Organic electroluminescent device and preparation method and application thereof

Abstract

The application provides an organic electroluminescent device and a display device. The organic electroluminescent device comprises an anode, a first film layer and a second film layer. The anode and the first film layer are distributed in a first direction, which is perpendicular to a second direction from the anode or the first film layer to the second film layer. The second film layer comprises a first region corresponding to the anode and a second region corresponding to the first film layer. The second film layer comprises a doping material. The concentration of the doping material in the first region is greater than that in the second region. The application can solve the problems of lateral leakage of the device and light-emitting crosstalk caused thereby, and improve the performance of the device and the display effect.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an organic electroluminescent device and a preparation method and application thereof. BACKGROUND

[0002] The organic electroluminescent device generally exists a problem of transverse leakage, which affects the performance and display effect of the device, for example, causes light emission crosstalk and other adverse phenomena. SUMMARY

[0003] The present application provides an organic electroluminescent device and a preparation method and application thereof, to at least solve the problem of transverse leakage and light emission crosstalk caused thereby in the prior art, and improve the performance and display effect of the device.

[0004] In one aspect of the present application, an organic electroluminescent device is provided, comprising an anode, a first film layer and a second film layer, the anode and the first film layer are distributed in a first direction, the first direction is perpendicular to a second direction from the anode or the first film layer to the second film layer, the second film layer comprises a first region corresponding to the anode and a second region corresponding to the first film layer, the second film layer comprises a doping material, the concentration of the doping material in the first region is greater than the concentration of the doping material in the second region.

[0005] According to an embodiment of the present application, the concentration of the doping material in the second region is 0; or, the second region contains the doping material, and the concentration of the doping material in the second region has an increasing trend along the direction close to the first region.

[0006] According to an embodiment of the present application, the second film layer comprises at least one of a hole injection layer, an n-type charge generation layer, a p-type charge generation layer, an electron injection layer and an electron transport layer.

[0007] According to an embodiment of the present application, the second film layer comprises a hole injection layer and / or an n-type charge generation layer, and in the second direction, the concentration of the doping material in the second film layer has an increasing trend along the direction close to the anode; and / or, the second film layer comprises at least one of an electron injection layer, an electron transport layer and a p-type charge generation layer, and in the second direction, the concentration of the doping material in the second film layer has an increasing trend along the direction away from the anode.

[0008] According to an embodiment of the present application, the number of the anode is multiple, and the first film layer exists between every two adjacent anodes; and / or, the first film layer comprises a pixel definition layer.

[0009] According to an embodiment of the present application, the organic electroluminescent device comprises at least one light-emitting unit, wherein each of the light-emitting units comprises a sub-pixel layer corresponding to the anode; and / or the number of the light-emitting units is plural, and a charge generation layer is arranged between any two adjacent light-emitting units, the charge generation layer comprising an n-type charge generation layer and / or a p-type charge generation layer.

[0010] According to an embodiment of the present application, the doping material comprises a p-type doping material or an n-type doping material; optionally, the second film layer further comprises a host material, the host material comprising a hole transport material, the doping material comprising a p-type doping material; or the host material comprising an electron transport material, the doping material comprising an n-type doping material; optionally, the doping material comprises a p-type doping material, the mass of the p-type doping material being 0.1% to 50% of the mass of the second film layer; optionally, the doping material comprises an n-type doping material, the mass of the n-type doping material being 10% to 90% of the mass of the second film layer.

[0011] According to an embodiment of the present application, the hole transport material comprises one or more of compounds HT-1 to HT-34 and PH-47 to PH-86; and / or the p-type doping material comprises one or more of compounds HI-1 to HI-3; and / or the electron transport material comprises one or more of compounds ET-1 to ET-58 and PH-1 to PH-46; and / or the n-type doping material comprises one or more of transition metals, alkali metals, alkaline earth metals, lanthanide series metals, actinide series metals, metals of Group IVA of the Periodic Table, organic compounds, organometallic compounds, alkali metal inorganic salts, alkali metal organic salts, halogen salts of organic radicals, dimers of organic radicals, and organic radicals.

[0012] According to another aspect of the present application, there is provided a method for manufacturing the above-mentioned organic electroluminescent device, comprising: providing a substrate to be evaporated, the substrate to be evaporated comprising the anode and the first film layer, the anode and the first film layer being distributed in the first direction; constructing an electric field defining region corresponding to the anode, the electric field defining region having an electric field; evaporating a material of the second film layer on the substrate to be evaporated to form the second film layer comprising the first region corresponding to the anode and the second region corresponding to the first film layer; wherein the material of the second film layer is deposited on the anode through the electric field defining region to form the first region; and the material of the second film layer comprises the doping material.

[0013] According to still another aspect of the present application, there is provided a display device comprising the above-mentioned organic electroluminescent device.

[0014] In the present application, the doping material in the second film layer is concentrated in the effective area (i.e. the first area) of the second film layer corresponding to the anode, and is less or even not distributed in the non-effective area (i.e. the second area) of the second film layer corresponding to the first film layer, so that the injection and transmission of the transverse (parallel to the first direction) carriers can be inhibited, the transverse leakage and the problems caused thereby such as light emission cross talk can be avoided, and the device performance and display effect can be improved. Meanwhile, the concentration of the doping material in the effective area of the second film layer can also reduce the amount of the doping material and save the cost. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 Structure schematic diagram of an organic electroluminescent device (single-layer device) according to an embodiment of the present application;

[0016] Figure 2 Structure schematic diagram of an organic electroluminescent device (stacked-layer device) according to another embodiment of the present application;

[0017] Figure 3 Structure schematic diagram of a mask plate according to an embodiment of the present application;

[0018] Figure 4 Schematic diagram of the relative positions of the evaporation source, mask plate and substrate to be evaporated during the evaporation process according to an embodiment of the present application;

[0019] Figure 5 Schematic diagram of the distribution of the doping material and host material in the electric field defining area and non-electric field defining area during the evaporation process according to an embodiment of the present application;

[0020] Figure 6 Schematic diagram of the distribution of the doping material and host material in the direction of the electric field constructed during the evaporation of different film layers according to an embodiment of the present application.

[0021] Explanation of reference signs: 1: substrate; 2: anode; 3: hole injection layer; 41: first hole transport layer; 51: first electron blocking layer; 61: first sub-pixel layer; 62: second sub-pixel layer; 63: third sub-pixel layer; 71: first hole blocking layer; 81: first electron transport layer; 12: n-type charge generation layer; 13: p-type charge generation layer; 42: second hole transport layer; 52: second electron blocking layer; 72: second hole blocking layer; 82: second electron transport layer; 9: electron injection layer; 10: cathode; 11: pixel definition layer; 14: mask plate; 140: first opening; 15: first evaporation source; 16: second evaporation source; 100: substrate to be evaporated; Q 31 , Q 811 , Q 121 , Q 131 , Q 821 , Q 91 : first area; Q 32 , Q812 , Q 122 , Q 132 , Q 822 , Q 92 : second region. DETAILED DESCRIPTION

[0022] In order for those skilled in the art to better understand the solutions of the present application, the present application is further described in detail below. The following specific embodiments are only used to describe the principles and characteristics of the present application, and the examples are only used to explain the present application, and do not limit the scope of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0023] There is a common problem of lateral leakage in organic electroluminescent devices, which affects the performance and display effect of the device. For example, the organic electroluminescent device has red sub-pixels, green sub-pixels, blue sub-pixels, and common layers common to these sub-pixels, such as hole injection layer (HIL), electron injection layer (EIL), electron transport layer (ETL), and charge generation layer in a stacked device (including n-type charge generation layer and p-type charge generation layer), etc. These common layers are prone to lateral leakage, causing light crosstalk problems, resulting in color crosstalk between different color sub-pixels at low gray scale (brightness), the most common being from blue sub-pixel to red sub-pixel and / or green sub-pixel. The principle of crosstalk is mainly that, since the driving voltage of the blue light sub-pixel is high, the anode potential is large, so the blue light sub-pixel current will be injected into the red sub-pixel and / or green sub-pixel through the common layer such as hole injection layer, etc., thereby causing the red sub-pixel and / or green sub-pixel to emit light, resulting in lateral crosstalk. The occurrence of crosstalk pixels not only causes the color purity to decrease, but also causes the pixel light to increase, thereby causing the VGMP voltage to be too high, etc., affecting the display effect.

[0024] In view of the above problems, the embodiments of the present application provide an organic electroluminescent device, as shown in Figure 1 and Figure 2 , comprising an anode 2, a first film layer and a second film layer, the anode 2 and the first film layer are distributed in a first direction, the first direction is perpendicular to a second direction from the anode 2 or the first film layer to the second film layer, the second film layer comprises a first region corresponding to the anode 2 and a second region corresponding to the first film layer, the second film layer comprises a doped material, the concentration of the doped material in the first region is greater than the concentration of the doped material in the second region.

[0025] In this way, the doping material is concentrated in the effective area of the second film layer corresponding to the anode 2 (i.e., the first area), and is less or even not distributed in the non-effective area of the second film layer corresponding to the first film layer (i.e., the second area), so that the carrier injection and transmission in the lateral direction (parallel to the first direction shown in Figure 1 and Figure 2 , the lateral leakage and the light emission cross talk between pixels caused by the leakage can be avoided, and the device performance and display effect can be improved.

[0026] In addition, the doping material is concentrated in the effective area corresponding to the anode 2, so that the carrier injection and transmission ability in the vertical direction (parallel to the second direction along the anode 2 or the first film layer to the second film layer, such as the second direction shown in Figure 1 and Figure 2 , the device efficiency can be improved.

[0027] Meanwhile, the doping material is concentrated in the effective area, and the amount of the doping material can be reduced, and the cost can be saved.

[0028] Specifically, the second area can not contain the doping material (i.e., the concentration of the doping material in the second area is substantially 0), and in this case, the doping material in the second film layer is substantially distributed in the first area; or the second area contains the doping material (i.e., the concentration of the doping material in the second area is not 0), and when the second area contains the doping material, the concentration of the doping material in the second area increases in the direction close to the first area, and can gradually increase or increase in a gradient. In this way, the doping material is concentrated in the effective area of the second film layer close to the anode 2, and the carrier injection and transmission ability in the vertical direction can be further improved, and the problem of lateral leakage can be further reduced.

[0029] The concentration described in the present application can be the mass concentration, and the concentration of the doping material in the first area is the ratio of the mass of the doping material in the first area to the total mass of the first area (i.e., the proportion of the mass of the doping material in the first area to the sum of the mass of all materials forming the first area), and the concentration of the doping material in the second area is the ratio of the mass of the doping material in the second area to the total mass of the second area (i.e., the proportion of the mass of the doping material in the second area to the sum of the mass of all materials forming the second area).

[0030] As shown in Figure 1 and Figure 2 , the number of anodes 2 can be multiple, and the first film layer exists between every two adjacent anodes 2, i.e., every two adjacent anodes 2 are spaced apart by the first film layer.

[0031] Specifically, the first film layer can include a pixel define layer (PDL) 11.

[0032] Specifically, as shown in Figure 1 and Figure 2 The organic electroluminescent device comprises at least one (one or more) light-emitting unit, each light-emitting unit comprising a sub-pixel layer corresponding to one of the anodes 2, i.e., the number of sub-pixel layers is the same as the number of anodes 2, one sub-pixel layer corresponding to one anode 2, and the one sub-pixel layer and the one anode 2 are stacked along the second direction.

[0033] Specifically, the number of sub-pixel layers in each light-emitting unit can be multiple (the same as the number of anodes 2), and the multiple sub-pixel layers are distributed along the first direction, as shown in Figure 1 and Figure 2 Each light-emitting unit, for example, comprises 3 sub-pixel layers, i.e., a first sub-pixel layer 61, a second sub-pixel layer 62, and a third sub-pixel layer 63, which are sequentially distributed along the first direction.

[0034] For example, the first sub-pixel layer 61 is a red sub-pixel layer (or red light-emitting layer), the second sub-pixel layer 62 is a green sub-pixel layer (or green light-emitting layer), and the third sub-pixel layer 63 is a blue sub-pixel layer (or blue light-emitting layer), but not limited thereto.

[0035] As shown in Figure 1 and Figure 2 The above-mentioned organic electroluminescent device further comprises a substrate 1, a hole transport region, an electron transport region, and a cathode 10, and the light-emitting unit, the hole transport region, and the electron transport region are located between the anode 2 and the cathode 10, and parallel to the second direction along the direction from the anode 2 to the cathode 10. Among them, the substrate 1 can comprise an array substrate with a thin film transistor (TFT), and the array substrate comprises a planarization layer (PLA), and the anode 2 can be specifically arranged on the planarization layer.

[0036] For example, as shown in Figure 1 The number of light-emitting units in the organic electroluminescent device is one, i.e., the device is a single-layer light-emitting device, and the anode 2, the hole transport region, the light-emitting unit, the electron transport region, and the cathode 10 are sequentially stacked.

[0037] When the number of light-emitting units in the organic light-emitting device is multiple (at least two), the light-emitting units are stacked along the second direction, and at this time the organic electroluminescent device is a stacked device, and the hole transport region comprises a first hole transport region arranged between the anode 2 and the light-emitting unit closest to the anode 2 (the first light-emitting unit described below), and a first electron transport region arranged between the cathode 10 and the light-emitting unit closest to the cathode 10 (the second light-emitting unit described below).

[0038] Further, the stacked device further comprises a charge generation layer (CGL) between each two adjacent light emitting units, i.e. a charge generation layer is arranged between each two adjacent light emitting units, the charge generation layer comprises an n-type charge generation layer 12 (n-CGL) and a p-type charge generation layer 13 (p-CGL), in the adjacent n-type charge generation layer 12 and p-type charge generation layer 13, the n-type charge generation layer 12 is located on the side of the p-type charge generation layer 13 away from the cathode 10, and the p-type charge generation layer 13 is located on the side of the n-type charge generation layer 12 away from the anode 2; the hole transport region further comprises a second hole transport region, and the electron transport region further comprises a second electron transport region, in the charge generation layer between two adjacent light emitting units, the second electron transport region is arranged between the n-type charge generation layer 12 and one light emitting unit, and the second hole transport region is arranged between the p-type charge generation layer 13 and another light emitting unit.

[0039] Specifically, the above-mentioned hole transport region (the first hole transport region and the second hole transport region) can comprise at least one of a hole injection layer 3, a hole transport layer (HTL), and an electron blocking layer (EBL), for example, can be a single-layer structure of the hole transport layer (including a single-layer hole transport layer containing only one kind of compound or a single-layer hole transport layer containing multiple kinds of compounds), or can be a multi-layer structure comprising at least one of the hole injection layer 3, the hole transport layer, and the electron blocking layer.

[0040] Exemplarily, the first hole transport region comprises the hole injection layer 3, the hole transport layer, and the electron blocking layer, and the anode 2, the hole injection layer 3, the hole transport layer, the electron blocking layer, and the light emitting unit closest to the anode 2 are sequentially stacked.

[0041] Exemplarily, the second hole transport region comprises the hole transport layer and the electron blocking layer, and the p-type charge generation layer 13, the hole transport layer, the electron blocking layer, and the light emitting unit are sequentially stacked.

[0042] Specifically, the above-mentioned electron transport region (the first electron transport region and the second electron transport region) can comprise at least one of an electron injection layer 9, an electron transport layer, and a hole blocking layer (HBL), for example, can be a single-layer structure of the electron transport layer (including a single-layer electron transport layer containing only one kind of compound or a single-layer electron transport layer containing multiple kinds of compounds), or can be a multi-layer structure comprising at least one of the electron injection layer 9, the electron transport layer, and the hole blocking layer.

[0043] Exemplarily, the first electron transport region comprises the electron injection layer 9, the electron transport layer, and the hole blocking layer, and the light emitting unit closest to the cathode 10, the hole blocking layer, the electron transport layer, the electron injection layer 9, and the cathode 10 are sequentially arranged.

[0044] Exemplarily, the second electron transport region includes an electron transport layer and a hole blocking layer, and the light emitting unit, the hole blocking layer, the electron transport layer, and the n-type charge generation layer 12 are sequentially stacked.

[0045] In some embodiments, as shown in FIG. 1, the organic electroluminescent device is a single-layer device, which includes the anode 2, the first hole injection layer 3, the first hole transport layer 41, the first electron blocking layer 51, the first light emitting unit, the first hole blocking layer 71, the first electron transport layer 81, the first electron injection layer 9, and the cathode 10, which are sequentially stacked. Figure 1

[0046] In some embodiments, as shown in FIG. 1, the organic electroluminescent device is a single-layer device, which includes the anode 2, the first hole injection layer 3, the first hole transport layer 41, the first electron blocking layer 51, the first light emitting unit, the first hole blocking layer 71, the first electron transport layer 81, the first electron injection layer 9, and the cathode 10, which are sequentially stacked. Figure 2

[0047] In some embodiments, as shown in FIG. 1, the organic electroluminescent device is a single-layer device, which includes the anode 2, the first hole injection layer 3, the first hole transport layer 41, the first electron blocking layer 51, the first light emitting unit, the first hole blocking layer 71, the first electron transport layer 81, the first electron injection layer 9, and the cathode 10, which are sequentially stacked.

[0048] Specifically, the anode 2 and the first film layer are located on the same side of the second film layer, the first region corresponds to the anode 2, i.e., the projection of the first region on the substrate 1 substantially overlaps the projection of the anode 2 on the substrate 1; and the second region corresponds to the first film layer, i.e., the projection of the second region on the substrate 1 at least partially overlaps the projection of the first film layer on the substrate 1, and substantially does not overlap the projection of the anode 2 on the substrate 1.

[0049] ​​The second film layer is a common layer (or general layer) in the organic electroluminescent device, and can specifically include at least one of the hole injection layer 3, the n-type charge generation layer 12, the p-type charge generation layer 13, the electron injection layer 9, and the electron transport layer, that is, one or more of the hole injection layer 3, the n-type charge generation layer 12, the p-type charge generation layer 13, the electron injection layer 9, and the electron transport layer of the organic electroluminescent device contains a dopant material adapted thereto, and the distribution of the dopant material therein satisfies the distribution form of the dopant material in the second film layer as described above, that is, the concentration of the dopant material in the first region of the second film layer on the anode 2 is greater than the concentration of the dopant material in the second region of the second film layer on the first film layer. The electron transport layer can include the first electron transport layer 81 and / or the second electron transport layer 82.

[0050] Specifically, as shown in Figure 1 and Figure 2 , when the hole injection layer 3 is the second film layer, it includes a first region Q 31 corresponding to the anode 2 (on the anode 2) 32 and a second region Q 31 corresponding to the first film layer (on the first film layer) , the hole injection layer 3 contains a dopant material, and the concentration of the dopant material in the first region Q 32 is greater than the concentration of the dopant material in the second region Q 32 . Among them, the concentration of the dopant material in the second region Q 32 may be substantially equal to 0 or greater than 0, when greater than 0, the concentration of the dopant material in the second region Q 31 tends to increase along the direction close to the first region Q 91 , and can specifically gradually increase or increase in a gradient.

[0051] When the electron injection layer 9 is the second film layer, it includes a first region Q 91 corresponding to the anode 2 92 and a second region Q 91 corresponding to the first film layer , the electron injection layer 9 contains a dopant material, and the concentration of the dopant material in the first region Q 92 is greater than the concentration of the dopant material in the second region Q 92 . Among them, the concentration of the dopant material in the second region Q 92 may be substantially equal to 0 or greater than 0, when greater than 0, the concentration of the dopant material in the second region Q 91 tends to increase along the direction close to the first region Q 811 , and can specifically gradually increase or increase in a gradient.

[0052] When the first electron transport layer 81 is the second film layer, it includes a first region Q 811 corresponding to the anode 2 812, the first electron transport layer 81 contains a dopant material, the concentration of the dopant material in the first region Q 811 is greater than the concentration of the dopant material in the second region Q 812 . The concentration of the dopant material in the second region Q 812 may be substantially equal to 0 or greater than 0, and when greater than 0, the concentration of the dopant material in the second region Q 812 increases in a direction closer to the first region Q 811 , and specifically can gradually increase or increase in a gradient.

[0053] When the second electron transport layer 82 is a second film layer, it includes a first region Q 821 corresponding to the anode 2 and a second region Q 822 corresponding to the first film layer, the second electron transport layer 82 contains a dopant material, the concentration of the dopant material in the first region Q 821 is greater than the concentration of the dopant material in the second region Q 822 . The concentration of the dopant material in the second region Q 822 may be substantially equal to 0 or greater than 0, and when greater than 0, the concentration of the dopant material in the second region Q 822 increases in a direction closer to the first region Q 821 , and specifically can gradually increase or increase in a gradient.

[0054] When the n-type charge generation layer 12 is a second film layer, it includes a first region Q 121 corresponding to the anode 2 and a second region Q 122 corresponding to the first film layer, the n-type charge generation layer 12 contains a dopant material, the concentration of the dopant material in the first region Q 121 is greater than the concentration of the dopant material in the second region Q 122 . The concentration of the dopant material in the second region Q 122 may be substantially equal to 0 or greater than 0, and when greater than 0, the concentration of the dopant material in the second region Q 122 increases in a direction closer to the first region Q 121 , and specifically can gradually increase or increase in a gradient.

[0055] When the p-type charge generation layer 13 is a second film layer, it includes a first region Q 131 corresponding to the anode 2 and a second region Q 132 corresponding to the first film layer, the p-type charge generation layer 13 contains a dopant material, the concentration of the dopant material in the first region Q 131 is greater than the concentration of the dopant material in the second region Q 132 . The concentration of the dopant material in the second region Q 132 may be substantially equal to 0 or greater than 0, and when greater than 0, the concentration of the dopant material in the second region Q132 The concentration of the doping material in the first region Q 131 may gradually increase or increase in a gradient manner.

[0056] wherein, Figure 1 and Figure 2 The dashed line in the first region and the second region is a virtual line segment drawn to show the first region and the second region, and is not a structure that actually exists.

[0057] As shown in Figure 1 and Figure 2 When the number of anodes 2 is multiple, the number of the first regions in which the second film layer is distributed in the first direction is multiple, the number of the second regions in which the second film layer is distributed in the first direction is multiple, the multiple first regions and the multiple second regions are staggered in the first direction, the concentration of the doping material in any first region is greater than the concentration of the doping material in any second region, and when the concentration of the doping material in any second region is greater than 0, the concentration of the doping material in the second region increases in a direction close to the first region, that is, the doping material in the second region is concentrated on the opposite sides of the second region in the first direction, that is, in the first direction, the concentration of the doping material in the middle position of the second region is the lowest (for example, substantially 0), and from the middle position of the second region, the concentration of the doping material increases in a direction close to the first region on one side thereof and in a direction close to the first region on the other side thereof, respectively.

[0058] In some embodiments, the second film layer includes the hole injection layer 3 and / or the n-type charge generation layer 12, and in the second direction, the concentration of the doping material in the second film layer increases in a direction close to the anode 2, that is, when the hole injection layer 3 and the n-type charge generation layer 12 are the second film layer, in the second direction, the concentration of the doping material in the hole injection layer 3 increases in a direction close to the anode 2, and the concentration of the doping material in the n-type charge generation layer 12 increases in a direction close to the anode 2. In this way, in the second direction (vertical direction), the doping material in the second film layer is concentrated in the region closer to the anode 2, increasing the distribution of the doping material at the interface of the second film layer close to the anode 2, which can enhance the injection and transport capacity of the carriers in the vertical direction, further improving the performance of the device.

[0059] In some embodiments, the second film layer comprises at least one of the electron injection layer 9, the electron transport layer (such as the first electron transport layer 81 and / or the second electron transport layer 82), and the p-type charge generation layer 13, and the concentration of the dopant material in the second film layer has a tendency to increase in a direction away from the anode 2 in the second direction, and specifically can gradually increase or increase in a gradient manner, i.e., when these layers are respectively the second film layer described above, the concentration of the dopant material in the electron injection layer 9 has a tendency to increase in a direction away from the anode 2 in the second direction, the concentration of the dopant material in the electron transport layer (such as the first electron transport layer 81 and / or the second electron transport layer 82) has a tendency to increase in a direction away from the anode 2 in the second direction, and the concentration of the dopant material in the p-type charge generation layer 13 has a tendency to increase in a direction away from the anode 2 in the second direction. In this way, in the second direction, the dopant material in the second film layer is concentrated in a region farther away from the anode 2, increasing the distribution of the dopant material at the interface of the second film layer away from the anode 2, which can enhance the injection and transport capacity of carriers in the vertical direction and further improve the performance of the device.

[0060] Specifically, the dopant material described above can include an n-type dopant material or a p-type dopant material, and in general, the dopant material in the hole injection layer 3 and the dopant material in the p-type charge generation layer 13 respectively include a p-type dopant material, and the dopant material in the hole injection layer 3 and the dopant material in the p-type charge generation layer 13 can be the same or different; the dopant material in the electron injection layer 9, the dopant material in the electron transport layer (such as the first electron transport layer 81 and / or the second electron transport layer 82), and the dopant material in the n-type charge generation layer 12 respectively include an n-type dopant material, and the dopant materials in these layers can be the same or different.

[0061] In addition, the second film layer further comprises a host material, and the host material exists in the first region and the second region (i.e., the first region and the second region each respectively comprise the host material), and in general, the material in the second region is mainly the host material, and when the second region is substantially free of dopant material (i.e., the concentration of the dopant material therein is substantially 0), the second region can be entirely the host material.

[0062] The host material described above can include a hole transport material (hole transport type host material) HTM or an electron transport material (electron transport type host material) ETM. In general, when the host material in the second film layer includes a hole transport material HTM, the dopant material therein includes a p-type dopant material PD; and when the host material in the second film layer includes an electron transport material ETM, the dopant material therein includes an n-type dopant material ND.

[0063] Specifically, the host material in the hole injection layer 3 and the host material in the p-type charge generation layer 13 each comprises a hole transport material HTM, and the host material in the hole injection layer 3 and the host material in the p-type charge generation layer 13 can be the same or different; the host material in the electron injection layer 9, the host material in the electron transport layer (such as the first electron transport layer 81 and / or the second electron transport layer 82), and the host material in the n-type charge generation layer 12 each comprises an electron transport material ETM, and the host materials in these layers can be the same or different.

[0064] In addition, the mass concentration of the dopant material in the second film layer can be 0.1% to 90% (i.e. the mass of the dopant material is 0.1% to 90% of the mass of the second film layer), for example 0.1%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, or a range formed by any two of them.

[0065] In addition, the mass concentration of the host material in the second film layer can be 10% to 99.9% (i.e. the mass of the host material is 10% to 99.9% of the mass of the second film layer), for example 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99.9%, or a range formed by any two of them.

[0066] When the second film layer comprises multiple film layers (for example, it comprises at least two of the hole injection layer 3 and the p-type charge generation layer 13, the electron injection layer 9, the first electron transport layer 81, the second electron transport layer 82, and the n-type charge generation layer 12), the mass concentration of the dopant material or the host material in the second film layer refers to the mass concentration of the dopant material or the host material in a single film layer, i.e. the proportion of the dopant material or the host material contained in each of these film layers to its respective mass. For example, when the second film layer comprises the p-type charge generation layer 13 and the n-type charge generation layer 12, the mass concentration of the dopant material in the second film layer as described above is 0.1% to 90% means that the mass concentration of the dopant material in the p-type charge generation layer 13 is 0.1% to 90%, and the mass concentration in the n-type charge generation layer 12 is 0.1% to 90%.

[0067] In some embodiments, the dopant material in the second film layer (such as the hole injection layer 3 or the p-type charge generation layer 13 described above) comprises a p-type dopant material PD, and the host material comprises a hole transport material HTM, the mass concentration of the dopant material being 0.1% to 50%, such as 0.1%, 1%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, or a range between any two of them, and the mass concentration of the host material being 50% to 99.9%, such as 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99.9%, or a range between any two of them.

[0068] In some embodiments, the dopant material in the second film layer (such as the electron injection layer 9, the electron transport layer (the first electron transport layer 81 or the second electron transport layer 82), or the n-type charge generation layer 12 described above) comprises an n-type dopant material ND, and the host material comprises an electron transport material ETM, the mass concentration of the dopant material being 10% to 90%, such as 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, or a range between any two of them, and the mass concentration of the host material being 10% to 90%, such as 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, or a range between any two of them.

[0069] In particular, the hole transport material HTM described above can comprise one or more of the following compounds HT-1 to HT-34 and PH-47 to PH-86:

[0070]

[0071]

[0072]

[0073]

[0074] In addition, the p-type dopant material PD described above can comprise one or more of the following compounds HI-1 to HI-3:

[0075]

[0076] In addition, the electron transport material ETM described above can comprise one or more of the following compounds ET-1 to ET-58 and PH-1 to PH-46:

[0077]

[0078]

[0079]

[0080]

[0081]

[0082] In addition, the n-type doping material ND includes one or more of transition metals, alkali metals, alkaline earth metals, lanthanide metals, actinide metals, Group IVA metals (Sn, etc.), organic compounds, organometallic compounds, alkali metal inorganic salts, alkali metal organic salts, halogen salts of organic radicals, dimers of organic radicals, and organic radicals.

[0083] For example, the transition metals include one or more of Cu, Ag, Au, etc., the alkali metals include Li, etc., the alkaline earth metals include one or more of Mg, Ca, Sr, etc., the lanthanide metals include Yb and / or Sm, etc., the organic compounds include the following BEDT-TTF and / or TTN, the organometallic compounds include one or more of the following Co(Cp)2, R3, W2(hpp)4, (RhCpCp)2, etc., the halogen salts of organic radicals include one or more of the following Pyronin B, Crysta Violet, o-MeO-DMBI, etc., the dimers of organic radicals include the following (2-R-DMBI)2, etc., and the organic radicals include the following R1and / or R2, etc.

[0084]

[0085]

[0086] The present application also provides a preparation method of the organic electroluminescent device, as shown in the following formula: Figures 4 to 6 The preparation method includes the following steps:

[0087] providing a substrate 100 to be evaporated, the substrate 100 to be evaporated includes the anode 2 and the first film layer, and the anode 2 and the first film layer are distributed in the first direction (as shown in the following formula): Figures 1 to 5

[0088] constructing an electric field limiting area corresponding to the anode 2, the electric field limiting area has an electric field;

[0089] ​The material of the second film layer is vapor-deposited onto the substrate 100 to be vapor-deposited, forming a functional film layer including a first region corresponding to the anode 2 and a second region corresponding to the first film layer; wherein, the material of the second film layer is deposited on the anode 2 through an electric field-defined region to form the first region, and the material of the second film layer includes the doped material mentioned above.

[0090] In the above preparation process, an electric field-defined region corresponding to the anode 2 is constructed. The material of the second film layer is deposited on the anode 2 through the electric field-defined region to form the first region. In the material transport path of the second film layer to the substrate 100 to be vaporized, the region corresponding to the first film layer is a non-electric field-defined region (no electric field exists). The material of the second film layer is deposited on the first film layer through the non-electric field-defined region to form the second region. Since an electric field exists in the electric field-defined region, the doped material can be induced to concentrate in the electric field-defined region (in the first direction, the closer the region is to the electric field-defined region, the more doped material there is). The further away from the electric field-limited region, the less doped material there is, while in the non-electric field-limited region, there is less or even no doped material (for example, by adjusting the electric field strength in the electric field-limited region, under the action of a larger electric field force, the doped material is induced to be almost entirely distributed in the electric field-limited region, while there is basically no doped material in the non-electric field-limited region). Thus, the material through the electric field-limited region is deposited on the substrate 100 to be evaporated to form a first region, and the material through the non-electric field-limited region is deposited on the substrate 100 to be evaporated to form a second region. The concentration of doped material in the second region is less than the concentration of doped material in the first region.

[0091] Specifically, the material of the second film layer also includes the aforementioned host material. During the evaporation process, the host material and the doped material will form a charge transfer dipole when they come into close proximity. Through the electric field effect of the electric field-limited region, the charge transfer dipole is induced to concentrate in the electric field-limited region, thereby realizing that the doped material is concentrated in the electric field-limited region, while it is less distributed in the non-electric field-limited region (the material in the non-electric field-limited region is mainly the host material), or even not distributed at all.

[0092] In practice, the material of the second film layer is evaporated using an evaporation source, and the formation of the second film layer at a preset position on the substrate 100 to be deposited is controlled by a mask 14. The electric field-limited region is located on the side of the substrate 100 to be deposited facing the evaporation source.

[0093] like Figure 3 and Figure 4 As shown, the mask 14 has a plurality of first openings 140, which can be arranged in an array on the mask 14. Each first opening 140 corresponds to a substrate 100 to be vapor-deposited. Through the plurality of first openings 140, multiple substrates 100 to be vapor-deposited can be vapor-deposited simultaneously. The width direction of the first opening 140 is parallel to a third direction (e.g., ...).Figure 3 The length direction of the first opening 140 is parallel to the first direction, but is not limited thereto, the third direction is perpendicular to the first direction, and the third direction is perpendicular to the second direction.

[0094] As shown in Figure 4 and Figure 5 As shown in Figure 4 To show the relative positions of the evaporation source, the mask plate 14 having a plurality of first openings 140, and the plurality of to-be-evaporated substrates 100, a schematic view of evaporating one to-be-evaporated substrate 100 through one first opening 140 of the mask plate 14 is shown, Figure 5 The evaporation source includes a first evaporation source 15 for evaporating a host material and a second evaporation source 16 for evaporating a dopant material, which are located on the same side of the to-be-evaporated substrate 100 and respectively evaporate the host material and the dopant material towards the to-be-evaporated substrate 100, and the materials are deposited on the to-be-evaporated substrate 100 through the first opening 140 of the mask plate 14 to form a second film layer.

[0095] Generally, the evaporation process is carried out in a chamber, that is, the evaporation source, the to-be-evaporated substrate 100, and the mask plate 14 are located in the chamber, and the materials of the second film layer are evaporated on the to-be-evaporated substrate 100 in the chamber.

[0096] Generally, the orientation of the dipole formed by the hole transport material HTM and the p-type dopant material PD (the direction of the built-in electric field thereof) is from the hole transport material HTM to the p-type dopant material PD, and the orientation of the dipole formed by the electron transport material ETM and the n-type dopant material ND is from the n-type dopant material ND to the electron transport material ETM. The direction of the built-in electric field of the dipole is opposite to the direction of the external electric field of the environment (such as the electric field limiting region described above), and in a specific implementation, the orientation of the dipole can also be regulated by controlling the direction of the electric field of the electric field limiting region to induce the distribution of the dopant material in the second direction.

[0097] For example, as shown in Figure 6 When the hole injection layer 3 is evaporated, the host material includes the hole transport material HTM, the dopant material includes the p-type dopant material PD, and the direction of the electric field of the electric field limiting region is away from the anode 2 (such as the direction shown by the arrow A1 in Figure 6 Thus, not only can the dipole formed by the hole transport material HTM and the p-type dopant material PD be induced to be close to the anode 2, but also the direction of the built-in electric field of the dipole can be induced to be towards the anode 2 (such as the direction shown by the arrow A2 in Figure 6(As indicated by arrow B1 in the image), the p-type doped material PD in the induced dipole moves closer to the anode 2, while the hole transport material HTM moves away from the anode 2. This causes the doped material to concentrate more at the interface near the anode 2, resulting in the concentration of the doped material in the hole injection layer 3 increasing in the second direction along the direction closer to the anode 2.

[0098] For example, Figure 5 This shows the distribution of the host material (hole transport material HTM) and the dopant material (p-type dopant PD) under the action of an electric field when the hole injection layer 3 is deposited by evaporation. Figure 5 The dashed lines in the diagram represent the boundary between the field-defined region and the non-field-defined region. These dashed lines are only used to indicate the field-defined and non-field-defined regions and are not actual physical entities. See also... Figure 5 The substrate 100 to be deposited includes a substrate 1 and an anode 2 and a first film layer (i.e., pixel definition layer 11) disposed on the substrate 1. Hole transport material HTM is evaporated by a first evaporation source 15, and p-type doped material PD is evaporated by a second evaporation source 16. Hole transport material HTM and p-type doped material PD form a dipole. The dipole is concentrated in the electric field-limited region and is basically not distributed in the non-electric field-limited region. In the electric field-limited region, the p-type doped material PD in the dipole is close to the anode 2, while the hole transport material HTM is far away from the anode 2.

[0099] like Figure 6 As shown, when the n-type charge generation layer 12 is deposited, the host material includes electron transport material ETM, the doped material includes n-type doped material ND, and the electric field direction of the electric field confinement region is towards the anode 2 (e.g., Figure 6 (As indicated by arrow A2 in the image), this not only induces the dipole formed by the electron transport material ETM and the n-type doped material ND to approach the anode 2, but also induces the built-in electric field of the dipole to tend towards the direction away from the anode 2 (e.g., ...). Figure 6 (As indicated by arrow B2 in the image), the n-type doped material ND in the induced dipole moves closer to the anode 2, while the electron transport material ETM moves away from the anode 2. This causes the doped material to concentrate more at the interface near the anode 2, resulting in the formation of the n-type charge generation injection layer. The concentration of the doped material increases in the second direction along the direction closer to the anode 2.

[0100] like Figure 6 As shown, when the p-type charge generation layer 13 is deposited, the host material includes hole transport material HTM, the doped material includes p-type doped material PD, and the electric field direction of the electric field confinement region is towards the anode 2 (e.g., Figure 6(As indicated by arrow A3 in the image), this not only induces the dipole formed by the hole transport material HTM and the p-type doped material PD to move away from the anode 2, but also induces the built-in electric field of the dipole to tend towards the direction away from the anode 2 (e.g., ...). Figure 6 (As indicated by arrow B3 in the image), the hole transport material HTM in the induced dipole moves closer to the anode 2, while the p-type dopant PD moves further away from the anode 2, thereby increasing the concentration of the dopant material in the formed p-type charge generation layer 13 in the second direction away from the anode 2.

[0101] like Figure 6 As shown, when the electron injection layer 9 or the electron transport layer (such as the first electron transport layer 81 or the second electron transport layer 82 mentioned above) is deposited by vapor deposition, the host material includes the electron transport material ETM, the doping material includes the n-type doping material ND, and the electric field direction of the electric field confinement region is away from the anode 2 (e.g., Figure 6 (As indicated by arrow A4 in the image), this not only induces the dipole formed by the electron transport material ETM and the n-type doped material ND to move away from the anode 2, but also induces the built-in electric field of the dipole to tend towards the anode 2 (e.g., ...). Figure 6 (As indicated by arrow B4 in the image), the electron transport material ETM in the induced dipole moves closer to the anode 2, while the n-type dopant ND moves further away from the anode 2. As a result, in the formed electron injection layer 9 or electron transport layer, the concentration of the dopant material tends to increase in the second direction away from the anode 2.

[0102] The present invention can construct an electric field-defined region corresponding to the anode 2 using conventional methods in the art. For example, a counter electrode is provided, such that one of the anode 2 and the counter electrode is positively charged and the other is negatively charged, so as to form an electric field between the anode 2 and the counter electrode, thereby constructing the electric field-defined region. The substrate 100 to be vapor-deposited includes an array substrate on which the anode 2 is formed. The anode 2 can be positively or negatively charged through the circuitry of the array substrate to construct the electric field.

[0103] Specifically, when anode 2 is positively charged and counter electrode is negatively charged, the direction of the electric field in the electric field-limited region is along the direction from anode 2 to counter electrode (i.e., away from anode 2). When anode 2 is negatively charged and counter electrode is positively charged, the direction of the electric field in the electric field-limited region is along the direction from counter electrode to anode 2 (i.e., toward anode 2).

[0104] Specifically, the counter electrode can be the mask plate 14, or a wall surrounding the chamber, or an electrode arranged in the chamber. When the counter electrode is an electrode arranged in the chamber, the electrode can be located between the substrate 100 to be evaporated and the evaporation source, specifically between the evaporation source and the mask plate 14. The electrode is annular and surrounds the second opening. The material of the second film layer evaporated by the evaporation source is deposited on the substrate 100 to be evaporated through the second opening and the first opening 140 of the mask plate 14, forming the second film layer.

[0105] Of course, the embodiments of the present application are not limited to the way of constructing the electric field by arranging the counter electrode. An alternating magnetic field can also be formed in the chamber, and the electric field is formed by the alternating magnetic field, thereby constructing the electric field confinement region. The embodiments of the present application can form the alternating magnetic field in the chamber by conventional methods in the art, for example, arranging an antenna in the chamber to form the alternating magnetic field.

[0106] In the embodiments of the present application, at least one of the hole injection layer 3, the n-type charge generation layer 12, the p-type charge generation layer 13, the electron injection layer 9, and the electron transport layer (the first electron transport layer 81 or the second electron transport layer 82) is formed by the above preparation process, i.e., constructing the electric field confinement region corresponding to the anode 2, and then evaporating the film layer, so that in the formed organic electroluminescent device, the second film layer includes at least one of the hole injection layer 3, the n-type charge generation layer 12, the p-type charge generation layer 13, the electron injection layer 9, and the electron transport layer (the first electron transport layer 81 or the second electron transport layer 82).

[0107] In addition, the film layers such as the pixel definition layer 11, the hole transport layer, the electron blocking layer, and the hole blocking layer can be formed by conventional methods in the art, for example, by evaporation or wet method (e.g., coating), which are not particularly limited.

[0108] Without particular limitation, the materials of the above layers can be conventional materials in the art, which are not particularly limited. Exemplarily, the material of the anode 2 can be an oxide transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), tin dioxide (SnO2), zinc oxide (ZnO), and any combination thereof. Exemplarily, the material of the cathode 10 can be a metal or an alloy such as magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and any combination thereof.

[0109] The present application provides a display device comprising the organic electroluminescent device. The display device can be specifically a display device such as an OLED display, and any product or component having a display function such as a television, a digital camera, a mobile phone, a tablet computer, etc. comprising the display device. The display device has the same advantages as the organic electroluminescent device relative to the prior art, which will not be described here again.

[0110] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An organic electroluminescent device, characterized by comprising: The organic electroluminescent device comprises an anode, a first film layer and a second film layer, the anode and the first film layer are distributed in a first direction, the first direction is perpendicular to a second direction from the anode or the first film layer to the second film layer, the second film layer comprises a first region corresponding to the anode and a second region corresponding to the first film layer, the second film layer comprises a doping material, the concentration of the doping material in the first region is greater than the concentration of the doping material in the second region; wherein, an electric field defining region corresponding to the anode is constructed on a substrate to be evaporated, the material of the second film layer is deposited on the anode through the electric field defining region to form the first region, the region of the first film layer is a non-electric field defining region without electric field construction, and the material of the second film layer is deposited on the first film layer through the non-electric field defining region to form the second region, so as to induce the doping material to concentrate in the electric field defining region.

2. The organic electroluminescent device according to claim 1, wherein the concentration of the doping material in the second region is 0; or, the second region contains the doping material, and the concentration of the doping material in the second region has an increasing trend along a direction close to the first region.

3. The organic electroluminescent device according to claim 1, wherein The second film layer comprises at least one of a hole injection layer, an n-type charge generation layer, a p-type charge generation layer, an electron injection layer and an electron transport layer.

4. The organic electroluminescent device according to claim 3, wherein the second film layer comprises a hole injection layer and / or an n-type charge generation layer, and in the second direction, the concentration of the doping material in the second film layer has an increasing trend along a direction close to the anode; and / or, the second film layer comprises at least one of an electron injection layer, an electron transport layer and a p-type charge generation layer, and in the second direction, the concentration of the doping material in the second film layer has an increasing trend along a direction away from the anode.

5. The organic electroluminescent device according to any one of claims 1-4, wherein the number of the anodes is multiple, and the first film layer is arranged between every two adjacent anodes; and / or, the first film layer comprises a pixel definition layer.

6. The organic electroluminescent device according to any one of claims 1 to 4, wherein The organic electroluminescent device comprises at least one light emitting unit, wherein each light emitting unit comprises a sub-pixel layer corresponding to the anode; when the number of the light emitting units is multiple, a charge generation layer is arranged between every two adjacent light emitting units, and the charge generation layer comprises an n-type charge generation layer and / or a p-type charge generation layer.

7. The organic electroluminescent device according to any one of claims 1 to 4, wherein The doping material comprises a p-type doping material or an n-type doping material.

8. The organic electroluminescent device according to claim 7, characterized in that The second film layer further comprises a host material, the host material comprises a hole transport material, and the doping material comprises a p-type doping material; or, the host material comprises an electron transport material, and the doping material comprises an n-type doping material.

9. The organic electroluminescent device according to claim 7, characterized in that, The doping material comprises a p-type doping material, and the mass of the p-type doping material is 0.1%-50% of the mass of the second film layer.

10. The organic electroluminescent device according to claim 7, characterized in that, The doping material comprises an n-type doping material, and the mass of the n-type doping material is 10%-90% of the mass of the second film layer.

11. The organic electroluminescent device according to claim 8, wherein The hole-transport material includes one or more of the following compounds HT-1 to HT-34 and PH-47 to PH-86: PH-86 And / or, the p-type doped material comprises one or more of the following compounds HI-1~HI-3: And / or, the electron transport material comprises one or more of the following compounds ET-1~ET-58 and PH-1~PH-46: ET-58 And / or, the n-type doped material comprises one or more of a transition metal, an alkali metal, an alkaline earth metal, a lanthanide metal, an actinide metal, a Group IVA metal of the Periodic Table, an organic compound, an organometallic compound, an alkali metal inorganic salt, an alkali metal organic salt, a halogen salt of an organic radical, a dimer of an organic radical, an organic radical.

12. A method of producing an organic electroluminescent device according to any one of claims 1 to 11, characterized by, Comprising: providing a substrate to be evaporated, the substrate to be evaporated comprising the anode and the first film layer, the anode and the first film layer being distributed in the first direction; constructing an electric field defining region corresponding to the anode, the electric field defining region existing an electric field; evaporating a material of the second film layer on the substrate to be evaporated, forming the second film layer comprising the first region corresponding to the anode and the second region corresponding to the first film layer; wherein the material of the second film layer is deposited on the anode to form the first region through the electric field defining region; the material of the second film layer comprises the doped material.

13. A display device comprising: An organic electroluminescence device according to any one of claims 1-11. An organic electroluminescence device according to any one of claims 1-11.

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