Laminated filter device

Abstract

The present application relates to a laminated filter device. The filter device includes a laminate including a plurality of dielectric layers laminated, and first to third resonators integrated with the laminate. The first to third resonators each include a first conductor portion, and a second conductor portion electrically connected to the first conductor portion and having an impedance smaller than that of the first conductor portion. The first conductor portion and the second conductor portion are disposed at different positions in a lamination direction.

Description

Technical Field

[0001] This invention relates to a stacked filter device having a resonator composed of a distributed constant circuit. Background Technology

[0002] As one of the electronic components used in communication devices, there is a bandpass filter that has multiple resonators. Each of the multiple resonators is, for example, composed of distributed constant lines. The distributed constant lines are configured in a manner that has a specified line length.

[0003] International Publication No. 2012 / 102385A1 discloses a three-stage bandpass filter using three transmission line resonators. The transmission line resonator in International Publication No. 2012 / 102385A1 is particularly a stepped impedance resonator (hereinafter also referred to as a SIR). International Publication No. 2012 / 102385A1 describes an SIR comprising a first transmission line, a second transmission line connected to one end of the first transmission line, and a third transmission line connected to the other end of the first transmission line.

[0004] Miniaturization is particularly important for bandpass filters used in small communication devices. However, in bandpass filters with resonators composed of distributed constant lines, the distributed constant lines constituting the resonators become an obstacle, making miniaturization of the bandpass filter difficult.

[0005] International Publication No. 2012 / 102385A1 discloses a technique that miniaturizes the SIR by loading a capacitor element into the first transmission line. However, in the SIR of International Publication No. 2012 / 102385A1, a second and a third transmission line are connected to both ends of the first transmission line. Therefore, the technique disclosed in International Publication No. 2012 / 102385A1 suffers from problems such as difficulty in reducing the area used to configure the SIR. Summary of the Invention

[0006] The purpose of this invention is to provide a miniaturizable stacked filter device.

[0007] The stacked filter device of the present invention includes a stack comprising multiple stacked dielectric layers and at least one resonator integrated with the stack. The at least one resonator includes a first conductor portion and a second conductor portion electrically connected to the first conductor portion and having an impedance lower than that of the first conductor portion. The first conductor portion and the second conductor portion are arranged at different positions in the stacking direction of the multiple dielectric layers.

[0008] In the stacked filter device of the present invention, the first conductor portion and the second conductor portion can each be a distributed constant line.

[0009] In addition, the stacked filter device of the present invention may also include at least one through hole connecting the first conductor portion and the second conductor portion.

[0010] Furthermore, the stacked filter device of the present invention may also include multiple terminals. In this case, the stack may also have a first surface and a second surface located at both ends in the stacking direction. Multiple terminals may also be disposed on the first surface. The second conductor portion may also be disposed between the first conductor portion and the first surface in the stacking direction.

[0011] In addition, in the stacked filter device of the present invention, the first conductor portion may also include multiple portions extending in multiple directions that are orthogonal to and different from the stacking direction.

[0012] Furthermore, in the stacked filter device of the present invention, the planar shape of the stacked body when viewed from a direction parallel to the stacking direction can also be an elongated shape in that direction. In this case, the shape of the second conductor portion can also be an elongated shape along the long side of the planar shape of the stacked body. Alternatively, the shape of the second conductor portion can also be an elongated shape in a direction intersecting the long side of the planar shape of the stacked body.

[0013] Furthermore, in the stacked filter device of the present invention, at least one resonator may also include a first resonator, a second resonator, and a third resonator disposed between the first and second resonators in the circuit structure. In this case, the stack may also have a first side and a second side located at both ends in a direction orthogonal to the stacking direction. The first resonator may also be disposed closer to the first side than the second side. The second resonator may also be disposed closer to the second side than the first side.

[0014] In addition, when viewed from a direction parallel to the stacking direction, at least a portion of the third resonator can also be positioned between the first and second resonators.

[0015] Alternatively, the first conductor portion of the first resonator and the first conductor portion of the second resonator may be positioned at the same location in the stacking direction. The first conductor portion of the third resonator may also be positioned differently in the stacking direction from the first conductor portions of the first and second resonators. In this case, when viewed from a direction parallel to the stacking direction, a portion of the first conductor portion of the first resonator and a portion of the first conductor portion of the second resonator may overlap with the first conductor portion of the third resonator.

[0016] Alternatively, the second conductor portion of the first resonator and the second conductor portion of the second resonator can be positioned at the same location in the stacking direction. The second conductor portion of the third resonator can also be positioned differently in the stacking direction from the respective second conductor portions of the first and second resonators. In this case, when viewed from a direction parallel to the stacking direction, a portion of the second conductor portion of the first resonator and a portion of the second conductor portion of the second resonator can overlap with the second conductor portion of the third resonator.

[0017] In addition, the first conductor portion of the third resonator can also have an asymmetrical shape.

[0018] Furthermore, the shape of the first conductor portion of the third resonator may differ from the shapes of the first conductor portions of the first resonator and the second resonator. Similarly, the shape of the second conductor portion of the third resonator may differ from the shapes of the second conductor portions of the first and second resonators.

[0019] In addition, the stacked filter device of the present invention may also include a first stub type resonator electrically connected to the first conductor portion of the first resonator, and a second stub type resonator electrically connected to the first conductor portion of the second resonator.

[0020] In the stacked filter device of the present invention, the first conductor portion of at least one resonator and the second conductor portion of at least one resonator are arranged at different positions in the stacking direction of the plurality of dielectric layers. Therefore, according to the present invention, a miniaturized stacked filter device can be realized.

[0021] Other objects, features and advantages of the present invention will become fully apparent from the following description. Attached Figure Description

[0022] Figure 1 This is a circuit diagram showing the circuit structure of the stacked filter device according to the first embodiment of the present invention.

[0023] Figure 2 This is a perspective view showing the appearance of the stacked filter device according to the first embodiment of the present invention.

[0024] Figures 3A-3C This is an explanatory diagram showing the pattern formation surface of the dielectric layers of the first to third layers in the stacked body of the stacked filter device according to the first embodiment of the present invention.

[0025] Figures 4A to 4C This is an explanatory diagram showing the pattern formation surface of the dielectric layers of the fourth to sixth layers in the stacked body of the stacked filter device according to the first embodiment of the present invention.

[0026] Figures 5A-5C This is an explanatory diagram showing the pattern formation surface of the dielectric layers of the seventh to ninth layers in the stacked body of the stacked filter device according to the first embodiment of the present invention.

[0027] Figure 6 This is a perspective view showing the interior of the stacked body of the stacked filter device according to the first embodiment of the present invention.

[0028] Figure 7 This is a perspective view showing a portion of the interior of the stacked body of the stacked filter device according to the first embodiment of the present invention.

[0029] Figure 8 This is a perspective view showing a portion of the interior of the stacked body of the stacked filter device according to the first embodiment of the present invention.

[0030] Figure 9 This is a characteristic diagram showing the pass-through attenuation characteristics of the stacked filter device according to the first embodiment of the present invention.

[0031] Figure 10 This is a circuit diagram illustrating the circuit structure of the stacked filter device according to the second embodiment of the present invention.

[0032] Figure 11 This is an explanatory diagram showing the pattern formation surface of the dielectric layer of the seventh layer in the stacked body of the stacked filter device according to the second embodiment of the present invention.

[0033] Figure 12 This is a perspective view showing the interior of the stacked body of the stacked filter device according to the second embodiment of the present invention.

[0034] Figure 13 This is a circuit diagram illustrating the circuit structure of a stacked filter device according to the third embodiment of the present invention. Detailed Implementation

[0035] [First Implementation Method]

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. First, referring to... Figure 1 The structure of the stacked filter device (hereinafter simply referred to as the filter device) 1 according to the first embodiment of the present invention will be described. Figure 1 This is a circuit diagram showing the circuit structure of filter device 1. Filter device 1 is configured to function as a bandpass filter that selectively allows signals of frequencies within a specified passband to pass through.

[0037] The filter device 1 of this embodiment includes at least one resonator. In particular, the filter device 1 includes a first resonator 10, a second resonator 20, and a third resonator 30 arranged in the circuit structure between the first resonator 10 and the second resonator 20 as at least one resonator. Furthermore, in this application, expressions such as "in the circuit structure" do not refer to the physical structural arrangement, but rather to the arrangement in the circuit diagram.

[0038] The first to third resonators 10, 20, and 30 are configured such that the first resonator 10 and the third resonator 30 are adjacent in circuit structure and electromagnetically coupled, and the second resonator 20 and the third resonator 30 are adjacent in circuit structure and electromagnetically coupled. Figure 1 In the diagram, the curve marked K13 represents the electric field coupling between the first resonator 10 and the third resonator 30, and the curve marked K23 represents the electric field coupling between the second resonator 20 and the third resonator 30.

[0039] Furthermore, the first resonator 10 is magnetically coupled to the second resonator 20, which is not adjacent in the circuit structure. This electromagnetic field coupling between two non-adjacent resonators in the circuit structure is called interleaved coupling. Figure 1 In the diagram, the curve marked K12 represents the magnetic field coupling between the first resonator 10 and the second resonator 20.

[0040] The first resonator 10 includes a first conductor portion 11 and a second conductor portion 12 with an impedance smaller than that of the first conductor portion 11. The first conductor portion 11 and the second conductor portion 12 are electrically connected to each other. The first conductor portion 11 is grounded. In addition, the first conductor portion 11 and the second conductor portion 12 are each a distributed constant line. In particular, the first conductor portion 11 is a distributed constant line with a small width, and the second conductor portion 12 is a distributed constant line with a larger width than that of the first conductor portion 11.

[0041] The first resonator 10 also includes a third conductor portion 13 electrically connecting the first conductor portion 11 and the second conductor portion 12. The third conductor portion 13 may also include a distribution constant line with a width smaller than the distribution constant line constituting the second conductor portion 12. The width of the distribution constant line of the third conductor portion 13 may be the same as or different from the width of the distribution constant line constituting the first conductor portion 11.

[0042] The structure of the second resonator 20 is basically the same as that of the first resonator 10. That is, the second resonator 20 includes a first conductor portion 21 and a second conductor portion 22 with a smaller impedance than the first conductor portion 21. The first conductor portion 21 and the second conductor portion 22 are electrically connected to each other. The first conductor portion 21 is grounded. In addition, the first conductor portion 21 and the second conductor portion 22 are each a distributed constant line. In particular, the first conductor portion 21 is a distributed constant line with a small width, and the second conductor portion 22 is a distributed constant line with a larger width than the first conductor portion 21.

[0043] The second resonator 20 also includes a third conductor portion 23 electrically connecting the first conductor portion 21 and the second conductor portion 22. The third conductor portion 23 may also include a distribution constant line with a width smaller than the distribution constant line constituting the second conductor portion 22. The width of the distribution constant line of the third conductor portion 23 may be the same as or different from the width of the distribution constant line constituting the first conductor portion 21.

[0044] The third resonator 30 includes a first conductor portion 31 and a second conductor portion 32 with an impedance smaller than that of the first conductor portion 31. The first conductor portion 31 and the second conductor portion 32 are electrically connected to each other. The first conductor portion 31 is grounded. Furthermore, both the first conductor portion 31 and the second conductor portion 32 are distributed constant lines. In this embodiment, in particular, the first conductor portion 31 is a distributed constant line with a small width, and the second conductor portion 32 is a distributed constant line with a larger width than that of the first conductor portion 31.

[0045] The first to third resonators, 10, 20, and 30, are all stepped impedance resonators composed of narrow and wide distributed constant lines. Furthermore, the first to third resonators, 10, 20, and 30, are all quarter-wavelength resonators with one end short-circuited and the other end open.

[0046] The impedances of the first conductor sections 11, 21, and 31 are, for example, in the range of 15 to 35 Ω. The impedances of the second conductor sections 12, 22, and 32 are, for example, in the range of 1 to 5 Ω. Here, in each of the first to third resonators 10, 20, and 30, the ratio of the impedance of the first conductor section to the impedance of the second conductor section is called the impedance ratio. In each of the first to third resonators 10, 20, and 30, the impedance ratio is less than 1. For example, the impedance ratio can be adjusted by adjusting the widths of the distribution constant lines constituting the first conductor section and the distribution constant lines constituting the second conductor section. As the impedance ratio decreases, the width of the distribution constant lines constituting the first section decreases relatively, and the width of the distribution constant lines constituting the second section increases relatively.

[0047] The filter device 1 also includes a first port 2, a second port 3, and conductor portions 4 and 5. The first to third resonators 10, 20, and 30 are arranged in the circuit structure between the first port 2 and the second port 3.

[0048] Conductor section 4 is electrically connected to first port 2 and first resonator 10. One end of conductor section 4 is connected to first port 2. The other end of conductor section 4 is connected to first resonator 10 between first conductor section 11 and third conductor section 13.

[0049] Conductor section 5 is electrically connected to the second port 3 and the second resonator 20. One end of conductor section 5 is connected to the second port 3. The other end of conductor section 5 is connected to the second resonator 20 between the first conductor section 21 and the third conductor section 23.

[0050] Next, refer to Figure 2 The other structures of filter device 1 will be described. Figure 2 This is a perspective view showing the appearance of filter device 1.

[0051] The filter device 1 also includes a stack 50. The stack 50 includes multiple stacked dielectric layers, multiple conductor layers formed on the multiple dielectric layers, and multiple vias. The first to third resonators 10, 20, and 30 are integrated with the stack 50. The first to third resonators 10, 20, and 30 are constructed using multiple conductor layers.

[0052] The laminate 50 has a first surface 50A and a second surface 50B located at both ends of the lamination direction T of the plurality of dielectric layers, and four side surfaces 50C to 50F connecting the first surface 50A and the second surface 50B. Side surfaces 50C and 50D face opposite sides to each other, and side surfaces 50E and 50F also face opposite sides to each other. Side surfaces 50C to 50F are perpendicular to the first surface 50A and the second surface 50B.

[0053] Here, as Figure 2 As shown, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. In this embodiment, the direction parallel to the stacking direction T is designated as the Z direction. Furthermore, the direction opposite to the X direction is designated as the -X direction, the direction opposite to the Y direction as the -Y direction, and the direction opposite to the Z direction as the -Z direction.

[0054] like Figure 2As shown, the first surface 50A is located at one end of the laminate 50 in the -Z direction. The first surface 50A is also the bottom surface of the laminate 50. The second surface 50B is located at one end of the laminate 50 in the Z direction. The second surface 50B is also the top surface of the laminate 50. The side surface 50C is located at one end of the laminate 50 in the -X direction. The side surface 50D is located at one end of the laminate 50 in the X direction. The side surface 50E is located at one end of the laminate 50 in the -Y direction. The side surface 50F is located at one end of the laminate 50 in the Y direction.

[0055] The planar shape of the laminate 50 when viewed from the Z direction, i.e., the shape of the first surface 50A or the second surface 50B, is an elongated shape in one direction. In this embodiment, in particular, the planar shape of the laminate 50 when viewed from the Z direction is a rectangular shape that is elongated in a direction parallel to the X direction.

[0056] The filter device 1 also includes a plurality of terminals 111, 112, 113, 114, 115, and 116 disposed on the first surface 50A of the laminate 50. Terminal 111 extends in the Y direction near side surface 50C. Terminal 112 extends in the Y direction near side surface 50D. Terminals 113 to 116 are disposed between terminals 111 and 112. Terminals 113 and 114 are arranged sequentially in the X direction near side surface 50E. Terminals 115 and 116 are arranged sequentially in the X direction near side surface 50F.

[0057] Terminal 111 corresponds to the first port 2, and terminal 112 corresponds to the second port 3. Therefore, the first and second ports 2 and 3 are disposed on the first surface 50A of the laminate 50. Terminals 113 to 116 are grounded. Hereinafter, terminal 111 will be referred to as the first terminal 111, terminal 112 will be referred to as the second terminal 112, and terminals 113 to 116 will be referred to as grounded terminals 113 to 116.

[0058] Next, refer to Figures 3A to 5C An example of the plurality of dielectric layers and the plurality of conductor layers constituting the laminate 50 will be described. In this example, the laminate 50 has nine dielectric layers stacked together. Hereinafter, these nine dielectric layers will be referred to as the first to the ninth dielectric layers from bottom to top. In addition, the first to the ninth dielectric layers will be represented by the symbols 51 to 59.

[0059] Figure 3A This indicates the patterned surface of the first dielectric layer 51. Terminals 111, 112, 113, 114, 115, and 116 are formed on the patterned surface of the dielectric layer 51. In addition, through holes 51T1, 51T2, 51T3, 51T4, 51T5, and 51T6, which are connected to the terminals 111, 112, 113, 114, 115, and 116, are formed on the dielectric layer 51.

[0060] Figure 3B This indicates the patterned surface of the second dielectric layer 52. A conductor layer 521 is formed on the patterned surface of the dielectric layer 52. Additionally, vias 52T1, 52T2, 52T3, 52T4, 52T5, and 52T6 are formed in the dielectric layer 52. Vias 51T1 and 51T2 formed in the dielectric layer 51 are connected to vias 52T1 and 52T2, respectively. Vias 51T3 to 51T6 and vias 52T3 to 52T6 formed in the dielectric layer 51 are connected to the conductor layer 521.

[0061] Figure 3C This indicates the patterned surface of the third dielectric layer 53. Conductor layers 531, 532, 533, and 534 are formed on the patterned surface of the dielectric layer 53. Conductor layer 532 is connected to conductor layer 531. Conductor layer 534 is connected to conductor layer 533. Figure 3C In the diagram, dashed lines represent the boundaries of conductor layers 531 and 532, and the boundaries of conductor layers 533 and 534, respectively.

[0062] Additionally, vias 53T1, 53T2, 53T3, 53T4, 53T5, and 53T6 are formed in the dielectric layer 53. Vias 52T1 and 53T1 formed in the dielectric layer 52 are connected to the conductor layer 532. Vias 52T2 and 53T2 formed in the dielectric layer 52 are connected to the conductor layer 534. Vias 52T3 to 52T6 formed in the dielectric layer 52 are connected to vias 53T3 to 53T6, respectively.

[0063] Figure 4A This indicates the patterned surface of the fourth dielectric layer 54. A conductor layer 541 is formed on the patterned surface of the dielectric layer 54. Additionally, vias 54T1, 54T2, 54T3, 54T4, 54T5, 54T6, and 54T7 are formed in the dielectric layer 54. Vias 53T1 to 53T6 formed in the dielectric layer 53 are connected to vias 54T1 to 54T6, respectively. Via 54T7 is connected to the conductor layer 541.

[0064] Figure 4B This indicates the patterned surface of the fifth dielectric layer 55. A conductor layer 551 is formed on the patterned surface of the dielectric layer 55. Additionally, vias 55T1, 55T2, 55T7, and 55T8 are formed in the dielectric layer 55. The vias 54T1, 54T2, and 54T7 formed in the dielectric layer 54 are connected to the vias 55T1, 55T2, and 55T7, respectively. The vias 54T3 to 54T6 and via 55T8 formed in the dielectric layer 54 are connected to the conductor layer 551.

[0065] Figure 4CThis indicates the patterned surface of the sixth dielectric layer 56. Through-holes 56T1, 56T2, 56T7, and 56T8 are formed in the dielectric layer 56. Through-holes 55T1, 55T2, 55T7, and 55T8 formed in the dielectric layer 55 are connected to through-holes 56T1, 56T2, 56T7, and 56T8, respectively.

[0066] Figure 5A This represents the patterned surface of the seventh dielectric layer 57. Conductor layers 571 and 572 are formed on the patterned surface of the dielectric layer 57. Conductor layers 571 and 572 each have a first end and a second end located on opposite sides. The first end of conductor layer 571 and the first end of conductor layer 572 are connected to each other. Figure 5A In the diagram, the boundary between conductor layer 571 and conductor layer 572 is indicated by dashed lines. A via 56T1 formed in dielectric layer 56 connects to a portion near the second end of conductor layer 571. A via 56T2 formed in dielectric layer 56 connects to a portion near the second end of conductor layer 572.

[0067] Additionally, vias 57T7 and 57T8 are formed in dielectric layer 57. Via 56T7 formed in dielectric layer 56 is connected to via 57T7. Via 56T8 and via 57T8 formed in dielectric layer 56 are connected to the vicinity of the first end of conductor layer 571 and the vicinity of the first end of conductor layer 572.

[0068] Figure 5B This indicates the patterned surface of the eighth dielectric layer 58. A conductor layer 581 is formed on the patterned surface of the dielectric layer 58. The conductor layer 581 has a first end and a second end located on opposite sides. A through-hole 57T7 formed in the dielectric layer 57 is connected to a portion near the first end of the conductor layer 581.

[0069] Additionally, a via 58T8 is formed in the dielectric layer 58. The vias 57T8 and 58T8 formed in the dielectric layer 57 are connected to the portion near the second end of the conductor layer 581.

[0070] Figure 5C This indicates the patterned surface of the ninth dielectric layer 59. A conductor layer 591 is formed on the patterned surface of the dielectric layer 59. A via 58T8 formed in the dielectric layer 58 is connected to the conductor layer 591.

[0071] Figure 2 The stack 50 shown is constructed by stacking the first to ninth dielectric layers 51 to 59 in such a way that the patterned surface of the first dielectric layer 51 becomes the first surface 50A of the stack 50, and the surface opposite to the patterned surface of the ninth dielectric layer 59 becomes the second surface 50B of the stack 50.

[0072] Figure 6 This refers to the interior of the laminate 50, which is formed by stacking the first to ninth dielectric layers 51 to 59. For example... Figure 6 As shown, inside the laminate 50, there are laminated... Figures 3A to 5C The diagram shows multiple conductor layers and multiple vias.

[0073] The following is about Figure 1 The circuit components of the filter device 1 shown are... Figures 3A to 5C The correspondence of the internal components of the stacked body 50 shown will be explained. First, the first resonator 10 will be explained. The first conductor portion 11 is composed of conductor layer 571. The second conductor portion 12 is composed of conductor layer 531. The third conductor portion 13 is composed of conductor layer 532.

[0074] Conductor layer 532 (third conductor portion 13) and through holes 53T1, 54T1, 55T1, and 56T1 connect conductor layer 571 constituting first conductor portion 11 and conductor layer 531 constituting second conductor portion 12. Furthermore, conductor layer 571 constituting first conductor portion 11 is connected to grounding terminals 113-116 via through holes 51T3-51T6, conductor layer 521, through holes 52T3-52T6, 53T3-53T6, through holes 54T3-54T6, conductor layer 551, and through holes 55T8 and 56T8.

[0075] Next, the second resonator 20 will be described. The first conductor portion 21 is composed of conductor layer 572. The second conductor portion 22 is composed of conductor layer 533. The third conductor portion 23 is composed of conductor layer 534.

[0076] Conductor layer 534 (third conductor portion 23) and through holes 53T2, 54T2, 55T2, and 56T2 connect conductor layer 572 constituting first conductor portion 21 and conductor layer 533 constituting second conductor portion 22. Furthermore, conductor layer 572 constituting first conductor portion 21 is connected to grounding terminals 113-116 via through holes 51T3-51T6, conductor layer 521, through holes 52T3-52T6, 53T3-53T6, through holes 54T3-54T6, conductor layer 551, and through holes 55T8 and 56T8.

[0077] Next, the third resonator 30 will be described. The first conductor portion 31 is composed of a conductor layer 581. The second conductor portion 32 is composed of a conductor layer 541.

[0078] The conductor layer 581 constituting the first conductor portion 31 is connected to the grounding terminals 113-116 via through holes 51T3-51T6, conductor layer 521, through holes 52T3-52T6, 53T3-53T6, through holes 54T3-54T6, conductor layer 551, and through holes 55T8, 56T8, and 57T8.

[0079] Next, conductor portions 4 and 5 will be described. Conductor portion 4 is composed of through holes 51T1 and 52T1. Through hole 51T1 is connected to the first terminal 111. Through hole 52T1 is connected to the conductor layer 532 constituting the third conductor portion 13, and is connected to the conductor layer 571 constituting the first conductor portion 11 via through holes 53T1, 54T1, 55T1, and 56T1.

[0080] The conductor portion 5 is formed by through holes 51T2 and 52T2. Through hole 51T2 is connected to the second terminal 112. Through hole 52T2 is connected to the conductor layer 534 constituting the third conductor portion 23, and is connected to the conductor layer 572 constituting the first conductor portion 21 via through holes 53T2, 54T2, 55T2, and 56T2.

[0081] Next, refer to Figures 2-8 The structural features of the filter device 1 in this embodiment will be described. Figure 7 and Figure 8 This is a three-dimensional view showing a portion of the interior of the laminate 50. Figure 7 The text primarily represents the multiple conductor layers and vias that constitute the first and second resonators 10 and 20. Figure 8 The main components are the multiple conductor layers and multiple through holes that make up the third resonator 30.

[0082] The first resonator 10 is disposed in the region on the -X direction side within the laminate 50. That is, the first resonator 10 is disposed at a position closer to the side surface 50C than the side surface 50D. Figure 7 As shown, the first conductor portion 11 (conductor layer 571) and the second conductor portion 12 (conductor layer 531) of the first resonator 10 are arranged at different positions in the stacking direction T. The second conductor portion 12 is disposed between the first surface 50A, on which a plurality of terminals 111 to 116 are disposed, and the first conductor portion 11.

[0083] The first conductor portion 11 (conductor layer 571) includes multiple portions extending in multiple directions orthogonal to the stacking direction T. In this embodiment, in particular, the first conductor portion 11 (conductor layer 571) includes four portions extending in a direction parallel to the X direction and three portions extending in a direction parallel to the Y direction.

[0084] The second conductor portion 12 (conductor layer 531) has an elongated shape in a direction intersecting the long side direction of the laminate 50. In this embodiment, in particular, the second conductor portion 12 (conductor layer 531) has a rectangular shape that elongates in a direction parallel to the Y direction.

[0085] The second resonator 20 is disposed in the region on the X-direction side within the laminate 50. That is, the second resonator 20 is disposed closer to the side surface 50D than the side surface 50C. Figure 7 As shown, the first conductor portion 21 (conductor layer 572) and the second conductor portion 22 (conductor layer 533) of the second resonator 20 are arranged at different positions in the stacking direction T. The second conductor portion 22 is disposed between the first surface 50A, on which a plurality of terminals 111 to 116 are disposed, and the first conductor portion 21.

[0086] The first conductor portion 21 (conductor layer 572) includes multiple portions extending in multiple directions orthogonal to the stacking direction T. In this embodiment, in particular, the first conductor portion 21 (conductor layer 572) includes four portions extending in a direction parallel to the X direction and three portions extending in a direction parallel to the Y direction.

[0087] The second conductor portion 22 (conductor layer 533) is elongated in a direction intersecting the long side direction of the laminate 50. In this embodiment, in particular, the second conductor portion 22 (conductor layer 533) is a rectangular shape that elongates in a direction parallel to the Y direction.

[0088] When viewed from the Z direction, at least a portion of the third resonator 30 is disposed between the first resonator 10 and the second resonator 20. In this embodiment, in particular, a portion of the third resonator 30 is disposed between the first resonator 10 and the second resonator 20.

[0089] like Figure 8 As shown, the first conductor portion 31 (conductor layer 581) and the second conductor portion 32 (conductor layer 541) of the third resonator 30 are arranged at different positions in the stacking direction T. The second conductor portion 32 is disposed between the first surface 50A, on which a plurality of terminals 111 to 116 are disposed, and the first conductor portion 31.

[0090] The first conductor portion 31 (conductor layer 581) includes multiple portions extending in multiple directions orthogonal to the stacking direction T. In this embodiment, in particular, the first conductor portion 31 (conductor layer 581) includes three portions extending in a direction parallel to the X direction and four portions extending in a direction parallel to the Y direction.

[0091] The first conductor portion 31 (conductor layer 581) has an asymmetrical shape with respect to any XZ plane intersecting the first conductor portion 31, and also has an asymmetrical shape with respect to any YZ plane intersecting the first conductor portion 31. Hereinafter, any XZ plane intersecting the first conductor portion 31 will be referred to as a first imaginary plane, and any YZ plane intersecting the first conductor portion 31 will be referred to as a second imaginary plane. The first imaginary plane may also intersect the center of the laminate 50 in a direction parallel to the Y direction. The second imaginary plane may also intersect the center of the laminate 50 in a direction parallel to the X direction.

[0092] The second conductor portion 32 (conductor layer 541) has a shape that extends along the long side of the laminate 50. In this embodiment, in particular, the second conductor portion 32 (conductor layer 541) has a rectangular shape that extends in a direction parallel to the X direction.

[0093] like Figure 5A and Figure 6 As shown, the first conductor portion 11 (conductor layer 571) of the first resonator 10 and the first conductor portion 21 (conductor layer 572) of the second resonator 20 are arranged at the same position in the stacking direction T. Figure 5A , Figure 5B and Figure 6 As shown, the first conductor portion 31 (conductor layer 581) of the third resonator 30 is positioned differently from the first conductor portions 11 and 21 in the stacking direction T. Furthermore, when viewed from the Z direction, a portion of the first conductor portion 11 and a portion of the first conductor portion 21 overlap with the first conductor portion 31. Additionally, the shape of the first conductor portion 31 differs from the shapes of the first conductor portion 11 and the first conductor portion 21.

[0094] In addition, such as Figure 3C and Figure 6 As shown, the second conductor portion 12 (conductor layer 531) of the first resonator 10 and the second conductor portion 22 (conductor layer 533) of the second resonator 20 are positioned at the same location in the stacking direction T. Figure 3C , Figure 4A and Figure 6 As shown, the second conductor portion 32 (conductor layer 541) of the third resonator 30 is positioned differently from the second conductor portions 12 and 22 in the stacking direction T. Furthermore, when viewed from the Z direction, a portion of the second conductor portion 12 and a portion of the second conductor portion 22 overlap with the second conductor portion 32. Additionally, the shape of the second conductor portion 32 differs from the shapes of the second conductor portion 12 and the second conductor portion 22.

[0095] As explained above, in this embodiment, the first conductor portion 11 and the second conductor portion 12 of the first resonator 10 are arranged at different positions in the stacking direction T. Therefore, according to this embodiment, the first conductor portion 11 and the second conductor portion 12 can be arranged in an overlapping manner. Thus, according to this embodiment, compared to the case where the first conductor portion 11 and the second conductor portion 12 are formed on the same dielectric layer and arranged at the same position in the stacking direction T, the area used to arrange the first resonator 10 can be substantially reduced.

[0096] The above description of the first resonator 10 also applies to the second and third resonators 20 and 30. Therefore, according to this embodiment, the filter device 1 can be miniaturized.

[0097] Furthermore, in this embodiment, when viewed from the Z direction, a portion of the first conductor portion 11 of the first resonator 10 and a portion of the first conductor portion 21 of the second resonator 20 overlap with the first conductor portion 31 of the third resonator 30. Similarly, when viewed from the Z direction, a portion of the second conductor portion 12 of the first resonator 10 and a portion of the second conductor portion 22 of the second resonator 20 overlap with the second conductor portion 32 of the third resonator 30. Therefore, according to this embodiment, the filter device 1 can also be miniaturized.

[0098] Furthermore, in this embodiment, each of the first conductor portions 11, 21, and 31 comprises multiple portions extending in multiple different directions. Therefore, according to this embodiment, compared to the case where each of the first conductor portions 11, 21, and 31 extends in only one direction, the area used to assemble each of the first conductor portions 11, 21, and 31 can be substantially reduced.

[0099] Furthermore, in this embodiment, the first conductor portion 31 has the asymmetrical shape described above. Therefore, according to this embodiment, the interaction occurring between the first conductor portion 11 and the first conductor portion 31 can be made different from the interaction occurring between the first conductor portion 21 and the first conductor portion 31. Thus, for example, parasitic phenomena occurring in frequency regions higher than the passband can be suppressed.

[0100] In this embodiment, conductor layer 591 is connected to grounding terminals 113-116 via through-holes 51T3-51T6, conductor layer 521, through-holes 52T3-52T6, 53T3-53T6, through-holes 54T3-54T6, conductor layer 551, and through-holes 55T8, 56T8, 57T8, and 58T8. The first to third resonators 10, 20, and 30 are disposed between conductor layer 521 and conductor layer 591. When viewed from the Z direction, conductor layers 521 and 591 overlap with the first to third resonators 10, 20, and 30 respectively. Conductor layers 521 and 591 function as shielding elements.

[0101] Next, an example of the characteristics of the filter device 1 of this embodiment will be shown. Figure 9 This is a characteristic diagram illustrating an example of the pass-through attenuation characteristics of filter device 1. Figure 9 In the diagram, the horizontal axis represents frequency, and the vertical axis represents attenuation. For example... Figure 9 As shown, the filter device 1 in this embodiment functions as a bandpass filter. Figure 9 The example shown is a filter device 1 designed with a passband of 2.3 to 3.3 GHz.

[0102] [Second Implementation]

[0103] Next, refer to Figures 10-12 The second embodiment of the present invention will now be described. Figure 10 This is a circuit diagram showing the circuit structure of the cascaded filter device of this embodiment. Figure 11 This is an explanatory diagram showing the pattern formation surface of the dielectric layer, the seventh layer in this embodiment. Figure 12 This is a perspective view showing the interior of the stacked body of the stacked filter device of this embodiment.

[0104] The filter device 1 of this embodiment differs from the first embodiment in the following aspects. The filter device 1 of this embodiment includes a first stub type resonator 91 electrically connected to the first conductor portion 11 of the first resonator 10, and a second stub type resonator 92 electrically connected to the first conductor portion 21 of the second resonator 20. The first and second stub type resonators 91 and 92 are each distributed constant lines.

[0105] The first stubular resonator 91 is connected midway to the first conductor portion 11. Figure 10 In the circuit diagram, the portion of the first conductor portion 11 located between the connection point with the first stub resonator 91 and the second conductor portion 12 is represented by the symbol 11A, and the portion located between the connection point with the first stub resonator 91 and the ground wire is represented by the symbol 11B.

[0106] The second stub resonator 92 is connected midway to the first conductor section 21. Figure 10 In the circuit diagram, the portion of the first conductor portion 21 located between the connection point with the second stub resonator 92 and the second conductor portion 22 is represented by symbol 21A, and the portion located between the connection point with the second stub resonator 92 and the ground wire is represented by symbol 21B.

[0107] In addition, in this embodiment, the laminate 50 includes Figure 11 The dielectric layer 157 shown replaces the seventh dielectric layer 57 in the first embodiment. Similar to dielectric layer 57, conductor layers 571 and 572 are formed on the patterned surface of dielectric layer 157. Conductor layers 573 and 574 are also formed on the patterned surface of dielectric layer 157. Conductor layer 573 is connected to conductor layer 571 midway. Conductor layer 574 is connected to conductor layer 572 midway. Figure 11 In the diagram, dashed lines represent the boundaries of conductor layers 571 and 573, and the boundaries of conductor layers 572 and 574, respectively.

[0108] The first stub-type resonator 91 is composed of a conductor layer 572. The second stub-type resonator 92 is composed of a conductor layer 574. The shapes of conductor layers 572 and 574 can be the same or different. Figure 11 In the example shown, the shapes of conductor layer 572 and conductor layer 574 are different.

[0109] The first and second stub-type resonators 91 and 92 are used, for example, to control parasitics generated in frequency regions higher than the passband. The first and second stub-type resonators 91 and 92 can be open-circuit stubs with one end released, or short-circuit stubs with one end grounded.

[0110] The other structures, functions, and effects of this embodiment are the same as those of the first embodiment.

[0111] [Third Implementation Method]

[0112] Next, refer to Figure 13 The third embodiment of the present invention will now be described. Figure 13 This is a circuit diagram showing the circuit structure of the cascaded filter device of this embodiment.

[0113] The filter device 1 of this embodiment differs from the second embodiment in the following aspects. The filter device 1 of this embodiment includes a fourth resonator 40. The fourth resonator 40 is arranged in the circuit structure between the second resonator 20 and the third resonator 30. In this embodiment, the first to fourth resonators 10, 20, 30, and 40 are configured such that the first resonator 10 and the third resonator 30 are adjacent in circuit structure and electromagnetically coupled, the third resonator 30 and the fourth resonator 40 are adjacent in circuit structure and electromagnetically coupled, and the second resonator 20 and the fourth resonator 40 are adjacent in circuit structure and electromagnetically coupled. Figure 13 In the diagram, the curve marked K13 represents the electric field coupling between the first resonator 10 and the third resonator 30, the curve marked K34 represents the magnetic field coupling between the third resonator 30 and the fourth resonator 40, and the curve marked K24 represents the electric field coupling between the second resonator 20 and the fourth resonator 40.

[0114] The structure of the fourth resonator 40 is basically the same as that of the third resonator 30. That is, the fourth resonator 40 includes a first conductor portion 41 and a second conductor portion 42 with a smaller impedance than the first conductor portion 41. The first conductor portion 41 and the second conductor portion 42 are electrically connected to each other. The first conductor portion 41 is grounded. In addition, the first conductor portion 41 and the second conductor portion 42 are each a distributed constant line. In this embodiment, in particular, the first conductor portion 41 is a distributed constant line with a small width, and the second conductor portion 42 is a distributed constant line with a larger width than the first conductor portion 41.

[0115] Similar to the first to third resonators 10, 20, and 30, the fourth resonator 40 is a stepped impedance resonator composed of a narrow-width distribution constant line and a wide-width distribution constant line.

[0116] Although not shown, the first conductor portion 41 and the second conductor portion 42 of the fourth resonator 40 are identical to the first conductor portion 31 and the second conductor portion 32 of the third resonator 30, but are arranged at different positions in the stacking direction T. The first conductor portion 31 and the first conductor portion 41 can be arranged at the same position in the stacking direction T, or they can be arranged at different positions in the stacking direction T. Similarly, the second conductor portion 32 and the second conductor portion 42 can be arranged at the same position in the stacking direction T, or they can be arranged at different positions in the stacking direction T.

[0117] In this embodiment, from the Z direction (refer to...) Figure 2 During observation, at least a portion of the third resonator 30 and at least a portion of the fourth resonator 40 are disposed between the first resonator 10 and the second resonator 20.

[0118] Furthermore, in this embodiment, when viewed from the Z direction, a portion of the first conductor portion 11 of the first resonator 10 may overlap with the first conductor portion 31 of the third resonator 30. In this case, when viewed from the Z direction, a portion of the first conductor portion 21 of the second resonator 20 may also overlap with the first conductor portion 41 of the fourth resonator 40.

[0119] Furthermore, in this embodiment, when viewed from the Z direction, a portion of the second conductor portion 12 of the first resonator 10 may overlap with the second conductor portion 32 of the third resonator 30. In this case, when viewed from the Z direction, a portion of the second conductor portion 22 of the second resonator 20 may also overlap with the second conductor portion 42 of the fourth resonator 40.

[0120] The filter device 1 of this embodiment further includes a third stub type resonator 93 electrically connected to the first conductor portion 31 of the third resonator 30, and a fourth stub type resonator 94 electrically connected to the first conductor portion 41 of the fourth resonator 40. The third and fourth stub type resonators 93 and 94 are each distributed constant circuits.

[0121] The third stubular resonator 93 is connected midway to the first conductor section 31. Figure 13 In the circuit diagram, the portion of the first conductor portion 31 located between the connection point with the third stub resonator 93 and the second conductor portion 32 is represented by symbol 31A, and the portion located between the connection point with the third stub resonator 93 and the ground wire is represented by symbol 31B.

[0122] The fourth stub-type resonator 94 is connected midway to the first conductor section 41. Figure 13 In the circuit diagram, the portion of the first conductor portion 41 located between the connection point with the fourth stub resonator 94 and the second conductor portion 42 is represented by symbol 41A, and the portion located between the connection point with the fourth stub resonator 94 and the ground wire is represented by symbol 41B.

[0123] The third and fourth stub-type resonators 93 and 94 are used, for example, to control parasitics generated in frequency regions higher than the passband. The third and fourth stub-type resonators 93 and 94 can be open-circuit stubs with one end released, or short-circuit stubs with one end grounded.

[0124] The other structures, functions, and effects of this embodiment are the same as those of the second embodiment.

[0125] Furthermore, the present invention is not limited to the embodiments described above, and various modifications can be made. For example, the number and structure of the resonators are not limited to those shown in the embodiments, as long as the claims are satisfied. The number of resonators can be one, two, or more than five.

[0126] Based on the above description, it can be seen that various modes and variations of the present invention can be implemented. Therefore, the present invention can also be implemented in ways other than the preferred mode described above within the equivalent scope of the claims.

Claims

1. A stacked filter device, characterized in that, have: A laminate comprising multiple stacked dielectric layers; At least one resonator is integrated with the laminate; Multiple through holes; and Multiple terminals, The at least one resonator includes a first conductor portion and a second conductor portion electrically connected to the first conductor portion and having a lower impedance than the first conductor portion. The first conductor portion and the second conductor portion are arranged at different positions in the stacking direction of the plurality of dielectric layers. The laminate has a first surface and a second surface located at both ends of the lamination direction. The plurality of terminals are disposed on the first surface. The second conductor portion is disposed between the first conductor portion and the first surface in the stacking direction. The plurality of through holes includes at least one through hole connecting the first conductor portion and the second conductor portion. The plurality of dielectric layers include specific dielectric layers having at least one via formed but not having conductor layers corresponding to the circuitry of the stacked filter device. The specific dielectric layer is disposed between the first conductor portion and the second conductor portion in the stacking direction.

2. The stacked filter device according to claim 1, characterized in that, The first conductor section and the second conductor section are each distributed constant lines.

3. The stacked filter device according to claim 1, characterized in that, The first conductor portion comprises multiple portions extending in multiple directions that are orthogonal to and different from the stacking direction.

4. The stacked filter device according to claim 1, characterized in that, When viewed from a direction parallel to the stacking direction, the planar shape of the stacked body is elongated in that direction. The second conductor portion has a shape that is longer along the long side of the planar shape of the laminate.

5. The stacked filter device according to claim 1, characterized in that, When viewed from a direction parallel to the stacking direction, the planar shape of the stacked body is elongated in one direction. The second conductor portion has a shape that extends in a direction that intersects the long side of the planar shape of the laminate.

6. The stacked filter device according to claim 1, characterized in that, The at least one resonator includes a first resonator, a second resonator, and a third resonator disposed in the circuit structure between the first resonator and the second resonator.

7. The stacked filter device according to claim 6, characterized in that, The laminate has a first side surface and a second side surface located at both ends in a direction orthogonal to the lamination direction. The first resonator is positioned closer to the first side than the second side. The second resonator is positioned closer to the second side than the first side.

8. The stacked filter device according to claim 6, characterized in that, When viewed from a direction parallel to the stacking direction, at least a portion of the third resonator is disposed between the first resonator and the second resonator.

9. The stacked filter device according to claim 6, characterized in that, The first conductor portion of the first resonator and the first conductor portion of the second resonator are positioned at the same location in the stacking direction. The first conductor portion of the third resonator is positioned in the stacking direction at a different location than the first conductor portions of the first resonator and the second resonator, respectively.

10. The stacked filter device according to claim 9, characterized in that, When viewed from a direction parallel to the stacking direction, a portion of the first conductor portion of the first resonator and a portion of the first conductor portion of the second resonator overlap with the first conductor portion of the third resonator.

11. The stacked filter device according to claim 6, characterized in that, The second conductor portion of the first resonator and the second conductor portion of the second resonator are positioned at the same location in the stacking direction. The second conductor portion of the third resonator is positioned in the stacking direction at a different location than the second conductor portions of the first and second resonators, respectively.

12. The stacked filter device according to claim 11, characterized in that, When viewed from a direction parallel to the stacking direction, a portion of the second conductor portion of the first resonator and a portion of the second conductor portion of the second resonator overlap with the second conductor portion of the third resonator.

13. The stacked filter device according to claim 6, characterized in that, The first conductor portion of the third resonator has an asymmetrical shape.

14. The stacked filter device according to claim 6, characterized in that, The shape of the first conductor portion of the third resonator is different from the shape of the first conductor portion of the first resonator and the shape of the first conductor portion of the second resonator. The shape of the second conductor portion of the third resonator is different from the shape of the second conductor portion of the first resonator and the shape of the second conductor portion of the second resonator.

15. The stacked filter device according to claim 6, characterized in that, It also has: A first stub-type resonator, electrically connected to the first conductor portion of the first resonator; and The second stub resonator is electrically connected to the first conductor portion of the second resonator.

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