Lumped parameter topology for implementing fourth order generalized chebyshev bandpass frequency response

Abstract

The application provides a kind of lumped parameter topology for realizing four-order generalized Chebyshev band-pass frequency response, which is specifically represented as two kinds of structures of GCL and GCB.The generalized Chebyshev band-pass frequency response includes two kinds of double-sided generalized Chebyshev band-pass frequency response and single-sided generalized Chebyshev band-pass frequency response.The response is characterized in that the response amplitude in the passband is equal ripple fluctuation, has four transmission poles, and three transmission zeros can be flexibly placed at limited frequencies, which are any positive frequencies except zero frequency and infinite frequency.The GCL structure is used to realize the double-sided generalized Chebyshev band-pass frequency response, and the GCB structure is used to realize the single-sided generalized Chebyshev band-pass frequency response.The application effectively overcomes the limitations of the prior art, and realizes more complex frequency response by flexibly setting transmission zeros.

Description

Technical Field

[0001] This invention belongs to the field of communication technology, specifically relating to a lumped parameter topology for realizing a fourth-order generalized Chebyshev bandpass frequency response. Background Technology

[0002] Spectrum resources are always finite, and the continuous emergence of wireless application technologies is putting increasing pressure on spectrum allocation. Filters, as crucial components in spectrum allocation, function to allow signals at certain frequencies to pass smoothly while significantly suppressing signals at other frequencies; their performance has a significant impact on the overall system performance. Filter specifications include passband bandwidth, insertion loss, passband ripple, return loss, stopband rejection, in-band phase linearity, and group delay. Due to the limited frequency resources, more and more application frequency bands are very close together, requiring filters to achieve more complex frequency responses to meet increasingly demanding technical requirements. Theoretically, a filter's frequency response should ideally have low insertion loss in the passband and flexible placement of transmission zeros in the stopband to improve frequency selectivity or out-of-band rejection, thus achieving a complex frequency response. While elliptic function filtering has transmission zeros located at finite frequencies, these cannot be flexibly moved. The characteristics of generalized Chebyshev filtering frequency response are: the frequency response amplitude in the passband exhibits uniform ripple; theoretically, the transmission zeros in the stopband can be flexibly placed at finite frequencies, and so on. However, existing technologies struggle to achieve a generalized Chebyshev filter frequency response where the transmission zero can be flexibly placed. Summary of the Invention

[0003] Existing technologies, based on the low-pass prototype concept, have limitations and cannot easily achieve a generalized Chebyshev bandpass frequency response with flexible placement of transmission zeros using lumped parameter topologies. The purpose of this invention is to overcome these limitations and provide a lumped parameter topology for realizing a fourth-order generalized Chebyshev bandpass frequency response. This response has four transmission poles; the response amplitude within the passband exhibits uniform ripple; and three transmission zeros can be flexibly placed at finite frequencies outside the passband.

[0004] Note that for the accompanying drawings, the component numbers in each drawing are used to distinguish the connection relationships of the components in that drawing.

[0005] like Figure 1 The diagram shows the lumped-parameter topology described in this invention, used to realize a fourth-order generalized Chebyshev bandpass frequency response. Its key feature is: an admittance inverter J... 12 Resonator R2, Admittance Inverter J 23 Resonator R3 and admittance inverter J 34 Cascaded sequentially to form the upper branch two-port network; resonator R1, admittance inverter J 14The resonator R4 is cascaded in turn to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form an intermediate two-port network; the left port of the admittance inverter J S is connected to the left port of the intermediate two-port network, and the right port of the admittance inverter J S is cascaded with the left port of the intermediate two-port network; the right port of the intermediate two-port network is cascaded with the left port of the admittance inverter J L , and the right port of the admittance inverter J L is connected to the load end Load; the admittance of the source end Source is Gs, and the admittance of the load end Load is G L .

[0006] Further, the lumped parameter topology of the present application uses three kinds of lumped parameter elements, namely capacitive elements, inductive elements and conductive elements. The capacitive element has an admittance represented as jωC, where j is the imaginary unit, ω is the angular frequency, and C is the capacitance value, referred to as the capacitor C. The inductive element has two implementation forms: the first type of inductive element has an admittance represented as , which is related to the frequency, where L is the inductance value, referred to as the inductor L; the second type of inductive element has an admittance represented as jB, where B is the inductance independent of the frequency, referred to as the inductor jB. The conductive element has an admittance represented as G, which is independent of the frequency and is a real number; referred to as the conductance G.

[0007] Further, the resonator used in the present application is formed by a capacitive element and an inductive element connected in parallel, and has two implementation forms: the first type of resonator is formed by a capacitor C and an inductor L connected in parallel, referred to as a CL resonator, as shown in Figure 2 ; the second type of resonator is formed by a capacitor C and an inductor jB connected in parallel, referred to as a CB resonator, as shown in Figure 3 .

[0008] Further, the admittance inverters J S , J L are formed by conductive elements, and the topology form is as shown in Figure 4 , referred to as a G admittance inverter. The feature is that: the conductance G1 forms a first parallel admittance two-port network, the conductance G2 forms a series impedance two-port network, and the conductance G3 forms a second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network and the second parallel admittance two-port network are cascaded in turn to form the G admittance inverter; there is a constraint relationship between the conductance values of the conductance G1, the conductance G2 and the conductance G3: G2=-G1=-G3.

[0009] Further, the admittance inverters J 12 , J 14 , J 23 and J34 There are two types of implementation forms. The first type of admittance inverter is shown in Fig. 1, where capacitor Cl and inductor LI are connected in parallel to form a first parallel admittance two-port network; capacitor C2 and inductor L2 are connected in series to form a series impedance two-port network; capacitor C3 and inductor L3 are connected in parallel to form a second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network, and the second parallel admittance two-port network are connected in series; this type of admittance inverter is called a CL admittance inverter. There is a constraint relationship between the values of the elements in the CL admittance inverter: C2 = -Cl = -C3 and L2 = -LI = -L3. If all the capacitors C and inductors L in the CL admittance inverter are retained, it is also called a hybrid coupled CL admittance inverter; if all the inductors L in the CL admittance inverter are open, only the capacitors C are retained, it is called an electrically coupled C admittance inverter; if all the capacitors C in the hybrid coupled CL admittance inverter are open, only the inductors L are retained, it is called a magnetically coupled L admittance inverter. Figure 5 The second type of admittance inverter is shown in Fig. 2, where capacitor Cl and inductor jBl are connected in parallel to form a first parallel admittance two-port network; capacitor C2 and inductor jB2 are connected in series to form a series impedance two-port network; capacitor C3 and inductor jB3 are connected in parallel to form a second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network, and the second parallel admittance two-port network are connected in series; this type of admittance inverter is called a CB admittance inverter. There is a constraint relationship between the values of the elements in the CB admittance inverter: C2 = -Cl = -C3 and B2 = -Bl = -B3. If all the capacitors C and inductors jB in the CB admittance inverter are retained, it is also called a hybrid coupled CB admittance inverter; if all the inductors jB in the CB admittance inverter are open, only the capacitors C are retained, it is called an electrically coupled C admittance inverter; if all the capacitors C in the hybrid coupled CB admittance inverter are open, only the inductors jB are retained, it is called a magnetically coupled jB admittance inverter. Figure 6 The second type of admittance inverter is shown in Fig. 2, where capacitor Cl and inductor jBl are connected in parallel to form a first parallel admittance two-port network; capacitor C2 and inductor jB2 are connected in series to form a series impedance two-port network; capacitor C3 and inductor jB3 are connected in parallel to form a second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network, and the second parallel admittance two-port network are connected in series; this type of admittance inverter is called a CB admittance inverter. There is a constraint relationship between the values of the elements in the CB admittance inverter: C2 = -Cl = -C3 and B2 = -Bl = -B3. If all the capacitors C and inductors jB in the CB admittance inverter are retained, it is also called a hybrid coupled CB admittance inverter; if all the inductors jB in the CB admittance inverter are open, only the capacitors C are retained, it is called an electrically coupled C admittance inverter; if all the capacitors C in the hybrid coupled CB admittance inverter are open, only the inductors jB are retained, it is called a magnetically coupled jB admittance inverter.

[0010] Further, by adjusting the element values of the lumped parameter topology, the admittance inverters J S and the admittance inverters J L can be retained or removed as needed.

[0011] The fourth-order generalized Chebyshev bandpass frequency response described in the present application is divided into two categories. The first category of response is characterized in that the response amplitude is symmetrical about zero frequency; the response amplitude in the passband is equal-ripple fluctuation, with four transmission poles; and the three transmission zeros can be flexibly placed at finite frequencies, which are any positive frequencies other than zero frequency and infinite frequency. This kind of response is called double-sided generalized Chebyshev bandpass frequency response. The second category of response is characterized in that the response amplitude forms a passband only in the positive frequency range; the response amplitude in the passband is equal-ripple fluctuation, with four transmission poles; and the three transmission zeros can be flexibly placed at finite frequencies. This kind of response is called single-sided generalized Chebyshev bandpass frequency response.

[0012] Figure 1 The lumped parameter topology shown has two specific implementation structures, respectively called GCL structure and GCB structure: the GCL structure is used to realize the double-sided generalized Chebyshev bandpass frequency response; and the GCB structure is used to realize the single-sided generalized Chebyshev bandpass frequency response.

[0013] The GCL structure is shown in Figure 7 , the resonator is a CL resonator, the admittance inverters J 12 , the admittance inverter J 14 , the admittance inverter J 23 and the admittance inverter J 34 are CL admittance inverters. The characteristic is that the admittance inverter J 12 , the CL resonator composed of the capacitor C2 and the inductor L2 in parallel, the admittance inverter J 23 , the CL resonator composed of the capacitor C3 and the inductor L3 in parallel, the admittance inverter J 34 are cascaded in sequence, to form an upper branch two-port network; the CL resonator composed of the capacitor C1 and the inductor L1 in parallel, the admittance inverter J 14 , the CL resonator composed of the capacitor C4 and the inductor L4 in parallel are cascaded in sequence, to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel, to form an intermediate two-port network; the source end Source is connected to the left port of the admittance inverter J S , the right port of the admittance inverter J S is cascaded with the left port of the intermediate two-port network; the right port of the intermediate two-port network is cascaded with the left port of the admittance inverter J L , and the right port of the admittance inverter J L is connected to the load end Load; the admittance of the source end Source is Gs, and the admittance of the load end Load is G L .

[0014] Further, the network matrix [A] of the GCL structure is represented as follows:

[0015]

[0016] Network matrix and scattering parameter S 21 and S 11 The relationship between them is

[0017]

[0018]

[0019] Where N represents the number of transmission poles.

[0020] Furthermore, by adjusting the component parameters, the admittance inverter J in the GCL structure can be selected to be retained or removed. S or admittance inverter J L .

[0021] Furthermore, the GCL structure is used to realize a two-sided generalized Chebyshev bandpass frequency response. Figure 8 The paper presents three typical fourth-order bilateral generalized Chebyshev bandpass frequency responses: response A, response B, and response C. To demonstrate the superiority of the lumped-parameter topology described in this invention, these three responses are intentionally set to have the same passband, but each has transmission zeros located at different finite frequencies. This fully illustrates that the lumped-parameter topology described in this invention can realize a fourth-order bilateral generalized Chebyshev bandpass frequency response, and the three transmission zeros can be flexibly placed to achieve complex frequency responses.

[0022] Furthermore, response A has two transmission zeros located at finite frequencies on the left side of the passband and one transmission zero located at a finite frequency on the right side of the passband. The GCL structure used to implement response A is characterized by: admittance inverter J 12 and admittance inverter J 34 For electrically coupled C-admittance inverters; admittance inverters J 14 and admittance inverter J 23 This is a hybrid-coupled CL admittance inverter. In this GCL structure, after absorbing the negative component values, the simplified circuit structure is as follows: Figure 9 As shown, the feature is that: capacitor C 12 This forms the first series impedance two-port network; capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 With inductor L 23 The capacitor C3 and inductor L3 are connected in parallel to form a second series impedance two-port network; the capacitor C3 and inductor L3 are connected in parallel to form a second parallel admittance two-port network; capacitor C 34The third series impedance two-port network is connected in series with the first series impedance two-port network, the first shunt admittance two-port network, the second series impedance two-port network, the second shunt admittance two-port network and the third series impedance two-port network in sequence to form an upper branch two-port network; the capacitor C1 and the inductor L1 are connected in parallel to form a third shunt admittance two-port network; the capacitor C 14 and the inductor L 14 are connected in parallel to form a fourth series impedance two-port network; the capacitor C4 and the inductor L4 are connected in parallel to form a fourth shunt admittance two-port network; the third shunt admittance two-port network, the fourth series impedance two-port network and the fourth shunt admittance two-port network are connected in sequence to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form a total two-port network, and the left port is connected to the source end Source and the right port is connected to the load end Load.

[0023] Further, the three transmission zeros of the response B are all located at finite frequencies on the left side of the passband. The GCL structure for realizing the response B is characterized in that: the admittance inverter J 12 and the admittance inverter J 34 are electrically coupled C admittance inverters; the admittance inverters J 23 and the admittance inverter J 14 are hybrid coupled CL admittance inverters. In the GCL structure, after absorbing the negative element values, the simplified circuit structure obtained is as shown in Figure 9 .

[0024] Further, the three transmission zeros of the response C are all located at finite frequencies on the right side of the passband. The GCL structure for realizing the response C is characterized in that: the admittance inverter J 12 and the admittance inverter J 34 are magnetically coupled L admittance inverters; the admittance inverters J 23 and the admittance inverter J 14 are hybrid coupled CL admittance inverters. In the GCL structure, after absorbing the negative element values, the simplified circuit structure obtained is as shown in Figure 10 , which is characterized in that: the inductor L 12 forms a first series impedance two-port network; the capacitor C2 and the inductor L2 are connected in parallel to form a first shunt admittance two-port network; the capacitor C 23 and the inductor L 23 are connected in parallel to form a second series impedance two-port network; the capacitor C3 and the inductor L3 are connected in parallel to form a second shunt admittance two-port network; the inductor L 34The third series impedance two-port network is formed; the first series impedance two-port network, the first parallel admittance two-port network, the second series impedance two-port network, the second parallel admittance two-port network, and the third series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the third parallel admittance two-port network; capacitor C 14 and inductor L 14 The fourth series impedance two-port network is formed by parallel connection; capacitor C4 and inductor L4 are connected in parallel to form the fourth parallel admittance two-port network; the third parallel admittance two-port network, the fourth series impedance two-port network and the fourth parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network, the left port is then connected to the source terminal, and the right port is then connected to the load terminal.

[0025] GCB structure as follows Figure 11 As shown, the resonator is a CB resonator, and the admittance inverter J... 12 Admittance Inverter J 14 Admittance Inverter J 23 and admittance inverter J 34 This is a CB admittance inverter. Its characteristic is that the admittance inverter J... 12 A CB resonator composed of capacitor C2 and inductor JB2 connected in parallel, and an admittance inverter J. 23 A CB resonator composed of capacitor C3 and inductor JB3 connected in parallel, and an admittance inverter J. 34 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor jB1 connected in parallel form a CB resonator and an admittance inverter J. 14 A CB resonator consisting of capacitor C4 and inductor JB4 connected in parallel is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L .

[0026] Furthermore, the network matrix [A] of the GCB structure is represented as follows:

[0027]

[0028] Further, by adjusting the element parameters, the admittance inverter J in the GCB structure can be selected to be kept or removed S or the admittance inverter J L .

[0029] Further, the GCB structure is used to realize a single-side generalized Chebyshev band-pass frequency response. Figure 12 Three typical third-order single-side generalized Chebyshev band-pass frequency responses, response D, response E and response F, are given in the following table. In order to show the superiority of the lumped parameter topology described in the present application, the three responses are set to have the same passband, but each has a transmission zero at a different finite frequency. It is fully demonstrated that the lumped parameter topology described in the present application can realize a fourth-order single-side generalized Chebyshev band-pass frequency response, and the three transmission zeros can be flexibly placed to realize a complex frequency response.

[0030] Further, response D has two transmission zeros at finite frequencies on the left side of the passband, and one transmission zero at a finite frequency on the right side of the passband. The GCB structure used to realize response D is characterized in that the admittance inverter J 12 and the admittance inverter J 34 is an electrically coupled C admittance inverter; the admittance inverter J 23 and the admittance inverter J 14 is a hybrid coupled CB admittance inverter.

[0031] Further, the three transmission zeros of response E are all at finite frequencies on the left side of the passband. The GCB structure used to realize response E is characterized in that the admittance inverter J 12 and the admittance inverter J 34 is an electrically coupled C admittance inverter; the admittance inverter J 23 and the admittance inverter J 14 is a hybrid coupled CB admittance inverter.

[0032] Further, the three transmission zeros of response F are all at finite frequencies on the right side of the passband. The GCB structure used to realize response F is characterized in that the admittance inverter J 12 and the admittance inverter J 34 is a magnetically coupled jB admittance inverter; the admittance inverter J 23 and the admittance inverter J 14 is a hybrid coupled CB admittance inverter.

[0033] The lumped parameter topology described in the present application has the beneficial effects that: a fourth-order Chebyshev band-pass frequency response can be realized; three transmission zeros can be flexibly placed at finite frequencies; it can be used as a basic constituent unit of a high-order filter; it overcomes the defects of current lumped parameter circuits for realizing complex frequency responses, and has significant technical progress and other advantages. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 : lumped parameter topology schematic diagram according to the present invention;

[0035] Figure 2 : CL resonator schematic diagram;

[0036] Figure 3 : CB resonator schematic diagram;

[0037] Figure 4 : G admittance inverter schematic diagram;

[0038] Figure 5 : CL admittance inverter schematic diagram;

[0039] Figure 6 : CB admittance inverter schematic diagram;

[0040] Figure 7 : GCL structure schematic diagram;

[0041] Figure 8 : general schematic diagram for responses A, B and C;

[0042] Figure 9 : simplified circuit structure schematic diagram for implementing responses A and B;

[0043] Figure 10 : simplified circuit structure schematic diagram for implementing response C;

[0044] Figure 11 : GCB structure schematic diagram;

[0045] Figure 12 : general schematic diagram for responses D, E and F;

[0046] Figure 13 : response A schematic diagram for embodiments one and two;

[0047] Figure 14 : response A schematic diagram for embodiment three;

[0048] Figure 15 : response B schematic diagram for embodiments four and five;

[0049] Figure 16 : response C schematic diagram for embodiments six and seven;

[0050] Figure 17 : response D schematic diagram for embodiment eight;

[0051] Figure 18 : response E schematic diagram for embodiment nine;

[0052] Figure 19 : response F schematic diagram for embodiment ten;

[0053] Figure 20 : response F schematic diagram of example eleven DETAILED DESCRIPTION

[0054] In order to embody the creativity and novelty of the present application, the following will be described in conjunction with the drawings and specific examples, but the embodiments of the present application are not limited thereto.

[0055] In order to fully illustrate the significant technical progress of the present application, the passband of all the following examples is set to be the same, covering the frequency range [1, 2] GHz. Different examples have flexible and controllable transmission zeros for realizing complex frequency responses.

[0056] Example one is to realize response A using GCL structure, and its response is as shown in Figure 13 The return loss in the passband is set to -20 dB, and the three transmission zeros are located at 0.3, 0.6 and 2.5 GHz respectively. The parameter values in the GCL structure are: G S = 0.02 S, G L = 0.02 S, J S = 0.02 S, J L = 0.02 S, C1 = 4.2271 pF, L1 = 4.1641 nH, C2 = 11.9270 pF, L2 = 0.8925 nH, C3 = 11.9270 pF, L3 = 0.8925 nH, C4 = 4.2271 pF, L4 = 4.1641 nH, J 12 = -3.6581 pF·ω, J 14 = -0.2963 pF·ω + 1 / (1103.6175 nH·ω), J 23 = -1.4579 pF·ω + 1 / (1.5462 nH·ω), J 34 = -3.6581 pF·ω.

[0057] Example two is to realize response A using the simplified circuit in Figure 9 , and the element parameter values are: G S = 0.02 S, G L = 0.02 S, C1 = 0.2728 pF, L1 = 4.1798 nH, C2 = 6.8110 pF, L2 = 2.1108 nH, C3 = 6.8110 pF, L3 = 2.1108 nH, C4 = 0.2728 pF, L4 = 4.1798 nH, C 12 = 3.6581 pF, C 14 = 0.2963 pF, L 14 = 1103.6 nH, C 23 = 1.4579 pF, L 23=1.5462nH, C 34 = 3.6581pF. Simulation results are as follows: Figure 13 .

[0058] Example 3, to further demonstrate the superiority of the lumped-parameter topology described in this invention, uses a GCL structure to implement response A, but with different in-band return loss, transmission zero location, and component values ​​compared to Example 1. Its response is as follows: Figure 14 As shown, the return loss within the passband is set to -15dB, and the three transmission zeros are located at 0.2, 0.8, and 2.2GHz, respectively. The parameter values ​​in the GCL structure are: G S =0.01S, G L =0.02S, J S =0.05S, J L =0.02S, C1=63.7150pF, L1=0.2587nH, C2=12.4250pF, L2=0.8183nH, C3=12.4250pF, L3=0.8183nH, C4=5.0971pF, L4=3.2333nH, J 12 = -12.4820pF·ω, J 14 =-2.4089pF·ω+1 / (269.4038nH·ω),J 23 =-2.1197pF·ω+1 / (1.3364nH·ω), J 34 = -3.5304pF·ω.

[0059] Example 4 uses a GCL structure to implement response B, and its response is as follows: Figure 15 As shown, the return loss within the passband is set to -20dB, and the three transmission zeros are all on the left side of the passband, located at 0.2, 0.5, and 0.8 GHz respectively. The parameter values ​​in the GCL structure are: G S =0.02S, G L =0.02S, J S =0.02S, J L =0.02S, C1=3.9137pF, L1=4.2865nH, C2=12.9730pF, L2=1.6298nH, C3=12.9730pF, L3=1.6298nH, C4=3.9137pF, L4=4.2865nH, J 12 = -3.0640pF·ω, J 14 =-0.07093pF·ω+1 / (10593.108nH·ω),J 23 =-7.7511pF·ω+1 / (4.5704nH·ω), J 34 = -3.0640pF·ω.

[0060] Example five is to realize response B using the simplified circuit in Figure 9 , and the element parameters are as follows: G S = 0.02 S, G L = 0.02 S, C1= 0.7788 pF, L1= 4.2882 nH, C2= 2.1579 pF, L2= 2.5331 nH, C3= 2.1579 pF, L3= 2.5331 nH, C4= 0.7788 pF, L4= 4.2882 nH, C 12 = 3.0640 pF, C 14 = 0.07093 pF, L 14 = 10593.0 nH, C 23 = 7.7511 pF, L 23 = 4.5704 nH, C 34 = 3.0640 pF. The simulation results are shown in Figure 15 .

[0061] Example six is to realize response C using the GCL structure, and the response is shown in Figure 16 . The return loss in the passband is set to -20 dB, and the three transmission zeros are all on the right side of the passband, which are located at 2.5, 3.0 and 3.5 GHz respectively. The parameter values in the GCL structure are as follows: G S = 0.02 S, G L = 0.02 S, J S = 0.02 S, J L = 0.02 S, C1= 2.9340 pF, L1= 3.2822 nH, C2= 5.4391 pF, L2= 1.3190 nH, C3= 5.4391 pF, L3= 1.3190 nH, C4= 2.9340 pF, L4= 3.2822 nH, J 12 = 1 / (5.2790 nH·ω), J 14 = -0.02542 pF·ω+1 / (46.9530 nH·ω), J 23 = -2.5609 pF·ω+1 / (2.0130 nH·ω), J 34 = 1 / (5.2790 nH·ω).

[0062] Example seven is to realize response C using the simplified circuit in Figure 10 , and the element parameters are as follows: G S = 0.02 S, G L=0.02S, C1=2.9086pF, L1=10.6450nH, C2=2.8782pF, L2=13.8990nH, C3=2.8782pF, L3=13.8990nH, C4=2.9086pF, L4=10.6450nH, L 12 =5.2790nH, C 14 =0.02542pF, L 14 =46.9530nH, C 23 =2.5609pF, L 23 =2.0130nH, L 34 = 5.2790 nH. Simulation results are as follows: Figure 16 .

[0063] Example 8 uses the GCB structure to implement response D, and its response is as follows: Figure 17 As shown. The return loss within the passband is set to -20dB; two transmission zeros are located on the left side of the passband, and one transmission zero is located on the right side of the passband, at 0.2, 0.5, and 2.5GHz respectively. The parameter values ​​in the GCB structure are: G S =0.02S, G L =0.02S, J S =0.02S, J L =0.02S, C1=6.6919pF, B1=-0.05260S, C2=3.3978pF, B2=-0.03219S, C3=3.3978pF, B3=-0.03219S, C4=6.6919pF, B3=-0.05260S, J 12 = -1.3850pF·ω, J 14 =-0.3179pF·ω+0.0003377S, J 23 = -0.5799pF·ω + 0.01334S, J 34 = -1.3850pF·ω.

[0064] Example 9 uses a GCB structure to implement response E, and its response is as follows: Figure 18 As shown. The return loss within the passband is set to -20dB, and the three transmission nulls are all on the left side of the passband, located at 0.2, 0.5, and 0.8 GHz respectively. The parameter values ​​in the GCB structure are: G S =0.02S, G L =0.02S, J S =0.02S, J L= 0.02 S, Ci = 6.2447 pF, Bi = -0.05060 S, C2= 1.8656 pF, B2= -0.01263 S, C3= 1.8656 pF, B3= -0.01263 S, C4= 6.2447 pF, B3= -0.05065 S, J 12 = -0.8218 pF- ω, J 14 = -0.2097 pF- ω + 0.0002006 S, J 23 = -1.1359 pF- ω + 0.006223 S, J 34 = -0.8218 pF- ω.

[0065] Example Ten is a GCB structure implementation of response F, which response is shown in Figure 19 The return loss in the passband is set to -20 dB, and three transmission zeros are all on the right side of the passband, at 2.5, 3.0 and 3.5 GHz, respectively. The parameter values in the GCB structure are: G S = 0.02 S, G L = 0.02 S, J S = 0.02 S, J L = 0.02 S, Ci = 5.8170 pF, Bi = -0.05305 S, C2= 2.1455 pF, B2= -0.02519 S, C3= 2.1455 pF, B3= -0.02519 S, C4= 5.8170 pF, B3= -0.05305 S, J 12 = 0.007913 S, J 14 = -0.1543 pF- ω + 0.005445 S, J 23 = -1.3455 pF- ω + 0.01809 S, J 34 = 0.007913 S.

[0066] Example Eleven is a GCB structure implementation of response F, which response is shown in Figure 20 The return loss in the passband is set to -30 dB, and three transmission zeros are all on the right side of the passband, at 2.5, 3.0 and 3.5 GHz, respectively. The parameter values in the GCB structure are: G S = 0.02 S, G L = 0.01 S, J S = 0.02 S, J L = 0.01 S, Ci = 3.7909 pF, Bi = -0.03346 S, C2= 2.5929 pF, B2= -0.03191 S, C3= 2.5929 pF, B3= -0.03191 S, C4= 1.8955 pF, B3= -0.01673 S, J 12= 0.008531 S, J 14 = -0.1468 pF-ω + 0.005076 S, J 23 = -1.7929 pF-ω + 0.02465 S, J 34 = 0.006033 S.

[0067] The above listed embodiments sufficiently demonstrate that the lumped parameter topology described in the present application can be used to achieve a fourth order generalized Chebyshev bandpass frequency response with three transmission zeros placed flexibly at finite frequencies, which is a significant technical progress. Those skilled in the art will realize that the embodiments described herein are presented for the purpose of helping the reader to understand the principles of the present application, and should be understood as not limiting the scope of protection of the present application to such specific recitations and embodiments. Those skilled in the art can make various other specific modifications and combinations according to the technical inspiration provided by the present application without departing from the spirit of the present application, and such modifications and combinations are still within the scope of protection of the present application.

Claims

1. A lumped parameter topology, characterized in that: Admittance Inverter J 12 Resonator R2, Admittance Inverter J 23 Resonator R3 and admittance inverter J 34 Cascaded sequentially to form the upper branch two-port network; resonator R1, admittance inverter J 14 The resonator R4 is cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L By adjusting the component parameters, the admittance inverter J can be selected to be retained or removed. S or admittance inverter J L This lumped-parameter topology is used to realize two types of fourth-order generalized Chebyshev bandpass frequency responses. The first type of response is called the bilateral generalized Chebyshev bandpass frequency response, whose response amplitude is symmetrical about zero frequency. The response amplitude in the passband has equal ripples and has four transmission poles. Its three transmission zeros can be flexibly placed at finite frequencies, which are any positive frequencies other than zero frequency and infinite frequency. The second type of response is called the unilateral generalized Chebyshev bandpass frequency response, whose response amplitude forms a passband only in the positive frequency range. The response amplitude in the passband has equal ripples and has four transmission poles. Its three transmission zeros can be flexibly placed at finite frequencies.

2. The lumped parameter topology according to claim 1, specifically manifested as a GCL structure, is used to realize a fourth-order bilateral generalized Chebyshev bandpass frequency response; characterized in that: Admittance Inverter J 12 A CL resonator composed of capacitor C2 and inductor L2 connected in parallel, and an admittance inverter J. 23 A CL resonator composed of capacitor C3 and inductor L3 connected in parallel, and an admittance inverter J. 34 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor L1 connected in parallel form the CL resonator and the admittance inverter J. 14 A CL resonator, consisting of capacitor C4 and inductor L4 connected in parallel, is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L By adjusting the component parameters, the admittance inverter J can be selected to be retained or removed. S or admittance inverter J L .

3. The lumped parameter topology according to claim 1, used to realize a fourth-order bilateral generalized Chebyshev bandpass frequency response, can place two transmission zeros at finite frequencies on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband; or it can place all three transmission zeros at finite frequencies on the left side of the passband; this lumped parameter topology is specifically manifested as a GCL structure, characterized in that: Admittance Inverter J 12 A CL resonator composed of capacitor C2 and inductor L2 connected in parallel, and an admittance inverter J. 23 A CL resonator composed of capacitor C3 and inductor L3 connected in parallel, and an admittance inverter J. 34 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor L1 connected in parallel form the CL resonator and the admittance inverter J. 14 A CL resonator, consisting of capacitor C4 and inductor L4 connected in parallel, is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L Admittance Inverter J S and admittance inverter J L For G admittance inverter, admittance inverter J 12 and admittance inverter J 34 For electrically coupled C-admittance inverters, admittance inverters J 14 and admittance inverter J 23 This is a hybrid-coupled CL admittance inverter; by adjusting the component parameters, the admittance inverter can be selected to be retained or removed. S or admittance inverter J L .

4. The lumped parameter topology according to claim 1, used to realize a fourth-order bilateral generalized Chebyshev bandpass frequency response, can place two transmission zeros at finite frequencies on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband; or it can place all three transmission zeros at finite frequencies on the left side of the passband; the lumped parameter topology specifically manifests as a simplified circuit structure, characterized in that: Capacitor C 12 This forms the first series impedance two-port network; capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 With inductor L 23 The capacitor C3 and inductor L3 are connected in parallel to form a second series impedance two-port network; the capacitor C3 and inductor L3 are connected in parallel to form a second parallel admittance two-port network; capacitor C 34 The third series impedance two-port network is formed; the first series impedance two-port network, the first parallel admittance two-port network, the second series impedance two-port network, the second parallel admittance two-port network, and the third series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the third parallel admittance two-port network; capacitor C 14 and inductor L 14 The fourth series impedance two-port network is formed by parallel connection; capacitor C4 and inductor L4 are connected in parallel to form the fourth parallel admittance two-port network; the third parallel admittance two-port network, the fourth series impedance two-port network and the fourth parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network, the left port is then connected to the source terminal, and the right port is then connected to the load terminal.

5. The lumped parameter topology according to claim 1, used to realize a fourth-order bilateral generalized Chebyshev bandpass frequency response, which places the three transmission zeros at finite frequencies on the right side of the passband; the lumped parameter topology is specifically manifested as a GCL structure, characterized in that: Inductor L 12 This forms the first series impedance two-port network; capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 With inductor L 23 The capacitor C3 and inductor L3 are connected in parallel to form a second series impedance two-port network; the capacitor C3 and inductor L3 are connected in parallel to form a second parallel admittance two-port network; the inductor L 34 The third series impedance two-port network is formed; the first series impedance two-port network, the first parallel admittance two-port network, the second series impedance two-port network, the second parallel admittance two-port network, and the third series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the third parallel admittance two-port network; capacitor C 14 and inductor L 14 The following are connected in parallel to form the fourth series impedance two-port network; capacitor C4 and inductor L4 are connected in parallel to form the fourth parallel admittance two-port network; the third parallel admittance two-port network, the fourth series impedance two-port network, and the fourth parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network, the left port is then connected to the source terminal (Source), and the right port is then connected to the load terminal (Load); the admittance of the source terminal (Source) is Gs, and the admittance of the load terminal (Load) is G. L Admittance Inverter J 12 and admittance inverter J 34 For magnetically coupled L-admittance inverters, admittance inverters J 23 and admittance inverter J 14 This is a hybrid-coupled CL admittance inverter; by adjusting the component parameters, the admittance inverter can be selected to be retained or removed. S or admittance inverter J L .

6. The lumped parameter topology according to claim 1, used to realize a fourth-order bilateral generalized Chebyshev bandpass frequency response, can place the three transmission zeros at finite frequencies on the right side of the passband; this lumped parameter topology specifically manifests as a simplified circuit structure, characterized in that: Inductor L 12 This forms the first series impedance two-port network; capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 With inductor L 23 The capacitor C3 and inductor L3 are connected in parallel to form a second series impedance two-port network; the capacitor C3 and inductor L3 are connected in parallel to form a second parallel admittance two-port network; the inductor L 34 The third series impedance two-port network is formed; the first series impedance two-port network, the first parallel admittance two-port network, the second series impedance two-port network, the second parallel admittance two-port network, and the third series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the third parallel admittance two-port network; capacitor C 14 and inductor L 14 The fourth series impedance two-port network is formed by parallel connection; capacitor C4 and inductor L4 are connected in parallel to form the fourth parallel admittance two-port network; the third parallel admittance two-port network, the fourth series impedance two-port network and the fourth parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network, the left port is then connected to the source terminal, and the right port is then connected to the load terminal.

7. The lumped parameter topology according to claim 1, specifically manifested as a GCB structure, is used to realize a fourth-order one-sided generalized Chebyshev bandpass frequency response; characterized in that: Admittance Inverter J 12 A CB resonator composed of capacitor C2 and inductor JB2 connected in parallel, and an admittance inverter J. 23 A CB resonator composed of capacitor C3 and inductor JB3 connected in parallel, and an admittance inverter J. 34 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor jB1 connected in parallel form a CB resonator and an admittance inverter J. 14 A CB resonator consisting of capacitor C4 and inductor JB4 connected in parallel is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L By adjusting the component parameters, the admittance inverter J can be selected to be retained or removed. S or admittance inverter J L .

8. The lumped parameter topology according to claim 1, used to realize a fourth-order one-sided generalized Chebyshev bandpass frequency response, wherein two transmission zeros can be placed at finite frequencies on the left side of the passband, and one transmission zero can be placed at a finite frequency on the right side of the passband; alternatively, all three transmission zeros can be placed at finite frequencies on the left side of the passband; the lumped parameter topology is specifically manifested as a GCB structure, characterized in that: Admittance Inverter J 12 A CB resonator composed of capacitor C2 and inductor JB2 connected in parallel, and an admittance inverter J. 23 A CB resonator composed of capacitor C3 and inductor JB3 connected in parallel, and an admittance inverter J. 34 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor jB1 connected in parallel form a CB resonator and an admittance inverter J. 14 A CB resonator consisting of capacitor C4 and inductor JB4 connected in parallel is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L Admittance Inverter J 12 and admittance inverter J 34 For electrically coupled C-admittance inverters, admittance inverters J 23 and admittance inverter J 14 This is a hybrid-coupled CB admittance inverter; by adjusting the component parameters, the admittance inverter can be selected to be retained or removed. S or admittance inverter J L .

9. The lumped parameter topology according to claim 1, used to realize a fourth-order one-sided generalized Chebyshev bandpass frequency response, wherein all three transmission zeros are placed at finite frequencies on the right side of the passband; the lumped parameter topology is specifically manifested as a GCB structure, characterized in that: Admittance Inverter J 12 A CB resonator composed of capacitor C2 and inductor JB2 connected in parallel, and an admittance inverter J. 23 A CB resonator composed of capacitor C3 and inductor JB3 connected in parallel, and an admittance inverter J. 34 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor jB1 connected in parallel form a CB resonator and an admittance inverter J. 14 A CB resonator consisting of capacitor C4 and inductor JB4 connected in parallel is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L Admittance Inverter J 12 and admittance inverter J 34 For magnetically coupled jB admittance inverter, admittance inverter J 23 and admittance inverter J 14 This is a hybrid-coupled CB admittance inverter; by adjusting the component parameters, the admittance inverter can be selected to be retained or removed. S or admittance inverter J L .

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