Magnetic field modulation device for magnetoresistive-superconducting hybrid magnetic sensor and method of use

Abstract

The application discloses a kind of magnetoresistance-superconducting composite magnetic sensor magnetic field modulation device and its application method, the magnetic field modulation device of the application includes insulating substrate and is located on superconducting ring of insulating substrate, two inner holes are equipped on superconducting ring, one inner hole will be superconducting ring be divided into first superconducting area and second superconducting area, another inner hole will be superconducting ring be divided into third superconducting area and fourth superconducting area, first superconducting area and third superconducting area are located in the same side of superconducting narrow area, first superconducting area, second superconducting area, third superconducting area and fourth superconducting area are all equipped with heating component.The application has high modulation efficiency, strong magnetic field resolution capability, superconducting ring can make magnetic field noiseless amplification thousand times, heating component is heated to form high thermal modulation efficiency, 1 / f noise of magnetoresistance sensor has greater inhibitory effect, effectively improve weak magnetic measurement capability.The application can be prepared using MEMS process, with small size, simple realization, high integration degree advantage.

Description

Technical Field

[0001] This invention relates to weak magnetic signal detection technology, specifically to a magnetic field modulation device for a magnetoresistive-superconducting composite magnetic sensor and its application method. Background Technology

[0002] In the field of weak magnetic field detection, the detection of magnetic fields on the pT and fT scale is an important current research topic, applicable to magnetic anomaly detection, biomagnetic field measurement, geological exploration, and other fields, possessing significant application value. Magnetoresistance (MR) magnetic sensors, with their advantages of small size and low power consumption, are currently a research hotspot in magnetic sensors; however, their magnetic field resolution is only at the nT to pT level. In recent years, researchers have used superconducting thin films to fabricate magnetic field amplifiers, achieving much higher magnetic field gain than traditional soft magnetic material focusing amplifiers (theoretically reaching thousands of times), significantly improving the resolution of magnetoresistance sensors to the pT or fT level. Simultaneously, by using superconducting rings to convert magnetic flux changes into magnetic field magnitude, shielding of the geomagnetic background field and sensitivity to weak magnetic anomaly signals can be achieved, potentially offering an innovative solution to the problem of detecting weak magnetic fields in geomagnetic environments. Magnetoresistance-superconducting composite magnetic sensors have enormous potential to be developed into miniaturized, high-performance magnetic sensors.

[0003] With the rapid development of magnetoresistive elements and the continuous improvement of magnetic field measurement sensitivity, 1 / f noise has gradually become the main factor limiting the performance improvement of sensitive elements, especially tunneling magnetoresistance (TMR) and giant magnetoresistance (GMR) devices. In many application fields, the measured magnetic fields are mostly in the low-frequency range, such as the magnetic fields of magnetic anomalies and anomalous magnetic fields in geological exploration. In such applications, magnetoresistive-superconducting composite magnetic sensors are hampered by 1 / f noise, making it difficult to achieve higher-resolution magnetic field detection. Therefore, suppressing 1 / f noise to improve the resolution of low-frequency magnetic fields is of great significance for promoting the development of magnetoresistive-superconducting composite magnetic sensors into miniaturized, high-performance magnetic sensors.

[0004] Magnetic field modulation technology is an effective means of suppressing 1 / f noise. Its main idea is to modulate the measured external magnetic field to the high-frequency region, thereby avoiding the influence of 1 / f noise. Traditional methods for suppressing magnetoresistive 1 / f noise are mainly based on flux modulation of soft magnetic materials. Their characteristics and mechanisms are significantly different from those of superconducting structures, and therefore cannot be used in magnetoresistive-superconducting composite magnetic sensors. Summary of the Invention

[0005] The technical problem to be solved by the present invention is as follows: In view of the above-mentioned problems of the prior art, the present invention provides a magnetic field modulation device for a magnetoresistive-superconducting composite magnetic sensor and its application method. The present invention aims to solve the problem that the lack of a high-efficiency magnetic field modulation structure in the magnetoresistive-superconducting composite magnetic sensor makes it difficult to effectively suppress 1 / f noise.

[0006] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:

[0007] A magnetic field modulation device for a magnetoresistive-superconducting composite magnetic sensor includes an insulating substrate and a superconducting ring disposed on the insulating substrate. The superconducting ring has two inner holes arranged adjacent to each other along the length direction through a superconducting narrow region. One inner hole divides the superconducting ring into a first superconducting region and a second superconducting region, and the other inner hole divides the superconducting ring into a third superconducting region and a fourth superconducting region. The first superconducting region and the third superconducting region are located on the same side of the superconducting narrow region. Heating components are provided on the first superconducting region, the second superconducting region, the third superconducting region, and the fourth superconducting region.

[0008] Optionally, the heating components of the first superconducting region and the fourth superconducting region are arranged in series.

[0009] Optionally, the heating components of the second superconducting region and the third superconducting region are arranged in series.

[0010] Optionally, the insulating substrate is provided with two pairs of electrodes, and the heating components of the first superconducting region and the fourth superconducting region are arranged in series between one pair of electrodes, and the heating components of the second superconducting region and the third superconducting region are arranged in series between the other pair of electrodes.

[0011] Optionally, the superconducting ring is square-shaped, and the two inner holes are located on one side of the superconducting ring.

[0012] Optionally, the insulating substrate is made of alumina ceramic.

[0013] Optionally, the superconducting ring is integrated onto the surface of an insulating substrate using MEMS technology.

[0014] Optionally, the heating component is generated on the surface of the superconducting ring using a sputtering process.

[0015] Optionally, a magnetoresistive magnetic sensor is provided on the upper or lower side of the superconducting narrow region.

[0016] The present invention also provides a method for applying the aforementioned magnetoresistive-superconducting composite magnetic sensor magnetic field modulation device, comprising the step of controlling the superconducting narrow region of the superconducting ring to generate alternating magnetic fields to achieve modulation from a DC magnetic field to an AC magnetic field:

[0017] S1, within the preset first current control time, control the heating components of the first superconducting region and the fourth superconducting region to work, while the heating components of the second superconducting region and the third superconducting region do not work, so that the first superconducting region and the fourth superconducting region are short-circuited, and the current of the superconducting ring flows into the third superconducting region through the second superconducting region and the superconducting narrow region in sequence, forming a positive magnetic field on the superconducting narrow region.

[0018] S2, during the preset second current control time, the heating components controlling the first superconducting region, the fourth superconducting region, the second superconducting region, and the third superconducting region are all not working. The current of the superconducting ring flows directly from the first superconducting region into the third superconducting region, and from the second superconducting region into the fourth superconducting region. No current flows through the superconducting narrow region.

[0019] S3, during the preset third current control time, the heating components of the first and fourth superconducting regions are not operated, while the heating components of the second and third superconducting regions are operated, causing the second and third superconducting regions to be short-circuited. The current of the superconducting ring flows into the fourth superconducting region through the first superconducting region and the superconducting narrow region in sequence, forming a magnetic field in the opposite direction on the superconducting narrow region.

[0020] Compared with existing technologies, the present invention has the following advantages: 1. The bridge-type thermal control method of the magnetic field modulation structure of the magnetoresistive-superconducting composite magnetic sensor adopted in the present invention has the advantages of high modulation efficiency and strong magnetic field resolution. The superconducting ring can amplify the magnetic field by a thousand times without noise, and the thermal modulation efficiency formed by the heating component is high, which has a significant suppression effect on the 1 / f noise of the magnetoresistive sensor and effectively improves the weak magnetic field measurement capability. 2. The structure of the present invention can be fabricated using MEMS technology, which has the advantages of small size, simple implementation, and high degree of integration. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the magnetic field modulation device in an embodiment of the present invention.

[0022] Figure 2 This is a schematic diagram of the magnetic field modulation device without the heating component in an embodiment of the present invention.

[0023] Figure 3 This is a schematic diagram of the structure of the heating assembly with four superconducting regions in an embodiment of the present invention.

[0024] Figure 4 This is a schematic diagram of the current flow direction during the three current control times in the method of this embodiment of the invention.

[0025] Legend: 1. Insulating substrate; 11. Electrode; 2. Superconducting ring; 21. Superconducting narrow region; 22. Inner hole; 23. First superconducting region; 24. Second superconducting region; 25. Third superconducting region; 26. Fourth superconducting region; 27. Heating component. Detailed Implementation

[0026] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] like Figure 1 and Figure 2 As shown, the magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor in this embodiment includes an insulating substrate 1 and a superconducting ring 2 disposed on the insulating substrate 1. The superconducting ring 2 has two inner holes 22 arranged adjacently along its length through a superconducting narrow region 21. One inner hole 22 divides the superconducting ring 2 into a first superconducting region 23 and a second superconducting region 24, and the other inner hole 22 divides the superconducting ring 2 into a third superconducting region 25 and a fourth superconducting region 26. The first superconducting region 23 and the third superconducting region 25 are located on the same side of the superconducting narrow region 21. Heating components 27 are provided on the first superconducting region 23, the second superconducting region 24, the third superconducting region 25, and the fourth superconducting region 26. Preferably, the superconducting narrow region 21 is arranged along the width direction of the superconducting ring 2. The superconducting narrow region 21 is a very narrow section in the superconducting ring 2, connecting the four superconducting heating regions of the first superconducting region 23, the second superconducting region 24, the third superconducting region 25, and the fourth superconducting region 26 in series.

[0028] It should be noted that the heating components 27 of the first superconducting region 23 and the fourth superconducting region 26 can be arranged in series as needed, or they can be controlled individually as needed. For example, as an optional implementation, to simplify the circuit structure, such as... Figure 3 As shown, in this embodiment, the heating components 27 of the first superconducting region 23 and the fourth superconducting region 26 are arranged in series.

[0029] It should be noted that the heating components 27 of the second superconducting region 24 and the third superconducting region 25 can be arranged in series as needed, or they can be controlled individually as needed. For example, as an optional implementation, to simplify the circuit structure, such as... Figure 3 As shown, in this embodiment, the heating components 27 of the second superconducting region 24 and the third superconducting region 25 are arranged in series.

[0030] like Figure 3 As shown, in this embodiment, two pairs of electrodes 11 are provided on the insulating substrate 1, and the heating components 27 of the first superconducting region 23 and the fourth superconducting region 26 are arranged in series on one pair of electrodes 11 of the two pairs of electrodes. Figure 3 The middle is recorded as I 1_1 and I Between 1_2), the heating elements 27 of the second superconducting region 24 and the third superconducting region 25 are arranged in series in another pair of electrodes 11 of the two pairs of electrodes. Figure 3 The middle is recorded as I 2_1 and IBetween 2_2), through the above structure, the heating components 27 of the first superconducting region 23, the second superconducting region 24, the third superconducting region 25 and the fourth superconducting region 26 form a connection structure in which they are connected in series and then in parallel.

[0031] The superconducting ring 2 is used to sense the magnetic flux perpendicular to the plane of the superconducting ring region and thus form a superconducting current. In this embodiment, the superconducting ring 2 is square ring-shaped, and the two inner holes 22 are located on one side of the superconducting ring 2.

[0032] The insulating substrate 1 can be made of any insulating material as needed. For example, as an optional embodiment, the insulating substrate 1 in this embodiment is made of alumina ceramic.

[0033] The superconducting ring 2 can be integrated into the insulating substrate 1 using a processing technology as needed. For example, as an optional implementation, in this embodiment, the superconducting ring 2 is integrated onto the surface of the insulating substrate 1 using a MEMS process. The MEMS process is an existing processing technology, and the specific process includes sequential deposition, ultraviolet lithography, and IBE etching.

[0034] In this embodiment, the heating component 27 is formed onto the surface of the superconducting ring 2 using a sputtering process, such as... Figure 1 and Figure 2 As can be seen, in this embodiment, the heating component 27 is a resistance wire, but it can also be in the form of a resistance film, resistance sheet, etc.

[0035] In this embodiment, a magnetoresistive magnetic sensor is provided on the upper or lower side of the superconducting narrow region 21. The magnetoresistive magnetic sensor can be sensitive to alternating magnetic fields. By adjusting the magnetic field modulation current control period of the magnetoresistive-superconducting composite sensor, the frequency of the alternating magnetic field can be adjusted, thereby suppressing the 1 / f noise of the magnetoresistive field.

[0036] This embodiment also provides an application method for the magnetic field modulation device of the aforementioned magnetoresistive-superconducting composite magnetic sensor, including the step of controlling the superconducting narrow region 21 of the superconducting ring 2 to generate alternating magnetic fields to achieve modulation from DC magnetic field to AC magnetic field:

[0037] S1, within the preset first current control time, the heating components 27 of the first superconducting region 23 and the fourth superconducting region 26 are operated, while the heating components 27 of the second superconducting region 24 and the third superconducting region 25 are not operated, causing the first superconducting region 23 and the fourth superconducting region 26 to be short-circuited. The current of the superconducting ring 2 flows sequentially through the second superconducting region 24 and the superconducting narrow region 21 into the third superconducting region 25, forming a positive magnetic field on the superconducting narrow region 21. At this time, the current flow direction is as follows: Figure 4 As indicated by the arrow in (a);

[0038] S2, during the preset second current control time, the heating components 27 controlling the first superconducting region 23, the fourth superconducting region 26, the second superconducting region 24, and the third superconducting region 25 are all inactive. The current in the superconducting ring 2 flows directly from the first superconducting region 23 into the third superconducting region 25, and from the second superconducting region 24 into the fourth superconducting region 26. No current flows through the superconducting narrow region 21 (no voltage difference between the two ends). At this time, the current flow direction is as follows: Figure 4 As indicated by the arrow in (b), superconducting ring 2 is in a fully superconducting state;

[0039] S3, within the preset third current control time, the heating components 27 controlling the first superconducting region 23 and the fourth superconducting region 26 are deactivated, while the heating components 27 controlling the second superconducting region 24 and the third superconducting region 25 are activated, causing the second superconducting region 24 and the third superconducting region 25 to be short-circuited. The current in the superconducting ring 2 flows sequentially through the first superconducting region 23 and the superconducting narrow region 21 into the fourth superconducting region 26, forming a magnetic field in the opposite direction on the superconducting narrow region 21. At this time, the current flow direction is as follows: Figure 4 As indicated by the arrow in (c).

[0040] By alternating the heating wire current state under three different current control times, alternating currents can be generated in the superconducting narrow region. These alternating currents produce alternating magnetic fields, thus modulating the DC magnetic field to an AC magnetic field. It is important to note that the preset second current control time is a necessary control time. Improper control could cause all heating components 27 to heat up simultaneously, resulting in the absence of a superconducting loop in the superconducting structure, the disappearance of the superconducting current, and the loss of some magnetic field change information when re-entering the superconducting state.

[0041] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A magnetic field modulation device for a magnetoresistive-superconducting hybrid magnetic sensor, characterized by The application relates to a superconducting ring (2) arranged on an insulating base (1), wherein two inner holes (22) are arranged on the superconducting ring (2) and pass through a superconducting narrow area (21) in the length direction, one inner hole (22) divides the superconducting ring (2) into a first superconducting area (23) and a second superconducting area (24), and the other inner hole (22) divides the superconducting ring (2) into a third superconducting area (25) and a fourth superconducting area (26), the first superconducting area (23) and the third superconducting area (25) are located on the same side of the superconducting narrow area (21), heating assemblies (27) are arranged on the first superconducting area (23), the second superconducting area (24), the third superconducting area (25) and the fourth superconducting area (26), the frequency of an alternating magnetic field is adjusted by adjusting the magnetic field modulation current control period of a magnetoresistance-superconducting composite sensor to suppress the 1 / f noise of the magnetoresistance, and the superconducting narrow area (21) of the superconducting ring (2) generates an alternating magnetic field to realize the modulation of a direct current magnetic field to an alternating magnetic field, S1, in a preset first current control time, the heating assemblies (27) of the first superconducting area (23) and the fourth superconducting area (26) are controlled to work, the heating assemblies (27) of the second superconducting area (24) and the third superconducting area (25) are not controlled to work, the first superconducting area (23) and the fourth superconducting area (26) are short-circuited, the current of the superconducting ring (2) flows into the third superconducting area (25) through the second superconducting area (24) and the superconducting narrow area (21) in sequence, and a positive direction magnetic field is formed on the superconducting narrow area (21); S2, in a preset second current control time, the heating assemblies (27) of the first superconducting area (23), the fourth superconducting area (26), the second superconducting area (24) and the third superconducting area (25) are not controlled to work, the current of the superconducting ring (2) directly flows into the third superconducting area (25) through the first superconducting area (23), flows into the fourth superconducting area (26) through the second superconducting area (24), and no current passes through the superconducting narrow area (21); and S3, in a preset third current control time, the heating assemblies (27) of the first superconducting area (23) and the fourth superconducting area (26) are not controlled to work, the heating assemblies (27) of the second superconducting area (24) and the third superconducting area (25) are controlled to work, the second superconducting area (24) and the third superconducting area (25) are short-circuited, the current of the superconducting ring (2) flows into the fourth superconducting area (26) through the first superconducting area (23) and the superconducting narrow area (21) in sequence, and a reverse direction magnetic field is formed on the superconducting narrow area (21).

2. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 1, characterized in that, The heating assemblies (27) of the first superconducting area (23) and the fourth superconducting area (26) are arranged in series.

3. The magnetic field modulation device of a magnetoresistive-superconducting composite magnetic sensor according to claim 2, characterized in that, The heating assemblies (27) of the second superconducting area (24) and the third superconducting area (25) are arranged in series.

4. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 3, characterized in that, The insulating substrate (1) is provided with two pairs of electrodes (11), the heating assembly (27) of the first superconducting region (23) and the fourth superconducting region (26) are arranged in series between one pair of electrodes (11) of the two pairs of electrodes, and the heating assembly (27) of the second superconducting region (24) and the third superconducting region (25) are arranged in series between the other pair of electrodes (11) of the two pairs of electrodes.

5. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 1, wherein, The superconducting ring (2) is a square ring, and the two inner holes (22) are located on one side of the superconducting ring (2).

6. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 1, wherein, The insulating substrate (1) is made of alumina ceramic.

7. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 1, wherein The superconducting ring (2) is integrated onto the surface of the insulating substrate (1) by using a MEMS process.

8. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 1, characterized in that, The heating assembly (27) is generated on the surface of the superconducting ring (2) by using a sputtering process.

9. The magnetic field modulation device of the magnetoresistive-superconducting composite magnetic sensor according to claim 1, characterized in that, The upper side or the lower side of the superconducting narrow region (21) is provided with a magnetoresistance magnetic sensor.

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