Thin film transistor, thin film transistor substrate, and display device
By introducing a gap space design into the thin-film transistor, the difference in electric field effect is enhanced, which solves the problem of insufficient grayscale performance of thin-film transistors in driving thin-film transistors, achieves a large s-factor and excellent current characteristics, and improves the grayscale performance of display devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- LG DISPLAY CO LTD
- Filing Date
- 2022-10-31
- Publication Date
- 2026-07-03
AI Technical Summary
When existing thin-film transistors are used to drive thin-film transistors in display devices, they are difficult to simultaneously possess a large s-factor and excellent on-state current characteristics, resulting in insufficient grayscale performance.
Design a thin-film transistor structure including a first active layer, a first gate electrode and two auxiliary gate electrodes. By setting a gap space in the channel portion to increase the difference in electric field effect, improve the s-factor, and provide excellent current characteristics in the on state.
This achievement realizes a large s-factor and excellent current characteristics of thin-film transistors in the on-state, thereby improving the grayscale performance of display devices.
Smart Images
Figure CN116153937B_ABST