Spin wave device and memory

Abstract

The embodiment of the present application provides a spin wave device and a memory, the spin wave device comprising: a strong spin-orbit coupling material layer, a first magnetic layer, and a spin wave channel layer arranged between the strong spin-orbit coupling material layer and the first magnetic layer; at least one interlayer arranged between the strong spin-orbit coupling material layer and the spin wave channel layer; wherein the strong spin-orbit coupling material layer is driven by a current to generate a spin current, and the first magnetic layer is driven by the current to generate a magnetic moment precession or flip. By arranging the interlayer in the device, the efficiency of the magnetic moment precession or flip is improved, the power consumption of the device is reduced, and the thermal stability of the device is improved.

Description

Technical Field

[0001] This application relates to the field of microelectronic devices, and more specifically, to a spin wave device and a memory. Background Technology

[0002] Traditional electronic devices operate based on the movement of electron charges in semiconductors. High-frequency charge movement generates Joule heating, leading to high power consumption and limiting device operating speed. Spin waves, on the other hand, are collective excited states formed by the in-situ precession of electron spins in magnetic materials. By recording the presence, amplitude, phase, and frequency of spin waves, low-power, high-performance electronic devices can be constructed. Spin wave devices mainly include planar and vertical configurations. The former is typically a nanowire structure, where the spin wave propagates parallel to the thin film plane; the latter is typically a vertical heterojunction structure, where the spin wave propagates perpendicular to the thin film plane. In existing technologies, some vertical heterojunction spin wave devices require external magnetic fields to control spin wave propagation, which is detrimental to device miniaturization and integration; or, while some devices do not require external magnetic field control, their spin wave propagation, driving magnetic moment precession, or flipping efficiency is low, resulting in high power consumption.

[0003] Therefore, a vertical heterojunction spin wave device that can meet the needs of device miniaturization and integration while ensuring low power consumption and thermal stability is urgently needed. Summary of the Invention

[0004] This application provides a spin wave device and a memory. By setting intercalation in the device, the efficiency of spin wave excitation, transmission, driving magnetic moment precession or flipping can be improved, the power consumption of the device can be reduced, and the thermal stability of the device can be improved.

[0005] In a first aspect, a spin wave device is provided, comprising: a strong spin-orbit coupling material layer, a first magnetic layer, and a spin wave channel layer disposed between the strong spin-orbit coupling material layer and the first magnetic layer; at least one intercalation layer disposed between the strong spin-orbit coupling material layer and the spin wave channel layer; wherein the strong spin-orbit coupling material layer generates a spin current driven by an electric current, and the first magnetic layer undergoes magnetic moment precession or flipping driven by the electric current.

[0006] Specifically, when the at least one intercalation layer is disposed between the strong spin-orbit coupling material layer and the spin wave channel layer, the at least one intercalation layer can enhance the spin Hall angle of the strong spin-orbit coupling material layer, increase the magnitude of the spin current generated under the same current, thereby improving the excitation efficiency of the spin wave, and can also reduce the interface scattering of the spin current, thereby improving the spin current penetration rate.

[0007] In some possible implementations, the strong spin wave orbital coupling material layer is driven by an electric current to generate a spin current, which drives the spin wave channel layer to generate and transmit a spin wave, and the spin wave in turn drives the first magnetic layer to undergo magnetic moment precession or flipping.

[0008] The spin wave device provided in this application achieves all-electric actuation through a structure of a strong spin-orbit coupling material layer-spin wave channel layer-magnetic layer. By incorporating intercalation layers in the device, the reversal or precession efficiency of the magnetic moment in the magnetic layer can be improved, reducing power consumption and enhancing the thermal stability of the magnetic layer. Thus, while ensuring low power consumption and thermal stability, the requirements for miniaturization and integration of the device are also met.

[0009] In conjunction with the first aspect, in some implementations of the first aspect, the spin wave device further includes at least one intercalation layer disposed between the spin wave channel layer and the first magnetic layer.

[0010] Specifically, when the at least one intercalation layer is disposed between the spin wave channel layer and the first magnetic layer, the at least one intercalation layer can regulate the magnetic anisotropy of the magnetic layer, enhance the thermal stability of the magnetic layer, and reduce the interface scattering of the spin wave, thereby improving the spin wave transmittance.

[0011] In conjunction with the first aspect, in some implementations of the first aspect, when the at least one intercalation layer includes a first intercalation layer disposed between the strong spin-orbit coupling material layer and the spin wave channel layer and adjacent to the spin wave channel layer, and a second intercalation layer disposed between the spin wave channel layer and the first magnetic layer and adjacent to the spin wave channel layer, a first voltage is applied to the spin wave channel layer through the first intercalation layer and the second intercalation layer.

[0012] Specifically, the first voltage is used to regulate the magnetic anisotropy of the spin wave channel layer, thereby regulating the spin wave transmission efficiency.

[0013] The spin wave device provided in this application improves the transmission efficiency of the spin wave by applying a voltage to both ends of the spin wave channel layer in the device, thereby regulating the magnetic anisotropy of the spin wave channel layer and improving the reversal or precession efficiency of the magnetic moment in the magnetic layer of the device, and reducing the power consumption of the device.

[0014] In conjunction with the first aspect, in some implementations of the first aspect, the range of the first voltage is 0.1-12V.

[0015] In some possible implementations, the first voltage may specifically be 0.5 V, or 0.8 V, or 1 V, or 2 V.

[0016] In conjunction with the first aspect, in some implementations of the first aspect, the spin wave device further includes a second magnetic layer disposed between the strong spin-orbit coupling material layer and the spin wave channel layer, the second magnetic layer being driven by the spin current to undergo magnetic moment precession or flipping.

[0017] Specifically, the magnetic moment in the second magnetic layer flips, which can control the relative orientation of the first and second magnetic layers to achieve the switching of the spin wave; or, the magnetic moment in the second magnetic layer precesses, thereby exciting the spin wave. The generated spin wave is transmitted in the spin wave channel layer. After the spin wave reaches the first magnetic layer, it will drive the magnetic moment in the first magnetic layer to precess or flip.

[0018] In some possible implementations, at least one intercalation layer is provided between the second magnetic layer and the spin wave channel layer, and / or at least one intercalation layer is provided between the strong spin-orbit coupling material layer and the second magnetic layer.

[0019] In the spin wave device provided in this application embodiment, the second magnetic layer can be driven by spin current to undergo magnetic moment reversal or precession, thereby adjusting the magnetic anisotropy of the spin wave channel layer and improving the transmission efficiency of the spin wave.

[0020] In conjunction with the first aspect, in some implementations of the first aspect, the spin wave channel layer further includes a first antiferromagnetic insulating layer, a second antiferromagnetic insulating layer, and a first ferromagnetic layer. The first ferromagnetic layer is disposed between the first antiferromagnetic insulating layer and the second antiferromagnetic insulating layer. The heterogeneous structure formed by the first antiferromagnetic insulating layer, the first ferromagnetic layer, and the second antiferromagnetic insulating layer regulates the magnetically ordered temperature of the spin wave channel layer.

[0021] It should be noted that the material used for the first antiferromagnetic insulating layer can be an antiferromagnetic insulator, specifically NiO, CoO, Cr2O3, α-Fe2O3, BiFeO3, etc., and this application embodiment does not limit this. The material used for the first ferromagnetic layer can be a single-layer or multi-layer composite film of magnetic insulator, magnetic metal, magnetic alloy, etc., wherein the magnetic insulator includes but is not limited to YIG, and the magnetic metal and alloy can be Fe, Co, Ni, CoFeB, NiFe, CoFe, CoPt, CoNi, etc., and multilayer films composed of them, and this application embodiment does not limit this.

[0022] In conjunction with the first aspect, in some implementations of the first aspect, the spin wave channel layer further includes a first antiferromagnetic insulating layer, a first ferromagnetic layer, and a second ferromagnetic layer. The first antiferromagnetic insulating layer is disposed between the first ferromagnetic layer and the second ferromagnetic layer. The heterogeneous structure formed by the first ferromagnetic layer, the first antiferromagnetic insulating layer, and the second ferromagnetic layer regulates the magnetically ordered temperature of the spin wave channel layer.

[0023] In conjunction with the first aspect, in some implementations of the first aspect, the current density of the current supplied to the strongly spin-orbit coupled material layer is in the range of 10. 5 A / cm 2 – 10 8 A / cm 2 .

[0024] In some possible implementations, the current flowing through this strong spin-orbit coupling material layer can specifically be 10. 6 A / cm 2 Or 10 7 A / cm 2 .

[0025] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the first antiferromagnetic insulating layer, the first ferromagnetic layer, and the second antiferromagnetic insulating layer is 0.5–100 nm.

[0026] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the first antiferromagnetic insulating layer, the first ferromagnetic layer, and the second ferromagnetic layer is 0.5–100 nm.

[0027] In some possible implementations, the thickness of each layer in the spin wave channel layer can be 2 nm, or 5 nm, or 10 nm, or 25 nm, or 30 nm, or 50 nm.

[0028] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the at least one intercalation layer is 0.5–100 nm.

[0029] In some possible implementations, the thickness of the at least one intercalation layer can be 1 nm, or 2 nm, or 5 nm, or 6 nm.

[0030] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the first magnetic layer is 1–10 nm.

[0031] In some possible implementations, the thickness of the first magnetic layer can be specifically 3 nm or 6 nm.

[0032] In conjunction with the first aspect, in some implementations of the first aspect, the thickness of the strongly spin-orbit coupled material layer is 0.5–100 nm.

[0033] In some possible implementations, the thickness of the strongly spin-orbit coupled material layer can be 3 nm, 5 nm, 8 nm, or 10 nm.

[0034] In conjunction with the first aspect, in some implementations of the first aspect, the material of the spin wave channel layer is at least one of magnetic insulators, magnetic metals, and magnetic alloys.

[0035] In conjunction with the first aspect, in some implementations of the first aspect, the material of the at least one intercalation layer is a non-magnetic metal.

[0036] In some possible implementations, the aforementioned non-magnetic metal can be titanium (Ti), silver (Ag), hafnium (Hf), molybdenum (Mo), etc., and this application does not limit this.

[0037] In conjunction with the first aspect, in some implementations of the first aspect, the material of the first magnetic layer is at least one of a ferromagnet, a ferrimagnet, and a magnetic insulator.

[0038] In some possible implementations, the ferromagnet can be an alloy of iron (Fe), cobalt (Co), nickel (Ni), cobalt-iron-boron (CoFeB), NiFe, CoFe, CoPt, CoNi, etc., and multilayer films composed of such alloys; the ferrimagnet can be a CoTb, CoGd alloy, or [Co / Tb] alloy. n [Co / Gd] n The magnetic insulator can be a multilayer film, etc., and can be yttrium iron garnet ferrite (YIG), etc. The embodiments of this application do not limit this.

[0039] In conjunction with the first aspect, in some implementations of the first aspect, the material of the strongly spin-orbit coupled material layer is at least one of a heavy metal, a topological insulator, and a Weyl half-metal.

[0040] In some possible implementations, the heavy metal can be platinum (Pt), tungsten (W), tantalum (Ta), or their alloys; the topological insulator and Weyl half-metal can be bismuth selenide (Bi). 1-x Se x Bismuth telluride 1-x Te x Tungsten telluride W 1-x Te x , Molybdenum Telluride 1-x Te x However, the embodiments in this application do not limit this.

[0041] In a second aspect, a spin wave device is provided, comprising: a strong spin-orbit coupling material layer, a first magnetic layer, and a composite spin wave channel layer disposed between the strong spin-orbit coupling material layer and the first magnetic layer; wherein the strong spin-orbit coupling material layer generates a spin current driven by an electric current, and the first magnetic layer undergoes magnetic moment precession or flipping driven by the electric current; the composite spin wave channel layer comprises a heterogeneous structure consisting of a first ferromagnetic layer, a first antiferromagnetic insulating layer, and a second ferromagnetic layer; or, the composite spin wave channel layer comprises a heterogeneous structure consisting of the first antiferromagnetic insulating layer, the first ferromagnetic layer, and the second antiferromagnetic insulating layer; the heterogeneous structure regulates the magnetic order temperature of the composite spin wave channel layer.

[0042] The spin wave device provided in this application achieves all-electric actuation through a structure of a strong spin-orbit coupling material layer, a composite spin wave channel layer, and a magnetic layer. This reduces power consumption, improves thermal stability, and consequently increases the efficiency of magnetic moment reversal or precession in the magnetic layer. Thus, while ensuring low power consumption and thermal stability, it also meets the requirements for miniaturization and integration.

[0043] In conjunction with the second aspect, in some implementations of the second aspect, the spin wave device further includes at least one intercalation layer disposed between the composite spin wave channel layer and the first magnetic layer, wherein the material of the at least one intercalation layer is a non-magnetic metal.

[0044] The spin wave device provided in this application embodiment can adjust the magnetic anisotropy of the magnetic layer and enhance the thermal stability of the magnetic layer by setting at least one intercalation layer between the composite spin wave channel layer and the first magnetic layer. It can also reduce the interface scattering of the spin wave and thus improve the spin wave transmittance.

[0045] Thirdly, a memory is provided, comprising: a memory array for storing data, the memory array including a plurality of interconnected spin wave devices, the spin wave devices being spin wave devices as described in any implementation of the first aspect; and a controller for writing data to the memory array and / or reading data from the memory array.

[0046] The memory provided in this application embodiment can reduce the power consumption required for memory operation and ensure its thermal stability during operation by using a spin wave device with intercalation. Attached Figure Description

[0047] Figure 1 This is a storage device applicable to the spin wave device provided in the embodiments of this application.

[0048] Figure 2 This is a schematic diagram of a storage array.

[0049] Figure 3 and Figure 4 This is an exemplary structural diagram of a vertical heterojunction spin wave device.

[0050] Figure 5 This is an exemplary structural diagram of a spin wave device provided in an embodiment of this application.

[0051] Figure 6 This is an exemplary structural diagram of another spin wave device provided in the embodiments of this application.

[0052] Figure 7 This is an exemplary structural diagram of another spin wave device provided in the embodiments of this application.

[0053] Figure 8 This is an exemplary structural diagram of another spin wave device provided in the embodiments of this application.

[0054] Figure 9 This is an exemplary structural diagram of another spin wave device provided in the embodiments of this application.

[0055] Figure 10 This is an exemplary structural diagram of another spin wave device provided in the embodiments of this application. Detailed Implementation

[0056] To facilitate understanding of the embodiments of this application, the relevant concepts involved in the embodiments of this application will be briefly introduced first:

[0057] Spin waves are collective excitations of electron spin precession in magnetic systems. Quasi-particles quantized from spin waves are called magnons. Novel spintronic devices using spin waves as information carriers possess significant advantages, such as the ability to transmit and process information over long distances without relying on conductive electrons. They are considered a new device technology for the post-Moore's Law era, potentially solving the Joule heating problem in electronic devices and playing a crucial role in lower-power, non-volatile, high-speed information storage and logic operations. Spin wave devices offer the following advantages: 1) Spin waves can propagate in magnetic insulators; 2) They can propagate spin information over longer distances; 3) Spin waves can possess eigenfrequencys up to terahertz and simultaneously exhibit wave-like characteristics in both amplitude and phase. These advantages have attracted widespread exploration of novel effects and device applications related to spin waves, such as spin-wave transistors, spin-wave logic gates, and terahertz high-frequency oscillators.

[0058] Spin flow: The spin flow formed by the spins of electrons in directional coherent motion. That is, suppose that electrons with spin up and electrons with spin down move in opposite directions with the same average velocity. The absolute values ​​of the two flows are equal and the directions are opposite. Therefore, there is no net charge flow, only spin flow.

[0059] Spin-orbit torque: Current flowing into a strongly spin-orbit coupled material (usually a heavy metal such as platinum (Pt), tungsten (W), or tantalum (Ta)) will accumulate spin current on the surface. This spin current will exert a spin-orbit torque on the magnetic moment of the magnetic layer adjacent to the strongly spin-orbit coupled material, causing the magnetic moment to precess or flip. When the magnetic moment precesses, it can continuously emit spin waves outward.

[0060] The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings.

[0061] Combination Figure 1 This application describes in detail the storage devices to which the spin wave devices provided in the embodiments are applicable. Figure 1 A schematic diagram of a heterojunction spin wave-compatible storage device 100 provided in an embodiment of this application is shown. See also Figure 1 The storage device includes a controller, such as Figure 1 The controller 110 shown; the storage device 100 also includes a storage array, such as Figure 1 The storage array 120 is shown. The controller 110 and the storage array 120 can communicate with each other. For example, the controller 110 can write data to the storage array 120, and for another example, the controller 110 can read data from the storage array 120.

[0062] The controller 110 may include a row decoder, an amplifier, a column decoder, and other control circuits, thereby the controller 110 can control the read and write operations and other operations of the storage array 120.

[0063] Storage array 120 may include at least one spin wave device. Figure 2 A schematic diagram of a memory array is shown, in which each spin wave device is used as a memory cell and connected in series with a transistor to form a 1T1R structure. The current through the strongly spin-orbit coupled material layer of the spin wave device is controlled by adjusting the current limit of the transistor. Figure 2 The storage array shown includes M×N 1T1R devices, each of which can be used to store data. Figure 2 The diagram shows N bit line pairs (each bit line pair consists of one bit line and one source line) and M word lines, where M and N are positive integers. Each row of N 1T1R devices is connected to a word line, and each column of M 1T1R devices is connected in parallel between a bit line and a source line.

[0064] exist Figure 2In the diagram, the structure between bit line 0, source line 0, and word line 0 is a 1T1R structure consisting of a spin wave device A and a transistor. Each transistor has its source connected to a source line, its gate connected to a word line, and its drain connected to a bit line. A spin wave device is connected in series between the drain and the bit line of each transistor. It should be noted that the spin wave device can be connected between the drain and the bit line of the transistor, or between the source and the source line of the transistor; this embodiment does not limit this connection. When a voltage is applied to the word line, the magnitude of the applied voltage controls the current between the source and drain of the transistor, thereby controlling the conduction or deactivation of the spin current transport in the spin wave device, thus enabling data writing.

[0065] It should be understood that Figure 1 and Figure 2 This application is for illustrative purposes only and is not limited thereto. For example, Figure 2 The device composed of transistors and spin-wave devices in the shown memory array can also be a 2T1R device. It should be understood that all memory devices including the spin-wave devices described in the embodiments of this application are within the protection scope of the embodiments of this application.

[0066] As mentioned earlier, spin wave devices mainly include planar and vertical configurations. The former is typically a nanowire structure, where the spin wave propagates parallel to the thin film plane; the latter is typically a vertical heterojunction structure, where the spin wave propagates perpendicular to the thin film plane. The spin wave devices involved in the embodiments of this application all belong to the latter.

[0067] Existing vertical spin wave devices generally fall into two categories. The basic structure of the first type includes a magnetic layer a, an intermediate layer, and a magnetic layer b, or magnetic layers a and b coupled together, such as... Figure 3 As shown. The magnetic layer material is generally a ferromagnetic conductor or a ferromagnetic insulator. Its working principle is as follows: spin waves are excited in magnetic layers a and b and propagate in the perpendicular direction. When the magnetic moments of magnetic layers a and b are parallel or antiparallel, the two spin waves superimpose or cancel each other out. Ultimately, the magnitudes of the spin waves detected on the upper side of magnetic layer a (or the lower side of magnetic layer b) are different, thus achieving the conduction or deactivation of the spin wave transmission, representing the two logic states "1" and "0". The basic structure of the second type of device includes a strong spin-orbit coupling material layer, a spin wave channel layer, and magnetic layer a, as shown... Figure 4As shown in the diagram. The strong spin-orbit coupling material is generally a material with high current-to-spin current conversion efficiency, such as Pt, Ta, W, and topological insulators; the spin wave channel layer material is generally an antiferromagnetic insulator. Its working principle is as follows: a current is passed through the strong spin-orbit coupling material layer, and through the spin-orbit coupling effect, the current is converted into a spin current. The spin current excites a spin wave in the spin wave channel layer and propagates in the vertical direction. The spin wave reaches the magnetic layer a, which can drive the magnetic moment precession or flipping. The state of the spin wave device can be obtained by measuring the magnetic moment of the magnetic layer. However, the first type of heterojunction spin device requires an external magnetic field to control the propagation of the spin wave, which is not conducive to device miniaturization and integration; the second type of heterojunction spin device has low efficiency in spin wave propagation, driving magnetic moment precession or flipping, resulting in high power consumption.

[0068] In view of this, embodiments of this application provide a spin wave device and a memory that can achieve fully electrical control of magnetic moment reversal, thereby realizing device miniaturization and integration. Furthermore, by setting intercalation, the transmittance of spin current and / or spin wave can be improved, thereby enhancing the efficiency of spin wave excitation, transmission, driving magnetic moment precession or reversal, reducing device power consumption, and enhancing the thermal stability of the device.

[0069] Specifically, Figures 5 to 9 Several schematic structural diagrams of spin wave devices according to embodiments of this application are shown. The following will be combined with... Figures 5 to 9 This application provides a detailed description of the structure and control method of the spin wave device provided in the embodiments.

[0070] See Figure 5 The spin wave device includes:

[0071] A strong spin-orbit coupling material layer 111 is disposed on the first surface of the substrate 200, which can be the upper surface of the substrate 200;

[0072] The first intercalation layer 101 is disposed above the strong spin-orbit coupling material layer 111;

[0073] Spin wave channel layer 104 is disposed above the first intercalation layer 101;

[0074] The first magnetic layer 106 is disposed above the spin wave channel layer 104.

[0075] The following sections will provide detailed explanations of each of the above parts.

[0076] 1. Substrate

[0077] As an example and not a limitation, the substrate can be plate-shaped, cuboid, or cube-shaped.

[0078] In one possible implementation, the substrate can be a semiconductor material, such as silicon (Si), silicon oxide (SiO), sapphire, silicon carbide (SiC), or gallium nitride (GaN).

[0079] 2. Strong spin-orbit coupling material layer

[0080] This strongly spin-orbit coupling material layer can generate a spin current when driven by an electric current. Optionally, the thickness of this strongly spin-orbit coupling material layer can be 0.5–100 nm, and in some possible implementations, the layer thickness can specifically be 3 nm, 5 nm, 8 nm, or 10 nm; the materials used in this layer include, but are not limited to, heavy metals such as platinum (Pt), tungsten (W), tantalum (Ta), and their alloys; the materials used in this layer can also be topological insulators or Weyl half-metals, such as bismuth selenide (Bi). 1-x Se x Bismuth telluride 1- x Te x Tungsten telluride W 1-x Te x , Molybdenum Telluride 1-x Te x wait.

[0081] Optionally, the current density of the current passed through the strong spin-orbit coupling material layer is 10. 5 A / cm 2 – 10 8 A / cm 2 .

[0082] 3. Intercalation

[0083] When the intercalation layer is placed above the strong spin-orbit coupling material layer 111, the intercalation layer can enhance the spin Hall angle of the strong spin-orbit coupling material layer, increase the magnitude of the spin current generated under the same current, thereby improving the excitation efficiency of the spin wave, and also reduce the interface scattering of the spin current and improve the spin current penetration rate.

[0084] Optionally, the intercalation thickness can be 0.5–100 nm, and in some possible implementations, the intercalation thickness can be 1 nm, 2 nm, 5 nm, or 6 nm; the material used for the layer includes, but is not limited to, non-magnetic metals such as titanium (Ti), silver (Ag), hafnium (Hf), molybdenum (Mo), etc.

[0085] Alternatively, this intercalation layer can be introduced through interface engineering.

[0086] 4. Spin wave channel layer

[0087] The spin wave channel layer can generate spin waves when excited by spin current, and the generated spin waves are transmitted to the magnetic layer. Optionally, the thickness of the spin wave channel layer can be 0.5–100 nm, and in some possible implementations, the layer thickness can be 2 nm, 5 nm, 10 nm, 25 nm, 30 nm, or 50 nm; the material of the spin wave channel layer can be an antiferromagnetic insulator, including but not limited to NiO, CoO, Cr2O3, α-Fe2O3, and BiFeO3.

[0088] 5. Magnetic layer

[0089] The magnetic moments of this magnetic layer can undergo flipping or precession due to spin wave drive. The magnetic moments of this magnetic layer can be arranged perpendicularly or in-plane.

[0090] Optionally, the thickness of the magnetic layer can be 1–10 nm, and in some possible implementations, the thickness can specifically be 3 nm or 6 nm; the materials used for this layer include, but are not limited to, ferromagnetic thin films, such as alloys of iron (Fe), cobalt (Co), nickel (Ni), cobalt-iron-boron (CoFeB), NiFe, CoFe, CoPt, CoNi, and multilayer films composed thereof; and subferromagnetic thin films, such as CoTb, CoGd alloys, and [Co / Tb] alloys. n [Co / Gd] n Multilayer films, etc.; magnetic insulators, such as yttrium iron garnet ferrite (YIG), etc.

[0091] In some possible implementations, the above layers can be cylindrical with a diameter of 0.005-20 μm; they can also be elliptical cylindrical with a major axis length of 0.005-20 μm, a minor axis length of 0.005-10 μm, and a major-minor axis ratio of 1.0-5.0; or they can be rectangular with a long side length of 0.005-20 μm, a short side length of 0.005-10 μm, and a major-minor axis ratio of 1.0-5.0. The embodiments of this application do not limit this.

[0092] It should be understood that the working principle of the spin wave device in the embodiments of this application is as follows: a current density in the range of 10 is applied to the strong spin-orbit coupling material layer 111 of the spin wave device. 5 A / cm 2 – 10 8 A / cm 2 The current. Due to the spin-orbit coupling effect, this current will cause a spin current to be generated on the surface of the strong spin-orbit coupling material layer 111, which will then excite the spin wave channel layer 104 to generate a spin wave and transmit it. After the spin wave reaches the first magnetic layer 106, it will drive the magnetic moment in the first magnetic layer 106 to precess or flip.

[0093] The spin wave device provided in this application, by incorporating a first intercalation layer 101 and / or a second intercalation layer 105, can improve the reversal or precession efficiency of the magnetic moment in the magnetic layer of the device, reduce device power consumption, and improve the thermal stability of the magnetic layer. Thus, while ensuring low power consumption and thermal stability, it also meets the requirements for device miniaturization and integration.

[0094] This application provides an embodiment of a spin wave device that can, as follows: Figure 6 As shown, a strong spin-orbit coupling material layer 111, a first intercalation layer 101, a spin wave channel layer 104, a second intercalation layer 105, and a first magnetic layer 106 are sequentially disposed on the first surface of the substrate 200. It should be understood that... Figure 6 The function of the first intercalation layer 101 in the device shown is related to its role in Figure 5 The second intercalation layer 105, adjacent to the magnetic layer, functions similarly to the device shown. It can modulate the magnetic anisotropy of the magnetic layer, enhance its thermal stability, and reduce interface scattering of the spin wave, thereby improving its transmission efficiency. In some possible implementations, the first intercalation layer 101 and the second intercalation layer 105 can be used as electrodes to apply a voltage ranging from 0.1V to 12V across the spin wave channel layer 104, thereby modulating the magnetic anisotropy of the spin wave channel layer 104 and thus controlling the spin wave transmission efficiency. Specifically, the voltage applied across the spin wave channel layer 104 can be 0.5V, 0.8V, 1V, or 2V.

[0095] The spin wave device provided in this application improves the transmission efficiency of the spin wave by applying a voltage to both ends of the spin wave channel layer in the device, thereby regulating the magnetic anisotropy of the spin wave channel layer and improving the reversal or precession efficiency of the magnetic moment in the magnetic layer of the device, and reducing the power consumption of the device.

[0096] In some possible implementations, it is also possible to Figure 6 The spin wave channel layer 104 in the middle is set as Figure 7 The composite spin wave channel layer 1041 is described above. Optionally, the composite spin wave channel layer 1041 can be as follows: Figure 7 As shown in (a), it includes a first antiferromagnetic insulating layer 204, a first ferromagnetic layer 205, and a second antiferromagnetic insulating layer 206, wherein the first ferromagnetic layer 205 is disposed between the first antiferromagnetic insulating layer 204 and the second antiferromagnetic insulating layer 206; or, the composite spin wave channel layer 1041 can be as follows: Figure 7As shown in (b), the composite spin wave channel layer 1041 includes a first ferromagnetic layer 205, a first antiferromagnetic insulating layer 204, and a second ferromagnetic layer 203, wherein the first antiferromagnetic insulating layer 204 is disposed between the first ferromagnetic layer 205 and the second ferromagnetic layer 203. The heterogeneous structure of this composite spin wave channel layer 1041, consisting of an antiferromagnetic insulating layer / ferromagnetic layer / antiferromagnetic insulating layer or a ferromagnetic layer / antiferromagnetic insulating layer / ferromagnetic layer, is used to adjust the magnetic ordering temperature of the composite spin wave channel layer 1041.

[0097] Optionally, the thickness of each layer in the heterostructure of the composite spin wave channel layer 1041 can be 0.5–100 nm. In some possible implementations, the thickness of each layer in the heterostructure can specifically be 2 nm, 5 nm, 10 nm, 25 nm, 30 nm, or 50 nm. In the composite spin wave channel layer 1041, the ferromagnetic layer material can be a single-layer or multi-layer composite film of magnetic insulators, magnetic metals, magnetic alloys, etc., wherein the magnetic insulators include, but are not limited to, YIG, and the magnetic metals and alloys include, but are not limited to, Fe, Co, Ni, CoFeB, NiFe, CoFe, CoPt, CoNi, etc., and multilayer films composed of them; the antiferromagnetic insulating layer material can be an antiferromagnetic insulator, including, but not limited to, NiO, CoO, Cr2O3, α-Fe2O3, BiFeO3.

[0098] In some possible implementations, Figure 7 In the device shown, the first intercalation layer 101 and the second intercalation layer 105 can be used as electrodes to apply a voltage ranging from 0.1V to 12V across the composite spin wave channel layer 1041, thereby controlling the magnetic anisotropy of the composite spin wave channel layer 1041 and thus controlling the spin wave transmission efficiency. In some possible implementations, the voltage applied across the composite spin wave channel layer 1041 can specifically be 0.5V, 0.8V, 1V, or 2V.

[0099] It should be noted that, Figure 5 In the device shown, the spin wave channel layer 104 can also be configured as a composite spin wave channel layer 1041. Through the heterogeneous structure of the composite spin wave channel layer 1041, the magnetic order temperature can be adjusted, thereby improving the thermal stability of the device.

[0100] The spin wave device provided in this application improves the thermal stability of the device by setting a composite spin wave channel layer in the device and regulating the magnetic order stability of the composite spin wave channel layer, thereby ensuring the efficiency of magnetic moment reversal or precession in the magnetic layer of the device.

[0101] This application provides a spin wave device, in... Figure 7Based on the device shown in (a), a second magnetic layer 102 and a third intercalation layer 103 are sequentially disposed between the first intercalation layer 101 and the composite spin wave channel layer 1041, as detailed below. Figure 8 As shown, the spin current generated by the spin-orbit coupling material layer 111, upon reaching the second magnetic layer 102, will: drive the magnetic moments in the second magnetic layer 102 to flip, thereby controlling the relative orientation of the first magnetic layer 106 and the second magnetic layer 102 to achieve the switching of the spin wave; it can also drive the magnetic moments in the second magnetic layer 102 to precess, thereby exciting the spin wave. The generated spin wave propagates in the composite spin wave channel layer 1041. After the spin wave reaches the first magnetic layer 106, it will drive the magnetic moments in the first magnetic layer 106 to precess or flip. The introduction of the third intercalation layer 103 can further improve the spin wave transmittance, thereby improving the efficiency of magnetic moment flipping or precession in the first magnetic layer of the device, and further reducing the power consumption of the device.

[0102] It should be understood that Figure 8 In the spin wave device shown, the composite spin wave channel layer 1041 between the second intercalation layer 105 and the third intercalation layer 103 can also be configured as the spin wave channel layer 104 in the above embodiment.

[0103] Among some possible implementations, Figure 8The structure of the spin wave device shown can also be: a strong spin-orbit coupling material layer 111, a second magnetic layer 102, a spin wave channel layer 104, and a first magnetic layer 106, sequentially disposed on the first surface of the substrate 200; or, a strong spin-orbit coupling material layer 111, a first intercalation layer 101, a second magnetic layer 102, a spin wave channel layer 104, and a first magnetic layer 106, sequentially disposed on the first surface of the substrate 200; or, a strong spin-orbit coupling material layer 111, a second magnetic layer 102, a third intercalation layer 103, a spin wave channel layer 104, and a first magnetic layer 106, sequentially disposed on the first surface of the substrate 200; or, a strong spin-orbit coupling material layer 111, a first intercalation layer 10 .... A first magnetic layer 106 is sequentially disposed on a first surface of the substrate 200; alternatively, a strong spin-orbit coupling material layer 111, a first intercalation layer 101, a second magnetic layer 102, a spin wave channel layer 104, a second intercalation layer 105, and a first magnetic layer 106 are sequentially disposed on the first surface of the substrate 200; alternatively, a strong spin-orbit coupling material layer 111, a second magnetic layer 102, a third intercalation layer 103, a spin wave channel layer 104, a second intercalation layer 105, and a first magnetic layer 106 are sequentially disposed on the first surface of the substrate 200; alternatively, a strong spin-orbit coupling material layer 111, a first intercalation layer 101, a second magnetic layer 102, a third intercalation layer 103, a spin wave channel layer 104, a second intercalation layer 105, and a first magnetic layer 106 are sequentially disposed on the first surface of the substrate 200. It should be understood that in each of the above-mentioned spin wave devices, the spin wave channel layer 104 can also be configured as a composite spin wave channel layer 1041, and this embodiment does not limit this.

[0104] This application also provides a spin wave device, such as... Figure 9 As shown, a strong spin-orbit coupling material layer 111, a composite spin wave channel layer 1041, and a first magnetic layer 106 are sequentially disposed on the first surface of the substrate 200.

[0105] In some possible implementations, such as Figure 10 As shown, the spin wave device may further include a second intercalation layer 105 disposed between the composite spin wave channel layer 1041 and the first magnetic layer 106. The second intercalation layer can modulate the magnetic anisotropy of the magnetic layer, enhance the thermal stability of the magnetic layer, and reduce the interface scattering of the spin wave, thereby improving the spin wave transmittance.

[0106] The spin wave device provided in this application achieves all-electric actuation through a structure of a strong spin-orbit coupling material layer, a composite spin wave channel layer, and a magnetic layer. This also improves the efficiency of magnetic moment reversal or precession in the magnetic layer and the thermal stability of the device. Thus, while ensuring low power consumption and thermal stability, it also meets the requirements for miniaturization and integration.

[0107] The spin wave device provided in this application improves the thermal stability of the device by setting a composite spin wave channel layer in the device and regulating the magnetic order stability of the composite spin wave channel layer.

[0108] In some possible implementations, it is possible to Figures 5 to 9 An electrode layer is disposed above the first magnetic layer 106 of any of the spin wave devices shown. A voltage is applied to both sides of the electrode layer, and the magnitude of the current within the electrode layer is detected. Since the current in the electrode layer will be affected by the spin wave in the first magnetic layer 106, the magnitude of the detected current can be used to determine whether the spin wave transmission is in a conducting or closed state, thus representing the "1" and "0" logic states of the spin wave device. Optionally, the electrode material includes, but is not limited to, highly conductive metals such as platinum (Pt) and gold (Au).

[0109] In this application, expressions such as "the item includes one or more of the following: A, B, and C" generally mean, unless otherwise specified, that the item can be any one of the following: A; B; C; A and B; A and C; B and C; A, B and C; A and A; A, A and A; A, A and B; A, A and C, A, B and B; A, C and C; B and B, B, B and B, B, B and C, C and C; C, C and C, and other combinations of A, B, and C. The above example uses three elements, A, B, and C, to illustrate the possible entries for the item. When expressed as "the item includes at least one of the following: A, B, ..., and X," that is, when the expression contains more elements, then the applicable entries for the item can also be obtained according to the aforementioned rules.

[0110] It should be understood that the various numerical designations used in the embodiments of this application are merely for descriptive convenience and are not intended to limit the scope of the embodiments of this application. The order of the process numbers does not imply the order of execution; the execution order of each process should be determined by its function and internal logic. In particular, the descriptions of intercalation layers 1, 2, 3, etc., in the embodiments of this application are only for distinguishing the position of each layer in the device; their material, thickness, and other parameters are not significantly different.

[0111] It should be understood that the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0112] It should be understood that in the embodiments of this application, the designations "first", "second", etc. are only for distinguishing different objects, such as different intercalation layers, and do not constitute a limitation on the scope of the embodiments of this application. The embodiments of this application are not limited thereto.

[0113] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A spin wave device, characterized by, The spin wave device comprises: a strong spin-orbit coupling material layer (111), a first magnetic layer (106), and a spin wave channel layer (104) disposed between the strong spin-orbit coupling material layer (111) and the first magnetic layer (106); at least one interlayer disposed between the strong spin-orbit coupling material layer (111) and the spin wave channel layer (104), and / or disposed between the spin wave channel layer (104) and the first magnetic layer (106); when the at least one interlayer comprises a first interlayer (101) disposed between the strong spin-orbit coupling material layer (111) and the spin wave channel layer (104) and adjacent to the spin wave channel layer (104), and a second interlayer (105) disposed between the spin wave channel layer (104) and the first magnetic layer (106) and adjacent to the spin wave channel layer (104), the spin wave channel layer (104) is applied with a first voltage through the first interlayer (101) and the second interlayer (105); wherein the strong spin-orbit coupling material layer (111) is driven by a current to generate a spin current, and the first magnetic layer (106) is driven by the current to generate a magnetic moment precession or flip.

2. The spin wave device of claim 1, wherein, The spin wave device further comprises the at least one interlayer disposed between the spin wave channel layer (104) and the first magnetic layer (106).

3. The spin wave device of claim 1, wherein, The first voltage ranges from 0.1 V to 12 V.

4. The spin wave device according to any one of claims 1 to 3, characterized in that, The spin wave device further comprises a second magnetic layer (102) disposed between the strong spin-orbit coupling material layer (111) and the spin wave channel layer (104), and the second magnetic layer (102) is driven by a spin current to generate a magnetic moment precession or flip.

5. The spin wave device according to any one of claims 1 to 3, characterized in that, The spin wave channel layer (104) comprises a first antiferromagnetic insulating layer (204), a second antiferromagnetic insulating layer (206), and a first ferromagnetic layer (205) disposed between the first antiferromagnetic insulating layer (204) and the second antiferromagnetic insulating layer (206), and a heterostructure composed of the first antiferromagnetic insulating layer (204), the first ferromagnetic layer (205), and the second antiferromagnetic insulating layer (206) adjusts a magnetic ordering temperature of the spin wave channel layer (104).

6. The spin wave device according to any one of claims 1 to 3, characterized in that, The spin wave channel layer (104) comprises a first antiferromagnetic insulating layer (204), a first ferromagnetic layer (205), and a second ferromagnetic layer (203), the first antiferromagnetic insulating layer (204) is disposed between the first ferromagnetic layer (205) and the second ferromagnetic layer (203), and a heterostructure composed of the first ferromagnetic layer (205), the first antiferromagnetic insulating layer (204), and the second ferromagnetic layer (203) adjusts a magnetic ordering temperature of the spin wave channel layer (104).

7. The spin wave device according to any one of claims 1 to 3, characterized in that, The current density of the current passed through the strong spin-orbit coupling material layer (111) ranges from 10 5 A / cm 2 – 10 8 A / cm 2 .

8. The spin wave device of claim 5, wherein, The thickness of the first antiferromagnetic insulating layer (204), the first ferromagnetic layer (205), and the second antiferromagnetic insulating layer (206) ranges from 0.5 nm to 100 nm.

9. The spin wave device of claim 6, wherein, The first antiferromagnetic insulating layer (204), the first ferromagnetic layer (205) and the second ferromagnetic layer (203) have a thickness of 0.5-100 nm.

10. The spin wave device according to any one of claims 1 to 3, characterized in that, The at least one interlayer has a thickness of 0.5-100 nm.

11. The spin wave device according to any one of claims 1 to 3, characterized in that, The first magnetic layer (106) has a thickness of 1-10 nm.

12. The spin wave device of any one of claims 1 to 3, wherein, The strong spin-orbit coupling material layer (111) has a thickness of 0.5-100 nm.

13. The spin wave device of any one of claims 1 to 3, wherein, The spin wave channel layer (104) is made of at least one of a magnetic insulator, a magnetic metal and a magnetic alloy.

14. The spin wave device of any one of claims 1 to 3, wherein, The at least one interlayer is made of a non-magnetic metal.

15. The spin wave device of any one of claims 1 to 3, wherein, The first magnetic layer (106) is made of at least one of a ferromagnet, a ferrimagnet and a magnetic insulator.

16. The spin wave device of any one of claims 1 to 3, wherein, The strong spin-orbit coupling material layer (111) is made of at least one of a heavy metal, a topological insulator and a Weyl semimetal.

17. A spin wave device, characterized by The spin wave device comprises: a strong spin-orbit coupling material layer (111), a first magnetic layer (106), and a composite spin wave channel layer (1041) disposed between the strong spin-orbit coupling material layer (111) and the first magnetic layer (106); wherein the strong spin-orbit coupling material layer (111) is driven by a current to generate a spin current, and the first magnetic layer (106) is driven by the current to undergo magnetic moment precession or flip; the composite spin wave channel layer (1041) comprises a heterostructure composed of a first ferromagnetic layer (205), a first antiferromagnetic insulating layer (204) and a second ferromagnetic layer (203); or, the composite spin wave channel layer (1041) comprises a heterostructure composed of the first antiferromagnetic insulating layer (204), the first ferromagnetic layer (205) and a second antiferromagnetic insulating layer (206); the heterostructure is used to adjust the magnetic ordering temperature of the composite spin wave channel layer (1041).

18. The spin wave device of claim 17, wherein, The spin wave device further comprises at least one interlayer disposed between the composite spin wave channel layer (1041) and the first magnetic layer (106), and the at least one interlayer is made of a non-magnetic metal.

19. A memory, comprising: The memory comprises: a storage array for storing data, the storage array comprising a plurality of spin wave devices connected in series, the spin wave device being the spin wave device as claimed in any one of claims 1-18; a controller for writing data into the storage array and / or for reading data from the storage array.

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