An arrayed oscillator based on klystrons to achieve high-gain frequency-locked phase-locked loop.

Abstract

This invention discloses an arrayed oscillator based on a klystron for high-gain frequency-locked phase-locking, belonging to the field of vacuum electronic device technology. The arrayed oscillator includes at least two extended interaction oscillators and one extended interaction klystron. The extended interaction klystron includes an input cavity, at least one intermediate cavity, and an output cavity connected in sequence. The output cavities of the extended interaction oscillators and the klystron are arranged in a linear array or ring with equal spacing. The gaps or coupling cavities of adjacent components are connected by coupling bridges, realizing the arrayed interconnection of each component. This invention combines the advantages of high gain, controllable frequency and phase of the klystron with the advantages of high power, high efficiency, and simple structure of the arrayed extended interaction oscillator, achieving frequency-locked phase-locking of the arrayed oscillator. It is applicable to single-beam and multi-beam oscillators across the entire frequency band, capable of achieving output power at the MW or even GW level, and has significant engineering significance and practical value.

Description

Technical Field

[0001] This invention belongs to the field of vacuum electronic device technology, specifically relating to an arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop. Background Technology

[0002] Vacuum electronic devices are those that convert signals from one form to another by utilizing the various effects of electrons moving in a vacuum or a specific gas. Extended interaction oscillators (EAOs), as high-power, high-efficiency, and miniaturized vacuum electronic devices, have been extensively studied since the 1960s. EAOs retain the reliability and high power characteristics of traditional klystrons, achieving high efficiency and high power at millimeter-wave frequencies by introducing multiple coupling slot gaps, while also possessing the potential to extend to terahertz frequencies. They play a crucial role in scientific, commercial, and military applications, such as communications, radar, transmitters, and sensors. Improving the output power and efficiency of EAOs has always been an important goal. Due to inherent limitations in physical mechanisms and manufacturing processes, EAOs have power limits, making arraying multiple devices an essential approach. The core technology in this process is the oscillator's frequency-locked and phase-locked loop (PLL) technology.

[0003] In 1946, R. Alder proposed the relationship between the injected phase-locked loop (PLL) bandwidth and the power of the PLL excitation signal. The output microwave phase of an oscillator is random and limited by the classical Adler condition. To achieve PLL between MW-level oscillators, an external injection of power in the hundreds of kW range is required, which increases the size, weight, cost, and difficulty of oscillator array development. Achieving PLL between multiple oscillators requires injecting large amounts of power into the oscillators or using complex coupling structures, and is only suitable for arrays with a small number of oscillator units. Therefore, achieving high-gain frequency-locked PLL is a key technology for the miniaturization and practical application of arrayed oscillators.

[0004] A klystron is a high-gain, phase- and frequency-stable vacuum electronic device. Its basic function is to amplify external radio frequency signals before outputting them. Therefore, its output phase and frequency are naturally locked by the injected signal, reducing the requirements for the seed source power level and greatly improving the device's gain. Summary of the Invention

[0005] To address the shortcomings of existing technologies and achieve high-gain frequency-locked phase-locking (PLL), this invention combines the advantages of klystrons (KJTs)—high gain, controllable frequency and phase—with the advantages of arrayed extended interaction oscillators (AIOs)—high power, high efficiency, and simple structure—and proposes an arrayed oscillator based on KJTs for high-gain KJTs and PLL. Building upon traditional AIOs, interconnection is achieved by setting coupling bridges between gaps or coupling cavities, while KJTs are used to achieve KJTs and PLL. This invention is applicable to full-band single-beam and multi-beam oscillators, achieving MW or even GW-level output power, and has significant engineering and practical value.

[0006] The technical solution adopted in this invention is as follows:

[0007] An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop is characterized by comprising at least two extended interaction oscillators and one extended interaction klystron.

[0008] The extended interaction klystron includes an input cavity section, at least one intermediate cavity section, and an output cavity section connected in sequence; wherein, the input cavity structure is used to input radio frequency signals, and the output cavity section is connected to the extended interaction oscillator;

[0009] Both the extended interaction oscillator and the output cavity section adopt a multi-output structure to achieve distributed energy extraction, alleviating the problem of power capacity limitation of standard waveguides; the extended interaction oscillator and the output cavity section are arranged in a linear array or ring with equal spacing, and the gaps or coupling cavities of adjacent components are connected by coupling bridges to realize the array interconnection of each component.

[0010] Preferably, when the extended interaction oscillator and the output cavity portion are arranged in a linear array, the output cavity portion is located in the middle of the array.

[0011] Preferably, when the extended interaction oscillator and the output cavity are arranged in a linear array, the coupling bridge is a rectangular cavity structure with adjustable length; when the extended interaction oscillator and the klystron output cavity are arranged in a ring, the coupling bridge is a rectangular cavity structure or an arc-shaped cylindrical cavity structure with adjustable length.

[0012] Preferably, the lateral length of the rectangular cavity structure or the circular arc-shaped cavity structure is an integer multiple of the half-waveguide wavelength. For the entire system, there are two resonant modes: even-multiple modes of half the wavelength and odd-multiple modes of half the wavelength. The even-multiple modes of half the wavelength are characterized by a 0° phase difference between the extended interaction fields on both sides of the circuit. The odd-multiple modes of half the wavelength are characterized by a π-phase difference between them.

[0013] Preferably, the height and thickness of the connection between the coupling bridge and the gap are less than or equal to the size of the connected gap.

[0014] Preferably, the extended interaction oscillator and the extended interaction klystron are single-injection, double-injection, or multi-injection structures.

[0015] Preferably, both the extended interaction klystron and the extended interaction oscillator operate in π-mode or 2π-mode, with the distance P between them determined by the synchronization condition.

[0016] The relationship between the distance P between the gaps and the working mode is as follows: In the formula, f is the operating frequency, and v e Let N be the DC velocity of the electron, and N be a constant.

[0017] The beneficial effects of this invention are as follows:

[0018] (1) This invention proposes an arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop (PLL). Compared to the traditional single extended interaction oscillator and extended interaction klystron, this invention interconnects multiple extended interaction oscillators with a single extended interaction klystron to form a high-gain PLL arrayed structure. Under the same input parameters, the phase and frequency of the klystron are controlled by an external RF signal. Then, a coupling bridge is used to achieve in-phase and frequency-coordinated output of multiple oscillators and the klystron, resulting in a significant increase in power and gain.

[0019] (2) This invention connects multiple extended interaction oscillators and a single extended interaction klystron together via a coupling bridge, achieving energy coupling between different circuits. Tight coupling is achieved by adjusting the lateral dimensions of the coupling bridge, resulting in almost no energy loss during the frequency-locking and phase-locking process. Theoretically, the phase-locking efficiency is as high as 99.9%, making it suitable for large-scale array-based frequency-locking and phase-locking with broad application prospects. The length of the coupling bridge in this invention is adjustable, and its lateral length can be adjusted to support individual circuits using independent permanent magnet focusing systems.

[0020] (3) It solves the problem that traditional oscillator arrays require a power source with at least 10% output power to achieve frequency and phase locking, and uses a small RF input signal to achieve frequency and phase locking of the entire array device.

[0021] (4) This invention is applicable to single-output, dual-output, and multi-output structures, alleviating the limitation of standard waveguide power capacity. The single klystron and oscillator of this invention achieve power output at the hundred kW level and gain of more than 50 dB in the Ka band. The arrayed oscillator based on the klystron to achieve high-gain frequency-locked and phase-locked loop can achieve power output at the MW or even GW level, while achieving a significant increase in gain. Attached Figure Description

[0022] Figure 1 This is a three-dimensional structural schematic diagram of an arrayed oscillator based on a klystron to achieve high gain frequency-locked phase-locked loop, provided as an embodiment.

[0023] Figure 2 A three-dimensional structural schematic diagram of the single-injection extended interaction dual-output oscillator provided in Example 1.

[0024] Figure 3 is a three-dimensional structural diagram of the output section of the klystron and the interaction oscillator arranged in a ring according to Example 2. In Figure (a), the coupling bridge is a rectangular cavity structure, and in Figure (b), the coupling bridge is a circular arc cylindrical cavity structure.

[0025] Figure 4 A cross-sectional view of two interconnected single-electron-beam extended interaction oscillators and an adjustable-length coupling bridge provided for an embodiment.

[0026] Figure 5 This is a side view of a single-injection extended interaction dual-output oscillator.

[0027] Figure 6 This is a schematic diagram of the array structure of the five-beam extended interaction oscillator provided in Example 3.

[0028] Explanation of reference numerals: 101, Input cavity; 102, Intermediate cavity; 103, Output cavity; 104, Coupling bridge; 201, Gap; 202, Electron beam channel; 203, Lower coupling cavity; 204, Upper coupling cavity; 205, Coupling hole; 206, Standard output waveguide; 301, Standard flange; 302, Positioning pin; 303, Length adjustment structure. Detailed Implementation

[0029] The specific embodiments of the present invention are described below to enable those skilled in the art to understand the present invention. However, it should be understood that the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, various changes are obvious as long as they are within the spirit and scope of the present invention as defined and determined by the appended claims. All inventions utilizing the concept of the present invention are protected.

[0030] Example 1:

[0031] This embodiment takes a single-beam device with an operating frequency of 35GHz, an operating mode of TM11-2π, and an operating voltage of 40-50kV as an example, and provides an arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop. Figure 1 As shown, it includes four extended interaction oscillators and one extended interaction klystron. The extended interaction klystron includes a five-gap input cavity, three five-gap intermediate cavities, and a nine-gap output cavity arranged sequentially, with each part connected by a through electron beam channel.

[0032] The output cavity section is arranged linearly with the extended interactive oscillator, with the output cavity section located at the center; the gaps between adjacent components located in the middle are connected by a coupling bridge of a rectangular cavity structure, realizing the array interconnection of each component. Figure 4 As shown, the coupling bridge is composed of a length adjustment structure, which includes a first rectangular waveguide, a second rectangular waveguide, and a positioning pin. The second rectangular waveguide is axially movable within the first rectangular waveguide. The positioning pin is used to fix the relative position of the first and second rectangular waveguides. The length adjustment structure allows the length of the coupling bridge to be adjusted according to actual needs. In this embodiment, the length lt of the coupling bridge is 13.4 mm, the height ht is 3.6 mm, and the thickness is 0.4 mm.

[0033] The extended interactive oscillator has the same structure as the output cavity section, such as... Figure 2 As shown, the structure includes: nine gaps, an electron beam channel, a lower coupling cavity, an upper coupling cavity, a coupling aperture, and a standard output waveguide. The nine gaps are of identical size and equally spaced. The electron beam channel runs through all nine gaps. Upper and lower coupling cavities are symmetrically positioned above and below each gap to facilitate interaction between them. The upper coupling cavity is connected to a standard output waveguide above the lower coupling cavity and the lower coupling cavity is connected to a standard output waveguide below the upper coupling cavity via a coupling aperture, employing a dual-output structure to achieve distributed energy extraction. The gap length lg is 4.5 mm, height hg is 3.6 mm, thickness d is 0.5 mm, and the distance P between adjacent gaps is 3 mm. The standard output waveguide has a wide side a of 7.112 mm, a narrow side b of 3.556 mm, and a height hw of 8.6 mm. The coupling cavity length lc is 6.7 mm, and the coupling cavity height hc is 3.6 mm. The electron beam channel radius r is 0.5 mm.

[0034] The structure of the input cavity is similar to that of the output cavity, except that it contains only one standard waveguide and a coupling aperture, with five gaps. The radio frequency signal enters the upper coupling cavity through the input standard waveguide and coupling aperture, establishing electromagnetic oscillation in the five gaps. The klystron can be frequency-locked and phase-locked through the radio frequency input signal, thereby achieving the purpose of frequency-locking and phase-locking of the entire array device.

[0035] The three intermediate cavity sections are similar in structure to the input cavity section, except that they do not include the input structure (standard waveguide and coupling aperture).

[0036] In this embodiment of the invention, the excellent frequency-locking and phase-locking characteristics of the extended interaction klystron are utilized to achieve frequency-locking and phase-locking of the entire arrayed circuit. When several individual extended interaction oscillators are tightly coupled, the arrayed oscillator has the same resonant frequency, field distribution, and electron beam loading characteristics as the individual extended interaction oscillators, achieving a significant increase in power.

[0037] When the RF signal input power of the extended interaction klystron is 1-10W, the device injection voltage is 40-50kV, the injection current is 5-6A, and it operates under a permanent magnet focusing magnetic field, with a total injection power of 200-300kW, the average output power of the extended interaction klystron reaches 100kW, and the electronic efficiency reaches 40%. Traditional oscillator frequency locking and phase locking requires the injection of a power source with 10% of the output power to achieve frequency locking and phase locking between oscillators. This device requires a 10kW power source to achieve frequency locking and phase locking between oscillators, which is difficult and impractical. The arrayed oscillator based on the klystron for high-gain frequency locking and phase locking, as described in this invention, can achieve frequency locking and phase locking of the entire arrayed circuit through a 1-10W RF input signal input to the input cavity of the extended interaction klystron, greatly reducing the requirement for an external power source and lowering the implementation difficulty.

[0038] In this embodiment of the invention, the klystron's frequency-locked and phase-locked characteristics are used to control the interconnected oscillators, achieving frequency-locked and phase-locked operation between the klystron and the oscillators. When the lateral length of the coupling bridge increases to an integer multiple of the half-waveguide wavelength, tight coupling is achieved between the various extended interactive cavities, resulting in a significant increase in output power. Even when the lateral length of the coupling bridge is further increased to an integer multiple of the half-waveguide wavelength, tight coupling between the cavities can still be achieved.

[0039] In this embodiment of the invention, a single extended interaction klystron and extended interaction oscillator can achieve an output power of 100kW, and cascading multiple such circuit units can achieve MW-level power. This arrayed device, employing a multi-beam scheme, can boost power to the GW level.

[0040] Example 2:

[0041] As shown in Figure 3, this embodiment consists of five extended interaction oscillators and one extended interaction klystron. The oscillator and waveguide structures are the same as those in Embodiment 1. The difference is that the output section of the extended interaction klystron and the extended interaction oscillator are arranged in a ring. The coupling bridge is shown in Figure 3(a), which is a rectangular cavity structure; or as shown in Figure 3(b), which is a circular arc cylindrical cavity structure.

[0042] Example 3:

[0043] In this embodiment, a five-beam extended interaction oscillator and an extended interaction klystron are taken as examples, such as... Figure 6As shown, the coupling cavities of adjacent components are connected by coupling bridges to achieve array-based interconnection of each component.

[0044] Compared to other frequency-locked phase-locked structures, this invention is characterized by its applicability to arraying and frequency-locking between single-beam, dual-beam, and multi-beam devices, while also supporting single-output, dual-output, and multi-output structures. Frequency-locking and phase-locking of the entire arraying circuit are achieved through an external input RF signal via a klystron. Arraying on top of already increased output power results in a significant boost in power and gain, reaching MW or GW-level power capabilities. By adjusting the length of the coupling bridge, each component can employ an independent permanent magnet focusing system, resulting in a compact, arrayable, high-output-power, and high-efficiency system. These characteristics make this klystron-based high-gain frequency-locked phase-locked arrayed oscillator highly promising and valuable for development.

Claims

1. An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop, characterized in that, Includes at least two extended interaction oscillators and one extended interaction klystron; The extended interaction klystron includes an input cavity section, at least one intermediate cavity section, and an output cavity section connected in sequence; wherein, the input cavity section is used to input radio frequency signals, and the output cavity section is connected to the extended interaction oscillator; Both the extended interaction oscillator and the output cavity section employ a multi-output structure to achieve distributed energy extraction. Each of the extended interaction oscillator and the output cavity section includes a gap, an electron beam channel, a coupling cavity, and an output waveguide as the output structure, with the electron beam channel passing through the gap. The extended interaction oscillator and the output cavity section are arranged in a linear array or a ring with equal spacing. The gaps or coupling cavities of at least two adjacent extended interaction oscillators are connected by a coupling bridge, and the gaps or coupling cavities of adjacent extended interaction oscillators and the output cavity section are also connected by a coupling bridge, realizing the array interconnection of each component.

2. The arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop as described in claim 1, characterized in that, When the extended interaction oscillator and the output cavity section are arranged in a linear array, the output cavity section is located in the middle of the array.

3. An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop as described in claim 2, characterized in that, When the extended interaction oscillator and the output cavity are arranged in a linear array, the coupling bridge is a rectangular cavity structure with adjustable length; when the extended interaction oscillator and the klystron output cavity are arranged in a ring, the coupling bridge is a rectangular cavity structure or a circular arc cylindrical cavity structure with adjustable length.

4. An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop as described in claim 3, characterized in that, The lateral length of the rectangular cavity structure or the circular arc cylindrical cavity structure is an integer multiple of the half-waveguide wavelength.

5. An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop as described in claim 4, characterized in that, The height and thickness of the connection between the coupling bridge and the gap are less than or equal to the size of the gap.

6. An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop as described in claim 5, characterized in that, The extended interaction oscillator and the extended interaction klystron are single-injection or multi-injection structures.

7. An arrayed oscillator based on a klystron to achieve high-gain frequency-locked phase-locked loop as described in claim 6, characterized in that, Both the extended interaction klystron and the extended interaction oscillator operate in π-mode or 2π-mode, with the distance P between the gaps determined by the synchronization conditions. The relationship between the distance P between the gaps and the working mode is as follows: In the formula, f is the operating frequency, and v e Let N be the DC velocity of the electron, and N be a constant.

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