A structure and manufacturing method of an all-silicon resonant ring gyroscope

Abstract

This invention belongs to the field of microelectromechanical technology and discloses an all-silicon resonant ring gyroscope structure and its manufacturing method. The silicon structure layer consists of multiple concentric rings of different radii that are interconnected. The rings are connected by spokes, which are symmetrically distributed circumferentially and supported by a central anchor point. Additional structures are formed between the rings and anchored to the underlying silicon via layer structure. The outermost ring consists of arc-shaped discrete electrodes. The ring structure pattern is identical to the spacing between the additional structures and electrodes, ensuring uniform heat dissipation during dry etching and improving etching uniformity. The silicon structure layer, silicon via layer, and silicon capping layer are bonded separately to achieve device sealing. The silicon structure layer and silicon via layer are connected by silicon-silicon bonding. Silicon vias are etched on the silicon via layer, and electrodes are used to extract signals through the silicon vias on the silicon via layer. The silicon capping layer structure corresponds to the sealing ring and additional structures of the structure layer, and is electrically interconnected and grounded.

Description

Technical Field

[0001] This invention belongs to the field of microelectromechanical technology, and particularly relates to an all-silicon resonant ring gyroscope structure and its manufacturing method. Background Technology

[0002] Micro-Electro-Mechanical Systems (MEMS) gyroscopes offer advantages such as mass production and low cost, along with small device size and low power consumption, leading to significant success in the consumer market. However, the reduction in size results in decreased sensitivity and increased noise levels, making it difficult for non-modally matched MEMS gyroscopes to achieve the required accuracy for navigation-grade applications. Disk-resonant gyroscopes (DRGs), composed of multiple concentrically connected rings, increase the device's resonant quality. Their axisymmetric structure effectively reduces the impact of external shocks, vibrations, and accelerations. Furthermore, similar to hemispherical resonant gyroscopes, DRGs operate in a modally matched state. Low-vacuum sealing amplifies the mechanical gain, improving the system's signal-to-noise ratio and potentially achieving navigation-grade accuracy.

[0003] To achieve high sensitivity and low noise, resonant ring gyroscopes require vacuum packaging to achieve a high quality factor. Stanford University uses a self-developed wafer-level epitaxial sealing process (epi-seal), which can achieve a vacuum level in the range of ~0.25 Pa. However, this method uses surface silicon processing, which limits the device thickness due to the process, and the suspended device is susceptible to electrostatic friction, limiting its widespread adoption. Boeing and the National University of Defense Technology initially used chip-level vacuum packaging, but this method was costly and not conducive to mass production. Subsequently, they adopted a wafer-level sealing method with lateral electrode leads, which leads the electrodes to the edge of the device by routing them through the substrate or cover layer. This method results in an uneven bonding interface due to the lead layer within the sealing ring, requiring high bonding strength. The glass-silicon-glass three-layer structure uses an anodic bonding wafer-level sealing method, with the electrodes led out through glass vias (TGV). However, due to the thermal mismatch between the glass and silicon materials, the device performance is greatly affected by temperature. In addition, axisymmetric structures have extremely high requirements for the fabrication of structural patterns. Non-uniformity in photolithography and etching will lead to structural deviations and affect device performance. Summary of the Invention

[0004] The purpose of this invention is to address the problems in the background art by proposing an all-silicon resonant ring gyroscope structure and its manufacturing method. This solution features a simple and easy-to-implement bonding scheme and convenient signal extraction. The internal gap of the resonant ring is reduced by arranging additional structures to ensure that the gaps between the ring, the additional structures, and the electrodes are uniform, thus improving the uniformity of the structure etching. The additional structures are electrically interconnected and grounded through a silicon capping layer, effectively reducing parasitic crosstalk.

[0005] To achieve the above objectives, the present invention employs the following technical solution.

[0006] Technical Solution 1:

[0007] A full silicon resonant ring gyroscope structure includes: a silicon structural layer 1, a silicon cover layer 8, and a silicon through-hole layer 11; the silicon structural layer 1 is sealed to the silicon through-hole layer 11 and the silicon cover layer 8 by bonding respectively.

[0008] The silicon structure layer 1 is supported by a central anchor point 2 and consists of multiple concentric rings 4 of different radii that are connected to each other. The rings 4 are connected by spokes 3.

[0009] Between the rings is an additional structure 6, which is anchored vertically. The movable structure is surrounded by an arc-shaped discrete electrode 5. The movable structure includes a ring 4 and spokes 3. The movable structure is axially symmetrically distributed. The gap between the movable structure and the additional structure 6 and the gap between the movable structure and the arc-shaped discrete electrode 5 are the same.

[0010] The silicon structure layer 1 and the through-silicon via layer 11 are connected by silicon-silicon bonding. Capacitor gaps 13, movable structural support anchors 14, silicon structure layer additional structural anchors 15, and electrode hole bonding anchors are fabricated on the through-silicon via layer 11. A through-silicon via 18 is etched on the other side of the through-silicon via layer 11. The arc-shaped discrete electrode 5 is led out through the through-silicon via 18 on the through-silicon via layer 11.

[0011] The silicon cover layer 8 is provided with silicon cover layer additional structure anchor point 9 and silicon cover layer sealing ring anchor point 10; the silicon cover layer additional structure anchor point 9 corresponds to the position of the additional structure 6, and the silicon cover layer sealing ring anchor point 10 corresponds to the position of the sealing ring 7 of the silicon structure layer. They are sealed and electrically interconnected and grounded through bonding.

[0012] The features and further improvements of the second technical solution of the present invention are as follows:

[0013] (1) The silicon wafer used to manufacture the silicon cover layer 8 is low-resistivity silicon. The bonding method between the silicon cover layer 8 and the silicon structure layer 1 is direct silicon-silicon bonding, Au-Au hot-press bonding, Au-Si eutectic bonding or Cu-Cu hot-press bonding.

[0014] (2) The number of concentric rings is between 5 and 30. The width of the concentric rings may be the same or different. The spokes are evenly distributed in the circumferential direction. The spokes connecting the rings may be the same or different in length.

[0015] (3) The number of discrete arc-shaped electrodes is 8, 12, 16 or 24. The electrode functions include first mode excitation, first mode detection, second mode excitation, second mode detection and tuning function.

[0016] Technical Solution Two:

[0017] A method for manufacturing an all-silicon resonant ring gyroscope, the method being used to manufacture the structure as described in technical solution one, the method comprising:

[0018] S1, fabricating the through-silicon via layer;

[0019] S2, fabricating a silicon structure layer on the through-silicon via layer;

[0020] S3, fabricating the silicon cover layer;

[0021] S4, bonding the silicon cover layer to the silicon structure layer.

[0022] The features and further improvements of the second technical solution of the present invention are as follows:

[0023] (1) S1 is specifically:

[0024] S11, First oxide layer 12 is oxidized on the surface of the double-sided polished silicon wafer;

[0025] S12, dry etching is used to create a shallow trench 13, a movable structure support anchor point 14, a silicon structure layer additional structure anchor point 15, a silicon structure layer sealing ring anchor point 17, and an electrode hole 16 on one side of the silicon wafer obtained in S11.

[0026] S13, wet etching silicon on the other side of the silicon wafer obtained in S11 to create silicon through-hole 18;

[0027] S14, after wet removal of the first oxide layer 12, the entire silicon wafer is re-oxidized to create the through-hole insulating layer 19.

[0028] (2) S2 is specifically:

[0029] S21, silicon-silicon bonding is performed between the oxidized silicon via layer 11 and the top silicon layer of the SOI wafer 20;

[0030] S22, the support layer 29 to the buffer layer 21 of the SOI wafer is thinned by dry etching or chemical mechanical polishing, and the SOI buffer layer is wet etched to the top silicon layer.

[0031] S23, photolithography and dry etching are performed on the top silicon layer to fabricate the central anchor point 2, movable structure, arc-shaped discrete electrode 5, additional structure 6 and sealing ring 7, and the photoresist is removed.

[0032] (3) S3 is specifically:

[0033] S31, double-sided polished silicon wafer with second oxide layer 22;

[0034] S32, structural photolithography wet etching removes part of the surface oxide layer 22, dry etching of silicon cover layer additional structural anchor point 9 and silicon cover layer sealing ring anchor point 10, and removes photoresist.

[0035] S33, wet etching of the second oxide layer 22;

[0036] S34, sputter bonding metal 23 onto the etched surface;

[0037] S35, photolithography is performed on the etched surface to etch the bonding metal 23 in the non-anchor area and remove the photoresist; a thin film getter 24 is sputtered using a hard mask.

[0038] (4) S4 is specifically:

[0039] S41, the silicon cover layer 8 and the silicon structural layer 1 are vacuum-sealed and bonded together;

[0040] S42, aluminum 22 is deposited inside the through-silicon via 18 using a hard mask and then annealed to bring out the electrode signal inside the through-silicon via 18.

[0041] This invention provides an all-silicon resonant ring gyroscope structure and its manufacturing method. The structure facilitates signal extraction via silicon through-holes, has low requirements for sealing bonding, and offers a variety of bonding methods. The internal gap of the resonant ring is minimized by arranging additional structures to ensure uniformity between the ring, the additional structures, and the electrodes, thus improving the uniformity of the etching. Electrical interconnection and grounding shielding of the additional structures via a silicon capping layer reduces parasitic effects and provides electrostatic shielding. The all-silicon structure can withstand higher temperatures, exhibits low device stress, and demonstrates excellent temperature characteristics. Attached Figure Description

[0042] Figure 1 A top view of the silicon structure layer 1 of the all-silicon resonant ring gyroscope is shown;

[0043] Figure 2 The first mode 101 and the second mode 102 of the n=2 goblet shape of the all-silicon resonant ring gyroscope are shown;

[0044] Figure 3 A top view of the silicon capping layer 8 silicon structure is shown;

[0045] Figure 4 A side view of the all-silicon resonant ring gyroscope structure is shown;

[0046] Figure 5 The fabrication process of an all-silicon resonant ring gyroscope is shown;

[0047] Figure 5 (a) Oxidation of the first oxide layer 12 on a double-sided polished silicon wafer;

[0048] Figure 5 (b) Dry etching is used to create a shallow trench 13, a movable structure support anchor point 14, a silicon structure layer additional structure anchor point 15, a silicon structure layer sealing ring anchor point 17 and an electrode hole 16 on one side of the silicon wafer.

[0049] Figure 5(c) Wet etching silicon on the other side of the silicon wafer to create silicon through-hole 18;

[0050] Figure 5 (d) After removing the oxide layer, the entire silicon wafer is re-oxidized to create a through-hole insulating layer 19;

[0051] Figure 5 (e) Silicon-silicon bonding is performed between the oxidized silicon via layer and the top silicon layer of SOI wafer 20;

[0052] Figure 5 (f) Thinning the support layer 29 to the buffer layer 21 of the SOI wafer by dry etching or chemical mechanical polishing. Wet etching of the SOI buffer layer to the top silicon layer;

[0053] Figure 5 (g) Photolithography and dry etching are performed on the top silicon layer to fabricate the central anchor point 2, movable structure, arc-shaped discrete electrode 5, additional structure 6 and sealing ring 7, and the photoresist is removed.

[0054] Figure 5 (h) Double-sided polished silicon wafer oxidizes the second oxide layer 22 to form the silicon cover layer 8;

[0055] Figure 5 (i) The second oxide layer 22 on the surface is removed by wet etching of structural photolithography, the additional structural anchor point 9 and the sealing ring anchor point 10 of the silicon cover layer are dry etched, and the photoresist is removed.

[0056] Figure 5 (j) Wet etching of silicon capping layer 8 and second oxide layer 22;

[0057] Figure 5 (k) Sputter bonding metal 23 onto the structural surface of silicon capping layer 8;

[0058] Figure 5 (l) Photolithography is used to etch the bonding metal 23 in the non-anchor area, remove the photoresist, and sputter the thin film getter 24 using a hard mask;

[0059] Figure 5 (m) Silicon cover layer 8 is vacuum-sealed bonded to the top silicon layer;

[0060] Figure 5 (n) Aluminum 22 is deposited in the through silicon via 18 through a hard mask and then annealed to bring out the signal inside the via;

[0061] Figure 6 This demonstrates the direct vacuum-sealed bonding of the silicon capping layer 8 with bonding metal 23 and the top silicon layer without considering the getter. Detailed Implementation

[0062] The technical solution of the present invention will now be described in detail with reference to the accompanying drawings.

[0063] like Figure 1 As shown, the silicon structure layer 1 of the all-silicon resonant ring gyroscope is supported by a central anchor point 2 and consists of multiple concentric rings 4 of different radii that are interconnected. The rings 4 are connected by spokes 3. The movable structure includes the rings 4 and the spokes 3. The movable structure is surrounded by arc-shaped discrete electrodes 5. Additional structures 6 are connected between the rings, and the additional structures 6 are anchored vertically. The movable structure of the all-silicon resonant ring gyroscope is axially symmetrically distributed and operates in either an n=2 goblet-shaped mode or an n=3 mode.

[0064] Figure 2 The first mode 101 and the second mode 102 of the n=2 goblet-shaped all-silicon resonant ring gyroscope are shown. The gaps between the movable structure and the additional structure 6, and between the movable structure and the arc-shaped discrete electrode 5 are the same, ensuring uniform heat dissipation of the movable structure during dry etching and improving etching uniformity.

[0065] The silicon structural layer 1, the silicon through-hole layer 11, and the silicon cover layer 8 are bonded together to achieve device sealing. Figure 4 A side view of an all-silicon resonant ring gyroscope structure is shown.

[0066] The silicon structure layer 1 and the through-silicon via layer 11 are connected by silicon-silicon bonding. Capacitor gaps 13, movable structural support anchors 14, additional structural anchors 15 of the silicon structure layer, and electrode hole bonding anchors are fabricated on the through-silicon via layer 11. A through-silicon via 18 is etched on the other side of the through-silicon via layer 11. The arc-shaped discrete electrode 5 is led out through the through-silicon via 18 on the through-silicon via layer 11.

[0067] like Figure 3 As shown, the anchor point 9 of the additional structure of the silicon cover layer and the anchor point 10 of the silicon cover layer sealing ring correspond to the positions of the additional structure 6 and the sealing ring 7 of the silicon structural layer. They are sealed and electrically interconnected through bonding, and grounded, thus reducing parasitic effects and providing electrostatic shielding. The silicon wafer used to manufacture the silicon cover layer 8 is low-resistivity silicon, typically with a resistivity of 0.001 Ω·cm to 0.1 Ω·cm. The bonding method between the silicon cover layer 8 and the silicon structural layer 1 can be wafer-level bonding and sealing methods that enable electrical connections, such as direct silicon-silicon bonding, Au-Au thermocompression bonding, Au-Si eutectic bonding, and Cu-Cu thermocompression bonding. The all-silicon resonant ring gyroscope structure can withstand higher temperatures, has lower device stress, and better temperature characteristics.

[0068] The fabrication steps for an all-silicon resonant ring gyroscope structure are as follows:

[0069] A. Fabrication of the through-silicon via layer 11 as follows Figure 5 As shown in (a) to (c).

[0070] Figure 5 (a) Oxidation of the first oxide layer 12 on the surface of a double-sided polished silicon wafer.

[0071] Figure 5 (b) On the silicon wafer obtained in 5(a), a shallow trench 13, a movable structure support anchor 14, a silicon structure layer additional structure anchor 15, a silicon structure layer sealing ring anchor 17 and an electrode hole 16 are formed by dry etching on one side.

[0072] Figure 5 (c) Wet etching silicon on the other side of the silicon wafer obtained in 5(a) to create silicon through-hole 18.

[0073] Figure 5 (d) After the first oxide layer 12 is removed by wet process, the entire silicon wafer is re-oxidized to form the through-hole insulating layer 19.

[0074] B. Fabrication of silicon structure layer 1, such as Figure 5 (d)~(g)

[0075] Figure 5 (e) Silicon-silicon bonding is performed between the oxidized silicon via layer 11 and the top silicon layer of the SOI wafer 20.

[0076] Figure 5 (f) Thinning of the SOI wafer support layer 29 to buffer layer 21 by dry etching or chemical mechanical polishing. Wet etching of the SOI buffer layer to the top silicon layer.

[0077] Figure 5 (g) Photolithography and dry etching are performed on the top silicon layer to fabricate the central anchor point 2, movable structure, arc-shaped discrete electrode 5, additional structure 6 and sealing ring 7, and the photoresist is removed.

[0078] C. The fabrication of silicon cover layer 8 is shown in Figures (h) to (l).

[0079] Figure 5 (h) Oxidation of the second oxide layer 22 on double-sided polished silicon wafer.

[0080] Figure 5 (i) Part of the second oxide layer 22 on the surface is removed by wet etching of structural photolithography, and the additional structural anchor point 9 and the sealing ring anchor point 10 of the silicon cover layer are removed by dry etching. Photoresist is removed.

[0081] Figure 5 (j) Wet etching of silicon cover layer 8 and second oxide layer 22.

[0082] Figure 5 (k) Sputter bonding metal 23 onto the etched surface of silicon capping layer 8.

[0083] Figure 5 (l) Photolithography is performed on the etched surface of the silicon capping layer 8 to etch the bonding metal 23 in the non-anchor area and remove the photoresist. A thin film getter 24 is sputtered using a hard mask.

[0084] D. The silicon capping layer 8 is bonded to the silicon structural layer 1 as shown in Figures (m) to (n).

[0085] Figure 5 (m) The silicon cover layer 8 and the silicon structural layer 1 are vacuum-sealed and bonded.

[0086] Figure 5 (n) Aluminum 22 is deposited in the through-silicon via 18 through a hard mask and then annealed to bring out the electrode signal in the through-silicon via 18.

[0087] In addition to the above implementation examples, without considering the thin-film getter, the silicon capping layer 8 with bonding metal 23 and the silicon structural layer 1 can be directly vacuum-sealed and bonded, such as... Figure 6 As shown.

[0088] This invention provides an all-silicon resonant ring gyroscope whose silicon structure layer consists of multiple concentric rings of different radii that are interconnected. The rings are connected by spokes, which are symmetrically distributed circumferentially and supported by a central anchor point. Additional structures exist between the rings and are anchored to the underlying silicon via layer structure. It operates in an n=2 wine glass or n=3 mode. The outermost ring consists of arc-shaped discrete electrodes. The ring structure pattern is identical to the spacing between the additional structures and electrodes, ensuring uniform heat dissipation during dry etching and improving etching uniformity. The silicon structure layer, silicon via layer, and silicon capping layer are bonded separately to achieve device sealing. The silicon structure layer and silicon via layer are connected via silicon-to-silicon bonding. Silicon vias are etched on the silicon via layer, and electrodes are used to extract signals through these vias. The silicon capping layer structure corresponds to the sealing ring and additional structures of the structure layer, and is electrically interconnected and grounded.

[0089] The number of concentric rings typically ranges from 5 to 30, with the width of the rings being the same or different. The spacing between the concentric rings, i.e., the spokes, is evenly distributed along the circumference, and the lengths of the spokes connecting the rings can be the same or different. The number of outer electrodes can vary from 8 to 24, and their functions include first-mode excitation, first-mode detection, second-mode excitation, second-mode detection, and tuning. The cover layer silicon is low-resistivity silicon, typically with a resistivity of 0.001 Ω·cm to 0.1 Ω·cm. The bonding methods between the silicon cover layer and the structural layer can be wafer-level bonding and sealing methods that enable electrical connections, such as direct silicon-silicon bonding, Au-Au thermocompression bonding, Au-Si eutectic bonding, and Cu-Cu thermocompression bonding. The all-silicon structure can withstand higher temperatures, has lower device stress, and exhibits better temperature characteristics.

[0090] This invention provides an all-silicon resonant ring gyroscope structure and its manufacturing method. The structure facilitates signal extraction via silicon through-holes, has low requirements for sealing bonding, and offers a variety of bonding methods. The internal gap of the resonant ring is minimized by arranging additional structures to ensure uniformity between the ring, the additional structures, and the electrodes, thus improving the uniformity of the etching. Electrical interconnection and grounding shielding of the additional structures via a silicon capping layer reduces parasitic effects and provides electrostatic shielding. The all-silicon structure can withstand higher temperatures, exhibits low device stress, and demonstrates excellent temperature characteristics.

[0091] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims. Parts of the invention not described in detail are common knowledge to those skilled in the art.

Claims

1. A fully silicon resonant ring gyroscope structure, characterized in that, include: Silicon structural layer (1), silicon capping layer (8), silicon through-hole layer (11); The silicon structure layer (1) is sealed to the silicon through-hole layer (11) and the silicon cover layer (8) by bonding. The silicon structure layer (1) is supported by a central anchor point (2) and consists of multiple concentric rings (4) of different radii that are connected to each other. The rings (4) are connected by spokes (3). Between the rings is an additional structure (6), which is anchored at the top and bottom. The movable structure is surrounded by a circular arc-shaped discrete electrode (5). The movable structure includes a ring (4) and spokes (3). The movable structure is axially symmetrically distributed. The gap between the movable structure and the additional structure (6) and the gap between the ring (4) and the circular arc-shaped discrete electrode (5) in the movable structure are the same. The silicon structure layer (1) and the through-silicon via layer (11) are connected by silicon-silicon bonding. Capacitor gaps (13), movable structural support anchors (14), additional structural anchors (15) of the silicon structure layer, and electrode hole bonding anchors are fabricated on the through-silicon via layer (11). A through-silicon via (18) is etched on the other side of the through-silicon via layer (11). The arc-shaped discrete electrode (5) is used to extract signals through the through-silicon via (18) on the through-silicon via layer (11). The silicon cover layer (8) is provided with silicon cover layer additional structure anchor point (9) and silicon cover layer sealing ring anchor point (10); the silicon cover layer additional structure anchor point (9) corresponds to the position of the additional structure (6), and the silicon cover layer sealing ring anchor point (10) corresponds to the position of the sealing ring (7) of the silicon structure layer. They are sealed and electrically interconnected and grounded through bonding.

2. The all-silicon resonant ring gyroscope structure according to claim 1, characterized in that, The silicon wafer used to manufacture the silicon cover layer (8) is low-resistivity silicon. The bonding methods between the silicon cover layer (8) and the silicon structure layer (1) are direct silicon-silicon bonding, Au-Au hot-press bonding, Au-Si eutectic bonding, or Cu-Cu hot-press bonding.

3. The all-silicon resonant ring gyroscope structure according to claim 1, characterized in that, The number of concentric rings ranges from 5 to 30. The width of the concentric rings may be the same or different. The spokes are evenly distributed in the circumferential direction. The spokes connecting the rings may be the same or different in length.

4. The all-silicon resonant ring gyroscope structure according to claim 1, characterized in that, The number of discrete arc-shaped electrodes is 8, 12, 16 or 24. The electrode functions include first mode excitation, first mode detection, second mode excitation, second mode detection and tuning functions.

5. A method for manufacturing an all-silicon resonant ring gyroscope, characterized in that, The method is used to manufacture the structure as described in any one of claims 1-4, the method comprising: S1, fabricating the through-silicon via layer; S2, fabricating a silicon structure layer on the through-silicon via layer; S3, fabricating the silicon cover layer; S4, bonding the silicon cover layer to the silicon structure layer.

6. The manufacturing method of an all-silicon resonant ring gyroscope according to claim 5, characterized in that, S1 specifically refers to: S11, the first oxide layer (12) is oxidized on the surface of the double-sided polished silicon wafer; S12, dry etching is used to create shallow trenches (13), movable structure support anchors (14), silicon structure layer additional structure anchors (15), silicon structure layer sealing ring anchors (17) and electrode holes (16) on one side of the silicon wafer obtained in S11. S13, wet etching silicon on the other side of the silicon wafer obtained in S11 to create silicon through-holes (18); S14, after wet removal of the first oxide layer (12), the entire silicon wafer is re-oxidized to form a through-hole insulating layer (19).

7. The manufacturing method of an all-silicon resonant ring gyroscope according to claim 6, characterized in that, S2 specifically refers to: S21, the oxidized silicon via layer (11) and the top silicon of the SOI wafer (20) are bonded together with silicon; S22, the support layer (29) of the SOI wafer is thinned to the buffer layer (21) by dry etching or chemical mechanical polishing, and the SOI buffer layer is wet etched to the top silicon layer; S23, photolithography and dry etching are performed on the top silicon layer to fabricate the central anchor point (2), movable structure, arc-shaped discrete electrode (5), additional structure (6) and sealing ring (7), and the photoresist is removed.

8. The manufacturing method of an all-silicon resonant ring gyroscope according to claim 7, characterized in that, S3 specifically refers to: S31, double-sided polished silicon wafer with second oxide layer (22); S32, structural photolithography wet etching removes part of the second oxide layer on the surface (22), dry etching the additional structural anchor point (9) and the sealing ring anchor point (10) of the silicon cover layer, and removes the photoresist. S33, wet etching of the second oxide layer (22); S34, sputter bonding metal on the etched surface (23); S35, photolithography is performed on the etched surface to etch the bonding metal in the non-anchor area (23) and remove the photoresist; a thin film getter is sputtered using a hard mask (24).

9. A method for manufacturing an all-silicon resonant ring gyroscope according to claim 8, characterized in that, S4 specifically refers to: S41, the silicon cover layer (8) and the silicon structure layer (1) are vacuum-sealed and bonded; S42, aluminum (22) is deposited in the through silicon via (18) through a hard mask and then annealed to bring out the electrode signal inside the through silicon via (18).

Images