similar to the shape of an interdigitated structure, and the patterned second electrode 300 connecting segment is used to connect to an external circuit; each patterned second electrode 300 segment is correspondingly disposed to a patterned insulating layer 200 segment, and a patterned second electrode 300 connecting segment is correspondingly disposed to a patterned insulating layer 200 connecting segment. Each patterned second electrode 300 segment on the first functional layer 100 is disposed on the first functional layer 100. The orthographic projection is located within the orthographic projection of a patterned insulating layer 200 segment corresponding to a patterned second electrode 300 segment on the first functional layer 100, and the orthographic projection of a patterned second electrode 300 connecting segment on the first functional layer 100 is located within the orthographic projection of a patterned insulating layer 200 connecting segment corresponding to a patterned second electrode 300 connecting segment on the first functional layer 100, that is, the orthographic projection of the patterned second electrode 300 on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100.

[0095] It should be noted that corresponding arrangement means that one film structure is located below or above another film structure, such as the patterned second electrode 300 is located below the patterned insulating layer 200 , and the same is true below, which will not be repeated here.

[0096] In the present application, the orthographic projection of the patterned second electrode 300 on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100, so as to avoid the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10, and ensuring normal display of the light-emitting device 10.

[0097] In one embodiment, the thickness d of the patterned second electrode 300 is 50 nm-100 nm. Specifically, the thickness d of the patterned second electrode 300 can be 50 nm, 60 nm, 75 nm, 90 nm, or 100 nm.

[0098] In the present application, the thickness d of the patterned second electrode 300 is set to 50 nanometers to 100 nanometers. When the thickness d of the patterned second electrode 300 is within this range, the resistance of the patterned second electrode 300 is low, and the current is less obstructed, thereby improving the conductivity of the patterned second electrode 300. If the thickness d of the patterned second electrode 300 is set to less than 50 nanometers, the resistance of the patterned second electrode 300 is too high, thereby affecting the conductivity of the patterned second electrode 300 and causing the light-emitting device 10 to not display normally. If the thickness d of the patterned second electrode 300 is set to greater than 100 nanometers, the resistance of the patterned second electrode 300 is too low, causing damage to the light-emitting device 10.

[0099] In one embodiment, a distance between an edge of an orthographic projection of the patterned second electrode 300 on the first functional layer 100 and an edge of an orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers. Specifically, the distance between an edge of an orthographic projection of the patterned second electrode 300 on the first functional layer 100 and an edge of an orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100 may be greater than 20 nanometers, 30 nanometers, 60 nanometers, 80 nanometers, 90 nanometers, or 105 nanometers, etc.

[0100] In the present application, the distance from the edge of the positive projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the positive projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is set to be greater than 20 nanometers, further avoiding the subsequent patterned second functional layer 400 from contacting the first functional layer 100, further avoiding the leakage current problem of the light-emitting device 10, and further ensuring the normal display of the light-emitting device 10.

[0101] In one embodiment, the first electrode 600 is a first cathode, the first functional layer 100 is a first electronic functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second anode material is an anode material, and the anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au.

[0102] The conductivity of Ag is 6.3x10 7 S / m, the electrical conductivity of Al is 3.77x10 7 S / m, the conductivity of Au is 4.42x10 7 S / m, the conductivity of Ni is 1.4×10 7 S / m, if Ag, Al and Au are used to form the patterned second anode, the performance of the light emitting device 10 can be improved because the conductivity of Ag, Al and Au is greater than that of Ni and Cu.

[0103] In another embodiment, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second cathode material is a cathode material, and the cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag.

[0104] The patterned second functional layer 400 covers the patterned second electrode 300. The patterned second functional layer 400 is divided into a plurality of patterned second functional layer 400 segments and a patterned second functional layer 400 connecting segment connected to the plurality of patterned second functional layer 400 segments. The patterned second functional layer 400 connecting segment can be connected to an external circuit. The patterned second functional layer 400 segments are disposed on the patterned insulating layer 200 segments and the patterned second electrode 300 segments, and the patterned second functional layer 400 connecting segment is disposed on the patterned insulating layer 200 connecting segment and the patterned second electrode 300 connecting segment.

[0105] In one embodiment, the orthographic projection of the patterned second functional layer 400 segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 segment corresponding to the patterned second functional layer 400 segment on the first functional layer 100; the orthographic projection of the patterned second functional layer 400 connecting segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 connecting segment corresponding to the patterned second functional layer 400 connecting segment on the first functional layer 100; the orthographic projection of the patterned second electrode 300 segment on the patterned insulating layer 200 segment is located within the orthographic projection of the patterned second functional layer 400 segment corresponding to the patterned second electrode 300 segment on the patterned insulating layer 200 segment. the orthographic projection of the connecting segment of the patterned second electrode 300 on the connecting segment of the patterned insulating layer 200 is located within the orthographic projection of the connecting segment of the patterned second functional layer 400 corresponding to the connecting segment of the patterned second electrode 300 on the connecting segment of the patterned insulating layer 200; that is, the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, and the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is located within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200.

[0106] In the present application, the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, and the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is located within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200, further avoiding contact between the patterned second functional layer 400 and the first functional layer 100, further avoiding leakage current problems in the light-emitting device 10, and thus ensuring normal display of the light-emitting device 10.

[0107] In one embodiment, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 is greater than 5 nanometers, and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers. Specifically, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 can be greater than 5 nanometers, 10 nanometers, 15 nanometers, 50 nanometers or 100 nanometers, etc., and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 on the first functional layer 100 can be greater than 20 nanometers, 25 nanometers, 50 nanometers, 80 nanometers, 100 nanometers or 105 nanometers, etc.

[0108] In the present application, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 is set to be greater than 5 nanometers, and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers, so as to avoid contact between the patterned second functional layer 400 and the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10, and ensuring normal display of the light-emitting device 10.

[0109] In one embodiment, the first electrode 600 is a first cathode, the first functional layer 100 is a first electron functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second functional layer 400 is a patterned second hole functional layer, the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, and the patterned second functional layer 400 is a hole functional layer material. The hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS), cuprous thiocyanate and polyvinylcarbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioctylfluorene-co-bis-N, N-phenyl-1,4-phenylenediamine) (PFB), 4,4', 4''-Tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazol)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), doped graphene, undoped graphene and C 60 One or a combination of .

[0110] In another embodiment, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electron functional layer, the patterned second electronic functional layer includes at least one of a patterned second electron transport layer and a patterned second electron injection layer, and the material of the patterned second functional layer 400 is an electronic functional layer material.

[0111] The light-emitting layer 500 covers the patterned second functional layer 400 and the first functional layer 100. The light-emitting layer 500 may be a quantum dot light-emitting layer, including a red quantum dot light-emitting layer, a blue quantum dot light-emitting layer, and a green quantum dot light-emitting layer.

[0112] The material of light-emitting layer 500 is a quantum dot material known in the art for use in quantum dot light-emitting layers of optoelectronic devices. The material of light-emitting layer 500 includes at least one of single-structure quantum dots and core-shell quantum dots. Single-structure quantum dots include at least one of a II-VI compound, a III-V compound, and a I-III-VI compound. They form a core-shell structure in which a shell layer encloses a core layer. The band gap of the quantum dot shell is larger than the band gap of the quantum dot core layer. For example, II-VI group compounds include at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe; III-V group compounds may include at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP; I-III-VI group compounds include at least one of CuInS2, CuInSe2 and AgInS2. The core layer of the core-shell structured quantum dots includes at least one of the above-mentioned single-structure quantum dots, and the shell layer of the core-shell structured quantum dots includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS. As an example, the core-shell structured quantum dots include at least one of CdZnSe / CdZnS / ZnS, CdZnSe / ZnSe / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, and InP / ZnSeS / ZnS.

[0113] In the present application, the material of the light-emitting layer 500 is a quantum dot material with a core-shell structure, and the band gap of the shell layer is larger than the band gap of the core layer, so that the light-emitting layer 500 expands the range of the photon collection spectrum while avoiding the influence of the defects of the core layer on the luminescence of the light-emitting layer 500; because the material of the light-emitting layer 500 is a core-shell structure in which the shell layer encapsulates the shell layer, the coupling characteristics of the core layer can be avoided from being affected by adjusting the thickness of the shell layer, thereby improving the luminescence effect of the light-emitting device 10 and improving the stability of the display of the light-emitting device 10.

[0114] In the present application, the other film layers of the light-emitting device 10 are formed first, and the light-emitting layer 500 is formed last, so as to avoid damage to the light-emitting layer 500 by the other film layers during material deposition. At the same time, it is also avoided that the light-emitting layer 500 is wrapped in the middle of the other film layers of the light-emitting device 10, which will cause the other film layers to block the fluorescence of the light-emitting layer 500, thereby improving the display effect of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0115] The third functional layer 700 and the third electrode 800 are sequentially stacked on the light emitting layer 500 .

[0116] In the present application, a third functional layer 700 and a third electrode 800 are arranged on the light-emitting layer to increase the effective contact area between the electron functional layer or the hole functional layer and the light-emitting layer 500, that is, the effective contact area between the first functional layer 100 and the third functional layer 700 and the light-emitting layer 500 is increased, thereby improving the carrier transfer efficiency of the light-emitting device 10 and balancing the hole transfer efficiency and the electron transfer efficiency, which is beneficial to balancing the charge inside the light-emitting device 10, thereby improving the performance of the device.

[0117] In one embodiment, the first electrode 600 is a first cathode, the first functional layer 100 is a first electronic functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second functional layer 400 is a patterned second hole functional layer, the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, the patterned second functional layer 400 is a hole functional layer material, the third functional layer 700 is a third electronic functional layer, and the third electrode 800 is a third cathode. The third functional layer 700 is an electronic functional layer material selected from one or a combination of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, CsCO3, ZrO, AlZnMgO, GaZnO, and ZnMgLiO. The third electrode 800 is a cathode material selected from one or a combination of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag.

[0118] In another embodiment, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electron functional layer, the patterned second electron functional layer includes at least one of a patterned second electron transport layer and a patterned second electron injection layer, the patterned second functional layer 400 material is an electron functional layer material, the third functional layer 700 is a third hole functional layer, the third electrode 800 is a third anode, the third functional layer 700 material is a hole functional layer material, and the third anode material is an anode material.

[0119] In one embodiment, the light-emitting device further includes an encapsulation structure. The encapsulation structure is disposed on the third electrode 800. The encapsulation structure is formed by overlapping inorganic and organic layers. Providing the encapsulation structure on the third electrode 800 protects the light-emitting layer 500 from corrosion by water and oxygen, thereby improving the performance of the light-emitting device 10.

[0120] The present embodiment discloses a light-emitting device 10 in which a third functional layer 700 and a third electrode 800 are disposed on the light-emitting layer to increase the effective contact area between the electron functional layer or the hole functional layer and the light-emitting layer 500. This increases the effective contact area between the first functional layer 100 and the third functional layer 700 and the light-emitting layer 500. This improves the carrier transport efficiency in the light-emitting layer 500 region of the light-emitting device 10, thereby balancing the hole transport efficiency and electron transport efficiency in the light-emitting layer region. This facilitates charge balance within the light-emitting device 10, thereby improving device performance. The orthographic projection of the patterned second electrode 300 on the first functional layer 100 is positioned within the orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100. This prevents contact between the patterned second functional layer 400 and the first functional layer 100, thereby preventing leakage current in the light-emitting device 10 and improving the performance of the light-emitting device 10. The orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is arranged to be located within the orthographic projection of the patterned second functional layer 400 disposed corresponding to the patterned second electrode 300 on the patterned insulating layer 200, thereby preventing the patterned second functional layer 400 from contacting the first functional layer 100, thereby further preventing leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10. The orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is arranged to be located within the orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second functional layer 400 on the first functional layer 100, thereby further preventing contact between the patterned second functional layer 400 and the first functional layer 100, thereby further preventing leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0121] Example 1

[0122] The first electrode 600 is a first cathode, the first functional layer 100 is a first electron functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second functional layer 400 is a patterned second hole functional layer, the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, and the patterned second functional layer 400 is made of a hole functional layer material. The third functional layer 700 is a third electron functional layer, the third electrode 800 is a third cathode, and the third functional layer 700 is made of an electron functional layer material. The third electron functional layer includes at least one of a third electron transport layer and a third electron injection layer. The third cathode 800 is made of a cathode material. Preferably, the light-emitting layer 500 is a blue quantum dot light-emitting layer. Since the electrons in the blue quantum dot light-emitting device 10 are minority carriers, i.e., the number of electrons is less than the number of holes, the addition of the third electron functional layer and the third cathode improves electron injection, balances electrons and holes, and improves device efficiency.

[0123] In the present application, a third functional layer 700 is provided on the light-emitting layer as a third electronic functional layer, and a third electrode 800 is provided as a third cathode. This increases the effective contact area between the electronic functional layer and the light-emitting layer 500, that is, increases the effective contact area between the first electronic functional layer and the third electronic functional layer and the light-emitting layer 500. This improves the electron transfer efficiency in the light-emitting layer 500 region of the light-emitting device 10, balances the hole transfer efficiency and the electron transfer efficiency, and thus helps balance the charge within the light-emitting device 10, thereby improving the performance of the device. The orthographic projection of the patterned second anode on the first electronic functional layer is set to be located within the orthographic projection of the patterned insulating layer 200 on the first electronic functional layer, thereby avoiding contact between the patterned second hole functional layer and the first electronic functional layer, thereby avoiding leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10. The orthographic projection of the patterned second hole functional layer on the first electron functional layer is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second hole functional layer on the first electron functional layer, further avoiding contact between the patterned second hole functional layer and the first electron functional layer, thereby further avoiding the leakage current problem of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0124] Example 2

[0125] See also Figure 2 , Figure 2 This is a schematic diagram of the second structure of the light emitting device provided in the embodiment of the present application. It should be noted that Example 2 differs from Example 1 in that:

[0126] In the inverted light-emitting device, no third functional layer and no third electrode are provided, that is, no third functional layer and no third electrode are provided on the light-emitting layer 500 .

[0127] In the present application, a third functional layer and a third electrode are not provided in the inverted light-emitting device, that is, a third functional layer and a third electrode are not provided on the light-emitting layer 500, so as to avoid damage to the light-emitting layer 500 when the third functional layer and the third electrode are formed and the material is deposited. At the same time, it is avoided that the light-emitting layer 500 is wrapped in the middle of other film layers of the light-emitting device 10, which will cause the other film layers to block the fluorescence of the light-emitting layer 500, thereby improving the display effect of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0128] Example 3

[0129] Please continue reading Figure 1 It should be noted that Example 3 differs from Example 1 in the following ways:

[0130] The light-emitting device 10 is an upright light-emitting device. The third functional layer 700 is a third hole-functional layer, the third electrode 800 is a third anode, the first electrode 600 is a first anode, the first functional layer 100 is a first hole-functional layer, the patterned second electrode 300 is a patterned second cathode, and the patterned second functional layer 400 is a patterned second electron-functional layer. The patterned second electron-functional layer includes at least one of a patterned second electron transport layer and a patterned second electron injection layer. The patterned second electron-functional layer is made of an electron-functional layer material, the third functional layer 700 is made of a hole-functional layer material, and the third anode material is an anode material. Preferably, the light-emitting layer 500 is a red quantum dot light-emitting layer. Since holes in the red quantum dot light-emitting device 10 are minority carriers, i.e., the number of holes is less than the number of electrons, the addition of the third hole-functional layer and the third anode improves hole injection, balances the electron-hole relationship, and enhances device efficiency.

[0131] In the present application, a third functional layer 700 is provided on the light-emitting layer as a third hole-functional layer, and a third electrode 800 is provided as a third anode. This increases the effective contact area between the hole-functional layer and the light-emitting layer 500, that is, increases the effective contact area between the first hole-functional layer and the third hole-functional layer and the light-emitting layer 500. This improves the hole transport efficiency of the red quantum dot light-emitting device 10, balances the hole transport efficiency and the electron transport efficiency, and thus helps balance the charge within the light-emitting device 10, thereby improving the performance of the device. The orthographic projection of the patterned second cathode on the first hole-functional layer is set to be located within the orthographic projection of the patterned insulating layer 200 on the first hole-functional layer, avoiding contact between the patterned second electron-functional layer and the first hole-functional layer, thereby avoiding leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10. The orthographic projection of the patterned second electron functional layer on the first hole functional layer is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electron functional layer on the first hole functional layer, thereby further avoiding contact between the patterned second electron functional layer and the first hole functional layer, thereby further avoiding the leakage current problem of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0132] Example 4

[0133] Please continue reading Figure 2 It should be noted that Example 4 differs from Example 3 in the following ways:

[0134] No third functional layer and no third electrode are provided on the light emitting layer 500 .

[0135] In the present application, a third functional layer and a third electrode are not provided in the upright light-emitting device, that is, a third functional layer and a third electrode are not provided on the light-emitting layer 500, so as to avoid damage to the light-emitting layer 500 when the third functional layer and the third electrode are formed and the material is deposited. At the same time, it is avoided that the light-emitting layer 500 is wrapped in the middle of other film layers of the light-emitting device 10, which will cause the other film layers to block the fluorescence of the light-emitting layer 500, thereby improving the display effect of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0136] The present embodiment discloses a light-emitting device 10, which comprises a third functional layer 700 and a third electrode 800 disposed on the light-emitting layer. This increases the effective contact area between the electron functional layer and the hole functional layer and the light-emitting layer 500, that is, increases the effective contact area between the first functional layer 100 and the third functional layer 700 and the light-emitting layer 500. This improves the carrier transport efficiency of the light-emitting device 10, thereby balancing the hole transport efficiency and the electron transport efficiency in the light-emitting device 10, thereby facilitating charge balance within the light-emitting device 10 and improving device performance. The orthographic projection of the patterned second electrode 300 on the first functional layer 100 is arranged to be within the orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100. This prevents contact between the patterned second functional layer 400 and the first functional layer 100, thereby preventing leakage current in the light-emitting device 10 and improving the performance of the light-emitting device 10. The orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, and the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is set to be located within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200, thereby further avoiding contact between the patterned second functional layer 400 and the first functional layer 100, thereby further avoiding the leakage current problem of the light-emitting device 10, and improving the performance of the light-emitting device 10. No third functional layer and third electrode are provided in the light-emitting device 10, that is, no third functional layer and third electrode are provided on the light-emitting layer 500, so as to avoid damage to the light-emitting layer 500 when the third functional layer and the third electrode are formed and the material is deposited. At the same time, it is avoided that the light-emitting layer 500 is wrapped in the middle of other film layers of the light-emitting device 10, which will cause the other film layers to block the fluorescence of the light-emitting layer 500, thereby improving the display effect of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0137] The present application also provides a method for preparing a light-emitting device, comprising:

[0138] B11. Provide a first functional layer electrode.

[0139] B12. Form a first functional layer on the first electrode.

[0140] B13. Form a patterned insulating layer on the first functional layer.

[0141] B14. Form a patterned second electrode on the patterned insulating layer.

[0142] B15. Form a patterned second functional layer on the patterned second electrode.

[0143] B16. Form a light-emitting layer and a third functional layer on the first functional layer and the patterned second functional layer.

[0144] Among them, one of the first electrode and the second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the second functional layer is an electron functional layer, and the other is a hole functional layer. When the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electron functional layer, the third functional layer is an electron functional layer, and the electron functional layer is close to the cathode, and the hole functional layer is close to the anode.

[0145] In the present application, a third functional layer is provided on the light-emitting layer to improve the carrier transmission efficiency, thereby balancing the injection of electrons and holes in the light-emitting layer and improving the performance of the light-emitting device.

[0146] The following is a detailed description:

[0147] See also Figure 1 and Figure 3 , Figure 3 The present application provides a method for preparing a light-emitting device, including:

[0148] B11. Provide a first functional layer electrode.

[0149] The first electrode 600 may be a first cathode or a first anode.

[0150] The first electrode 600 may be a first cathode or a first anode. The thickness H of the first electrode 600 is greater than 100 nanometers. Specifically, the thickness H of the first electrode 600 may be 100 nanometers, 150 nanometers, 350 nanometers, 800 nanometers, or 900 nanometers.

[0151] In the present application, setting the thickness H of the first electrode 600 to be greater than 100 nanometers can improve the conductivity of the first electrode 600 .

[0152] In one embodiment, the first electrode 600 is a first cathode, and the first cathode material is a cathode material, which is selected from one or a combination of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag.

[0153] In another embodiment, the first electrode 600 is a first anode, the first anode material is an anode material, and the anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au.

[0154] B12. Form a first functional layer on the first electrode.

[0155] 30 mg / mL of first functional layer 100 nanoparticles were spin-coated on the first electrode 600 at a spin speed of 3000 rpm for 30 seconds. The first functional layer 100 was then heated at 80 degrees Celsius for 30 minutes.

[0156] The first functional layer 100 is disposed on the first electrode 600. The thickness h of the first functional layer 100 is 20 nm to 60 nm. Specifically, the thickness h of the first functional layer 100 can be 20 nm, 24 nm, 34 nm, 38 nm, 40 nm, 50 nm, 54 nm, or 60 nm.

[0157] In the present application, the thickness h of the first functional layer 100 is set to 20 nm-60 nm to ensure the carrier transport performance and / or carrier injection performance of the first functional layer 100 , thereby ensuring normal display of the light-emitting device 10 .

[0158] It should be noted that carriers include electrons and holes.

[0159] In one embodiment, the first functional layer 100 is a first electronic functional layer, and the first electrode 600 is a first cathode. The first electronic functional layer is disposed on the first cathode. The first electronic functional layer includes at least one of a first electron transport layer and a first electron injection layer. The material of the first electronic functional layer is an electronic functional layer material. The electronic functional layer material is nanoparticles, the particle size of the nanoparticles is 5 nm to 20 nm, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, doped graphene, undoped graphene, C 60 , GaZnO and ZnMgLiO or a combination of several thereof.

[0160] In one embodiment, the first functional layer 100 is a first electronic functional layer, the first electrode 600 is a first cathode, the first electronic functional layer material is an electronic functional layer material, the electronic functional layer material is an inorganic metal compound, and the inorganic metal compound is selected from one or more combinations of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, CsCO3, ZrO, AlZnMgO, GaZnO and ZnMgLiO.

[0161] In this application, the first functional layer 100 is a first electronic functional layer, and the first electrode 600 is a first cathode. The first electronic functional layer is formed using an inorganic compound to prevent damage during the subsequent formation of other film layers. If an organic compound is used to form the first electronic functional layer, a photoresist layer is required when forming subsequent film layers. When the photoresist layer is removed, a portion of the first electronic functional layer is also removed, causing damage to the first electronic functional layer and affecting the performance of the light-emitting device 10.

[0162] In another embodiment, the first functional layer 100 is a first hole functional layer, and the first electrode 600 is a first anode. The first hole functional layer is disposed on the first anode. The first hole functional layer includes at least one of a first hole transport layer and a first hole injection layer. The first hole functional layer material is a hole functional layer material. The hole functional layer material is a nanoparticle, and the particle size of the nanoparticle is 5 nm to 20 nm. The hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioctylfluorene-co-bis-N, N-phenyl-1,4-phenylenediamine) One or more combinations of the following: 1,2-diphenylamine (PFB), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazol)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB).

[0163] In another embodiment, the first functional layer 100 is a first hole-functional layer, and the first electrode 600 is a first anode. The first hole-functional layer is disposed on the first anode. The first hole-functional layer includes at least one of a first hole transport layer and a first hole injection layer. The first hole-functional layer material is a hole-functional layer material. The hole-functional layer material is nanoparticles having a particle size of 5 to 20 nanometers. The hole-functional layer material is an inorganic metal compound selected from one or a combination of nickel oxide and copper oxide.

[0164] In the present application, the first functional layer 100 is a first hole-functional layer, and the first electrode 600 is a first anode. The first hole-functional layer is formed using an inorganic metal compound to prevent damage to the subsequent film layers. If an organic compound is used to form the first hole-functional layer, a photoresist layer is required when forming the subsequent film layers. When the photoresist layer is removed, a portion of the first hole-functional layer is also removed, causing damage to the first hole-functional layer and affecting the performance of the light-emitting device 10.

[0165] B13. Form a patterned insulating layer on the first functional layer.

[0166] A first photoresist layer having a plurality of through holes is formed on the first functional layer, wherein the through holes penetrate the first photoresist layer to expose a portion of the first functional layer; then, a patterned insulating layer is formed in the through holes; and then, the first photoresist layer is removed.

[0167] One implementation method:

[0168] In a yellow light clean room, the material of the first photoresist layer is spin-coated on the first functional layer 100 at a spin-coating speed of 3000 rpm for 30 seconds, and then heat-treated at 110 degrees Celsius for 2 minutes.

[0169] Then, the material of the first photoresist layer is exposed under ultraviolet light using a first photolithography mask for 5 seconds.

[0170] The substrate was then developed in AZ726 developer (3:1 to water) for 25 seconds to form a first photoresist layer having a through hole. The first photoresist layer was AZ1512 photoresist. The through hole penetrated the first photoresist layer to expose a portion of the first functional layer 100. The through hole was correspondingly provided on the first functional layer 100 and was located above the first functional layer 100.

[0171] Then, at a vacuum degree of 3×10 -4 Under the condition of Pa, a patterned insulating layer material is evaporated in the through hole by electron beam at an evaporation rate of 1 Å / s, a evaporation time of 300 seconds, and an evaporation thickness of 30 nm to form a patterned insulating layer 200 .

[0172] Then, the first electrode 600 , the first functional layer 100 and the patterned insulating layer 200 are soaked in acetone, and the first photoresist layer is removed by ultrasonic treatment.

[0173] The patterned insulating layer 200 is divided into a plurality of patterned insulating layer segments and a patterned insulating layer connecting segment connecting the plurality of patterned insulating layer segments. Each adjacent patterned insulating layer segment is spaced apart, resulting in a shape similar to an interdigitated structure. The patterned insulating layer 200 exposes a portion of the first functional layer 100. The material of the patterned insulating layer 200 includes one or a combination of aluminum oxide, silicon oxide, and silicon oxynitride.

[0174] The thickness D of the patterned insulating layer 200 is 30 nm to 100 nm. Specifically, the thickness D of the patterned insulating layer 200 can be 30 nm, 34 nm, 44 nm, 58 nm, 70 nm, 80 nm, 94 nm, or 100 nm.

[0175] In this application, the thickness D of the patterned insulating layer 200 is set to 30 nm-100 nm to prevent the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10 and ensuring normal display of the light-emitting device 10.

[0176] B14. Form a patterned second electrode on the patterned insulating layer.

[0177] A second photoresist layer having a plurality of vias is formed on the first functional layer and the patterned insulating layer, wherein the vias correspond to the patterned insulating layer, and the vias penetrate the second photoresist layer to expose a portion of the patterned insulating layer; then, a patterned second electrode is formed in the via, wherein the orthographic projection of the patterned second electrode on the first functional layer is within the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

[0178] One implementation method:

[0179] After drying the first electrode 600, the first functional layer 100 and the patterned insulating layer 200, the second photoresist layer material is spin-coated on the first functional layer 100 and the patterned insulating layer 200 at a spin-coating speed of 3000 rpm for 30 seconds; then, heat-treated at 110 degrees Celsius for 2 minutes.

[0180] Then, the material of the second photoresist layer is exposed to light under an ultraviolet lamp using a second photolithography mask for 5 seconds.

[0181] The second photoresist layer is then developed in AZ726 developer (3:1 to water) for 25 seconds. This results in the second photoresist layer having a plurality of vias. The vias penetrate the second photoresist layer to expose a portion of the patterned insulating layer 200. The vias are located in the second photoresist layer. The second photoresist layer is AZ1512.

[0182] Then, at a vacuum degree of 3×10 -4Pa, a conductive material is evaporated in the via hole by electron beam at a rate of 1 angstrom / second, a deposition time of 900 seconds, and a deposition thickness of 90 nanometers to form a patterned second electrode 300. The patterned second electrode 300 is divided into a plurality of patterned second electrode 300 segments and a patterned second electrode 300 connecting segment connected to the plurality of patterned second electrode 300 segments, that is, the planar shape of the patterned second electrode 300 is similar to the shape of an interdigitated structure, and the patterned second electrode 300 connecting segment is used to connect to an external circuit; each patterned second electrode 300 segment is corresponding to a patterned insulating layer 200 segment, and a patterned second electrode 300 connecting segment is corresponding to a patterned insulating layer 200 connecting segment. Each patterned second electrode 300 segment is arranged on the first functional layer 100. The orthographic projection of the patterned insulating layer 200 segment corresponding to a patterned second electrode 300 segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 segment corresponding to a patterned second electrode 300 segment on the first functional layer 100, and the orthographic projection of a patterned second electrode 300 connecting segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 connecting segment corresponding to a patterned second electrode 300 connecting segment on the first functional layer 100, that is, the orthographic projection of the patterned second electrode 300 on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100.

[0183] In the present application, the orthographic projection of the patterned second electrode 300 on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100, so as to avoid the subsequent patterned second functional layer 400 from contacting the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10, and ensuring normal display of the light-emitting device 10.

[0184] In one embodiment, the thickness d of the patterned second electrode 300 is 50 nm-100 nm. Specifically, the thickness d of the patterned second electrode 300 can be 50 nm, 60 nm, 75 nm, 90 nm, or 100 nm.

[0185] In the present application, the thickness d of the patterned second electrode 300 is set to 50 nanometers to 100 nanometers. When the thickness d of the patterned second electrode 300 is within this range, the resistance of the patterned second electrode 300 is low, and the current is less obstructed, thereby improving the conductivity of the patterned second electrode 300. If the thickness d of the patterned second electrode 300 is set to less than 50 nanometers, the resistance of the patterned second electrode 300 is too high, thereby affecting the conductivity of the patterned second electrode 300 and causing the light-emitting device 10 to not display normally. If the thickness d of the patterned second electrode 300 is set to greater than 100 nanometers, the resistance of the patterned second electrode 300 is too low, causing damage to the light-emitting device 10.

[0186] In one embodiment, a distance between an edge of an orthographic projection of the patterned second electrode 300 on the first functional layer 100 and an edge of an orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers. Specifically, the distance between an edge of an orthographic projection of the patterned second electrode 300 on the first functional layer 100 and an edge of an orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100 may be greater than 20 nanometers, 30 nanometers, 60 nanometers, 80 nanometers, 90 nanometers, or 105 nanometers, etc.

[0187] In the present application, the distance from the edge of the positive projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the positive projection of the patterned insulating layer 200 corresponding to the patterned second electrode 300 on the first functional layer 100 is set to be greater than 20 nanometers, further avoiding the subsequent second functional layer 400 from contacting the first functional layer 100, further avoiding leakage current problems in the light-emitting device 10, and further ensuring normal display of the light-emitting device 10.

[0188] The patterned second electrode material includes a conductive material.

[0189] In one embodiment, the first electrode 600 is a first cathode, the first functional layer 100 is a first electronic functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second anode material is an anode material, and the anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au.

[0190] The conductivity of Ag is 6.3x10 7 S / m, the electrical conductivity of Al is 3.77x10 7 S / m, the conductivity of Au is 4.42x10 7 S / m, the conductivity of Ni is 1.4×10 7S / m, if Ag, Al and Au are used to form the patterned second anode, the performance of the light emitting device 10 can be improved because the conductivity of Ag, Al and Au is greater than that of Ni and Cu.

[0191] In another embodiment, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second cathode material is a cathode material, and the cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag.

[0192] B15. Form a patterned second functional layer on the patterned second electrode.

[0193] There are two methods for forming the patterned second functional layer on the patterned second electrode:

[0194] The first method is: first remove the second photoresist layer; then, oxidize the patterned second electrode to form a patterned second functional layer on the surface of the patterned second electrode, wherein the orthographic projection of the patterned second functional layer on the first functional layer is within the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer.

[0195] One implementation method:

[0196] The first electrode 600 , the first functional layer 100 , the patterned insulating layer 200 , the patterned second electrode 300 and the second photoresist layer are soaked in acetone, and the second photoresist layer is removed by ultrasonic treatment.

[0197] Then, the first electrode 600, the first functional layer 100, the patterned insulating layer 200, and the patterned second electrode 300 were placed on a hot plate for heat treatment. A patterned second functional layer was formed on the surface of the patterned second electrode 300. The heat treatment temperature was 300 degrees Celsius and the heat treatment time was 30 minutes. The orthographic projection of the patterned second functional layer 400 on the first functional layer 100 was located within the orthographic projection of the patterned insulating layer 200, which was arranged corresponding to the patterned second functional layer 400, on the first functional layer 100. The patterned second functional layer 400 was divided into a plurality of patterned second functional layer segments and a patterned second functional layer connecting segment connecting the plurality of patterned second functional layer segments. In other words, the planar shape of the patterned second functional layer was an interdigitated structure.

[0198] In one embodiment, the orthographic projection of the patterned second functional layer 400 segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 segment corresponding to the patterned second functional layer 400 segment on the first functional layer 100, and the orthographic projection of the patterned second functional layer 400 connecting segment on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 connecting segment corresponding to the patterned second functional layer 400 connecting segment on the first functional layer 100, that is, the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, and the patterned second functional layer 4 ... The orthographic projection of the second electrode 300 segment on the patterned insulating layer 200 segment is located within the orthographic projection of the patterned second functional layer 400 segment corresponding to the patterned second electrode 300 segment on the patterned insulating layer 200 segment, and the orthographic projection of the patterned second electrode 300 connecting segment on the patterned insulating layer 200 connecting segment is located within the orthographic projection of the patterned second functional layer 400 connecting segment corresponding to the patterned second electrode 300 connecting segment on the patterned insulating layer 200 connecting segment, that is, the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is located within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200.

[0199] In the present application, the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, and the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is located within the orthographic projection of the patterned second functional layer 400 corresponding to the patterned second electrode 300 on the patterned insulating layer 200, further avoiding contact between the patterned second functional layer 400 and the first functional layer 100, further avoiding leakage current problems in the light-emitting device 10, and thus ensuring normal display of the light-emitting device 10.

[0200] In one embodiment, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 is greater than 5 nanometers, and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers. Specifically, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 can be greater than 5 nanometers, 10 nanometers, 15 nanometers, 50 nanometers or 100 nanometers, etc., and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 on the first functional layer 100 can be greater than 20 nanometers, 25 nanometers, 50 nanometers, 80 nanometers, 100 nanometers or 105 nanometers, etc.

[0201] In the present application, the distance W from the edge of the orthographic projection of the patterned second functional layer 400 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100 is set to be greater than 5 nanometers, and the distance from the edge of the orthographic projection of the patterned second electrode 300 on the first functional layer 100 to the edge of the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode 300 on the first functional layer 100 is greater than 20 nanometers, so as to avoid contact between the patterned second functional layer 400 and the first functional layer 100, thereby avoiding leakage current problems in the light-emitting device 10, and ensuring normal display of the light-emitting device 10.

[0202] In one embodiment, the material of the patterned second electrode 300 is a conductive material, and the material of the patterned second functional layer 400 is an oxide of the conductive material.

[0203] In one embodiment, when the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer is a patterned second electronic functional layer, the patterned second cathode material is a cathode material, the cathode material is selected from one or a combination of Ti, Zn and Sn, and the patterned second functional layer material is an electronic functional layer material, the electronic functional layer material is selected from one or a combination of TiO2, ZnO and SnO2.

[0204] In another embodiment, when the patterned second electrode 300 is a patterned second anode, the patterned second functional layer 400 is a patterned second hole functional layer, and the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, the patterned second electrode 300 material is an anode material, the anode material is selected from one or a combination of Ni and Cu, and the patterned second hole functional layer material is a hole functional layer material, and the hole functional layer material is selected from one or a combination of nickel oxide and copper oxide.

[0205] In the present application, after the second photoresist layer is removed, the surface of the patterned second electrode 300 is oxidized to form a patterned second functional layer 400, and the orthographic projection of the patterned second functional layer 400 formed on the first functional layer 100 is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second functional layer 400 on the first functional layer 100, thereby avoiding contact between the patterned second functional layer 400 and the first functional layer 100, further avoiding leakage current problems in the light-emitting device 10, and thus ensuring normal display of the light-emitting device 10.

[0206] The second method is: first deposit a patterned second functional layer material on the patterned insulating layer and the patterned second electrode to form a patterned second functional layer, wherein the orthographic projection of the patterned second functional layer on the first functional layer is within the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer; then, remove the second photoresist layer.

[0207] One implementation method:

[0208] The patterned second functional layer is formed on the patterned second electrode 300 by an electrochemical deposition method or an evaporation method. The specific description is as follows:

[0209] The patterned second functional layer 400 is formed by an electrochemical deposition method: the first electrode 600, the first functional layer 100, the patterned insulating layer 200 and the patterned second electrode 300 are placed in a 0.1 mol / L aqueous solution of the second functional layer material, and a saturated calomel electrode is used as a reference electrode to apply a voltage of 1.1 volts to the patterned second electrode 300 for 120 seconds to form the patterned second functional layer 400; then, the second photoresist layer is removed.

[0210] The patterned second functional layer is formed by an evaporation method: a patterned second functional layer material is evaporated on the patterned second electrode 300 and the patterned insulating layer 200 to form a patterned second functional layer; then, the second photoresist layer is removed.

[0211] In one embodiment, when the patterned second electrode is a patterned second anode, the patterned second functional layer is a patterned second hole functional layer, the patterned second anode material is an anode material, the anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al and Au, and the patterned second hole functional layer material is a hole functional layer material, the hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinyl carbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) biphenyl One or more combinations of the following: 1, 2, 3, 4-diaminobenzene (TPD), 2, 4-diaminobenzene (DBP), 3, 5-diaminobenzene (DBP), 4, 4'-diaminobenzene (DBP), 2, 5-diaminobenzene (DBP), 2, 6-diaminobenzene (DBP), 3, 7-diaminobenzene (DBP), 4, 4'-diaminobenzene (DBP), 2, 8-diaminobenzene (DBP), 2, 9-diaminobenzene (DBP), 3, 5-diaminobenzene (DBP), 4, 4'-diaminobenzene (DBP), 2, 8-diaminobenzene (DBP), 2, 9 ...8-diaminobenzene (DBP), 2, 9-diaminobenzene (DBP

[0212] In another embodiment, when the patterned second electrode is a patterned second cathode, the patterned second functional layer is a patterned second electronic functional layer, the patterned second cathode material is a conductive material, and the conductive material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag, that is, the patterned second cathode is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag, and the patterned second electronic functional layer material is an electronic functional layer material, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, non-doped graphene, C 60 , GaZnO and ZnMgLiO or a combination of several thereof.

[0213] In the present application, after forming the patterned second electrode 300 in the via hole, the patterned second functional layer 400 is formed in the via hole by electrochemical deposition or evaporation, and finally, the second photoresist layer is removed. This can avoid the presence of numerous surface defects in the nickel oxide patterned second functional layer 400 or the copper oxide patterned second functional layer 400 prepared by heating and oxidizing the patterned second electrode 300 in air, and the difficulty in controlling the degree of oxidation, which is detrimental to carrier transport, thereby improving the performance of the light-emitting device 10.

[0214] In the present application, the orthographic projection of the patterned second electrode 300 on the patterned insulating layer 200 is arranged to be located within the orthographic projection of the patterned second functional layer 400 on the patterned insulating layer 200, which is arranged corresponding to the patterned second electrode 300. This prevents the patterned second functional layer 400 from contacting the first functional layer 100, thereby further preventing leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10. The orthographic projection of the patterned second functional layer 400 on the first functional layer 100 is arranged to be located within the orthographic projection of the patterned insulating layer 200 on the first functional layer 100, which is arranged corresponding to the patterned second functional layer 400. This further prevents contact between the patterned second functional layer 400 and the first functional layer 100, thereby further preventing leakage current problems in the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0215] B16. Form a light-emitting layer on the first functional layer and the patterned second functional layer.

[0216] 20 mg / mL of the material of the light-emitting layer 500 is spin-coated on the patterned second electrode 300 at a spin-coating speed of 2000 rpm for 30 seconds to form the light-emitting layer 500 . The light-emitting layer 500 is a blue light-emitting layer.

[0217] The material for light-emitting layer 500 is a quantum dot material known in the art for use in quantum dot light-emitting layers of optoelectronic devices. The material for light-emitting layer 500 includes at least one of single-structure quantum dots and core-shell quantum dots. Single-structure quantum dots include at least one of Group II-VI compounds, Group III-V compounds, and Group I-III-VI compounds. Core-shell quantum dots have a core-shell structure in which a shell encloses a core, and the band gap of the quantum dot shell is larger than the band gap of the quantum dot core. For example, II-VI group compounds include at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe; III-V group compounds may include at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP; I-III-VI group compounds include at least one of CuInS2, CuInSe2 and AgInS2. The core layer of the core-shell structured quantum dots includes at least one of the above-mentioned single-structure quantum dots, and the shell layer of the core-shell structured quantum dots includes at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS, and ZnS. As an example, the core-shell structured quantum dots include at least one of CdZnSe / CdZnS / ZnS, CdZnSe / ZnSe / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, InP / ZnSe / ZnS, and InP / ZnSeS / ZnS.

[0218] B17. Form a third functional layer on the light-emitting layer.

[0219] Specifically, 30 mg / L of the third functional layer 700 nanoparticles are spin-coated on the light-emitting layer 500 at a spin-coating speed of 3000 rpm for 30 seconds to form the third functional layer 700 .

[0220] B18. Form a third electrode on the third functional layer.

[0221] Then, at a vacuum degree of 3×10 -4 Under the condition of Pa, the third electrode material is deposited by electron beam evaporation at a rate of 1 angstrom / second, a deposition time of 200 seconds, and a deposition thickness of 20 nanometers to form the third electrode 800.

[0222] In one embodiment, the first electrode 600 is a first cathode, the first functional layer 100 is a first electronic functional layer, the patterned second electrode 300 is a patterned second anode, the patterned second functional layer 400 is a patterned second hole functional layer, the patterned second hole functional layer includes at least one of a patterned second hole transport layer and a patterned second hole injection layer, and the patterned second hole functional layer is made of a hole functional layer material. The third functional layer 700 is a third electronic functional layer, and the third electrode 800 is a third cathode. The third functional layer 700 is made of an electronic functional layer material selected from one or a combination of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, CsCO3, ZrO, AlZnMgO, GaZnO, and ZnMgLiO. The third electrode 800 is made of a cathode material selected from one or a combination of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag.

[0223] In another embodiment, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electron functional layer, the patterned second electron functional layer includes at least one of a patterned second electron transport layer and a patterned second electron injection layer, the material of the patterned second functional layer 400 is an electron functional layer material, the third functional layer 700 is a third hole functional layer, the third electrode 800 is a third anode, the material of the third hole functional layer is a hole functional layer material, and the material of the third anode is an anode material.

[0224] In one embodiment, after step B18, the method further includes:

[0225] An encapsulation structure is formed on the third electrode 800. The encapsulation structure is formed by alternately stacking organic layers and inorganic layers.

[0226] Then, the current, voltage and brightness data of the light emitting device 10 are tested to determine the electrical performance of the device;

[0227] Then, the working life data of the light emitting device 10 is tested, and the working life of the light emitting device 10 is determined by using a constant current drive of 2 mA.

[0228] Example 1

[0229] The first electrode 600 is a first cathode, the first functional layer 100 is a first electron functional layer, the patterned second electrode 300 is a patterned second anode, and the patterned second functional layer 400 is a patterned second hole functional layer, that is, the light-emitting device 10 is an inverted light-emitting device.

[0230] B11. Provide a first electrode.

[0231] B12. Form a first functional layer on the first electrode.

[0232] Specifically, ZnO nanoparticles with a concentration of 30 mg / mL and a particle size of 10 nm were spin-coated on the first cathode at a speed of 3000 rpm for 30 seconds; then, the first electron transport layer with a thickness h of 10 nm was formed by heating at 80 degrees Celsius for 30 minutes.

[0233] B13. Form a patterned insulating layer on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer.

[0234] Specifically, in a yellow light clean room, the material of the first photoresist layer is spin-coated on the first electron transport layer at a spin speed of 3000 rpm for 30 seconds, and then heat-treated at 110 degrees Celsius for 2 minutes; then, the first photoresist layer is exposed to ultraviolet light using a first photolithography mask for 5 seconds; then, it is placed in AZ726 developer (3:1 to water) for development for 25 seconds to form a first photoresist layer with a plurality of through holes. Then, in a vacuum of 3×10 -4 Pa, aluminum oxide is evaporated in the through hole by electron beam at a deposition rate of 1 angstrom / second, a deposition time of 300 seconds, and a deposition thickness of 30 nanometers to form a patterned insulating layer 200; then, the first cathode, the first electron transport layer, and the patterned insulating layer 200 are soaked in acetone, and the first photoresist layer is ultrasonically removed.

[0235] B14. Forming a patterned second electrode on the patterned insulating layer, wherein the orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

[0236] Specifically, after drying the first cathode, the first electron transport layer, and the patterned insulating layer 200, the material of the second photoresist layer is spin-coated on the first electron transport layer and the patterned insulating layer 200 at a spin speed of 3000 rpm and a spin coating time of 30 seconds; then, heat-treated at 110 degrees Celsius for 2 minutes; then, using a second photolithography mask, the material of the second photoresist layer is exposed under a UV lamp for 5 seconds; then, it is developed in AZ726 developer (3:1 to water) for 25 seconds, that is, the material of the second photoresist layer forms a second photoresist layer with a plurality of vias. The vias penetrate the second photoresist layer to expose a portion of the patterned insulating layer 200. The vias are correspondingly arranged in the second photoresist layer; then, under a vacuum degree of 3×10 -4Pa, a conductive material Ni is evaporated in the via hole by electron beam at a deposition rate of 1 Å / s, a deposition time of 900 seconds, and a deposition thickness of 90 nm to form a patterned second electrode 300, which is a patterned second anode.

[0237] B15. Forming a patterned second functional layer on the patterned second electrode.

[0238] Specifically, the first cathode, the first electron transport layer, the patterned insulating layer 200, the patterned anode and the second photoresist layer are soaked in acetone, and the second photoresist layer is removed ultrasonically; then, the first cathode, the first electron transport layer, the patterned insulating layer 200 and the patterned anode are placed on a hot stage for heat treatment, that is, the surface of the patterned anode is oxidized, and the conductive material Ni is oxidized to form the oxide of the conductive material nickel oxide. The oxide of the conductive material is the second hole transport layer of the patterned second hole functional layer. The heat treatment temperature is 300 degrees Celsius and the heat treatment time is 30 minutes.

[0239] B16. Disposing a light-emitting layer on the first functional layer and the patterned second functional layer.

[0240] Specifically, 20 mg / mL of ZnSeTe / ZnS was spin-coated on the patterned second anode at a spin-coating speed of 2000 rpm for 30 seconds to form a blue quantum dot light-emitting layer.

[0241] Then, an encapsulation structure was formed on the patterned second anode. The encapsulation structure is formed by overlapping inorganic and organic layers. Then, the current, voltage, and brightness data of the light-emitting device 10 were tested to determine the device's electrical performance. Finally, the operating life of the light-emitting device 10 was tested using a constant current of 2 mA to determine the operating life of the light-emitting device 10.

[0242] B17. Form a third functional layer on the light-emitting layer.

[0243] Specifically, 30 mg / L of TiO2 nanoparticles as an electronic functional layer material are spin-coated on the light-emitting layer 500 at a spin-coating speed of 3000 rpm for 30 seconds to form a third electron transport layer of the third electronic functional layer.

[0244] B18. Form a third electrode on the third functional layer.

[0245] Then, at a vacuum degree of 3×10 -4 Pa, cathode material Ag was electron beam evaporated at a rate of 1 angstrom / second, a deposition time of 200 seconds, and a deposition thickness of 20 nanometers to form a third cathode.

[0246] Then, the current, voltage and brightness data of the light emitting device 10 are tested to determine the electrical performance of the device;

[0247] Then, the working life data of the light emitting device 10 is tested, and the working life of the light emitting device 10 is determined by using a constant current drive of 2 mA.

[0248] In one embodiment, after step B18 and before testing the light emitting device 10, the method further includes:

[0249] A packaging structure is formed on the third cathode, wherein the packaging structure is formed by alternately stacking organic layers and inorganic layers.

[0250] In the present application, after the second photoresist layer is removed, the surface of the patterned second anode is oxidized to form a patterned second hole transport layer. That is, an oxidation treatment is used to form the patterned second hole transport layer, and the orthographic projection of the formed patterned second hole transport layer on the first electron transport layer is located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second hole transport layer on the first electron transport layer, thereby preventing the patterned second hole transport layer from contacting the first electron transport layer, preventing leakage current problems in the light-emitting device 10, and thus ensuring normal display of the light-emitting device 10. The orthographic projection of the patterned second hole transport layer on the first electron transport layer is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second hole transport layer on the first electron transport layer, further preventing contact between the patterned second functional layer 400 and the first electron transport layer, further preventing leakage current problems in the light-emitting device 10, and improving the performance of the light-emitting device 10.

[0251] Example 2

[0252] It should be noted that the difference between Example 2 and Example 1 is that: in step B15, the patterned second hole transport layer is formed on the patterned insulating layer 200 and the patterned second anode by the electrochemical deposition method in the second method, the patterned second anode material is an anode material, and the anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al and Au, and the patterned second hole transport layer material is a hole functional layer material, and the hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly (N, N'-bis (4- The present invention also provides one or more of the following materials: poly(butylphenyl)-N,N'-bis(phenyl)benzidine (Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazol)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB). Preferably, the patterned second anode material is Ag, the patterned second hole transport layer material is PEDOT:PSS, and after step B14, the second photoresist layer is not removed first, but is removed after step B15.

[0253] Specifically, after forming a patterned second anode using Ag, the first cathode, the first electron transport layer, the patterned insulating layer 200 and the patterned second anode are placed in a 0.1 mol / L sodium polystyrene sulfonate (PSSNa) and a 0.015 mol / L 3,4-ethylenedioxythiophene (EDOT) aqueous solution, and a saturated calomel electrode is used as a reference electrode. A voltage of 1.1 volts is applied to the patterned second anode 300 for 120 seconds to form a patterned second hole transport layer; then the second photoresist layer is removed.

[0254] In this application, after forming a patterned second anode in the via, a patterned second hole transport layer is formed in the via by electrochemical deposition, and finally, the second photoresist layer is removed. This can avoid the numerous surface defects of the nickel oxide patterned second hole transport layer or the copper oxide patterned second hole transport layer prepared by heating and oxidizing the second anode in air, and the difficulty in controlling the degree of oxidation, which is detrimental to hole transport, thereby improving the performance of the light-emitting device 10.

[0255] Example 3

[0256] Please continue reading Figure 2It should be noted that the difference between Example 3 and Example 1 is that after step B16, the third functional layer and the third electrode are not formed. The other steps are the same as those in Example 1 and will not be repeated here.

[0257] In the present application, a third functional layer and a third electrode are not provided on the light-emitting layer 500 to avoid damage to the light-emitting layer 500 by the third electron transport layer and the third anode during material deposition. At the same time, the light-emitting layer 500 is not wrapped in the middle of other film layers of the light-emitting device 10, which causes the other film layers to block the fluorescence of the light-emitting layer 500, thereby improving the display effect of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0258] Example 4

[0259] Please continue reading Figure 2 It should be noted that the difference between Example 4 and Example 2 is that after step B16, the third functional layer and the third electrode are not formed. The other steps are the same as those in Example 2 and will not be repeated here.

[0260] Example 5

[0261] It should be noted that the difference between Example 5 and Example 2 is that in step B15, the patterned second hole transport layer of the patterned second hole functional layer is formed by evaporation. The other steps are the same as in Example 2 and will not be repeated here.

[0262] Example 6

[0263] It should be noted that the difference between Example 6 and Example 1 is that the light-emitting device is an upright light-emitting device, that is, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electronic functional layer, the patterned second electrode 300 is a cathode material, the cathode material is a conductive material, and the conductive material is selected from one or a combination of Ti, Zn, and Sn, and the patterned second functional layer is an electronic functional layer material, and the electronic functional layer material is an oxide of a conductive material, and the oxide of the conductive material is selected from one or a combination of TiO2, ZnO, and SnO2. The other steps are the same as those in Example 1 and are not repeated here.

[0264] Example 7

[0265] It should be noted that the difference between Example 7 and Example 6 is that after step B16, the third functional layer and the third electrode are not formed. The other steps are the same as those in Example 6 and will not be repeated here.

[0266] Example 8

[0267] It should be noted that the difference between Example 8 and Example 2 is that the light-emitting device is a positive light-emitting device, that is, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electronic functional layer, the patterned second electrode 300 material is a cathode material, the conductive material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag, the patterned second functional layer material is an electronic functional layer material, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, non-doped graphene, C 60 , GaZnO and ZnMgLiO or a combination thereof. The other steps are the same as those in Example 2 and will not be repeated here.

[0268] Example 9

[0269] It should be noted that the difference between Example 9 and Example 5 is that the light-emitting device is a positive light-emitting device, that is, the first electrode 600 is a first anode, the first functional layer 100 is a first hole functional layer, the patterned second electrode 300 is a patterned second cathode, the patterned second functional layer 400 is a patterned second electronic functional layer, the patterned second electrode 300 material is a cathode material, the cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag, the patterned second functional layer material is an electronic functional layer material, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, non-doped graphene, C 60 , GaZnO and ZnMgLiO or a combination thereof. The other steps are the same as those in Example 2 and will not be repeated here.

[0270] Example 10

[0271] It should be noted that the difference between Example 10 and Example 9 is that after step B16, the third functional layer and the third electrode are not formed. The other steps are the same as those in Example 9 and will not be repeated here.

[0272] Comparative Example 1

[0273] See also Figure 4 , Figure 4Schematic diagram of the structure of a light-emitting device in the prior art. Comparative Example 1 differs from Example 1 in that, after the step of forming a patterned insulating layer using a first photoresist layer in Example 1, Comparative Example 1 directly forms a patterned second anode 301 while retaining the first photoresist layer. The edge of the orthographic projection of the patterned second anode 301 on the first electron transport layer 101 coincides with the edge of the orthographic projection of the patterned insulating layer 201 on the first electron transport layer 101. Subsequently, the patterned second anode 301 is placed on a hot plate for heat treatment, partially oxidizing the Ni to form a patterned second hole transport layer 401. The orthographic projection of the patterned second hole transport layer 401 on the first electron transport layer 101 is larger than the orthographic projection of the patterned insulating layer 201 on the first electron transport layer 101. The other steps are the same as those in Example 1 and are not repeated here.

[0274] Comparative Example 2

[0275] Comparative Example 2 differs from Example 1 in that the light-emitting device is a conventional light-emitting device, i.e., the light-emitting device includes an anode, an electron transport layer, a light-emitting layer, a hole transport layer, and a cathode stacked in sequence. The other steps are the same as those in Example 1 and are not further described here.

[0276] See also Figure 5-Figure 7 . Figure 5 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Example 1 and Comparative Example 1 of the present application. Figure 6 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Example 1 and Comparative Example 1 of the present application.

[0277] In the present application, a third electron transport layer and a third cathode are provided on the light-emitting layer 500, and the orthographic projection of the patterned second electrode 300 on the first electron transport layer is provided to be located within the orthographic projection of the patterned insulating layer 200 provided corresponding to the patterned second electrode 300 on the first electron transport layer. The brightness of the light-emitting device 10 can reach a maximum of more than 10 4 When the brightness of the light emitting device 10 is 10 4 When the external quantum efficiency can reach 9%, and the service life can be as long as 15 hours, the display effect of the light emitting device 10 is improved. In the prior art, the third electron transport layer and the third cathode are not provided, and the brightness of the light emitting device is less than 10 4 In the prior art, when the brightness of the light emitting device is 10 4, its external quantum efficiency can only reach a maximum of 4%. Therefore, a third electron transport layer and a third cathode are provided on the light-emitting layer 500, which increases the effective contact area between the first electron transport layer and the third electron transport layer and the light-emitting layer 500, increases the amount of electron injection, balances the hole and electron injection in the light-emitting layer 500, and improves the performance and life of the light-emitting device 10. In addition, because the orthographic projection of the patterned second electrode 300 on the first electron transport layer is set to be located within the orthographic projection of the patterned insulating layer 200 on the first electron transport layer, the contact probability between the patterned second hole transport layer and the first electron transport layer can be effectively reduced, avoiding the leakage current problem of the light-emitting device 10, thereby improving the performance of the light-emitting device 10.

[0278] See also Figure 7-Figure 9 . Figure 8 This is a voltage-brightness comparison diagram of the light-emitting devices provided in Example 2 and Comparative Example 1 of the present application. Figure 9 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Example 2 and Comparative Example 1 of the present application.

[0279] In the present application, a third electron transport layer and a third cathode are provided on the light-emitting layer 500, and the orthographic projection of the patterned second anode on the first electron transport layer is set to be located within the orthographic projection of the patterned insulating layer 200 on the first electron transport layer, and Ag is used to form the patterned second anode. The brightness of the light-emitting device 10 can reach a maximum of more than 10 4 ; The brightness of the light emitting device 10 is 10 4 When the external quantum efficiency is 18%, the display effect of the light emitting device 10 is improved. In the prior art, the third electron transport layer and the third cathode are not provided, and the brightness of the light emitting device is less than 10 4 , and the brightness of its light emitting device is 10 4, its external quantum efficiency can only reach 3% at most. Therefore, a third electron transport layer and a third cathode are provided on the light-emitting layer 500, which increases the effective contact area between the first electron transport layer and the third electron transport layer and the light-emitting layer 500, increases the amount of electron injection, balances the hole and electron injection, and improves the performance and life of the light-emitting device 10. In addition, because the orthographic projection of the patterned second anode on the first functional layer 100 is set to be located within the orthographic projection of the patterned insulating layer 200 on the first electron transport layer, the contact probability of the patterned second hole transport layer and the first electron transport layer can be effectively reduced, avoiding the leakage current problem of the light-emitting device 10, thereby improving the performance of the light-emitting device 10. At the same time, due to the good conductivity of Ag, the hole transport efficiency can be improved, thereby improving the performance of the light-emitting device 10. In addition, the patterned second hole transport layer can be prepared by electrochemical deposition. The material of the patterned second hole transport layer prepared by the electrochemical deposition method has a wider selection. For example, if the cost budget is not high, cheap materials can be selected, thereby reducing costs.

[0280] See also Figure 7 、 Figure 10 and Figure 11 . Figure 10 This is a schematic diagram of the leakage current data of the light emitting device provided in Example 3 of the present application. It should be noted that, Figure 10 Examples 3-1, 3-2, 3-3, and 3-4 indicate that the device was measured four times.

[0281] In the present application, the orthographic projection of the patterned second anode on the first electron transport layer is set to be located within the orthographic projection of the patterned insulating layer 200 on the first electron transport layer. The current of the light-emitting device 10 of the present application is stable, that is, the light-emitting device 10 provided by the present application does not have a leakage current problem. In the prior art, the edge of the patterned second electrode 301 coincides with the edge of the patterned insulating layer 201. When Ni is heated in air, Ni is oxidized to form nickel oxide. In this process, nickel oxide is easily formed on the edge of Ni and the underlying patterned insulating layer 201, causing the hole transport material nickel oxide to directly contact the electron transport material of the underlying layer, resulting in a leakage current problem in the light-emitting device. Therefore, the orthographic projection of the patterned second anode on the first electron transport layer is set to be located within the orthographic projection of the patterned insulating layer 200 corresponding to the patterned second anode on the first electron transport layer. On this basis, heating is performed to oxidize Ni to form a patterned second hole transport layer, effectively reducing the contact probability of the patterned second hole transport layer and the first electron transport layer, avoiding the leakage current problem of the light-emitting device 10, thereby improving the performance of the light-emitting device 10.

[0282] See also Figure 7 、 Figure 11 and Figure 12 . Figure 11 This is a voltage-brightness comparison diagram of the light-emitting device provided in Example 4 and Comparative Example 2 of the present application. Figure 12 This is a comparison chart of the brightness and external quantum efficiency of the light-emitting devices provided in Example 4 and Comparative Example 2 of the present application.

[0283] In the present application, the orthographic projection of the patterned second anode on the first electron transport layer is set to be located in the orthographic projection of the patterned insulating layer 200 on the first electron transport layer, and Ag is used to form the patterned second anode. The brightness of the light emitting device 10 can reach a maximum of more than 10 4 ; The brightness of the light emitting device 10 is 10 4 When the external quantum efficiency can reach 16%, the display effect of the light emitting device 10 is improved. 4 In the prior art, the edge of the patterned second electrode 301 coincides with the edge of the patterned insulating layer 201, and the brightness of the light-emitting device is 10 4 When the external quantum efficiency is at most 9%, the light-emitting device 10 of the present application can effectively reduce the contact probability between the patterned second hole transport layer and the first electron transport layer, avoiding the leakage current problem in the light-emitting device 10, thereby improving the performance of the light-emitting device 10. At the same time, due to the good conductivity of Ag, the hole transport efficiency can be improved, thereby improving the performance of the light-emitting device 10. In addition, the patterned second hole transport layer can be prepared by electrochemical deposition. The material of the patterned second hole transport layer prepared by electrochemical deposition has a wider selection. For example, if the cost budget is not high, cheaper materials can be selected, thereby reducing costs.

[0284] The present embodiment discloses a light-emitting device 10 and a method for manufacturing the same. A third functional layer 700 and a third electrode 800 are disposed on the light-emitting layer 500. This increases the effective contact area between the first functional layer 100 and the third functional layer 700 and the light-emitting layer 500, thereby improving the amount of carrier injection, balancing hole and electron injection, and enhancing the performance and lifespan of the light-emitting device 10. Furthermore, because the orthographic projection of the patterned second electrode 300 on the first functional layer 100 is positioned within the orthographic projection of the patterned insulating layer 200 disposed corresponding to the patterned second electrode 300 on the first functional layer 100, the probability of contact between the patterned second functional layer 400 and the first functional layer 100 is effectively reduced, thereby avoiding leakage current in the light-emitting device 10 and improving the performance of the light-emitting device 10. The other film layers of the light-emitting device 10 are formed first, and the light-emitting layer 500 is formed last, so as to avoid damage to the light-emitting layer 500 by the other film layers during material deposition. At the same time, it is also avoided that the light-emitting layer 500 is wrapped in the middle of the other film layers of the light-emitting device 10, which will cause the other film layers to block the fluorescence of the light-emitting layer 500, thereby improving the display effect of the light-emitting device 10 and improving the performance of the light-emitting device 10.

[0285] The above is a detailed introduction to a light-emitting device and a preparation method thereof provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A light emitting device, characterized in that: include: a first electrode; a first functional layer, the first functional layer being disposed on the first electrode; a patterned insulating layer, wherein the patterned insulating layer is disposed on the first functional layer; a patterned second electrode, wherein the patterned second electrode is disposed on the patterned insulating layer; a patterned second functional layer, wherein the patterned second functional layer covers the patterned second electrode; a light-emitting layer, the light-emitting layer covering the patterned second functional layer and the first functional layer; a third functional layer, the third functional layer being disposed on the light-emitting layer; as well as a third electrode, the third electrode being disposed on the third functional layer; Among them, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the patterned second functional layer is an electronic functional layer, and the other is a hole functional layer, when the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electronic functional layer, the third functional layer is an electronic functional layer, and the electronic functional layer is close to the cathode, and the hole functional layer is close to the anode.

2. The light emitting device according to claim 1, wherein The orthographic projection of the patterned second functional layer on the first functional layer is located within the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer; or, The orthographic projection of the patterned second electrode on the first functional layer is located within the orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

3. The light emitting device according to claim 2, characterized in that A distance between an edge of an orthographic projection of the patterned second functional layer on the first functional layer and an edge of an orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer is greater than 5 nanometers; or, A distance from an edge of an orthographic projection of the patterned second electrode on the first functional layer to an edge of an orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer is greater than 20 nanometers.

4. The light emitting device according to claim 1, wherein The thickness of the patterned insulating layer is 30 nanometers to 100 nanometers.

5. The light emitting device according to claim 1, wherein The anode material is selected from one or a combination of Pt, Ni, Cu, Ag, Al and Au; The cathode material is selected from one or a combination of ITO, FTO, Fe, Cu, Al, Sn, Zn and Ag; The hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioctylfluorene-co-bis-N, N-phenyl-1, 4-phenylenediamine) (PFB), 4,4',4''-tris (carbazol-9-yl) triphenylamine (TCTA), 4,4'-bis (9-carbazol) biphenyl (CBP), N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1, 1'-biphenyl-4, 4'-diamine (TPD) and N, N'-diphenyl-N, N'- (1-naphthyl) -1, 1'-biphenyl-4, 4'-diamine (NPB) or a combination thereof; The electronic functional layer material is selected from one or a combination of TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, undoped graphene, C60, GaZnO and ZnMgLiO; The light-emitting layer is a quantum dot light-emitting layer, the material of the quantum dot light-emitting layer is selected from at least one of single-structure quantum dots and core-shell structure quantum dots, the single-structure quantum dots are selected from at least one of II-VI compounds, III-V compounds and I-III-VI compounds, and the II-VI compounds are selected from at least one of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS, CdZnSeS, CdZnSeTe and CdZnSTe One, the III-V compound is selected from at least one of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP and InAlNP; the I-III-VI compound is selected from at least one of CuInS2, CuInSe2 and AgInS2, the core layer of the core-shell structured quantum dots is selected from any one of the above-mentioned single-structure quantum dots, and the shell layer of the core-shell structured quantum dots is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS.

6. A method for preparing a light-emitting device, characterized in that: include: providing a first electrode; forming a first functional layer on the first electrode; forming a patterned insulating layer on the first functional layer, wherein the patterned insulating layer at least partially exposes the first functional layer; forming a patterned second electrode on the patterned insulating layer; forming a patterned second functional layer on the patterned second electrode; forming a light-emitting layer on the first functional layer and the patterned second functional layer; forming a third functional layer on the light-emitting layer; forming a third electrode on the third functional layer; Among them, one of the first electrode and the patterned second electrode is an anode, and the other is a cathode, and the first electrode is the same as the third electrode; one of the first functional layer and the patterned second functional layer is an electronic functional layer, and the other is a hole functional layer, when the first functional layer is a hole functional layer, the third functional layer is a hole functional layer; when the first functional layer is an electronic functional layer, the third functional layer is an electronic functional layer, and the electronic functional layer is close to the cathode, and the hole functional layer is close to the anode.

7. The method for preparing a light-emitting device according to claim 6, wherein: The step of forming a patterned second electrode on the patterned insulating layer comprises: forming a second photoresist layer having a plurality of via holes on the first functional layer and the patterned insulating layer, wherein the via holes correspond to the patterned insulating layer and penetrate the second photoresist layer to expose a portion of the patterned insulating layer; A patterned second electrode is formed in the via hole, wherein an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer corresponding to the patterned second electrode on the first functional layer.

8. The method for preparing a light-emitting device according to claim 6, wherein: The step of forming a patterned insulating layer on the first functional layer comprises: forming a first photoresist layer having a plurality of through holes on the first functional layer, wherein the through holes penetrate the first photoresist layer to expose a portion of the first functional layer; forming a patterned insulating layer in the through hole; removing the first photoresist layer; The step of forming a patterned second electrode on the patterned insulating layer comprises: forming a second photoresist layer having a plurality of via holes on the first functional layer and the patterned insulating layer, wherein the via holes correspond to the patterned insulating layer and penetrate the second photoresist layer to expose a portion of the patterned insulating layer; A patterned second electrode is formed in the via hole, wherein an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer on the first functional layer.

9. The method for preparing a light-emitting device according to claim 8, wherein: The step of forming a patterned second functional layer on the patterned second electrode includes: removing the second photoresist layer; The patterned second electrode is oxidized to form a patterned second functional layer on the surface of the patterned second electrode, wherein the orthographic projection of the patterned second functional layer on the first functional layer is within the orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer.

10. The method for preparing a light-emitting device according to claim 9, wherein: The patterned second electrode material includes a conductive material, and the patterned second functional layer material includes an oxide of the conductive material; or, The second electrode is an anode, the patterned second functional layer is a hole functional layer, the anode material is selected from one or a combination of Ni and Cu, and the hole functional layer material is selected from one or a combination of nickel oxide and copper oxide; or The second electrode is a cathode, the second functional layer is an electronic functional layer, the cathode material is selected from one or a combination of Ti, Zn and Sn, and the electronic functional layer material is selected from one or a combination of TiO2, ZnO and SnO2.

11. The method for preparing a light-emitting device according to claim 8, wherein: The step of forming a patterned second functional layer on the patterned second electrode includes: Depositing a patterned second functional layer material on the patterned insulating layer and the patterned second electrode to form a patterned second functional layer, wherein an orthographic projection of the patterned second functional layer on the first functional layer is within an orthographic projection of the patterned insulating layer corresponding to the patterned second functional layer on the first functional layer; The second photoresist layer is removed.

12. The method for preparing a light-emitting device according to claim 11, wherein: The patterned second electrode is an anode, the patterned second functional layer is a hole functional layer, the anode material is selected from one or more combinations of Pt, Ni, Cu, Ag, Al and Au, and the hole functional layer material is selected from nickel oxide, copper oxide, poly (3,4-ethylenedioxythiophene): polystyrene sulfonate, cuprous thiocyanate, polyvinylcarbazole, poly (N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine) (Poly-TPD), poly (9,9-dioctylfluorene-co- -bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9-carbazol)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) and N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB); or, The patterned second electrode is a cathode, the second functional layer is an electronic functional layer, the cathode material is selected from one or more combinations of ITO, FTO, Fe, Cu, Al, Sn, Zn, and Ag, and the electronic functional layer material is selected from TiO2, ZnO, SnO, ZnMgO, AlZnO, ZnSnO, ZrO, AlZnMgO, Li-doped TiO2, Ru-doped TiO2, doped graphene, non-doped graphene, C 60 , GaZnO and ZnMgLiO or a combination of several thereof.

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