A solar cell

Abstract

The application relates to a solar cell, a structure of the solar cell comprises a photoactive layer, the photoactive layer is a perovskite photoactive layer, at least one p-type region and at least one n-type region are arranged at the bottom of the photoactive layer, the p-type region and the n-type region are arranged at intervals, and electrodes are independently arranged below the p-type region and the n-type region respectively. In the application, the charge transport layer in the perovskite solar cell structure is arranged on the same side of the perovskite layer, a reduction film can be deposited on the other side of the perovskite layer, so that the light absorption of the photoactive layer can be more fully improved, the short-circuit current density of the device is improved, and the energy conversion efficiency is further improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photovoltaics, and relates to a solar cell, in particular to a structure of an organic metal halide perovskite solar cell. BACKGROUND

[0002] The organic metal halide perovskite solar cell has become one of the hotspots in the field of photovoltaics due to its low cost and high efficiency, and the commercialization process of this type of solar cell device has also attracted widespread attention. A perovskite solar cell generally consists of a substrate, a perovskite layer, an electron transport layer, a hole transport layer, and an external electrode. The electron and hole transport layers are collectively referred to as the charge transport layer. The working principle of the perovskite solar cell panel is that the perovskite layer absorbs light to generate electron-hole pairs, and the electrons and holes are rapidly separated in the perovskite layer and are extracted by the electron transport layer and the hole transport layer, respectively, and then transported to the external circuit. In the currently studied perovskite solar cell structure, the perovskite layer is usually sandwiched between the electron and hole transport layers, and the electron or hole transport layer on both sides of the perovskite layer will cause a certain parasitic absorption, thereby affecting the light response of the perovskite layer.

[0003] In the prior art, one technical solution discloses a perovskite solar cell, wherein the perovskite solar cell structure of the silicon-based thin film material includes: a conductive glass; an n-type electron transport layer made on the conductive glass; a perovskite photosensitive layer made on the n-type electron transport layer; a p-type hole transport layer made on the perovskite photosensitive layer; and a metal counter electrode made on the p-type hole transport layer. The disclosed solar cell structure is a traditional perovskite solar cell structure, and the P layer and the n layer are arranged at both ends of the perovskite photosensitive layer. The electron or hole transport layer on both sides of the perovskite layer will cause a certain parasitic absorption, thereby affecting the light response of the perovskite layer.

[0004] Another technical solution discloses an orthogonal cross-finger full-back contact perovskite solar cell and a preparation method thereof. The structure from bottom to top is: 1) a substrate; 2) a positive electrode; 3) a hole transport layer; 4) an insulating isolation layer; 5) a negative electrode; 6) an electron transport layer; 7) a perovskite absorption layer; 8) a passivation layer; and 9) an anti-reflection protective layer. The anti-reflection layer is provided on the perovskite absorption layer, and the hole transport layer and the electron transport layer are separated by the negative electrode. The hole transport layer and the electron transport layer are separated by the negative electrode, and the electrodes are in close contact, i.e. separated by the insulating isolation layer, which still has the risk of short circuit.

[0005] Another technical solution discloses a parallel interdigitated full back contact perovskite solar cell structure. From bottom to top, this structure consists of: 1) substrate; 2) positive electrode; 3) negative electrode; 4) hole transport layer; 5) electron transport layer; 6) perovskite absorber layer; 7) passivation layer; and 8) antireflection protection layer. While the perovskite absorber layer has an antireflection layer and the hole and electron transport layers are spaced apart, the negative electrode and electron transport layer are all embedded within the perovskite absorber layer. This limits the usability of the cell structure, restricting its stacking and splitting capabilities.

[0006] The research on the structure of perovskite solar cells focuses on how to use simple preparation methods to produce cells with high energy conversion efficiency and significantly improve the light absorption of the photoactive layer. Summary of the Invention

[0007] In view of the problems existing in the prior art, the present invention provides a method in which the charge transport layer in the conventional perovskite solar cell structure is placed on the same side of the perovskite layer, and an antireflection film is selectively deposited on the other side of the perovskite layer to form a solar cell structure. This method can more fully enhance the light absorption of the photoactive layer, thereby increasing the short-circuit current density of the device and thus improving the energy conversion efficiency.

[0008] To achieve the above-mentioned technical effects, the present invention adopts the following technical solution:

[0009] One of the objectives of this invention is to provide a solar cell.

[0010] The structure of the solar cell includes a photoactive layer.

[0011] The photoactive layer is a perovskite photoactive layer. At least one p-type region and at least one n-type region are provided at the bottom of the photoactive layer. The p-type region and the n-type region are spaced apart. Electrodes are independently provided below the p-type region and the n-type region, respectively.

[0012] In this invention, the charge transport layer in a conventional perovskite solar cell structure is placed on the same side of the perovskite layer, and an antireflection film is selectively deposited on the other side of the perovskite layer. This can more fully enhance the light absorption of the photoactive layer, thereby increasing the short-circuit current density of the device and thus improving the energy conversion efficiency.

[0013] In this invention, the P-type layer is the hole transport layer and the N-type layer is the electron transport layer. The working principle of the solar cell is as follows: After the top perovskite layer absorbs light, electrons and holes are extracted from the thin film by the bottom n-type region and P-type region, respectively, to complete the separation of electron-hole pairs, and then transported to the external circuit through the electrodes.

[0014] As a preferred technical solution of the present application, the photoactive layer is in contact with the n-type region or the p-type region to form a heterojunction structure.

[0015] In the present application, the connection between the photoactive layer and the n-type region or the p-type region is a different material, forming a heterojunction structure, and an n-type region is arranged between adjacent p-type regions.

[0016] Preferably, the minimum distance between the n-type region and the p-type region is 0-1 cm, wherein the distance can be 0, 0.5 μm, 1 μm, 10 μm, 100 μm, 1 mm, 3 mm, 6 mm, 9 mm or 1 cm, etc., but is not limited to the listed values, and other values not listed within this range are also applicable.

[0017] Preferably, a reduction layer and a substrate are arranged above the photoactive layer.

[0018] Preferably, the substrate includes any one of FTO conductive glass, ITO conductive glass, PI flexible substrate or PEN flexible substrate.

[0019] As a preferred technical solution of the present application, the photoactive layer includes an organic metal halide perovskite material and / or an inorganic metal halide perovskite material.

[0020] Preferably, the organic metal halide perovskite material and / or the inorganic metal halide perovskite material includes a three-dimensional structure ABX3, wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion.

[0021] Preferably, A includes any one of cesium, rubidium, methylamine group or formamidine, or a combination of at least two, typical but non-limiting examples of which include a combination of cesium and rubidium, a combination of rubidium and methylamine group, a combination of methylamine group and formamidine, or a combination of rubidium, methylamine group and formamidine, etc.

[0022] Preferably, B includes any one of lead, copper, zinc, gallium, tin or calcium, or a combination of at least two, typical but non-limiting examples of which include a combination of lead and copper, a combination of copper and zinc, a combination of gallium and tin, or a combination of tin and calcium, etc.

[0023] Preferably, X includes any one of iodine, bromine, chlorine, fluorine or thiocyanate ion, or a combination of at least two, typical but non-limiting examples of which include a combination of iodine and bromine, a combination of bromine and chlorine, or a combination of chlorine and fluorine and thiocyanate ion, etc.

[0024] Preferably, the photoactive layer is a non-open porosity photoactive layer.

[0025] Preferably, the thickness of the photoactive layer is ≤ 100 μm, which can be 0.3 μm, 0.5 μm, 1 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm, etc., but is not limited to the listed values, and other values not listed within the range of values are also applicable.

[0026] Preferably, the absorption band gap of the photoactive layer is 0.9-3.0 eV. The band gap can be 0.9 eV, 1.2 eV, 1.4 eV, 1.5 eV, 1.8 eV, 2.1 eV, 2.4 eV, 2.7 eV or 3.0 eV, etc., but is not limited to the listed values, and other values not listed within the range of values are also applicable.

[0027] As a preferred technical solution, the material of the antireflection layer comprises any one or a combination of at least two of LiF, MgF2, Si3N4, SiO2 or polydimethylsiloxane, typical but non-limiting examples of which include a combination of LiF and MgF2, a combination of MgF2 and Si3N4, a combination of Si3N4 and SiO2 or a combination of SiO2 and polydimethylsiloxane, etc.

[0028] Preferably, the thickness of the antireflection layer is ≤ 5 mm, which can be 1 μm, 5 μm, 10 μm, 1 mm, 2 mm, 3 mm, 4 mm or 5 mm, etc., but is not limited to the listed values, and other values not listed within the range of values are also applicable.

[0029] As a preferred technical solution, the n-type region comprises at least one n-type layer.

[0030] Preferably, the material of the n-type layer comprises any one or a combination of at least two of n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, TiSnO x , SnZnO x or any one or a combination of at least two of fullerene and derivatives, typical but non-limiting examples of which include a combination of n-type monocrystalline silicon and n-type polycrystalline silicon, a combination of n-type amorphous silicon and TiO2, a combination of SnO2 and ZnO and ZrO2 and GZO, a combination of IZO and FTO and ITO or a combination of BaSnO3 and TiSnO x and SnZnO x and fullerene and derivatives, etc., wherein 0 < x ≤ 4, which can be 0, 1, 2, 3 or 4, etc., but is not limited to the listed values, and other values not listed within the range of values are also applicable.

[0031] Preferably, the thickness of the n-type region is ≤ 100 μm, which can be 50 nm, 100 nm, 500 nm, 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or 100 μm, etc., but is not limited to the listed values, and other values not listed within this range are also applicable.

[0032] As a preferred technical solution of the present application, the p-type region comprises at least one P-type layer.

[0033] Preferably, the material of the P-type layer comprises any one or a combination of at least two of p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, polyethylene terephthalate, a polymer of 3-hexylthiophene, PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, NiOx, CuSCN, CuAlO2, or V2O5, typical but non-limiting examples of the combination being: a combination of p-type monocrystalline silicon and p-type polycrystalline silicon, a combination of p-type amorphous silicon and 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, a combination of polyethylene terephthalate and a polymer of 3-hexylthiophene, and a combination of PEDOT:PSS and Spiro-TTB, or a combination of CuAlO2 and V2O5, etc.

[0034] Preferably, the thickness of the P-type region is ≤ 100 μm, which can be 50 nm, 100 nm, 500 nm, 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or 100 μm, etc., but is not limited to the listed values, and other values not listed within this range are also applicable.

[0035] As a preferred technical solution of the present application, the material of the electrode comprises any one or a combination of at least two of Au, Ag, Al, Cu, graphene, or ITO, typical but non-limiting examples of the combination being: a combination of Au and Ag, a combination of Al and Cu, or a combination of graphene and ITO, etc.

[0036] Preferably, the thickness of the electrode is ≤ 10 μm, which can be 50 nm, 100 nm, 500 nm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm, etc., but is not limited to the listed values, and other values not listed within this range are also applicable.

[0037] As a preferred technical solution of the present application, at least one active layer is further arranged between the n-type region or the p-type region and the electrode.

[0038] Preferably, the active layer comprises, from top to bottom, a middle layer, a second p-type region, a silicon material layer, and a second n-type region, or a middle layer, a second n-type region, a silicon material layer, and a second p-type region.

[0039] The active layer in the present application plays a role in completing photoelectric conversion, can play a role in absorbing a certain band of spectrum alone, or play a role in distributing spectrum in combination of other materials such as the silicon material layer and the perovskite photoactive layer, so as to absorb light of different bands and improve the efficiency of the battery.

[0040] The middle layer arranged in the active layer in the present application has good light transmittance and electrical transmission performance, and can play a role in connecting the upper and lower battery structures. The second p-type region plays a role in extracting and conducting holes, the second n-type region plays a role in extracting and conducting electrons, and the silicon material layer plays a role in absorbing long-band light to improve efficiency.

[0041] As a preferred technical solution of the present application, the material of the middle layer comprises any one or a combination of at least two of polycrystalline silicon, amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, TiSnO x , SnZnO x , or fullerene and derivatives, and typical but non-limiting examples of the combination include: a combination of polycrystalline silicon and amorphous silicon, a combination of TiO2 and SnO2 and ZnO, a combination of ZrO2 and GZO and IZO, a combination of FTO and ITO, or a combination of BaSnO3 and TiSnO x and SnZnO x and fullerene and derivatives, etc.

[0042] Preferably, the thickness of the middle layer is ≤100 μm, and the thickness can be 0 nm, 30 nm, 50 nm, 1 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or 100 μm, etc., but is not limited to the listed values, and other values not listed in the range are also applicable.

[0043] Preferably, the second p-type region comprises at least one second p-type layer.

[0044] Preferably, the material of the second p-type layer includes any one or a combination of at least two of p-type monocrystalline silicon, p-type polycrystalline silicon, or p-type amorphous silicon. Typical but non-limiting examples of such combinations include: a combination of p-type monocrystalline silicon and p-type polycrystalline silicon, a combination of p-type polycrystalline silicon and p-type amorphous silicon, or a combination of p-type monocrystalline silicon and p-type amorphous silicon, etc.

[0045] Preferably, the silicon material layer includes any one or a combination of at least two of n-type polycrystalline silicon, i-type polycrystalline silicon, and p-type polycrystalline silicon. Typical but non-limiting examples of such combinations include combinations of n-type polycrystalline silicon and i-type polycrystalline silicon, combinations of i-type polycrystalline silicon and p-type polycrystalline silicon, and combinations of n-type polycrystalline silicon and p-type polycrystalline silicon.

[0046] Preferably, the second n-type region includes at least one second n-type layer.

[0047] Preferably, the material of the second n-type layer includes any one or a combination of at least two of n-type monocrystalline silicon, n-type polycrystalline silicon, or n-type amorphous silicon. Typical but non-limiting examples of such combinations include: a combination of n-type monocrystalline silicon and n-type polycrystalline silicon, a combination of n-type polycrystalline silicon and n-type amorphous silicon, or a combination of n-type monocrystalline silicon and n-type amorphous silicon, etc.

[0048] Preferably, the thickness of the second n-type layer and the second p-type layer is ≤100μm. The thickness can be 0nm, 30nm, 50nm, 100nm, 500nm, 1μm, 5μm, 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm or 100μm, etc., but is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0049] The methods for preparing all structural layers described in this invention include any one or a combination of at least two of spin coating, blade coating, vapor deposition, printing, spray coating, spray pyrolysis, slot coating, mechanical bonding, chemical vapor deposition, or physical vapor deposition. Typical but non-limiting examples of such combinations include: a combination of spin coating and blade coating, a combination of vapor deposition and printing, a combination of spray coating and spray pyrolysis, or a combination of slot coating and mechanical bonding. These operations are conventional in the art and are not specifically limited herein.

[0050] Compared with the prior art, the present invention has at least one of the following beneficial effects:

[0051] (1) In this invention, the charge transport layer in the conventional perovskite solar cell structure is placed on the same side of the perovskite layer, and an antireflection film is selectively deposited on the other side of the perovskite layer, thereby more fully enhancing the light absorption of the photoactive layer, thereby increasing the short-circuit current density of the device and thus improving the energy conversion efficiency.

[0052] (2) Suitable for use in stacked applications;

[0053] (3) Preparation is simple. BRIEF DESCRIPTION OF DRAWINGS

[0054] Figure 1 is a schematic diagram of the substrate position in the embodiment 1-7 of the present application.

[0055] Figure 2 is a schematic diagram of the coating structure on the substrate in the embodiment 1 of the present application.

[0056] Figure 3 is a schematic diagram of the coating structure on the substrate in the embodiment 2 of the present application.

[0057] Figure 4 is a schematic diagram of the coating structure on the substrate in the embodiment 3 of the present application.

[0058] Figure 5 is a schematic diagram of the coating structure on the substrate in the embodiment 4 of the present application.

[0059] Figure 6 is a schematic diagram of the coating structure on the substrate in the embodiment 5 of the present application.

[0060] Figure 7 is a schematic diagram of the coating structure on the substrate in the embodiment 6 of the present application.

[0061] Figure 8 is a schematic diagram of the coating structure on the substrate in the embodiment 7 of the present application.

[0062] Figure 9 is a schematic diagram of the coating structure in the comparative example 1 of the present application.

[0063] Figure 10 is a schematic diagram of the coating structure in the comparative example 2 of the present application.

[0064] In the figure: 1-antireflection layer; 2-photoactive layer; 3-p-type region; 4-n-type region; 5-electrode; 6-intermediate layer; 7-second n-type region; 8-silicon material layer; 9-second p-type region; 10-substrate. DETAILED DESCRIPTION

[0065] The technical solutions of the present application are further illustrated by specific embodiments in combination with the accompanying drawings. However, the following examples are only simple examples of the present application, and do not represent or limit the protection scope of the present application, and the protection scope of the present application is subject to the claims.

[0066] The present application provides a solar cell, and the structure of the solar cell comprises a photoactive layer 2.

[0067] Further, the photoactive layer 2 is a perovskite photoactive layer.

[0068] Further, the light active layer 2 is provided with at least one p-type region 3 and at least one n-type region 4, the p-type region 3 and the n-type region 4 are arranged at intervals, and electrodes 5 are independently arranged below the p-type region 3 and the n-type region 4, respectively.

[0069] In the present application, the charge transport layer in the conventional perovskite solar cell structure is placed on the same side of the perovskite layer, and a reduced reflection film is selectively deposited on the other side of the perovskite layer, so that the light absorption of the light active layer 2 can be more fully improved, thereby improving the short-circuit current density of the device, and further improving the energy conversion efficiency.

[0070] In the present application, the P-type region 3 is a hole transport layer, and the N-type region 4 is an electron transport layer. The working principle of the solar cell is as follows: after the top perovskite layer absorbs light, electrons and holes are extracted from the film by the bottom n-type region and P-type region, respectively, to complete the separation of electron-hole pairs, and then transported to the external circuit through the electrodes.

[0071] Further, the light active layer 2 and the n-type region 4 or the p-type region 3 form a heterojunction structure.

[0072] Further, an n-type region 4 is arranged between adjacent p-type regions 3.

[0073] Further, the minimum distance between the n-type region 4 and the p-type region 3 is 0-1 cm.

[0074] Further, a reduced reflection layer 1 and a substrate 10 are arranged above the light active layer 2.

[0075] Further, the substrate 10 includes any one of FTO conductive glass, ITO conductive glass, PI flexible substrate, or PEN flexible substrate.

[0076] Further, the light active layer 2 includes organic metal halide perovskite material and / or inorganic metal halide perovskite material.

[0077] Further, the organic metal halide perovskite material and / or inorganic metal halide perovskite material includes a three-dimensional structure ABX3, wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion.

[0078] Further, the A includes any one of cesium, rubidium, methylamine group, or formamidine, or a combination of at least two thereof.

[0079] Further, the B includes any one of lead, copper, zinc, gallium, tin, or calcium, or a combination of at least two thereof.

[0080] Further, the X comprises any one or a combination of at least two of iodine, bromine, chlorine, fluorine or thiocyanate ion.

[0081] Further, the photoactive layer 2 is an open-pore-free photoactive layer.

[0082] Further, the photoactive layer 2 has a thickness of ≤ 100 μm.

[0083] Further, the photoactive layer 2 has an absorption band gap of 0.9 to 3.0 eV.

[0084] Further, the material of the antireflection layer 1 comprises any one or a combination of at least two of LiF, MgF2, Si3N4, SiO2or polydimethylsiloxane.

[0085] Further, the antireflection layer 1 has a thickness of ≤ 5 mm.

[0086] Further, the n-type region 4 comprises at least one n-type layer.

[0087] Further, the material of the n-type layer comprises any one or a combination of at least two of n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, TiSnO x , SnZnO x or any one or a combination of at least two of fullerene and derivatives, wherein 0 < x ≤ 4.

[0088] Further, the n-type region 4 has a thickness of ≤ 100 μm.

[0089] Further, the p-type region 3 comprises at least one P-type layer.

[0090] Further, the material of the P-type layer comprises any one or a combination of at least two of p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, polyethylene terephthalate, a polymer of 3-hexylthiophene, PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, NiOx, CuSCN, CuAlO2or V2O5.

[0091] Further, the p-type region 3 has a thickness of ≤ 100 μm.

[0092] Further, the material of the electrode 5 comprises any one or a combination of at least two of Au, Ag, Al, Cu, graphene or ITO.

[0093] Further, the thickness of the electrode 5 is ≤ 10 μm.

[0094] Further, at least one active layer is arranged between the n-type region 4 or the p-type region 3 and the electrode 5.

[0095] Further, the active layer comprises, from top to bottom, a middle layer 6, a second p-type region 9, a silicon material layer 8 and a second n-type region 7 or a middle layer 6, a second n-type region 7, a silicon material layer 8 and a second p-type region 9.

[0096] Further, the material of the middle layer 6 comprises any one or a combination of at least two of polycrystalline silicon, amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, TiSnO x , SnZnO x or any one or a combination of at least two of fullerene and derivatives.

[0097] Preferably, the thickness of the middle layer 6 is ≤ 100 μm.

[0098] Preferably, the second p-type region 9 comprises at least one second p-type layer.

[0099] Preferably, the material of the second p-type layer comprises any one or a combination of at least two of P-type monocrystalline silicon, P-type polycrystalline silicon or P-type amorphous silicon.

[0100] Preferably, the silicon material layer 8 comprises any one or a combination of at least two of n-type polycrystalline silicon, i-type polycrystalline silicon or p-type polycrystalline silicon.

[0101] Preferably, the second n-type region 7 comprises at least one second n-type layer.

[0102] Preferably, the material of the second n-type layer comprises any one or a combination of at least two of n-type monocrystalline silicon, n-type polycrystalline silicon or n-type amorphous silicon.

[0103] Preferably, the thickness of the second n-type layer 7 and the second p-type layer 9 is ≤ 100 μm.

[0104] Embodiment 1

[0105] First, a FTO glass substrate 10 is placed as the uppermost layer of the solar cell (the position of the substrate is shown as Figure 1 .

[0106] This embodiment provides a coating structure on the substrate as shown in Figure 2 , a 100 x 100 cm 2The FTO conductive glass was cleaned, and a 1 μm thick MgF2 layer, i.e., antireflection layer 1, was prepared using thermal evaporation. A MAPbI3 precursor solution was drop-coated onto the edge of the substrate using a coater, and the solution was spread across the substrate at a speed of 1 cm / s. The substrate coated with the MAPbI3 precursor solution was transferred to a heating stage and heated at 100°C for 30 minutes to form a 500 nm thick perovskite film, i.e., photoactive layer 2. An n-type layer was deposited using a mask. Except for the preparation area where an n-type layer was deposited, the remaining areas were shielded with a metal plate. Then, a 49.99 × 100 cm² area was deposited on the surface of photoactive layer 2 using chemical vapor deposition. 2 A 50 nm thick SnO2 layer, i.e., n-type region 4, was deposited. After deposition, except for the region where the p-type layer was prepared, the remaining area was shielded with a metal plate. A 150 nm thick SnO2 layer with an area of ​​49.99 × 100 cm² was then prepared on the surface of the photoactive layer 2 using thermal evaporation. 2 The Spiro-TTB layer, i.e., p-type region 3, is constructed. The p-type and n-type regions are not in contact and are spaced 1 μm apart. Finally, electrodes Au are fabricated on the surfaces of p-type region 3 and n-type region 4 using thermal evaporation. The unfavorable regions are then shielded with a baffle to fabricate electrode 5, which has a thickness of 60 nm.

[0107] Example 2

[0108] First, take substrate 10. The substrate must be placed on top of the solar cell (substrate position as shown). Figure 1 (As shown).

[0109] This embodiment provides a method such as Figure 3 The coating structure shown is on a substrate measuring 200×100cm. 2 The ITO conductive glass of a certain area was cleaned, and a 2mm thick Si3N4 layer, i.e., antireflection layer 1, was prepared using a vapor deposition method. Cs 0.2 FA 0.8 PbI 2.4 Br 0.6 The precursor solution is uniformly coated onto ITO conductive glass, and the Cs coating is then applied. 0.2 FA 0.8 PbI 2.4 Br 0.6 The precursor solution substrate was transferred to a heating stage and heated at 100°C for 30 minutes to form a 1 μm thick perovskite film, i.e., the light-absorbing layer 2. An n-type layer was deposited using a mask, with the remaining areas shielded by a metal plate except for the designated n-type layer deposition area. Next, a PCBM, i.e., the n-type region 4, with a thickness of 100 nm and a fabrication area of ​​24.99 × 100 cm², was fabricated on the surface of the photoactive layer 2 using a slot coating method. 2After deposition, the rest of the area except the area for preparing the p-type layer was shielded by a metal plate, and a F4-TCNQ layer, i.e. the p-type region 3, was prepared on the surface of the photoactive layer 2 by an evaporation method, with a thickness of 100 nm and a preparation area of 24.99 x 100 cm 2 The n-type region and the p-type region were not in contact, and finally, an electrode Ag, i.e. the electrode 5, was prepared on the surface of the p-type region 3 and the n-type region 4 by a spray coating method, with a thickness of 80 nm.

[0110] Example 3

[0111] First, a substrate 10 was taken, which was to be placed on the uppermost layer of the solar cell (the substrate position is shown as Figure 1 .

[0112] This example provided a coating structure on a substrate as shown in Figure 4 , and a PI flexible substrate with an area of 300 x 100 cm 2 was cleaned, and a LiF layer, i.e. an anti-reflection layer 1, with a thickness of 1 mm was prepared by a spray pyrolysis method. The CH3NH3PbBr3 precursor solution was uniformly scraped on the PI flexible substrate. The substrate coated with the CH3NH3PbBr3 precursor solution was transferred to a heating table, and heated at 100 degrees Celsius for 30 minutes to form a perovskite film, i.e. a photoactive layer 2, with a thickness of 400 nm. An n-type layer was deposited using a mask, and the rest of the area except the area for preparing the n-type layer was shielded by a metal plate, and then an IZO, i.e. an n-type region 4, was prepared on the surface of the photoactive layer 2 by an evaporation method, with a thickness of 100 nm and a preparation area of 16 x 100 cm 2 . After deposition, the rest of the area except the area for preparing the p-type layer was shielded by a metal plate, and a CuAlO2, i.e. a p-type region 3, was prepared on the surface of the photoactive layer 2 by a printing method, with a thickness of 150 nm and a preparation area of 16 x 100 cm 2 . The p-type region and the n-type region were not in contact, with a spacing of 1 μm. Finally, an electrode Al, i.e. an electrode 5, was prepared on the surface of the p-type region 3 and the n-type region 4 by a thermal evaporation method, with a thickness of 1 μm.

[0113] Example 4

[0114] First, an FTO substrate 10 was taken, which was to be placed on the uppermost layer of the solar cell (the substrate position is shown as Figure 1 .

[0115] This example provided a coating structure on a substrate as shown in Figure 5 , and a PI flexible substrate with an area of 300 x 100 cm 2FTO substrate of 400 x 100 cm2area was cleaned, and a 400 nm thick SiO2layer, i.e. antireflection layer 1, was prepared using a slot coating method, and a 500 nm FA layer was prepared using a thermal evaporation method 0.8 MA 0.2 PbI3perovskite film, i.e. photoactive layer 2. The n-type layer was deposited using a mask, and the remaining part was shielded using a metal plate, except for the preparation area. Then, a SnO2layer, i.e. n-type area 4, was prepared on the surface of the photoactive layer 2 using a coating method, with a thickness of 100 nm and a preparation area of 49.99 x 100 cm 2 A ITO layer, i.e. intermediate layer 6, was prepared on the n-type layer using a sputtering method, with a thickness of 40 nm and a preparation area of 49.99 x 100 cm 2 A p-type polysilicon layer, i.e. second p-type area 9, was prepared on the ITO layer using a PVD (physical vapor deposition) method, with a thickness of 3 μm and a preparation area of 49.99 x 100 cm 2 An n-type silicon material layer, i.e. silicon material layer 8, was prepared on the p-type polysilicon using a CVD (chemical vapor deposition) method, with a thickness of 1 μm and a preparation area of 49.99 x 100 cm 2 An ITO layer, i.e. second n-type area 7, was prepared on the silicon material layer using a sputtering method, with a thickness of 100 nm and a preparation area of 49.99 x 100 cm 2 After deposition, a CuAlO2layer, i.e. p-type area 3, was prepared on the surface of the photoactive layer 2 using a spray coating method, with a thickness of 100 nm and a preparation area of 49.99 x 100 cm 2 Finally, an electrode Au, i.e. electrode 5, was prepared on the surface of the p-type area 3 and the n-type area 4 using a thermal evaporation method, with a thickness of 100 nm, and the non-preparation area was shielded using a baffle.

[0116] Example 5

[0117] First, a substrate 10 was taken, and the substrate was placed at the uppermost layer of the solar cell (the substrate position is shown in Figure 1

[0118] This example provides a coating structure on a substrate as shown in Figure 6 400 x 100 cm 2 An ITO conductive glass of 400 x 100 cm2area was cleaned, and a 1 μm thick MgF2layer, i.e. antireflection layer 1, was prepared using a thermal evaporation method. A 600 nm MAPbI3layer, i.e. photoactive layer 2, was prepared using a thermal evaporation method. The n-type layer was deposited using a mask, and the remaining part was shielded using a metal plate, except for the preparation area. Then, a BaSnO3layer, i.e. n-type area 4, was prepared on the surface of the photoactive layer 2 using a slot coating method, with a thickness of 70 nm and a preparation area of 49.99 x 100 cm 2 ​, continue to use evaporation method to prepare IZO layer on n-type region, to obtain intermediate layer 6, thickness is 50nm, preparation area is 49.99x100cm 2 , use PVD method (physical vapor phase method) to prepare p-type polysilicon layer on IZO layer, that is, second p-type region 9, thickness is 2μm, preparation area is 49.99x100cm 2 , use CVD method (chemical vapor phase method) to prepare n-type polysilicon material on p-type monocrystalline silicon, that is, silicon material layer 8, to obtain second n-type region 7, thickness is 1.5μm, preparation area is 49.99x100cm 2 . After deposition, except the area for preparing p-type layer, the rest is shielded by metal plate, use evaporation method to prepare PTAA layer on the surface of photoactive layer 2, that is, p-type region 3, thickness is 175nm, preparation area is also 49.99x100cm 2 . Finally, use printing method to prepare electrode Al on the surface of p-type region 3 and n-type region 4, that is, electrode 5, thickness is 1μm.

[0119] Example 6

[0120] This embodiment provides a coating structure on a substrate as shown in Figure 7 , in this embodiment, continue to use evaporation method to prepare ITO on Spiro-TTB, that is, intermediate layer 6, thickness is 40nm, preparation area is 49.99x100cm 2 . Use PVD method to prepare n-type amorphous silicon on ITO, that is, second n-type region 7, thickness is 1μm, preparation area is 49.99x100cm 2 . Use PVD method to prepare i-type polysilicon material on n-type amorphous silicon, that is, silicon material layer 8, thickness is 1μm, preparation area is 49.99x100cm 2 . Use PVD method to prepare p-type polysilicon on i-type silicon material layer, that is, second p-type region 9, thickness is 500nm, preparation area is 49.99x100cm 2 , the rest is the same as example 1.

[0121] Example 7

[0122] This embodiment provides a coating structure on a substrate as shown in Figure 8 , in this embodiment, remove TiO2 on n-type layer, p-type monocrystalline silicon, silicon material layer, n-type monocrystalline silicon, use printing method to prepare TiSnO x , that is, intermediate layer 6, thickness is 150nm, preparation area is 49.9x100cm 2 . Use PVD method to prepare i-type polysilicon material on TiSnO xThe n-type polysilicon layer 7 was prepared on the layer using a PVD method, i.e. a second n-type region, with a thickness of 2.5 μm and a preparation area of 49.9 x 100 cm 2 The n-type polysilicon layer 8 was prepared on the n-type polysilicon layer using a printing method, i.e. a silicon material layer, with a thickness of 1 μm and a preparation area of 49.9 x 100 cm 2 The p-type amorphous silicon layer 9 was prepared on the silicon material layer using a CVD method, i.e. a second p-type region, with a thickness of 1.3 μm and a preparation area of 49.9 x 100 cm 2 The remaining conditions were the same as in Example 5.

[0123] Comparative Example 1

[0124] This comparative example provides a coating structure on a substrate as shown in Figure 9 In this comparative example, the FTO glass substrate 10 was prepared with Sn02, i.e. an n-type layer 4. The MAPbI3 perovskite layer, i.e. a photoactive layer 2, the Spiro-TTB layer, i.e. a p-type region 3, and the gold electrode, i.e. a metal electrode 5, were prepared in sequence. The preparation methods and thicknesses were the same as in Example 1, as shown in Figure 9 .

[0125] Comparative Example 2

[0126] This comparative example provides a coating structure on a substrate as shown in Figure 10 In this comparative example, the ITO glass substrate 10 was prepared with F4-TCNQ, i.e. a p-type region 3. The Cs 0.2 FA 0.8 PbI 2.4 Br 0.6 perovskite layer, i.e. a photoactive layer 2, the PCBM, i.e. an n-type region 4, and the silver electrode, i.e. a metal electrode 5, were prepared in sequence. The preparation methods and thicknesses were the same as in Example 2, as shown in Figure 10 .

[0127] The current density and energy conversion efficiency of the solar cells provided by Examples 1-7 and Comparative Examples 1-2 were tested, and the results are shown in Table 1.

[0128] The current density was tested by testing the quantum efficiency of the solar cell under different wavelengths of light and integrating the results.

[0129] Table 1

[0130]

[0131]

[0132] The comparative example is a commonly used perovskite battery structure, and it can be seen from the above results that the application has a significant effect of improving the short-circuit current density of the device.

[0133] The applicant declares that the application is illustrated by the above examples to show the detailed structural features of the application, but the application is not limited to the above detailed structural features, that is, it does not mean that the application must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvement of the application, equivalent replacement of the components selected by the application and addition of auxiliary components, selection of specific modes, etc. fall within the protection scope and disclosure scope of the application.

Claims

1. A solar cell, characterized in that, The structure of the solar cell includes a photoactive layer; The photoactive layer is a perovskite photoactive layer; The bottom of the photoactive layer is provided with at least one p-type region and at least one n-type region, the p-type region and the n-type region are arranged alternately, and electrodes are independently provided below the p-type region and the n-type region respectively; When at least one active layer is provided between the n-type region and the electrode, the active layer includes an intermediate layer, a second p-type region, a silicon material layer and a second n-type region connected sequentially from top to bottom. When at least one active layer is provided between the p-type region and the electrode, the active layer includes an intermediate layer, a second n-type region, a silicon material layer and a second p-type region connected sequentially from top to bottom. The second p-type region includes at least one second p-type layer; the second n-type region includes at least one second n-type layer; The material of the second p-type layer includes any one or a combination of at least two of p-type monocrystalline silicon, p-type polycrystalline silicon, or p-type amorphous silicon; The silicon material layer includes any one or a combination of at least two of n-type polycrystalline silicon, i-type polycrystalline silicon, and p-type polycrystalline silicon. The material of the second n-type layer includes any one or a combination of at least two of n-type monocrystalline silicon, n-type polycrystalline silicon, or n-type amorphous silicon.

2. The solar cell according to claim 1, characterized in that, The photoactive layer forms a heterojunction structure by contacting the n-type region or the p-type region, and an n-type region is disposed between adjacent p-type regions.

3. The solar cell according to claim 1, characterized in that, The minimum distance between the n-type region and the p-type region is 0~1cm.

4. The solar cell according to claim 1, characterized in that, An antireflective layer and a substrate are disposed above the photoactive layer.

5. The solar cell according to claim 4, characterized in that, The substrate includes any one of FTO conductive glass, ITO conductive glass, PI flexible substrate or PEN flexible substrate.

6. The solar cell according to claim 1 or 2, characterized in that, The photoactive layer comprises organometal halide perovskite materials and / or inorganic metal halide perovskite materials.

7. The solar cell according to claim 6, characterized in that, The organometal halide perovskite material and / or inorganic metal halide perovskite material comprises a three-dimensional structure ABX3, wherein A is a monovalent cation, B is a divalent cation, and X is a monovalent anion.

8. The solar cell according to claim 7, characterized in that, The A includes any one or a combination of at least two of cesium, rubidium, methylamino, or formamidinium.

9. The solar cell according to claim 7, characterized in that, The B includes any one or a combination of at least two of lead, copper, zinc, gallium, tin, or calcium.

10. The solar cell according to claim 7, characterized in that, X includes any one or a combination of at least two of the following: iodine, bromine, chloride, fluorine, or thiocyanate ions.

11. The solar cell according to claim 1, characterized in that, The photoactive layer is a photoactive layer with no open porosity.

12. The solar cell according to claim 1, characterized in that, The thickness of the photoactive layer is ≤100μm.

13. The solar cell according to claim 1, characterized in that, The absorption band gap of the photoactive layer is 0.9~3.0 eV.

14. The solar cell according to claim 4, characterized in that, The material of the antireflective layer includes any one or a combination of at least two of LiF, MgF2, Si3N4, SiO2, or polydimethylsiloxane.

15. The solar cell according to claim 4, characterized in that, The thickness of the antireflective layer is ≤5mm.

16. The solar cell according to claim 1, characterized in that, The n-type region includes at least one n-type layer.

17. The solar cell according to claim 16, characterized in that, The materials of the n-type layer include n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, and TiSnO. x SnZnO x Or any one or a combination of at least two of fullerenes and their derivatives, wherein 0 <x≤4。 18. The solar cell according to claim 1, characterized in that, The thickness of the n-type region is ≤100µm.

19. The solar cell according to claim 1, characterized in that, The p-type region includes at least one p-type layer.

20. The solar cell according to claim 19, characterized in that, The material of the P-type layer includes any one or a combination of at least two of the following: p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, polyethylene terephthalate, polymers of 3-hexylthiophene, PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, NiOx, CuSCN, CuAlO2, or V2O5.

21. The solar cell according to claim 1, characterized in that, The thickness of the p-type region is ≤100µm.

22. The solar cell according to claim 1, characterized in that, The electrode material includes any one or a combination of at least two of Au, Ag, Al, Cu, graphene, or ITO.

23. The solar cell according to claim 22, characterized in that, The thickness of the electrode is ≤10µm.

24. The solar cell according to claim 8, characterized in that, The intermediate layer is made of materials including polycrystalline silicon, amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, and TiSnO. x SnZnO x Or any one or a combination of at least two of fullerenes and their derivatives.

25. The solar cell according to claim 1, characterized in that, The thickness of the intermediate layer is ≤100 µm.

26. The solar cell according to claim 1, characterized in that, The thickness of the second n-type layer and the second p-type layer is ≤100 µm.

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